IRFP350

Data Sheet July 1999 File Number 2319.4

16A, 400V, 0.300 Ohm, N-Channel Features

Power MOSFET • 16A, 400V
This N-Channel enhancement mode silicon gate power field
• rDS(ON) = 0.300Ω
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of • Single Pulse Avalanche Energy Rated
energy in the breakdown avalanche mode of operation. All of • SOA is Power Dissipation Limited
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers, • Nanosecond Switching Speeds
relay drivers, and drivers for high power bipolar switching • Linear Transfer Characteristics
transistors requiring high speed and low gate drive power.
• High Input Impedance
These types can be operated directly from integrated
circuits. • Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Formerly developmental type TA17434.
Components to PC Boards”
Ordering Information Symbol
PART NUMBER PACKAGE BRAND
D
IRFP350 TO-247 IRFP350

NOTE: When ordering, include the entire part number.

G

Packaging
JEDEC STYLE TO-247
TOP VIEW

SOURCE
DRAIN
GATE

DRAIN
(FLANGE)

4-335 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
 IRFP350

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRFP350 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 400 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 400 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 16 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 10 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 64 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 180 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.44 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 700 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 400 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 16 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 8.9A (Figures 8, 9) - 0.250 0.300 Ω
Forward Transconductance (Note 2) gfs VDS = 2 x VGS, ID = 8.0A (Figure 12) 8.0 10 - S
Turn-On Delay Time tD(ON) VDD = 200V, ID = 16A, RGS = 6.2Ω, VGS = 10V, - 12 18 ns
RL = 12.3Ω
Rise Time tr - 51 77 ns
MOSFET Switching Times are Essentially
Turn-Off Delay Time tD(OFF) Independent of Operating Temperature - 75 110 ns
Fall Time tf - 47 71 ns
Total Gate Charge Qg VGS = 10V, ID = 16A, VDS = 0.8 x Rated BVDSS. - 87 130 nC
(Gate to Source + Gate to Drain) IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operating
Gate to Source Charge Qgs - 10 - nC
Temperature
Gate to Drain “Miller” Charge Qgd - 33 - nC
Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 2000 - pF
Output Capacitance COSS - 400 - pF
Reverse-Transfer Capacitance CRSS - 100 - pF
Internal Drain Inductance LD Measured Between the Modified MOSFET - 5.0 - nH
Contact Screw on Header Symbol Showing the
that is Closer to Source Internal Devices
and Gate Pins and Center Inductances
of Die D

Internal Source Inductance LS Measured from the LD - 12.5 - nH

Source Lead, 6mm
(0.25in) From Header to
G
Source Bonding Pad LS

Junction to Case RθJC - - 0.70 oC/W

Junction to Ambient RθJA Free Air Operation - - 30 oC/W

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 IRFP350

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET - - 16 A
D
Symbol Showing the
Pulse Source to Drain Current ISDM - - 64 A
Integral Reverse
(Note 3)
P-N Junction Diode
G

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 16A, VGS = 0V (Figure 13) - - 1.6 V
Reverse Recovery Time trr TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs 270 - 1300 ns
Reverse Recovered Charge QRR TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs 1.7 - 8.1 µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, starting TJ = 25oC, L = 5.66mH, RG = 50Ω, peak IAS = 15A.

Typical Performance Curves Unless Otherwise Specified

1.2 20
POWER DISSIPATION MULTIPLIER

1.0
16
ID , DRAIN CURRENT (A)

0.8
12

0.6
8
0.4

4
0.2

0 0
0 50 100 150 25 50 75 100 125 150
TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

1
ZθJC, NORMALIZED TRANSIENT

0.5
THERMAL IMPEDANCE

0.2
0.1 0.1
0.05 PDM

0.02
0.01
t1
10-2 t2 t2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC +TC
10-3
10-5 10-4 10-3 10-2 0.1 1 10
t1 , RECTANGULAR PULSE DURATION (S)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

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 IRFP350

Typical Performance Curves Unless Otherwise Specified (Continued)

103 25
OPERATION IN THIS
REGION IS LIMITED VGS = 6.0V
BY rDS(ON) VGS = 10V
PULSE DURATION = 80µs
20
ID, DRAIN CURRENT (A)

102 DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

10µs
100µs
15 VGS = 5.5V
10 1ms

10
10ms
VGS = 5.0V
1
5
TC = 25oC DC
VGS = 4.0V
TJ = MAX RATED VGS = 4.5V
SINGLE PULSE
0.1 0
1 10 102 103 0 40 80 120 160 200
VDS , DRAIN TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

25
PULSE DURATION = 80µs 102
VGS = 10V PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
VGS = 6.0V VDS = 2 x VGS
20
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

10
15 VGS = 5.5V

TJ = 150oC TJ = 25oC
10
VGS = 5.0V 1

5
VGS = 4.0V
VGS = 4.5V

0 0.1
0 2 4 6 8 10 0 2 4 6 8 10
VDS , DRAIN TO SOURCE VOLTAGE (V) VSD , GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

0.75 2.5
PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE

ID = 8.9A, VGS = 10V

rDS(ON), DRAIN TO SOURCE

0.60 2.0
ON RESISTANCE VOLTAGE
ON RESISTANCE

0.45 VGS = 10V 1.5

0.30 VGS = 20V 1.0

0.15 0.5

0 0
0 13 26 39 52 65 -60 -40 -20 0 20 40 60 80 100 120 140 160
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

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 IRFP350

Typical Performance Curves Unless Otherwise Specified (Continued)

1.25 5000
ID = 250µA VGS = 0V, f = 1MHz
CISS = CGS + CGD
NORMALIZED DRAIN TO SOURCE

CRSS = CGD
COSS ≈ CDS + CGS
1.15 4000
BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)
1.05 3000 CISS

0.95 2000
COSS

0.85 1000 CRSS

0.75 0
-60 -40 -20 0 20 40 60 80 100 120 140 160 1 2 5 10 2 5 102
TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

25 102
PULSE DURATION = 80µs PULSE DURATION = 80µs
ISD, SOURCE TO DRAIN CURRENT (A)
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
gfs, TRANSCONDUCTANCE (S)

VDS = 2 x VGS
20

TJ = 25oC
10
15

TJ = 150oC TJ = 25oC
10
TJ = 150oC 1

0 0.1
0 5 10 15 20 25 0 0.4 0.8 1.2 1.6 2.0
ID , DRAIN CURRENT (A) VSD , SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE

20
ID = 16A
VGS, GATE TO SOURCE VOLTAGE (V)

16

VDS = 80V
12
VDS = 200V

VDS = 320V
8

0
0 30 60 90 120 150
Qg , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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 IRFP350

Test Circuits and Waveforms

VDS
BVDSS

L tP
VDS

VARY tP TO OBTAIN IAS

+ VDD
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS
0
0.01Ω
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
RL VDS
90% 90%

+
VDD 10% 10%
RG 0
-
DUT 90%

VGS 50% 50%

PULSE WIDTH
VGS 10%
0

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
VDD

SAME TYPE Qg(TOT)

AS DUT VGS
12V
0.2µF 50kΩ Qgd
BATTERY
0.3µF
Qgs

D
VDS

G DUT
0

IG(REF) S
0
VDS IG(REF)
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR 0

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

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 IRFP350

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