Measurements and Simulations of

Charge Collection Efficiency of

p+/n Junction SiC Detectors
Francesco Moscatelli1,2, Andrea Scorzoni2,1, Antonella Poggi1, Mara
Bruzzi3, Stefano Lagomarsino3 , Silvio Sciortino3 , Mihai Lazar4 and
Roberta Nipoti1
1CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna, Italy
2DIEIand INFN, Università di Perugia, via G. Duranti 93, 06125 Perugia, Italy
3Dipartimento di Fisica, Polo Scientifico di Sesto Fiorentino,Via Sansone 1 Firenze Italy
4CEGELY (UMR CNRS n°5005), INSA de Lyon, 20, Av. A. Einstein, 69621 Villeurbanne, France

This work was partially supported by the CERN RD50

Collaboration.and by the INFN SiCPOS project

Università degli Studi di Perugia IMM Bologna

1
 Outline
• Introduction
• Technological processes and I/V - C/V
measurements on p+/n diodes
• CCE setup and measurements
• Modeling of SiC detectors
– Motivations and simulation tool
– Results
• Conclusions

Università degli Studi di Perugia IMM Bologna

2
 Introduction
• Large Hadron Collider
(LHC) experiment (upgrade)
• Fast hadron fluences above
1016 cm-2 (after 10 years)
• Current silicon technology is
unable to cope with such an
environment
– Unreachable full depletion
voltage
– Very high leakage current
– Poor charge collection
efficiency
Università degli Studi di Perugia IMM Bologna
3
 Silicon Carbide
- large Eg (3-3.3 eV) very low leakage current
- MIP (Minimum Ionizing Particle) generates 55 e/h pairs per µm
- radiation hardness (?) (high atomic binding within the material)
- high quality crystals now available
- Schottky barrier detectors have been studied as α-particle
detectors (100% of charge collection efficiency (CCE))*
- complex radiation detectors an integrated electronic readout
on board of the detector chip. p/n junctions are needed

* F. Nava, et al. , IEEE Transactions on Nuclear Science, Vol. 51, No. 1 (February, 2004).

Università degli Studi di Perugia IMM Bologna

4
 SiC Process: p+/n

n− Epi (40 µm) doping: Al (350 nm) /

Ti (80 nm)
1 ×1015 cm-3
n+ deposition

Ion implantation
Al+ @ 300°C
Annealing 1650°C 30 min
p+ doping (0.4 µm) Annealing 1000°C
= 4×1019 cm-3 in vacuum 2 min
p- doping (0.6 µm)
= 5×1017 cm-3

Università degli Studi di Perugia IMM Bologna

5
 I-V measurements In collaboration with INSA-

on p+/n diodes CEGELY, Lyon France

3 0
1x10 1x10
Ti-Al 1x10
1 Forward I-V -1
1x10
Reverse I-V

p- p+ -1
1x10 n=1.5-1.6 -2
1x10

J (A/cm2)
J (A/cm2)
-3
1x10
n -3
1x10 -4 VBD
1x10
n+ -5
1x10 -5
1x10
n=2
-7
1x10 -6
1x10
Ni -9
1x10 -7
0 1 2 3 4 5 1x10
-4000 -3000 -2000 -1000 0
V (V) V (V)
• 75% of diodes have good I-V curves
• VBD is about 4 kV
• Theoretical limit for this device: 5 kV
Università degli Studi di Perugia IMM Bologna
6
 CV measurements
Ti-Al 1E16

p+
n

Ndop [cm ]
-3
n+
1E15
Ni

5 10 15 20 25 30
Depth [µm]

• Epi doping (1.1×1015 cm-3) confirmed

Università degli Studi di Perugia IMM Bologna

7
 CCE measurements setup
90Sr 0.1mCi

Acquisition
Amptek
system

S+PM trigger

Università degli Studi di Perugia IMM Bologna

8
 CCE measurements
• Measurements on p+/n diodes: epi 1.1.1015 cm-3 40 µm,
• Max. applied voltage: 900V (30 µm depleted). Vdep (from theory) =1600V
Number of collected charges

32
p+/n Collection lenght
1600 28 depleted region

24 collected charge
L=

L [µm]
1200 55 pairs/µm
20

16
800
12
200 400 600 800 200 400 600 800
Reverse voltage [V] Reverse voltage [V]
• 100% collection efficiency in the 30 µm deep depleted region using
measured lengths of depleted region

Università degli Studi di Perugia IMM Bologna

9
 Motivations for simulation
• Very high cost of SiC wafers
• Trade off between SiC wafer quality and available budget
• Suitability of device simulation for design optimization
• Introducing traps, we will be able to analyze which defects
are important to decrease the CCE
Simulation Tool
• DESSIS ISE-TCAD
– Discrete time and spatial solution to the
fundamental semiconductor equations
– 6H-SiC model available
Università degli Studi di Perugia IMM Bologna
10
 Grid and Heavy Ion crossing Depleted region

Hole
density

Before crossing After crossing

Heavy Ion crossing modeling available within DESSIS ISE-TCAD
Università degli Studi di Perugia IMM Bologna
11
 p+/n diode output signal
-6
3x10
• Collected Charge
t
CC = ∫0 I ⋅ dt

Current [A]
-6
2x10

-6
1x10
• Particle crossing
at 2.5 ns 0

-9 -9 -9
2x10 3x10 4x10
Time [s]
epi doping (40 µm) = 1015 cm-3
p+ doping (0.45 µm) = 4×1019 cm-3

Università degli Studi di Perugia IMM Bologna

12
 Simulations of CC of Schottky diodes
50 µm
Collection length (90Sr source, β particles )
Schottky contact:qφB=1.6 eV
40
38 µm
epi n 35

30

L (µm)
25
simulations
substrate n+ 20 measurements

15
0 20 40 60 80 100
Voltage [V]
* Measurements from:
F. Nava, et al. , IEEE Transactions on
Ohmic contact Nuclear Science, Vol. 51, No. 1 (February, 2004).

Università degli Studi di Perugia IMM Bologna

13
 Simulations of CC of p+/n diodes
p+
32
40 µm measurements
ND = 1.1×1015 cm-3 simulations
28

24

L [µm]
20

ND = 7×1018 cm-3 16
60 µm
12
200 400 600 800
Reverse voltage [V]

CCE experimental results are

50 µm well reproduced
Università degli Studi di Perugia IMM Bologna
14
 Conclusions
• p+/n junctions have been realized and
electrically characterized. Good forward and
reverse characteristics have been obtained
• First CCE experimental results on SiC pn
junctions: 100% collection efficiency in 30 µm
using measured lengths of depleted region
• Development of a simulation model for SiC to
obtain good agreement with CC measurements
on Schottky and p+/n SiC diodes
Università degli Studi di Perugia IMM Bologna
15
 Future developments
• Radiation hardness will be verified.
• New SiC detectors will be realized taking into
account the simulation results.
• Using DLTS measurements and simulations,
we will be able to analyze which defects are
important to decrease the CCE

Università degli Studi di Perugia IMM Bologna

16