BSP170P

SIPMOS Small-Signal-Transistor
®
Product Summary
Features
V DS -60 V
• P-Channel
R DS(on),max 0.3 Ω
• Enhancement mode
ID -1.9 A
• Avalanche rated

• dv /dt rated

• Pb-free lead plating; RoHS compliant PG-SOT223

• Qualified according to AEC Q101

• Halogen­free according to IEC61249­2­21

Type Package Tape and reel information Marking Lead free Packing
BSP170P PG-SOT223 H6327: 1000pcs/reel BSP170P Yes Non Dry

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

steady state

Continuous drain current ID T A=25 °C -1.9 A

T A=70 °C -1.5

Pulsed drain current I D,pulse T A=25 °C -7.6

Avalanche energy, single pulse E AS I D=1.9 A, R GS=25 Ω 70 mJ

Avalanche energy, periodic limited by

E AR 0.18
Tjmax

I D=1.9 A, V DS=48 V,
Reverse diode dv /dt dv /dt di /dt =-200 A/µs, -6 kV/µs
T j,max=150 °C

Gate source voltage V GS ±20 V

Power dissipation P tot T A=25 °C 1.8 W

Operating and storage temperature T j, T stg -55 ... 150 °C

ESD class JESD22-C101 (HBM) 1A (250V to 500V)

Soldering temperature 260 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Rev 2.53 page 1 2012-11-26

 BSP170P

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance,
R thJS - - 20 K/W
junction -soldering point

SMD version, device on PCB: R thJA minimal footprint - - 110 K/W

6 cm2 cooling area1) - - 70

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -2.1 -3 -4

V DS=-60 V, V GS=0 V,
Zero gate voltage drain current I DSS - -0.1 -1 µA
T j=25 °C

V DS=-60 V, V GS=0 V,
- -10 -100
T j=125 °C

Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA

Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1.9 A - 239 300 mΩ

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 1.3 2.6 - S
I D=-1.9 A

1)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air.

Rev 2.53 page 2 2012-11-26

 BSP170P

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 328 410 pF

V GS=0 V, V DS=-25 V,
Output capacitance C oss - 105 135
f =1 MHz
Reverse transfer capacitance C rss - 38 48

Turn-on delay time t d(on) - 14 21 ns

Rise time tr V DD=-30 V, V GS=- - 28 42

10 V, I D=-1.9 A,
Turn-off delay time t d(off) R G=6 Ω - 92 138

Fall time tf - 60 90

Gate Charge Characteristics

Gate to source charge Q gs - -1.4 -1.9 nC

Gate to drain charge Q gd V DD=-48 V, I D=-1.9 A, - -4.9 -7.4

Qg V GS=0 to -10 V
Gate charge total - -10 -14

Gate plateau voltage V plateau - -4.34 - V

Reverse Diode

Diode continuous forward current IS - - -1.98 A

T A=25 °C
Diode pulse current I S,pulse - - -7.6

V GS=0 V, I F=-1.9 A,
Diode forward voltage V SD - -0.83 -1.1 V
T j=25 °C

Reverse recovery time t rr - 36 54 ns

V R=30 V, I F=|I S|,
Q rr di F/dt =100 A/µs
Reverse recovery charge - 41 62 nC

Rev 2.53 page 3 2012-11-26

 BSP170P
1 Power dissipation 2 Drain current
P tot=f(T A) I D=f(T A); |V GS|≥10 V

2.1

1.8
1.8

1.5
1.5

1.2
1.2
P tot [W]

-I D [A]
0.9 0.9

0.6 0.6

0.3 0.3

0 0
0 40 80 120 160 0 40 80 120 160
T A [°C] T A [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p)

parameter: t p parameter: D =t p/T

101 10 µs 102

100 µs

limited by on-state 0.5

resistance 1 ms

10 ms
0.2

100 101
100 ms 0.1
Z thJS [K/W]
-I D [A]

0.05

0.02
DC

10-1 100 0.01

single pulse

10-2 10-1
0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 101 102
-V DS [V] t p [s]

Rev 2.53 page 4 2012-11-26

 BSP170P
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

7 1000

-7 V
-20 V 900
6 -6V
-10 V
-5.5 V 800

5 700
-4 V

600

R DS(on) [mΩ]
4
-I D [A]

-5 V -4.5 V
500

3 -5 V
400
-5.5 V

-6 V
2
-4.5 V 300 -7 V
-10 V
200 -20 V
1 -4V
100

0 0
0 1 2 3 4 5 0 1 2 3
-V DS [V] -I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

3 3.5

2.5
2

2
-I D [A]

g fs [S]

1.5

1
1

125 °C 0.5
25 °C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5
-V GS [V] -I D [A]

Rev 2.53 page 5 2012-11-26

 BSP170P
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA

600

550 5

500

450 max.
4
400
R DS(on) [mΩ]

98 %
350 typ.

-V GS(th) [V]
3
300

250 typ.

2
200 min.

150

100 1

50

0 0
-60 -20 20 60 100 140 -60 -20 20 60 100 140
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

103 101

150 °C, typ

25 °C, 98%

Ciss

100 150 °C, 98%

Coss
C [pF]

I F [A]

102

Crss
10-1

25 °C, typ

101 10-2
0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3
-V DS [V] -V SD [V]

Rev 2.53 page 6 2012-11-26

 BSP170P
13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed
parameter: T j(start) parameter: V DD

101 16

14

12

10 30 V
12 V
48 V
-I AV [A]

V GS [V]
0 25 °C
10 8
100 °C

125 °C
6

10-1 0
100 101 102 103 104 0 5 10 15
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=-250 µA

70

65
-V BR(DSS) [V]

60

55

50
-60 -20 20 60 100 140
T j [°C]

Rev 2.53 page 7 2012-11-26

 BSP170P

Package Outline

SOT-223: Outline

Footprint Packaging
Tape

Operating and storage temperature

Dimensions in mm

Rev 2.53 page 8 2012-11-26

 BSP170P

Rev 2.53 page 9 2012-11-26