Unijunction Transistor (UJT)

B2

P-type mat B2

E
E
η type Si bar

B1

B1
Fig: 2
Fig: 1

An UJT consists of a lightly doped η-type Si bar. A heavily doped p-region is diffused
in to the Si bar to form a p-η junction as shown in fig 1. It has three terminals – the
Base 2 (B2), the Base 1(B1) & the Emitter (E). Its symbolic representation is shown
in fig 2. When operated in the region on its input characteristics (shown in Fig.5)
specified by the coordinators (VP, IP), (VV, IV)., the device posses negative resistance
property. Its behavior can be well understood with reference to the circuit
arrangement shown in fig 3 & its equivalent circuit setup in fig 4.

R2

RE B2
E
VB2B1 VBB

I E
B1
VEE VE

Fig: 3
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 R2

B2
VBB

rb2 VB2B1
RE
E
C

I E rb1
VEE
VE

B1

Fig: 4

VE
Saturation Region
Negative Rest Region
VP1
ƒ
‚

VP2 For VBB = VBB2

For VBB = VBB1 (<VBB2)

Plot 1 „
VV

IEO IP IV
IE
Fig: 5

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In fig 3, VBB & VEE are the base and emitter DC bias sources. RBB (between B2 & B1)
is the inter base resistance of the UJT. The resistor R2, if used, is very small as
compared to RBB in practice, so that the inter base voltage VB2B1 is almost equal to
VBB itself.

In fig 4 rb1 & rb2 are the equivalent resistance seen between the junction & Base 1
and the junction & Base 2 respectively. The inter base resistance RBB= rb1 + rb2. For
VB2B1 = VBB applied, the voltage at C will be VC = [rb1 / RBB] x VBB = η x VBB, in which η
is called the intrinsic standoff ratio of the UJT. Typical value of η will be in the range
of 0.5 & 0.9.

The characteristic behavior of UJT. (Ref. Fig 5)

Let for UJT η = 0.63. Let us consider for the case of VBB = VEE = 0. Corresponding
VB2B1 = 0, VC = 0, VE = 0 & IE = 0.

If now VEE is gradually increased, the device behaves like a pη diode. IE increases as
shown on plot at 1.

Let us consider for the case of VBB = 10V, VEE = 0. Corresponding VE = 0V, VB2B1 =
10V, VC = n x VBB = 6.3V. This means the diode D1 remains reverse biased. IE will
be equal to the reverse leakage current IEO, as shown at point  on the input plot.

Let VEE now be increased gradually. Till VE rises to VC = 6.3V the diode continues
remain reverse biased, & the reverse bias reduces with increasing VE. Accordingly the
leakage current reduces till IE reaches 0, for VE = VC, as shown on plot at point ‚.

For further increase in VE, IE goes positive. This injects charge carries in to lower
region (rb1) of the Si bar. This increases the conductivity of the rb1 region & hence
the resistance rb1 reduces. This reduces VC. The junction gets more forward biased.
This in turn increases carrier injection in to rb1 region that will further reduce rb1; and
so on. This cumulative regenerative action initiated as VE rises to VP & IE rises to IP
shown at point ƒ on the plot, will result in increase in the emitter current IE being
associated with decrease in the emitter voltage VE; thus exhibiting a negative
resistance property. This will prevail till VE falls to VV, the valley voltage specification

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of the UJT. If RE is so chosen that IE is not allowed rise above IV, the UJT turns off.
This is shown as Point „ on the plot.

However if RE is small enough to provide current greater than IV, we notice that IE
will increase with increasing VE and device behaves like a pn diode; & is not the
region of our interest.

The restriction on selection of resister RE is clear.

For RE to provide an emitter current IE at least equal to IP as VE rises to VP1, the
maximum value of resistance that can be used is given by REmax = (VEE - VP) / IP, in
which the peak voltage VP = VC + VD = 7V.
However for RE not to provide IE more than IV as VE falls to VV, the minimum value of
resistor that can be used is given by RE min = (VEE - VV) / IV.

If the experiment is now repeated with VBB = VB2B1 = 8V, the characteristic behavior
remains same, however VP2 = (η x VBB + VD) = (0.63 x 8V + 0.7) = 5.74V. This is
also shown on the VI Plot.

Note:
1. RBB – is the inter base resistance of the UJT. It ranges from 4K to 12K
typical value is being 7K
2. Typical Inter base voltage rating VB2B1 will be given by manufacturer.
However the maximum applicable inter base voltage VB2B1max can also be
…………..
determined using the relation VB2B1 max = R BB xPD 
Note:
RBB: If range of RBB or value of RBB min is given, RBB min is to be taken for
calculation in the above relation 
PD: It is the Power dissipation capability of the UJT at room temperature of
the device.
If the device is operated at higher temperature, PD is to be derated
using the relation: PD2 = PD1 – [D (T2-T1)].
Where • PD1 is the power dissipation rating at temperature T1
• PD2 is the power dissipation rating at temperature T2 (>T1)
• D is the power derating factor expressed in mw/o C, & will be
given by the Manufacturer.

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 3. η is the Intrinsic standoff ratio of the UJT. Typical value for η ranges from 0.5
to 0.9
4. (VP, IP) are the peak voltage and peak current specification of the UJT.
The peak voltage VP is the voltage at which the UJT turns on for a given VBB,
(provided an emitter current IE at least equal to IP is supplied through R).
The Peak voltage VP, is given by the relation VP = ηVBB + VD

5 (VV, IV ) are valley voltage & valley current of the UJT and will be given by
manufacturer. Valley voltage VV is also referred to as Emitter saturation
voltage VEB1 sat.
As the emitter voltage falls to valley voltage VV, if the emitter current supplied
is not greater than the valley current IV, the UJT turns off.

Illustrative Examples:

Ex:1 For a UJT RBB = 4k, PD = 360 mw at 25oC. Power derating factor for UJT –
2.4mw /o C. Estimate VBB max at 100oC.

Sol: PD1 at a temp of T1= 25oC is given as 360mw, and the derating factor
D = 2.4mw /oC .

∴PD2 at temp T2 =100 o C is given by PD2 = PD1 – [D (T2-T1)]

= 360 – [2.4 x (100 – 75)]
= 180 mw

∴ VBB max = 4 X 103 X 180 X 10−3 = 720 = 26.8V

Ex:2 Given η min = 0.6, η max = 0.8, determine VP for VBB = 10V

Sol: VP min = VD + η min x VBB = 0.7 + 0.6 x 10 = 6.7V

VP max = VD - η max x VBB = 0.7 + 0.8 x 10 = 8.7 V

Ex:3 Given η=0.63, estimate VP for VBB = 10V and VBB = 15V

Sol: VP1 = 0.7 + 0.63 x 10 = 7V

VP2 = 0.7 + 0.63 x 15 = 10.15V

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 UJT Relaxation Oscillator

VBB

R2
R
Rmin B2

B1
vC C

R1 vO

Fig: 1

VBB
VP

vC

VV

0
Time
TC Td

vO

0
Time
Fig: 2

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• In the circuit shown VBB is the DC base bias supply. R2, if used, is to provide a
greater thermal stability (frequency stability). Typical value of R2 is 100 – 200Ω.
• R1 is a small value of resistor, across which are developed pulses that may be
used to trigger the SCR (Silicon Control Rectifier). Typical value of R1 will be in
the range of few ohms to 10’s of ohms.
• R and C are the timing elements. By adjustment of R, the desired frequency of
the output pulses can be obtained.

Working:
Let the DC bias supply voltage VBB be applied at t=0

• For t ≤ 0, let the capacitor C be uncharged. Hence for t ≤ 0, vC = vO = 0

• For t> 0, C starts charging towards VBB with a time constant RC. The UJT will
not turn on till VC = VE rises to VP, the peak voltage specification of UJT circuit.
• As VC rises to VP, if R is so chosen that it provides a current at least equal to
IP, the UJT turns on
VBB − VP
This implies Rmax =
IP
Once UJT turns on, C discharges into UJT through R rapidly with a time
constant R1C, that is much smaller than RC (ie R1C <<<RC).
• As VO falls to VV, if R is chosen that it will not provide a current greater than
IV, the UJT turns off.
VBB − VV
This implies Rmin =
IV
• Once UJT turns off, vC again rises towards VBB; and the process repeats.
Observations:

• Except during the very first cycle, the instantaneous capacitor voltage vC swings
between VV and VP at a frequency ƒ = 1/T
• Each time as the capacitor voltage reaches VP and discharges into R1, the circuit
produces a pulse of magnitude almost equal to (VP – VD).
• We observe that one cycle duration T is T = TC + Td. In practice Td<<<TC, so
that TC ≈ T.
• We can show that the charging duration TC is given by the relation
VBB − VV
TC = RC in
VBB − VP

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• Substituting for VP in the above relation for TC, we can write:
VBB − VV
TC = RC ln
VBB − ηVBB + VD
• In practice VV and VD will be very much smaller than VBB. Hence neglecting VV &
VD, the above relation reduces to TC= RC ln [1 /1-η].
• Further, in specific, if η = 0.63, the above relation reduces to TC =RC.
• In all these cases the frequency of oscillation ƒ will be f = 1 / T ≈ 1 / TC

Illustrative examples:

Ex: 1 The circuit and device parameters of a UJT relaxation oscillator setup are:
VBB = 10V. For UJT η = 0.63, VV = 1V, IV= 4ma, IP=5 micro amp. Design the
oscillator for a frequency of 100Hz. What will be its output swing?

Sol:
Let us evaluate the timing elements R and C required.
We know, the time period T of the UJT oscillator output is given by the expression
VBB − VV
T = R C ln where VP = ηVBB + VD = 0.63 x 10 + 0.7 = 7V, and T=1/ƒ
VBB − VP
∴ 1/100 = R C ln (10-1) / (10-7) = R C ln 3
∴ R C = 0.01 / Ln 3 = 9.1 x 10-3 ……..
Let us now find the range of timing resistor that can be used, as given by:
VBB − VV 10 − 1
Rmin = = = 2.25 x 103 Ω.
IV 4 x10 − 3
Let us choose Rmin = 2.7 K.

VBB − VP 10 − 7
Rmax = = −6
= 3 /5 x 106 = 0.6 x 106 Ω
IP 5 x10
Let us choose C = 0.1 µF
Then, from relation  above, required R = 9.1 x 10-3 / 0.1 x 10-6 = 91 K
Hence the following arrangement for the timing resistor R is suggested, as a practical
approach.

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 POT of 100K

R
Rmin = 2.7K

The output swing will be: (VP-VV) = 7-1 = 6V

Ex:2 In the Ex 1 above, estimate the range of frequency over which oscillator
will work.
Sol:
Maximum frequency ƒmax = 1 / Tmin
VBB − VV
Where Tmin = Rmin C ln
VBB − VP
taking C = 0.1 µF and Rmin = 2.7 K,
10 − 1
Tmin = (2.7 x 103 x 0.1 x 10-6) ln
10 − 7
∴ ƒmax = 1 / Tmin = 3.37 KHz

Similarly minimum frequency ƒmin = 1 / Tmax

VBB − VV
where Tmax = Rmax C ln
VBB − VP
taking C = 0.1 µF, Rmax = 91 K,
10 − 1
∴ Tmax = (91 x 103 x 0.1 x 10-6 ) ln
10 − 7
∴ ƒmin = 1 / Tmax = 100 Hz

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Examples on UJT and its application

1. A 2N4870 UJT has the following parameters:

PD = 300mw at 25O C, D = 3mw / O
C, η=0.56 to 0.75, RBB = 4k to 9.1K, VV =
2.5V, IP=1µA to 5µA, IV = 2ma to 5ma. Determine the maximum VB2B1 that may
be applied at T= 75 O C.

Solution:
Given PD = 300mw at 25O C, D = 3mw / OC, η=0.56 to 0.75, RBB = 4k to 9.1K, VV
= 2.5V, IP=1µA to 5µA, IV = 2ma to 5ma. To determine the maximum VB2B1 that
may be applied at T= 75 O C.

We know for UJT VB2B1max = RBB min x PD 2

Where RBBmin = 4k
PD2 = PD1 – [D (T2-T1)]
= 300 x 10-3 – [3(75-25)] x 10-3
= (300 – 150) mw = 150 mw

∴VB2B1 = 4 x10−3 x 150 x 10 −3 = 600 = 24.49V

2. In the above problem, calculate VPmax & VPmin for VBB = 30V

Solution:
VPmax = ηmax x VBB + VD = 0.75 x 30 + 0.7 = 23.2V
VPmin = ηmin x VBB + VD = 0.56 x 30 + 0.7 = 17.5V

3. For the above UJT used in SCR control circuit, if VZ = 30V. Estimate maximum
and minimum values of timing resistor.

Solution:
Rmax : Even when drop across R is at its minimum (VRmin), R should provide an
emitter current of IPmax so that UJT definitely turns on.
VR min VBB − VP max (30 − 23.2)V
=> Rmax = = = = 1.36mΩ
I P max I P max 5 x 10−6

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Rmin : Even when drop across R is at maximum as VC falls to VVmin, , R should not
provide current more than IVmin.

VBB − VV min (30 − 2.5)

=> Rmax = = = 13.75 K
I V max 2 x 10−3

4. Determine the maximum power dissipation for a 2N2647 UJT at an ambient

temperature of 70 OC. Also calculate the maximum level of VB2B1 that may be
used at 70 OC. Refer to Appendix 1.18 for UJT specifications.

Solution:

Relevant specification in appendix 1.18 given are noted below:

PD – Maximum power dissipation is 300mw
D – Power derating factor is 3mw / OC
RBB - Inter base resistance is 7K

Given the maximum power dissipation = 300mw. Say this is at a temperature

T1 = 25 OC
Then, PD2 at T2 = 70 OC is given by
PD2 = PD1 – [D (T2-T1)] = 300mw –[3mw / OC (70-25) OC] = 165mw.

∴ VB2B1max = RBB x PD 2 = 7 x 10 −3 x 165 x 10 −3 = 1155 = 33.98V

5. Calculate the minimum and maximum VEB1 triggering levels for a 2N2647 UJT
when VB2B1 = 20V

Solution:

Relevant specification in appendix 1.18 given are noted below:

η = 0.68 to 0.82

The notations VEB1 in the problem given is VP discussed in theory

VPmax = (ηmax x VBB) + VD = (0.82 x 20 +0.7) = 17.1V
VPmin = (ηmin x VBB) + VD = (0.68 x 20 + 0.7) = 14.3V

6. A relaxation oscillator uses a 2N2647 UJT with VBB = 25V. Calculate typical
oscillation frequency if C1 = 0.5µF and RE = 3.3KΩ.

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 Solution:
Note: The notations RE in the problem given is R discussed in theory.
VBB − VV
We know, for UJT oscillator, the time period T = RC ln
VBB − VP
Where VV = 3.5V, given in the appendix.
η min + η max 0.68 + 0.82
Let us calculate the typical value of VP for η typ = = =
2 2
0.75
∴Typical value of VP = η typ VBB + VD = (0.75 x 25) + 0.7 = 19.45V
(25 − 3.5)V
∴ T = 3.3. x 103 x 0.5 x 10-6 x ln = 2.2 x 10-3 sec
(25 − 19.45)V
∴ ƒ = 1/T = 450 Hz

7. Calculate the maximum and minimum charging resistance values that can be
used in the circuit of the above problem.
Solution:
VBB − VP
Rmax =
IP
From η typ = 0.75, IP = 1µA, VP = 19.45V
25 − 19.45
∴ Rmax = = 5.55mΩ
1 X 10 −6
Given in the appendix, IV= 10 ma and VV = 3.5 V
VBB − VV 25 − 3.5
∴ Rmin = = = 2.15K
IV 10 X 10 −3

Note: Specifications given in appendix 1.18 for 2N 2647 UJT.

Parameter Particular Specification
PD Maximum Power Dissipation 300 mw
D Derate linearity / Power derating factor 3 mw / OC
RBB Interbase Resistance 7K
η Intrinsic stand off ratio 0.68 to 0.82
IP Peak current 1 µa
IV Valley current 10 ma

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