Edc Course File New 06.06.2019

Course File- Ac.
Year :
Course Plan 2019-2020
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Faculty Details
Name of the Faculty : Dr. B.S.SATHISH
Designation : Professor
Department : Electronics and Communication Engineering (ECE)
Course Details
Name of the Programme : B. Tech
Batch : 2018 – 2022
Programme : Electronics and Communication Engineering (ECE)
Semester : II / I
Section : B&C
Title of the Course : Electronic Devices and Circuits
Course Code : R1621041
Course Type : Core
Number of Students : 57 & 60
Note to the Faculty Members on how to use this course file format
1. Time Table and syllabus copy provided to you may also be filed in it.
2. Please attach the Marks List of the students in respect of MID-I & QUIZ-I and MID-II & QUIZ-II
for this course in your Course File
3. Photocopy of the best and the worst answer sheets for MID-I, & II, be included in the Course
File.
4. List of Assignments / Seminar Topics you have given to students should also be included in the
Course File.
5. Model Question Paper, which you have distributed to the students in the beginning of the
Semester for the subject should be included in the Course File.
6. Any additional resources like PPT, OHP, handouts used may also be filed in it.
Signature of the Head of the Department Signature of the Faculty

Date: Date:
Course File- Ac. Year :
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

STATUS PAPER
1. TARGET
1.1. Percentage of Pass : 85%
1.2. Percentage of I Class : 40%
2. COURSE PLAN
The coverage of Units by contact classes, lectures, design exercises, solving numerical problems,
assignments.
(Please write how you intend to cover the contents: i.e., coverage of Units by lectures, guest
lectures, design exercises, solving numerical problems, demonstration of models, model
preparation, or by assignments, etc.)
3. METHOD OF EVALUATION (strike out, not applicable)
3.1. Continuous Assessment Examinations (CAE 1, CAE 2)
3.2. Assignments / Seminars
3.3. Mini Projects
3.4. Quiz
3.5. Term End Examination
4. List out any new topic(s) or any innovation you would like to introduce in teaching the
subject in this Semester.
4.1. Carrier concentration in intrinsic semiconductor
4.2. Diode fabrication
4.3. Differential amplifiers designing with Transistors

Date: Date:
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

GUIDELINES TO STUDY THE SUBJECT
Name of the Faculty : Dr. B.S.SATHISH

Name of the Course : Electronic Devices and Circuits
Course Code : R1621041
Program : Electronics and Communication Engineering (ECE)
Guidelines to Study the Subject

Refresh II /I Course Electronic Devices and Circuits (EDC), need to practice and understand the
design and analysis of a circuit, Kindly attend bridge course on design and analysis of a circuit
(Assignment), Unit I is all about semiconductor physics, it is important to study for EDC. Unit II,
Junction diodes and Special diode characteristics, Unit III basics of rectifiers and filters Unit IV&V
Transistor and FET design and Biasing, Unit VI Small signal low frequency design and models are the
trump card to clear the course.

Date: Date:
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

COURSE OBJECTIVES
On completion of this course the student shall be able to:
S. No Objective Outcome
After going through this course the student

The student will be able to
will be able to
C211.1
The basic concepts of semiconductor
Understand the basic concepts of
physics are to be reviewed.
semiconductor physics..
Study the physical phenomena such as Understand the formation of p-n junction
C211.2 conduction, transport mechanism and and how it can be used as a p-n junction as
electrical characteristics of different diode in different
diodes. modes of operation.
Know the construction, working principle of

The application of diodes as rectifiers with
C211.3 rectifiers with and without filters with
their operation and characteristics with
relevant expressions and necessary
and without filters are discussed.
comparisons.
The principal of working and operation of Understand the construction, principle of

C211.4 Bipolar Junction Transistor and Field operation of transistors, BJT and FET with
Effect Transistor and their characteristics their V-I characteristics in different
are explained. configurations..
Know the need of transistor biasing,

The need of transistor biasing and its
C211.5 various biasing techniques for BJT and FET
significance is explained. The quiescent
and stabilization concepts with necessary
point or operating point is explained.
expressions..
Small signal equivalent circuit analysis of Perform the analysis of small signal low
C211.6
BJT and FET transistor amplifiers in frequency transistor amplifier circuits using
different configuration is explained. BJT and FET in different configurations.
Signature of the Faculty

Date:
Note:
1. For each unit we must create one course objective, hence we may have four to six objectives.
2. During designing the internal/mid question paper, questions must be reflected with respect to
the objective, which was designed for that chapter or unit.
3. For each of the OBJECTIVE indicate the appropriate OUTCOMES to be achieved.
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

COURSE OUTCOMES
The expected outcomes of the Course are:
S.No General Categories of Outcomes Specific Outcomes of the Course
The ability to apply the concepts of
Engineering knowledge: Apply the knowledge of
engineering, i.e., design op-amp
mathematics, science, engineering fundamentals, and
PO1 applications in the systematic form
an engineering specialization for the solution of
to meet the requirements of the
complex engineering problems.
user
Problem analysis: Identify, formulate, research
literature, and analyse complex engineering problems
PO2 reaching substantiated conclusions using first
principles of mathematics, natural sciences, and
engineering sciences.
Design/development of solutions: Design solutions for
complex engineering problems and design system
components or processes that meet the specified
PO3
needs with appropriate consideration for public health
and safety, and cultural, societal, and environmental
considerations.
Conduct investigations of complex problems: Use
research-based knowledge and research methods
PO4 including design of experiments, analysis and
interpretation of data and synthesis of t he
information to provide valid conclusions.
Modern tool usage: Create, select, and apply
appropriate techniques, resources, and modern Using the Multisim software to
PO5 engineering and IT tools, including prediction and implement the circuit and verify the
modelling to complex engineering activities, with an results
understanding of the limitations.
The engineer and society: Apply reasoning informed
by the contextual knowledge to assess societal,
PO6 health, safety, legal and cultural issues and the
consequent responsibilities relevant to the
professional engineering practice.
Environment and sustainability: Understand the
impact of the professional engineering solutions in
PO7 societal and environmental contexts, and demonstrate
the knowledge of, and need for sustainable
development.
Ethics: Apply ethical principles and commit to
PO8 professional ethics and responsibilities and norms of
the engineering practice.
Individual and team work: Function effectively as an
PO9 individual, and as a member or leader in diverse
teams, and in multidisciplinary settings.
Communication: Communicate effectively on complex Using this knowledge to improve
engineering activities with the engineering how to use this developing
community and with t h e society at large, such as, technology
PO10
being able to comprehend and write effective reports
and design documentation, make effective
presentations, and give and receive clear instructions.
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Project management and finance: Demonstrate
knowledge and understanding of the engineering and
PO11 management principles and apply these to one’s own
work, as a member and leader in a team, to manage
projects and in multidisciplinary environments.
Life-long learning: Recognize the need for, and have
the preparation and ability to engage in independent
PO12
and life-long learning in the broadest context of
technological change.
An ability to understand the concept of basic ECE and
PSO1
to apply there to various areas like signal processing,
VLSI, ES, CS, Digital and Analog Devices etc.
An ability to solve complex ECE problems using latest
PSO2 hardware and software tools along with analytical
skills to arrive cost effective and appropriate solutions
Wisdom of social and environment awareness along
with ethical responsibility to have a successful career
PSO3 and to sustain passion and zeal for real world
application using optimal resources as an
entrepreneur
1. Objectives – Outcome Relationship Matrix (Indicate the relationships by  mark).
Outcomes
PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12
Objectives
C211.1 2 3 2 3 3 1 2 1 - 2 1 2
C211.2 2 3 2 3 3 1 2 1 - 2 1 2
C211.3 2 3 2 3 3 1 2 1 - 2 1 2
C211.4 3 3 2 3 3 1 2 1 - 2 1 2
C211.5 2 3 2 3 3 1 2 1 - 2 1 2
C211.6 3 3 2 3 3 1 2 1 - 2 1 2
Avg. 2.33 3 2 3 3 1 2 1 - 2 1 2
CO – PSO matrix
PSO1 PSO2 PSO3
C211.1 2 3 2
C211.2 2 3 2
C211.3 2 3 2
C211.4 2 3 2
C211.5 2 3 2
C211.6 2 3 2
Avg. 2 3 2
Faculty Academic Coordinator HOD Dean Academics

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

COURSE SCHEDULE – AT A GLANCE
The Schedule for the whole Course / Subject is:
Duration (Date) Total
No.
Unit Description
From To of
Periods
UNIT-I Semi Conductor Physics : Insulators, Semi conductors,
and Metals classification using energy band diagrams, mobility
and conductivity, electrons and holes in intrinsic semi conductors,
1 extrinsic semi conductors, drift and diffusion, charge densities in 10.06.2019 22.06.2019 12
semiconductors, Hall effect, continuity equation, law of junction,
Fermi Dirac function, Fermi level in intrinsic and extrinsic
Semiconductors
UNIT- II Junction Diode Characteristics : Open circuited p-n
junction, Biased p-n junction, p-n junction diode, current
components in PN junction Diode, diode equation, V-I
Characteristics, temperature dependence on V-I characteristics,
Diode resistance, Diode capacitance, energy band diagram of PN
2 24.06.2019 09.07.2019 14
junction Diode.
Special Semiconductor Diodes: Zener Diode, Breakdown
mechanisms, Zener diode applications, LED, Photo diode, Tunnel
Diode, SCR, UJT. Construction, operation and characteristics of all
the diodes are required to be considered.
UNIT- III Rectifiers and Filters: Basic Rectifier setup, half

wave rectifier, full wave rectifier, bridge rectifier, derivations of
3 characteristics of rectifiers, rectifier circuits-operation, input and 10.07.2019 22.07.2019 10
output waveforms, Filters, Inductor filter, Capacitor filter,
comparison of various filter circuits in terms of ripple factors.
UNIT- IV Transistor Characteristics: BJT: Junction transistor,

transistor current components, transistor equation, transistor
configurations, transistor as an amplifier, and characteristics of 03.08.2019
transistor in Common Base, Common Emitter and Common MID – I
4 Collector configurations, Ebers-Moll model of a transistor, punch 23.07.2019 14
STARTS
through/ reach through, Photo transistor, typical transistor
junction voltage values. FET: FET types, construction, operation, 17.08.2019
characteristics, parameters, MOSFET-types, construction,
operation, characteristics, comparison between JFET and MOSFET.
UNIT- V Transistor Biasing and Thermal Stabilization : Need

for biasing, operating point, load line analysis, BJT biasing-
methods, basic stability, fixed bias, collector to base bias, self
5 19.08.2019 03.09.2019 12
bias, Stabilization against variations in VBE, Ic, and β, Stability
factors, (S, S', S'’), Bias compensation, Thermal runaway,
Thermal stability. FET Biasing- methods and stabilization.
UNIT- VI: Small Signal Low Frequency Transistor Amplifier

Models: BJT: Two port network, Transistor hybrid model,
determination of h-parameters, conversion of h-parameters,
generalized analysis of transistor amplifier model using h- 13
6 04.09.2019 20.09.2019
parameters, Analysis of CB, CE and CC amplifiers using exact and
approximate analysis, Comparison of transistor amplifiers. FET:
Generalized analysis of small signal model, Analysis of CG, CS and
CD amplifiers, comparison of FET amplifiers.
Total No. of Instructional periods available for the course: 88 Hours/Periods

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

LESSON PLAN (2019-20)

COURSE: ELECTRONICS DEVICE AND CIRCUITS (II/i) JNTUK-R16
FACULTY: Dr. B.S.SATHISH Format: 9001/0
Mode of
Unit/ Plan Actual Remarks
Teaching
Expt. Topic/Activities Planned
No. of No. of
No. Date
hours hours
UNIT I: Semiconductor Physics
Basics of Conductors, Insulators, Semi
1. 1
conductors
Metals classification using energy band
2. 2
diagrams
3. Mobility and conductivity 1
Electrons and holes in intrinsic semi
4. 1
conductors
5. Extrinsic semi conductors 1
Drift and Diffusion, charge densities in
6. 1
semiconductors
7. Hall effect 1
8. Continuity equation 1
9. Law of junction, Fermi Dirac function 2
Fermi level in intrinsic and extrinsic
10. 1
Semiconductors
UNIT II: Junction diode characteristics and Special diodes:
Open circuited p-n junction, Biased p-n
11. 2
junction
P-N junction diode, current components
12. 1
in PN junction Diode
13. Diode equation, V-I Characteristics 1
Temperature dependence on V-I
14. 1
characteristics
15. Diode resistance, Diode capacitance 1
Energy band diagram of PN junction
16. 1
Diode
17. Zener Diode, Breakdown mechanisms 2
18. Zener diode applications, LED 1
19. Photo diode, Tunnel Diode 1
20. SCR construction and operation 1
21. Tunnel diode Construction, operation 1
22. Characteristics of all the diodes 1
UNIT III: Rectifiers and filters:
23. Basic Rectifiers 1
24. Half wave rectifier and waveforms 1
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Determination of half wave rectifier
25. 1
parameters
26. Full wave rectifier and waveforms 1
Determination of full wave rectifier
27. 1
parameters
28. Bridge wave rectifier and waveforms 1
Determination of Bridge wave rectifier
29. 1
parameters
30. Comparison of rectifiers 1
Filters, Inductor filter and derive the
31. 1
ripple factor
Capacitor filter and derive the ripple
32. 1
factor
UNIT IV: Transistor and FET characteristics
Junction transistor, transistor current
33. 2
components
transistor equation, transistor
34. 2
configurations
35. Transistor as an amplifier 1
Characteristics of transistor in Common
36. 2
Base, Common Emitter
37. Common Collector configurations 1
38. Ebers-Moll model of a transistor ADC 1
Punch through/ reach through, Photo
39. 1
transistor
Typical transistor junction voltage
40. 1
values.
FET types, construction, operation,
41. 1
characteristics
MOSFET-types, construction, operation,
42. Characteristics, comparison between 2
JFET and MOSFET.
UNIT V: Transistor Biasing and Thermal Stabilization:
43. Need for biasing, operating point, 1
44. Load line analysis, BJT biasing- methods 2
45. Basic stability, fixed bias 1
46. Collector to base bias, self bias 2
Stabilization against variations in VBE,
47. 2
IC and β, Stability factors
48. Bias compensation, Thermal runaway 2
Thermal stability. FET Biasing- methods
49. 2
and stabilization
UNIT VI : Small Signal Low Frequency Transistor Amplifier Models
Two port network, Transistor hybrid
50. 2
model
51. Determination of h-parameters, 2
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Conversion of h-parameters,
52. generalized analysis of transistor 2
amplifier model using h-parameters,
Analysis of CB, CE and CC amplifiers
53. 1
using exact analysis
Analysis of CB, CE and CC amplifiers
54. 1
using approximate analysis
55. Comparison of transistor amplifiers. 1
Generalized analysis of small signal
56. 1
model
57. Analysis of CG, CS and CD amplifiers 2
58. Comparison of FET amplifiers. 1
1. TEXT BOOKS:
1. Electronic Devices and Circuits- J. Millman, C. Halkias, Tata Mc-Graw Hill, Second Edition.
2. Integrated Electronics- Jacob Millman, C. Halkies, C.D.Parikh, Tata Mc-Graw Hill, 2009.
2. REFERENCES:
1. Electronic Devices and Circuits-K. Satya Prasad, VGS Book Links.
2. Electronic Devices and Circuits-Salivahanan, Kumar, Vallavaraj, Tata Mc-Graw Hill,
Second Edition
3. Electronic Devices and Circuits – Bell, Oxford

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

COURSE COMPLETION STATUS
Actual date of completion & Remarks, if any
Nos. of
Actual Signature
Course
Unit Description Date of of HOD
Objectives
Completion with Date
Achieved
UNIT-I:Semi Conductor Physics : Insulators, Semi
conductors, and Metals classification using energy band
diagrams, mobility and conductivity, electrons and
holes in intrinsic semi conductors, extrinsic semi
1
conductors, drift and diffusion, charge densities in
semiconductors, Hall effect, continuity equation, law of
junction, Fermi Dirac function, Fermi level in intrinsic
and extrinsic Semiconductors
UNIT- II Junction Diode Characteristics : Open
circuited p-n junction, Biased p-n junction, p-n junction
diode, current components in PN junction Diode, diode
equation, V-I Characteristics, temperature dependence
on V-I Characteristics, Diode resistance, Diode
capacitance, energy band diagram of PN junction
2
Diode.
Special Semiconductor Diodes: Zener Diode,
Breakdown mechanisms, Zener diode applications, LED,
Photo diode, Tunnel Diode, SCR, UJT. Construction,
operation and characteristics of all the diodes are
required to be considered.
UNIT- III Rectifiers and Filters: Basic Rectifier
setup, half wave rectifier, full wave rectifier, bridge
rectifier, derivations of characteristics of rectifiers,
3
rectifier circuits-operation, input and output waveforms,
Filters, Inductor filter, Capacitor filter, comparison of
various filter circuits in terms of ripple factors
UNIT- IV Transistor characteristics: Junction
transistor, transistor current components, transistor
equation, transistor configurations, transistor as an
amplifier, characteristics of transistor in Common Base,
Common Emitter and Common Collector configurations,
4 Ebers-Moll model of a transistor, punch through/ reach
through, Photo transistor, typical transistor junction
voltage values.
FET:FET types, construction, operation, characteristics,
parameters, MOSFET-types, construction, operation,
Characteristics, comparison between JFET and MOSFET.
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

UNIT- V:Transistor Biasing and Thermal
Stabilization : Need for biasing, operating point, load
line analysis, BJT biasing- methods, basic stability,
fixed bias, collector to base bias, self bias, Stabilization
5
against variations in VBE, Ic, and β, Stability factors,
(S, S', S'’), Bias compensation, Thermal runaway,
Thermal stability.
FET Biasing- methods and stabilization.
UNIT- VI Small Signal Low Frequency Transistor
Amplifier Models:
BJT: Two port network, Transistor hybrid model,
determination of h-parameters, conversion of h-
parameters, generalized analysis of transistor amplifier
6 model using h-parameters, Analysis of CB, CE and CC
amplifiers using exact and approximate analysis,
Comparison of transistor amplifiers.
FET: Generalized analysis of small signal model,
Analysis of CG, CS and CD amplifiers, comparison of
FET amplifiers.
Note: After completion of each unit mention the number of objectives achieved

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

TUTORIAL SHEET – I
Tutorial sheet corresponds to Unit Nos.: I & II Date : Time:
1. Calculate the resistivity of silicon, if donor type of impurity is added to the extent of 1 atom per 108
Silicon atom, at 300 0K and assume µn = 1300 cm3 /V-s.
2. * Calculate the resistivity of intrinsic germanium at 300 0K. Assume ni = 2.5×1013 per cm3, µn =
3800 cm2 /V-s and µp = 1800 cm2 /V-s.
3. Find the concentration of holes and electrons in n-type silicon at 300 o K, if the conductivity is 300
S/cm. Also find these values for p-type silicon. Given that for silicon at 300 o K, ni = 1.5 × 1010/cm3
, µn = 1300 cm2 /V-s and µp = 500 cm2 /V-s.
4. A block of silicon is doped with a donor atom density of 𝑁𝐷 = 3 × 1014 atoms/cm3 and with an
acceptor atom density of 𝑁𝐴 = 0.5 × 1014 atoms/cm 3. Determine the resultant densities of free
electrons and holes. Given intrinsic carrier concentration of silicon is 1.5 × 1010 per cm3.
5. A bar of intrinsic Ge 6 cm long is subjected to a potential difference of 12 V. If the velocity of

electrons in the bar is 73 𝑚⁄𝑠 , determine the mobility of electrons.
6. Find the concentration of holes and electrons in a p- type semiconductor at 300°𝐾 assuming
resistivity as 0.02 𝑜ℎ𝑚 − 𝑐𝑚. Assume 𝜇𝑝 = 475 𝑚2 /𝑉𝑠, 𝑛𝑖 = 1.45 × 1010 per cm3
7. Find the diffusion coefficients of holes and electrons for germanium at 300°𝐾. The carrier
mobilities in cm2/V-s at 300°𝐾 for holes and electronics respectively 3,600 𝑎𝑛𝑑 1,700. Density of
carrier is 2.5 × 1013 /𝑐𝑚2 . Boltzmann constant 𝑘 = 1.38 × 10−23 𝐽/°𝐾, 𝑒 = 1.602 × 10−19 𝐶.
8. The resistivity of doped silicon material is 9 × 10−3 𝛺 − 𝑚. The Hall coefficient is 3.6 × 10−4 𝑚3 /𝐶
assuming single carrier conduction; find the mobility and density of charge carriers. 𝑒 = 1.602 ×
10−19 𝐶
9. The mobility of free electrons and holes in pure silicon are 0.13 and 0.05 m2 /V-s and the
corresponding values for pure germanium are 0.38 and 0.18 m2 /V-s respectively. Determine the
values intrinsic conductivity for both silicon and germanium. Given that ni = 2.5×1019/m3 for
germanium and ni = 2.5×1019/m3 for silicon at room temperature.
10. In an N-type semiconductor, the Fermi-level lies 0.3 𝑒𝑉 below the conduction band at 27°𝐶, if the
temperature is increased to 55°𝐶, find the new position of the Fermi- level.
11. The resistivity of pure silicon is 2.3×106 Ω-cm at 27 0C. Calculate intrinsic concentration at 127 0C.
12. A P-N junction silicon diode has a reverse saturation current of 50 nA at room temperature 27 oK. If
the new reverse saturation current is observed to be 160 nA, calculate the value of new temperature.
13. Calculate the stability factor for a self bias circuit with the given data. 𝑅𝐶 = 1 𝑘 𝛺,
𝑅𝐸 = 100 𝛺, 𝛽 = 99, 𝑉 𝐶𝐸 = 6 𝑉, 𝑎𝑛𝑑 𝑉𝐶𝐶 = 10 𝑉. (Assume data if necessary)
Please write the Questions / Problems / Exercises which you would like to give to the students and
also mention the objectives to which these questions / Problems are related.

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

TUTORIAL SHEET – II
Tutorial sheet corresponds to Unit Nos. : III & IV Date : Time:
1. In half-wave rectifier an ac voltage of peak value 24 V is connected in series with silicon diode and
load resistance of 480 Ω. If the forward resistance of the diode is 20 Ω, find average load current and
rms value of load current.
2. A 230 V, 50 Hz voltage is applied to the primary of 5:1 step down center - tap transformer used in a
full-wave rectifier having a load of 900 Ω. If the diode resistance and secondary coil resistance
together has a resistance 100 Ω, determine (i) DC voltage across the load (ii) DC current flowing
through load (iii) DC power delivered to the load (iv) PIV across diode (v) ripple voltage and its
frequency.
3. Design a full-wave rectifier with LC filter to provide an output voltage of 10 V and a load current of
200 mA and ripple in limited to 2 %.
4. In a FWR using an LC filter L = 10 H, C = 100 µF and RL = 500 Ω. Calculate Idc, Vdc, Ripple factor
for an input of Vi = 30 sin (100πt)V.
5. The voltage across silicon diode is 0.7 𝑉 when 3 𝑚𝐴 current flows through it. If the voltage
increases to 0.75 𝑉 then find the current in silicon diode.
6. Calculate the reverse saturation current for a silicon P-N junction diode which passes a current of
15 𝑚𝐴 at 27°𝐶 when the forward bias voltage is 680 𝑚𝑉.
7. A silicon PN junction has reverse saturation current of 30 𝑛𝐴 at a temperature of 300 𝐾.

Calculate the junction current when the applied voltage is i) 0.7 𝑉 forward bias ii) 10 𝑉 reverse
bias.
8. The current flowing in a germanium PN junction diode at room temperature is 9 × 10−7 𝐴 when the
large reverse voltage is applied. Calculate the current flowing when 0.1 𝑉 forward bias is applied.
9. A silicon diode has reverse saturation current of 2.5 𝜇𝐴 at 300°𝐾. Find forward voltage
for a forward current of 10 𝑚𝐴.
10. For a self bias amplifier circuit with Vcc = 15 V, R1 = 103 kΩ, R2 = 121 kΩ, Rc = 2 kΩ and RE = 1
kΩ.
Determine: i) IB ii) Ic iii) Stability factor S for β=120 (Assume VBE=0.7 V)
11. In a silicon transistor with a fixed bias, Vcc= 9 V, Rc= 3 kΩ, R B= 8 kΩ, β = 50, VBE= 0.7 V.
Find the operating point and stability factor.
12. Calculate the quiescent current and voltage of collector to base bias arrangement using the
Following data: VCC= 10 V, RB= 100 kΩ, RE = 2 kΩ, β = 50 and also specify a value of RB so that
VCE = 7 V.
13. Calculate the collector current and emitter current for a transistor with αdc = 0.99 and ICBO = 50 µA
when the base current is 20 µA.

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

TUTORIAL SHEET – III
Tutorial sheet corresponds to Unit Nos. : V & VI Date : Time:
1. A transistor amplifier Vcc = 12 V, R1 = 8 k, R2 = 4 k , Re = 1 k and Rl = 1.5 k . Assume Vbe = 0.7 V.
Determine the operating point and draw the DC and AC load line.
2. A silicon transistor with β = 80 is used in self-biasing arrangement with VCC = 15 V, RC = 4.7 kΩ. The
operating point Q is at VCE = 8.2 V, IC = 1.2 mA. Find the values of R1, R2 and RE.
3. An npn transistor of β = 50 is used in CE circuit with Vcc = 10 V, RC = 2 kΩ. The bias is obtained by
connecting 100 kΩ resistor from collector to base. Find the quiescent point and stability factor.
4. If the various parameters of a CE Amplifier which uses the self bias method are V CC=12V,
R1=5kΩ, R2 =10kΩ, RC =3kΩ, Re=1kΩ and β=50, find i) the coordinates of the operating point
and ii) the Stability Factor, assuming the transistor to be of silicon.
5. In a Silicon transistor circuit with a fixed bias, VCC=10 V, RC=4 kΩ, RB=7 kΩ, β=100, VBE=0.7 V.
Find the operating point and Stability factor.
6. In a Self bias circuit containing R 1=50 kΩ, R2=25 kΩ, Re=1 kΩ, RC=3 kΩ, β=90, VCC=12 V,
VBE=0.7 V. Find the operating point, S, S’ and S".
7. Consider a single stage CE amplifier with R s=l kΩ, R 1 = 50 kΩ, R 2 = 2 kΩ, R c = 1kΩ, R L = 1.2
kΩ, hfe = 50, hie = 1.1 kΩ, hoe= 25 μA/V and hre = 2.5X10-4. Find Ai, Ri, Av and Ro.
8. A FET amplifier in the common source configuration uses a load resistance of 250 kΩ
and the transconductance is 0.5 mA/V. What is the voltage gain of the amplifier? Given rd=200
kΩ.
9. A transistor used in CE amplifier connection has the following set of h parameters, hi e=1kΩ,
hfe=100, h re=5x10-4, h oe= 2x10-5Q4, Rs=15 kΩ, R L=5 kΩ. Determine input impedance, output
impedance, current gain and voltage gain.
10. In voltage divider bias circuit, if VCC = 10 V, VCE = 5 V, IC = 1.2 mA, R2 = 10 kΩ, β = 100 and
RE = 270 Ω, calculate R1 and R3. Assume VBE (sat) = 0.6 V.
11. Given IE= 2.5 mA, hfe= 140, hoe= 20 μS and hOb= 0.5 μS. Determine the common-emitter hybrid
equivalent circuit.
12. In the CE amplifier calculate the mid frequency voltage gain and lower 3-dB point. The transistor has h-
parameters, hfe = 400 and hie = 10 kΩ, the circuit details are Rs = 600 Ω, RL = 5 kΩ, Re = 1 kΩ, Vcc =
12 V, R1 = 15 kΩ , R2 = 2.2kΩ and Ce = 50µF.
13. For a common source amplifier as shown in below figure, operating point is defined by VGSQ = −2.5
V, VP = −6 V & IDQ = 2.5 mA with IDSS = 8mA. Calculate gm, rd, Zi, Zo & Voltage gain, Av.
14. The h-parameters of a transistor used in a CE circuit are hie=1kΩ, hre=0.001, hfe=50, hoe=100 k.
The load resistance for the transistor is 1KΩ in the collector circuit. Determine Ri, Ro, Av, Ai in the
amplifier stage (Assume Rs= 1KΩ).

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

ASSIGNMENT-1
Q1: a) Define Hall effect and Derive Hall coefficient expression along with applications of Hall effect.
b) Explain about Fermi level in intrinsic and extrinsic semiconductors.
Q2: a) Explain forward and reverse bias in case of PN Junction.

b) Derive diode current equation, in terms of applied voltage.
Q3: a) Derive the expression for ripple factor of full-wave rectifier with L-section filter. Explain the
necessity of a bleeder resistor.
b) Draw the circuit diagram of FWR and explain the operation with the help of
waveforms.
ASSIGNMENT-2
Q1: a) Explain the construction and working of Enhancement MOSFET.

b) Draw the Eber-moll model of a transistor.
Q2 a) What is thermal runaway? Derive relevant expressions to obtain thermal stability
b) In a silicon transistor with a fixed bias, Vcc= 9 V, Rc= 3 kΩ, RB= 8kΩ, β = 50, VBE= 0.7V.
Find the operating point and stability factor.
Q3 a) Find the value of hoe in terms of CB h-parameters
b) Define h-parameters along with its units.

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Weak Students as per JNTUK End Examination – Previous Academic Year
Year: II Semester: I Academic Year: 2019-2020
S. Hall Ticket
Name %
No. No.
1
10
11
12
13
14
15
16
17
Note: Weak Students are the students who secure less than 50% marks in Previous JNTUK External
Examinations

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Date: Date:
List of Weak Students as per the First Mid Result
Mid : I Date :
Hall Ticket
S.No. Name Mid %
No.
1
10
11
12
13
Note: Weak Students are the students who secure less than 40% marks the first Mid.

Date: Date:
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Schedule of Remedial Classes
Year: II Semester: I Academic Year:2019-2020
S. Roll. Nos.
Date Day Period Theory / Retest
No. (No. Students attended)
1
10
Performance of Weak Students in Additional make-up Test
Roll Marks Marks

Name Roll No. Name
No. Obtained Obtained

Date: Date:
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

MID- Quality & Evaluation
Year: Semester: Academic Year:
Marks
Mid Date Date of
Questions entered in
Term Conducted distribution
register
Quality verified by HOD: Good/Average/Poor
Signature of the Head of the Department

Date:
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041
Course Completion Certificate
I am Dr.S.JaganMohan Rao faculty in the Department of ECE have taught ELECTRONICS
DEVICES AND CIRCUIT course to the students of II/B.Tech./I Semester and BTECH programme
during Academic Year _2019-2020____. I certified that, I have completed _____6____ units
(prescribed by JNTUK) on ___/ /18____________
Reasons, if any, for not completion of syllabus:

S.No Unit Non Reason(s)
covered %

Date: Date:
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041
HOD REVIEW (Fortnightly)
S.No. Date of Review Signature of HOD Signature of Principal

1
Quality Audit
Signature
Date of Signature of
S.No. Observation if any of
Audit Auditor
Auditee
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

CONCEPTUAL PLAN
Unit-1(Semi Conductor Physics)
At the end of the session the student is able to:
Session # Concept-1 Cognitive level Concept-2 Cognitive level
Insulators , Semiconductors and

Introduction to evaluation of
session 1 Understanding Metals classification of using Understanding
semiconductors
energy band diagram
session 2 Between mobility and conductivity Analyze
Electrons and holes in Intrinsic semi Electrons and holes in Extrinsic
session 3 Understanding Understanding
conductors semi conductors
session 4 TUTORIAL 1
session 5 Diffusion and Drift Current Understanding
session 6 Hall Effect Understanding Charge densities in semiconductors Evaluating
session 8 Continuity equation Analyze

session 9 Law of Junction Understanding Fermi Dirac Function Understanding
Fermi level in Extrinsic
session 10 Fermi level in Intrinsic Semiconductors Evaluating Evaluating
Semiconductors
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Unit-2(Junction Diode Characteristics)
session 1 Open circuited p-n junction, Creating
session 2 Biased PN Junction Diode Creating
session 3 Diode Equation Analyzing Current components in PN junction Diode Evaluating
Temperature dependence on V-I

session 5 V-I Characteristics Understanding Creating
characteristics
session 6 Diode resistance Understanding Diode capacitance Understanding
session 7 Energy band diagram of PN junction Diode. Understanding
session 8 Zener diode Applying Zener Diode Mechanism and Applications Understanding
session 9 TUTORIAL 5 Understanding
session 10 LED,LCD Understanding
Construction, operation and characteristics of Construction, operation and characteristics

session 11 Applying Applying
Photodiode of Varactor diode
Construction, operation and characteristics of
session 12 Applying
Tunnel Diode
Construction, operation and characteristics of
session 13 Applying
DIAC, TRIAC
session 14 Construction, operation and characteristics of SCR Applying
session 15 Construction, operation and characteristics of UJT Applying

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

UNIT-III Rectifiers and Filters:

Session # Concept-1 Mode of teaching Cognitive level Concept-2 Cognitive level
session 1 Basic Rectifier setup CHALK TALK Understanding
session 2 Derivations of characteristics of HWR CHALK TALK Evaluating
session 3 Derivations of characteristics of FWR CHALK TALK Evaluating
Derivations of characteristics of Bridge
session 4 CHALK TALK Evaluating
rectifier
session 5 Rectifier circuits-operation CHALK TALK Understanding Input and output waveforms Understanding
session 7 Inductor filter, CHALK TALK Understanding
session 8 Capacitor filter CHALK TALK Understanding
session 9 L- section filter CHALK TALK Understanding π- section filter Understanding
session 10 Explain Multiple L - section CHALK TALK Understanding Multiple -section filter Understanding
Comparison of various filter circuits in terms

session 11 CHALK TALK Understanding
of ripple factors
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041
UNIT-IV Transistor Characteristics:

Mode of
teaching
Transistor equation, Transistor
session 1 Bipolar Junction Transistor CHALK TALK Understanding Understanding
current components
session 2 Transistor configurations CHALK TALK Analyze Transistor as an amplifier Understanding
Characteristics of BJT in Common
Emitter
Characteristics of transistor in
Characteristics of BJT in Common
session 4 CHALK TALK Understanding Common Collector, Punch Understanding
Base
through/ reach through
session 6 Ebers-Moll model of a transistor CHALK TALK Understanding
typical transistor junction
session 7 Photo transistor CHALK TALK Understanding Understanding
voltage values
session 8 FET CHALK TALK Understanding Construction of N-channel JFET Creating
Characteristic parameters of
session 9 Operation of N-Channel JFET CHALK TALK Understanding Understanding
JFET
session 11 Construction of Enhancement MOSFET CHALK TALK Understanding Operational Characteristics Understanding
session 12 Construction of Depletion MOSFET CHALK TALK Understanding
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Comparison between JFET and
MOSFET.
UNIT-V Transistor Biasing and Thermal Stabilization
Mode of
teaching
operating point ,load line
session 1 Need for biasing CHALK TALK Understanding Understanding
analysis
session 2 Method of BJT Biasing CHALK TALK Understanding Stability Evaluating
session 3 Fixed bias CHALK TALK Understanding Collector to base bias Creating
session 4 Self bias CHALK TALK Understanding
Stabilization against variations in VBE,

IC and Stability factors, (S, S’ , S’’ )
session 7 Compensation Techniques CHALK TALK Understanding Thermal runaway Understanding

Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

session 8 FET Biasing- methods CHALK TALK Evaluating stabilization Understanding
UNIT-VI Small Signal Low Frequency Transistor Amplifier Models

Mode of
teaching
session 1 Two port network CHALK TALK Evaluating Transistor hybrid mode Evaluating
session 2 Determination of h-parameters CHALK TALK Evaluating conversion of h-parameters Analyzing
Generalized analysis of transistor
amplifier model using h-parameters
Analysis of CB amplifier using exact and
session 4 CHALK TALK Analyzing
approximate analysis
Analysis of CE amplifier using exact and
Analysis of CC amplifier using exact and
session 7 Comparison of transistor amplifiers. CHALK TALK Understanding
Generalized analysis of small signal FET
model
session 10 Analysis of CS amplifiers CHALK TALK Analyzing
session 11 Analysis of CG and CD amplifiers CHALK TALK Analyzing
session 12 Comparison of FET amplifiers. CHALK TALK Understanding
Electronic
Devices
Year: Sem.:
and
Circuits
II I
R1621041

Edc Course File New 06.06.2019

Transféré par

Informations du document

Description originale:

Copyright

Formats disponibles

Partager ce document

Partager ou intégrer le document

Options de partage

Avez-vous trouvé ce document utile ?

Ce contenu est-il inapproprié ?

Droits d'auteur :

Formats disponibles

Edc Course File New 06.06.2019

Transféré par

Droits d'auteur :

Formats disponibles

Course File- Ac.

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Name of the Faculty : Dr. B.S.SATHISH

Department : Electronics and Communication Engineering (ECE)

Name of the Programme : B. Tech

Batch : 2018 – 2022

Programme : Electronics and Communication Engineering (ECE)

Title of the Course : Electronic Devices and Circuits

Course Code : R1621041

Course Type : Core

Number of Students : 57 & 60

Signature of the Head of the Department Signature of the Faculty

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Signature of the Head of the Department Signature of the Faculty

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Name of the Faculty : Dr. B.S.SATHISH

Guidelines to Study the Subject

Signature of the Head of the Department Signature of the Faculty

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

After going through this course the student

Know the construction, working principle of

The principal of working and operation of Understand the construction, principle of

Know the need of transistor biasing,

Signature of the Faculty

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Faculty Academic Coordinator HOD Dean Academics

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

UNIT- III Rectifiers and Filters: Basic Rectifier setup, half

UNIT- IV Transistor Characteristics: BJT: Junction transistor,

UNIT- V Transistor Biasing and Thermal Stabilization : Need

UNIT- VI: Small Signal Low Frequency Transistor Amplifier

Total No. of Instructional periods available for the course: 88 Hours/Periods

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

LESSON PLAN (2019-20)

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Faculty Academic Coordinator HOD Dean Academics

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Faculty Academic Coordinator HOD Dean Academics

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

5. A bar of intrinsic Ge 6 cm long is subjected to a potential difference of 12 V. If the velocity of

𝑅𝐸 = 100 𝛺, 𝛽 = 99, 𝑉 𝐶𝐸 = 6 𝑉, 𝑎𝑛𝑑 𝑉𝐶𝐶 = 10 𝑉. (Assume data if necessary)

Faculty Academic Coordinator HOD Dean Academics

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

7. A silicon PN junction has reverse saturation current of 30 𝑛𝐴 at a temperature of 300 𝐾.

Faculty Academic Coordinator HOD Dean Academics

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Faculty Academic Coordinator HOD Dean Academics

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Q2: a) Explain forward and reverse bias in case of PN Junction.

Q1: a) Explain the construction and working of Enhancement MOSFET.

Faculty Academic Coordinator HOD Dean Academics

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Year: II Semester: I Academic Year: 2019-2020

Signature of the Head of the Department Signature of the Faculty

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

List of Weak Students as per the First Mid Result

Signature of the Head of the Department Signature of the Faculty

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Year: II Semester: I Academic Year:2019-2020

Performance of Weak Students in Additional make-up Test

(prescribed by JNTUK) on _/ /18__________