AP9962GM

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low On-resistance BVDSS 40V

D2
▼ Single Drive Requirement D1
D2 RDS(ON) 25mΩ
D1
▼ Surface Mount Package ID 7A
G2
S2
G1
SO-8 S1

Description

Advanced Power MOSFETs from APEC provide the D1 D2

designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness. G1 G2

S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage +20 V
ID@TA=25℃ Continuous Drain Current3, VGS @ 10V 7 A
3
ID@TA=70℃ Continuous Drain Current , VGS @ 10V 5.5 A
1
IDM Pulsed Drain Current 20 A
PD@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 ℃/W

Data and specifications subject to change without notice 1

200901202
AP9962GM

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 25 mΩ
VGS=4.5V, ID=5A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=7A - 11 - S
IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=32V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=7A - 25.8 - nC
Qgs Gate-Source Charge VDS=32V - 4.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 9.1 - nC
2
td(on) Turn-on Delay Time VDS=20V - 10.6 - ns
tr Rise Time ID=1A - 6.8 - ns
td(off) Turn-off Delay Time RG=5.7Ω,VGS=10V - 26.3 - ns
tf Fall Time RD=20Ω - 12 - ns
Ciss Input Capacitance VGS=0V - 1165 - pF
Coss Output Capacitance VDS=25V - 205 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 142 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.7A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time Is=7A, VGS=0V, - 21.2 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9962GM

25 25

o 10V T A =150 o C 10V

T A =25 C
20
8.0V 20
8.0V
ID , Drain Current (A)

ID , Drain Current (A)

5.0V 5.0V
4.0V 4.0V
15 15

10 10

V G =3.0V
5 5

V G =3.0V

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

35
1.8

ID=7A I D =7A
o V G =10V
T A =25 C 1.6

30
Normalized RDS(ON)
RDS(ON) (mΩ)

1.4

25
1.2

1.0

20

0.8

15 0.6
3 4 5 6 7 8 9 10 11 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100

2.8

10
2.6

2.4
VGS (th)

o o
IS(A)

T j =150 C T j =25 C 2.2

1
2

1.8

1.6
0.1

1.4

1.2

0.01 1
0 0.4 0.8 1.2 1.6 -50 0 50 100 150

V SD ,Source-to-Drain Voltage (V) o

Junction Temperature ( C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9962GM
f=1.0MHz
14 10000

12
I D =7A
VGS , Gate to Source Voltage (V)

10 V DS =20V
1000
V DS =25V C iss

C (pF)
8
V DS =32V

6 C oss
100
C rss
4

0 10
0 5 10 15 20 25 30 35 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

DUTY=0.5
Normalized Thermal Response (R thja)

0.2
10

0.1
0.1

1ms
ID (A)

0.05

PDM
1 10ms 0.02 t
T
0.01
100ms Duty factor = t/T
0.01 Peak Tj = PDM x Rthja + Ta

0.1
1s Single Pulse
Rthja = 135℃/W

o
T A =25 C
Single Pulse DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

RD
VDS

TO THE

VDS TO THE D OSCILLOSCOPE

D OSCILLOSCOPE
0.8x RATED VDS
0.5x RATED VDS G
RG G
S VGS
+
+ S
10V VGS 1~ 3 mA
-
- IG ID

Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit

4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E
c 0.19 0.22 0.25
D 4.80 4.90 5.00
1
2 3 4 E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e 1.27 TYP
e G 0.254 TYP
B L 0.38 － 0.90
α 0.00 4.00 8.00

A1

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : SO-8

Part Number
Package Code
meet Rohs requirement
9962GM
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence