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Typical Application
VOU T
VAC
GND
STR-W6000S
FB/OLP
S/ OCP
D/ST
GND
V CC
BR
1 3 4 5 6 7
Brown-In/Brown-Out function
disabled by connecting BR
terminal to GND.
STR-W605xS-DS
Current Mode Control PWM Regulator IC
STR-W605xS
For Switching Power Supplies
Selection Guide
VCC D/ST
4 Startup 1
BR Brown-In/
7 Brown-Out
DRV
PWM OSC SQ
R
OCP
VCC OLP
Drain Peak Current
Compe nsa tion
FB/OLP Fe edback
LEB 3
6 Control
S/OCP
Slope GND
5
Compensation
Pin-out Diagram
1 2 3 4 5 6 7
60
1 ms
1
40
20
0.1
0
0 20 40 60 80 100 120
To use this graph, apply the S.O.A
Internal Frame Temperature, TF (°C) temperature derating coefficient
taken from the graph at the left
0.01
1 10 100 1000
Drain-to-Source Voltage, VDS (V)
MOSFET Avalanche Energy Derating Coefficient Curve MOSFET Temperature versus Power Dissipation Curve
100 25
Allowable Power Dissipation, PD1 (W)
Temperature Derating Coefficient (%)
60 15
EAS
40 10
20 5
Without heatsink
PD1 = 1.3 W at TA ≤ 25°C
0 0
25 50 75 100 125 150 0 20 40 60 80 100 120 140 160
Channel Temperature, Tch (°C) Ambient Temperature, TA (°C)
0.1
0.01
10-6 10-5 10-4 10-3 10-2 10-1
Time (s)
by on-resistance
10 0.1 ms
80
60 1 ms
1
40
20
0.1
0
0 20 40 60 80 100 120
To use this graph, apply the S.O.A
Internal Frame Temperature, TF (°C) temperature derating coefficient
taken from the graph at the left
0.01
1 10 100 1000
Drain-to-Source Voltage, VDS (V)
MOSFET Avalanche Energy Derating Coefficient Curve MOSFET Temperature versus Power Dissipation Curve
100 25
Allowable Power Dissipation, PD1 (W)
Temperature Derating Coefficient (%)
60 15
EAS
40 10
20 5
Without heatsink
PD1 = 1.3 W at TA ≤ 25°C
0 0
25 50 75 100 125 150 0 20 40 60 80 100 120 140 160
Channel Temperature, Tch (°C) Ambient Temperature, TA (°C)
0.1
0.01
10-6 10-5 10-4 10-3 10-2 10-1
Time (s)
by on-resistance 0.1 ms
10
80
60 1 ms
1
40
20
0.1
0
0 20 40 60 80 100 120
To use this graph, apply the S.O.A
Internal Frame Temperature, TF (°C) temperature derating coefficient
taken from the graph at the left
0.01
1 10 100 1000
Drain-to-Source Voltage, VDS (V)
MOSFET Avalanche Energy Derating Coefficient Curve MOSFET Temperature versus Power Dissipation Curve
100 30
Allowable Power Dissipation, PD1 (W)
Temperature Derating Coefficient (%)
20
60
EAS
15
40
10
20
5 Without heatsink
PD1 = 1.3 W at TA ≤ 25°C
0 0
25 50 75 100 125 150 0 20 40 60 80 100 120 140 160
Channel Temperature, Tch (°C) Ambient Temperature, TA (°C)
0.1
0.01
10-6 10-5 10-4 10-3 10-2 10-1
Time (s)
Typical Application
VOU T
VAC
GND
STR-W6000S
FB/OLP
S/ OCP
D/ST
GND
V CC
BR
1 3 4 5 6 7
Brown-In/Brown-Out function
enabled by connecting BR
terminal to resistive divider.
10.0±0.2
4.2±0.2
Gate burr
2.8±0.2
0.5
4±0.2
7.9±0.2
φ3.2±0.2
16.9±0.3
STR
a
b
2.6±0.1
Dimensions from root
2.8
6-0.74±0.15
5.0±0.5
6-0.65 +0.2
10.4±0.5
R-end
-0.1
(2
-R1
(5.4)
0.45 +0.2
-0.1
6×P1.27±0.15=7.62±0.15
Dimensions between roots 5.08±0.6
Dimensions between roots
Packing Specifications
8.9
+0.3
9.5–0.1
35.0
(15.4)
Side marked
2.85 “ANTISTATIC”
(3.6) +0.3
1.3 –0.2
14.3
Spacer
620
Carton
(side
view) Tube
Tube
125
Spacer 185
Carton dimensions (mm)
Capacity:
36 tubes per carton (3 rows, 12 tubes per row)
50 pieces per tube
1800 pieces maximum per carton
The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.
Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit im-
provements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this
publication is current before placing any order.
When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users
responsibility.
Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and
Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken,
Allegro, or any third party which may result from its use.
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processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your
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equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.
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Anti radioactive ray design is not considered for the products listed herein.
The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given
for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or
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