Si7848DP

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) rDS(on) (Ω) ID (A)
• TrenchFET® Power MOSFETS
• New Low Thermal Resistance Pb-free
0.009 at VGS = 10 V 17
40
PowerPAK® Package with Low 1.07-mm Available

0.012 at VGS = 4.5 V 15 Profile RoHS*

COMPLIANT
• PWM Optimized for Fast Switching
• 100 % Rg Tested

PowerPAK SO-8 APPLICATIONS

• DC/DC Converters
- Synchronous Buck
6.15 mm S
5.15 mm - Synchronous Rectifier
1
S
2
S
3
G
4 D
D
8
D
7
D
6
D G
5

Bottom View
S
Ordering Information: Si7848DP-T1
N-Channel MOSFET
Si7848DP-T1—E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 40
V
Gate-Source Voltage VGS ± 20
TA = 25 °C 17 10.4
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C 13.7 8.3
A
Pulsed Drain Current IDM 50
Avalanche Current L = 0.1 mH IAS 30
Continuous Source Current (Diode Conduction)a IS 4.5 1.67
TA = 25 °C 5 1.83
Maximum Power Dissipationa PD W
TA = 70 °C 3.2 1.2
Operating Junction and Storage Temperature Range TJ, Tstg – 55 to 150
°C
Soldering Recommendations (Peak Temperature)b,c 260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 sec 20 25
Maximum Junction-to-Ambienta RthJA
Steady State 55 68 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 1.8 2.2
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71450 www.vishay.com

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Si7848DP
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 40 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C 5
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 14 A 0.0075 0.009
Drain-Source On-State Resistancea rDS(on) Ω
VGS = 4.5 V, ID = 12 A 0.0095 0.012
Forward Transconductancea gfs VDS = 15 V, ID = 14 A 50 S

Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 V

Dynamicb
Total Gate Charge Qg 18.5 28
Gate-Source Charge Qgs VDS = 20 V, VGS = 5 V, ID = 14 A 6 nC
Gate-Drain Charge Qgd 7.5
Gate Resistance Rg 0.1 0.8 1.1 Ω
Turn-On Delay Time td(on) 15 30
Rise Time tr VDD = 20 V, RL = 20 Ω 10 20
Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 50 100 ns
Fall Time tf 20 40
Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 A/µs 30 60
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless noted

50 50

VGS = 10 thru 4 V
40 40
I D - Drain Current (A)

I D - Drain Current (A)

30 30

3V
20 20
TC = 125 °C

10 10
25 °C
2 thru 0 V - 55 °C
0 0
0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 71450

2 S-52554-Rev. D, 19-Dec-05
 Si7848DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.020 3000
r DS(on) - On-Resistance ( Ω )

2500
0.016

C - Capacitance (pF)
Ciss
2000
0.012
VGS = 4.5 V
1500

0.008 VGS = 10 V
1000

0.004 Coss
500 Crss

0.000 0
0 10 20 30 40 50 0 8 16 24 32 40

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 2.0
VDS = 20 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)

ID = 14 A ID = 14 A
8 1.6
r DS(on) - On-Resistance
(Normalized)

6 1.2

4 0.8

2 0.4

0 0.0
0 7 14 21 28 35 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

50 0.04

TJ = 150 °C
ID = 14 A
r DS(on) - On-Resistance ( Ω )

0.03
I S - Source Current (A)

10

0.02

TJ = 25 °C
0.01

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 71450 www.vishay.com

S-52554-Rev. D, 19-Dec-05 3
Si7848DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted

0.6 100

0.4
80
0.2 ID = 250 μA
V GS(th) Variance (V)

Power (W)
0.0 60

- 0.2

- 0.4 40

- 0.6
20
- 0.8

- 1.0 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (sec)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 55 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1

0.1

0.05

0.02
Single Pulse

0.01
10 - 4 10 - 3 10 - 2 10 - 1 1 10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71450.

www.vishay.com Document Number: 71450

4 S-52554-Rev. D, 19-Dec-05
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Vishay

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Revision: 18-Jul-08 1