I. Multiple Choice 10.

It is recommended to use UJT oscillator for gate-

1. The diac is triggering of the thyristors mainly because
a. Transistor a. It is fairly simple
b. Unidirectional device b. It provides sharp firing pulses
c. Three-layer device c. It is less expensive
d. Bidirecitonal device d. None of the above

2. The triac is equivalent to 11. In a UJT, intrinsic standoff ratio is typically

a. A four-layer diode a. 0.2
b. Two diacs in parallel b. 0.4
c. A thyristor with a gate lead c. 0.7
d. Two back-to-back SCRs in parallel d. 0.99

3. The unijunction transistor acts as a 12. A PUT relaxation oscillator has values VBB = 15V,
a. Four-layer diode R=22kΩ, R2 = 6kΩ, IP = 100µA, VV = 1V, IV = 7 mA,
b. Diac C = 1µF, RK = 100kΩ, and R3 = 12kΩ. The value of Vp
c. Triac will be
d. Latch a. 0.7 𝑅3 12𝑘Ω
η= = ̅̅̅̅
= 0. 66
b. 10 V 𝑅3 + 𝑅2 12𝑘Ω + 6𝑘Ω
4. The _____ can be externally programmed to turn on at a c. 10.7 V 𝑉𝑝 = 𝜂𝑉𝐵𝐵 + 0.7 → 0. ̅66
̅̅̅(15𝑉) + 0.7 = 10.7
desired anode-to-gate voltage level. d. 15 V
a. UJT
b. PUT 13. In question no. 12, the value Rmax will be
c. Diac a. 2 kΩ
𝑉𝐵𝐵 − 𝑉𝑝 15 𝑉 − 10.7 𝑉
d. Triac b. 2.2 kΩ R 𝑚𝑎𝑥 = → = 43𝑘Ω
c. 14 kΩ 𝐼𝑝 100 ∗ 10−6 𝐴
5. You need a very efficient thyristor to control the speed of d. 43 kΩ
an AC fan motor. A good device to use would be
a. a 4-layer diode 14. A triac and SCR are compared
b. a PUT a. Both are unidirectional
c. a Triac b. Triac requires more current for turn-off than SCR at
d. a BJT a particular voltage
c. Triac has less time for turn-off than SCR
6. You have a need to use a device to trigger an SCR. A d. Both are available with comparable voltage and
good one to use might be current ratings
a. an SCS 15. The triac can be used only in
b. a UJT a. Inverter
c. a 4-layer diode b. Rectifier
d. a diac c. Multiquadrant chopper
d. Cycloconverter
7. The triac can be turned on or off by a pulse at the gate
a. True 16. In a UJT, maximum value of charging resistance is
b. Maybe associated with
c. False a. Peak point
d. Cannot be determined b. Valley point
c. Any point between peak and valley point
8. Which of the following is not a characteristic of the UJT? d. After the valley point
a. intrinsic standoff ratio
b. negative resistance
c. peak-point voltage
d. bilateral conduction

9. The PUT is
a. much like the UJT
b. not a thyristor
c. triggered on and off by the gate-to-anode voltage
d. not a four-layer diode
II. Problem-Solving
1. Determine a value of R1 in the Figure that will 3. At what anode voltage (VA) will the PUT in the
ensure proper turn-off of the UJT. The figure begin to conduct? (3 points)
characteristics of the UJT exhibits the following
values: 𝜂 = 0.5, VV = 1 V, IV = 10 mA,
IP = 20 µA, and VP = 14 V. (3 points)

𝑉𝐴 = 𝜂𝑉𝐵 + 0.7

10𝑘
𝑉𝐴 = (20) + 0.7
12𝑘 + 10𝑘

𝑉𝐵𝐵 − 𝑉𝑉 𝑉𝐵𝐵 − 𝑉𝑃 𝑉𝐴 = 9.79 𝑉

< 𝑅1 <
𝐼𝑉 𝐼𝑃

30𝑉 − 1𝑉 30𝑉 − 14𝑉

−3 < 𝑅1 <
10 ∗ 10 𝐴 20 ∗ 10−6 𝐴

2.9𝑘Ω < 𝑅1 < 800𝑘Ω

2. In a certain UJT, RB1 = 2.5kΩ and RB2 = 4kΩ.

Determine the peak-point voltage for the UJT if
VBB = 15V. (3 points)
𝑉𝑃𝑃 = 𝜂𝑉𝐵𝐵 + 0.7

2.5𝑘
𝑉𝑃𝑃 = (15) + 0.7
2.5𝑘 + 4𝑘

𝑉𝑃𝑃 = 6.469 𝑉