7MBR25NE120 IGBT Modules

IGBT MODULE
1200V / 25A / PIM

Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure

· Converter Diode Bridge Dynamic Brake Circuit

Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier

· Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Ra ting Unit
Collector-Emitter voltage VCES V
1200
Gate-Emitter voltage VGES V
IC ±20 A
Inverter
Continuous 25
1ms
Collector current ICP 50 A
-IC 25 A
PC 200 W
Collector power disspation 1 device
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current IC 15 A
Continuous
Brake 1ms
ICP 30 A
Collector power disspation PC 1 device 120 W
V
Repetitive peak reverse voltage 1200
Average forward current IF(AV) 1 A
Surge current IFSM 10ms 50 A
VRRM V
Repetitive peak reverse voltage 1600
Non-Repetitive peak reverse voltage VRSM
Converter 1700 V
Average output currentIO
50Hz/60Hz sine wave 25 A
Surge current (Non-Repetitive)IFSM
Tj=150°C, 10ms 320 A
I²t(Non-Repetitive)
Tj=150°C, 10ms 512
A²s
°C
Operating junction temperature Tj +150
°C
Storage temperature Tstg -40 to +125
Isolation voltage AC 2500
Viso AC : 1 minute V
N·m
Mounting screw torque 1.7 *1
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
IGBT Module 7MBR25NE120

Electrical characteristics (Tj=25°C unless without specified)

Item Symbol Condition Characteristics Unit
Typ.Max.
Min.
Zero gate voltage collector current ICES VCE=1200V, VGE=0V 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 20 µA
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=25mA
4.5 7.5 V
VCE(sat)
3.3 V
InverterCollector-Emitter saturation voltage VGE=15V, Ic=25A
V
3.0
(IGBT)Collector-Emitter voltage -VCE -Ic=25A
Input capacitance Cies VGE=0V, VCE=10V, f=1MHz
4000 pF
ton
µs
Switching time VCC=600V 1.2 µs
tr IC=25A 0.6
toff VGE=±15V 1.5
tf µs
µs
RG=51 ohm 0.5 µs
trr IF=25A 0.35
Reverse recovery time of FRD
ICES VCES=1200V, VGE=0V 1.0
Zero gate voltage collector current
IGES mA
µA
Gate-Emitter leakage current VCE=0V, VGE=±20V 0.1
Brake (IGBT) V
Collector-Emitter saturation voltage VCE(sat) IC=15A, VGE=15V 3.3
Switching time ton VCC=600V 0.8
tr µs
µs
IC=15A 0.6 µs
toff VGE=±15V 1.5
tf RG=82 ohm 0.5
IRRM µs
Brake(FWD)
mA
Reverse current VR=1200V 1 µs
Reverse recovery time trr 0.6
Forward voltage VFM 1.4
Converter
IRRM IF=25A V
mA
Reverse current VR=1600V 1.0

Thermal Characteristics
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT 0.63
Inverter FRD 1.70
Thermal resistance ( 1 device ) Rth(j-c)
Brake IGBT 1.04 °C/W
Converter Diode 3.40
With thermal compound
Contact thermal resistance * Rth(c-f) 0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

* NLU (Over current Limiting circuit)

IGBT Module 7MBR25NE120
Characteristics (Representative)
Inverter

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C

60 60

50 50

40 current :
Collector 40 current :
Collector
Ic [A] Ic [A]

30 30

20 20

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Tj=125°C

10 10

VCE [V] VCE [V]

8 8

Collector-Emitter Collector-Emitter
voltage : voltage :
6 6

4 4

2 2

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current Switching time vs. Collector current
Vcc=600V, RG=51 ohm, VGE=±15V, Tj=25°C Vcc=600V, RG=51 ohm, VGE=±15V, Tj=125°C

1000

1000

Switching time : Switching time :

ton, tr, toff, tf [n ton, tr, toff, tf [n
sec.] sec.]

100
100

10 10
0 10 20 30 40 50 0 10 20 30 40 50
Collector current : Ic [A] Collector current : Ic [A]
IGBT Module 7MBR25NE120

Switching time vs. RG Dynamic input characteristics

Vcc=600V, Ic=25A, VGE=±15V, Tj=25°C Tj=25°C

1000 25

Switching time : 800

Collector-Emitter 20
ton, tr, toff, tf [n voltage : VCE [V]
sec.]

1000 Gate-Emitter
600 15 voltage : VGE [V]

400 10

200 5
100

0 0
0 100 200 300 400 500
100
Gate resistance : RG [ohm] Gate charge : Qg [nC]

Forward current vs. Forward voltage Reverse recovery characteristics

trr, Irr, vs. IF
VGE=0V

60

50
Reverse recovery
current : Irr
100
[A]Reverse recovery
40 time : trr [n sec.]
Forward current :
IF [A]

30

10
20

10

1
0
0 1 2 3 4 5 0 10 20 30 40 50

Forward voltage : VF [V] Forward current : IF [A]

Reversed biased safe operating area

Transient thermal resistance ><+VGE=15V, -VGE < 15V, Tj = 125°C, RG = 51
ohm=
250

Thermal 200
resistance : Rth (j-
1
c) [°C/W]
Collector current :
Ic [A]
150

100
0.1

50

0.01 0
0.001 0.01 0.1 1 0 200 400 600 800 1000 1200
Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]
IGBT Module 7MBR25NE120

Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage

Vcc=600V, RG=51 ohm, VGE=±15V Tj=25°C
10

10

Switching loss :
Eon, Eoff,
8 Err [mJ Capacitance :
/cycle] Cies, Coes, Cres
[nF]

6
1

2 0.1

0
0 10 20 30 40 50 0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]

Converter Diode
Forward current vs. Forward voltage

30

25

20
Forward current :
IF [A]

15

10

0
0 0.5 1.0 1.5 2.0
Forward voltage : VF [V]
IGBT Module 7MBR25NE120
Brake

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C

30 30

Collector current : Collector current :

Ic [A] Ic [A]
20 20

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Tj=125°C

10 10

VCE [V] VCE [V]

8 8

Collector-Emitter Collector-Emitter
voltage : voltage :
6 6

4 4

2 2

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current Switching time vs. Collector current
Vcc=600V, RG=82 ohm, VGE=±15V, Tj=25°C Vcc=600V, RG=82 ohm, VGE=±15V, Tj=125°C

1000

1000

Switching time : Switching time :

ton, tr, toff, tf [n ton, tr, toff, tf [n
sec.] sec.]

100
100

10 10
0 10 20 30 0 10 20 30
Collector current : Ic [A] Collector current : Ic [A]
IGBT Module 7MBR25NE120

Switching time vs. RG Dynamic input characteristics

Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C Tj=25°C

1000 25

Switching time : 800

Collector-Emitter 20
ton, tr, toff, tf [n voltage : VCE [V]
sec.]

1000 Gate-Emitter
600 15 voltage : VGE [V]

400 10

200 5
100

0 0
100 0 50 100 150 200 250 300
Gate resistance : RG [ohm] Gate charge : Qg [nC]

Reversed biased safe operating area Switching loss vs. Collector current
<>+VGE=15V, -VGE = 15V, Tj < 125°C, RG = 82 ohm= Vcc=600V, RG=82 ohm, VGE=±15V

6
160

Switching loss :
5
Eon, Eoff, Err [mJ
120
/cycle]

Collector
100 current :
Ic [A] 4

80
3

60

2
40

1
20

0 0
0 200 4006008001000 1200 0 5 10 15 20 25 30
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]

Capacitance vs. Collector-Emitter voltage

Tj=25°C

10
Capacitance :
Cies, Coes, Cres
[nF]

0.1

0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
IGBT Module 7MBR25NE120

Outline Drawings, mm
 This contact:
For more information, datasheet has been download from:

www.datasheetcatalog.com
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370 Datasheets for electronics components.
972-733-1700
972-381-9991 Fax
http://www.collmer.com