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RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD 0 @ VDD=12.5V, VGG=0V)
• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
Antistatic tray,
RA60H4452M1-501
10 modules/tray
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
T Total Efficiency 40 - - %
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
rd
OUTPUT POWER, TOTAL EFFICIENCY, 2nd , 3 HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
90 11 -5
V DD =12.5V,
85 10 -15 P in =50mW,
OUTPUT POWER Pout (W)
Pout V GG=5V
80 9
TOTAL EFFICIENCY ηT
-25
HARMONICS (dBc)
INPUT VSWR ρin (-)
75 8
V DD =12.5V,
70 P in=50mW, 7 -35
65 V GG=5V 6 2nd
-45
60 5
hT
55 4 -55
50 r in 3 3rd
-65
45 2
40 1 -75
430 440 450 460 470 480 490 500 510 520 530 430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz) FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
50 15 50 15
45 P out 14 45 P out 14
OUTPUT POWER Pout (dBm)
40 Gp 13 40 Gp 13
35 12 35 12
30 11 30 11
25 10 25 10
IDD f=440MHz,
V DD =12.5V,
IDD f=480MHz,
20 9 20 V DD =12.5V, 9
V GG=5V
V GG=5V
15 8 15 8
-10 -5 0 5 10 15 20 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm) INPUT POWER Pin(dBm)
45 14
OUTPUT POWER Pout (dBm)
P out
POWER GAIN Gp(dB)
Gp
40 13
35 12
30 11
25 10
IDD f=520MHz,
20 V DD =12.5V, 9
V GG=5V
15 8
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
100 20 100 20
90 f=440MHz, Pout 18 90 f=480MHz, P out 18
VGG=5V, VGG=5V,
OUTPUT POWER Pout (W)
80 Pin =50mW 16
DRAIN CURRENT I DD(A)
70 14
60 12
50 10
IDD
40 8
30 6
20 4
10 2
0 0
4 5 6 7 8 9 10 11 12 13 14
DRAIN VOLTAGE VDD(V)
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
90 18 90 18
f=440MHz, P out
80 V DD =12.5V,
16 80 f=480Hz, P out 16
V DD =12.5V,
70 P in=50mW 14 70 P in =50mW 14
Pout
70 Pin =50mW 14
DRAIN CURRENT I DD(A)
60 12
50 10
40 IDD 8
30 6
20 4
10 2
0 0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
GATE VOLTAGE VGG (V)
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTLINE
67±1
60±1
(3.26)
49.8±1
2-R2±0.5
18±1
19.4±1
10.7±1
4±0.5
① ② ③ ④ ⑤
15±1
12.5±1 0.6±0.2
17±1
44±1
56±1
7.3±0.5
3.1+0.6/-0.4
(9.9)
(2.6)
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Power Spectrum
Meter
DUT 5 Analyzer
1 2 3 4
Z G =50 Ω Z L =50 Ω
Signal Attenuator Pre- Attenuator Directional Directional Attenuator Power
Generator Amplifier Coupler Coupler Meter
C1 C2
Short Terminated
Adjustable Stub
C1, C2: 4700pF, 22uF in parallel
- + + -
DC Power DC Power
Supply VGG Supply VDD
EQUIVALENT CIRCUIT
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (60W/40% - 60W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 69.6 °C
Tch2 = Tair + 63.6 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA60H4452M1
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO