FTP11N08

N-Channel MOSFET Pb Lead Free Package and Finish

Applications:
• Automotive VDSS RDS(ON) (Max.) ID
• DC Motor Control
• Class D Amplifier 75V 11 mΩ 100A

Features:
• RoHS Compliant D
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
G G
D
Ordering Information S
TO-220
PART NUMBER PACKAGE BRAND Not to Scale S
FTP11N08 TO-220 FTP11N08

Absolute Maximum Ratings TC=25 oC unless otherwise specified

Symbol Parameter FTP06N65 Units
VDSS Drain-to-Source Voltage (NOTE *1) 75 V
ID Continuous Drain Current 100*
o
ID@ 100 C Continuous Drain Current Figure 3 A
IDM Pulsed Drain Current, VGS@ 10V (NOTE *2) Figure 6
Power Dissipation 230 W
PD o o
Derating Factor above 25 C 1.54 W/ C
VGS Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Engergy
EAS 600 mJ
L=10 mH, ID=11 Amps
IAS Pulsed Avalanche Rating Figure 8
dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3.0 V/ns
Maximum Temperature for Soldering
o
TL Leads at 0.063in (1.6mm) from Case for 10 seconds 300 C
TPKG Package Body for 10 seconds 260
Operating Junction and Storage
TJ and TSTG -55 to 175
Temperature Range

*Drain Current limited by Maximum Package Current Rating, 75 Amps

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.

Thermal Resistance
Symbol Parameter Min. Typ. Max. Units Test Conditions
Water cooled heatsink, PD adjusted for
RθJC Junction-to-Case -- -- 0.65 o
o
C/W a peak junction temperature of +175 C.
RθJA Junction-to-Ambient -- -- 62 1 cubic foot chamber, free air.

©2007 InPower Semiconductor Co., Ltd. FTP11N08 REV. B June 2007

 o
OFF Characteristics TJ=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 75 -- -- V VGS=0V, ID=250µA
o
BreakdownVoltage Temperature Reference to 25 C,
∆BVDSS /∆ TJ -- -- o
V/ C
Coefficient, Figure 11. 0.08 ID=250µA

-- -- 25 VDS=75V, VGS=0V
IDSS Drain-to-Source Leakage Current µA
VDS=60V, VGS=0V
-- -- 250 o
TJ=150 C
Gate-to-Source Forward Leakage -- -- 100 VGS=+20V
IGSS nA
Gate-to-Source Reverse Leakage -- -- -100 VGS= -20V

ON Characteristics TJ=25 oC unless otherwise specified

Symbol Parameter Min. Typ. Max. Units Test Conditions
Static Drain-to-Source On-Resistance VGS=10V, ID=45A
RDS(ON) -- 9.5 11.0 mΩ
Figure 9 and 10. (NOTE *4)
VGS(TH) Gate Threshold Voltage, Figure 12. 2.0 -- 4.0 V VDS=VGS, ID=250µA
VDS=15V, ID=75A
gfs Forward Transconductance -- 83 -- S
(NOTE *4)

Dynamic Characteristics Essentially independent of operating temperature

Symbol Parameter Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance -- 4000 -- VGS=0V
Coss Output Capacitance -- 1050 -- VDS=25V
pF
f =1.0MHz
Crss Reverse Transfer Capacitance -- 136 --
Figure 14
Qg Total Gate Charge -- 87 -- VDD=30V
ID=75A
Qgs Gate-to-Source Charge -- 32 -- nC
VGS=10 V
Qgd Gate-to-Drain (“Miller”) Charge -- 21 -- Figure 15

Resistive Switching Characteristics Essentially independent of operating temperature

Symbol Parameter Min. Typ. Max. Units Test Conditions
td(ON) Turn-on Delay Time -- 17 -- VDD=30V
trise Rise Time -- 110 -- ID=75A
ns
td(OFF) Turn-Off Delay Time -- 75 -- VGS=10V
tfall Fall Time -- 67 -- RG=4.7Ω

FTP11N08 REV. B June 2007

©2007 InPower Semiconductor Co., Ltd. Page 2 of 11
 o
Source-Drain Diode Characteristics Tc=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) -- -- 120 A Integral pn-diode
ISM Maximum Pulsed Current (Body Diode) -- -- 480 A in MOSFET
VSD Diode Forward Voltage -- -- 1.5 V IS=75A, VGS=0V
trr Reverse Recovery Time -- 130 195 ns VGS=0V
Qrr Reverse Recovery Charge -- 340 510 nC IF=75A, di/dt=100 A/µs

Notes:

*1. TJ = +25 oC to +175oC.

*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 75A di/dt < 100 A/µs, VDD < BVDSS, TJ=+175oC.
*4. Pulse width < 380µs; duty cycle < 2%.

FTP11N08 REV. B June 2007

©2007 InPower Semiconductor Co., Ltd. Page 3 of 11
 Duty Factor Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
1.000
50%

20%
ZθJC, Thermal Impedance

10%
0.100
5%
(Normalized)

2%
PDM

0.010
1% t1
single pulse t2
NOTES:
DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZθJC x RθJC+TC
0.001

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

tp, Rectangular Pulse Duration (s)

Figure 2. Maximum Power Dissipation Figure 3. Maximum Continuous Drain Current

vs Case Temperature vs Case Temperature

250 80
225
PD, Power Dissipation (W)

70
200
ID, Drain Current (A)

60
175
150 50

125 40
100 30
75
20
50
25 10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175

TC, Case Temperature (oC) TC, Case Temperature (oC)

Figure 4. Typical Output Characteristics Figure 5. Typical Drain-to-Source ON Resistance

.
vs Gate Voltage and Drain Current

140 0.05
PULSE DURATION = 10 µS PULSE DURATION =10 µS
VGS = 15V DUTY FACTOR = 0.5% MAX DUTY FACTOR = 0.5% MAX
RDS(ON), Drain-to-Source

120 VGS = 10V TC = 25 oC TC = 25 oC

0.04
ID, Drain Current (A)

ON Resistance (Ω)

VGS = 9V VGS = 8V
100

80 0.03 ID = 100A
ID = 50A
VGS = 7V
60 ID = 25A
0.02 ID = 12.5A
40 VGS = 6V
0.01
20 VGS = 5.5V
VGS = 5V
0 0.00
0 5 10 15 20 4 5 6 7 8 9 10 11 12 13 14 15

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

FTP11N08 REV. B June 2007

©2007 InPower Semiconductor Co., Ltd. Page 4 of 11
 Figure 6. Maximum Peak Current Capability

1000
IDM, Peak Current (A)

TRANSCONDUCTANCE
100 MAY LIMIT CURRENT IN
THIS REGION

FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
10 CURRENT AS FOLLOWS:

150 – T C
I = I 25 ----------------------
VGS = 10V 125

1
10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0
tp, Pulse Width (s)

Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching

Capability
120 1000
PULSE DURATION = 10 µs
ID, Drain-to-Source Current (A)

DUTY CYCLE = 0.5% MAX IAS, Avalanche Current (A)

100 TC=25°C

STARTING TJ = 25 oC
80 100

60
STARTING TJ = 150 oC
40 10
+175 oC
+25 oC
20 If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
-55 oC If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0 1
3.0 4.0 5.0 6.0 7.0 8.0 1E-6 10E-6 100E-6 1E-3 10E-3

VGS, Gate-to-Source Voltage (V) tAV, Time in Avalanche (s)

Figure 9. Typical Drain-to-Source ON Figure 10. Typical Drain-to-Source ON Resistance

Resistance vs Drain Current vs Junction Temperature
0.018 2.00
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
RDS(ON), Drain-to-Source

TC=25°C 1.75
RDS(ON), Drain-to-Source

Resistance (Normalized)

0.016
ON Resistance (Ω)

1.50
0.014
1.25
0.012 V
GS
= 10V
1.00

0.010 PULSE DURATION = 10 µs

0.75
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 50A
0.008 0.50
0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 175

ID, Drain Current (A) TJ, Junction Temperature (oC)

FTP11N08 REV. B June 2007

©2007 InPower Semiconductor Co., Ltd. Page 5 of 11
 Figure 11. Typical Breakdown Voltage vs Figure 12. Typical Threshold Voltage vs
Junction Temperature Junction Temperature
1.15 1.15
Breakdown Voltage (Normalized)

1.10

VGS(TH), Threshold Voltage

BVDSS, Drain-to-Source

1.10 1.05
1.00

(Normalized)
1.05 0.95
0.90
1.00 0.85
0.80
0.95 0.75
VGS = 0V VGS = VDS
ID = 250 µA
0.70
ID = 250 µA
0.90 0.65
-75 -50 -25 0.0 25 50 75 100 125 150 175 -75 -50 -25 0.0 25 50 75 100 125 150 175

TJ, Junction Temperature (oC) TJ, Junction Temperature (oC)

Figure 13. Maximum Forward Bias Safe Figure 14. Typical Capacitance vs
Operating Area Drain-to-Source Voltage

1000 10000
Ciss
10µs

100.0 100 Coss

C, Capacitance (pF)

µ
ID, Drain Current (A)

1000
1 ms
10.0
10m
s Crss
DC
OPERATION IN THIS AREA 100
MAY BE LIMITED BY R VGS = 0V, f = 1MHz
1.0 DS(ON)
Ciss = Cgs + Cgd
TJ = MAX RATED, TC = 25 oC Coss ≅ Cds + Cgd
Single Pulse Crss = Cgd
0.1 10
1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain Voltage (V)

Figure 15. Typical Gate Charge vs Gate-to- Figure 16. Typical Body Diode Transfer
Source Voltage Characteristics
12 150
VGS, Gate-to-Source Voltage (V)

VDS = 19V
ISD, Reverse Drain Current (A)

10 VDS = 37V 125

VDS = 56V
8 100
175 oC

6 75 o
25 C

4 50

2 25
ID = 75A VGS = 0V
0 0
0 10 20 30 40 50 60 70 80 90 100 0.2 0.4 0.6 0.8 1.0 1.2

QG , Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V)

FTP11N08 REV. B June 2007

©2007 InPower Semiconductor Co., Ltd. Page 6 of 11
 Test Circuits and Waveforms

VDS
ID
ID
VDS VGS
Miller
Region
VGS
VDD
D.U.T.
VGS(TH)

1 mA
Qgs Qgd
Qg

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform

VDS
RL 90%
VDS

VGS
VDD
RG D.U.T.
10%
VGS

td(ON) trise td(OFF) tfall

Figure 19. Resistive Switching Test Circuit Figure 20. Resistive Switching Waveforms

FTP11N08 REV. B June 2007

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 Test Circuits and Waveforms

di/dt adj. Current

Pump

di/dt = 100A/µA
ID
Double Pulse

D.U.T. VDD
Qrr
L
trr

ID

Figure 22. Diode Reverse Recovery Waveform

Figure 21. Diode Reverse Recovery Test Circuit

BVDSS

Series Switch
(MOSFET)
L
IAS

BVDSS

D.U.T. VDD VDD

Commutating
Diode
0 tAV

VGS 50Ω
IAS
VGS tp

I 2L
E AS = AS
2

Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms

FTP11N08 REV. B June 2007

©2007 InPower Semiconductor Co., Ltd. Page 8 of 11
 TO-220 Package For Assembly Lot Codes Ending With: xxxxxH

H Minimum, Average, Maximum,

Symbol
mm mm mm
A 3.75 dia 3.85 dia 3.95 dia
B 25.7 26.0 26.3
C 12.10 12.25 12.40
D 3.50 3.60 3.70
J E 2.70 2.75 2.80
F 15.9 16.0 16.1
G 10.1 10.3 10.5
H 1.20 1.30 1.40
K
J 4.40 4.56 4.67
K 2.10 2.60 3.10
M 0.40 0.54 0.60
M
a 1.30 1.40 1.50
b 1.30 1.40 1.50
c 0.70 0.80 0.90
d --- 0.10 ---
G e 2.42 2.54 2.66
A e1 4.83 5.08 5.33
E

a B
d

c e
e1
FTP11N08 REV. B June 2007
©2007 InPower Semiconductor Co., Ltd. Page 9 of 11
 TO-220 Package For Assembly Lot Codes Ending With: xxxxxS

H Minimum, Average, Maximum,

Symbol
mm mm mm
A 3.75 dia 3.85 dia 3.95 dia
B 25.7 26.0 26.3
C 12.35 12.50 12.65
D 3.40 3.50 3.60
J E 2.72 2.743 2.80
F 15.9 16.0 16.1
G 10.1 10.3 10.5
H 1.07 1.17 1.27
K
J 4.47 4.57 4.67
K 2.04 2.67 2.92
M 0.46 0.56 0.57
M
a 1.27 1.35 1.55
b 1.22 1.27 1.32
c 0.800 0.813 0.860
d --- 0.10 ---
G e 2.29 2.54 2.79
A e1 4.83 5.08 5.33
E

C
F

d a B

c e
e1
FTP11N08 REV. B June 2007
©2007 InPower Semiconductor Co., Ltd. Page 10 of 11
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function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant
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agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed.

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InPower Semiconductor Co., Ltd’s products are not authorized for use as critical components in life support devices or
systems without the expressed written approval of InPower Semiconductor Co., Ltd.

As used herein:
1. Life support devices or systems are devices or systems which:
a. are intended for surgical implant into the human body,
b. support or sustain life,
c. whose failure to perform when properly used in accordance with instructions
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FTP11N08 REV. B June 2007

©2007 InPower Semiconductor Co., Ltd. Page 11 of 11