BAR 63 ...

Silicon PIN Diode

• PIN diode for high speed 3

switching of RF signal
• Low forward resistance
• Very low capacitance
2
• For frequencies up to 3 GHz
1 VSO05561

BAR 63-04W BAR 63-05W BAR 63-06W

Type Marking Ordering Code Pin Configuration Package

BAR 63-04W G4s Q62702-A1261 1 = A1 2 = C2 3=C1/A2 SOT-323
BAR 63-05W G5s Q62702-A1267 1 = A1 2 = A2 3 = C1/2
BAR 63-06W G6s Q62702-A1268 1 = C1 2 = C2 3 = A1/2

Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR 50 V
Forward current IF 100 mA
Total power dissipation, T S ≤ 105 °C Ptot 250 mW
Junction temperature Tj 150 °C
Operating temperature range Top - 55 ...+150
Storage temperature Tstg - 55 ...+150

Thermal Resistance
Junction - ambient 1) RthJA ≤ 340 K/W
Junction - soldering point RthJS ≤ 180

1) Package mounted on alumina 15mm x 16.7mm x 0.7mm

Semiconductor Group
Semiconductor Group 11 Sep-07-1998
1998-11-01
 BAR 63 ... W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage V(BR) 50 - - V
I (BR) = 5 µA
Reverse current IR - - 50 µA
VR = 20 V
Forward voltage VF - 0.95 1.2 mV
I F = 100 mA
AC characteristics
Diode capacitance CT pF
VR = 0 V, f = 100 MHz - 0.3 -
VR = 5 V, f = 1 MHz - 0.21 0.3
Forward resistance rf Ω
I F = 5 mA, f = 100 MHz - 1.2 2
I F = 10 mA, f = 100 MHz - 1 -
Charge carrier life time τrr - 75 - µs
I F = 10 mA, I R = 6 mA, I R = 3 mA
Series inductance Ls - 1.4 - nH

Semiconductor Group
Semiconductor Group 22 Sep-07-1998
1998-11-01
 BAR 63 ... W

Forward current IF = f (TA*;TS)

* mounted on alumina

120
mA

100
TS
90

80
TA
IF

70

60

50

40

30

20

10

0
0 20 40 60 80 100 120 °C 150
TA,TS

Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load

IFmax / IFDC = f(tp)

10 3 10 3

K/W -
IFmax / IFDC

D=0
RthJS

10 2 10 2 0.005
0.01
0.02
0.05
0.1
0.5
0.2
0.2
0.5
0.1
10 1 0.05 10 1
0.02
0.01
0.005
D=0

10 0 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

Semiconductor Group
Semiconductor Group 33 Sep-07-1998
1998-11-01
 BAR 63 ... W

Diode capacitance CT = f (V R) Forward resistance rf = f (I F)

f = 1MHz f = 100MHz

EHD07139 EHD07138
0.5 10 2

C T pF rf Ω

0.4

10 1
0.3

0.2
10 0

0.1

0 10 -1 -2
0 10 20 V 30 10 10 -1 10 0 10 1 mA 10 2
VR ΙF

Semiconductor Group
Semiconductor Group 44 Sep-07-1998
1998-11-01