OVONIC UNIFIED MEMORY

Sarath Kumar S
S7 ECE
Roll no:68

Government Engineering College

Sreekrishnapuram ,Palakkad

October 29, 2010

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 1 / 21
 CONTENTS

Introduction
Present memory scenario
OUM operation
Characteristics of OUM
Advantages of OUM
Disadvantages OUm
Conclusion

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 2 / 21
 Introduction

25percent of world wide chip markets are memory devices

Day by day the user needs are increasing exponentially
Memory objectives
Adequate storage capacity
Acceptable level of performance
Reasonable cost
Ovonic unified memory (OUM) is an advanced memory technology,
which stores data via the phase change characteristics of its base
material, which provides 3 times faster data storage performance per
word than NOR chips

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 3 / 21
 Present memory scenario

Volatile
SRAM
DRAM
Non Volatile
PROM
EPROM
EEPROM
Flash Memory

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 4 / 21
 Review of memory basics

The memory components of a computer can be subdivided into three main

groups
Internal processor memory
Main memory
Secondary memory

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 5 / 21
 Memory device characteristics

Access time and access rate

Access mode-random and serial
Cycle time and data transfer rate
Size and Cost

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 6 / 21
 Limitations of present memory technologies

DRAMs are difficult to integrate

SRAMs are expensive
FLASH memory can have only a limited number of read and write
cycles
EPROMs have high power requirement and poor flexibility

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 7 / 21
 OVONIC UNIFIED MEMORY

Principle
Reversible structural phase change
Applying read or write pulses
Reset state and Set state

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OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 8 / 21
 Memory structure

Figure: memory structure of OUM

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OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 9 / 21
 Temperature Vs Time graph

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OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 10 / 21
 Technology and performance

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OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 11 / 21
 I-V characteristics

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 12 / 21
 R-I characteristics

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 13 / 21
 Production Process

Melting of the raw material and subsequent milling

Achieves the defined particle size distribution
Powders are processed to discs through Hot Isotactic Pressing

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 14 / 21
 Chalcogenide alloy

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 15 / 21
 Comparison of the two states of OUM

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 16 / 21
 Advantages of OUM

High density
Read-write performance
Low programming energy
Process simplicity
Cost
CMOS embeddability
Scalability

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 17 / 21
 Disadvantages of OUM

High temperatures involved in the manufacturing process.

Higher voltages are required to write data.

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 18 / 21
 CONCLUSION

Non volatile OUM with fast read and write speeds,low voltage/low energy
operation,ease of integration and competitive cost structure is suitable for
ultra high density , stand alone and embedded memory applications. Its
unique combination of features collectively provide a high-density,
low-power.Is still a futuristic memory

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 19 / 21
 References

OUM â a 180 nm non volatile memory cell element technology for

stand alone and embedded applications â Stefan Lai and Tyler Lowrey
Current status of Phase change memory â Stefan Lai
Computer Organization â V Carl Hamacher, Zvonko G Vranesic,
Safwat G Zaky
Computer Architecture and Organization - John P Hayes.
Solid State Devices- Ben G Streetman,Sanjay Banerjee
http://en.wikipedia.org/wiki/EnergyConversionDevices
http://www.ieee.xplore.org/ovonicunifiedmemory

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 20 / 21
 Thank you

...........THANK YOU...........

Sarath Kumar S S7 ECE Roll no:68 ( Government Engineering

OVONIC UNIFIED
College Sreekrishnapuram
MEMORY ,Palakkad) October 29, 2010 21 / 21