BD135/137/139

BD135/137/139

Medium Power Linear and Switching

Applications
• Complement to BD136, BD138 and BD140 respectively

1 TO-126
1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD135 45 V
: BD137 60 V
: BD139 80 V
VCEO Collector-Emitter Voltage : BD135 45 V
: BD137 60 V
: BD139 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 1.5 A
ICP Collector Current (Pulse) 3.0 A
IB Base Current 0.5 A
PC Collector Dissipation (TC=25°C) 12.5 W
PC Collector Dissipation (Ta=25°C) 1.25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: BD135 IC = 30mA, IB = 0 45 V
: BD137 60 V
: BD139 80 V
ICBO Collector Cut-off Current VCB = 30V, IE = 0 0.1 µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA
hFE1 DC Current Gain : ALL DEVICE VCE = 2V, IC = 5mA 25
hFE2 : ALL DEVICE VCE = 2V, IC = 0.5A 25
hFE3 : BD135 VCE = 2V, IC = 150mA 40 250
: BD137, BD139 40 160
VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 0.5 V
VBE(on) Base-Emitter ON Voltage VCE = 2V, IC = 0.5A 1 V

hFE Classification
Classification 6 10 16
hFE3 40 ~ 100 63 ~ 160 100 ~ 250

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BD135/137/139
Typical Characteristics

100 500
VCE = 2V

VCE(sat)[mV], SATURATION VOLTAGE

90 450

IC = 20 IB
80 400
hFE, DC CURRENT GAIN

70 350

IB
60

IC = 10
300

50 250

40 200

30 150

20 100

10 50

0 0
10 100 1000 1E-3 0.01 0.1 1 10

IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

1.1 10

1.0
VBE[V], BASE-EMITTER VOLTAGE

IC MAX. (Pulsed) 10us

t)
(sa
IC[A], COLLECTOR CURRENT

0.9 V BE 0 I B
1 IC MAX. (Continuous)
IC =

1m
0.8 100us

s
) 1
(on
V BE V
=5

DC
0.7
V CE
0.6

0.5
0.1
0.4

0.3

BD135

BD139
BD137
0.2

0.1 0.01
1E-3 0.01 0.1 1 10 1 10 100

IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area

20.0

17.5
PC[W], POWER DISSIPATION

15.0

12.5

10.0

7.5

5.0

2.5

0.0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BD135/137/139
Package Demensions

TO-126
±0.10

8.00 ±0.30 3.25 ±0.20

3.90

±0.20
14.20MAX

11.00
ø3.20 ±0.10

(1.00) (0.50)
0.75 ±0.10

1.75 ±0.20
1.60 ±0.10
±0.20
±0.30

0.75 ±0.10
16.10
13.06

#1 +0.10
2.28TYP 2.28TYP 0.50 –0.05
[2.28±0.20] [2.28±0.20]

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

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result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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any time without notice in order to improve design.

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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E