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J
J
B
BEL Placement Paper 2 B
I
I
G (Technical-Electronics-IInd) G
D
D
E
1. Resistivity of silicon in ohms cm. is approx. equal to
E
A
a. 50 b. 1012 c. 230k d. 10-6 A
L
L
2. Rsistivity ofGermanium in ohms cm. is approx. equal to
J J

B a. 50 b. 10-12 c. 50k d. 10-6 B

I I

G
3. The number of free electrons/cubic cm intrinsic Germanium at room temperature is approx. equal to
G

D
a. 1.5*1010 b. 2.5*1013 c. 1000 d. 5*106 D

E E

A 4. The number of free electrons/cubic cm of intrinsic silicon at room temperature is approx. equal to A

L L
a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106
J J
5. The forbidden energy gap for silicon is B
B

I I
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV
G G

D 6. The forbidden energy gap for Germanium is D

E E
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV
A A

L 7. N type material is formed by the addition of the following (penta valent )atom in n to semiconductor L

J
material J

B
B
a. Antimony
I
I

G b. Arsenic G

D
D
c. Phosphorous E
E
A
A d. Any of the above
L
L
8. P type material is formed by the addition of the following [Trivalent] atom tn to semiconductor J
J
material
B
B
I
I a. Boron b. Gallium c. Indium d. Any of the above
G
G
9. Impurity atoms that produces N type material by its addition in semiconductor is called D
D
E
E a. Donar b. Acceptor c. Conductor d. Insulator
A
A
L
L

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J
J
B
10. Impurity atoms that produces P type material by its addition in semiconductor is called B
I
I
G a. Donar b. Acceptor c. Conductor d. Insulator
G
D
11. Dynamic resistance of a diode Rd is if voltage changes is DVd and the current change is D Id D
E
E
A a. D Vd / D Id A
L
L
b. D Id / D Vd
J J

B c. 1 / DVd B

I I
d. 1 / D Id
G G

D 12. Point contact diodes are preferred at very high frequency, because of its low junction D

E E
a. Capacitance and inductance
A A

L
b. Inductance L

J J
c. Capacitance
B B

I 13. Identify the circuit given below I

G G
a. AND gate
D D

E
E b. OR gate
A A

L
c. Rectifier L

J
J d. NOR gate
B
B

I
14. Identify the circuit given below I

G
G
a. AND gate
D
D

E b. OR gate E

A
A
c. Rectifier L
L

J
J d. NOR gate
B
B
15. DC value of a Half wave rectifier with Em as the peak value of the input is I
I
G
G a. 0.318Em
D
D

E
b. 0.418Em E

A
A
c. 0.518Em L
L

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J
B
B
I d. 0.618Em I
G
G
16. Change in Zener voltage of 10V at 100o C if temperature co-efficient is 0.072%o C as
D
D
E
a. 0.54 V b. 0.74 V c. 0.64 V d. 0.14 V E
A
A
L 17. If Tc is th e% temperature co of / oC and Vz as zener voltage and T as change in temperature then
L
the change in zener voltage is
J J

B a. B

I I
b.
G G

D c. 100. Vz. Tc DT D

E E
d. None of these of the above
A A

L
18. PIV for a full wave rectifier, if Em is the peak voltage is L

J J
a. Em b. 1.5Em c. 0.636Em d. 2Em
B B

I 19. Schottky Barrier diodes becomes important at I

G G
a. DC level operation
D D

E
E b. Low frequency operation
A A

L
c. High frequency operation L

J
J d. None of these
B
B

I
20. Clamping network is the one that will clamp the signal to a I

G
G
a. Different peak value
D
D

E b. Different DC level E

A
A
c. Different polarity level L
L

J
J d. Different RMS level
B
B
21. Clipping network is the one that will clip a portion of the I
I
G
G a. Input signal without distorting the remaining portion
D
D

E
b. Input signal with distorting the remaining portion E

A
A
c. Any of the above L
L

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J
B
B
I d. None of these I
G
G
22. Transition capacitance Ct of a Varicap diode with Knee voltage Vt, reverse voltage Vr and K, the
D
constant based on semiconductor material and the construction technique & N dependent on type of D
E
junction is given by E
A
A
L a. 1 / K (Vt + Vr)N/2
L

J b. 1 / K (Vt + Vr)N J

B B
c. K / (Vt + Vr)N
I I

G
d. K / (Vt + Vr)1/N G

D D

E 23. Ct = K / (Vt + Vr)N where Vt Knee voltage, Vr reverse voltage, K manufacturing dependent E
constant and N dependent on type of junction, for alloy junction the value of N is
A A

L
a. 1/3 b. 2/3 c. 1/2 d. 1/4 L

J J
24. Ct = K / (Vt + Vr)N where Vt Knee voltage, Vr reverse voltage, K manufacturing dependent
B
B constant and N dependent on type of junction, for diffused junction the value of N is
I I

G
a. 1/3 b. 2/3 c. 1/2 d. 1/4 G

D D
25. In JFET, the drain current Id is given by (Idss drain – source saturation current Vgs – Gate – source
E
E voltage, Vp the pinch off voltage)
A A

L
a. Idss[1 – Vp/Vgs] L

J
J b. Idss(1 – Vgs/Vp)2
B
B

I
c. Idss[1 – Vgs/Vp) I

G
G
d. Idss(1 – Vgs/Vp)3/2
D
D

E 26. The shadow mask in colour tube is used to E

A
A
a. Reduce X-Ray emission L
L

J
J b. Ensure each beam hits its own dots
B
B
c. Increase screen brightness I
I
G
G d. Provide degaussing for the screen
D
D

E
27. Indicate which of the following signal is not transmitted in colour TV E

A
A
a. Y b. Q c. R d. I L
L

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J
B
B
I 28. Another name for horizontal retrace in TV receiver is the I
G
G
a. Ringing b. Burst c. Damper d. Fly back
D
D
E
29. Another name for the colour sync in the colour TV system E
A
A
L a. Ringing b. Burst c. Damper d. Fly back
L

J 30. The HV anode supply for a picture tube of a TV receiver is generated in the J

B B
a. Mains transformer
I I

G
b. Vertical output stage G

D D

E c. Horizontal output stage E

A A
d. Horizontal oscillator
L L

31. The output of vertical amplifier is

J J

B
B a. Direct current
I I

G
b. Amplified vertical sync pulse G

D D
c. A saw tooth voltage
E E

A d. A saw tooth current A

L L
32. In a transistor if Alpha = 0.98, current gain is equal to
J
J

B a. 29 b. 59 c. 69 d. 49 B

I
I
33. The active region in the common emitter configuration means G
G
D
D a. Both collector and emitter junction is reverse biased
E
E

A
b. The collector junction is forward biased and emitter junction A

L
L
c. The collector junction is reverse biased and emitter junction is forwared biased
J
J

B
d. Both collector & emitter junction are forward biased B

I
I
34. The saturation region in the common emitter configuration means that G
G
D
D a. Both collector & emitter junction are reverse biased
E
E
b. The collector junction is forward biased and emitter junction A
A
L
L

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J
J
B
c. The collector junction is reverse biased and emitter junction is forwared biased B
I
I
G d. Both collector & emitter junction are forward biased
G
D
35. The % of Red, Green & Blue in 100% White Y is given by D
E
E
A a. 30%, 59%, 11% A
L
L
b. 50%, 30%, 11%
J J

B c. 30%, 11%, 50% B

I I
d. 33.3%, 33.5%, 38.3%
G G

D 36. Equalizing pulse width, if H is the Horizontal sync rate D

E E
a. 0.64 H b. 0.07 H c. 0.04 H d. 0.16 H
A A

L
37. In a simple RC network the bandwidth is equal to L

J J
a. 1/2 p RC
B B

I b. RC / 2 I

G G
c. 2 C / p R
D D

E
E d. 2 p / RC
A A

L
38. The time constant of a RC network is given by L

J
J a. RC b. C/R c. R/C d. None of these
B
B

I
39. First zero crossing of pulse frequency spectrum occurs at if d is the pulse width, T is the pulse I
repetition rate G
G
D
D a. 1/d b. d/T c. T/d d. T
E
E

A
40. The distortion less output characteristic of a network means A

L
L
a. Constant amplitude and linear phase shift over frequency
J
J

B
b. Linear phase shift and amplitude need not be constant B

I
I
c. Any amplitude and phase G
G
D
D d. None of these
E
E
41. Single sideband means suppressed A
A
L
L

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J
B
a. Carrier B
I
I
G b. Carrier and one side band
G
D
c. One side band D
E
E
A d. None of these A
L
L
42. In an amplitude modulated signal, lower side band frequency is equal to (if the carrier frequency is
J fc and modulation frequency is fm) J

B B
a. fm + fc b. fc – fm c. fm r fc d. fc / fm
I I

G
43. Modulation index of the frequency modulation depends on G

D D

E a. Amplitude & frequency of the modulation signal E

A A
b. Frequency and amplitude of carrier signal
L L

c. Carrier frequency
J J

B
B d. None of these
I I

G
44. The BW of the narrow band FM if modulating frequency is fm G

D D
a. 3 r fm b. 2 r fm c. 2.5 r fm d. 10 r fm
E E

A 45. Reactance tube modulator is known for A

L L
a. FM b. AM c. PPM d. PAM
J
J

B 46. Bandwidth and rise time product is B

I
I
a. 0.35 b. 0.45 c. 0.30 d. 0.49 G
G
D
D 47. Energy gap, Lg, for Germanium at room temp [300o K] is
E
E

A
a. 0.72eV b. 1.1eV c. 1.53eV d. 0.2eV A

L
L
48. Volt equivalent of temperature VT, at 116o K is
J
J

B
a. 0.11V b. 0.01V c. 1.16V d. 0.1V B

I
I
49. Reverse saturation current of a Ge.diode is in the range of G
G
D
D a. mA b. uA c. nA d. pA
E
E
50. Cut-in voltage V for silicon is approximately A
A
L
L

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J
J
B
a. 0.2V b. 0.6V c. 0.9V d. 1.1V B
I
I
G 51. Every 10o C rise in temp. the reverse saturation current
G
D
a. Doubles D
E
E
A b. Halves A
L
L
c. Triples
J J

B d. No change B

I I
52. Hall effect with reference to Metal or Semiconductor carrying a current I is placed in a transverse
G
magnetic field B, an electric field E is induced in G

D D

E a. Parallel to B E

A A
b. Perpendicular to I
L L

c. Perpendicular to both B & I

J J

B
B d. Perpendicular to B
I I

G
53. 1 eV (electron volt) is equal to: G

D D
a. 1.9 r 10-20 J
E E

A b. 1.6 r 10-19 J A

L L
c. 1.6 r 10-20 J
J
J

B d. 1.16 r 10-19 J B

I
I
54. Donar impurity is having a valency of: G
G
D
D a. 2 b. 3 c. 4 d. 5
E
E

A
55. Acceptor impurity is having a valency of A

L
L
a. 2 b. 3 c. 4 d. 5
J
J

B
56. Electron volt arises from the fact that if any electron falls through a potential of 1 volt, its kinetic B

energy will I
I
G
G a. Decrease, & potential energy will increase
D
D

E
b. Increase & potential energy decrease E

A
A
c. Be unaltered & potential energy decreases L
L

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J
J
B
B
I d. Increase & potential energy increase I
G
G
57. Hole is created in a semiconductor material if one of following impurities are added
D
D
E
a. Antimony E
A
A
L b. Arsenic
L

J c. Indium J

B B
d. Phosphorus
I I

G
58. Excess electron is created by G

D D

E a. Boran E

A A
b. Gallium
L L

c. Indium
J J

B
B d. Arsenic
I I

G
59. A snubber circuit is used across the SCR to protect against G

D D
a. The di/dt of the anode current
E E

A b. The dv/dt turn on A

L L
c. L.di/dt of load inductance
J
J

B d. None of these B

I
I
60. Germanium has the valency of G
G
D
D a. 2 b. 3 c. 4 d. 5
E
E

A
61. Silicon has the valency of A

L
L
a. 2 b. 3 c. 4 d. 5
J
J

B
62. Hole acts as a free charge carrier of polarity B

I
I
a. Negative G
G
D
D b. Positive
E
E
c. Neutral A
A
L
L

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J
J
B
d. None of these B
I
I
G 63. Burst signal in NTSC system is 8 cycles of the frequency of
G
D
a. Colour sub carrier D
E
E
A b. Picture carrier A
L
L
c. Sound carrier
J J

B d. None of these B

I I
64. Colour sub carrier reference burst is superimposed on the
G G

D a. Back porch of the each horizontal sync pulse D

E E
b. Front porch of the each horizontal sync pulse
A A

L
c. Front porch of the each vertical sync pulse L

J J
d. Back porch of the each vertical sync pulse
B B

I 65. The law of mass action with reference to semiconductor technology states that the product of free I

G
negative & positive concentration is a constant and G

D D
a. Independent of amount of donor and acceptor doping
E E

A b. Dependent on amount of donor and independent of the amount acceptor impurity doping A

L L
c. Depend on amount of both donor & acceptor impurity doping
J
J

B d. None of these B

I
I
66. The snubber circuit used across SCR is a simple G
G
D
D a. R-L network
E
E

A
b. RLC network A

L
L
c. LC network
J
J

B
d. RC network B

I
I
67. To limit the rate of rise of SCR anode current a small G
G
D
D a. Inductor is inserted in cathode circuit
E
E
b. Inductor is inserted in anode circuit A
A
L
L

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J
J
B
c. Capacitor is inserted in anode circuit B
I
I
G d. Capacitor is inserted in cathode circuit
G
D
68. Torque developed by a DC servo motor is proportional to the D
E
E
A a. Product of power and time A
L
L
b. Product of armature current and back emf
J J

B c. Armature voltage and armature current B

I I
d. Field voltage and field current
G G

D 69. Proportional Integral control D

E E
a. Reduces steady state error but reduces the forward gain
A A

L
b. Increases the forward gain and reduces the steady state error L

J J
c. Increases the steady state error and increases the forward gain
B B

I d. None of these I

G G
70. Increasing the servo bandwidth:
D D

E
E a. Improves signal to noise ratio
A A

L
b. Improves speed response and lowers signal to noise ratio L

J
J c. Improves power output
B
B

I
d. None of these I

G
G
71. Notch filter is
D
D

E a. Low pass filter E

A
A
b. High pass filter L
L

J
J c. Narrow stop band filter
B
B
d. Narrow pass band filter I
I
G
G 72. In TV Receivers the Electron beam deflection method used is
D
D

E
a. Electro static E

A
A
b. Electro magnetic L
L

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J
J
B
B
I c. Magnetic I
G
G
d. All the above
D
D
E
73. In a line of sight communication the maximum range R in miles between the receiver antenna and E
A transmitter antenna of height H in feet is approximately A
L
L
a. R = 1.93 ÖH
J J

B b. R = 1.23 ÖH B

I I
c. R = 1.53 ÖH
G G

D d. R = 2.03 ÖH D

E E
74. In wavelength of the 60 MHz carrier frequency is
A A

L
a. 10 metres L

J J
b. 15 metres
B B

I c. 5 metres I

G G
d. 2.5 metres
D D

E
E 75. In standard TV receiving antenna the dipole element is
A A

L
a. 0.5 of the wave length L

J
J b. 0.25 of the wave length
B
B

I
c. 1.5 of the wave length I

G
G
d. 1.0 of the wave length
D
D

E 76. The characteristics of FET are similar to: E

A
A
a. Triode L
L

J
J b. Tertode
B
B
c. Pentode I
I
G
G d. Diode
D
D

E
77. Charge coupled device is an array of capacitors whose structure is similar to: E

A
A
a. Shift register L
L

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J
J
B
B
I b. Flip-flop I
G
G
c. NAND gate
D
D
E
d. Amplifier E
A
A
L 78. Operational amplifier characteristics are which of the following:
L

J a. Infinite gain J

B B
b. Infinite input impedance
I I

G
c. Output impedance is zero G

D D

E d. All of the above E

A A
79. The typical value of the open loop gain in dB of an amplifier at DC with no feedback is:
L L

a. 90 to 100
J J

B
B b. 80 to 90
I I

G
c. 0 to 50 G

D D
d. 50 to 70
E E

A 80. The 3 dB band width means the frequency at which A

L L
a. The open loop voltage gain reduced to 0.707
J
J

B b. The open loop gain reduced to unity B

I
I
c. Maximum voltage of a signal is without distortion G
G
D
D d. It is a medium wave band width of radio receiver
E
E

A
81. Rise time of an amplifier is defined as time required A

L
L
a. To change from 0 to 100 % of its final value
J
J

B
b. To change from 0 to 50 % of its final value B

I
I
c. To change from 10 to 90 % of its final value G
G
D
D d. To change from 10 to 100 % of its final value
E
E
82. High speed amplifier design emphasized on A
A
L
L

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J
J
B
a. Extremely small bandwidth B
I
I
G b. Very slow response
G
D
c. Unity gain bandwidth after 10 MHz D
E
E
A d. None of these A
L
L
83. Tuned amplifier having the frequency range between
J J

B a. 150 KHz – 50 MHz B

I I
b. 100 Hz – 100 KHz
G G

D c. 100 KHz – 120 KHz D

E E
d. 50 MHz – 100 MHz
A A

L
84. The resonance frequency of a tuned circuit made up of R, L, C is given by L

J J
a. 1/2 pÖLC
B B

I b. 2 pÖLC I

G G
c. 2 p / ÖLC
D D

E
E d. ÖLC / 2
A A

L
85. The voltage follower can be obtained using operational amplifier L

J
J a. Without any feedback
B
B

I
b. Series parallel feedback of unity I

G
G
c. Parallel feedback
D
D

E d. Series feedback E

A
A
86. Fidelity of the amplifier is when L
L

J
J a. It is a linear amplifier
B
B
b. It does not add or subtract any spectral components I
I
G
G c. It amplifier each component by the same amount
D
D

E
d. All of the above E

A
A
87. What would be the output when two input sine waves of frequency 50 KHz and 100 KHz passed L
L

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J
J
B
through an amplifier in the medium signal B
I
I
G a. 50 KHz and 100 KHz
G
D
b. 100 KHz and 200 KHz D
E
E
A c. 50 KHz and 150 KHz A
L
L
d. All of the above
J J

B 88. The important application of Schmitt trigger is B

I I
a. To convert slowly varying input voltage to abrupt voltage change
G G

D b. To convert abruptly varying input voltage into slowly varying output D

E E
c. To change the frequency of the input
A A

L
d. None of these L

J J
89. Meaning of decoding is
B B

I a. Binary addition I

G G
b. Data transmission
D D

E
E c. Demultiplexing
A A

L
d. Storage of binary information L

J
J 90. Approximately how many number of gates are incorporated in SSL chip
B
B

I
a. 12 I

G
G
b. 100
D
D

E c. Excess of 100 E

A
A
d. Excess of 1000 L
L

J
J 91. The circuit diagram represents which one of the following
B
B
a. Half adder I
I
G
G b. Full adder
D
D

E
c. Exor gate E

A
A
d. AND gate L
L

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J
J
B
B
I 92. Flip flop cannot be called as I
G
G
a. Bistable multivibrator
D
D
E
b. 1 Bit memory unit E
A
A
L c. latch
L

J d. combinational circuit J

B B
93. The important use of low pass filter in power supply is
I I

G
a. To get the regulation in the output voltage G

D D

E b. To filter out the ripple frequency E

A A
c. To increase the current rating
L L

d. To convert AC into DC
J J

B
B 94. Binary equivalent of the decimal number 145 is
I I

G
a. 10010001 G

D D
b. 1001011
E E

A c. 1010001 A

L L
d. 1100010
J
J

B 95. In which of the following gate the output will be high when all the maintained at high level B

I
I
a. NOR G
G
D
D b. AND
E
E

A
c. NAND A

L
L
d. EXOR
J
J

B
96. Which of the following definition is true in the De Morgan’s theorem B

I
I
a. Multiplication symbols are replaced by addition symbol G
G
D
D b. Addition symbols are replaced by Multiplication symbol
E
E
c. Each of the terms are expressed in the complementary form A
A
L
L

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J
J
B
d. All of the above B
I
I
G 97. 8421/BCD code fro a decimal number 149 is
G
D
a. 0001 0100 1001 D
E
E
A b. 10010101 A
L
L
c. 10101001
J J

B d. None of these B

I I
98. Combinational circuit are mainly characterized by
G G

D a. Output depends upon the previous state & presents state D

E E
b. Output depends upon the input at that particular instant
A A

L
c. Output depends upon the presents state & the clock state L

J J
d. Output does not depends upon the input at all
B B

I 99. A flip flop is defined as I

G G
a. A bistable device with two complementary outputs
D D

E
E b. It is memory element
A A

L
c. It will respond to input and it is a basic memory element L

J
J d. All of the above
B
B

I
100. Four bit code is called I

G
G
a. Nibble
D
D

E b. Byte E

A
A
c. Word L
L

J
J d. Register
B
B
Answer:- I
I
G
G 1. c
D
D

E
2. a E

A
A
3. a L
L

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J
J
B
B
I 4. b I
G
G
5. a
D
D
E
6. b E
A
A
L 7. d
L

J 8. d J

B B
9. a
I I

G
10. b G

D D

E 11. a E

A A
12. c
L L

13. b
J J

B
B 14. a
I I

G
15. a G

D D
16. a
E E

A 17. a A

L L
18. d
J
J

B 19. c B

I
I
20. b G
G
D
D 21. a
E
E

A
22. c A

L
L
23. c
J
J

B
24. a B

I
I
25. b G
G
D
D 26. b
E
E
27. c A
A
L
L

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J
J
B
28. d B
I
I
G 29. b
G
D
30. c D
E
E
A 31. d A
L
L
32. d
J J

B 33. c B

I I
34. d
G G

D 35. a D

E E
36. c
A A

L
37. a L

J J
38. d
B B

I 39. a I

G G
40. a
D D

E
E 41. b
A A

L
42. b L

J
J 43. a
B
B

I
44. b I

G
G
45. b
D
D

E 46. a E

A
A
47. a L
L

J
J 48. b
B
B
49. b I
I
G
G 50. b
D
D

E
51. a E

A
A
52. c L
L

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J
J
B
B
I 53. b I
G
G
54. b
D
D
E
55. b E
A
A
L 56. b
L

J 57. c J

B B
58. d
I I

G
59. b G

D D

E 60. c E

A A
61. c
L L

62. b
J J

B
B 63. a
I I

G
64. a G

D D
65. a
E E

A 66. d A

L L
67. b
J
J

B 68. b B

I
I
69. a G
G
D
D 70. b
E
E

A
71. c A

L
L
72. c
J
J

B
73. b B

I
I
74. c G
G
D
D 75. a
E
E
76. c A
A
L
L

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J
J
B
77. a B
I
I
G 78. d
G
D
79. d D
E
E
A 80. a A
L
L
81. c
J J

B 82. c B

I I
83. a
G G

D 84. a D

E E
85. b
A A

L
86. d L

J J
87. a
B B

I 88. a I

G G
89. c
D D

E
E 90. a
A A

L
91. a L

J
J 92. d
B
B

I
93. b I

G
G
94. a
D
D

E 95. b E

A
A
96. d L
L

J
J 97. a
B
B
98. b I
I
G
G 99. d
D
D

E
100.a E

A
A
L
L

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