Académique Documents
Professionnel Documents
Culture Documents
The AZ4558 consists of two high performance opera- · Internal Frequency Compensation
tional amplifiers. The IC features high gain, high input · Large Signal Voltage Gain with 100 dB Typical
resistance, excellent channel separation, wide range of · High Input Resistance with 5MΩ Typical
operating voltage and internal frequency compensa-
· Maximum Power Supply Voltages: ±18V
tion. It can work with ±18V maximum power supply
· Compatible with NJM 4558
voltage.
· Low Input Voltage Noise with 10nV/ Hz
The AZ4558 is specifically suitable for applications in at 1KHz
differential-in, differential-out as well as in potential-
metric amplifiers and where gain and phase matched Applications
channels are mandatory.
· Audio AC-3 Decoder System
The AZ4558 is available in DIP-8 and SOIC-8 pack-
age. · Audio Amplifier
SOIC-8 DIP-8
1
Data Sheet
M Package/P Package
(SOIC-8/DIP-8)
OUTPUT 1 1 8 VCC
INPUT 1- 2 7 OUTPUT 2
INPUT 1+ 3 6 INPUT 2-
VEE 4 5 INPUT 2+
Top View
3.1 KΩ
VCC
150 Ω
- Input
+ Input 25 Ω
Output
25 Ω
10pF
87
pF
7.1 7.1
480 Ω 4.2 KΩ 36 KΩ
KΩ KΩ
VEE
2
Data Sheet
AZ4558 -
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
3
Data Sheet
4
Data Sheet
5
Data Sheet
120 30
60 15
40 10
20 5
0 0
1 2 3 4 5 6
2x10
0 1
10
2
10 10
3
10
4
10
5 6
10 10 10 10 10 10 10
Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency
3
30 10
Equivalent Input Noise Voltage Density
o
28 VCC=15V, VEE=-15V, TA=25 C
VCC=15V, VEE=-15V
Maximum Voltage Swing (V)
26
o
RS=50Ω, TA=25 C
24 10
2
(nV/(HZ) )
0.5
22
20
18 1
10
16
14
12
0
10
0 1 2 3
0.1K 1K 10K 10 10 10 10
Figure 6. Maximum Output Voltage Swing Figure 7. Equivalent Input Noise Voltage Density
vs. Load Resistance vs. Frequency
6
Data Sheet
1.2 80
60
0.8 50
0.7 40
0.6
30
0.5
20
0.4
0.3 10
0.2 0
-25 0 25 50 75 100 125 -25 0 25 50 75 100 125
o o
Ambient Temperature ( C) Ambient Temperature ( C)
Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature
Typical Application
VO
10µF
6.2K
20K
8 7 6 5
-
+
AZ4558
+
-
1 2 3 4
D2
15K
20K
20K 20K
D1 10K
VIN
7
Data Sheet
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
5°
6° 6°
3.200(0.126)
3.710(0.146) 3.600(0.142)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.254(0.010)TYP 0.360(0.014)
0.360(0.014) 2.540(0.100) TYP 8.200(0.323)
0.560(0.022) 9.400(0.370)
0.130(0.005)MIN
6.200(0.244)
R0.750(0.030) 6.600(0.260)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
8
Data Sheet
4.800(0.189)
0.320(0.013)
5.000(0.197) 1.350(0.053)
7°
1.750(0.069)
8°
7° 8°
0.675(0.027)
D
0.725(0.029) 5.800(0.228)
1.270(0.050) 6.200(0.244)
TYP
D
20:1
0.100(0.004) φ 0.800(0.031)
R0.150(0.006)
0.300(0.012)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
0.330(0.013) 5°
0.510(0.020)
0.900(0.035) R0.150(0.006)
0.190(0.007)
0.250(0.010)
9
http://www.bcdsemi.com
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
MAIN SITE
BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited
- Wafer Fab - IC Design Group
Shanghai SIM-BCD Semiconductor Manufacturing Limited Advanced Analog Circuits (Shanghai) Corporation
800, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673