CEP3120/CEB3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 40A,RDS(ON) = 15mΩ @VGS = 10V.

RDS(ON) = 22mΩ @VGS = 4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D

Lead free product is acquired.

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 40 A
a
Drain Current-Pulsed IDM 160 A
Maximum Power Dissipation @ TC = 25 C 43 W
PD
- Derate above 25 C 0.29 W/ C
Operating and Store Temperature Range TJ,Tstg -55 to 175 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 3.5 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W

Rev 1. 2006.Sep
Details are subject to change without notice . http://www.cetsemi.com
1
 CEP3120/CEB3120
Electrical Characteristics TA = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 µA
5
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics c
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 1 3 V
Static Drain-Source VGS = 10V, ID = 40A 11 15 mΩ
RDS(on)
On-Resistance VGS = 4.5V, ID =32A 17 22 mΩ
Dynamic Characteristics d
Input Capacitance Ciss 955 pF
VDS = 15V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 155 pF
Reverse Transfer Capacitance Crss 75 pF
Switching Characteristics d
Turn-On Delay Time td(on) 13 26 ns
Turn-On Rise Time tr VDD = 15V, ID = 10A, 3.4 6.8 ns
VGS = 10V, RGEN = 0.3Ω
Turn-Off Delay Time td(off) 30 60 ns
Turn-Off Fall Time tf 6.8 13.6 ns
Total Gate Charge Qg 13.1 17.4 nC
VDS = 15V, ID = 40A,
Gate-Source Charge Qgs VGS = 10V 2.7 nC
Gate-Drain Charge Qgd 1 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b IS 40 A
Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 40A 1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.

2
 CEP3120/CEB3120
40 75
VGS=10,8,6V

32 VGS=4V 60
ID, Drain Current (A)

ID, Drain Current (A)

45
24
5
16 30
25 C

8 15
TJ=125 C -55 C
VGS=3V
0 0
0 1 2 3 4 0 1 2 3 4

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

1260 2.2
ID=40A
RDS(ON), On-Resistance(Ohms)

VGS=10V
1050 Ciss 1.9
C, Capacitance (pF)

RDS(ON), Normalized

840 1.6

630 1.3

420 1.0

Coss
210 0.7
Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS
Gate-Source Threshold Voltage

VGS=0V
IS, Source-drain current (A)

1.2 ID=250µA

2
VTH, Normalized

1.1 10

1.0

0.9
1
10
0.8

0.7

0
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

3
 CEP3120/CEB3120
3
10 10
VGS, Gate to Source Voltage (V)

VDS=15V
ID=40A RDS(ON)Limit
8

ID, Drain Current (A)

2 100µs
10
6 1ms

10ms
4
1 DC
10

2 TC=25 C
6
TJ=175 C
Single Pulse
0 0
10 -1 0 1 2
0 3 6 9 12 15 10 10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2

-1 0.1 PDM
10
t1
0.05 t2

0.02 1. RθJC (t)=r (t) * RθJC

0.01 2. RθJC=See Datasheet
Single Pulse 3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve