Diode DC Characteristics and Rectifiction
Bellosillo, Joule F.
jrfbellosillo@gmail.com
Pabilona, Czarina Faye M.
czapabilona@gmail.com
ABSTRACT
The experiment shows how diodes and
transistors observe LED illumination. A diode
circuit was utilized, as well as a multimeter to
display and define the diode dc characteristic
curve. Semiconductor diodes conduct at forward
bias based on the results. Overall, the values
acquired in this experiment are close , if not
similar, to the characteristic curve given for the
diode characteristic test.
KEYWORDS
Transistor, Diode, LED, forward bias, reverse bias,
characteristic curve
INTRODUCTION
Semiconductors are defined to have
an electrical conductivity value between that
of an insulator and a conductor. Such
materials can be produced from pure
elements or compounds--prime example are
ceramics. These semiconductors have
intrinsic and extrinsic properties.
Changes in these properties can be
done--for an instance, a semiconductor’s
material conductivity can be changed
through a process called doping. It is
performed by adding impurities that causes
considerable impacts to pure semiconductors.
Semiconductor materials subject to the
method of doping are called extrinsic
materials. On the other hand, there are
intrinsic materials which are semiconductor
materials refined thoroughly to lower the
amount of impurities to a very small level.
Kinds of extrinsic materials are the
P-type and N-type material. The P-type
material is produced by doping a purified
Silicon or Germanium crystal and impurity
atoms that have trivalent electrons like
boron, indium, and gallium. P-types are the
“acceptor atoms”. An n-type material is
produced by introducing impurities that
have pentavalent electrons like phosphorus,
arsenic and antimony. The N-types are the
“donor atoms”.
The n-type and p-type material,
when combined, forms a diode in
semiconductors. Electrons flow momentarily
from the N to the P side when said materials
are associated together. The outcome is a
third region between them, which is a two
terminal diode that is formed when the leads
are attached to the ends of the n-type and p-
type material. In this region, carriers without
charges create what is called an area of
depletion. There is also a so-called bias in
diodes and it is implemented in the external
voltage on the terminal of the diode.
The diode is said to be forward-
biased when the n-type material and p-type
material are attached to the negative and
positive terminals of the external source.
This reduces the depletion region and acts as
a very low resistance element, making it
simple for the current to flow through it. The
diode is said to be reversed-biased when the
n-type material and p-type material are
attached to the positive and negative
terminals of an external source. Reverse-
biased diodes are like high resistance
elements and will basically prevent the
current flow from a source.
RESULTS & DISCUSSIONS
In a diode, there is a the positive
terminal (anode) and a negative terminal
(cathode). Diodes can be tested using an
Ohmmeter, which can also indicate whether
the diode is conducting or not conducting.
The meter reading takes place in the diode
circuit in a forward bias configuration when
the red meter probe is in the CR1 anode.
And because the meter reading with the red
meter probe is not performing in the CR1
cathode, it is apparently in reverse bias as its
barrier potential increases.
R2 determines the amount of current
through the forward biased diode. The
current through R2 is 2.6x10-3A, which was
calculated using Ohm’s Law. The current
through CR2 is 0.71x10-3A and was
determined using the value of the current
through R2.
The values of resistor voltage drop
(VR2), calculated circuit current (I), and
calculated diode voltage drop (VD) were
measured by varying the positive variable
voltage source from 0.25 Vdc to 10 Vdc.
Data from the diode voltage drop calculation
are shown in Table 1.
Table 1. Calculated Diode Voltage Drop

Figure 1. Forward and reverse bias in a diode circuit

The experiment also made use of a

diode and 1/2 wave rectification block and
VA was adjusted to -10 Vdc. The voltages
across R1 and R2 were measured. The
voltage across R1 is 9.33 V and is forward
biased, while the voltage in reversed biased
is 0.37 V which is the voltage across R2.

Figure 3. CR2 characteristic curve

Figure 2. Diode DC Bias (VA positive)

 Based on the VD, forward biased
was indicated at point 0.43. The diode
forward voltage does not remain the same
after the diode reaches full conduction.

It is now possible to distinguish the

bias configuration looking at the results
from Table 1 to Figure 3. 0.575 V is the
resulting value for forward voltage and is
almost constant for the adjusted circuit
changes.

CONCLUSIONS

A diode's reverse bias will result in

an open path circuit resulting in a (non-
conducting) zero current flow. On the other
hand, the forward bias of the diode will
result in the conductive configuration of the
circuit. The current flow will also increase
gradually by increasing the voltage in a
forward bias configuration due to the
incremental increase in voltage across the
diode. Current will flow steadily after
overcoming the required voltage in the diode.

REFERENCES

Morris, M.J. (2003). Semiconductor Theory.

Retrieved from http://www.science-
campus.com/engineering/electronics/semico
nductor_t heory/semiconductor_1.html

N. A. (n.a). Diode Theory. Retrieved from

https://mcl.blackboard.com/bbcswebdav/pid
-293618- dt-content-rid-
15382044_1/courses/EE105.C03.1T.18.19/
Module% 205%20-%20Diode%20Theory-
v2.pdf

Ohm’s Law - How Voltage, Current, and

Resistance Relate (n.a.). Retrieved from
https://www.allaboutcircuits.com/textbook/d
irect- current/chpt-2/voltage-current-
resistance-relate/