SUBJECT CODE/NAME: 16EEC12 / ELECTRONIC DEVICES AND CIRCUITS

UNIT-I
PN JUNCTION DEVICES
PART – A (2 MARKS)

1. What is meant by dynamic resistance of diode?

Dynamic resistance of a diode can be defined as the ratio of change in voltage across the
diode to the change in current through the diode.
r=V/I
Where
r - Dynamic resistance of a diode
V - Change in voltage across the diode
I - change in current through the diode
2. Differentiate between zener breakdown and avalanche breakdown
Zener Breakdown takes place when both sides of the junction are very heavily doped and
consequently the depletion layer is think When a small reverse bias voltage is applied a very
strong electric field is set up across the thin depletion layer. This electric field is enough to break
the covalent bonds. So the large number of free charge carriers are produced which constitute the
zener current. The process is known as zener breakdown. Whereas the Avalanche breakdown
occurs when both sides of the junction are very lightly doped and consequently the depletion
layer is thin.
3. What is meant by diffusion current in a semi conductor?
A concentration gradient exists if the number of either electrons or holes is greater in one
region of a semiconductor as compared to the rest of the region. In a semiconductor material
the charge carriers have the tendency to move from the region of higher concentration to that
of lower concentration of same type of charge carriers. Thus, the movement of charge earners
takes place resulting in a current called diffusion current.
4. Define Knee voltage of a diode.
The forward voltage, at which the current through the junction starts increasing rapidly, is
called the knee voltage or cut-in voltage. It is generally 0.6v for a diode
5. What is peak inverse voltage?
Peak reverse voltage or peak inverse voltage is the maximum voltage that a diode can
withstand in the reverse direction without breaking down or avalanching. If this voltage is
exceeded the diode may be destroyed.
6. What is diffusion current in PN Junction diode?
A concentration gradient exists if the number of either electrons or holes is greater in one
region of a semiconductor as compared to the rest of the region. In a semiconductor material the
charge carriers have the tendency to move from the region of higher concentration to that of
lower concentration of same type of charge carriers. Thus, the movement of charge earners takes
place resulting in a current called diffusion current.
7. What is LED? Which material is used for LED?
A LED is basically a PN junction device which converts input electrical energy into output
optical radiation in the visible or infrared portion of the spectrum, depending on the fabrication
material. It emits light by a phenomenon called electroluminescence.
i) Gallium phosphide
ii) Gallium Arsenide
iii) Gallium Arsenide Phosphide
8. Give the equation for diode current under reverse bias.
The diode current equation relating the voltage V and current I is given by

I – diode current
Io – diode reverse saturation current at room temperature
V – External voltage applied to the diode
Ƞ - a constant, 1 for Ge and 2 for Si
VT = kT/q = T/11600, thermal voltage
K – Boltzmann’s constant (1.38066x10^-23 J/K)
q – charge of electron (1.6x10^-19 C)
T – temperature of the diode junction
9. Distinguish between Zener breakdown and Avalanche breakdown.
Avalanche breakdown occurs in lightly-doped PN-junctions where the depletion region is
comparatively long. The doping density controls the breakdown voltage. The temperature
coefficient of the avalanche mechanism is positive. That is, as the temperature increases, so does
the reverse breakdown voltage. The magnitude of the temperature coefficient also increases with
increasing breakdown voltage. For example, the temperature coefficient of a 8.2 V diode is in
the range 3 - 6 mV/K while the temperature coefficient of an 18 V diode is in the range of 12 -
18 mV/K.
Zener breakdown occurs in heavily doped PN-junctions. The heavy doping makes the
depletion layer extremely thin. So thin, in fact, carriers can’t accelerate enough to cause impact
ionization. With the depletion layer so thin, however, quantum mechanical tunneling through the
layer occurs causing current to flow. The temperature coefficient of the Zener mechanism is
negative the breakdown voltage for a particular diode decreases with increasing temperature.
However, the temperature coefficient is essentially independent of the rated breakdown voltage,
and of the order of -3 mV/K.
10. What is diffusion capacitance?
The capacitance that exists in a forward bias junction is called a diffusion (or) storage
capacitance (Cp) whose value is usually much larger than Cr, which exists in reverse based
junction. This also defined as the rate of change of injected charge with applied voltage
Cp = (dQ/dW),
where
dQ -» represents the change in the number of minority carriers stored outside the
depletion region when a change in voltage across the diode, dv is applied.
11. Define peak inverse voltage in a diode.
Peak reverse voltage or peak inverse voltage is the maximum voltage that a diode can
withstand in the reverse direction without breaking down or avalanching. If this voltage is
exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is
higher than the maximum voltage that will be applied to them in a given application.
12. What is meant by doping in a semiconductor?
The process of adding some impurities to the pure conductor is called as doping.
13. What is depletion region in PN junction?
The region around the junction from which the mobile charge carriers ( electrons and
holes) are depleted is called as depletion region. since this region has immobile ions, which are
electrically charged , the depletion region is also known as space charge region.
14. What is barrier potential?
Because of the oppositely charged ions present on both sides of PN junction an electric
Potential is established across the junction even without any external voltage source which is
termed as barrier potential.
15. Write the application of PN diode.
It can be used as rectifier in DC Power Supplies.
In Demodulation or Detector Circuits.
In clamping networks used as DC Restorers
In clipping circuits diode used for waveform generation.
It acts as switches in digital logic circuits.
16. What is recovery time? Give its types.
When a diode has its state changed from one type of bias to other a transient accompanies
the diode response, i.e., the diode reaches steady state only after an interval of time “ t r” called as
recovery time. The recovery time can be divided in to two types such as
(i) forward recovery time
(ii) reverse recovery time
17. State the principle of operation of an LED.
When a free electron from the higher energy level gets recombined with the hole, it gives
the light output. Here in case of LEDs, the supply of higher level electrons is provided by the
battery connection.
18. Give the advantages of LED
1. They are small in size
2. Light in weight
3. Mechanically rugged
4. Low operating temperature
5. Low cost
6. Linearity is better
7. Switch on time is very small
19. What is the effect of Temperature on PN Junction diode?
The rise in temperature increases the generation of electron hole pairs in semiconductors
and increase their conductivity. As a result, the current through the PN junction diode increases
with temperature as given by the diode current equation
Effect of Temperature on the diode characteristics is given by,

20. What is meant by diffusion?

The N-type material has high concentration of free electron, while P-type material has
high concentration of holes. Therefore at the junction there is a tendency for the free electron to
diffuse over the p-side and hole to the N-side. This process is called as diffusion.
21. What is the static resistance of a diode?
Static resistance R of a diode can be defined as the ratio of voltage V across the diode to
the current flowing through the diode.
R = V/ I
Where
R - Static resistance of a diode
V - Voltage across the diode
I - current across the diode
22. Why contact differences of potential exist in PN junction?
When a PN junction is formed by placing a p-type and n-type material in intimate
contact, the Fermi level throughout the newly formed specimen is not constant at equilibrium.
There will be transfer of electron and energy until Fermi levels in the two sides did line up. But
the valence and conduction band in p side cannot be at the same level as in n side .this shift in
energy level results in contact difference of potential.
23. What is forward bias and reverse bias in a PN junction?
When positive terminal of the external supply is connected to P region and negative
terminal to N region, the PN junction is said to be forward biased. Under forward biased
condition the PN region offers a very low resistance and a large amount of current flows through
it.
24. What is reverse bias in a PN junction?
When positive terminal of the external supply is connected to N type and negative
terminal to P type then the PN junction is said to be in reverse bias. Under reverse biased
condition the PN region offers a very high resistance and a small amount of current flows
through it.
 PART B (16 MARKS)
1. Draw the circuit diagram and explain the operation of full wave rectifier using center tap
transformer and using bridge rectifier without center tap transformer.
(i) Dc output voltage
(ii) dc output current
(iii) RMS output voltage.
2. With neat diagram explain the construction and working of LED.
3. Explain the working of LCD seven segment displays using square wave supply.
4. With a neat diagram explain the working of a PN junction diode in forward bias and reverse
bias and show the effect of temperature on its V-I characteristics.
5. Explain V-I characteristics of Zener diode.
6. Draw the output voltage waveform of a half wave rectifier and then show the effect on this
waveform by connecting a capacitor across the load resistance.
7. Draw and explain the bridge rectifier circuits with waveforms.
8. (i)Explain the working of a Zener diode as a Regulator.
(ii)Discuss the working principle, characteristics and applications of LED in detail.
9. Discuss the following: (i) Transition capacitance (ii) Diffusion capacitance.
10. Explain the VI characteristics of PN diode and the current components of it.
 UNIT II
TRANSISTORS
PART A (2 Marks)

1. Draw the input and output characteristics of a transistor in CE configuration and mark
the cutoff, saturation and active regions.

2. State the advantages of optocoupler.

1) An optocoupler (or an optoelectronic coupler) is basically an interface between two
circuits which operate at different voltage levels. The key advantage of an optocoupler is the
electrical isolation between the input and output circuits.
2) They can replace relays and reed relays, giving much faster switching speeds, no contact
bounce, better reliability, and usually better electrical isolation except for special configurations.
However relays have high current capability, higher output voltage, lower on resistance and
offset voltage and higher off resistance.
3) They can replace pulse transformers in many floating applications. Opto-isolators can
transmit DC signal components and low frequency AC, whereas pulse transformers couple only
the high frequency components, and a latch is required to restore the DC information. Pulse
transformers have faster rise time than phototransistor optocouplers.
3. Name the operating modes of a transistor.
Active region
Cut-off region
Saturation region
Active Region: It is defined in which transistor function is biased in reverse direction and
emitter function in forward direction.
Cutoff Region: The region in which the collector and emitter functions are both reverse biased.
Saturation Region: The region in which both the collector and emitter functions are forward
biased.

4. Which of the BJT configuration is suitable for impedance matching applications? Why?
The common emitter configuration produces the highest current and power gain of all the
three bipolar transistor configurations. This is mainly because the input impedance is LOW as it
is connected to a forward biased PN-junction, while the output impedance is HIGH as it is taken
from a reverse biased PN-junction.
5. What is meant by thermal run away?
The continuous increase in collector current due to poor-biasing causes the temperature at
collector terminal to increase. If no stabilization i.e., done, the collector leakage current also
increases. This further increases the temperature. This action becomes cumulative and. ultimately
the transistor turns out. The self-destruction of an unstabilised transistor is known as thermal
runaway.
6. Why is it necessary to stabilize the operating point of transistor?
In order to keep the transistor operation in Active region, it is necessary to stabilize the
transistor. If not, the transistor may go out of active region. (Saturation or cut off region).
7. Derive the relationship between α and β.
8. Draw and explain input and output characteristics of a transistor CB configuration

9. List the comparison between CB, CE, CC amplifiers.

10. State the biasing conditions required for the three regions of operation of a BJT.
Two external voltage sources are used to establish the required bias conditions for active-
mode operation. The voltage VBE causes the p-type base to be higher in potential than the n-type
emitter, thus forward-biasing the emitter–base junction. The collector–base voltage VCB causes
the n-type collector to be higher in potential than the p-type base, thus reverse-biasing the
collector–base junction.

11. What is pinch off voltage?

It is the voltage at which the channel is pinched off, (i.e) all the free charges from the channel
get removed.
12. Give any two differences between E-MOSFET and D-MOSFET.
In E-MOSFET has no conducting channel between two terminal, source terminal and gate
terminal. Whereas in the D-MOSFET has conducting channel between these two terminal,
source and gate.
13. Compare JFET with BJT.
S.NO JFET BJT
1. Unipolar device Bipolar device
2. High input impedance Low input impedance due to
forward bias
3. Voltage driven device Current driven device
4. Gain is characterized by trans Gain is characterized by
conductance gain Voltge.
5. Low noise level High noise level
14. Define amplification factor in JFET.
It is the product of drain résistance and trans conductance µ=Rd x gm
Rd=Drain resistance, gm=Trans conductance
15. What are the special features of FET?
* Input impedance is very high. This allows high degree of Isolation between the input &
output Circuit.
*Current carriers are not crossing the junctions hence noise is highly reduced.
* It has a negative temperature Co-efficient of resistance. This avoids the thermal
runaway.
16. Define: (a) Pinch off voltage and (b) Amplification factor in JFET.
It is the voltage at which the channel is pinched off, (i.e) all the free charges from the
channel get removed.
Amplification factor is the product of drain résistance and trans conductance µ=Rd x gm
Rd=Drain resistance, gm=Trans conductance
17. Why FET is called unipolar device?
The operation of FET depends upon the flow of majority carriers only either hour or
electrons and hence FET is said to be unipolar device.
18. Define Rd, gm and μ of JFET.
The change in the drain source voltage due to change in drain current with constant VGS
can be determined using the drain resistance rd.
VDS=rd ID.
The change in the drain current due to change in gate to source voltage can be
determined using the trans conductance factor gm.
Id=gm VGS.
19. What do you understand by pinch off voltages and cutoff voltages? Give the application
of FETs and their applications.
It is the voltage at which the channel is pinched off, (i.e) all the free charges from the
channel get removed.
20. List the important features of FET.
* Input impedance is very high. This allows high degree of Isolation between the input &
output Circuit. Current carriers are not crossing the junctions hence noise is highly reduced.
* It has a negative temperature Co-efficient of resistance. This avoids the thermal
runaway.
PART B (16 Marks)
1. Explain the construction and working of UJT. And Draw the characteristics.
2. Discuss the different modes of operation of thyristor with the help of static VI characteristics.
3. Explain the construction of SCR with neat sketch.
4. With the help of neat diagram explain the operation of BJT.
5. Describe the static input and output characteristics of a CB transistor with neat circuit
diagram.
6. Draw and explain the input and Output characteristics of a BJT in CE configuration.
7. (i)What are the factors against which an amplifier needs to be stabilized?
(ii)Explain any one method of biasing a single stage BJT amplifier.
8. Explain the construction and working of enhanced MOSFET and depletion MOSFET. Draw
the characteristics
9. Explain how the transconductance of a JFET varies with drain current and gate voltage
characteristics and transfer characteristics.
10. Explain the construction and working of IGBT. Draw the characteristics.
 UNIT III
AMPLIFIERS
PART A (2 Marks)
1. Draw the h-parameter equivalent circuit of a CE BJT configuration.

2. What are hybrid parameters?

The dimensions of the hybrid parameters are not alike, that is they are hybrid in nature so
they are called hybrid parameters.
h11 = [V1/I1] at V2=0; h11 = Input impedance with output port short circuited.
h12 = [V1/V2] at I1=0; h12 = Reverse voltage gain with input port open circuited.
h21 = [I2/I1] at V2=0; h11 = Forward current gain with output port short circuited.
h22 = [I2/V2] at I1=0; h11 = output impedance with input port open circuited.

3. Draw the high frequency model of JFET.

4. Why are common emitter amplifiers more popular?

i) Easy to manufacture
ii) Cheaper cost.
5. Draw the small signal equivalent circuit of FET

6. Define Miller's theorem.

For any inverting amplifier, the input capacitance will be increased by a miller effect
capacitance, sensitive to the gain of the amplifier and the inter electrode capacitance connected
between the input and output terminals of the active device.
CMi = (1-Av)Cf ; CMo=Cf
Cf = Inter electrode capacitance between input and output.
7. Define Bandwidth
Band width of an amplifier is defined as the difference between f1 and f2. Here f2 is in
the high frequency region and f1 is in the low frequency region. These two frequencies are also
referred to as the half power frequencies.
8. What do you mean by amplifier rise time?
Amplifier rise time is the time taken by a signal to change from a specified low value to a
specified high value. Typically, in analog electronics, these values are 10% and 90% of the step
height.
9. Define the frequency response of Amplifier?
The frequency response of an amplifier can be defined as the variation of output of
quantity with respect to input signal frequency. In otherwise it can be defined as a graph
drawn between the input frequency and the gain of an amplifier.
10. Define lower & upper cut off frequencies of an amplifier.
Lower cut-off frequency
The frequency (on lower side) at which the voltage gain of the amplifier is exactly 70.0%
of the maximum gain is known as lower cut off frequency.
Upper cut-off frequency
The frequency (on higher side) at which the voltage gain of the amplifier is exactly
70.0% of the maximum gain is known as upper cut off frequency.
11. Give the significance of the coupling and bypass capacitor on bandwidth of amplifiers?
At high and medium frequencies the coupling capacitors behave as short circuits. A t low
frequency the circuit gain is reduced. As the signal frequency decreases the capacitor reactance
increase and circuit gain continues to fall, reducing the output voltage.
12. Define small signal equivalent circuit?
The analysis of a non-linear device is complx.signal that takes up a relatively small
percentage of an amplifier’s operational range. With small input singles the transistor can be
replaced with small signal linear model. This Model is also called small signal equivalent model.
13. Write the input impedance, output impedance, voltage gain and current gain of the
common emitter amplifier in terms of h parameters for the fixed bias condition
Current gain Ai = -hfe
Voltage gain Av = (hfeRC)/hie
Input Impedance Zi = hie
Output Impedance Zo = RL ||RC
14. What are the salient features of hybrid parameters?
The salient features of hybrid parameters are,
a. h parameters are real numbers,
b. They are easy to measure.
c. They are convenient to use in circuit analysis and design
d. Easily convertible from one configuration to other
e. Readily supplied by manufactures.
15. Which amplifier is called as voltage follower? Why?
The common collector transistor amplifier configuration is called as voltage follower.
Since it has unity voltage gain and because of its very high input impedance. It doesn’t draw any
input current from the signal. So, the input signal is coupled to the output circuit without making
any distortion.
16. Draw a CC amplifier & its hybrid equivalent circuit .

17. What is an amplifier?

An amplifier is a circuit, which can be used to increase the amplitude of the input current
or voltage at the output by means of energy drawn from an external source.

PART- B (16 MARKS)

1. For a common emitter circuit draw the h-parameter equivalent circuit and write the
expressions for input impedance, output impedance and voltage gain.
2. Draw the h-parameter equivalent circuit of a transistor in CB configuration
3. Describe the methods of determination of h-parameters from its static Input and output
characteristics.
4. Derive the expression for current gain, input impedance and voltage gain of a CC Transistor
Amplifier.
5. Draw the Hybrid model of CE configuration and also derive the expressions for its Input and
Output Impedances, current and voltage gain.
6. For the CC transistor amplifier circuit, find the expressions for input impedance and voltage
gain. Assume suitable model for transistor.
7. Derive the expressions for the following of a small signal transistor amplifier in terms of the
h-parameters (1) current gain (2) voltage gain (3) input impedance (4) output admittance.
8. Describe the operation of common drain FET amplifier and derive the equation for voltage
gain.
9. (i)With a neat circuit diagram explain the operation of a common source amplifier.
(ii)From the low frequency model, determine the input and output impedances and the
voltage gain of a JFET.
10. Draw the circuit diagram of common source FET amplifier and gave the design steps to find
the component values used in the circuit.
 UNIT-IV
MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER
PART A (2 Marks)

1. What are the advantages of differential amplifier?

A differential amplifier helps to increase the CMRR which in turn helps avoid unwanted
signals that couple into the input to get propagated. IT also helps to increase the signal to noise
ratio. Furthermore it provides larger output voltage swings.

2. Define CMRR and write its significance in differential amplifiers.

CMRR of op-amp is the ratio of the differential mode gain and common mode gain

3. What is meant by Common mode Rejection Ratio?

4. Define CMRR

5. What is the coupling schemes used in multistage amplifiers?

i) Resistance-Capacitance coupling
ii) Transformer coupling
iii) Direct coupling
6. Why we go for differential amplifier? (or) What is the need of differential amplifier?
The need for differential amplifier arises in many physical measurements, in medical
electronics and in direct coupled amplifier applications. In this amplifier, there will be no output
voltage resulting from thermal drifts or any other changes provided; changes in both halves of
the circuits are equal
7. State the various methods of improving CMRR?
The methods of improve CMRR are,
a. Constant current bias method
b. Use of current mirror circuit
c. Use of active load
8. What are the advantages of differential amplifier?
The advantages of differential amplifier are,
a. Very stable
b. Low noise, low drift,
c. Variations in supply voltage, temperature etc., will not change the gain of the
amplitude.
d. Does not require any coupling capacitor.
e. Frequency response is better.
9. What are the applications of a differential amplifier?
The applications of a differential amplifier are,
a. To measure many physical quantities,
b. Can be used as a direct coupled amplifier,
c. Used in operational amplifier.
10. What does bootstrapping technique mean?
If one end of the resistor changes in voltage, the other end of the resistor also moves
through the same change in voltage. This technique is known as bootstrapping. It is used to
increase the input impedance of the darlington pair circuits.
11. What are the special features of a difference amplifier that used FETs?
The special features of difference amplifier using FET are,
a. Very high input impedance.
b. The common mode rejection ability is increased which makes the common gain almost
zero.
12. State the various methods of improving CMRR?
The methods of improve CMRR are,
a. Constant current bias method
b. Use of current mirror circuit
c. Use of active load
13. Write the two types linear differential amplifiers?
The linear differential amplifiers are classified as,
a. Inverting amplifier.
b. Non Inverting amplifier
14. Write the gain equation of inverting amplifier?
The gain equation of inverting amplifier is,
Avf = Vo/Vin = -(Rf/Ri)
Avf= Gain with feedback
Rf = Feedback path resistor
Ri = Input resistor.
15. Write the configuration of differential amplifier?
The differential amplifier has the following configurations,
a. Dual input, balanced output differential amplifier,
b. Dual input, Unbalanced output differential amplifier,
c. Single input, balanced output differential amplifier,
d. Single input, unbalanced output differential amplifier.
16. What is the coupling methods used for coupling in multistage amplifiers?
The coupling methods used are,
a. RC coupling
b. Transformer coupling
c. Direct coupling
17. What are the drawbacks of the transformer coupled amplifier?
The disadvantages of transformer-coupled amplifiers are,
a. Transformer is bulky
b. Loss is more
c. Centre-tapped of transformer is difficult.
18. Why RC coupling is popular?
RC coupling is popular because it is simple, less expensive, less distortion and it provides
uniform bandwidth.
19. List the advantages of transformer coupled amplifier.
The advantages of transformer coupled amplifier are,
a. it is more efficient because the low DC resistance of the primary is connected to the
collector circuit.
b. It provides excellence impedance matching, thus voltage and power gains are
improved.
20. What is the use of transformer coupling in the output stage of multistage amplifier?
The transformer coupling provides impedance matching between input and output. As a
result the power gain is improved.
21. State the reason for fall in gain at low frequencies in the RC coupled amplifier.
a. The coupling capacitance (input) has very reactance at low frequency. Therefore it will
allow only a small part signal from one stage to next stage.
b. The bypass capacitor cannot bypass or shunt the emitter resistor effectively.
As a result of these factors, the voltage gain rolls off at low frequency.
22. What do you mean by tuned amplifiers?
The amplifiers which amplify only selected range of frequencies (narrow
band of frequencies) with the help of tuned circuits (parallel LC circuit) are called tuned
amplifiers.
23. What are the various types of tuned amplifiers?
(1) Small signal tuned amplifiers
a. Single tuned amplifiers
(i) Capacitive coupled
(ii) Inductively coupled (or) Transformer coupled
b. Double tuned amplifiers
c. Stagger tuned amplifiers
(2) Large signal tuned amplifiers
24. What is the response of tuned amplifiers?
The response of tuned amplifier is maximum at resonant frequency and it falls sharply for
frequencies below and above the resonant frequency.
25. When tuned circuit is like resistive, capacitive and inductive?
(1) At resonance, circuit is like resistive.
(2) For frequencies above resonance, circuit is like capacitive.
(3) For frequencies below resonance, circuit is like inductive.
26. List various types of cascaded Small signal tuned amplifiers.
1. Single tuned amplifiers.
2. Double tuned amplifiers.
3. Stagger tuned amplifiers.
27. How single tuned amplifiers are classified?
1. Capacitance coupled single tuned amplifier.
2. Transformer coupled or inductively coupled single tuned amplifier.
28. What are single tuned amplifiers?
Single tuned amplifiers use one parallel resonant circuit as the load impedance in each
stage and all the tuned circuits are tuned to the same frequency.
29. What are double tuned amplifiers?
Double tuned amplifiers use two inductively coupled tuned circuits per stage, both the
tuned circuits being tuned to the same frequency.
30. What are stagger tuned amplifiers?
Stagger tuned amplifiers use a number of single tuned stages in cascade, the successive
tuned circuits being tuned to slightly different frequencies. (OR)
It is a circuit in which two single tuned cascaded amplifiers having certain bandwidth are
taken and their resonant frequencies are adjusted that they are separated by an amount equal to
the bandwidth of each stage. Since resonant frequencies are displaced it is called stagger tuned
amplifier.
31. What is the effect of cascading single tuned amplifiers on bandwidth?
Bandwidth reduces due to cascading single tuned amplifiers.
32. List the advantages and disadvantages of tuned amplifiers.
Advantages:
1. They amplify defined frequencies.
2. Signal to Noise ratio at output is good.
3. They are well suited for radio transmitters and receivers.
4. The band of frequencies over which amplification is required can be varied.
Disadvantages:
1. Since they use inductors and capacitors as tuning elements, the circuit is bulky and
costly.
2. If the band of frequency is increased, design becomes complex.
3. They are not suitable to amplify audio frequencies.
33. What are the advantages of double tuned amplifier over single tuned amplifier?
1. It provides larger 3 dB bandwidth than the single tuned amplifier and hence provides
the larger gain-bandwidth product.
 2. It provides gain versus frequency curve having steeper sides and flatter top.
34. What the advantages are of stagger tuned amplifier?
The advantage of stagger tuned amplifier is to have better flat, wideband characteristics.
35. Mention the applications of class C tuned amplifier.
1. Class C amplifiers are used primarily in high-power, high-frequency applications such
as Radio-frequency transmitters.
2. In these applications, the high frequency pulses handled by the amplifier are not
themselves the signal, but constitute what is called the Carrier for the signal.
3. Amplitude modulation is one such example.
4. The principal advantage of class-C amplifier is that it has a higher efficiency than the
other amplifiers.
36. What is Neutralization?
The technique used for the elimination of potential oscillations is called neutralization.
(OR) The effect of collector to base capacitance of the transistor is neutralized by introducing a
signal that cancels the signal coupled through collector base capacitance. This process is called
neutralization.
37. What is the use of Neutralization?
1. BJT and FET are potentially unstable over some frequency range due to the feedback
parameter present in them.
2. If the feedback can be cancelled by an additional feedback signal that is equal in
amplitude and opposite in sign, the transistor becomes unilateral from input to output the
oscillations completely stop.
3. This is achieved by Neutralization.
38. What are the different types of neutralization?
1. Hazeltine neutralization
2. Rice neutralization
3. Neutrodyne neutralization.
39. How do you bias the class A operation?
In class A mode, the output current flows through out the entire period of input cycle and
the Q point is chosen at the midpoint of AC load line and biased.
40. Which amplifier gives minimum distortion?
Class S amplifier gives minimum distortion.
41. Give the applications of class C power amplifier.
The applications of class C power amplifier are,
a. Used in radio and TV transmitters.
b. Used to amplify the high frequency signals.
c. Tuned amplifiers
42. Give the two draw backs of class C amplifier.
The drawbacks of class C amplifier are,
a. Distortion is high.
b. Figure of merit is low.
43. Define the following modes of operation (a) Class AB (b) Class C.
a. Class AB
In this mode of operation, the output current flows for more than one half cycle but less
than full cycle.
b. Class C
In this mode, the level current flows for less than one half cycled i.e., ¼ th of the input
cycle.

44. Define Class B mode of operation and its advantages and disadvantages.
Class B mode of operation
The Biasing signal and input signal flow through the circuit for half cycle i.e., 1800.
Advantages
a. Efficiency is increased from 25% to 78.5%
b. Due to push pull configuration all even harmonics are reduced. So harmonic
distortions are reduced.
c. Due to centre-tapped transformer at input and output, the core saturation loss is
reduced.
Disadvantages
a. Transistor is biased above the cut off region
b. Due to the centre-tapped transformer at both input and output, the circuit becomes complex
45. What is Class D amplifier?
In order to increase the conversion efficiency, it would be desirable to make the device to
operate as a switch. So that its voltage drop remains almost at minimum value over the half cycle
of output current flow. Such a system is called class D amplifier.
46. State the merits of using push pull configuration.
The merits of push pull configurations are,
a. Efficiency is high (78.5%)
b. Figure of merit is high
c. Distortion is less.
d. Ripple present in the output due to power supply is multiplied.
47. What are the advantages of using complementary symmetry configuration?
The advantages of using complementary symmetry configuration are,
a. It does not use centre-tapped transformer either at input or output.
b. It uses one PNP transistor and one NPN transistor hence it provides proper impedance
matching. Hence its voltage gain is unity.
48. Define conversion efficiency of a power stage.
The ratio of the AC output power delivered to the load to DC input power applied is
referred to as conversion efficiency. It is also called as collector circuit efficiency in case of
transistor amplifier.
49. Write down the values of maximum possible power conversion efficiency for class A
direct coupled and transformer coupled.
For class A direct coupled η= 25%
For class A transformer coupled η= 50%
50. What is cross over distortion?
In class B mode both transistors are biased at cut off region because the DC bias voltage
is zero. So input signal should exceed the barrier voltage to make the transistor conduct.
Otherwise the transistor doesn’t conduct. So there is a time interval between positive and
negative alternations of the input signal when neither transistor is conducting. The resulting
distortion in the output signal is cross over distortion.

PART B (16 Marks)

1. (i)Discuss the working of a basic emitter coupled differential amplifier circuit.
(ii) Compare CB, CE and CC amplifiers.
2. Draw a differential amplifier and its ac equivalent circuit. Derive for Ad and Ac.
3. Derive the equation for differential mode gain and common mode gain of a differential
amplifier.
4. (i)Explain the operation of the transformer coupled class A audio power amplifier.
(ii)Explain the terms conversion efficiency and maximum value of efficiency used in audio
power amplifiers.
5. Explain the operation of the class-B push pull power amplifier with neat diagram and list its
advantages.
6. Discuss about the various neutralization methods in detail.
7. (i)Explain class A power amplifier with circuit diagram and derive for its efficiency.
(ii)Draw the dc and ac load lines for the transistor CE characteristics.
8. (i)Explain complementary – Symmetry class B power amplifier and derive for its efficiency.
(ii)Explain class D power amplifier with necessary sketches.
 UNIT-V
FEEDBACK AMPLIFIERS AND OSCILLATORS
PART A (2 Marks)
1. List the advantages of negative feedback amplifiers.
1. Input resistance is very high.
2. Output resistance is low.
3. The transfer gain Af of the amplifier with feedback can be stabilized against Variations
of the h-parameters or hybrid π parameters of the transistors or the Parameters of the others
active devices used in the amplifiers.
4. It improves the frequency response of the amplifiers.
5. There is a significant improvement in the linearity of operation of the feedback.
2. Mention any two high frequency LC oscillators.
Hartley, colpitt’s and clapp oscillators.
3. What is positive feedback?
When input signal and part of the output signal are in phase, the feedback is called
Positive feedback.
4. What is negative feedback?
When input signal and part of the output signal are in out of phase, the feedback is called
negative feedback.Give topology for various types of feedback amplifiers.
1. Voltage amplifier with voltage series feedback.
2. Transconductance amplifier with current-series feedback.
3. Current amplifier with current-shunt feedback
4. Transresistance amplifier with voltage shunt feedback
5. Define feedback factor β.
The ratio of the feedback voltage to output voltage is known as feedback factor or
feedback ratio.
6. What is the barkhausen criterion for the feedback oscillators?
1. The total phase shift around a loop, as the signal proceeds from input through
amplifier, feedback network back to input again, completing a loop, is precisely 00 or 3600.
2. The magnitude of the product of the open loop gain of the amplifier
(A) and the feedback factor β is unity. i.e., A β = 1.
7. Mention the classification of feedback oscillators.
a. Waveform type (sinusoidal, square, triangular,etc.,)
b. Circuit components (LC, RC,etc.,)
c. Range of frequency –A.F (audio), R.F (radio)
d. Type of feedback (RC phase shift, Wein bridge are feedback used, UJT relaxation
oscillators uses no feedback)
8. What is meant by feedback?
A portion of the output signal is taken from the output of the amplifier and is combined
with the normal input signal. This is known as feedback.
(OR)
 Feedback is a part of output is sampled and fedback to the input of the amplifier.
9. Give the expression for gain of an amplifier with feedback.
Avf = AV/ 1+ AV β
Where, Avf – feedback voltage gain. AV – Voltage gain.
β - Feedback factor
10. Why in practice A β is kept greater than unity.
To amplify small noise voltage present, so that oscillations can start, A β is kept initially
greater than unity.
11. Write down the advantages & disadvantages of RC phase shift oscillator.
Advantages:
a) Simplicity of the circuit.
b) Useful for frequencies in the audio range.
c) A sine wave output can be obtained.
Disadvantages:
a) Poor frequency stability.
b) It is difficult to get a variable frequency output, because to change the frequency, we
need to vary all the resistors and capacitors simultaneously which is practically very difficult.
12. Write down the advantages, disadvantages and applications of Hartley oscillator
Advantages:
a) It is easy to tune
b) It can operate over a wide frequency typically from few Hz and several MHz.
c) It is easy to change the frequency by means of a variable capacitor.
Disadvantages:
a) Poor frequency stability.
Applications:
a) it is used as local oscillator in radio and TV receivers.
b) In the function generator.
13. Write down the advantages, disadvantages and applications of colpitt’s oscillator
Advantages:
a) Simple construction.
b) It is possible to obtain oscillations at very high frequencies.
Disadvantages:
a) It is difficult to adjust the feedback as it demands change in capacitor values. b) Poor
frequency stability.
Application:
a) As a high frequency generator.
14. Write down the comparison between LC oscillators and crystals oscillators

S.NO Crystal oscillator LC oscillator

1. Frequency of oscillations depends on Frequency of oscillations is
the dependent on values of L and C
 dimensions of crystal
2. Accuracy depends only on the fine Accuracy mainly depends on
cut of the tolerances of L and C
crystal
3. Q is very high and it is stable Q is less as compared to the
crystal
4. Miller crystal oscillator, pierce Hartley, colpitt’s and clap
crystal oscillator oscillators are the examples of
are the examples of crystal oscillator LC oscillators.

15. Write down the advantages, disadvantages and applications of crystal oscillator
Advantages:
a) Very high frequency stability.
b) Very low frequency drift due to change in temperature and other parameters.
c) It is possible to obtain very high, precise and stable frequency of oscillations.
d) The Q is very high.
Disadvantages:
a) These are suitable for high frequency applications.
b) Crystals of low fundamental frequencies are not easily available.
Applications:
a) As a crystal clock in microprocessors.
b) In the radio and TV transmitters.

16. Give the comparison between RC and LC oscillators.

S.NO RC oscillators LC oscillators

1. Frequency of oscillations is
dependent on values of R and C
2. These are used at low and
medium frequencies
3. Phase shift and wein bridge
oscillators are the examples of
RC oscillators
17. Write down the general applications of oscillators.
a) As a local oscillator in radio receivers.
b) In T.V receivers and signal generators.
Frequency of oscillations is dependent
on
values of L and C
These are preferred at high frequencies
Hartley, colpitt’s and clapp oscillators
are
the examples of LC oscillators

c) As clock generation for logic circuits.

d) AM and FM transmitters.
e) In phase lock loops.
18. Write down the comparison of RC oscillators.

S.No Parameter Phase shift oscillator Wein bridge oscillator

1. Feedback Consists of three Uses wien bridge circuit
network identical RC sections as
connected in cascade feedback network
2. Phase shift 1800 at frequency of 00 at frequency of
introduced by the oscillations oscillations
feedback network
3. Phase shift 1800 at frequency of 00 at frequency of
introduced by the oscillations oscillations
amplifier
4. Frequency of 1 f=1
oscillations f = 2π 6RC 2πRC
5. Value of β β = -1/29 for oscillator β = + 1/3 for oscillator
using OP-AMP using OP-
AMP

PART B (16 Marks)

1. Explain the concept of negative feedback in amplifier. Derive the expression for voltage
gain, input impedance and output impedance.
2. Draw the block diagram of a voltage series feedback amplifier and derive the equation for
input impedance, output impedance and the voltage gain.
3. Draw the block diagram of a voltage shunt feedback amplifier and derive the equation for
input impedance, output impedance and the voltage gain.
4. Draw the block diagram of a current series feedback amplifier and derive the equation for
input impedance, output impedance and the voltage gain.
5. Draw the block diagram of a current shunt feedback amplifier and derive the equation for
input impedance, output impedance and the voltage gain.
6. Calculate the voltage gain, input and output resistances of a voltage series feedback amplifier
having AV = 300, Ri = 1.5 k, Ro = 50 k and β = 1/15.
7. Draw the circuit of a Hartley oscillator and derive the condition for the frequency of
oscillation. `
8. Draw and explain the operation of a Wein bridge oscillator.
9. With a neat diagram explain the construction of RC phase shift oscillator.
10. Discuss the operation of a colpitts oscillator in detail.
 PART-C
[1] In order for a BJT to conduct under the conditions of no signal input, the bias must be
(a) In the reverse direction at the E-B junction, sufficient to cause forward breakover.
(b) In the reverse direction at the E-B junction, but not sufficient to cause avalanche effect.
(c) Such that the application of a signal would cause the transistor to go into a state of cutoff.
(d) Such that the application of a signal would cause the transistor to go into a state of saturation.
(e) Such that the application of a signal would cause the transistor to become nonlinear.

Answer:A
[2] The high input impedance of a MOSFET makes this type of device ideal for use in

(a) Weak-signal amplifiers

(b) High-power oscillators
(c) High-current rectifiers
(d) Antenna tuning networks
(e) Graphic equalizers

Answer:A
[3] The drain of a JFET is the analog of the
(a) Plate of a vacuum tube
(b) Emitter of a BJT
(c) Cathode of diode
(d) Positive electrode in a solar cell
(e) Substrate of a MOSFET

Answer:A
[4] One of the technical limitations of capacitive proximity sensors is the fact that they
(a) Are not very sensitive to objects that are poor electrical conductors.
(b) Are insensitive to objects that reflect light.
(c) Are insensitive to metallic objects.
(d) Cannot be used with oscillators
(e) Require extreme voltages in order to function properly

Answer:A
[5] The power factor in an ac circuit is defined as
(a) The actual power divided by the maximum power the circuit can handle.
(b) The ratio of the real power to the imaginary power.
(c) The ratio of the apparent power to the true power.
(d) The ratio of the true power to the apparent power.
(e) The ratio of the imaginary power to the apparent power.

Answer:D
[6] The amount of current that a silicon photodiode can deliver in direct sunlight depends on
(a) The forward breakover voltage.
(b) The thickness of the substrate.
(c) The surface area of the P-N junction.
(d) The applied voltage.
(e) The reverse bias.

Answer:C
[7] In an amplifier that employs a P-Channel JFET, the device can usually be replaced with an
N-channel JFET having similar specifications, provided that
(a) All the resistors are reversed in polarity for the circuit in question
(b) The power supply polarity is reversed for the circuit in question
(c) The drain, rather than the source, is placed at signal ground
(d) The output is taken from the source, rather than from the drain.

Answer:B
[8] Secondary breakdown occurs in
(a) MOSFET but not in BJT
(b) Both MOSFET and BJT
(c) BJT but not in MOSFET
(d) None of these

Answer:C
[9] In a transistor
(a) β = α/ (α +1)
(b) β = α/ (1- α)
(c) α = β/ (β-1)
(d) α = (β+1)/β

Answer: C
[10] The interbase resistance of a UJT is
(a) Less than forward biased PN diode
(b) Higher than a FET
(c) Of the order of 1K an less
(d) In the range of 5K to 10K

Answer: D
[11] The VI characteristics of emitter of a UJT is
(a) Similar to CE with a linear and saturation region
(b) similar to FET with a linear and saturation region
(c) Similar to tunnel diode in some respects
(d) Linear between the peak point and vally point

Answer: C

[12] An UJT used for triggering as SCR has the supply voltage VBB = 25V. The intrinsic stand
off ratio n = 0.75. The UJT will conduct when the bias voltage VE is
(a) 25V
(b) >=18.75V
(c) 33.3V
(d) >=19.35V
Answer: D
[13] The Oscillator which is not dependent on phase shift is
(a) Wien Bridge
(b) Clapp
(c) Relaxation
(d) Crystal

Answer: C
[14] For an UJT to function, the load line must extend
(a) from saturation region to ohmic region
(b) from saturation to peak value of emitter voltage
(c) from valley point to peak point
(d) within valley and peak points in the negative resistance region

Answer: D
[15] In forward mode npn BJT, if the voltage Vcc is increased then the collector current will
increase
A. Due to ohm's law, higher Vcc causes higher current
B. Due to base width decrease less carrier recombine in the base region
C. As the gradient of the minority carriers in the base region becomes steeper
D. Due to both the B and C

Ans: D
[16] The barrier voltage present in a junction diode is the effect of
A. The P side and N side of the junction forming a battery
B. The emf required to move the holes fast enough to have the mobility equal to that of the
electrons
C. The recombination of charge carriers across the junction leaving behind the opposite charged
ions
D. The voltage needed to make the semiconductor material behave as a conductor

Ans: C
[17] Compare to BJT the FET has
A. High input impedance
B. High gain bandwidth product
C. Better current controlled behaviour
D. High noise immunity

Ans: A
[18] An intrinsic semiconductor at absolute zero temperature
A. Has a large number of holes
B. Behaves like an insulator
C. Behaves like a metallic conductor
D. Has few holes and same number of electrons
Ans: A
[19] For the operation of a depletion type N-MOSFET, the gate voltage has to be
A. Low positive
B. High positive
C. High negative
D. Zero

Ans:D
[20] An emitter follower has high input impedance because
A. Large emitter resistance is used
B. Large biasing resistance is used
C. There is negative feedback in the base emitter circuit
D. The emitter base junction is highly reverse biased
Ans: C

[21] In a differential amplifier an ideal CMRR is

A. Infinity
B. Zero
C. -1
D. +1

Ans: A

[22] In a PNP circuit, the collector

A. Has a arrow pointing inward
B. Is positive with respect to the emitter
C. Is biased at a small fraction of the base bias
D. Is negative with respect to the emitter

Ans:D
[23] A PNP transistor can be replaced with an NPN device and the circuit will do the same thing,
provided that
A. The power supply or battery polarity is reversed
B. The collector and emitter leads are interchanged
C. The arrow is pointing inward
D. A PNP transistor can never be replaced with NPN transistor

Ans: A
[24] A BJT has
A. Three PN junctions
B. Three semiconductor layers
C. Two N type layers around a P type layer
D. A low avalanche voltage
Ans: B
[25] The band gap of silicon at room temperature is________
A) 1.3 eV
B) 0.7 eV
C) 1.1 eV
D) 1.4 eV

Ans: C
[26] The primary reason for the widespread use of Silicon in semiconductor device technology
is
A) Abundance of silicon on the surface of the earth
B) Larger bandgap of silicon in comparison to germanium
C) Favorable properties of silicon-dioxide (SiO2)
D) Lower melting Point

Ans: C
[27] The cascade amplifier is a multistage configuration of
A) CC-CB
B) CE-CB
C) CB-CC
D) CE-CC

Ans: B
[28] In a multi-stage RC coupled amplifier the coupling capacitor______________
A) Limits the low frequency response
B) Limits the high frequency response
C) Does not affect the frequency response
D) Block the DC component without affecting the frequency response

Ans: A
[29] A Zener diode is used for
a) Voltage Regulation
b) Rectification
c) Noise Suppression
d) Blocking A.C

Ans: Voltage Regulation

[30] An SCR is a device having
a) Three layers with four junctions
b) Three layers with two junctions
c) Four layers with three junctions
d) Two layers with three junctions

Ans: Four layers with three junctions

[31] An amplifier has a gain of 10,000 expressed in decibels the gain is
a) 10
b) 40
c) 80
d) 100

Ans: 80
[32] An emitter follows has
a) High input impedance and high output impedance.
b) High input impedance and low output impedance.
c) Low input impedance and high output impedance.
d) Low input impedance and low output impedance.

Ans:High input impedance and low output impedance.

[33] Semi-conductor diode time constant is equal to
a) The value of majority carrier life time
b) The life time of minority carrier
c) The diffusion capacitance time constant
d) Zero

Ans: The value of majority carrier life time

[34] To prepare a P type semiconducting material the impurities to be added to silicon are
a) Boron, Gallium
b) Arsenic, Antimony
c) Gallium, Phosphorous
d) Gallium, Arsenic

Ans:Boron, Gallium
[35] FET is a good signal chopper because
a) It exhibits no offset voltage at zero drain current
b) It occupies less space in integrated form
c) It is less noisy
d) It has got high input impedance

Ans: It exhibits no offset voltage at zero drain current

[36] In Bipolar Junction transistors, the type of configuration which will give both voltage gain
and current gain is
a) CC
b) CB
c) CE
d) None

Ans: CE
[37] To increase the input resistance and decrease the output resistance in negative feedback, the
type used is
a) Voltage Shunt
b) Current Series
c) Voltage Series
d) Current Shunt
Ans: Voltage Series
[38] A series capacitance used in a filter circuit represents
a) Low-Pass
b) Band-Pass
c) High-Pass
d) None

Ans: High-Pass
[39] An ideal power supply is characterized by
a) Very large output resistance
b) Very small output resistance
c) Zero internal resistance
d) Infinite internal resistance

Ans: C
[40] An ideal diode should have
a) Zero resistance in the forward bias as well as reverse bias
b) Zero resistance in the forward bias and an infinitely large resistance in reverse bias
c) Infinitely large resistance in reverse bias
d) Infinitely large resistance in forward as well as reverse bias

Ans: B
[41] One coulomb-per-second is equal to one:
a) Watt
b) Joule
c) Volt
d) Ampere

Ans:D
[42] Which of the following is one of the functions performed by a diode?
a) Filter
b) Amplifier
c) Rectifier
d) Inverter

Ans: C
[43] What is the “power factor”?
a) Ratio of true power to apparent power
b) Peak power times 0.707
c) Sin of the phase difference between E and I
d) Cos of the phase angle between true power and apparent power

Ans:A
[44] In forward mode npn BJT, if the voltage Vcc is increased then the collector current will
increase
A. Due to ohm's law, higher Vcc causes higher current
B. Due to base width decrease less carrier recombine in the base region
C. As the gradient of the minority carriers in the base region becomes steeper
D. Due to both the B and C
Ans: D
[45] The barrier voltage present in a junction diode is the effect of
A. The P side and N side of the junction forming a battery
B. The emf required to move the holes fast enough to have the mobility equal to that of the
electrons
C. The recombination of charge carriers across the junction leaving behind the opposite charged
ions
D. The voltage needed to make the semiconductor material behave as a conductor
Ans: C
[46] Compare to BJT the FET has
A. High input impedance
B. High gain bandwidth product
C. Better current controlled behaviour
D. High noise immunity
Ans: A
[47] An intrinsic semiconductor at absolute zero temperature
A. Has a large number of holes
B. Behaves like an insulator
C. Behaves like a metallic conductor
D. Has few holes and same number of electrons
Ans: A
[48] For the operation of a depletion type N-MOSFET, the gate voltage has to be
A. Low positive
B. High positive
C. High negative
D. Zero
Ans:D
[49] An emitter follower has high input impedance because
A. Large emitter resistance is used
B. Large biasing resistance is used
C. There is negative feedback in the base emitter circuit
D. The emitter base junction is highly reverse biased
Ans: C
[50] In a differential amplifier an ideal CMRR is
A. Infinity
B. Zero
C. -1
D. +1

Ans: A