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RJP30H2DPK-M0
Silicon N Channel IGBT R07DS0467EJ0200
Rev.2.00
High speed power switching Jun 15, 2011
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
High speed switching: tf = 100 ns typ, tf = 180 ns typ
Low leak current: ICES = 1 A max
Outline
1. Gate
2. Collector
G
3. Emitter
4. Collector (Flange)
1
2
3 E
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current ICES — — 1 A VCE = 360 V, VGE = 0
Gate to emitter leak current IGES — — ±100 nA VGE = ± 30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 2.5 — 5 V VCE = 10 V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat) — 1.4 1.9 V IC = 35 A, VGE = 15 V Note3
Input capacitance Cies — 1200 — pF VCE = 25 V
Output capacitance Coes — 60 — pF VGE = 0
Reveres transfer capacitance Cres — 30 — pF f = 1 MHz
Total gate charge Qg — 37 — nC VGE = 15 V
Gate to emitter charge Qge — 6 — nC VCE = 150 V
Gate to collector charge Qgc — 10 — nC IC = 35 A
Switching time td(on) — 0.02 — s IC = 35 A
tr — 0.1 — s RL = 4.5
td(off) — 0.06 — s VGE = 15 V
tf — 0.18 — s RG = 5
Main Characteristics
100 μs 80 8V
10 V
PW
15 V
=
10 60 6V
10
0μ
s
1 40
5.5 V
0.1 20
VGE = 5 V
Ta = 25°C
1 shot pulse
0.01 0
0.1 1 10 100 1000 0 1 2 3 4 5
Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)
160 8V 40
15 V
7V Tc = 75°C
120 30
25°C
–25°C
80 Ta = 25°C 20
Pulse Test 6V
40 10
VGE = 5 V
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V)
VCE(sat) (V)
Collector to Emitter Saturation Voltage
5 10
VGE = 15 V
Pulse Test
4
IC = 35 A
80 A
3 Tc = –25°C
120 A
1
2
25°C 75°C
1
Pulse Test
Ta = 25°C
0 0.1
0 4 8 12 16 20 1 10 100
Cies 300 12
1000
200 8
100
100 4
Coes
Cres VCE
10 0 0
0 20 40 60 80 100 0 8 16 24 32 40
tf tf
tr
100 100
td(off)
td(off)
tr td(on)
td(on)
10 10
1 10 100 1 10 100
tf
tr
100
td(off)
td(on)
10
0 25 50 75 100 125 150
D=1
1
0.5
0.3
0.2
0.1
0.1 θj−c(t) = γs (t) θj−c
0.05
θj−c = 2.08°C/W, Tc = 25°C
0.02
1 PDM PW
0.0
D=
se
0.03 T
ul
tp
PW
ho
T
1s
0.01
10 μ 100 μ 1m 10 m 100 m 1
Ic Monitor 90%
RL
Vin 10%
Vin Monitor
90% 90%
Rg VCC
D.U.T.
Ic 10%
Vin = 15 V 10%
td(on) td(off)
tr tf
ton toff
Package Dimension
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-3PSG ⎯ PRSS0004ZH-A TO-3PSG/TO-3PSGV 3.7g
Unit: mm
5.00 ± 0.3
15.60 ± 0.2
4.80 ± 0.2
13.60
0.60 ± 0.2
φ3.2 ± 0.2
3.8
18.70 ± 0.2
1.0
14.90 ± 0.1
0.50typ
3.50
2.0
2.4 1.40
20.0 ± 0.2
3-1.00 ± 0.2
1.50 ± 0.2
2.825 ± 0.15
Ordering Information
Orderable Part Number Quantity Shipping Container
RJP30H2DPK-M0-T2 360 pcs Box (Tube)