3N187

MOS FIELD-EFFECT TRANSISTOR

DESCRIPTION:
The ASI 3N187 is an N-Channel
Dual-Gate Depletion Type Transistor
With Monolithic Gate Protection PACKAGE STYLE TO-72
Diodes, used in RF,IF Amplifier and
Mixer Applications up to 300 MHz.

MAXIMUM RATINGS
I 50 mA
V 20 V
O
PDISS 330 mW @ TA = 25 C
O O
TJ -65 C to +175 C 1 = Drain 2 = Gate #2
O O 3 = Gate #1 4 = Source, Case, and Substrate
TSTG -65 C to +175 C

CHARACTERISTICS O
TA = 25 C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
VG1S(OFF) VDS = 15 V VG2S = 4.0 V ID = 50 µA -0.5 -4.0 V
VG2S(OFF) VDS = 15 V VG1S = 0 V ID = 50 µA -0.5 -4.0 V
VG1S = 1.0 V VG2S = VDS = 0 V 50
IG1SSF O µA
TA = 100 C 5.0
VG1S = -6.0 V VG2S = VDS = 0 V 50
IG1SSR O µA
TA = 100 C 5.0
VG2S = 6.0 V VG1S = VDS = 0 V 50
IG2SSF O µA
TA = 100 C 5.0
VG2S = -6.0 V VG1S = VDS = 0 V 50
IG2SSR O µA
TA = 100 C 5.0
V(BR)G1 IG1 = ± 100 µA ±6.5 V
V(BR)G2 IG2 = ± 100 µA ±6.5 V
IDS VDS = 15 V VG1S = 0 V VG2S = 4.0 V 5.0 10 30 mA
VDS = 15 V VG2S = 4.0 V ID = 10 mA
gfs 7000 18000 µmho
f = 1.0 KHz
VDS = 15 V VG2S = 4.0 V ID = 10 mA
GPS 16 22 dB
f = 200 MHz
VDS = 15 V VG1S = 0 V VG2S = 4.0 V 12000
|yfs| µmho
f = 200 MHz
Crss VDS = 15 V VG2S = 4.0 V ID = 10 mA 0.005 0.03 pF
Ciss f = 1.0 MHz 4.0 8.5
VDS = 15 V VG2S = 4.0 V ID = 10 mA 4.5
NF dB
f = 200 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.