FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers

June 2006

FFB20UP20DN tm

10A, 200V Ultrafast Dual Rectifiers

Features Description
„ High Reverse Voltage : VRRM = 200V The FFB20UP20DN is an ultrafast rectifier. It has a low
forward voltage drop and is a silicon nitride passivated ion-
„ Avalanche Energy Rated implanted epitaxial planar construction.

„ Planar Construction This device is intended for use as a freewheeling/clamping

rectifier in a variety of switching power supplies and other
Applications power switching applications. Its low stored charge and
„ Output Rectifiers hyperfast recovery minimize ringing and electrical noise in
many power switching circuits, thus reducing power loss in
„ Switching Mode Power Supply the switching transistors.

„ Free-wheeling diode for motor application

„ Power switching circuits

Pin Assignments

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 200 V
VRWM Working Peak Reverse Voltage 200 V
VR DC Blocking Voltage 200 V
If(avg) Average Rectified Forward Current @ TC = 155oC 10 A
IFSM Non-repetitive Peak Surge Current 100 A
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature -55 to +175 °C

Thermal Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Max Units
RθJC1 Maximum Thermal Resistance, Junction to Case 3.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
F20UP20DN F20UP20DN TO-263 13” 24mm 800

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FFB20UP20DN Rev. A
 FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Min. Typ. Max Units
2 ο
VF IF = 10A TC = 25 C - - 1.15 V
IF = 10A TC = 150οC - - 1.0 V
IR 2 VR = 200V TC = 25οC - - 10 µA
VR = 200V TC = 150οC - - 250 µA
trr IF =1A, di/dt = 200A/µs, VCC = 130V TC = 25 οC - 15 25 ns
IF =10A, di/dt = 200A/µs, VCC = 130V TC = 25οC - 27 40 ns
ta IF =10A, di/dt = 200A/µs, VCC = 130V TC = 25οC - 21 - ns
tb TC = 25οC - 6 - ns
Qrr TC = 25οC - 50 - nC
WAVL Avalanche Energy (L = 20mH) 10 - - mJ

Notes
1: Rth_jc value is specified for each die
2: Pulse: Test Pulse width = 300S, Duty Cycle = 2%

FFB20UP20DN Rev. A 2 www.fairchildsemi.com

 FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers
Typical Characteristics TC = 25°C unless otherwise noted

20 100

10
Forward Current, IF [A]

10

Reverse Current, IR [µA]

o o
TC = 175 C TC = 175 C

o
TC = 100 C 1

1 o
TC = 25 C 0.1 TC = 100 C
o

0.01
o
TC = 25 C
0.1 1E-3
0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200
Forward Voltage, VF [V] Reverse Voltage , VR [V]

Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current

400 50
f = 1MHz
Reverse Recovery Time, trr [ns] IF = 10A
45
o
TC = 175 C
Capacitance, cj [pF]

40
100

35

30 o
TC = 150 C

25 o
TC = 25 C

10 20
0.1 1 10 100 50 100 150 200 250 300
Reverse Voltage , VR [V] di/dt [A/µs]

Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time

Average Recitified Forward Current, IF(AV) [A]

8 12
Reverse Recovery Current, Irr [A]

IF = 10A
o
TC = 175 C
10
6
DC
o
8
TC = 150 C

4 6
o
TC = 25 C
4
2
2

0 0
50 100 150 200 250 300 120 130 140 150 160 170
di/dt [µ/s] Case Temperature, TC (oC)

Figure 5. Typical Reverse Recovery Current Figure 6. Case Temperature, Tc [oC]

FFB20UP20DN Rev. A 3 www.fairchildsemi.com

 FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers
Typical Characteristics TC = 25°C unless otherwise noted

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage

Figure 9. Maximum Continuous Drain Current vs Figure 10. Forward Bias Safe Operating Area
Ambient Temperature

Figure 11. Single Pulse Maximum Power Dissipation

Figure 12. Transient Thermal Response Curve

FFB20UP20DN Rev. A 4 www.fairchildsemi.com