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2SC4927

Silicon NPN Triple Diffused

Application
TV/character display horizontal deflection output

Features
• High breakdown voltage
VCES = 1500 V
• Built-in damper diode type
• Isolated package
TO-3PFM

Outline

TO-3PFM

1
1. Base ID
2. Collector
3. Emitter

1 3
2
3
2SC4927
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage VCES 1500 V
Emitter to base voltage VEBO 6 V
Collector current IC 8 A
Collector peak current IC(peak) 9 A
Collector surge current IC(surge) 18 A
1
Collector power dissipation PC* 50 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID 8 A
Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)


Item Symbol Min Typ Max Unit Test conditions
Emitter to base breakdown V(BR)EBO 6 — — V IE = 500 mA, IC = 0
voltage
Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0
DC current transfer ratio hFE — — 25 — VCE = 5 V, IC = 1 A
Collector to emitter saturation VCE(sat) — — 5 V IC = 6 A, IB = 1.2 A
voltage
Base to emitter saturation VBE(sat) — — 1.5 V IC = 6 A, IB = 1.2 A
voltage
C to E diode forward voltage VECF — — 2.0 V IF = 8 A
Fall time tf — — 0.5 µs ICP = 6 A, IB1 = 1.2 A,
IB2 ≅ –2.4 A, fH = 31.5 kHz

2
2SC4927
Maximum Collector Power Dissipation Curve

80

Pc (W)
60

Collector Power Dissipation


40

20

0 50 100 150 200


Case Temperature Tc (°C)

Area of Safe Operation

20
(100 V, 18 A) f = 15.75 kHz
Ta = 25 °C
I C (A)

16
For picture tube arcing

12
Collector Current

4 (800 V, 4 A)

0.5 mA

0 400 800 1200 1600 2000


Collector to Emitter Voltage V CE (V)

Typical Output Characteristics

10
2.0 A 1.4 A
1.8 A 1.6 A
I C (A)

1.2 A
1.0 A
0.8 A
Collector Current

5 0.6 A
0.4 A

0.2 A

Tc = 25°C IB = 0
0 5 10
Collector to Emitter Voltage V CE (V)

3
2SC4927
DC Current Transfer Ratio
vs. Collector Current

100
V CE = 5 V

h FE
50
75°C

DC Current Transfer Ratio


20 25°C

10

5 Tc = –25°C

1
0.1 0.2 0.5 1 2 5 10
Collector Current I C (A)

Collector to Emitter Saturation Voltage


vs. Collector Current
Collector to Emitter Saturation Voltage

10
IC / IB = 5
5

2
V CE(sat) (V)

0.5
Tc = –25°C
0.2
25°C
0.1
75°C
0.05
0.1 0.2 0.5 1 2 5 10
Collector Current I C (A)

4
2SC4927

Base to Emitter Saturation Voltage


vs. Collector Current

10

Base to Emitter Saturation Voltage


IC / I B = 5
5

V BE(sat) (V)
2
Tc = –25°C
1

0.5
25°C
75°C

0.2

0.1 0.2 0.5 1 2 5 10


Collector Current I C (A)

Collector to Emitter Saturation Voltage


vs. Base Current

10
Collector to Emitter Saturation Voltage

8
V CE(sat) (V)

IC = 4 A 6A 8A
6

0 Tc = 25°C
0.1 0.2 0.5 1 2 5
Base Current I B (A)

5
2SC4927

When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.


2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109

For further information write to:


Hitachi America, Ltd. Hitachi Europe GmbH Hitachi Europe Ltd. Hitachi Asia Pte. Ltd.
Semiconductor & IC Div. Electronic Components Group Electronic Components Div. 16 Collyer Quay #20-00
2000 Sierra Point Parkway Continental Europe Northern Europe Headquarters Hitachi Tower
Brisbane, CA. 94005-1835 Dornacher Straße 3 Whitebrook Park Singapore 0104
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Tel: 0628-585000 Unit 706, North Tower,
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Hong Kong
Tel: 27359218
Fax: 27306071

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