Unit wise Questions Marks

Unit-I

1 a) Explain the semiconductors, insulators and metals classification using energy 5M

band diagrams.
b) Find the concentration of holes and electrons in a p-type germanium at 300K, if the
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conductivity is 100Ω-cm.mobility of holes in germanium µp = 1800cm2/V- sec.
2. a) Show that the Fermi energy level lies in the centre of forbidden energy band for
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an intrinsic semiconductor? Derive.
b) Find the concentration of holes and electrons in a p-type silicon at 3000 K assuming
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resistivity as 0.02 Ω – cm. Assume µp = 476 m2/V-sec, ni = 1.45 × 1010 per cm3.
3. a) Elaborate how Hall Effect is used to measure mobility and conductivity? Derive
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relevant expressions
-3 -
b) The resistivity of doped silicon material is 9x10 m. The Hall coefficient is 3.6x10
4 3
m /C assuming single carrier conduction; Find the mobility and density of charge carriers. 3M
e= 1.602x10-19 Colomb.
4.a) Derive expression for the continuity equation. 7M
b) Calculate resistivity of intrinsic germanium at 300 K. Assume ni = 2× 10 13 /cm3 , µn= 3M
3800 cm3/V and µp= 1800cm3/V
5.a) What is meant by N-type and P-type impurities in a semiconductor? Explain 5M
b) Explain the Fermi-Dirac Function for a semiconductor 5M
6.a) Draw and explain VI Characteristics of PN Junction diode under Forward and Reverse
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bias
b) Find the value of DC resistance and AC resistance of a Germanium junction diode
at 25 C with reverse saturation current, Io = 25μA and at an applied voltage of 0.2V across the 5M
diode?
7.a) Derive the current equation of PN Junction 5M
b) Determine the values of forward current in the case
of P-N junction diode, with I0=10 µA Vf=0.8V at 5M
T=300 K.Assume silicon diode and η=2
8.a) With a neat diagram explain the working of an open circuited PN junction with
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relevant diagrams
b) The current flowing in a germanium PN junction diode at room temperature is 9x10-
7A when the large reverse voltage is applied. Calculate the current flowing when 0.1V 5M
forward bias is applied
Unit-II
1.a) Explain the construction and working of Zener diode. 10M
b)For a Zener diode circuit shown in below figure. Determine VL,VZ,IZ & R

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2.a) Draw and Explain the Half-wave rectifier with relevant waveforms. 4M
b) A Half wave rectifier has a load of 3.5kΩ , If the diode resistance and secondary
coil resistance together have a resistance of 800Ω and input voltage has a signal
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voltage of peak value 240V calculate i) Peak , average and rms value of current
flowing ii) dc power output iii)ac power input iv) efficiency of the rectifier.
 3. a) Explain the construction and working of Full wave rectifier with necessary 5M
waveforms
b) Define transformer utilization factor and derive its
expression for 5M
i) Half wave rectifier ii) Full wave rectifier.
4. A Full-wave rectifier is connected with an inexpensive capacitor filter, derive
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expression for the ripple factor and draw relevant waveforms
5. A Full-wave rectifier is connected with an inductor filter, derive expression for the ripple
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factor and draw relevant waveforms
6. List the types of filters used in rectification & compare various filter circuits in terms of
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ripple factors
7. a) Explain the construction and working of photodiode? 5M
b). Draw the block diagram of a power supply. Explain in detail about different elements
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in power supply.
8.a) A Full wave rectifier circuit is fed from a transformer having a center tapped
secondary winding. The rms voltage from either end of secondary to center tap is 30 V, if
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diode forward resistance is 2Ω and half secondary resistance is 8Ω for a load of 1 KΩ,
Calculate, i).Power delivered to load ii). Efficiency iv).Ripple factor
b). Why filter circuit is necessary with rectifiers? Give the list of different filters used in
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rectifier
UNIT-III
1.a) Define the different switching times of a transistor with suitable collector current
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versus time characteristics
b). Explain how a transistor can be used as a switch. 5M
2. a) Derive the relation among α, β and γ? 5M
b) What is thermal runaway in transistors? Obtain the condition for
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thermal stability in transistors?
3.a)Draw the input & output characteristics of a NPN transistors in CB configuration &
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explain
b)Determine the collector current and emitter current for transistor with α = 0.99 and
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ICBO = 490μA when the base current is 19μA?
4.a) Explain the working of a PNP transistor with a neat diagram 5M
b). With a neat diagram explain the various current components in an NPN bipolar
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junction transistor & hence derive general equation for collector current, IC?
 Unit wise Questions Marks
Unit-I

1. Derive the expression for the output of a low pass circuit excited by a step input 10M
for different time constants and derive the expression for rise time
2. Draw high-pass RC circuit. Explain its response to a square-wave input for
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different time constants and derive the expression for percentage tilt
3. a) Prove that a low pass circuit acts as an integrator and high pass circuit acts as
a differentiator. 4M

b) What is an attenuator? How can an uncompensated attenuator are modified as

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a compensated attenuator.

4. a) Derive the expression for the output response of High pass excited by a
Sinusoidal signal. 8M

b) Define Rise time? Give the relations between rise time and bandwidth? 2M

5. a) Explain in detail low pass and high pass circuits 5M

b) An RC low-pass filter is fed with a symmetrical square wave. The peak-to-
peak amplitude of the input waveform is 10 V and its average value is zero. It is
given that RC=T/2 where T is the period of the square wave. Determine the 5M
peak-to-peak amplitude of the output waveform.

6. Derive an expression for the output voltage levels for square wave of a low pass
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circuit
7. Explain the response of RC low pass circuit for exponential input signal 10M
8. Draw the different output waveforms of a RC Low Pass circuit when it is
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applied with Differentinputslike(a)Step-voltageinput(b)pulse input C) Square
input

UNIT-II
1. State and prove clamping circuit theorem 10M
2. Explain in detail positive and negative peak limiters with & without reference
voltages 10M
3. a) Draw the circuit diagram of an emitter-coupled clipping circuit and draw its
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transfer characteristic indicating all intercepts, slopes and voltage levels.
b) Express the meaning of Transmission and
Clipping regions of clippers 2M
4.a) With the help of neat Circuit diagram, explain the working of Transistor
Clipper? 5M
b)A 10HZ symmetrical square wave whose peak-to-peak amplitude is 2V is
applied to a High pass RC circuit whose lower 3-db frequency is 5HZ. Calculate 5M
and sketch the output waveform?
5.a) Explain the working of a two-level diode clipper with the help of circuit 5M
diagram waveform and transfer characteristics
b) Design the value of Resistance R in clipper circuit when forward Resistance
of diode is 100Ω and reverse resistance of diode is 100KΩ 5M
6.a) Mention the effects of diode characteristics on clamping voltage. 5M
b) A 100V peak square wave with an average value of 0V is to be negatively
clamped at 25V. Draw the output waveforms?

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7.a) With the help of neat Circuit diagram, explain the working of Transistor
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Clipper
b). Design a diode clamper circuit to clamp the positive peaks of the inputsignal
at zero level. The frequency of the input signal is 500 Hz? 5M
8.a) Draw the basic circuit diagram of a DC restorer circuit and explain its
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operation. Sketch the output wave form for a sinusoidal input.
b).Explain in brief about Practical Clamping? 3M
UNIT-III
1.Define the different switching times of a transistor with suitable collector current
versus time characteristics 10M
2.a) Explain how a transistor can be used as a switch. 8M
b) List the temperature dependence of Transistor saturation parameters. 2M
3.a).Design a transistor inverter circuit with the following specifications: -
VBB=VCC=10V, Ic(sat)=10mA,hFE(min)=50.The input varies between 0 to 5V. 5M
Assume typical junction voltages are neglected.
b).Explain with the help of suitable waveforms the
switching times of a diode switch 5M
4.a) Explain about diode forward and reverse recovery times 5M
b). Design of the transistor Switch 5M