PD - 95010A

IRFP260NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated G
l Ease of Paralleling
l Simple Drive Requirements ID = 50A
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of
applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of TO-220 TO-247AC
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current  200
PD @TC = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy‚ 560 mJ
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 10 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.50
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
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IRFP260NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 28A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 27 ––– ––– S VDS = 50V, ID = 28A „
––– ––– 25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 234 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 38 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 110 VGS = 10V „
td(on) Turn-On Delay Time ––– 17 ––– VDD = 100V
tr Rise Time ––– 60 ––– ID = 28A
ns
td(off) Turn-Off Delay Time ––– 55 ––– RG = 1.8Ω
tf Fall Time ––– 48 ––– VGS = 10V „
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH
from package G

LS Internal Source Inductance ––– 13 –––

and center of die contact S

Ciss Input Capacitance ––– 4057 ––– VGS = 0V

Coss Output Capacitance ––– 603 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 161 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 50
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 200

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „
trr Reverse Recovery Time ––– 268 402 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge ––– 1.9 2.8 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 1.5mH
RG = 25Ω, IAS = 28A.
ƒ ISD ≤ 28A, di/dt ≤ 486A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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 IRFP260NPbF
1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V

4.5V
10 10

4.5V

1 1

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.5
ID = 50A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

3.0

2.5
100
(Normalized)

TJ = 175 ° C
2.0

1.5
TJ = 25 ° C
10
1.0

0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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 IRFP260NPbF
8000 16
VGS = 0V, f = 1 MHZ ID = 28A
Ciss = Cgs + Cgd, Cds SHORTED V DS= 160V

VGS , Gate-to-Source Voltage (V)

7000 V DS= 100V
Crss = Cgd
V DS= 40V
6000 Coss = Cds + Cgd
12
C, Capacitance(pF)

Ciss
5000

4000 8

Coss
3000

2000 4
Crss
1000

0 0
0 50 100 150 200
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

100
ID , Drain Current (A)

TJ = 175° C 100 10us

10 100us

TJ = 25 ° C
10
1ms
1

TC = 25 °C 10ms
TJ = 175 °C
V GS = 0 V Single Pulse
0.1 1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFP260NPbF
RD
50 VDS
50
VGS
D.U.T.
40 RG
+
V
40 DD
ID , Drain Current (A)

-
ID , Drain Current (A)

10V
30
30 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

20 Fig 10a. Switching Time Test Circuit

20

VDS
10 90%
10

0
0 25 50 75 100 125 150 175
25 50 T 75
, Case100 125
Temperature (150
° C) 175 10%
C
TC , Case Temperature ( ° C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

1
Thermal Response(Z thJC )

D = 0.50

0.20
0.1
0.10
0.05
0.02
0.01 SINGLE PULSE
(THERMAL RESPONSE) PDM
0.01
t1
t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP260NPbF
1500

EAS , Single Pulse Avalanche Energy (mJ)

15V
ID
TOP 11A
20A
BOTTOM 28A
L DRIVER
VDS
1000

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01Ω
500
Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( ° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFP260NPbF
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. V DD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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IRFP260NPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

3.65 (.143) -D-

15.90 (.626) 3.55 (.140) 5.30 (.209)
15.30 (.602) 4.70 (.185)
0.25 (.010) M D B M
-B- -A- 2.50 (.089)
1.50 (.059)
5.50 (.217) 4

20.30 (.800)
19.70 (.775) 5.50 (.217) NOTES:
2X
4.50 (.177) 1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
1 2 3 2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
-C- TO-247-AC.
14.80 (.583)
4.30 (.170)
14.20 (.559)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet IGBT
2.40 (.094) 1.40 (.056) 0.80 (.031) 1 -LEAD
GateASSIGNMENTS
1 - Gate
2.00 (.079) 3X 1.00 (.039) 3X 0.40 (.016) 1 - GATE2 - Collector
2 - Drain
2X 2 - DRAIN
0.25 (.010) M C A S 2.60 (.102) 3 - Source 3 - Emitter
3 - SOURCE
5.45 (.215) 2.20 (.087) 4 - Drain
4 - DRAIN4 - Collector
3.40 (.133)
2X 3.00 (.118)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30

WIT H AS S EMBLY PART NUMBER
LOT CODE 5657 INT ERNAT IONAL
AS SEMBLED ON WW 35, 2000 RECTIFIER IRFPE30

IN T HE AS SEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" AS SEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2010
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