IRF630

Datasheet

N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET

in a TO‑220 package

Features
TAB Order code VDS RDS(on) max. ID

IRF630 200 V 0.40 Ω 9A

• Extremely high dv/dt capability

3
1
2 • Very low intrinsic capacitance
TO-220 • Gate charge minimized

Applications
D(2, TAB)
• Switching applications

Description
G(1) This Power MOSFET series realized with STMicroelectronics unique STripFET™
process has specifically been designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in advanced high-efficiency isolated
DC-DC converters.
S(3)
AM01475v1_noZen

Product status link

IRF630

Product summary

Order code IRF630

Marking IRF630
Package TO-220
Packing Tube

DS0668 - Rev 10 - December 2018 www.st.com

For further information contact your local STMicroelectronics sales office.
 IRF630
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDDS Drain-source voltage (VGS = 0 V) 200 V

VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V

VGS Gate-source voltage ±20 V

Drain current (continuous) at TC = 25 °C 9 A

ID
Drain current (continuous) at TC = 100 °C 6.5 A

IDM(1) Drain current (pulsed) 36 A

PTOT Total power dissipation at TC = 25 °C 120 W

EAS (2)
Single pulse avalanche energy 110 mJ

dv/dt(3) Drain-body diode dynamic dv/dt ruggedness 5.8 V/ns

Tstg Storage temperature range

-65 to 175 °C
TJ Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. Starting TJ = 25 °C, ID = 4.5 A
3. ISD = 9 A, di/dt = 520 A/μs, VDD = 50 V, TJ < TJmax

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 1.26 °C/W

Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

DS0668 - Rev 10 page 2/13

 IRF630
Electrical characteristics

2 Electrical characteristics

TCASE = 25 °C unless otherwise specified

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA 200 V

VGS = 0 V, VDS = 200 V 1 µA

IDSS Zero gate voltage drain current VGS = 0 V, VDS = 200 V,

100 µA
TC = 125 °C(1)

IGSS Gate body leakage current VDS = 0 V, VGS = 20 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4.5 A 0.29 0.40 Ω

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 370 - pF

VDS = 25 V, f = 1 MHz,
Coss Output capacitance - 77 - pF
VGS = 0 V
Crss Reverse transfer capacitance - 14 - pF

Qg Total gate charge VDD = 160 V, ID = 9 A - 11.6 - nC

Qgs Gate-source charge VGS = 0 to 10 V - 2.2 - nC

(see Figure 13. Test circuit for gate
Qgd Gate-drain charge - 5.5 - nC
charge behavior)

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 100 V, ID = 4.5 A, - 5.6 - ns

RG = 4.7 Ω, VGS = 10 V
(see Figure 12. Test circuit for
tr Rise time resistive load switching times and - 2.6 - ns
Figure 17. Switching time
waveform)

DS0668 - Rev 10 page 3/13

 IRF630
Electrical characteristics

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD(1) Forward on voltage ISD = 9 A, VGS = 0 V - 1.5 V

trr Reverse recovery time ISD = 9 A, di/dt = 100 A/µs, - 118.5 ns

Qrr Reverse recovery charge VDD = 50 V - 393 nC

(see Figure 17. Switching time
IRRM Reverse recovery current - 6.6 A
waveform)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

DS0668 - Rev 10 page 4/13

 IRF630
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

ID GADG221120181106SOA K GADG221120181106ZTH
(A)
δ = 0.5

Operation in this area

tp =10 µs δ = 0.2
101 is limited by RDS(on)
δ = 0.1
tp =100 µs 10 -1
δ = 0.05

100 δ = 0.02
δ = 0.01
TC = 25 °C, tp =1 ms
TJ ≤ 175 °C, 10 -2
Single pulse
10-1 single pulse

tp =10 ms
10-2 10 -3
10-1 100 101 102 VDS (V) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

Figure 3. Output characteristics Figure 4. Transfer characteristics

ID GADG221120181107OCH ID GADG221120181221TCH
(A) (A)
VGS = 8, 9, 10 V 7 V = 10 V
20 DS

VGS = 7 V 6
16
5
VGS = 6 V
12 4
TJ = 25 °C
3
8 VGS = 5 V
2
TJ = 150 °C
4
1 TJ = -55 °C
VGS = 4 V
0 0
0 5 10 15 20 VDS (V) 0 1 2 3 4 5 VGS (V)

Figure 5. Gate charge vs gate-source voltage

Figure 6. Static drain-source on-resistance
VGS GADG221120181107QVG
(V) RDS(on) GADG221120181108RID
(mΩ)
12
VDS = 160 V, ID = 9 A

10 325

8 VGS = 10 V
300
6

4 275

2
250
0 0 1 2 3 4 5 6 7 8 9 ID (A)
0 2 4 6 8 10 12 Qg (nC)

DS0668 - Rev 10 page 5/13

 IRF630
Electrical characteristics (curves)

Figure 8. Normalized gate threshold voltage vs

Figure 7. Capacitance variations
temperature
C GADG221120181107CVR
(pF) VGS(th) GADG221120181109VTH
(norm.)
1.1 ID = 250 µA
10 3
1.0
CISS
0.9
10 2
0.8
COSS 0.7
10 1 CRSS 0.6

0.5
10 0
0 50 100 150 VDS (V) 0.4
-75 -25 25 75 125 175 Tj (°C)

Figure 9. Normalized on-resistance vs temperature Figure 10. Normalized V(BR)DSS vs temperature

RDS(on) GADG221120181109RON V(BR)DSS GADG221120181109BDV

(norm.) (norm.)
1.12
2.6 1.10
VGS = 10 V, ID = 4.5 A
1.08
2.2 1.06
1.04 ID = 1 mA
1.8
1.02
1.00
1.4
0.98
1.0 0.96
0.94
0.6 0.92
0.90
0.2 0.88
-75 -25 25 75 125 175 Tj (°C) -75 -25 25 75 125 175 Tj (°C)

Figure 11. Source-drain diode forward characteristics

VSD GADG221120181110SDF
(V)
TJ = -55 °C
0.9

TJ = 25 °C
0.8

0.7

TJ = 175 °C
0.6

0.5

0.4
0 2 4 6 8 ISD (A)

DS0668 - Rev 10 page 6/13

 IRF630
Test circuits

3 Test circuits

Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 14. Test circuit for inductive load switching and

Figure 15. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 17. Switching time waveform

Figure 16. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD VGS 90%

0 10%
AM01472v1
AM01473v1

DS0668 - Rev 10 page 7/13

 IRF630
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DS0668 - Rev 10 page 8/13

 IRF630
TO-220 type A package information

4.1 TO-220 type A package information

Figure 18. TO-220 type A package outline

0015988_typeA_Rev_22

DS0668 - Rev 10 page 9/13

 IRF630
TO-220 type A package information

Table 7. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

DS0668 - Rev 10 page 10/13

 IRF630

Revision history

Table 8. Document revision history

Date Version Changes

09-Sep-2004 8 Complete version

03-Aug-2006 9 New template, no content change
Part number IRF630FP has been moved to a separate datasheet and the
12-Dec-2018 10 document has been updated accordingly.
Minor text changes

DS0668 - Rev 10 page 11/13

 IRF630
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

DS0668 - Rev 10 page 12/13

 IRF630

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DS0668 - Rev 10 page 13/13