ON Semiconductor

BC337,
Amplifier Transistors BC337-16,
NPN Silicon BC337-25,
BC337-40,
MAXIMUM RATINGS
Rating Symbol BC337 BC338 Unit
BC338-25
Collector–Emitter Voltage VCEO 45 25 Vdc
Collector–Base Voltage VCBO 50 30 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current – Continuous IC 800 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C 1
2
Total Device Dissipation @ TC = 25°C PD 1.5 Watt 3
Derate above 25°C 12 mW/°C
CASE 29–04, STYLE 17
Operating and Storage Junction TJ, Tstg –55 to +150 °C
TO–92 (TO–226AA)
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit COLLECTOR
Thermal Resistance, Junction to Ambient RJA 200 °C/W 1

Thermal Resistance, Junction to Case RJC 83.3 °C/W

2
BASE

3
EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 10 mA, IB = 0) BC337 45 – –
BC338 25 – –
Collector–Emitter Breakdown Voltage V(BR)CES Vdc
(IC = 100 µA, IE = 0) BC337 50 – –
BC338 30 – –
Emitter–Base Breakdown Voltage V(BR)EBO 5.0 – – Vdc
(IE = 10
A, IC = 0)
Collector Cutoff Current ICBO nAdc
(VCB = 30 V, IE = 0) BC337 – – 100
(VCB = 20 V, IE = 0) BC338 – – 100
Collector Cutoff Current ICES nAdc
(VCE = 45 V, VBE = 0) BC337 – – 100
(VCE = 25 V, VBE = 0) BC338 – – 100
Emitter Cutoff Current IEBO – – 100 nAdc
(VEB = 4.0 V, IC = 0)

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

October, 2001 – Rev. 2 BC337/D
 BC337, BC337–16, BC337–25, BC337–40, BC338–25

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE –
(IC = 100 mA, VCE = 1.0 V) BC337 100 – 630
BC337–16 100 – 250
BC337–25/BC338–25 160 – 400
BC337–40 250 – 630
(IC = 300 mA, VCE = 1.0 V) 60 – –
Base–Emitter On Voltage VBE(on) – – 1.2 Vdc
(IC = 300 mA, VCE = 1.0 V)
Collector–Emitter Saturation Voltage VCE(sat) – – 0.7 Vdc
(IC = 500 mA, IB = 50 mA)

SMALL–SIGNAL CHARACTERISTICS
Output Capacitance Cob – 15 – pF
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current–Gain – Bandwidth Product fT – 210 – MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT

0.7 D = 0.5
0.5
0.3 0.2
THERMAL RESISTANCE

0.2 0.1
θJC(t) = (t) θJC
0.1 0.05 θJC = 100°C/W MAX
P(pk) θJA(t) = r(t) θJA
0.07 0.02
SINGLE PULSE θJA = 375°C/W MAX
0.05 t1 D CURVES APPLY FOR
0.01
0.03 SINGLE PULSE t2 POWER
PULSE TRAIN SHOWN
0.02 DUTY CYCLE, D = t1/t2
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
t, TIME (SECONDS)

Figure 1. Thermal Response

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 BC337, BC337–16, BC337–25, BC337–40, BC338–25

1000 1000
1.0 s 1.0 ms TJ = 135°C
VCE = 1 V
IC, COLLECTOR CURRENT (mA)

100 µs TJ = 25°C

hFE, DC CURRENT GAIN

dc
TC = 25°C

dc
100 TA = 25°C 100

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
10 10
1.0 3.0 10 30 100 0.1 1.0 10 100 1000
VCE, COLLECTOR-EMITTER VOLTAGE IC, COLLECTOR CURRENT (AMP)

Figure 2. Active Region – Safe Operating Area Figure 3. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 1.0
TJ = 25°C TA = 25°C
VBE(sat) @ IC/IB = 10
0.8 0.8
VBE(on) @ VCE = 1 V
V, VOLTAGE (VOLTS)
0.6 0.6

IC = 10 mA 100 mA 300 mA 500 mA

0.4 0.4

0.2 0.2
VCE(sat) @ IC/IB = 10
0 0
0.01 0.1 1 10 100 1 10 100 1000
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. Saturation Region Figure 5. “On” Voltages

100
+1
θV, TEMPERATURE COEFFICIENTS (mV/°C)

θVC for VCE(sat)

0
C, CAPACITANCE (pF)

Cib
10
-1

Cob
-2 θVB for VBE

1
1 10 100 1000 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Temperature Coefficients Figure 7. Capacitances

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 BC337, BC337–16, BC337–25, BC337–40, BC338–25

PACKAGE DIMENSIONS

CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A Y14.5M, 1982.
B 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
1 N P --- 0.100 --- 2.54
STYLE 17: R 0.115 --- 2.93 ---
N PIN 1. COLLECTOR V 0.135 --- 3.43 ---
2. BASE
3. EMITTER

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