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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


General Description Features

The AZ4558 consists of two high performance opera- · Internal Frequency Compensation
tional amplifiers. The IC features high gain, high input · Large Signal Voltage Gain with 100 dB Typical
resistance, excellent channel separation, wide range of · High Input Resistance with 5MΩ Typical
operating voltage and internal frequency compensa-
· Maximum Power Supply Voltages: ±18V
tion. It can work with ±18V maximum power supply
· Compatible with NJM 4558
voltage.
· Low Input Voltage Noise with 10nV/ Hz
The AZ4558 is specifically suitable for applications in at 1KHz
differential-in, differential-out as well as in potential-
metric amplifiers and where gain and phase matched Applications
channels are mandatory.
· Audio AC-3 Decoder System
The AZ4558 is available in DIP-8 and SOIC-8 pack-
age. · Audio Amplifier

SOIC-8 DIP-8

Figure 1. Package Types of AZ4558

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Pin Configuration

M Package/P Package
(SOIC-8/DIP-8)

OUTPUT 1 1 8 VCC
INPUT 1- 2 7 OUTPUT 2
INPUT 1+ 3 6 INPUT 2-
VEE 4 5 INPUT 2+

Top View

Figure 2. Pin Configuration of AZ4558

Functional Block Diagram

3.1 KΩ
VCC

150 Ω

- Input

+ Input 25 Ω

Output
25 Ω

10pF

87
pF
7.1 7.1
480 Ω 4.2 KΩ 36 KΩ
KΩ KΩ

VEE

Figure 3. Representative Schematic Diagram of AZ4558 (Each Amplifier)

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Ordering Information

AZ4558 -

Circuit Type E1: Lead Free


Blank: Tin Lead

Package TR: Tape and Reel


M: SOIC-8 Blank: Tube
P: DIP-8

Temperature Part Number Marking ID


Package Packing Type
Range Tin Lead Lead Free Tin Lead Lead Free
AZ4558M AZ4558M-E1 4558M 4558M-E1 Tube
SOIC-8 -40 to 85oC
AZ4558MTR AZ4558MTR-E1 4558M 4558M-E1 Tape & Reel
DIP-8 -40 to 85oC AZ4558P AZ4558P-E1 AZ4558P AZ4558P-E1 Tube

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
VCC +20
Power Supply Voltage V
VEE -20

Input Voltage VI ±15 V


Differential Input Voltage VID ±30 V
Operating Junction Temperature TJ 150 o
C
Storage Temperature Range TSTG -65 to 150 o
C
Lead Temperature (Soldering 10s) TL 260 o
C
DIP-8 800
Power Dissipation PD mW
SOIC-8 500
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.

Recommended Operating Conditions


Parameter Min Max Unit

Supply Voltage ±4 ±18 V

Operating Temperature Range -40 85 o


C

Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Electrical Characteristics
Operating Conditions: VCC=+15V, VEE=-15V, TA=25oC unless otherwise specified.

Parameter Conditions Min Typ Max Unit


Input Offset Voltage 0.5 6 mV
Input Bias Current VCM=0V 25 250 nA
Input Offset Current VCM=0V 2.5 100 nA
Input Resistance 0.3 5 MΩ
RL=∞, Over full temperature 3.3 5.7 mA
Supply Current
range
Large Signal Voltage Gain RL≥2Κ, VO=±10V 85 100 dB
Common Mode Rejection Ratio RS≤10kΩ 80 92 dB
Power Supply Rejection Ratio RS≤10kΩ 80 95 dB
Source V+=1V, V-=0V, VO=2V 50 mA
Output Current
Sink V+=0V, V-=1V, VO=2V 50 mA
RL≥2KΩ ±10 ±13
Output Voltage Swing V
RL≥10KΩ ±12 ±14
Slew Rate RL=2KΩ, CL=100pF 1.3 V/µS
Equivalent Input Noise Voltage Density RS=50Ω, f=1KHz 10 nV Hz

Gain Bandwidth Product RL=2KΩ, f=10KHz 3.4 MHz

Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Typical Performance Characteristics

120 30

100 VCC=15V, VEE=-15V 25


Open Loop Voltage Gain (dB)

Maximum Voltage Swing (V)


o
RL=2KΩ, TA=25 C
VCC=15V, VEE=-15V,
80 20 o
RL=2K, TA=25 C

60 15

40 10

20 5

0 0
1 2 3 4 5 6
2x10
0 1
10
2
10 10
3
10
4
10
5 6
10 10 10 10 10 10 10

Frequency (HZ) Frequency (HZ)

Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency

3
30 10
Equivalent Input Noise Voltage Density

o
28 VCC=15V, VEE=-15V, TA=25 C
VCC=15V, VEE=-15V
Maximum Voltage Swing (V)

26
o
RS=50Ω, TA=25 C
24 10
2
(nV/(HZ) )
0.5

22

20

18 1
10
16

14

12
0
10
0 1 2 3
0.1K 1K 10K 10 10 10 10

Load Resistance (Ω) Frequency (HZ)

Figure 6. Maximum Output Voltage Swing Figure 7. Equivalent Input Noise Voltage Density
vs. Load Resistance vs. Frequency

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Typical Performance Characteristics (Continued)

1.2 80

1.1 VCC=15V VCC=15V


70
VEE=-15V VEE=-15V
1.0
Input Offset Voltage (mV)

60

Input Bias Current (nA)


0.9

0.8 50

0.7 40

0.6
30
0.5
20
0.4

0.3 10

0.2 0
-25 0 25 50 75 100 125 -25 0 25 50 75 100 125
o o
Ambient Temperature ( C) Ambient Temperature ( C)

Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature

Typical Application

VO
10µF

6.2K

20K

8 7 6 5
-
+

AZ4558

+
-
1 2 3 4

D2
15K

20K
20K 20K

D1 10K

VIN

Figure 10. Application of AZ4558 in an AC/DC Converter

Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Mechanical Dimensions

DIP-8 Unit: mm(inch)

0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP

6° 6°

3.200(0.126)
3.710(0.146) 3.600(0.142)
4.310(0.170) 4°

0.510(0.020)MIN
3.000(0.118)
3.600(0.142)

0.204(0.008)
0.254(0.010)TYP 0.360(0.014)
0.360(0.014) 2.540(0.100) TYP 8.200(0.323)
0.560(0.022) 9.400(0.370)
0.130(0.005)MIN

6.200(0.244)
R0.750(0.030) 6.600(0.260)

Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)

Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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Data Sheet

DUAL OPERATIONAL AMPLIFIERS AZ4558


Mechanical Dimensions (Continued)

SOIC-8 Unit: mm(inch)

4.800(0.189)
0.320(0.013)
5.000(0.197) 1.350(0.053)

1.750(0.069)

7° 8°
0.675(0.027)
D
0.725(0.029) 5.800(0.228)
1.270(0.050) 6.200(0.244)
TYP
D
20:1
0.100(0.004) φ 0.800(0.031)
R0.150(0.006)

0.300(0.012)
0.200(0.008)



1.000(0.039)
3.800(0.150)
4.000(0.157)


0.330(0.013) 5°
0.510(0.020)
0.900(0.035) R0.150(0.006)

0.190(0.007)
0.250(0.010)

Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

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cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.

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