PD - 96132

IRF7380QPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance VDSS RDS(on) max ID
73m:@VGS = 10V
l N Channel MOSFET
l Surface Mount 80V 2.2A
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free 1 8
S1 D1

Description G1
2 7
D1
Specifically designed for Automotive applications. Additional 3 6
S2 D2
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, G2
4 5
D2
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an Top View SO-8
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V h
3.6
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 2.9 A
IDM Pulsed Drain Current c 29
PD @TA = 25°C Maximum Power Dissipation 2.0 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt e 2.3 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient (PCB Mount) * ––– 50

Notes  through † are on page 8

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 61 73 mΩ VGS = 10V, ID = 2.2A f
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 80V, VGS = 0V
––– ––– 250 VDS = 64V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 4.3 ––– ––– S VDS = 25V, ID = 2.2A
Qg Total Gate Charge ––– 15 23 ID = 2.2A
Qgs Gate-to-Source Charge ––– 2.9 ––– nC VDS = 40V
Qgd Gate-to-Drain ("Miller") Charge ––– 4.5 ––– VGS = 10V f
td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 40V
tr Rise Time ––– 10 ––– ID = 2.2A
td(off) Turn-Off Delay Time ––– 41 ––– ns RG = 24Ω
tf Fall Time ––– 17 ––– VGS = 10V f
Ciss Input Capacitance ––– 660 ––– VGS = 0V
Coss Output Capacitance ––– 110 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 15 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 710 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 72 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 140 ––– VGS = 0V, VDS = 0V to 64V g
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy dh ––– 75 mJ
IAR Avalanche Current c ––– 2.2 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 3.6 A MOSFET symbol D

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 29 A integral reverse G

(Body Diode) ch p-n junction diode.

S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.2A, VGS = 0V f
trr Reverse Recovery Time ––– 50 ––– ns TJ = 25°C, IF = 2.2A, VDD = 40V
Qrr Reverse Recovery Charge ––– 110 ––– nC di/dt = 100A/µs f
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRF7380QPbF

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

10 5.0V 5.0V
4.5V 4.5V
4.3V 4.3V
4.0V 10 4.0V
BOTTOM 3.7V BOTTOM 3.7V
1

0.1
3.7V
1 3.7V

0.01

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 150°C
Tj = 25°C
0.001 0.1
0.1 1 10 100 1000 0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
I D = 3.6A
RDS(on), Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)

2.0

10
T J = 150°C 1.5
(Normalized)

T J = 25°C 1.0
1

0.5
VDS = 15V
20µs PULSE WIDTH
V GS = 10V
0 0.0
3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF7380QPbF

100000 12
VGS = 0V, f = 1 MHZ ID= 2.1A
Ciss = Cgs + Cgd, Cds SHORTED VDS= 64V
Crss = Cgd 10 VDS= 40V

VGS , Gate-to-Source Voltage (V)

10000
Coss = Cds + Cgd
VDS= 16V
C, Capacitance(pF)

8
1000 Ciss
6
100 C oss
4
Crss
10
2

1 0
1 10 100 0 2 4 6 8 10 12 14 16
VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

10 10

T J= 25 ° C
100µsec

TJ = 150 ° C
1 1 1msec

Tc = 25°C 10msec
Tj = 150°C
V GS = 0 V Single Pulse
0.1 0.1
0.0 0.5 1.0 1.5 2.0
1 10 100 1000
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF7380QPbF

4.0
RD
VDS

VGS
3.0
D.U.T.
RG
+
-V DD
ID , Drain Current (A)

10V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

1.0
Fig 10a. Switching Time Test Circuit

VDS
90%
0.0
25 50 75 100 125 150

TA , Ambient Temperature (°C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Ambient Temperature

Fig 10b. Switching Time Waveforms

100

D = 0.50
(Z thJA )

0.20
10
0.10

0.05
Thermal Response

0.02 P DM

1
0.01 t1

t2

SINGLE PULSE
Notes:
(THERMAL RESPONSE)
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJA +T A
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF7380QPbF

RDS(on) , Drain-to -Source On Resistance (m Ω)

95
RDS (on) , Drain-to-Source On Resistance (mΩ)

800

90 700

85
600
80
VGS = 10V 500
75
400
70
300
65 ID = 3.6A
60 200

55 100

50 0
0 5 10 15 20 25 30 3.0 5.0 7.0 9.0 11.0 13.0 15.0
ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.

QG
50KΩ VGS
12V .2µF
.3µF QGS QGD
+
D.U.T.
V
- DS
200
VG ID
EAS, Single Pulse Avalanche Energy (mJ)

VGS
TOP 1.0A
3mA Charge 1.8A
IG ID
160 BOTTOM 2.2A
Current Sampling Resistors

Fig 14a&b. Basic Gate Charge Test Circuit 120

and Waveform

80

15V

V(BR)DSS 40
tp L DRIVER
VDS

RG D.U.T +
V
- DD 0
IAS A
25 50 75 100 125 150
20V

I AS
tp 0.01Ω Starting TJ, Junction Temperature (°C)

Fig 15a&b. Unclamped Inductive Test circuit Fig 15c. Maximum Avalanche Energy
and Waveforms Vs. Drain Current
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 IRF7380QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7380QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by „ When mounted on 1 inch square copper board.
max. junction temperature. … Coss eff. is a fixed capacitance that gives the same charging time as
‚ Starting TJ = 25°C, L = 31mH Coss while VDS is rising from 0 to 80% VDSS.
RG = 25Ω, IAS = 2.2A. † ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
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