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# NCN

www.nanohub.org

## ECE606: Solid State Devices

Lecture 34: MOSCAP Frequency Response
alam@purdue.edu

Outline

1. Background

4. Conclusion

Topic Map

signal Signal
Diode

Schottky

BJT/HBT

MOSCAP

## Alam ECE-606 S09 3

Small Signal Equivalent Circuit
G0
p
CD
CJ

CJ/Co
1
Low
frequency For insulated devices,
consider only majority carrier
junction capacitance CJ
High
frequency
VG
Alam ECE-606 S09 4
Junction Capacitance

dQG d (−QS )
VG + υ S sin ωt CG ≡ =
dVG dVG
QS
+ V=
G ψS −
~ CO
-
dVG dψ S 1
p-Si = +
d ( −QS ) d ( −QS ) CO

1 1 1
= +
CG CS CO

## Alam ECE-606 S09 5

Junction Capacitance

1 1 1
VG = +
CG CS CO
CO
d ( −QS )
CS ≡
CS dψ S

QS (ψ S )

understand!
Alam ECE-606 S09 6
Definition of m for later use

m= (1 + CS CO ) VG

## ‘body effect coefficient’ CO

ψS
m= (1 + κ S xO κ 0WT ) CS

in practice:
CO VG
1.1 ≤ m ≤ 1.4 ψS = VG ≡
CO + CS m

Outline

1. Background

4. Conclusion

## Alam ECE-606 S09 8

Junction Capacitance in accumulation
κ oxε 0 CoCs , acc κ sε 0
C j , acc ≈ =
≡ C0 C j , acc Cs , acc ≡
x0 Co + Cs , acc Wacc

+Q

C/Co
Wacc Low frequency
1
+Q

-Q

## Alam ECE-606 S09 9

Junction Capacitance in depletion

=
C j , dep =
C0Cs C0 +Q
C0 + Cs 1 + C0 Cs
VG
C0 Co -Q
= =
κ oε 0 κ sε 0 V
1+ 1+ G
x0 W Vδ

qN AW  qN AW 2  C/Co
VG x0 +   Low frequency
κ oε 0  2κ ε
s 0  1

κo W VG
= 1+ −1
κ s x0 Vδ

VG
Alam ECE-606 S09 10
Junction capacitance in inversion

κ sε 0
C j , inv ≈ ≡ C0
x0
VG
CoCinv κ sε 0
= C j ,inv Cinv ≡
Co + Cinv Winv
VG’ >VT’
C/Co
Low frequency
1

+Q Exposed
Acceptors

-Q
Electrons
VG
Alam ECE-606 S09 11
Equivalent Oxide Thickness

Low frequency
Qi = −CG (VG − VT ) 1

CoCinv C/Cox
=
CG C= < Co
Cinv + Co
j , inv

κ oε o κ sε o
Co = Cinv ≡ VG
x0 Winv
κ oxε O  κ oxε O 
CG = EOTelec =
xO +  Winv > xO
 κ sε O 
EOTelec

## ‘Equivalent oxide thickness - electrical ’

Alam ECE-606 S09 12
High frequency curve at inversion

κ sε 0
C j , inv ≈ ≡ C0
x0 C/Co
1

ΔQ
High frequency
WT

VTH VG
-ΔQ

## What about high frequency part of the curve?

Alam ECE-606 S09 13
Response Time

VG VG VG

VG’ >VT’

## Dielectric Relaxation SRH Recombination-Generation

σ np − ni2 − ni
τ= = R →
κ s ε0 τn ( p + p1 ) + τ p (n + n1 ) τn + τ p

## Alam ECE-606 S09

Ref. Lecture no. 15 14
High frequency response in MOS-C
Low Frequency High Frequency

ΔQ ΔQ

WT WT

-ΔQ -ΔQ

C/Co
1
Low frequency

High frequency

## Alam ECE-606 S09 VG 15

Ideal vs. Real C-V Characteristics
Flat band voltage …

C/Co C/Co

Threshold voltage …

Outline

1. Background

4. Conclusion

Topic Map

signal Signal
Diode

Schottky

BJT/HBT

MOS

## Alam ECE-606 S09 18

Large Signal Deep Depletion
ρ(x)
ΔQ
ΔQ Wdm Wdm

NA
NA
C0Cs C0 -ΔQ x0 -ΔQ
=
C j , dep =
C0 + Cs 1 + κ ox W
κ s x0
Co
= Low frequency
V
1+ G
Vδ C/Co
(even beyond threshold)
High frequency
VG
19
Relaxation from Deep Depletion
1 Low frequency

## C/Cox Depending on the measurement

frequency, it will either merge
with low-freq. or high-freq. curve.
High frequency
Deep depletion

ΔQ ΔQ ΔQ

## Wdm Wdm Wdm

NA
NA
-ΔQ -ΔQ -ΔQ
x0 x0
20
Ideal vs. Real C-V Characteristics
Flat band voltage …

C/Co C/Co

VG VG
Threshold voltage …

## Alam ECE-606 S09 21

Low or High frequency?

n+-Si n+-Si

ni
G=

p-Si
p-Si
typically observe hi- typically observe low-frequency CV
frequency CV No deep-depletion as well

Summary

## 1) Since current flow through the oxide is small, we are

primarily interested in the junction capacitance of the
MOS-capacitor.
2) High frequency of MOS-C is very different than low-
frequency C-V. In MOSFET, we only see low frequency
response.
3) Deep depletion is an important consideration for MOS-
capacitor that does not happen in MOSFETs.

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