Electronic Devices and Circuits Lab (R16)

EXPERIMENT-1
P-N JUNCTION DIODE CHARACTERISTICS

DATE:

AIM: To verify the V-I characteristics of P-N junction diode and to calculate the Static and
dynamic resistances at suitable operating points in forward and reverse bias conditions.

EQUIPMENTS:
1. Regulated Power Supply (0-30V)-1No.
2. Volt meter-(0-20V)&(0-2V)-1No.
3.Ammeter-(0-20mA)&(0-750µA)-1No.

ELECTRONIC COMPONENTS:
1. P-N junction diode (1N 4007)-1No.
2. Resistors 1kΩ-1No.
3. Bread Board-1No.
4. Connecting Wires-1 Set.

THEORY:
Forward bias of p-n junction diode:
If an external d.c. voltage is connected in such a way that the p-region terminal is
connected to the positive of the d.c. voltage and the n-region is connected to the negative of
the d.c. voltage, the biasing condition is called forward biasing. The p-n junction is said to
be forward biased.
While crossing the junction, the electrons give up the amount of energy equivalent to
the barrier potential.
Forward resistance of a diode:
The forward resistance is defined in two ways:
1. Static Forward Resistance:
Forward d .c. voltage OA
RF   at po int E
Forward d .c. current OC
2. Dynamic forward resistance:
The resistance offered by the p-n junction under a.c. conditions is called Dynamic
resistance denoted as rf.
V 1 1
rf   
I  I / V  Slope of forward characteristics

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 Electronic Devices and Circuits Lab (R16)

Reverse bias of p-n junction diode:

If an external d.c. voltage is connected in such a way that the p-region terminal of a p-
n junction is connected to the negative of the battery and the n-region terminal of a p-n
junction is connected to the positive of the battery, the biasing condition is called reverse
biasing. The p-n junction is said to be forward biased.

Reverse resistance of a diode:

The p-n junction offers large resistance in the reverse biased condition called reverse
resistance. This is also defined in two ways.
1. Reverse static resistance:
This is reverse resistance under d.c. conditions, denoted as Rr. It is the ratio of
appplied reverse saturation current I0.
OQ Applied reverse voltage
Rr  
I0 Re verse saturation current
2. Reverse dynamic resistance:
This is the reverse resistance under the a.c. conditions, denoted as rr. It is the ratio of
incremental change in the reverse voltage applied to the corresponding change in the reverse
current.
VR Change in reverse voltage
rr  
I R Change in rever se c urrent
Cut –in Voltage:
The voltage at which the diode current starts increasing rapidly is called cut-in
voltage, offset voltage, break-point voltage or threshold voltage. It is denoted by Vγ.

CIRCUIT DIAGRAM:

Forward bias:

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 Electronic Devices and Circuits Lab (R16)

Reverse bias:

PROCEDURE:
a) Forward Bias:
1) The circuit is connected as per the circuit Diagram.
2) The forward voltage is increased in steps of 0.1V to 1V and in steps of 1Vfrom
1V to 15V.
3) The readings of the meters (ammeter and voltmeter) are observed for every value
of forward voltage and are tabulated.

b) Reverse Bias:
1) The circuit is connected as per the circuit diagram.
2) The reverse voltage is increased in steps of 1V from 1V to 15 V.
3) The readings of meters (ammeter and voltmeter) are observed for every value of
Reverse voltage and are tabulated.

PRECAUTIONS:
1) Continuity of the wires must be checked.
2) The voltage level in the power supply must be kept in minimum position before
switching it ON and OFF.
3) The polarities of the diode (anode and cathode) are to be identified carefully before
connecting the circuit.

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 Electronic Devices and Circuits Lab (R16)

OBSERVATIONS:

Forward bias:

S.NO Applied Voltage(V) Diode Voltage (VD in V) Diode Current(ID in mA)

1. 0
2. 0.1
3. 0.2
4. 0.3
5. 0.4
6. 0.5
7. 0.6
8. 0.7
9. 0.8
10 0.9
11 1.0
12. 2.0
13. 3.0
14. 4.0
15 5.0
16. 6.0
17. 7.0
18. 8.0
19. 9.0
20. 10.0
21. 11.0
22. 12.0
23. 13.0
24. 14.0
25. 15.0

Reverse bias:

S.NO Applied Voltage(v) Diode Voltage(VD in V) Diode Current(ID in µA)

1. 0
2. 1
3. 2
4. 3
5. 4
6. 5
7. 6
8. 7
9. 8
10. 9
11. 10
12. 11
13. 12
14. 13
15. 14
16. 15

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 Electronic Devices and Circuits Lab (R16)

MODEL WAVEFORMS:
Forward Bias V-I characteristics
If(mA)

△If

△Vf

Vf(V)
Cutin voltage

Reverse Bias V-I characteristics

Vr(V)

△VR

△IR

IR(µA)

1.The cut in voltage (Vγ) of the diode is found to be ____V.

2.Static resistance in forward bias at ___V= VD/ID=____Ω.
3.Dynamic resistance in forward bias between ____V and ___V =∆V D/∆I D=___Ω.
4.Static resistance in reverse bias at ____V =VD/ID =_____MΩ.
5.Dynamic resistance in reverse bias between ____V and ____V=∆VD/∆ ID=____MΩ.

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 Electronic Devices and Circuits Lab (R16)

RESULT:

VIVA QUESTIONS:
1. What are Forward bias and Reverse bias ?
2. What is cutin voltage ?
3. What is cutin voltage for Ge & Si ?
4. Why do We prefer Si diode rather than Ge diode ?
5. What are the applications of PN Diode ?

REMARKS:

SIGNATURES OF FACULTY:

Dept.,of E.C.E,NSRIT,SONTYAM PAGE NO:

 Electronic Devices and Circuits Lab (R16)

EXPERIMENT-2
ZENER DIODE CHARACTERISTICS

DATE:

AIM: To verify the V-I characteristics of Zener diode and to calculate the Static and dynamic
resistances at suitable operating points in forward and reverse bias conditions.

EQUIPMENTS:
1. Regulated Power Supply (0-30V)-1No.
2. Volt meter-(0-20V)&(0-2V)-1No.
3.Ammeter-(0-20mA)-1No.

ELECTRONIC COMPONENTS:
1. Zener diode (6Z)-1No.
2. Resistors 1kΩ-1No.
3. Bread Board-1No.
4. Connecting Wires-1 Set.

THEORY:
The zener diode is a silicon p-n junction semiconductor device, which is generally
operated in its reverse breakdown region. The zener diodes have breakdown voltage range
from 3V to 200V.

In the forward biased condition, the normal rectifier diode and the zener diode operate
in similar fashion. But the zener diode is designed to be operated in the reverse saturation
current till the reverse voltage applied is less than the reverse breakdown voltage. When the
reverse voltage exceeds reverse breakdown voltage, the current through it changes drastically
but the voltage across it remains almost constant. Such a breakdown region is a normal
operating region for a zener diode.

When the reverse voltage applied to a zener diode is increased, initially the current
through it is very small, of the order of few μA or less. This is the reverse leakage current of
the diode, denoted by I0. At a certain reverse voltage, current through zener diode increases
rapidly. The change from a low value to large value of current is very sharp and well
defined. Such a sharp change in the reverse characteristics is called knee or zener knee of the
curve. At this knee, a breakdown is said to occur in the device. The reverse bias voltage at
which the breakdown occurs is called Zener breakdown voltage.

From the graph the dynamic resistance is defined as,

VZ 1 1
rz   
I Z  I Z   Slope of the reverse 
 V   
 Z   characteristic s in 
 zener region 
 

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 Electronic Devices and Circuits Lab (R16)

Breakdown Mechanisms in Zener Diode:

There are two distinct mechanisms due to which breakdown may occur in the zener
diode. One is called zener breakdown and the other avalanche breakdown.

CIRCUIT DIAGRAM:

Forward Bias:

Reverse Bias:

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 Electronic Devices and Circuits Lab (R16)

PROCEDURE:
a) Forward Bias:
1) The circuit is connected as per the circuit Diagram.
2) The forward voltage is increased in steps of 0.1V to 1V and in steps of 1Vfrom
1V to 15V.
3) The readings of the meters (ammeter and volt meter) are observed for every value
of forward voltage and are tabulated.

b) Reverse Bias:
1) The circuit is connected as per the circuit diagram.
2) The reverse voltage is increased in steps of 1V from 1V to 15 V.
3) The readings of meters (ammeter and voltmeter) are observed for every value of
Reverse voltage and are tabulated.

PRECAUTIONS:
1) Continuity of the wires must be checked.
2) The voltage level in the power supply must be kept in minimum position before
switching it ON and OFF.
3) The polarities of the diode (anode and cathode) are to be identified carefully
before connecting the circuit.

OBSERVATIONS:
Forward Bias:
S.NO Applied Voltage (V) Diode Voltage (VD) in V Diode Current (ID) in mA
1 0.1
2 0.2
3 0.3
4 0.4
5 0.5
6 0.6
7 0.7
8 0.8
9 0.9
10 1.0
11 2.0
12 3.0
13 4.0
14 5.0
15 6.0
16 7.0
17 8.0
18 9.0
19 10.0
20 11.0
21 12.0
22 13.0
23 14.0
24 15.0

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 Electronic Devices and Circuits Lab (R16)

Reverse Bias:

S.NO Applied Voltage (V) Diode Voltage (VD) in V Diode Current (ID ) in mA
1 1.0
2 2.0
3 3.0
4 4.0
5 5.0
6 6.0
7 7.0
8 8.0
9 9.0
10 10.0
11 11.0
12 12.0
13 13.0
14 14.0
15 15.0

MODEL WAVEFORMS:
Forward Bias V-I characteristics
If(mA)

△If

△Vf

Vf(V)
Cutin voltage

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 Electronic Devices and Circuits Lab (R16)

Reverse Bias V-I characteristics:

Vr(V)

△VR

△IR

IR(mA)

1.Static resistance in forward bias at ___V= VD/ID=_____Ω.

2.Dynamic resistance in forward bias between ___V and ___V =∆V D/∆I D=___Ω.
3.Static resistance in reverse bias at __V =VD/ID =_____KΩ.
4.Dynamic resistance in reverse bias between ___V and ___V=∆VD/∆ ID =____KΩ.

RESULT:

VIVA QUESTIONS:
1. What is Zener breakdown ?
2. What is Zener breakdown voltage ?
3. What is the difference between PN diode & Zener Diode ?
4. What are the application of Zener Diode ?

REMARKS:

SIGNATURE OF FACULTY:

Dept.,of E.C.E,NSRIT,SONTYAM PAGE NO:

 Electronic Devices and Circuits Lab (R16)

EXPERIMENT-3
RECTIFIERS (WITHOUT AND WITH C-FILTER)

DATE:

AIM: To study the characteristics and performance of Half Wave Rectifier and Full Wave
Rectifier with and without filter.

EQUIPMENTS:
1. Cathode Ray Oscilloscope (1 MHz) - 1No.
2. 9-0-9 V Center tapped step down transformer-1No.
3. Multemeters-2No.

ELECTRONIC COMPONENTS:
1. P-N junction diode -2No.
2. Resistors 1kΩ-1No,3.3kΩ , 5.6kΩ-1No,22kΩ -1No,100kΩ -1No.
3. Capacitors 100µf-1No.
4. Bread Board-1No.
5. CRO probes-2No.
6. Connecting Wires-1 Set.

THEORY:

A rectifier is a device which converts a.c. voltage to pulsating d.c. voltage, using one
or more p-n junction diodes.

Half Wave Rectifier:

The p-n junction diode conducts only in one direction. It conducts when forward
biased while practically it does not conduct when reverse biased. Thus if an alternating
voltage is applied across a p-n junction diode, during positive half cycle the diode will be
forward biased and will conduct successfully. While during the negative half cycle it will be
reversed biased and will not conduct at all. Thus the conduction occurs only during positive
half cycle.

Rectifier Efficiency: It signifies, how efficiently the rectifier circuit converts a.c. power
into d.c. power.

Ripple factor: The output of the rectifier is of pulsating d.c. type. The amount of a.c. content
in the output can be mathematically expressed by a factor called ripple factor. Less is the
ripple factor, better is the performance of the circuit.

Im
I DC   average vlaue


Im
I RMS 
2

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 Electronic Devices and Circuits Lab (R16)

R.M .S . value of a.c. component of output

Ripplefactor 
Average or d .c. componesnt of output

2
I 
   RMS   1
 I DC 

Full Wave Rectifier:

The full wave rectifier conducts during both positive and negative half cycles of input
a.c. supply. In order to rectify both the half cycles of a.c. input, two diodes are used in this
circuit. The diodes feed a common load RL with the help of a center tap transformer. The
a.c. voltage is applied through a suitable power transformer with proper turns ratio.

It is noted that the load current flows in both the half cycle of ac voltage and in the
same direction through the load resistance.

Ripple Factor(  )

As derived earlier in case of half wave rectifier the ripple factor is given by a general
expression,

2
I 
Ripple factor   RMS   1
 I DC 

For full wave IRMS = Im/ 2 and IDC = 21m/Π so,

Substituting in the above equation,

2
I / 2 2
Ripple factor   m   1  1
 2Im /   8

Ripple factor    0.48



This indicates that the ripple contents in the output are 48% of the d.c. component
which is much less than that for the half wave circuit.

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 Electronic Devices and Circuits Lab (R16)

CIRCUIT DIAGRAM:

Half Wave Rectifier Without Filter:

Half Wave Rectifier With Filter:

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 Electronic Devices and Circuits Lab (R16)

Full Wave Rectifier Without Filter:

Fullwave Rectifier With Filter:

PROCEDURE:
a) HWR WITHOUT FILTERS:
1) The circuit is connected as per the circuit Diagram.
2) The readings of ammeter and voltmeter are taken with the switch in both ac and dc modes
for IRMS RRMS IRMS and VDC.
3) Ripple factor is calculated by the formula:
γ =Vrm/V dc from the readings obtained. Observed for every value of
1) Step 2 is repeated for various values of load resistors.

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 Electronic Devices and Circuits Lab (R16)

b) HWR WITH FILTER

1) The circuit is connected as per the circuit Diagram.
2) The readings of ammeter and voltmeter are taken with the switch in both ac and dc modes
for Irms , vrms, Idc and Vdc..
3)Ripple factor is calculated by the formula:
γ =Vrms /V dc from the readings obtained. Observed for every value of
4) The values of ripple factor obtained practically are verified with the theoretical value given
1
by:  
2 3 fcRL

c) FWR WITHOUT FILTERS:

1) The circuit is connected as per the circuit Diagram.
2) The readings of ammeter and voltmeter are taken with the switch in both ac and dc modes
for Irms, vrms, Idc and Vdc.
3) Ripple factor is calculated by the formula:
γ =Vrm/V dc from the readings obtained. Observed for every value of Step 2 is repeated for
various values of load resistors.

d) FWR WITH FILTER :

1) The circuit is connected as per the circuit Diagram.
2) The readings of ammeter and voltmeter are taken with the switch in both ac and dc modes
For IrmsvrmsIdcand Vdc.
3) Ripple factor is calculated by the formula:
γ =Vrms/V dc from the readings obtained. Observed for every value of the values of ripple
factor obtained practically are verified with the theoretical value given by the formula
1
 
4 3 fcRL

PRECAUTIONS:
1. The continuity of wires and C.R.O. probes must be checked.
2. The voltages levels in the RPS must be kept in minimum position before switching it
“ON” or “OFF”.
3. The terminals of the transistor should be identified properly.
4. Readings should be taken without errors.
5. Interconnections should not be made on the bread board with power switched on.

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 Electronic Devices and Circuits Lab (R16)

OBSERVATIONS:
Half wave Rectifier without filter:-

S. No. RL(Ω) I DC (mA) VDC(volts) I rms (mA) V rms γ=

(volts) Vrms/VDC
1
2
3
4
5

Half wave Rectifier with filter:-

S. RL(Ω) I DC VDC(volts) I rms (mA) V rms γ= γ=

No. (mA) (volts) Vrms/VDC 1/2√3fCRL
1
2
3
4
5

Full wave Rectifier Without filter:-

S. No. RL(Ω) I DC (mA) VDC(volts) I rms (mA) V rms(volts) γ=

Vrms/VDC
1.
2.
3.
4.
5.

Full wave Rectifier with filter:-

S. RL(Ω) I DC VDC(volts) I rms (mA) V rms γ= γ=

No. (mA) (volts) Vrms/VDC 1/4√3fCRL
1.
2.
3.
4.
5.

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 Electronic Devices and Circuits Lab (R16)

MODEL WAVEFORMS:
Half Wave Rectifier :

The performance of Half wave rectifier is observed and its input and output waveforms are
observed
Theoretical value:
The ripple factor of HWR (γ) without filter = 1.21
The ripple factor of HWR (γ) with filter = 0.0296
Practical value:
The ripple factor of HWR (γ) without filter = ___
The ripple factor of HWR (γ) with filter = _____

Full Wave Rectifier:

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 Electronic Devices and Circuits Lab (R16)

The performance of Full Wave Rectifier is observed and its input and output waveforms are
observed
Theoretical value:
The ripple factor of HWR (γ) without filter = 0.48
The ripple factor of HWR (γ) with filter = 0.0234
Practical value:
The ripple factor of HWR (γ) without filter = ____
The ripple factor of HWR (γ) with filter = _______

RESULT:

VIVA QUESTION:
1. What is rectifier?
2. What is Half Wave Rectifier and Full Wave Rectifier ?
3. What is efficiency and Regulation ?
4. What are the applications of Rectifiers ?

REMARKS:

SIGNATURE OF THE FACULTY:

Dept.,of E.C.E,NSRIT,SONTYAM PAGE NO:

 Electronic Devices and Circuits Lab (R16)

EXPERIMENT-4
BJT CHARACTERISTICS(CE CONFIGURATION)
DATE:

AIM: To obtain the input and output characteristics of a given transistor in CE

configuration.

EQUIPMENTS:
1. Regulated Power Supply (0-30V)-1No.
2. Volt meter-(0-20V)&(0-2V)-1No.
3.Ammeter-(0-20mA)&(0-750µA)-1No.

ELECTRONIC COMPONENTS:
1. Transistor BC107-1No.
2. Resistors 100kΩ-1No, 1kΩ -1No.
3. Bread Board-1No.
4. Connecting Wires-1 Set.

THEORY:
If transistor is connected so that the emitter of the transistor is common to input as
well as the output, the configuration termed as common emitter configuration. In this
configuration the input is given between the base and emitter whereas output is obtained
between collector and emitter. Operation of a transistor in the active region is ensured by
forward biasing of the emitter-base junction and reverse biasing of the collector-base junction

Input Characteristics:
It is the curve of input current versus input voltage for a given output voltage.
The input characteristic for a CE configuration should be a curve of VBE versus IB for a
given value of VCE . For different values of VCE we can get different input characteristics
Ri = ∆VBE/IB at VCE constant.

Output characteristics:
It is the curve of output voltage versus output current for a given input current.
The output characteristics for a CE configuration should be a curve of V CE versus IC for a
given value of IB .For different values of IB we can get different output characteristics.

Ro = ∆V CE/IC at IB constant
βDC = IC/IB at constant VCE
β AC = ∆IC/∆IB at constant VCE

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 Electronic Devices and Circuits Lab (R16)

CIRCUIT DIAGRAM:

PROCEDURE:
PROCEDURE:-
1. The circuit is connected as per the circuit diagram.
2. For the input characteristics Output Voltage VCE kept constant and by varying VBE in steps
the I/P Current IB is noted.
3. For Output characteristics I/P Current IB is kept constant at particular value and for
different values of VCE , O/P Current IC is noted.
4. Graphs are plotted for both I/P and O/P values.

PRECAUTIONS:
1.The continuity of wires must be checked.
2. The voltages levels in the RPS must be kept in minimum position before switching it
“ON” or “OFF”.
3. The terminals of the transistor should be identified properly.
4. Readings should be taken without errors.
5. Interconnections should not be made on the bread board with power switched on.

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 Electronic Devices and Circuits Lab (R16)

OBSERVATION:
INPUT CHARACTERISTICS:

VCE = 0 volt VCE = 2 volt VCE =4 volt

S. No. VBB(v)
VBE(v) IB (µA) VBE (v) IB (µA) VBE(v) IB (µA)
1. 0.0
2. 0.1
3. 0.2
4. 0.3
5. 0.4
6. 0.5
7. 0.6
8. 0.7
9. 0.8
10. 0.9
11. 1.0
12. 2.0
13. 3.0
14. 4.0
15. 5.0
16. 6.0
17. 7.0
18. 8.0
19. 9.0
20. 10.0
21. 11.0
22. 12.0
23. 13.0
24. 14.0
25. 15.0

OUTPUT CHARACTERISTICS:

IB = 10 µA IE= 20µA IE = 30 µA
S. No. VCC(v)
VCE(v) IC (mA) VCE (v) IC (mA) VCE(v) IC (mA)
1. 0
2. 1.0
3. 2.0
4. 3.0
5. 4.0
6. 5.0
7. 6.0
8. 7.0
9. 8.0
10. 9.0
11. 10.0
12. 11.0
13. 12.0
14. 13.0

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 Electronic Devices and Circuits Lab (R16)

15. 14.0
16. 15.0

MODEL WAVEFORMS:

RESULT:

VIVA QUESTIONS:
1.what are the Transistor configuration?
2.What is Early Effect ?
3.What is Punch through Effect ?
4.What are the applications of Transistor ?

REMARKS:

SIGNATURE OF THE FACULTY:

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 Electronic Devices and Circuits Lab (R16)

EXPERIMENT-5
FET CHARACTERISTICS(CS CONFIGURATION)
DATE:

AIM: To obtain the transfer and drain characteristics of a given FET configuration.

EQUIPMENTS:
1. Regulated Power Supply (0-30V)-1No.
2. Volt meter-(0-20V)&(0-2V)-1No.
3.Ammeter-(0-20mA)&(0-750µA)-1No.

ELECTRONIC COMPONENTS:
1. FET (Field Effect Transistor) – BFW – 11-1No.
2. Resistors 100kΩ-1No, 680Ω-1No.
3. Bread Board-1No.
4. Connecting Wires-1 Set.

THEORY:
FET is a three terminal, unipolar device i.e, source, drain and gate. FET, the operation
depends upon the flow of majority charge carriers only. FETs have high input impedance,
High power gain. JFET can be either n-channel or p- channel. From the construction point
of View an n- channel JFET consists of bar of N-type silicon and heavily doped P-type
regions on either side of the bar. The bar acts as resistor between its two ends known as
source and drain. The heavily doped p-regions are called gates. Two gates are connected
together. The gate controls the the current flow from source to drain. The terminals source
and drain are interchangeable.

Static Drain Characteristics:

It is a curve between the drain current ID and to drain to source voltage VDS for a
given value of gate –source voltage VGS.
Pinch- Off Voltage: The value of VDS at which ID becomes essentially constant for VGS
=0V is known as Pinch- Off voltage (Vp) for a given FET, Vp has a fixed value. A
continuous increase VDS above the pinch-off voltage produces an almost constant drain
current.
A break down occurs when ID begins to increase very rapidly, with any further
increase in VDS break down can result in permanent damage to device, so JFETs should be
operated below breakdown within the constant current area.VGS controls ID.
Drain dynamic resistance rds= ∆VDS/∆I D at constant VGS

Transfer Characteristics:
It is a curve between VGS and ID fpr a given value of VDS.
Forward transfer admittance or mutual conductance=gm = ∆ID/∆V GS at a constant value of
VDS

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 Electronic Devices and Circuits Lab (R16)

CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as shown in the circuit diagram.
2. Connect the signal generator output to input terminals of the circuit and CH-I of dual
trace CRO.
3. Connect the output terminal of the circuit CH-II of the dual trace CRO.
4. Set the power supply voltage to 22V and connect to the circuit.
5. Set the signal generator output, sine wave of 20mV 1kHz is applied to input terminal
of circuit diagram.
6. By making input voltage as constant, vary the function generator frequency from 100
Hz to 1MHz (as per in the given tabular form) and note down the corresponding
output voltages.
7. Calculation the gain AV =Vo/Vi .
8. Plot the graph frequency Vs gain (dB) on a semi log sheet.
9. And finally calculate the maximum gain and bandwidth from graph.

PRECAUTIONS:
1. The continuity of wires and C.R.O. probes must be checked.
2. The voltages levels in the RPS must be kept in minimum position before switching it
“ON” or “OFF”.
3. The terminals of the transistor should be identified properly.
4. Readings should be taken without errors.
5. Interconnections should not be made on the bread board with power switched on.

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 Electronic Devices and Circuits Lab (R16)

OBSERVATIONS:

STATIC DRAIN CHARACTERISTICS:

VGS = 0 V VGS= -1V VGS = -2 V

S. No. VDD(v)
VDS(v) ID (mA) VDS (v) ID(mA) VDS (v) ID(mA)
1. 0
2. 1
3. 2
4. 3
5. 4
6. 5
7. 6
8. 7
9. 8
10. 9
11. 10

TRANSFER CHARACTERISTICS:

VDS = 2V VDS= 4V VDS = 6 V

S. No. VGG(v)
VGS(v) ID (mA) VGS (v) ID(mA) VGS (v) ID(mA)
1. 0
2. 0.1
3. 0.2
4. 0.3
5. 0.4
6. 0.5
7. 0.7
8. 1.0
9. 0.5
10. 2.0
11. 2.5

Dept.,of E.C.E,NSRIT,SONTYAM PAGE NO:

 Electronic Devices and Circuits Lab (R16)

MODEL WAVEFORMS:

RESULT:

VIVA QUESTION:
1.What are the advantages of FET?
2.What are Transfer Characteristics ?
3.what are the applications of FET ?

REMARKS:

SIGNATURE OF THE FACULTY:

Dept.,of E.C.E,NSRIT,SONTYAM PAGE NO: