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ECE606:
Solid
State
Devices
Lecture
37:
Nonideal
Effects
in
MOSFET
Muhammad
Ashraful
Alam
alam@purdue.edu
Alam
ECE‐606
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Topic
Map
SchoDky
BJT/HBT
MOS
Alam
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Outline
1. Flat band voltage
2. Threshold voltage shiN due to trapped charges
3. Physics of interface traps
4. Conclusion
REF. Chapter 18, SDF
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(1)
Idealized
MOS
Capacitor
Vacuum
level
ci
y
Substrate
(p)
cs
Fm
EC
Recall
that
EF
EV
Alam
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Poten\al,
Field,
Charges
ci
V
cs
x
Fm
E
x
Vbi=0
r
x
Alam
ECE‐606
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Real
MOS
Capacitor with
M
<
S
Note
the
difference
EVAC
EC
EC
EF
EF
EV
EV
E C
E C
EF
EV EF
EV
flat
band
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How
to
Calculate
Built‐in
or
Flat‐band
Voltage
Vacuum
level
qVbi
cs
Fm EC
Therefore,
EF
EV
Alam
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Measure
of
Flat‐band
shiN
from
C‐V
Characteris\cs
C/Cox
Ideal
Vth
VG
Actual
Vth
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Outline
1. Flat band voltage
2. VT‐shiH due to trapped charges
3. Physics of interface traps
4. Conclusion
Alam
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(2)
Idealized
MOS
Capacitor
Vacuum level
ci
y
Substrate
(p)
cs
Fm
EC
Qox=0
EF
Recall that
EV
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11
Distributed
Trapped
charge
in
the
Oxide
EC
EF
EV
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An
Intui\ve
View
Reduced
gate
charge
Bulk
charge
Ideal
charge‐free
oxide
‐E
0
‐E
Interface
charge
0
‐E
0
Alam
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Gate
Voltage
and
Oxide
Charge
‐E
0
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Gate
Voltage
and
Oxide
Charge
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Interpreta\on
for
Bulk
Charge
C/Cox
Ideal
VT
VG
New
VT
Alam
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Interpreta\on
for
Interface
Charge
C/Cox
Ideal
VT
VG
New
VT
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Time‐dependent
shiN
of
Trapped
Charge
C/Cox
E
Ideal
VT
VG
ρion
x
x
0.1xo
0.9xo
0
xo
0
xo
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Outline
1. Flat band voltage
2. VT‐shiN due to trapped charges
3. Physics of interface traps
4. Conclusion
Alam
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Google
image
SiO
and
SiH
Bonds
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Interface
States
Forming gas anneal
H H H
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C‐V
Stretch
Out
Forming gas anneal
H H H
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Nature
of
Donor
and
Acceptor
Traps
C/Cox
VG
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Acceptor
like
Interface
States
0 0
-1
‐1
C/Cox
VG
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Acceptor
and
Donor
Traps
Combined
Donor-related Acceptor-related
stretchout stretchout
C/Cox
VG
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Conclusion
1) Non‐ideal
threshold
characteris\cs
are
important
considera\on
of
MOSFET
design.
2) The
non‐ideali\es
arise
from
differences
in
gate
and
substrate
work
func\on,
trapped
charges,
interface
states.
3) Although
nonindeal
effects
oNen
arise
from
transistor
degrada\on,
there
are
many
cases
where
these
effects
can
be
used
to
enhance
desirable
characteris\cs.
Alam ECE‐606 S09 29