Académique Documents
Professionnel Documents
Culture Documents
Front-End Design
Jerzy Dąbrowski
Division of Electronic Devices
Department of Electrical Engineering (ISY)
Linköping University
e-mail: jdab@isy.liu.se
1
J.Dąbrowski, Intro to RF Front-End Design
2
J.Dąbrowski, Intro to RF Front-End Design
1
Organization of the course
• Lectures 8 x 2h
• Laboratory work 3 x 4h (guided by Henrik
Fredriksson and Rashad Ramzan)
• Project work (Simulink/Cadence Spectre)
• Individual reports
• Course books:
– B. Razavi, RF Microelectronics, Prentice-Hall, 1998
– T.H. Lee, The Design of CMOS RF Integrated Circuits,
Cambridge Univ. Press, 1998/2004
3
J.Dąbrowski, Intro to RF Front-End Design
4
J.Dąbrowski, Intro to RF Front-End Design
2
Wireless Communication
Bit Rate
kb/sec Systems Today
100,000 UWB
In-door 4G directions
10,000 Also many other wireless
WLAN
Bluetooth UMTS applications and gadgets
CDMA2000
1000
Cellular
DECT
100 PHS EDGE, GSM
CT1/CT2 IS-54/IS-95 GPS
PDC
10 Cordless Satellite
1 Zigbee Paging
5
J.Dąbrowski, Intro to RF Front-End Design
WCDMA W-CDMA/ 1920-1980 (Tx) 5000 0.1 ppm QPSK 3840 0.125, 0.25,
(UMTS) TD-CDMA 2110-2170 (Rx) kHz (max) 0.5, 2W
6
J.Dąbrowski, Intro to RF Front-End Design
3
RF communication channel
RF1 RF1
RF2
BB1 BB
Tx1 RF … Rx1 …
RF2
RF1
BB2 RF2
Tx2 BB
RF3 Rx2 …
RF3
7
J.Dąbrowski, Intro to RF Front-End Design
Frequency
Abbr ITU band Example uses
Band name Wavelength
< 3 Hz
> 100,000 km
3–30 Hz
Extremely low frequency ELF 1
100,000 km – 10,000 km
30–300 Hz
Super low frequency SLF 2
10,000 km – 1000 km
300–3000 Hz
Ultra low frequency ULF 3
1000 km – 100 km
3–30 kHz
Very low frequency VLF 4
100 km – 10 km
Military communication
3–30 MHz
High frequency HF 7
100 m – 10 m
Shortwave broadcasts and amateur radio
30–300 MHz
Very high frequency VHF 8
10 m – 1 m
FM and television broadcasts
300–3000 MHz
Ultra high frequency UHF 9
1 m – 100 mm
television broadcasts, wireless LAN
3–30 GHz
Super high frequency SHF 10
100 mm – 10 mm
microwave devices, mobile phones
30–300 GHz
Extremely high frequency EHF 11
10 mm – 1 mm
Above 300 GHz
< 1 mm
8
J.Dąbrowski, Intro to RF Front-End Design
4
Propagation Effects
Digital Tx & Rx
RF part (analog)
Analog BB part (digital)
BB RF
ADC DSP DAC
Front-End
input
Coding,
Interleaving, Upconversion,
Shaping, Modulation gain, filtering
RF part (analog)
BB part (digital) Analog
RF BB
ADC DSP DAC
Front-End
output
Demodulation,
Downconversion, Deinterleaving, Decoding
gain, filtering
10
J.Dąbrowski, Intro to RF Front-End Design
5
BB data rate
y(t) Quantization
x(t) Sampling N bits
t t
Nyquist limit
1/fS
fS > 2Bx
11
J.Dąbrowski, Intro to RF Front-End Design
Shannon limits
Information capacity: C = 2B log2M [bits/sec]
12
J.Dąbrowski, Intro to RF Front-End Design
6
Shannon limit due to noise
13
J.Dąbrowski, Intro to RF Front-End Design
R<C
DECT
Bit rate R < C for any system
e.g. for GSM:
R/B = 270kbps/200kHz = 1.35
@ SNR = 9dB for BER < 10-3
for DECT:
R/B = 1152kbps/1728kHz = 0.67
@ SNR = 10.3dB for BER < 10-3
Tradeoff between signal BW and power
14
J.Dąbrowski, Intro to RF Front-End Design
7
Digital modulation schemes
15
J.Dąbrowski, Intro to RF Front-End Design
3 different parameters
Sinusoidal Carrier x(t) : available for modulation
x(t ) = A0 ⋅ cos(ω 0 t + φ )
by the base-band signal
(i.e. the modulating signal)
16
J.Dąbrowski, Intro to RF Front-End Design
8
Frequency shift keying (FSK)
xBB(t)
sFSK(t)
Acosω1t
1
0
Acosω0t ω1 ω0 ω1
Modulator
Tb
sFSK(t) ∫0 +
Acosω1t Threshold
xBB(t) 1
detector 0
Tb -
∫0 Tb = n0/f0 = n1/f1
Acosω0t “Orthogonal” frequencies
Coherent detector based on correlation
17
J.Dąbrowski, Intro to RF Front-End Design
FSK (cont’d)
f0
Envelope
sFSK(t) detector
- Threshold
xBB(t)
detector
f1 Envelope
+
1
detector
0
18
J.Dąbrowski, Intro to RF Front-End Design
9
Phase shift keying (PSK)
xBB(t) sPSK(t)
1
-1 Acosω0t
ϕ ϕ+π ϕ+π
Modulator
sPSK(t) xBB(t) 1
Tb Threshold
∫0 detector 0
Acosω0t Tb = n0/f0
19
J.Dąbrowski, Intro to RF Front-End Design
Q I Acosωct
1 -
±1
0 Required BW is half that of BPSK
Modulator Asinωct
α2
3π/4 +Ac π/4
-Ac +Ac
Model (constellation):
α1
sQPSK (t) = α1cosωct - α2sinωct
-3π/4 -Ac -π/4
α1,2= ± Ac
10
QPSK (cont’d)
Tb Threshold
sQPSK(t) ∫0 detector
xBB(t)
Acosωct I Q
Tb Threshold 1
∫0 detector 0
Asinωct
α2 QPSK detector
Advantage of QPSK:
As bits are grouped and
α1 transmitted in pairs, the
bandwidth needed is half
compared to binary PSK.
Phase transitions in QPSK
21
J.Dąbrowski, Intro to RF Front-End Design
Offset QPSK
Drawback: cannot be
α1 adopted to differential
encoding to support
ϕ ϕ + π/2 ϕ - π/2 non-coherent reception
22
J.Dąbrowski, Intro to RF Front-End Design
11
M-ary QAM
16-ary QAM
constellation
(4 bits are encoded)
23
J.Dąbrowski, Intro to RF Front-End Design
(+1, -1)
Rectangular pulses are
xBB(t) sMSK(t) replaced by half-sinusoids
Q I sinω1t sinωct of ω1= π/2Tb that modulates
the carrier of ωc
Tb
(+1, -1)
Tb Advantage: no abrupt phase
cosω1t cosωct changes at the output, signal
MSK based on Offset QPSK bandwidth saved and less
prone to amplitude variations
when limited in band!
12
OFDM techniques
Multiple sub-carriers to Power
transmit signal bits in Tone modulated by
parallel for very high rectangular pulse
throughput
Spectra of different sub
channels can partly f
overlap, pulse shaping fc1 fc2 fc3
not necessary Densely spaced !
Modulator
OFDM is usually fc1
combined with QAM
or PSK
Serial to parallel
Combiner
BB data signal
fcN
25
J.Dąbrowski, Intro to RF Front-End Design
α2 PSK
These models
1 AT2
Pe , PSK = erfc cb assume AWGN
2 N0
A1 A2 α1
Distance between
A1A2 for FSK is
α2 smaller than for
A 2T FSK PSK – so more
1
Pe , FSK = erfc c b
A2 immune to noise
2 2N0
A1 α1
13
Multiple-Access techniques
27
J.Dąbrowski, Intro to RF Front-End Design
∆f ∆f ∆f
User_1
User_2 User_3
N time slots
∆t ∆t ∆t ∆t ∆t ∆t
User_1 User_1
User_2 User_2
User_3 User_3
28
J.Dąbrowski, Intro to RF Front-End Design
14
CDMA systems
Direct sequence CDMA
Coding sequences for
BB data different users are
orthogonal (e.g.
Data encoded
Walsh, Barker),
signals overlap in
frequency band and
in time.
1 bit period
Code sequence (chip)
User 1 Signal 1
Signal 1
Decoding
Encoding for User 1
f f Signal 2
User 2 Signal 2
( spectrum
( spectrum f
spreading ) despreading
f f Noise alike
Immune to fading by correlation)
29
J.Dąbrowski, Intro to RF Front-End Design
Frequency-hopping CDMA
15
Up-link and down-link by FDD/TDD
/Duplex – ability to transmit and receive simultaneously/
∆f ∆f ∆f ∆f ∆f ∆f
FD
Duplex User_1 User_1
User_2 User_2
User_3 User_3
User_1 User_1
User_2 User_2
User_3 User_3
31
J.Dąbrowski, Intro to RF Front-End Design
RF Transceiver
at Glance
RF Baseband
Section Section
32
J.Dąbrowski, Intro to RF Front-End Design
16
Digital transmitter at glance
Modulation Upconversion
ADC & DSP DAC
and Filtering
Baseband Power
signal Amplifier
Carrier
33
J.Dąbrowski, Intro to RF Front-End Design
Down
RF Demodulator
Filter
Conversion ADC DAC
& filtering & DSP
Low Noise Baseband
Amplifier signal
Carrier
34
J.Dąbrowski, Intro to RF Front-End Design
17
CMOS RF design issues
• Disciplines in RF design
• Key goals for ICs for RF transceiver
implementation
• Why CMOS technology ?
35
J.Dąbrowski, Intro to RF Front-End Design
Disciplines required
in RF system design
RF Design
36
J.Dąbrowski, Intro to RF Front-End Design
18
RF Circuit Design Octagon
Multi-objective approach
Several trade-offs
in RF design
RF Design
37
J.Dąbrowski, Intro to RF Front-End Design
Ultimate objective
• Single-chip transceiver
• Minimum external components
• Inductors and capacitors integrated on chip
Crystal Battery or
power supply
38
J.Dąbrowski, Intro to RF Front-End Design
19
Bluetooth CMOS TRx from Alcatel (2001)
40
J.Dąbrowski, Intro to RF Front-End Design
20
Why CMOS Technology
• Submicron MOSFETs, 180,130, 90 nm today, very fast,
fmax>100GHz, perform well up to 10 GHz or more
• Good linearity for higher signal swing
• With multiple metal layers good capacitors and inductors
(QL up to 20) can be integrated on a chip
• Upper metal layers far from Si substrate – reduce substrate
losses
• Lower substrate doping helps to isolate RF blocks and reduce
losses
• Large digital bocks (DSP & control) can be integrated on one
chip
• CMOS cheaper from other technologies (BiCMOS, GaAs, .. )
• Many successful RF CMOS designs performed recently
41
J.Dąbrowski, Intro to RF Front-End Design
Summary
• Wireless communication systems (mobile, cordless,
WLAN, GPS, … ) are in continuous progress
• Wireless communication systems are very complex
multidisciplinary field
• Design of RF IC’s is a multi-objective task
• CMOS technology proves to be increasingly
competitive for RF IC’s design (even higher
frequencies)
• RF CMOS is an attractive research field
42
J.Dąbrowski, Intro to RF Front-End Design
21