FMMT2222 SOT23 NPN SILICON PLANAR FMMT2222

FMMT2222A SWITCHING TRANSISTORS FMMT2222A

ISSUE 3 – FEBRUARY 1996
FEATURES
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
* Fast switching
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
PARTMARKING DETAILS E
MIN. MAX. MIN. MAX. C
Transition fT 250 300 MHz IC=20mA, VCE=20V FMMT2222 – 1BZ FMMT2222A – 1P
Frequency f=100MHz FMMT2222R – 2P FMMT2222AR – 3P
Output Capacitance Cobo 8 8 pF VCB=10V, IE=0, COMPLEMENTARY TYPES B
f=140KHz FMMT2222 – FMMT2907
Input Capacitance Cibo 30 25 pF VEB=0.5V, IC=0 FMMT2222A – FMMT2907A
f=140KHz
Delay Time td 10 10 ns VCC=30V, VBE(off)=0.5V ABSOLUTE MAXIMUM RATINGS.
Rise Time tr 25 25 ns IC=150mA, IB1=15mA PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
(See Delay Test Circuit)
Storage Time ts 225 225 ns VCC=30V, IC=150mA Collector-Base Voltage VCBO 60 75 V
Fall Time tf 60 60 ns IB1= IB2=15mA Collector-Emitter Voltage VCEO 30 40 V
(See Storage Test
Circuit) Emitter-Base Voltage VEBO 5 6 V
Continuous Collector Current IC 600 mA
DELAY AND RISE – TEST CIRCUIT Power Dissipation at Tamb=25°C Ptot 330 mW
+30V Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

Generator rise time <2ns ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Pulse width (t1)<200ns 200Ω PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
Duty cycle = 2% MIN. MAX. MIN. MAX.
Collector-Base V(BR)CBO 60 75 V IC=10µA, IE=0
Breakdown Voltage
619Ω
9.9V Collector-Emitter V(BR)CEO 30 40 V IC=10mA, IB=0
Breakdown Voltage
Scope:
Emitter-Base V(BR)EBO 5 6 V IE=10µA, IC=0
0 Rin > 100 kΩ Breakdown Voltage
0.5V
Cin < 12 pF Collector Cut-Off ICBO 10 nA VCB=50V, IE=0
Rise Time < 5 ns Current 10 µA VCB=60V, IE=0
10 nA VCB=50V, IE=0, Tamb=150°C
10 µA VCB=60V, IE=0, Tamb=150°C
STORAGE TIME AND FALL TIME – TEST CIRCUIT Emitter Cut-Off IEBO 10 10 nA VEB=3V, IC=0
Current
+30V
Collector-Emitter ICEX 10 10 nA VCE=60V, VEB(off)=3V
=100µs Cut-Off Current
<5ns 200Ω
Collector-Emitter VCE(sat) 0.3 0.3 V IC=150mA, IB=15mA*
+16.2 V Saturation Voltage 1.0 1.0 V IC=500mA, IB=50mA*
Base-Emitter VBE(sat) 0.6 2.0 0.6 1.2 V IC=150mA, IB=15mA*
Saturation Voltage 2.6 2.0 V IC=500mA, IB=50mA*
0 1KΩ Static Forward hFE 35 35 IC=0.1mA, VCE=10V*
Current Transfer 50 50 IC=1mA, VCE=10V
Scope: Ratio 75 75 IC=10mA, VCE=10V*
R > 100 kΩ
in 35 35 IC=10mA, VCE=10V, Tamb=-55°C
1N916 C < 12 pF
in 100 300 100 300 IC=150mA, VCE=10V*
-13.8 V 50 50 IC=150mA, VCE=1V*
Rise Time < 5 ns
-3V 30 40 IC=500mA, VCE=10V*
=500µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Duty cycle = 2% Spice parameter data is available upon request for this device
 FMMT2222 SOT23 NPN SILICON PLANAR FMMT2222
FMMT2222A SWITCHING TRANSISTORS FMMT2222A
ISSUE 3 – FEBRUARY 1996
FEATURES
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
* Fast switching
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
PARTMARKING DETAILS E
MIN. MAX. MIN. MAX. C
Transition fT 250 300 MHz IC=20mA, VCE=20V FMMT2222 – 1BZ FMMT2222A – 1P
Frequency f=100MHz FMMT2222R – 2P FMMT2222AR – 3P
Output Capacitance Cobo 8 8 pF VCB=10V, IE=0, COMPLEMENTARY TYPES B
f=140KHz FMMT2222 – FMMT2907
Input Capacitance Cibo 30 25 pF VEB=0.5V, IC=0 FMMT2222A – FMMT2907A
f=140KHz
Delay Time td 10 10 ns VCC=30V, VBE(off)=0.5V ABSOLUTE MAXIMUM RATINGS.
Rise Time tr 25 25 ns IC=150mA, IB1=15mA PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
(See Delay Test Circuit)
Storage Time ts 225 225 ns VCC=30V, IC=150mA Collector-Base Voltage VCBO 60 75 V
Fall Time tf 60 60 ns IB1= IB2=15mA Collector-Emitter Voltage VCEO 30 40 V
(See Storage Test
Circuit) Emitter-Base Voltage VEBO 5 6 V
Continuous Collector Current IC 600 mA
DELAY AND RISE – TEST CIRCUIT Power Dissipation at Tamb=25°C Ptot 330 mW
+30V Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

Generator rise time <2ns ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Pulse width (t1)<200ns 200Ω PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
Duty cycle = 2% MIN. MAX. MIN. MAX.
Collector-Base V(BR)CBO 60 75 V IC=10µA, IE=0
Breakdown Voltage
619Ω
9.9V Collector-Emitter V(BR)CEO 30 40 V IC=10mA, IB=0
Breakdown Voltage
Scope:
Emitter-Base V(BR)EBO 5 6 V IE=10µA, IC=0
0 Rin > 100 kΩ Breakdown Voltage
0.5V
Cin < 12 pF Collector Cut-Off ICBO 10 nA VCB=50V, IE=0
Rise Time < 5 ns Current 10 µA VCB=60V, IE=0
10 nA VCB=50V, IE=0, Tamb=150°C
10 µA VCB=60V, IE=0, Tamb=150°C
STORAGE TIME AND FALL TIME – TEST CIRCUIT Emitter Cut-Off IEBO 10 10 nA VEB=3V, IC=0
Current
+30V
Collector-Emitter ICEX 10 10 nA VCE=60V, VEB(off)=3V
=100µs Cut-Off Current
<5ns 200Ω
Collector-Emitter VCE(sat) 0.3 0.3 V IC=150mA, IB=15mA*
+16.2 V Saturation Voltage 1.0 1.0 V IC=500mA, IB=50mA*
Base-Emitter VBE(sat) 0.6 2.0 0.6 1.2 V IC=150mA, IB=15mA*
Saturation Voltage 2.6 2.0 V IC=500mA, IB=50mA*
0 1KΩ Static Forward hFE 35 35 IC=0.1mA, VCE=10V*
Current Transfer 50 50 IC=1mA, VCE=10V
Scope: Ratio 75 75 IC=10mA, VCE=10V*
R > 100 kΩ
in 35 35 IC=10mA, VCE=10V, Tamb=-55°C
1N916 C < 12 pF
in 100 300 100 300 IC=150mA, VCE=10V*
-13.8 V 50 50 IC=150mA, VCE=1V*
Rise Time < 5 ns
-3V 30 40 IC=500mA, VCE=10V*
=500µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Duty cycle = 2% Spice parameter data is available upon request for this device
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