FDS86106 N-Channel Power Trench® MOSFET

July 2011

FDS86106
N-Channel Power Trench® MOSFET
100 V, 3.4 A, 105 mΩ
Features General Description
„ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild
„ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A Semiconductor‘s advanced Power Trench® process that has
„ High performance trench technology for extremely low rDS(on) been optimized for rDS(on), switching performance and
ruggedness.
„ High power and current handling capability in a widely used
surface mount package Applications
„ 100% UIL Tested „ Synchronous Rectifier
„ RoHS Compliant „ Primary Switch For Bridge Topology

D
D 4 G
D 5
D
D D 6 3 S

D 7 2 S
G
SO-8
S D 8 1 S
S
Pin 1 S

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 100 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous 3.4
ID A
-Pulsed 15
EAS Single Pulse Avalanche Energy (Note 3) 13 mJ
Power Dissipation TA = 25 °C (Note 1a) 5.0
PD W
Power Dissipation TA = 25 °C (Note 1b) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Note 1) 2.5
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDS86106 FDS86106 SO-8 13 ’’ 12 mm 2500 units

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDS86106 Rev. C2
 FDS86106 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, referenced to 25 °C 67 mV/°C
ΔTJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2 2.9 4 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 250 μA, referenced to 25 °C -9 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 3.4 A 83 105
rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 2.7 A 115 171 mΩ
VGS = 10 V, ID = 3.4 A, TJ = 125 °C 143 177
gFS Forward Transconductance VDS = 10 V, ID = 3.4 A 6 S

Dynamic Characteristics
Ciss Input Capacitance 156 208 pF
VDS = 50 V, VGS = 0 V,
Coss Output Capacitance 47 62 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 2 3 pF
Rg Gate Resistance 0.9 Ω

Switching Characteristics
td(on) Turn-On Delay Time 5 10 ns
tr Rise Time VDD = 50 V, ID = 3.4 A, 2 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 8 15 ns
tf Fall Time 2 10 ns
Total Gate Charge VGS = 0 V to 10 V 3 4 nC
Qg(TOT)
Total Gate Charge VGS = 0 V to 5 V VDD = 50 V 1.6 2.3 nC
Qgs Total Gate Charge ID = 3.4 A 0.8 nC
Qgd Gate to Drain “Miller” Charge 0.8 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 3.4 A (Note 2) 0.86 1.3
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 2.1 A (Note 2) 0.83 1.2
trr Reverse Recovery Time 34 54 ns
IF = 3.4 A, di/dt = 100 A/μs
Qrr Reverse Recovery Charge 22 35 nC

NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a) 50 °C/W when mounted on a b) 125 °C/W when mounted on a

1 in2 pad of 2 oz copper. minimum pad.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDS86106 Rev. C2
 FDS86106 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
15 5

DRAIN TO SOURCE ON-RESISTANCE

VGS = 10 V VGS = 5 V VGS = 5.5 V
VGS = 7 V
12 4
ID, DRAIN CURRENT (A)

VGS = 6 V VGS = 6 V

NORMALIZED
9 3
VGS = 5.5 V
VGS = 7 V
6 2
VGS = 5 V

3 1
PULSE DURATION = 80 μs VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
0 0
0 1 2 3 4 5 0 3 6 9 12 15
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

2.0 500
ID = 3.4 A
DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80 μs

SOURCE ON-RESISTANCE (mΩ)

1.8 VGS = 10 V DUTY CYCLE = 0.5% MAX
400
1.6
rDS(on), DRAIN TO ID = 3.4 A
NORMALIZED

1.4 300

1.2 TJ = 125 oC
200
1.0
100
0.8 TJ = 25 oC

0.6 0
-75 -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

15 20
PULSE DURATION = 80 μs
IS, REVERSE DRAIN CURRENT (A)

10 VGS = 0 V
DUTY CYCLE = 0.5% MAX
12
ID, DRAIN CURRENT (A)

VDS = 5 V TJ = 150 oC
1
9
TJ = 25 oC
0.1
6
TJ = 25 oC
TJ = 150 oC
3 0.01 TJ = -55 oC

TJ = -55 oC
0 0.001
2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDS86106 Rev. C2
 FDS86106 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10 300
ID = 3.4 A
VGS, GATE TO SOURCE VOLTAGE (V)

VDD = 50 V
Ciss
8 100
VDD = 25 V

CAPACITANCE (pF)
VDD = 75 V
6 Coss

4 10
Crss
f = 1 MHz
2 VGS = 0 V

0 1
0 1 2 3 4 0.1 1 10 100
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

4
4
IAS, AVALANCHE CURRENT (A)

3
TJ = 25 oC ID, DRAIN CURRENT (A) 3
TJ = 100 oC
2 VGS = 10 V
2
TJ = 125 oC

VGS = 6 V
1
o
RθJA = 50 C/W
1
0.001 0.01 0.1 1 2 0
25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) o
TA, Ambient TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Ambient Temperature

30 400
THIS AREA IS
P(PK), PEAK TRANSIENT POWER (W)

10 LIMITED BY rDS(on)
100
ID, DRAIN CURRENT (A)

100us

1
1 ms
10
10 ms
SINGLE PULSE
0.1 TJ = MAX RATED 100 ms
SINGLE PULSE
RθJA = 125 oC/W 1s RθJA = 125 oC/W
TA = 25 oC 10 s TA = 25 oC
1
DC
0.01 0.5 -4
0.01 0.1 1 10 100 600 10 10
-3 -2
10
-1
10 1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2011 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDS86106 Rev. C2
 FDS86106 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

1
DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJA

0.1 0.1
0.05
0.02 PDM
0.01

0.01 t1
t2
SINGLE PULSE NOTES:
o
RθJA = 125 C/W DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA

0.001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

©2011 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDS86106 Rev. C2
 FDS86106 N-Channel Power Trench® MOSFET
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Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I55

©2011 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDS86106 Rev. C2
Mouser Electronics

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FDS86106