FJL4315

FJL4315

Audio Power Amplifier

• High Current Capability : IC=15A
• High Power Dissipation
• Wide S.O.A
• Complement to FJL4215

TO-264
1
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 230 V
VCEO Collector-Emitter Voltage 230 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current(DC) 15 A
IB Base Current 1.5 A
PC Collector Dissipation (TC=25°C) 150 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 50 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 230 V
BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V
ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 uA
IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 uA
hFE1 * DC Current Gain VCE=5V, IC=1A 55 160
hFE2 DC Current Gain VCE=5V, IC=7A 35 60
VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V
VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V
fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
Cob Output Capacitance VCB=10V, f=1MHz 200 pF
* Pulse Test : PW=20us

hFE Classification
Classification R O
hFE1 55 ~ 110 80 ~ 160

©2003 Fairchild Semiconductor Corporation Rev. B, March 2003

 FJL4315
Typical Characteristics

16 1000
IB=200mA
VCE = 5V
IB = 180mA
14
IB = 160mA
IC[A], COLLECTOR CURRENT

IB = 140mA
12

hFE, DC CURRENT GAIN

IB = 120mA
100
10
IB = 100mA

IB = 80mA
8
IB = 60mA
6
IB = 40mA 10

IB = 0
0 1
0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 1 10 100

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

10 10000

IC = 10 IB IC = 10IB
VCE(sat)[mV], SATURATION VOLTAGE
VBE(sat), SATURATION VOLTAGE

1 1000

0.1 100

0.01 10
1E-3 0.01 0.1 1 10 100 0.01 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

12 100

VCE = 5V IC MAX. (Pulsed*)

10 10ms*
IC[A], COLLECTOR CURRENT

10
IC [A], COLLECTOR CURRENT

IC MAX. (DC) 100ms*

8

DC
1
6

4
0.1

*SINGLE NONREPETITIVE
2 o
PULSE TC=25[ C]
0.01
0 1 10 100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VCE [V], COLLECTOR-EMITTER VOLTAGE

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area

©2003 Fairchild Semiconductor Corporation Rev. B, March 2003

 FJL4315
Typical Characteristics

200
PC[W], POWER DISSIPATION

160

120

80

40

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 7. Power Derating

©2003 Fairchild Semiconductor Corporation Rev. B, March 2003

 FJL4315
Package Dimensions

TO-264

20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2.0

20.00 ±0.20
0)

0 ±0

(R1
.20

.00
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

©2003 Fairchild Semiconductor Corporation Rev. B, March 2003

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™

ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic®
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
The Power Franchise™ OPTOLOGIC® SILENT SWITCHER® VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2003 Fairchild Semiconductor Corporation Rev. I2

Product Folder - Fairchild P/N FJL4315 - NPN Epitaxial Silicon Transistor Page 1 of 2

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z Wide S.O.A
z Complement to FJL4215
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Product status/pricing/packaging

Product Product status Pb-free Status Pricing* Package type Leads Packing method Package Marking Convention**

Line 1: $Y (Fairchild logo)

FJL4315OTU Full Production $2.44 TO-264 3 RAIL
Line 2: J4315-O Line 3: &3

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
contact a Fairchild distributor to obtain samples

Indicates product with Pb-free second-level interconnect. For more information click here.

Package marking information for product FJL4315 is available. Click here for more information .

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Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-264-3 Electrical -50°C to 150°C 0V to 18V OrCAD 10.3 May 11, 2007

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