19EC102 ELECTRONIC DEVICES AND CIRCUITS LTPC

3003
OBJECTIVES:

 To get exposed about basic electronic devices

 To acquaint the students with the construction, theory and operation of the
basic electronic devices such as PN junction diode, Bipolar and Field effect
Transistors.

Unit-1 Semiconductor Material Properties: [9]

Elemental & compound semiconductor materials , Bonding forces and Energy bands in
intrinsic and extrinsic silicon, Charge carrier in semiconductors , carrier concentration,
Junction properties, Equilibrium condition, biased junction, Steady state condition,
breakdown mechanism (Rectifying Diodes, Zener Diodes), Metal Semiconductor Junction.
Special diodes: Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE
MOSFET, PN Junction diode-Schottky barrier diode-Zener diode-Varactor diode –Tunnel
diode- Gallium Arsenide device, LASER diode, LDR

Unit-2 Diode circuits: [9]

Ideal and Practical diode, Clipper, Clamper. Power Supply: Rectifiers-Half wave, Full wave,
Bridge rectifier, filter circuits, Voltage regulation using shunt & series regulator circuits,
Voltage regulation using IC.

Unit-3 Fundamentals of BJT: [9]

Construction, basic operation, current components and equations,CB, CE and CC
configuration, input and output characteristics, Early effect, Region of operations: active, cut-
off and saturation region. BJT as an amplifier. Ebers-Moll model, Power dissipation in
transistor (Pd, max rating), Photo transistor. Transistor biasing circuits and analysis:
Introduction, various biasing methods: Fixed bias,Self bias, Voltage Divider bias, Collector to
base bias, Load-line analysis: DC and AC analysis, Operating Point and Bias Stabilization and
Thermal Runaway. Transistor as a switch.

Unit-4 Small Signal analysis: [9]

Small signal Amplifier,Amplifier Bandwidth, Hybrid model, analysis of transistor amplifier
using h-parameter, Multistage Amplifier: Cascading amplifier, Boot-strapping Technique,
Darlington amplifier and cas-code amplifier, Coupling methods in multistage amplifier, Low
and high frequency response, Hybrid πmodel, Current Mirror circuits. Large Signal analysis
and Power Amplifiers: Class A,Class B,Class AB, Class C, Class D, Transformer coupled and
Push-Pull amplifier.

Unit-5 FET construction: [9]

JFET: Construction, n-channel and p-channel, transfer and drain characteristics, parameters,
Equivalent model and voltage gain, analysis of FET in CG, CS and CD configuration.
Enhancement and Depletion MOSFET drain and transfer Characteristics. Unijunction
Transistor (UJT)
OUTCOMES:
At the end of the course, the student should be able to:
 Explain the V-I characteristic of diode, UJT
 Gain knowledge on basic semiconductor devices
 Describe the equivalence circuits of transistors
 Operate the basic electronic devices such as PN junction diode, Bipolar
and Field effect Transistors

TEXT BOOKS:

1. William H. Hayt, Jr. Jack E. Kemmerly and Steven M. Durbin,

―Engineering Circuit Analysis‖ , McGraw Hill Science Engineering, Eighth
Edition, 11th Reprint 2016.
2. Joseph Edminister and Mahmood Nahvi, ―Electric Circuits‖, Schaum’s
Outline Series, Tata McGraw Hill Publishing Company, New Delhi, Fifth
Edition Reprint 2016.
3. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition,
Tata Mc GrawHill Inc.2007
REFERENCES:
1. Charles K. Alexander, Mathew N.O. Sadiku, ―Fundamentals of Electric
Circuits‖, Fifth Edition, McGraw Hill, 9th Reprint 2015.
2. A.Bruce Carlson, ―Cicuits: Engineering Concepts and Analysis of Linear
Electric Circuits‖, Cengage Learning, India Edition 2nd Indian Reprint
2009.
3. Allan H.Robbins, Wilhelm C.Miller, ―Circuit Analysis Theory and
Practice‖, Cengage Learning, Fifth Edition, 1st Indian Reprint 2013.