TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

Copyright © 2000, Power Innovations Limited, UK APRIL 1971 - REVISED JUNE 2000

● 8 A Continuous On-State Current

TO-220 PACKAGE
● 80 A Surge-Current (TOP VIEW)
● Glass Passivated Wafer
K 1
● 400 V to 800 V Off-State Voltage
A 2
● Max IGT of 20 mA
G 3

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC116D 400
TIC116M 600
Repetitive peak off-state voltage VDRM V
TIC116S 700
TIC116N 800
TIC116D 400
TIC116M 600
Repetitive peak reverse voltage VRRM V
TIC116S 700
TIC116N 800
Continuous on-state current at (or below) 70°C case temperature (see Note 1) IT(RMS) 8 A
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
IT(AV) 5 A
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3) ITM 80 A
Peak positive gate current (pulse width ≤ 300 µs) IGM 3 A
Peak gate power dissipation (pulse width ≤ 300 µs) PGM 5 W
Average gate power dissipation (see Note 4) PG(AV) 1 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.

PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Repetitive peak
IDRM VD = rated VDRM TC = 110°C 2 mA
off-state current
Repetitive peak
IRRM VR = rated VRRM IG = 0 TC = 110°C 2 mA
reverse current
IGT Gate trigger current VAA = 12 V RL = 100 Ω tp(g) ≥ 20 µs 8 20 mA
VAA = 12 V RL = 100 Ω TC = - 40°C
2.5
tp(g) ≥ 20 µs
VAA = 12 V RL = 100 Ω
VGT Gate trigger voltage 0.8 1.5 V
tp(g) ≥ 20 µs
VAA = 12 V RL = 100 Ω TC = 110°C
0.2
tp(g) ≥ 20 µs
VAA = 12 V TC = - 40°C
100
Initiating IT = 100 mA
IH Holding current mA
VAA = 12 V
40
Initiating IT = 100 mA
On-state
VT IT = 8 A (see Note 5) 1.7 V
voltage
Critical rate of rise of
dv/dt VD = rated VD IG = 0 TC = 110°C 400 V/µs
off-state voltage
NOTE 5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W

PRODUCT INFORMATION

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 TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

THERMAL INFORMATION

AVERAGE ON-STATE CURRENT MAX ANODE POWER LOSS

DERATING CURVE vs
ON-STATE CURRENT
TI03AA TI03AB
16 100

PA - Max Continuous Anode Power Dissipated- W

TJ = 110°C
IT(AV) - Maximum Average On-State Current - A

14

12
0° 180°
Φ 10
10 Conduction
Continuous DC Angle
8

6
1
4 Φ = 180°

0 0·1
30 40 50 60 70 80 90 100 110 0·1 1 10 100
TC - Case Temperature - °C IT - Continuous On-State Current - A
Figure 1. Figure 2.

SURGE ON-STATE CURRENT TRANSIENT THERMAL RESISTANCE

vs vs
CYCLES OF CURRENT DURATION CYCLES OF CURRENT DURATION
TI03AC TI03AD
100 10
RθJC(t) - Transient Thermal Resistance - °C/W
ITM - Peak Half-Sine-Wave Current - A

10 1

TC ≤ 70°C
No Prior Device Conduction
Gate Control Guaranteed
1 0·1
1 10 100 1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3. Figure 4.

PRODUCT INFORMATION

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 TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE

vs vs
CASE TEMPERATURE CASE TEMPERATURE
TC03AA TC03AB
1

VAA =12 V
RL = 100 Ω
IGT - Gate Trigger Current - mA

0·8

VGT - Gate Trigger Voltage - V

tp(g) ≥ 20 µs

10
0·6

0·4

VAA =12 V
RL = 100 Ω
0·2
tp(g) ≥ 20 µs

1 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
TC - Case Temperature - °C TC - Case Temperature - °C

Figure 5. Figure 6.

HOLDING CURRENT PEAK ON-STATE VOLTAGE

vs vs
CASE TEMPERATURE PEAK ON-STATE CURRENT
TC03AD TC03AE
100 2·5
TC = 25 °C
VAA = 12 V
tP = 300 µs
Initiating IT = 100 mA
VTM - Peak On-State Voltage - V

2 Duty Cycle ≤ 2 %
IH - Holding Current - mA

1·5

10

0·5

1 0
-50 -25 0 25 50 75 100 125 0·1 1 10 100
TC - Case Temperature - °C ITM - Peak On-State Current - A
Figure 7. Figure 8.

PRODUCT INFORMATION

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 TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20

3,96 10,4 1,32

ø 3,71 10,0 2,95 1,23
2,54

6,6
6,0

15,32
14,55

18,0 TYP. 6,1

5,6

14,1
1,47 12,7
0,97 1,07
0,66
1 2 3

2,74 0,64
2,34 0,41

5,28 2,90
4,68 2,40

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

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TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 2000, Power Innovations Limited

PRODUCT INFORMATION

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