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Precision Instrumentation Amplifier

Data Sheet AD524


FEATURES FUNCTIONAL BLOCK DIAGRAM
Low noise: 0.3 μV p-p at 0.1 Hz to 10 Hz
Low nonlinearity: 0.003% (G = 1) – INPUT 1 PROTECTION

High CMRR: 120 dB (G = 1000) 4.44kΩ AD524


G = 10 13
Low offset voltage: 50 μV 404Ω
G = 100 12
Low offset voltage drift: 0.5 μV/°C Vb 20kΩ
40Ω SENSE
Gain bandwidth product: 25 MHz G = 1000 11
20kΩ 20kΩ
Pin programmable gains of 1, 10, 100, 1000 RG1 16
OUTPUT
Input protection, power-on/power-off RG2 3
20kΩ 20kΩ
No external components required 20kΩ
REFERENCE
Internally compensated

00500-001
+ INPUT 2 PROTECTION
MIL-STD-883B and chips available
16-lead ceramic DIP and SOIC packages and 20-terminal Figure 1.
leadless chip carrier available
Available in tape and reel in accordance with EIA-481A
standard
Standard military drawing also available

GENERAL DESCRIPTION
The AD524 is a precision monolithic instrumentation amplifier PRODUCT HIGHLIGHTS
designed for data acquisition applications requiring high accu- 1. Guaranteed low offset voltage, low offset voltage drift, and
racy under worst-case operating conditions. An outstanding low noise for precision high gain applications.
combination of high linearity, high common-mode rejection, 2. Functionally complete with pin programmable gains of 1,
low offset voltage drift, and low noise makes the AD524 suitable 10, 100, and 1000, and single resistor-programmable for
for use in many data acquisition systems. The AD524 has an any gain.
output offset voltage drift of less than 25 μV/°C, input offset 3. Input and output offset nulling terminals are provided for
voltage drift of less than 0.5 μV/°C, CMR above 90 dB at unity high precision applications and to minimize offset voltage
gain (120 dB at G = 1000), and maximum nonlinearity of changes in gain ranging applications.
0.003% at G = 1. The gain bandwidth product of the AD524 is 4. Input protected for both power-on and power-off fault
25 kHz (G = 1000). The output slew rate of 5 V/μs and settling conditions.
time of 15 μs to 0.01% for gains of 1 to 100, makes it suitable for 5. Superior dynamic performance with a gain bandwidth
high speed data acquisition systems. product of 25 MHz, full power response of 75 kHz and a
As a complete amplifier, the AD524 does not require any external settling time of 15 μs to 0.01% of a 20 V step (G = 100).
components for fixed gains of 1, 10, 100, and 1000. For other
gain settings between 1 and 1000, only a single resistor is
required. The AD524 input is fully protected for both power-on
and power-off fault conditions. The AD524 is available in four
versions of accuracy and operating temperature range. The
economical A grade, the low drift B grade, and lower drift,
higher linearity C grade are specified from −25°C to +85°C. The
S grade guarantees performance to specification over the extended
temperature range −55°C to +125°C. The AD524 is available in a
16-lead ceramic DIP, 16-lead SBDIP, 16-lead SOIC wide
packages, and 20-terminal leadless chip carrier.

Rev. G Document Feedback


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AD524 Data Sheet

TABLE OF CONTENTS
Features .............................................................................................. 1 Input Offset and Output Offset ................................................ 15
Functional Block Diagram .............................................................. 1 Gain .............................................................................................. 16
General Description ......................................................................... 1 Input Bias Currents .................................................................... 17
Product Highlights ........................................................................... 1 Common-Mode Rejection ........................................................ 17
Revision History ............................................................................... 2 Grounding ................................................................................... 18
Specifications..................................................................................... 3 Sense Terminal............................................................................ 18
Absolute Maximum Ratings............................................................ 8 Reference Terminal .................................................................... 18
Connection Diagrams .................................................................. 8 Programmable Gain ................................................................... 20
ESD Caution .................................................................................. 8 Auto-Zero Circuits ..................................................................... 20
Typical Performance Characteristics ............................................. 9 Error Budget Analysis ................................................................ 21
Test Circuits ................................................................................. 14 References .................................................................................... 23
Theory of Operation ...................................................................... 15 Outline Dimensions ....................................................................... 24
Input Protection.......................................................................... 15 Ordering Guide .......................................................................... 25

REVISION HISTORY
1/2018—Rev. F to Rev. G
Changes to General Description .................................................... 1
Change to Output Offset Voltage vs. Temperature Parameter,
Unit Column, Table 1 ....................................................................... 3
Added References Section ............................................................. 23
Updated Outline Dimensions ....................................................... 24
Changes to Ordering Guide .......................................................... 25

11/2007—Rev. E to Rev. F
Updated Format .................................................................. Universal
Changes to General Description .................................................... 1
Changes to Figure 1 .......................................................................... 1
Changes to Figure 3 and Figure 4 Captions .................................. 8
Changes to Error Budget Analysis Section ................................. 21
Changes to Ordering Guide .......................................................... 25

4/1999—Rev. D to Rev. E

Rev. G | Page 2 of 25
Data Sheet AD524

SPECIFICATIONS
At VS = ±15 V, RL = 2 kΩ and TA = +25°C, unless otherwise noted.
All min and max specifications are guaranteed. Specifications shown in boldface are tested on all production units at the final electrical
test. Results from those tests are used to calculate outgoing quality levels.

Table 1.
AD524A AD524B
Parameter Min Typ Max Min Typ Max Unit
GAIN
Gain Equation (External Resistor Gain Programming)
 40 ,000   40 ,000 
 + 1 ± 20%  + 1 ± 20%
 RG   RG 
Gain Range (Pin Programmable) 1 to 1000 1 to 1000
Gain Error 1
G=1 ±0.05 ±0.03 %
G = 10 ±0.25 ±0.15 %
G = 100 ±0.5 ±0.35 %
G = 1000 ±2.0 ±1.0 %
Nonlinearity
G=1 ±0.01 ±0.005 %
G = 10, G = 100 ±0.01 ±0.005 %
G = 1000 ±0.01 ±0.01 %
Gain vs. Temperature
G=1 5 5 ppm/°C
G = 10 15 10 ppm/°C
G = 100 35 25 ppm/°C
G = 1000 100 50 ppm/°C
VOLTAGE OFFSET (May be Nulled)
Input Offset Voltage 250 100 µV
vs. Temperature 2 0.75 µV/°C
Output Offset Voltage 5 3 mV
vs. Temperature 100 50 µV/°C
Offset Referred to the Input vs. Supply
G=1 70 75 dB
G = 10 85 95 dB
G = 100 95 105 dB
G = 1000 100 110 dB
INPUT CURRENT
Input Bias Current ±50 ±25 nA
vs. Temperature ±100 ±100 pA/°C
Input Offset Current ±35 ±15 nA
vs. Temperature ±100 ±100 pA/°C

Rev. G | Page 3 of 25
AD524 Data Sheet
AD524A AD524B
Parameter Min Typ Max Min Typ Max Unit
INPUT
Input Impedance
Differential Resistance 109 109 Ω
Differential Capacitance 10 10 pF
Common-Mode Resistance 109 109 Ω
Common-Mode Capacitance 10 10 pF
Input Voltage Range
Maximum Differential Input Linear (VDL) 2 ±10 ±10 V
Maximum Common-Mode Linear (VCM)2 G  G  V
12 V −  × VD  12 V −  × VD 
 2   2 
Common-Mode Rejection DC to 60 Hz with 1 kΩ Source Imbalance V
G=1 70 75 dB
G = 10 90 95 dB
G = 100 100 105 dB
G = 1000 110 115 dB
OUTPUT RATING
VOUT, RL = 2 kΩ ±10 ±10 V
DYNAMIC RESPONSE
Small Signal – 3 dB
G=1 1 1 MHz
G = 10 400 400 kHz
G = 100 150 150 kHz
G = 1000 25 25 kHz
Slew Rate 5.0 5.0 V/µs
Settling Time to 0.01%, 20 V Step
G = 1 to 100 15 15 µs
G = 1000 75 75 µs
NOISE
Voltage Noise, 1 kHz
RTI 7 7 nV/√Hz
RTO 90 90 nV√Hz
RTI, 0.1 Hz to 10 Hz
G=1 15 15 µV p-p
G = 10 2 2 µV p-p
G = 100, 1000 0.3 0.3 µV p-p
Current Noise
0.1 Hz to 10 Hz 60 60 pA p-p
SENSE INPUT
RIN 20 20 kΩ ± 20%
IIN 15 15 µA
Voltage Range ±10 ±10 V
Gain to Output 1 1 %
REFERENCE INPUT
RIN 40 40 kΩ ± 20%
IIN 15 15 µA
Voltage Range ±10 ±10 V
Gain to Output 1 1 %

Rev. G | Page 4 of 25
Data Sheet AD524
AD524A AD524B
Parameter Min Typ Max Min Typ Max Unit
TEMPERATURE RANGE
Specified Performance –25 +85 –25 +85 °C
Storage –65 +150 –65 +150 °C
POWER SUPPLY
Power Supply Range ±6 ±15 ±18 ±6 ±15 ±18 V
Quiescent Current 3.5 5.0 3.5 5.0 mA
1
Does not include effects of external resistor, RG.
2
VOL is the maximum differential input voltage at G = 1 for specified nonlinearity.
VDL at the maximum = 10 V/G.
VD = actual differential input voltage.
Example: G = 10, VD = 0.50.
VCM = 12 V − (10/2 × 0.50 V) = 9.5 V.

At VS = ±15 V, RL = 2 kΩ and TA = +25°C, unless otherwise noted.


All min and max specifications are guaranteed. Specifications shown in boldface are tested on all production units at the final electrical
test. Results from those tests are used to calculate outgoing quality levels.

Table 2.
AD524C AD524S
Parameter Min Typ Max Min Typ Max Unit
GAIN
Gain Equation (External Resistor Gain Programming)
 40 ,000   40 ,000 
 + 1 ± 20%  + 1 ± 20%
 RG   RG 
Gain Range (Pin Programmable) 1 to 1000 1 to 1000
Gain Error 1
G=1 ±0.02 ±0.05 %
G = 10 ±0.1 ±0.25 %
G = 100 ±0.25 ±0.5 %
G = 1000 ±0.5 ±2.0 %
Nonlinearity
G=1 ±0.003 ±0.01 %
G = 10, G = 100 ±0.003 ±0.01 %
G = 1000 ±0.01 ±0.01 %
Gain vs. Temperature
G=1 5 5 ppm/°C
G = 10 10 10 ppm/°C
G = 100 25 25 ppm/°C
G = 1000 50 50 ppm/°C
VOLTAGE OFFSET (May be Nulled)
Input Offset Voltage 50 100 µV
vs. Temperature 0.5 2.0 µV/°C
Output Offset Voltage 2.0 3.0 mV
vs. Temperature 25 50 µV
Offset Referred to the Input vs. Supply
G=1 80 75 dB
G = 10 100 95 dB
G = 100 110 105 dB
G = 1000 115 110 dB

Rev. G | Page 5 of 25
AD524 Data Sheet
AD524C AD524S
Parameter Min Typ Max Min Typ Max Unit
INPUT CURRENT
Input Bias Current ±15 ±50 nA
vs. Temperature ±100 ±100 pA/°C
Input Offset Current ±10 ±35 nA
vs. Temperature ±100 ±100 pA/°C
INPUT
Input Impedance
Differential Resistance 109 109 Ω
Differential Capacitance 10 10 pF
Common-Mode Resistance 109 109 Ω
Common-Mode Capacitance 10 10 pF
Input Voltage Range
Maximum Differential Input Linear (VDL) 2 ±10 ±10 V
Maximum Common-Mode Linear (VCM)2 G  G  V
12 V −  × VD  12 V −  × VD 
2  2 
Common-Mode Rejection DC to 60 Hz with 1 kΩ Source Imbalance V
G=1 80 70 dB
G = 10 100 90 dB
G = 100 110 100 dB
G = 1000 120 110 dB
OUTPUT RATING
VOUT, RL = 2 kΩ ±10 ±10 V
DYNAMIC RESPONSE
Small Signal – 3 dB
G=1 1 1 MHz
G = 10 400 400 kHz
G = 100 150 150 kHz
G = 1000 25 25 kHz
Slew Rate 5.0 5.0 V/µs
Settling Time to 0.01%, 20 V Step
G = 1 to 100 15 15 µs
G = 1000 75 75 µs
NOISE
Voltage Noise, 1 kHz
RTI 7 7 nV/√Hz
RTO 90 90 nV√Hz
RTI, 0.1 Hz to 10 Hz
G=1 15 15 µV p-p
G = 10 2 2 µV p-p
G = 100, 1000 0.3 0.3 µV p-p
Current Noise
0.1 Hz to 10 Hz 60 60 pA p-p
SENSE INPUT
RIN 20 20 kΩ ± 20%
IIN 15 15 µA
Voltage Range ±10 ±10 V
Gain to Output 1 1 %

Rev. G | Page 6 of 25
Data Sheet AD524
AD524C AD524S
Parameter Min Typ Max Min Typ Max Unit
REFERENCE INPUT
RIN 40 40 kΩ ± 20%
IIN 15 15 µA
Voltage Range 10 10 V
Gain to Output 1 1 %
TEMPERATURE RANGE
Specified Performance –25 +85 –55 +85 °C
Storage –65 +150 –65 +150 °C
POWER SUPPLY
Power Supply Range ±6 ±15 ±18 ±6 ±15 ±18 V
Quiescent Current 3.5 5.0 3.5 5.0 mA
1
Does not include effects of external resistor RG.
2
VOL is the maximum differential input voltage at G = 1 for specified nonlinearity.
VDL at the maximum = 10 V/G.
VD = actual differential input voltage.
Example: G = 10, VD = 0.50.
VCM = 12 V − (10/2 × 0.50 V) = 9.5 V.

Rev. G | Page 7 of 25
AD524 Data Sheet

ABSOLUTE MAXIMUM RATINGS


CONNECTION DIAGRAMS
Table 3.
Parameter Rating – INPUT 1 16 RG1

Supply Voltage ±18 V + INPUT 2 15 OUTPUT NULL


RG2 3 14 OUTPUT NULL
Internal Power Dissipation 450 mW
Input Voltage1 INPUT NULL 4 AD524 G = 10 13 SHORT TO
TOP VIEW RG2 FOR
INPUT NULL 5 (Not to Scale) 12 G = 100
(Either Input Simultaneously) |VIN| + |VS| <36 V DESIRED
REFERENCE 6 11 G = 1000 GAIN
Output Short-Circuit Duration Indefinite
–VS 7 10 SENSE
Storage Temperature Range
+VS 8 9 OUTPUT
(R) –65°C to +125°C
(D, E) –65°C to +150°C 4 15
+VS –VS
Operating Temperature Range

00500-003
INPUT 5 14 OUTPUT
AD524A/AD524B/AD524C –25°C to +85°C OFFSET NULL OFFSET NULL
AD524S –55°C to +125°C Figure 3. Ceramic (D) and
Lead Temperature (Soldering, 60 sec) +300°C SOIC (RW-16 and D-16) Packages

1
Maximum input voltage specification refers to maximum voltage to which
either input terminal may be raised with or without device power applied.

OUTPUT
+INPUT
–INPUT
For example, with ±18 volt supplies maximum, VIN is ±18 V; with zero supply

NULL
RG1
voltage maximum, VIN is ±36 V.

NC
3 2 1 20 19
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a RG2 4 18 OUTPUT NULL
stress rating only; functional operation of the product at these INPUT NULL 5 17 G = 10
AD524 SHORT TO
NC 6 16 NC RG2 FOR
or any other conditions above those indicated in the operational TOP VIEW
DESIRED
INPUT NULL 7 (Not to Scale) 15 G = 100
section of this specification is not implied. Operation beyond REFERENCE 8 14 G = 1000
GAIN

the maximum operating conditions for extended periods may


affect product reliability. NC = NO CONNECT 9 10 11 12 13

OUTPUT
–VS
+VS

SENSE
NC
OUTPUT SENSE
NULL G = 10 G = 100 G = 1000 10
14 13 12 11
OUTPUT
NULL 9 7 19
15 OUTPUT +VS –VS

00500-004
INPUT 5 18 OUTPUT
RG1 16 8 +VS
OFFSET NULL OFFSET NULL

0.103 Figure 4. Leadless Chip Carrier (E)


–INPUT (2.61)
1
+INPUT
2 7 –VS ESD CAUTION
RG2
3
4 5 6
INPUT INPUT REFERENCE
NULL NULL
0.170 (4.33)
00500-002

PAD NUMBERS CORRESPOND TO PIN NUMBERS FOR


THE D-16 AND RW-16 16-LEAD CERAMIC PACKAGES.

Figure 2. Metallization Photograph


Contact factory for latest dimensions;
Dimensions shown in inches and (mm)

Rev. G | Page 8 of 25
Data Sheet AD524

TYPICAL PERFORMANCE CHARACTERISTICS


20 8

QUIESCENT CURRENT (mA)


15 6
INPUT VOLTAGE (±V)

10 4
+25°C

5 2

00500-005

00500-008
0 0
0 5 10 15 20 0 5 10 15 20
SUPPLY VOLTAGE (±V) SUPPLY VOLTAGE (±V)

Figure 5. Input Voltage Range vs. Supply Voltage, G = 1 Figure 8. Quiescent Current vs. Supply Voltage

20 16

14
OUTPUT VOLTAGE SWING (±V)

INPUT BIAS CURRENT (±nA)


15 12

10

10 8

5 4

2
00500-006

00500-009
0 0
0 5 10 15 20 0 5 10 15 20
SUPPLY VOLTAGE (±V) SUPPLY VOLTAGE (±V)

Figure 6. Output Voltage Swing vs. Supply Voltage Figure 9. Input Bias Current vs. Supply Voltage

30 40

30
OUTPUT VOLTAGE SWING (V p-p)

INPUT BIAS CURRENT (nA)

20
20
10

–10
10

–20

–30
00500-007

00500-010

0 –40
10 100 1k 10k –75 –25 25 75 125
LOAD RESISTANCE (Ω) TEMPERATURE (°C)

Figure 7. Output Voltage Swing vs. Load Resistance Figure 10. Input Bias Current vs. Temperature

Rev. G | Page 9 of 25
AD524 Data Sheet
16 –140
G = 1000
G = 100
14 –120
INPUT BIAS CURRENT (±nA)

12 G = 10
–100

10 G=1

CMRR (dB)
–80

8
–60
6
–40
4

–20

00500-014
2

00500-011
0 0
0 5 10 15 20 0 10 100 1k 10k 100k 1M 10M
INPUT VOLTAGE (±V) FREQUENCY (Hz)

Figure 11. Input Bias Current vs. Input Voltage Figure 14. CMRR vs. Frequency, RTI, Zero to 1000 Source Imbalance

30

FULL POWER RESPONSE (V p-p)


G = 1, 10, 100
ΔVOS FROM FINAL VALUE (µV)

1
20
2

4
10

BANDWIDTH LIMITED
6
00500-012

00500-015
G = 1000 G = 100 G = 10
0
0 1 2 3 4 5 6 7 8 1k 10k 100k 1M
WARM-UP TIME (Minutes) FREQUENCY (Hz)

Figure 12. Offset Voltage, RTI, Turn-On Drift Figure 15. Large Signal Frequency Response

10

8
1000
SLEW RATE (V/µs)
GAIN (V/V)

100 6

10
4

1 G = 1000

2
00500-013

00500-016

0 10 100 1k 10k 100k 1M 10M 0


1 10 100 1000
FREQUENCY (Hz) GAIN (V/V)

Figure 13. Gain vs. Frequency Figure 16. Slew Rate vs. Gain

Rev. G | Page 10 of 25
Data Sheet AD524
160 100k
+VS = 15V DC +

CURRENT NOISE SPECTRAL DENSITY (fA/ Hz)


POWER SUPPLY REJECTION RATIO (dB)

140 1V p-p SINEWAVE

120 10k
G=1
000
100
G=
100
80 G= 1k
10
60
G=
1
40 100

20

00500-017

00500-020
0
10 100 1k 10k 100k 0 1 10 100 1k 10k
FREQUENCY (Hz) FREQUENCY (Hz)

Figure 17. Positive PSRR vs. Frequency Figure 20. Input Current Noise vs. Frequency

0.1Hz TO 10Hz
160
–VS = –15V DC +
POWER SUPPLY REJECTION RATIO (dB)

140 1V p-p SINEWAVE 5mV 1s

120

G=1
100 000
G=
100
80
G=
10
60
G=
1
40

20
00500-018

00500-021
0
10 100 1k 10k 100k VERTICAL SCALE; 1 DIVISION = 5µV
FREQUENCY (Hz)

Figure 18. Negative PSRR vs. Frequency Figure 21. Low Frequency Noise, G = 1 (System Gain = 1000)

1000 0.1Hz TO 10Hz

10mV 1s

100 G=1
VOLT NSD (nV/ Hz)

G = 10

10
G = 100, 1000

G = 1000
1
00500-019

0.1
00500-022

1 10 100 1k 10k 100k


VERTICAL SCALE; 1 DIVISION = 0.1µV
FREQUENCY (Hz)

Figure 19. RTI Noise Spectral Density vs. Gain Figure 22. Low Frequency Noise, G = 1000 (System Gain = 100,000)

Rev. G | Page 11 of 25
AD524 Data Sheet

1mV 10V 10µs


–12 TO +12
1% 0.1% 0.01%
–8 TO +8

–4 TO +4

OUTPUT
STEP (V)

+4 TO –4

+8 TO –8
1% 0.1% 0.01%

00500-026
+12 TO –12

00500-023
0 5 10 15 20

SETTLING TIME (µs)

Figure 23. Settling Time, Gain = 1 Figure 26. Large Signal Pulse Response and Settling Time, Gain = 10

1mV 10V 10µs


–12 TO +12
0.1%
1% 0.01%
–8 TO +8

–4 TO +4

OUTPUT
STEP (V)

+4 TO –4

+8 TO –8
1% 0.01%
00500-024

+12 TO –12 0.1%

00500-027
0 5 10 15 20
SETTLING TIME (µs)

Figure 24. Large Signal Pulse Response and Settling Time, Gain =1 Figure 27. Settling Time, Gain = 100

1mV 10V 10µs


–12 TO +12
1% 0.1% 0.01%
–8 TO +8

–4 TO +4

OUTPUT
STEP (V)

+4 TO –4

+8 TO –8
1% 0.1% 0.01%
00500-028

+12 TO –12
00500-025

0 5 10 15 20
SETTLING TIME (µs)

Figure 25. Settling Time, Gain = 10 Figure 28. Large Signal Pulse Response and Settling Time, Gain = 100

Rev. G | Page 12 of 25
Data Sheet AD524

5mV 10V 20µs


–12 TO +12
1% 0.1% 0.01%
–8 TO +8

–4 TO +4

OUTPUT
STEP (V)

+4 TO –4

+8 TO –8
1% 0.1% 0.01%

00500-030
+12 TO –12

00500-029
0 10 20 30 40 50 60 70 80
SETTLING TIME (µs)

Figure 29. Settling Time, Gain = 1000 Figure 30. Large Signal Pulse Response and Settling Time, Gain = 1000

Rev. G | Page 13 of 25
AD524 Data Sheet
TEST CIRCUITS
10kΩ 1kΩ 10kΩ
0.01% 10T 0.1%
INPUT VOUT
20V p-p 100kΩ +VS
0.1%
1 –
RG1 8
16
G = 10
13 10
G = 100
11kΩ 1kΩ 100Ω
12 AD524 9
G = 1000
0.1% 0.1% 0.1% 11 6
RG2
3
7
2 +

00500-031
–VS

Figure 31. Settling Time Test Circuit

+VS

I1 VB I2
50µA 50µA

R52
A1 A2 20kΩ
+ + R53 SENSE
C3 C4 20kΩ

R57 A3 VO
CH2, 20kΩ
CH3, CH4 R56 R54
–IN Q1, Q3 20kΩ Q2, Q4 20kΩ R55
20kΩ
4.44kΩ REFERENCE
CH1
RG1 RG2 CH2, CH3,
404Ω CH4
G = 100 +IN
I3 40Ω I4
50µA G = 1000 50µA CH1

00500-032
–VS

Figure 32. Simplified Circuit of Amplifier; Gain is Defined as


((R56 + R57)/(RG)) +1; For a Gain of 1, RG is an Open Circuit

Rev. G | Page 14 of 25
Data Sheet AD524

THEORY OF OPERATION
The AD524 is a monolithic instrumentation amplifier based from excessive currents. Standard practice is to place series
on the classic 3-op amp circuit. The advantage of monolithic limiting resistors in each input, but to limit input current to
construction is the closely matched components that enhance below 5 mA with a full differential overload (36 V) requires
the performance of the input preamplifier. The preamplifier over 7kΩ of resistance, which adds 10 nV√Hz of noise. To
section develops the programmed gain by the use of feedback provide both input protection and low noise, a special series
concepts. The programmed gain is developed by varying the protection FET is used.
value of RG (smaller values increase the gain) while the feedback A unique FET design was used to provide a bidirectional
forces the collector currents (Q1, Q2, Q3, and Q4) to be constant, current limit, thereby protecting against both positive and
which impresses the input voltage across RG. negative overloads. Under nonoverload conditions, three
As RG is reduced to increase the programmed gain, the channels (CH2, CH3, CH4) act as a resistance (≈1 kΩ) in series
transconductance of the input preamplifier increases to the with the input as before. During an overload in the positive
transconductance of the input transistors. This has three direction, a fourth channel, CH1, acts as a small resistance
important advantages. First, this approach allows the circuit (≈3 kΩ) in series with the gate, which draws only the leakage
to achieve a very high open-loop gain of 3 × 108 at a programmed current, and the FET limits IDSS. When the FET enhances under
gain of 1000, thus reducing gain-related errors to a negligible a negative overload, the gate current must go through the small
30 ppm. Second, the gain bandwidth product, which is deter- FET formed by CH1 and when this FET goes into saturation,
mined by C3 or C4 and the input transconductance, reaches the gate current is limited and the main FET goes into controlled
25 MHz. Third, the input voltage noise reduces to a value enhancement. The bidirectional limiting holds the maximum
determined by the collector current of the input transistors input current to 3 mA over the 36 V range.
for an RTI noise of 7 nV/√Hz at G = 1000.
INPUT OFFSET AND OUTPUT OFFSET
INPUT PROTECTION Voltage offset specifications are often considered a figure of
As interface amplifiers for data acquisition systems, instru- merit for instrumentation amplifiers. While initial offset may
mentation amplifiers are often subjected to input overloads, be adjusted to zero, shifts in offset voltage due to temperature
that is, voltage levels in excess of the full scale for the selected variations causes errors. Intelligent systems can often correct
gain range. At low gains (10 or less), the gain resistor acts as a this factor with an auto-zero cycle, but there are many small-
current limiting element in series with the inputs. At high gains, signal high-gain applications that do not have this capability.
the lower value of RG does not adequately protect the inputs

+VS
1 –
8
16 AD712
10 +Vs
13 10
100 16.2kΩ
12 AD524 9 3 + 8 1µF
1000 6 1/2 1 5 +
11
RG2 2 – 1/2 7
3 1µF 9.09kΩ
7 6 – 4
2 + 1µF 16.2kΩ
G = 1, 10, 100
–VS G = 1000 –VS
1kΩ
100Ω
1.62MΩ 1.82kΩ
00500-033

Figure 33. Noise Test Circuit

Rev. G | Page 15 of 25
AD524 Data Sheet
Voltage offset and drift comprise two components each; input The AD524 can be configured for gains other than those that
and output offset and offset drift. Input offset is the component are internally preset; there are two methods to do this. The first
of offset that is directly proportional to gain, that is, input offset method uses just an external resistor connected between
as measured at the output at G = 100 is 100 times greater than at Pin 3 and Pin 16 (see Figure 35), which programs the gain
G = 1. Output offset is independent of gain. At low gains, output according to the following formula:
offset drift is dominant, at high gains, input offset drift dominates. 40 kΩ
Therefore, the output offset voltage drift is normally specified as RG =
G = −1
drift at G = 1 (where input effects are insignificant), whereas
input offset voltage drift is given by drift specification at a high For best results, RG should be a precision resistor with a low
gain (where output offset effects are negligible). All input temperature coefficient. An external RG affects both gain
related numbers are referred to the input (RTI) that is the effect accuracy and gain drift due to the mismatch between it and
on the output is G times larger. Voltage offset vs. power supply the internal thin-film resistors. Gain accuracy is determined
is also specified at one or more gain settings and is also RTI. by the tolerance of the external RG and the absolute accuracy
of the internal resistors (±20%). Gain drift is determined by the
By separating these errors, one can evaluate the total error
mismatch of the temperature coefficient of RG and the tempera-
independent of the gain setting used. In a given gain configura-
ture coefficient of the internal resistors (−50 ppm/°C typical).
tion, both errors can be combined to give a total error referred +VS
to the input (RTI) or output (RTO) by the following formulas:
–INPUT 1
8
Total error RTI = input error + (output error/gain) RG1 16
13
1.5kΩ
Total error RTO = (gain × input error) + output error 2.105kΩ 12 AD524
10
9 VOUT
6
1kΩ
As an illustration, a typical AD524 might have a +250 µV
11
RG2 3 REFERENCE
7
output offset and a −50 µV input offset. In a unity gain +INPUT 2

00500-035
40,000
configuration, the total output offset would be 200 µV or –VS
G=
2.105
+ 1 = 20 ±20%

the sum of the two. At a gain of 100, the output offset would
Figure 35. Operating Connections for G = 20
be −4.75 mV or: +250 µV + 100(−50 µV) = −4.75 mV.
The second method uses the internal resistors in parallel with
The AD524 provides for both input and output offset adjustment.
an external resistor (see Figure 36). This technique minimizes
This simplifies very high precision applications and minimizes
the gain adjustment range and reduces the effects of tempera-
offset voltage changes in switched gain applications. In such
ture coefficient sensitivity.
applications, the input offset is adjusted first at the highest
+VS
programmed gain, then the output offset is adjusted at G = 1.
–INPUT 1

GAIN
8
RG1 16
G = 10 13
The AD524 has internal high accuracy pretrimmed resistors 4kΩ 12 AD524
10
9 VOUT
for pin programmable gains of 1, 10, 100, and 1000. One of the 11
6

preset gains can be selected by pin strapping the appropriate RG2 3


7
REFERENCE

gain terminal and RG2 together (for G = 1, RG2 is not connected). +INPUT 2
40,000
G= + 1 = 20 ±17%
*R|G = 10 = 4444.44Ω –VS 4000||4444.44
+VS INPUT *R|G = 100 = 404.04Ω

00500-036
OFFSET
NULL *R|G = 1000 = 40.04Ω
*NOMINAL (±20%)
8
–INPUT 1 10kΩ
4 Figure 36. Operating Connections for G = 20, Low Gain
RG1 16
Temperature Coefficient Technique
G = 10 13 5
10
G = 100 12 AD524 6
9 VOUT
G = 1000 11
RG2 3 7 OUTPUT
SIGNAL
00500-034

+INPUT 2
COMMON
–VS

Figure 34. Operating Connections for G = 100

Rev. G | Page 16 of 25
Data Sheet AD524
The AD524 can also be configured to provide gain in the output +VS

stage. Figure 37 shows an H pad attenuator connected 2 + 8


3
to the reference and sense lines of the AD524. R1, R2, and R3 11 10
should be made as low as possible to minimize the gain variation 12 AD524 9
13 6
and reduction of CMRR. Varying R2 precisely sets the gain 16
7 LOAD
without affecting CMRR. CMRR is determined by the match 1 –
of R1 and R3. –VS
TO POWER

00500-040
SUPPLY
+VS GROUND
R1
–INPUT 1 2.26kΩ Figure 40. Indirect Ground Returns for Bias Currents–AC-Coupled
8
RG1 16

G = 10 13
10
R2
5kΩ
Although instrumentation amplifiers have differential inputs,
G = 100 12 AD524 9 VOUT there must be a return path for the bias currents. If this is not
6
G = 1000 11 RL
RG2 3
provided, those currents charge stray capacitances, causing the
7 R3
+INPUT 2 2.26kΩ output to drift uncontrollably or to saturate. Therefore, when

00500-037
G=
(R2||40kΩ) + R1 + R3 –VS amplifying floating input sources such as transformers and
(R2||40kΩ) (R1 + R2 + R3)||RL ≥ 2kΩ
thermocouples, as well as ac-coupled sources, there must still
Figure 37. Gain of 2000 be a dc path from each input to ground.
Table 4. Output Gain Resistor Values COMMON-MODE REJECTION
Output Gain R2 R1, R3 Nominal Gain
Common-mode rejection is a measure of the change in output
2 5 kΩ 2.26 kΩ 2.02
voltage when both inputs are changed equal amounts. These
5 1.05 kΩ 2.05 kΩ 5.01 specifications are usually given for a full-range input voltage
10 1 kΩ 4.42 kΩ 10.1 change and a specified source imbalance. Common-mode
rejection ratio (CMRR) is a ratio expression whereas common-
INPUT BIAS CURRENTS
mode rejection (CMR) is the logarithm of that ratio. For
Input bias currents are those currents necessary to bias the example, a CMRR of 10,000 corresponds to a CMR of 80 dB.
input transistors of a dc amplifier. Bias currents are an
additional source of input error and must be considered in In an instrumentation amplifier, ac common-mode rejection is
a total error budget. The bias currents, when multiplied by only as good as the differential phase shift. Degradation of ac
the source resistance, appear as an offset voltage. What is of common-mode rejection is caused by unequal drops across
concern in calculating bias current errors is the change in bias differing track resistances and a differential phase shift due
current with respect to signal voltage and temperature. Input to varied stray capacitances or cable capacitances. In many
offset current is the difference between the two input bias applications, shielded cables are used to minimize noise. This
currents. The effect of offset current is an input offset voltage technique can create common-mode rejection errors unless the
whose magnitude is the offset current times the source shield is properly driven. Figure 41 and Figure 42 show active
impedance imbalance. data guards that are configured to improve ac common-mode
rejection by bootstrapping the capacitances of the input cabling,
+VS
thus minimizing differential phase shift.
2 +
3
8 +VS
–INPUT
11 10 1 –
12 AD524 9 8

13 6 G = 100
12 10
16 100Ω
7
LOAD RG2 AD524 9 VOUT
1 – 3 6

–VS
AD711
+INPUT 7 REFERENCE
TO POWER +
00500-038

2
00500-041

SUPPLY
GROUND –VS
Figure 38. Indirect Ground Returns for Bias Currents—Transformer Coupled Figure 41. Shield Driver, G ≥ 100
+VS
+VS
–INPUT
2 + 1 –
8 AD712 RG1 8
3 100Ω 16
11 10
10
12 AD524 9
13 6
12 AD524 9 VOUT
16 6
7 –VS
LOAD
1 – 100Ω RG2
3
7
REFERENCE
+
00500-042

–VS 2
TO POWER +INPUT
00500-039

SUPPLY –VS
GROUND
Figure 42. Differential Shield Driver
Figure 39. Indirect Ground Returns for Bias Currents—Thermocouple
Rev. G | Page 17 of 25
AD524 Data Sheet
GROUNDING Typically, IC instrumentation amplifiers are rated for a full
Many data acquisition components have two or more ground ±10 volt output swing into 2 kΩ. In some applications, however,
pins that are not connected together within the device. These the need exists to drive more current into heavier loads.
grounds must be tied together at one point, usually at the system Figure 44 shows how a high current booster may be connected
power-supply ground. Ideally, a single solid ground would be inside the loop of an instrumentation amplifier to provide the
desirable. However, because current flows through the ground required current boost without significantly degrading overall
wires and etch stripes of the circuit cards, and because these performance. Nonlinearities and offset and gain inaccuracies of
paths have resistance and inductance, hundreds of millivolts can the buffer are minimized by the loop gain of the AD524 output
be generated between the system ground point and the data amplifier. Offset drift of the buffer is similarly reduced.
acquisition components. Separate ground returns should be REFERENCE TERMINAL
provided to minimize the current flow in the path from the The reference terminal can be used to offset the output by up to
sensitive points to the system ground point. In this way, supply ±10 V. This is useful when the load is floating or does not share
currents and logic-gate return currents are not summed into the a ground with the rest of the system. It also provides a direct
same return path as analog signals where they would cause means of injecting a precise offset. It must be remembered that
measurement errors. the total output swing is ±10 V to be shared between signal and
Because the output voltage is developed with respect to the reference offset.
potential on the reference terminal, an instrumentation When the AD524 is of the 3-amplifier configuration it
amplifier can solve many grounding problems. is necessary that nearly zero impedance be presented to the
ANALOG P.S. DIGITAL P.S. reference terminal.
+15V C –15V C +5V
Any significant resistance from the reference terminal to
ground increases the gain of the noninverting signal path,
0.1 0.1 0.1 0.1 thereby upsetting the common-mode rejection of the AD524.
µF µF 1µF 1µF 1µF
µF µF
In the AD524, a reference source resistance unbalances the CMR
8 DIG
COM
trim by the ratio of 20 kΩ/RREF. For example, if the reference
7
source impedance is 1 Ω, CMR is reduced to 86 dB (20 kΩ/1 Ω
2 7 9 11 15 1
10
AD524 9 AD583 DIGITAL
1
SAMPLE AD574A DATA
OUTPUT
= 86 dB). An operational amplifier can be used to provide that
AND HOLD
6
low impedance reference point, as shown in Figure 45. The
OUTPUT
ANALOG
SIGNAL
input offset voltage characteristics of that amplifier adds directly
GROUND*
REFERENCE GROUND to the output offset voltage performance of the instrumentation
00500-043

*IF INDEPENDENT; OTHERWISE, RETURN AMPLIFIER REFERENCE


TO MECCA AT ANALOG P.S. COMMON. amplifier.
+VS
Figure 43. Basic Grounding Practice
SENSE
SENSE TERMINAL VIN+ 2 8

3 10
The sense terminal is the feedback point for the instrument AD524 9

amplifier’s output amplifier. Normally, it is connected to the 12 6


REF LOAD
VIN– 7
instrument amplifier output. If heavy load currents are to be
1

drawn through long leads, voltage drops due to current flowing –VS
00500-045

through lead resistance can cause errors. The sense terminal can AD711 VOFFSET

be wired to the instrument amplifier at the load, thus putting Figure 45. Use of Reference Terminal to Provide Output Offset
the IxR drops inside the loop and virtually eliminating this
error source. An instrumentation amplifier can be turned into a voltage-
V+ to-current converter by taking advantage of the sense and
(SENSE)
OUTPUT reference terminals, as shown in Figure 46.
VIN+ 2 8 CURRENT
BOOSTER
3 10 SENSE
+INPUT 2 + 10
AD524 9 X1
12 6 3 R1
RL AD524 9 IL
VIN– 1
7 (REF) VX
13
00500-044

6
V–
–INPUT 1 –
REF
A2
Figure 44. AD524 Instrumentation Amplifier with Output Current Booster
AD711
LOAD
00500-046

VX VIN 40,000
IL =
R1
=
R1
= 1+( RG
)
Figure 46. Voltage-to-Current Converter

Rev. G | Page 18 of 25
Data Sheet AD524
By establishing a reference at the low side of a current setting the forced current, IL, largely flows through the load. Offset and
resistor, an output current may be defined as a function of input drift specifications of A2 must be added to the output offset and
voltage, gain, and the value of that resistor. Because only a small drift specifications of the AD524.
current is demanded at the input of the buffer amplifier (A2)

–IN 1 PROTECTION 16
OUTPUT G = 10 G = 100 G = 1000
OFFSET K1 K2 K3
+IN 2 PROTECTION 15 TRIM
R2 NC
+VS 10kΩ
3 14
INPUT
OFFSET 4.44kΩ
4 13
TRIM R1 RELAY
10kΩ 20kΩ 20kΩ 404Ω SHIELDS
5 12
20kΩ 20kΩ
20kΩ 40Ω
6 11

20kΩ +5V
–VS 7 10
A1 K1 D1 K2 D2 K3 D3
AD524 OUT
+VS 8 9

1µF C1 C2
35V
INPUTS A 1 16 1 16
K1 – K3 = GAIN
ANALOG THERMOSEN DM2C Y0
COMMON RANGE B 2 15 2
4.5V COIL Y1
D1 – D3 = IN4148 3 3
74LS138 14 Y2 7407N
DECODER BUFFER
4 13 4
GAIN TABLE DRIVER
5 5
10µF
A B GAIN
0 0 10 +5V 6 6
0 1 1000
1 0 100 7 7
1 1 1

00500-047
LOGIC
NC = NO CONNECT COMMON

Figure 47. Three-Decade Gain Programmable Amplifier

Rev. G | Page 19 of 25
AD524 Data Sheet
PROGRAMMABLE GAIN +INPUT PROTECTION
(–INPUT) 1
Figure 47 shows the AD524 being used as a software program- 4.44kΩ
G = 10 13 AD524
mable gain amplifier. Gain switching can be accomplished with 404Ω
G = 100 12 Vb
mechanical switches such as DIP switches or reed relays. It should 40Ω
20kΩ
10
G = 1000 11
be noted that the on resistance of the switch in series with the 20kΩ 20kΩ
RG1 16
internal gain resistor becomes part of the gain equation and has RG2 3
9 VOUT
20kΩ 20kΩ
an effect on gain accuracy. 6
20kΩ
The AD524 can also be connected for gain in the output stage. –INPUT 2 PROTECTION
(+INPUT)
Figure 48 shows an AD711 used as an active attenuator in the
output amplifier’s feedback loop. The active attenuation presents +VS
1/2
17 3 AD712
very low impedance to the feedback resistors, therefore 2
minimizing the common-mode rejection ratio degradation.
4 DAC A
DATA 14 DB0
INPUTS 7 DB7 256:1
(+INPUT) 1
CS 15
–IN 1 PROTECTION 16
OUTPUT
AD7528
WR 16
(–INPUT) OFFSET 19
+IN 2 PROTECTION 15 NULL DAC A/DAC B 6
TO –V 20
+VS 18 DAC B
3 14 R2
10kΩ 1/2
INPUT 5 AD712
OFFSET 4.44kΩ

00500-049
4 13
NULL
10kΩ 20kΩ 20kΩ 404Ω
5 12

20kΩ 20kΩ 20kΩ Figure 49. Programmable Output Gain Using a DAC
40Ω
6 11

–VS 7
+ – 20kΩ
10
Another method for developing the switching scheme is to
AD524 use a DAC. The AD7528 dual DAC, which acts essentially as
+VS 8 9 VOUT
a pair of switched resistive attenuators having high analog
1µF
35V 20kΩ linearity and symmetrical bipolar transmission, is ideal in this
10pF
VSS VDD GND
application. The multiplying DAC’s advantage is that it can
+VS
handle inputs of either polarity or zero without affecting the
1 8 16

– 15 2
programmed gain. The circuit shown uses an AD7528 to set
39.2kΩ 1kΩ
+ 13 14 the gain (DAC A) and to perform a fine adjustment (DAC B).
AD711 28.7kΩ 1kΩ
AUTO-ZERO CIRCUITS
11 12
–VS 316kΩ 1kΩ
9 10

AD7590 In many applications, it is necessary to provide very accurate


3 4 5 6 7
data in high gain configurations. At room temperature, the
00500-048

VDD A2 A3 A4 WR offset effects can be nulled by the use of offset trim potenti-
Figure 48. Programmable Output Gain ometers. Over the operating temperature range, however,
offset nulling becomes a problem. The circuit of Figure 50
shows a CMOS DAC operating in bipolar mode and connected
to the reference terminal to provide software controllable offset
adjustments.

Rev. G | Page 20 of 25
Data Sheet AD524
+VS +VS
+INPUT 2 + 8
+10V
8
RG1 16 10kΩ
G = 10 13 10 350Ω 350Ω
2 + 4
RG1 16
G = 100 12 AD524 9
13
5
10 14-BIT
6 G = 100 ADC
G = 1000 11 12 AD524C 9
350Ω 350Ω 0V TO 2V
RG2 3
7 11 6 F.S.
–INPUT 1 – RG2 3

–VS
1 – 7
39kΩ VREF
–VS
R3 –VS
AD589 +VS R5

00500-052
20kΩ
20kΩ
15 14 16 C1
MSB +VS Figure 52. Typical Bridge Application
4 1/2
DATA OUT1 R4
INPUTS LSB 1 2 – 8 10kΩ AD712
11 AD7524
OUT2
1 6 – ERROR BUDGET ANALYSIS
CS 12 2 3 + 7

13
1/2 5 + 4 To illustrate how instrumentation amplifier specifications are
WR AD712 R6
3 5kΩ applied, review a typical case where an AD524 is required to
–VS

00500-050
amplify the output of an unbalanced transducer. Figure 52
GND
shows a differential transducer, unbalanced by 100 Ω, supplying
Figure 50. Software Controllable Offset
a 0 mV to 20 mV signal to an AD524C. The output of the IA
In many applications, complex software algorithms for auto- feeds a 14-bit ADC with a 0 V to 2 V input voltage range. The
zero applications are not available. For those applications, operating temperature range is −25°C to +85°C. Therefore, the
Figure 51 provides a hardware solution. largest change in temperature, ΔT, within the operating range is
+VS from ambient to +85°C (85°C − 25°C = 60°C).
+
2
15 16 RG1 16
8 In many applications, differential linearity and resolution are of
14
13 10
VOUT prime importance in cases where the absolute value of a variable is
12 AD524 9 less important than changes in value. In these applications, only
13 11
9 10
RG2 6 0.1µF LOW CH the irreducible errors (45 ppm = 0.004%) are significant. Further-
3 LEAKAGE
7
1
– more, if a system has an intelligent processor monitoring the
1kΩ
–VS – analog-to-digital output, the addition of an autogain/auto-zero
12 11
AD711
+ cycle removes all reducible errors and may eliminate the require-
ment for initial calibration. This also reduces errors to 0.004%.
VDD 8

VSS 1 AD7510KD
GND 2

A1 A2 A3 A4
200µs
00500-051

ZERO PULSE

Figure 51. Auto-Zero Circuit

Rev. G | Page 21 of 25
AD524 Data Sheet
Table 5. Error Budget Analysis
Effect on Effect on
Absolute Absolute Effect
AD524C Accuracy Accuracy on
Error Source Specifications Calculation at TA = 25°C at TA = 85°C Resolution
Gain Error ±0.25% ±0.25% = 2500 ppm 2500 ppm 2500 ppm –
Gain Instability 25 ppm (25 ppm/°C)(60°C) = 1500 ppm – 1500 ppm –
Gain Nonlinearity ±0.003% ±0.003% = 30 ppm – – 30 ppm
Input Offset Voltage ±50 µV, RTI ±50 µV/20 mV = ±2500 ppm 2500 ppm 2500 ppm –
Input Offset Voltage Drift ±0.5 µV/°C (±0.5 µV/°C)(60°C) = 30 µV – 1500 ppm –
– 30 µV/20 mV = 1500 ppm
Output Offset Voltage 1 ±2.0 mV ±2.0 mV/20 mV = 1000 ppm 1000 ppm 1000 ppm –
Output Offset Voltage Drift1 ±25 µV/°C (±25 µV/°C)(60°C)= 1500 µV – 750 ppm –
1500 µV/20 mV = 750 ppm
Bias Current-Source ±15 nA (±15 nA)(100 Ω ) = 1.5 µV 75 ppm 75 ppm –
Imbalance Error 1.5 µV/20 mV = 75 ppm
Bias Current-Source ±100 pA/°C (±100 pA/°C)(100 Ω )(60°C) = 0.6 µV – 30 ppm –
Imbalance Drift 0.6 µV/20 mV = 30 ppm
Offset Current-Source ±10 nA (±10 nA)(100 Ω ) = 1 µV 50 ppm 50 ppm –
Imbalance Error 1 µV/20 mV = 50 ppm
Offset Current-Source ±100 pA/°C (100 pA/°C)(100 Ω )(60°C) = 0.6 µV – 30 ppm –
Imbalance Drift 0.6 µV/20 mV = 30 ppm
Offset Current-Source ±10 nA (10 nA)(175 Ω ) = 3.5 µV 87.5 ppm 87.5 ppm –
Resistance-Error 3.5 µV/20 mV = 87.5 ppm
Offset Current-Source ±100 pA/°C (100 pA/°C)(175 Ω )(60°C) = 1 µV – 50 ppm –
Resistance-Drift 1 µV/20 mV = 50 ppm
Common Mode Rejection 5 V DC 115 dB 115 dB = 1.8 ppm × 5 V = 8.8 µV 444 ppm 444 ppm –
8.8 µV/20 mV = 444 ppm
Noise, RTI (0.1 Hz to 10 Hz) 0.3 µV p-p 0.3 µV p-p/20 mV = 15 ppm – – 15 ppm
Total Error 6656.5 ppm 10516.5 ppm 45 ppm
1
Output offset voltage and output offset voltage drift are given as RTI figures.

Rev. G | Page 22 of 25
Data Sheet AD524
Figure 53 shows a simple application in which the variation of ambient temperature, the equation in Figure 53 may be
of the cold junction voltage of a Type J thermocouple-iron ± solved for the optimum values of RT and RA.
constantan is compensated for by a voltage developed in series The microprocessor controlled data acquisition system shown
by the temperature sensitive output current of an AD590 in Figure 54 includes both auto-zero and autogain capability. By
semiconductor temperature sensor. dedicating two of the differential inputs, one to ground and one
RA
NOMINAL REFERENCE to the A/D reference, the proper program calibration cycles can
JUNCTION +VS
TYPE VALUE 7.5V
+15°C < TA < +35°C eliminate both initial accuracy errors and accuracy errors over
J 52.3Ω
IA 2.5V temperature. The auto-zero cycle, in this application, converts a
K 41.2Ω TA
AD580
E 61.4Ω number that appears to be ground and then writes that same
G = 100
T 40.2Ω VA AD590
+VS
S, R 5.76Ω
AD524
number (8-bit) to the AD7524, which eliminates the zero error.
+
IRON
RA Because its output has an inverted scale, the autogain cycle
EO
VT CONSTANTAN CU 52.3Ω converts the A/D reference and compares it with full-scale. A

MEASURING 8.66kΩ
multiplicative correction factor is then computed and applied to
JUNCTION 52.3ΩI A + 2.5V –VS
EO = VT – VA + – 2.5V
1+
52.3Ω RT
OUTPUT subsequent readings.
R 1kΩ AMPLIFIER
~
= VT OR METER
REFERENCES

00500-053
NOMINAL VALUE
9135Ω The following reference materials provide additional
Figure 53. Cold Junction Compensation information that supplements material found in the data sheet.
The circuit is calibrated by adjusting RT for proper output A Designer’s Guide to Instrumentation Amplifiers, 3RD Edition,
voltage with the measuring junction at a known reference 2006. Analog Devices.
temperature and the circuit near 25°C. If resistors with low
Application Note, AN-306, Synchronous System Measures μΩs,
temperature coefficients are used, compensation accuracy is
Analog Devices.
to within ±0.5°C, for temperatures between +15°C and +35°C.
Other thermocouple types may be accommodated with the
standard resistance values shown in Table 5. For other ranges

2 + AD583 VREF
RG2 16
13 10
AD7507 12 AD524 9 VIN AD574A
11 6
AGND
RG1 3
1 –
–VREF
A0, A2, 20kΩ
EN, A1 20kΩ

10kΩ –
– AD7524
+
+ 1/2
1/2 AD712
5kΩ
AD712
LATCH DECODE

CONTROL
MICRO-
PROCESSOR
00500-054

ADDRESS BUS

Figure 54. Microprocessor Controlled Data Acquisition System

Rev. G | Page 23 of 25
AD524 Data Sheet

OUTLINE DIMENSIONS
0.005 (0.13) MIN 0.080 (2.03) MAX

16 9
0.310 (7.87)
PIN 1 0.220 (5.59)
1 8 0.320 (8.13)
0.840 (21.34) MAX 0.290 (7.37)
0.200 (5.08) 0.060 (1.52)
MAX 0.015 (0.38)

0.150
(3.81)
0.200 (5.08) MIN
0.125 (3.18) 0.015 (0.38)
0.100 0.070 (1.78) SEATING
(2.54) 0.030 (0.76) PLANE 0.008 (0.20)
0.023 (0.58) BSC
0.014 (0.36)

CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS


(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

Figure 55. 16-Lead Side-Brazed Ceramic Dual In-Line [SBDIP]


(D-16)
Dimensions shown in inches and (millimeters)

0.049 (1.24)
0.075 (1.91) 0.200 (5.08)
0.041 (1.04) REF REF
0.100 (2.54) 0.100 (2.54) REF
0.064 (1.63) 0.095 (2.41) 0.015 (0.38)
0.075 (1.90) 19 3 MIN
20
18 4
0.358 (9.09) 0.011 (0.28) 1 0.028 (0.71)
0.358
0.342 (8.69) (9.09) 0.007 (0.18) 0.022 (0.56)
BOTTOM VIEW
SQ MAX R TYP
SQ 0.050 (1.27)
14 8 BSC
0.075 (1.91)
REF 13 9
SIDE VIEW 45° TYP
0.088 (2.24) 0.055 (1.40) 0.150 (3.81)
0.054 (1.37) 0.045 (1.14) BSC

12-05-2017-B
PKG-000045

CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS


(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUI VALENTS FOR
REFERENCE ON LY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

Figure 56. 20-Terminal Ceramic Leadless Chip Carrier [LCC]


(E-20)
Dimensions shown in inches and (millimeters)

10.50 (0.4134)
10.10 (0.3976)

16 9
7.60 (0.2992)
7.40 (0.2913)

1 10.65 (0.4193)
8
10.00 (0.3937)

1.27 (0.0500) 0.75 (0.0295)


BSC 45°
2.65 (0.1043) 0.25 (0.0098)
0.30 (0.0118) 2.35 (0.0925)

0.10 (0.0039) 0°
COPLANARITY
0.10 0.51 (0.0201) SEATING 1.27 (0.0500)
PLANE 0.33 (0.0130)
0.31 (0.0122) 0.20 (0.0079) 0.40 (0.0157)

COMPLIANT TO JEDEC STANDARDS MS-013- AA


CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
032707-B

(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR


REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

Figure 57. 16-Lead Standard Small Outline Package [SOIC_W]


Wide Body (RW-16)
Dimensions shown in millimeters and (inches)

Rev. G | Page 24 of 25
Data Sheet AD524
ORDERING GUIDE
Model 1, 2 Temperature Range Package Description Package Option
AD524AD −40°C to +85°C 16-Lead SBDIP D-16
AD524ADZ −40°C to +85°C 16-Lead SBDIP D-16
AD524AR-16 −40°C to +85°C 16-Lead SOIC_W RW-16
AD524ARZ-16 −40°C to +85°C 16-Lead SOIC_W RW-16
AD524ARZ-16-REEL7 −40°C to +85°C 16-Lead SOIC_W, 7”Tape and Reel RW-16
AD524BD −40°C to +85°C 16-Lead SBDIP D-16
AD524BDZ −40°C to +85°C 16-Lead SBDIP D-16
AD524BE −40°C to +85°C 20-Terminal LCC E-20
AD524CD −40°C to +85°C 16-Lead SBDIP D-16
AD524CDZ −40°C to +85°C 16-Lead SBDIP D-16
AD524SD −55°C to +125°C 16-Lead SBDIP D-16
AD524SD/883B −55°C to +125°C 16-Lead SBDIP D-16
5962-8853901EA −55°C to +125°C 16-Lead SBDIP D-16
AD524SE/883B −55°C to +125°C 20-Terminal LCC E-20
AD524SCHIPS −55°C to +125°C Die
1
Z = RoHS Compliant Part.
2
Refer to the official DESC drawing for tested specifications of the 5962-8853901EA model.

©1983–2018 Analog Devices, Inc. All rights reserved. Trademarks and


registered trademarks are the property of their respective owners.
D00500-0-1/18(G)

Rev. G | Page 25 of 25

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