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PTB 20111
85 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20111 is a class AB, NPN, common emitter RF power transistor • 25 Volt, 860–900 MHz Characteristics
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 - Output Power = 85 Watts
watts minimum output power, it may be used for both CW and PEP - Collector Efficiency = 50% at 85 Watts
applications. Ion implantation, nitride surface passivation and gold - IMD = -30 dBc Max at 60 W(PEP)
metallization are used to ensure excellent device reliability. 100% lot • Class AB Characteristics
traceability is standard.
• Gold Metallization
• Silicon Nitride Passivated

Typical Output Power vs. Input Power

100

80
Output Power (Watts)

60 2011
LOT1 COD
E

40
VCC = 25 V
20 ICQ = 200 mA
f = 900 MHz
0
0 4 8 12 16
Input Power (Watts) Package 20216

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage VCER 40 Vdc

Collector-Base Voltage VCBO 65 Vdc

Emitter-Base Voltage (collector open) VEBO 4.0 Vdc

Collector Current (continuous) IC 20 Adc

Total Device Dissipation at Tflange = 25°C PD 159 Watts

Above 25°C derate by 0.91 W/°C
Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (Tflange = 70°C) RθJC 1.1 °C/W

9/28/98
This datasheet has been downloaded from http://www.digchip.com at this page
PTB 20111 e
Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts

Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts

Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts

DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain
(VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) Gpe 8.5 9.5 — dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) ηC 50 — — %
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 60 W(PEP), ICQ = 200 mA, Ψ — — 10:1 —
f = 900 MHz—all phase angles at frequency of test)

Impedance Data (data shown for fixed-tuned broadband circuit)

(VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA)

Z Source Z Load

Frequency Z Source Z Load

MHz R jX R jX

860 1.7 -0.8 1.7 -1.6

880 2.0 -1.2 1.8 -1.9

900 1.7 -0.8 1.7 -1.6

2
e PTB 20111
Typical Performance

Gain vs. Frequency Intermodulation Distortion vs. Power Output

(as measured in a broadband circuit) -20
11

-24
10

IMD (dBc)
-28
Gain (dB)

9 VCC = 25 V
VCC = 25 V -32
ICQ = 200 mA
8 ICQ = 200 mA f1 = 899.95 MHz
-36
Pout = 85 W
f2 = 900.00 MHz
7 -40
860 870 880 890 900 20 30 40 50 60 70 80 90
Frequency (MHz) Output Power (Watts-PEP)

Efficiency vs. Output Power Output Power vs. Supply Voltage

60 100
Output Power (Watts)

50 90
Efficiency (%)

40
80
30
70
20
VCC = 25 V
ICQ = 200 mA
ICQ = 200 mA
60 Pin = 10 W
10 f = 900 MHz
f = 900 MHz
0 50
45 50 55 60 65 70 75 80 85 90 18 20 22 24 26 28
Output Power (Watts) Vcc, Supply Voltage

Ericsson Components
RF Power Products 1-877-GOLDMOS Specifications subject to change without notice.
675 Jarvis Drive (1-877-465-3667) LF
Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com © Ericsson Components AB 1995
Telephone: 408-778-9434 www.ericsson.com/rfpower EUS/KR 1301-PTB 20111 Uen Rev. D 09-28-98