Académique Documents
Professionnel Documents
Culture Documents
www.nanohub.org
ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 22: Non‐ideal effects
Muhammad Ashraful Alam
alam@purdue.edu
Alam ECE‐606 S09 1
Outline
1) Non‐ideal effects: Junction recombination
2) Non‐ideal effects: Impact ionization
Non ideal effects: Impact ionization
3) Conclusion
Ref. Semiconductor Devices Fundamentals, Chapter 6
Alam ECE‐606 S09 2
Topic Map
Equilibrium
q DC Small Large
g Circuits
signal Signal
Diode
Schottky
BJT/HBT
MOSFET
Alam ECE‐606 S09 3
MAA1
Various Regions of I‐V Characteristics
ln(I)
() 3 1 Diffusion
1. Diff i limited
li it d
2
2. Ambipolar transport
1
3. High injection
6,7
VA 4. R
R-G
G in depletion
5. Breakdown
4 6. Trap-assisted R-G
5 7. Esaki Tunneling
Alam ECE‐606 S09 4
Slide 4
qVbi
EC‐EF
EF‐EV
x
np
n,p
q(Vbi‐V)
EC‐Fn
V
Fp‐EV
x
Alam ECE‐606 S09 5
(4,6) Junction Recombination
W ∂n
I R = − qA∫ dx
0 ∂t
∂n [n( x) p( x) − ni 2 ]
=−
∂t τ p [n( x) + n1 ] + τ n [ p( x) + p1 ]
Assume τn =τ p E i = ET n1 = p1 = ni
∂n ni (e qV A / kT − 1)
2
=− Note: Do you remember this HW ?
∂t τ [ n( x ) + p ( x ) + 2ni ]
Alam ECE‐606 S09 6
(np) Product within the Junction
Mass action in non‐equilibrium
2 ( FN − FP ) / kT
n( x) p ( x) = ni e
= ni 2e qVA / kT
Alam ECE‐606 S09 7
Electron/Hole Concentrations at Junction
Ei ( x) = EiL − qqV ( x)
ni 2 e qVA / kT
( FN − Ei ( x )) / kT
p ( x) =
n( x ) = ni e ni e[ FN − EiL + qV ( x )]/ kT
position
Alam ECE‐606 S09 8
Junction Recombination
FN − EiL VA
U FN = UA =
kT kT / q
∂n ni (eU A − 1)
= − U FN +U
∂t τ [e + e −U FN −U +U A ]
⎛n ⎞ ⎛UA ⎞ W dx
I R = − qA ⎜ i ⎟ × sinh ⎜ ⎟ ∫
×
⎝τ ⎠ ⎝ 2 ⎠ 0 cosh[U FN + U − U A / 2]
∂n ni eU A / 2 (eU A / 2 − e −U A / 2 )
⇒ =−
∂t τ eU A / 2 [eU FN +U −U A / 2 + e −U FN −U +U A / 2 ]
∂n n sinh(U A / 2)
⇒ =− i
∂t τ cosh[U FN + U − U A / 2]
Alam ECE‐606 S09 9
Junction Recombination in Forward Bias
∂n n sinh(U A / 2))
⇒ =− i
∂t τ cosh[U FN + U − U A / 2]
ni UA W dx
⇒ I R ≈ − qA( ) sinh( ) ∫
τ 2 0 e(U FN +U −U A / 2) Emax
ni UA W dx ln(I) 3
⇒ I R ≈ − qA( ) × sinh( ) ∫
τ 2 0 e − ( Emax x ) /( kT / 2 q ) 2
1
⎡ kT ⎤ ⎡ ni qVA / 2 kT ⎤ 6,7
⇒ I Dep = −qA ⎢ ⎥⎢ e ⎥ VA
⎣ 2qEmax ⎦ ⎣ τ ⎦
4
Effective width Excess Carrier at 5 10
mid‐junction
Junction Leakage in Practice
Insulating Layer
d
p
rj rj
n
Alam ECE‐606 S09 11
Junction Recombination in Reverse Bias
W=xn+xp
∂n ni (Recombination in
=− d l i
depletion region)
i )
∂t 2τ
W ⎛ ni ⎞
I R ≈ − qA∫ ⎜ 2τ ⎟dx
0
⎝ ⎠
ln(I) 3
2
niW 1
= − qA ∝ Vbi − VA 6,7
VA
2τ
4
5 12
Alam ECE‐606 S09
Outline
1) Non‐ideal effects: Junction recombination
2) Non‐ideal effects: Impact ionization
3)) Conclusion
Alam ECE‐606 S09 13
MAA2
Avalanche Breakdown
ln(I)
() 3 1 Diffusion
1. Diff i limited
li it d
2
2. Ambipolar transport
1
3. High injection
6,7
VA 4. R
R-G
G in depletion
5. Breakdown
4 6. Trap-assisted R-G
5 7. Esaki Tunneling
Alam ECE‐606 S09 14
Slide 14
Alam ECE‐606 S09 15
Impact‐ionization and Flux Conservation
I n ( x + dx) − I n ( x)
= α n I n ( x) + α p I p ( x)
dx
dI ( x)
⇒ n = α n I n ( x) + α p I p ( x)
dx
dI n ( x)
= α p [ IT − I n ( x) ] + α n I n ( x)
x dx
W 0
− ( α n − α p ) I n ( x) = α p IT
dI n ( x)
dx
Alam ECE‐606 S09 16
Impact‐ionization
x
In(0)~0 W − ∫ ( αn −α p )dx ' I n (0)
I n (W ) ∫α p e 0
dx +
IT
= 0
x
IT W − ∫ ( αn −α p )dx '
1 + ∫ (α p − αn ) e 0
dx
0
I p (W ) + I n (W ) = IT ⇒ I n (W ) ≈ IT
I n (0) 1
≡
IT Mp
x
W 0
x
⎛ ⎞ W − ∫ ( α p −α n ) dx '
1
⎜⎜1 − ⎟⎟ ≈ 1 = ∫ α p e 0 dx
⎝ Mp ⎠ 0
Ip(W)~0
Alam ECE‐606 S09 17
Impact‐ionization x
W − ∫ ( α p −αn ) dx '
∫ α pe
0
0
dx ≈ 1
α p = α n ⇒ α pW = 1
α p = A0 e − B E
1/ 2
qN D xn ⎡ 2q N D N A ⎤
E (0 ) =
−
=⎢ (Vbi − VA )⎥
k sε 0 ⎣ k sε 0 N D + N A ⎦
El t i Fi ld
Electric Field
VA<0
VA=0
VA>0
Position
Alam ECE‐606 S09 18
Impact‐ionization: In Practice
Good ….
Insulating Layer
d
p Bad….
rj rj
n
Alam ECE‐606 S09 19
Junction Engineering Insulating
Layer
d
p
rj rj
i-region
n
E E
Dead Space
What happens if W is less
than the mean‐free
than the mean free path ?
path ?
Alam ECE‐606 S09 21
Zener Breakdown vs. Impact Ionization
How do you differentiate between Zener
tunneling and impact‐ionization?
Alam ECE‐606 S09 22
Conclusion
1) Junction recombination is often used as a diagnostic
tool for process maturity. Defects in junction arises
from misplaced donor impurities, not necessary from
p p , y
deep‐trap impurities.
2) Impact ionization plays an important role in wide
Impact ionization plays an important role in wide
variety of devices (e.g. avalanche photo‐diodes).
3) In the next class, we will discuss AC response of p‐n
junction diodes.
Alam ECE‐606 S09 23