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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 17: Hall Effect, Diffusion
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) Measurement of mobility
2) Hall Effect for determining carrier concentration
Hall Effect for determining carrier concentration
3) Physics of diffusion
4) Conclusions

REF: ADF, Chapter 5, pp. 190‐202

Alam  ECE‐606 S09 2
Problem of mobility measurement …
J

V
E = ρJ
J = q ( μ n n + μ p p )E
1
ρ=
q( μn n + μ p p)
1
= … for nn-type
type
qμn N D
1
= … for p-type
p type
qμ p N A
?
Alam  ECE‐606 S09 3
Outline

1) Measurement of mobility
2) Hall Effect for determining carrier concentration
Hall Effect for determining carrier concentration
3) Physics of diffusion
4) Conclusions

Alam  ECE‐606 S09 4
 Set up for Hall Measurement
z
y x z
B
VH
- d
+
w

I
L

UIC system: 4‐300K, 0‐1.5 T

Alam  ECE‐606 S09 5
 Mobility Measurement

z Magnetic Field I
y
x VH

Magneto‐electric effect
Several Nobel prizes
Several Nobel prizes ….

Alam  ECE‐606 S09 6
Drude Model

Weak B field …
m*υ m*υ
−qE − qυ × B − =0 − qE − ≈0
τ τ
m*υ = − qτ E − qτ υ × B
− qτ E
υ'=
⎛ qτ E ⎞ m*
≈ − qτ E − qτ ⎜ − ⎟× B
⎝ m* ⎠
q 2τ 2 Perturbation works iff
Perturbation works iff ….
= −qτ E + * E × B
m q 2τ 2 B qτ B
= * ≡ τωc << 1
qτ E q 2τ 2 m qτ
*
m
υ = − * + *2 E × B
m m
Alam  ECE‐606 S09 7
 Drude Model & Hall Effect …

J n = −qn υ
q nτ
2
q nτ qτ 2 z B Field
= * E − * * E×B y
m m m I
VH
= σ 0E − σ 0 μ E × B

⎡Jx ⎤ ⎡ σ0 −σ 0 μ Bz ⎤ ⎡ Ex ⎤
⎢J ⎥ = ⎢ ⎥ ⎢E ⎥
⎣ y ⎦ ⎣σ 0 μ Bz σ0 ⎦ ⎣ y ⎦

Alam  ECE‐606 S09 8
 Hall Resistance

z B Field
⎡Jx ⎤ ⎡ σ0 −σ 0 μ Bz ⎤ ⎡ Ex ⎤
⎢J ⎥ = ⎢
y I
⎣ y ⎦ ⎣σ 0 μ Bz σ 0 ⎥⎦ ⎣⎢ E y ⎦⎥ VH

⎡Jx ⎤ ⎡ σ0 0 ⎤ ⎡ Ex ⎤
⎢J ⎥ ≈ ⎢ ⎥ ⎢E ⎥
⎣ y ⎦ ⎣σ 0 μ Bz σ 0 ⎦ ⎣ y ⎦

⎡Jx ⎤ ⎡ σ0 0 ⎤ ⎡ Ex ⎤
⎢ 0 ⎥ = ⎢σ μ B σ ⎥ ⎢ E ⎥
⎣ ⎦ ⎣ 0 z 0⎦⎣ y⎦

between 0.5 and 
E y Bz 1 2 in practice
2 in practice
RH = =−
Jx qn
Alam  ECE‐606 S09 9
Temperature‐dependent Concentration

Freeze Intrinsic 
out Extrinsic 
n
1
ND

ni
ND

Temperature

Alam  ECE‐606 S09 10
Outline

1) Measurement of mobility
2) Hall Effect for determining carrier concentration
Hall Effect for determining carrier concentration
3) Physics of diffusion
4) Conclusions

Alam  ECE‐606 S09 11
Now the Diffusion term…

∂n 1
= ∇ • J N − rN + g N
∂t q I
J N = qnμ N E + qDN ∇n
∂p 1
= − ∇ • J P − rP + g P V
∂t q
J P = qp μ P E − qDP ∇p

∇ • D = q ( p − n + N D+ − N A− )

Alam  ECE‐606 S09 12
Diffusion Flux …
x

⎡ ⎛ dp ⎞ ⎛ dp ⎞⎤
⎢ q⎜ p (0) + p (0) − l ⎟ p (0) + p ( 0) + l ⎟⎥
dx q⎜ dx l
J = ⎢− ⎜ ⎟×l + ⎜ × l ⎟⎥
⎢ 2⎜ 2 ⎟ 2⎜ 2 ⎟⎥ υth
⎢⎣ ⎝ ⎠ ⎝ ⎠ ⎥⎦
lυ dp
p dpp
=q ≡ qD
2 dx dx
Alam  ECE‐606 S09 13
Einstein Relationship …

lυ (υτ ) ×υ 1 * 2
D m0υ k BT
= 2 = 2 = 2 =
μ qτ qτ q q
* *
m0 m 0

… because scattering dominates both phenomena

Alam  ECE‐606 S09 14
Flat Fermi‐level defines Equilibrium …
n2
n
n1
dn
J n = 0 = qnμn E + qDn
d
dx EC 2
1 dn μE
⇒ =− n EC
EC1
EF
n dx Dn
L
μn E μnV
− ∫ Dn EV
n2 = n1e 0
= n1e Dn

n2 N C e − ( EC 2 − EF ) / kT − ( EC 2 − EC 1 ) / kT
= = e = e qV / kT

n1 N C e− ( EC 1 − EF ) / kT

qV μnV q μ Similar to relationship between 
Similar to relationship between
= ⇒ = n
kT Dn kT Dn cn and en discussed in Chapter 5
Alam  ECE‐606 S09 15
 Conclusion

1) Measurement of mobility and carrier concentration is 
particularly important for analysis of semiconductor 
devices. 
2) Drift, diffusion, and recombination
Drift diffusion and recombination‐generation
generation constitute 
constitute
the elemental processes in semiconductor device physics.
3) We will put the pieces together in the next class. 
W ill t th i t th i th t l

Alam  ECE‐606 S09 16