Sanken General Semiconductors Catalog

Bulletin No
Sanken Electric Co., Ltd. O03EE0

Overseas Sales Headquarters （Apr, 2010）
SEMICONDUCTORS GENERAL CATALOG 2010

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WORLDWIDE SALES OFFICES
SEMICONDUCTORS GENERAL CATALOG

Asia-Pacific
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Europe
United Kingdom
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North America
United States
Allegro MicroSystems, Inc.
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Worcester, Massachusetts 01606, U.S.A.
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Fax: 1-508-853-7895

14 Hughes Street, Suite B105
Irvine, California 92618, U.S.A.
Te l : 1-949-460-2003
Fax: 1-949-460-7837
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under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad. H1-O03EE0-1004015ND
http://www.sanken-ele.co.jp/en/
Warning
● The contents in this document are subject to changes, for improvement and other purposes,
without notice.
● Be sure to check the delivery specifications before using these products.
● The operation and circuit examples in this document are provided for reference purposes
only. Sanken assumes no liability for violation of industrial property, intellectual property, or
other rights of Sanken or third parties, that stem from these examples.
● The user must take responsibility for considering and determining which objects the
products in this document are used with.
● Although we will continue to improve the quality and reliability of our products,
semiconductor products, by their nature, have certain fault and failure rates. The user must
take responsibility for designing and checking to secure the device and system so that a part
failure may not lead to human injury, fire, damages, or other losses.
● The products in this document are intended for normal electronic devices (such as home
appliances, office equipment, communication terminals, or measurement devices).
If you are considering using our products for a device that requires high reliability (such as
transport machines and their control units, traffic light control systems, disaster prevention,
and security equipment or any kind of safety equipment), make sure that you consult our
sales representative.
Do not use these products for devices that require extremely high reliability (such as
aerospace instruments, nuclear power control units, or life support systems).
● The products in this document are not designed to be radiation-proof.
● The contents in this document must not be transcribed or copied without our written consent.
SANKEN
SEMICONDUCTORS
C O N T E N T S
1 ICs
1-1 Regulator ICs ....................................................................................................................... 6
1-1-1 Linear Regulator ICs ............................................................................................ 9
1-1-2 Switching Mode Regulator ICs ......................................................................... 33
1-1-3 Multi-Output Type Regulator ICs ...................................................................... 89
1-2 Motor Driver ICs ................................................................................................................ 98
1-2-1 2-Phase Stepper Motor Unipolar Driver ICs ................................................. 100
1-2-2 3-Phase Stepper Motor Driver ICs ................................................................ 126
1-2-3 5-Phase Stepper Motor Driver ICs ..................................................................... 128
1-2-4 Brush DC Motor Driver ICs ................................................................................ 130
1-2-5 Brushless DC Motor Driver ICs .......................................................................... 132
1-2-6 High Voltage 3-Phase Motor Driver IPMs .......................................................... 134
2 Transistors
2-1 Transistors ...................................................................................................................... 153
2-2 MOS FETs ....................................................................................................................... 162
2-3 IGBT ................................................................................................................................. 166
2-4 Transistors and MOS FET Arrays ................................................................................ 170
3 Thyristors
3-1 Thyristors ........................................................................................................................ 188
3-2 Triacs ............................................................................................................................... 190
4 Diodes
4-1 Rectifier Diodes .............................................................................................................. 201
4-2 Fast Recovery Diodes ................................................................................................... 203
4-3 Ultrafast Recovery Diodes ............................................................................................ 205
4-4 Schottky Barrier Diodes ................................................................................................ 208
4-5 High Voltage Rectifier Diodes ...................................................................................... 211
4-6 Power Zener Diodes ...................................................................................................... 212
4-7 Silicon Varistors ............................................................................................................. 213
Part Number Index ........................................................................ 216

ICs
1
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Ordering Information & Standard Packing Quantities ................ 4

1-1 Regulator ICs ............................................................................ 6
Selection Guide ........................................................................ 6
1-1-1 Linear Regulator ICs ................................................... 9
Application Note ........................................................... 9
1-1-2 Switching Mode Regulator ICs ................................. 33
Application Note ......................................................... 33
1-1-3 Multi-Output Type Regulator ICs ............................. 89
Application Note ......................................................... 89
1-2 Motor Driver ICs ..................................................................... 98
Selection Guide ...................................................................... 98
Application Note ..................................................................... 99
1-2-1 2-Phase Stepper Motor Unipolar Driver ICs ........ 100
1-2-2 3-Phase Stepper Motor Driver ICs ......................... 126
1-2-3 5-Phase Stepper Motor Driver ICs ......................... 128
1-2-4 Brush DC Motor Driver ICs ..................................... 130
1-2-5 Brushless DC Motor Driver ICs .............................. 132
1-2-6 High-voltage 3-phase Motor Driver IPMs .............. 134
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1 ICs
Ordering Information
All products listed must be ordered in standard packing increments.
Series Name/ Standard Packing Quantities Series Name/ Standard Packing Quantities
Package Package
Product Name Bulk Taping Product Name
Bulk Taping
PG001M DIP16 1000 – SLA6805MP SLA23Pin LF.No.2151/2152:648 –
SAI PS4(Surface-mount) – 2000 SLA6845M SLA24Pin LF.No.2171:648 –
SCM1100M SCM 250 – SLA6868M/ SLA24Pin LF.No.2171:648 –
SI-3000KD TO263-5(Surface-mount) – 800 SLA682xM LF.No.2175:540
SI-3000KF TO220F-5 2000 – SLA7022MU/ ZIP15 with Fin 1080 –
SI-3000KM TO252-5(Surface-mount) – 3000 7029M (SLA15Pin)
SI-3000KS SOP8(Surface-mount) – 1000 SLA7024M/ ZIP18 with Fin 1080 –
SI-3000KWM TO252-5(Surface-mount) – 3000 7026M/7027MU (SLA18Pin)
SI-3000LLSL SOP8(Surface-mount) – 1000 SLA703xM ZIP18 with Fin 1080 –
SI-3000LSA SOP8(Surface-mount) – 1000 (SLA18Pin)
SI-3000LU SOT89-5(Surface-mount) – 1000 SLA7042M/7044M ZIP18 with Fin 1080 –
SI-3000ZD TO263-5(Surface-mount) – 800 (SLA18Pin)
SI-3000ZF TO220F-5 2000 – SLA705xM ZIP18 with Fin 1080 –
SI-7321M HSOP44(Surface-mount) – 2000 (SLA18Pin)
SI-7510 DIP30 680 – SLA706xM ZIP21 with Fin 1080 –
SI-8000E TO220F-5 2000 – (SLA21Pin)
SI-8000FD TO263-5(Surface-mount) – 800 SLA707xMR/MPR ZIP23 with Fin 1080 –
SI-8000FFE TO220F-5 2000 – (SLA23Pin)
SI-8000GL DIP8 2500 – SLA708xMR/MPR ZIP23 with Fin 1080 –
SI-8000HD TO263-5(Surface-mount) – 800 (SLA23Pin)
SI-8000HFE TO220F-5 2000 – SLA7611M ZIP18 with Fin 1080 –
SI-8000JD TO263-5(Surface-mount) – 800 (SLA18Pin)
SI-8000JF TO220F-5 2000 – SMA682xMP SMA24Pin LF.No.2451:1080 –
SI-8000Q HSOP8(Surface-mount) – 1000 LF.No.2452:1008
SI-8000S TO220F-5 2000 – SMA686xM SMA24Pin LF.No.2451:1080 –
SI-8000SD TO263-5(Surface-mount) – 800 LF.No.2452:1008
SI-8000TFE TO220F-5 2000 – SMA7022MU/ ZIP15 1440 –
SI-8000TM TO252-5(Surface-mount) – 3000 7029M (SMA15Pin)
SI-8000W SOP8(Surface-mount) – 1000 SMA7036M ZIP15(SMA15Pin) 1440 –
SI-8000Y TO220F-7 2000 – SPI-6631M HSOP16
SI-8011NVS TSSOP24 – 2800 SPI-721xM HSOP16 – 1400
SI-8100QL DIP8 2500 – SPI-8000A HSOP16 – 1400
SI-8205NHD HSOP8 – 1000 SPI-8000TW HSOP16 – 1400
SI-8400L Non–package type 864 – STA6940M ZIP18(STA18Pin) LF.No434:1785 –

(EI-12.5 core) STA801M SIP10(STA10Pin) 100 –
SI-8405NH SOP8(Surface-mount) – 1000 STA810M SIP8(STA8Pin) 100 –
SI-8405NL SOP8(Surface-mount) – 1000 STA820M SIP8(STA8Pin) 100 –
SI-8500L Non–package type 320 – SX68000M SOP27 – 1000

(EI-19 core)
SI-8511NVS TSSOP24 – 2800
4 ICs
1 ICs
ICs 5
1-1 Regulator ICs
Selection Guide
Linear Regulator ICs (low dropout voltage, built-in overcurrent, thermal protection circuits)
Surface-Mount Type
Output Current Output Voltage Variable (Reference Voltage)
Series Name (V) (V) Package Low Current Output Overcurrent Page
Consumption Protection
During OFF ON/OFF Characteristic
(A) 1.8 2.5 3.3 5 9 12 1.0 1.1 1.25 1.28
SI-3000LU 0.25 SOT89-5 Drooping 10
SI-3000LSA 1.0 SOP8 Foldback 12
SI-3000KS 1.0 SOP8 Drooping 14
SI-3000KM 1.0 TO252-5 Foldback*1 16
SI-3000KD 1.0 TO263-5 Foldback*2 20
SI-3000LLSL 1.5 SOP8 Foldback 24
SI-3000ZD 3.0 TO263-5 Foldback 26
*1: Drooping for SI-3012KM/3025KM/3033KM

*2: Drooping for SI-3012KD/3033KD
Thru-Hole Type
Output Current Variable (Reference Voltage)
Series Name (V) Package Low Current Output Overcurrent Page

(A) 1.0 1.1
SI-3000KF 1.0 TO220F-5 Foldback 28
SI-3000ZF 3.0 TO220F-5 Foldback 30
6 ICs
1-1 Regulator ICs
Switching Mode Regulator ICs (built-in overcurrent, thermal protection circuits)
Surface-Mount Type
Output Current Output Voltage Variable (Reference Voltage) Maximum
Input
Series Name (V) (V) Voltage Package Low Current Output Overcurrent Page
(A) 3.3 5 9 12 0.5 0.8 1.0 (V)
0.4
SAI 35 PS4 – – Drooping 34
0.5
SI-8000W 0.6 35 SOP8 – – Drooping 36
SI-8000JD 1.5 43 TO263-5 Foldback 38
SI-8000TM 1.5 43 TO252-5 Drooping 40
SI-8000SD 3.0 43 TO263-5 – Drooping 42
SPI-8000A 3.0 53 HSOP16 Foldback 44
SI-8000Q* 3.5 30 HSOP8 Drooping 48
SI-8000FDE 3.5 43 TO263-5 – Drooping 50
SI-8000FDL 3.5 43 TO263-5 Drooping 50
SI-8000HD 5.5 43 TO263-5 Drooping 52

*:Current Mode Control
Thru-Hole Type
Output Current Output Voltage Variable (Reference Voltage) Maximum
Input
Series Name (V) (V) Voltage Package Low Current Output Overcurrent Page
(V) During OFF ON/OFF Characteristic
(A) 3.3 5 9 12 15 0.5 0.8 1.0 1.5
SI-8000E 0.6 43 TO220F-5 – – Drooping 54
SI-8000JF 1.5 43 TO220F-5 Foldback 56
SI-8000TFE 1.5 43 TO220F-5 Drooping 58
SI-8000GL 1.5 53 DIP8 Foldback 60
SI-8000S 3.0 43*1 TO220F-5 – Drooping 62
SI-8100QL*2 3.5 30 DIP8 Drooping 64
SI-8000FFE 3.5 43 TO220F-5 – Drooping 66
SI-8000HFE 5.5 43 TO220F-5 Drooping 68
SI-8100Y*2 8.0 45 TO220F-7 Drooping 70
*1: 35V for SI-8033S

Surface-Mount, Synchronous Rectifier Type *2:Current Mode Control
Oscillation Frequency Variable (Reference Voltage) Maximum

Input
Series Name (V) Voltage Package Low Current Output Overcurrent Page
(A) 0.5 1.1 (V)
SI-8011NVS – 25 TSSOP24 – Foldback 72
SI-8405NL – 6 SOP8 – Drooping 74
SI-8511NVS – 25 TSSOP24 – Drooping 76
SI-8405NH – 6 SOP8 – Drooping 78
SI-8205NHD 3.0 46 HSOP8 Drooping 80
Flywheel Diode (Schottky-Barrier Diode) Built-in Type

Output Current Output Voltage Maximum
Input
(A) 5 6.5 (V)
STA810M 1.5 43 SIP8 (STA8Pin) Foldback 82
STA820M 3.0 31 SIP8 (STA8Pin) – Drooping 84
L-Combined Type
Output Current Output Voltage Maximum
Input
(A) 5 (V)
Non-package
SI-8400L 0.5 35 type (EI-12.5 core) – – Drooping 86
Non-package
SI-8500L 1.0 35 type (EI-19 core) – Drooping 86
ICs 7
1-1 Regulator ICs
Multi Output Type Regulator ICs
2-Output Type
Output Voltage Output Current Functions Low Current
Series Name Package Regulator Type Thermal ON/OFF Consumption Remarks Page
Overcurrent Protection During OFF
(V) (A) Protection Control
Built i-in flywheel diode

ch1 5.0 0.5 Step-down switching type Drooping ™ ™ –
(Schottky-barrier diode)
STA801M SIP10 90
Select from 9, 11.5, (STA10Pin) Built i-in flywheel diode
ch2
12.1 and 15.5
0.5 Step-down switching type Drooping ™ ™ –
(Schottky-barrier diode)
ch1 Variable(1.0-16V) 1.5 Foldback ™ ™

SPI-8001TW HSOP16 Step-down switching type ™ 92
SPI-8002TW HSOP16 Step-down switching type ™ 92
SPI-8003TW HSOP16 Step-down switching type ™ Frequency Variable 92
SI-3002KWM
ch1 3.3 1.0
TO252-5 Linear type
Foldback ™ ™ – 96
ch2 2.5 1.0 Foldback ™ ™
8 ICs
1-1-1 Linear Regulator ICs
Application Note
■ Heat dissipation and Reliability ■ Mounting Torque
The reliability of an IC is highly dependent on its operating temperature. SI-3000KF 
 0.588 to 0.686 [N•m] ( 6.0 to 7.0 [kgf•cm] )
Please be sure to apply silicone grease to the IC and to mount it to the SI-3000ZF 
heatsink with a proper mounting torque.
Heatsink design should pay particular attention to ensuring sufficient heat
dissipation capacity. ■ Recommended Silicone Grease
In addition, please take into account the air convection in operation.
• Shin-Etsu Chemical Co., Ltd.: G746
• Momentive Performance Materials Inc.: YG-6260
■ Calculating Internal Power Dissipation(PD) • Dow Corning Toray Silicones Co., Ltd.: SC102
Please select proper silicone grease carefully since the oil in some grease
PD is given by the following formula: products may penetrate the device and result in an extremely short device
PD=IO • [VIN(mean)–VO] life.
Determine the size of the heatsink according to the relationship between
allowable power dissipation and ambient temperature.
■ Others
■ Setting DC Input Voltage • Devices can not be operated in parallel connection aiming for a larger cur-
rent.
The following is the waveform of a DC input voltage. • Diodes for isolation purpose are provided in between input and ground, and
Input Ripple also in between output and ground. They may be broken down if the device is
reverse biased. In this case, please clamp the device with low VF diodes to
protect them.
VIN (mean)
VIN (max.)
VIN (min.)
■ Rectifier Diodes for Power Supplies

To rectify the AC input voltage using rectifier diodes for power supplies,
please use SANKEN rectifier diodes shown in the following list. (Please
When setting the DC input voltage, please follow the instructions below:
use a center-tap or bridge configuration in using stand-alone type diodes.)
●Make VIN(min) ≥ [ (Output voltage) + (Minimum dropout voltage) ]
●Make VIN(max) ≤ DC input voltage shown in the "Absolute Maximum Ratings"
Series Name Diodes

■ Thermal Design SI-3000LU Series
SI-3000LSA Series
The maximum junction temperature Tj(max) given in the absolute maximum rat- SI-3000KS Series
ings is specific to each product type and must be strictly observed. Thus, ther- SI-3000KM Series SJPM-H4(Surface-Mount Stand-Alone Type,VRM:400V,IO:2.0A)
mal design must consider the maximum power dissipation PD(max), which var- SI-3000KD Series
SI-3000LLSL Series
ies by the conditions of use, and the maximum ambient temperature Ta(max).
SI-3000ZD Series
To simplify thermal design, Ta-PD characteristic graphs are provided herein. SI-3000KF Series AM01Z(Axial Type, VRM:200V, IO:1.0A)
Please observe the following steps for heatsink design: SI-3000ZF Series RM10Z(Axial Type, VRM:200V, IO:1.5A)
1. Obtain the maximum ambient temperature Ta(max).
2. Obtain the maximum power dissipation PD(max).
3. Look for the intersection point on the Ta-PD characteristic graph and deter-
mine the size of the heatsink.
Although the heatsink size is now obtained, in actual applications, 10-to-20%
derating factor is generally introduced. Moreover, the heat dissipation capacity
of a heatsink highly depends on how it is mounted. Thus, it is recommended to
measure the heatsink and case temperature in the actual operating environ-
ment.
Please refer to the Ta-PD characteristic graphs for respective product types.
ICs 9
SI-3000LU Series Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs
■Features ■Absolute Maximum Ratings (Ta=25°C)

• Compact surface-mount package (SOT89-5) Parameter Symbol Ratings Unit
DC Input Voltage VIN 18 V
• Output current: 250 mA
Output control terminal voltage VC VIN V
• Low current consumption lq (OFF) ≤ 1µA (VC = DC Output Current IO 250 mA
0 V) Power Dissipation PD*1 0.75 W
• Low dropout voltage: VDIF ≤ 0.5 V (at IO = 250 Junction Temperature Tj*2 –40 to +135 °C
mA) Storage Temperature Tstg*2 –40 to +125 °C
Thermal Resistance (Junction to Ambient Air) θ j-a*1 146 °C/W
• Output voltage range (1.5V to 15V)
*1: When mounted on glass-epoxy board 40 × 40 mm (copper laminate area 2%).
• Built-in drooping-type-overcurrent and thermal *2: Thermal protection circuits may operate if the junction temperature exceeds 135°C.
protection circuits
■Applications
• Auxiliary power supplies for PC
• Battery-driven electronic equipment
■Recommended Operating Conditions

Ratings
Parameter Symbol Unit
min. max.
Input Voltage VIN *2, *3 VO+2*1 V
DC Output Current IO 0 250 mA
Operating Ambient Temperature Top –20 85 °C
*1: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) × IO.
Calculate these values referring to the reference data on page 11.
*2: Refer to the Dropout Voltage parameter.
*3: For the SI-3012LU, set the input voltage to Vin ≥ 2.4 V, and secure the minimum voltage as explained in "Setting DC Input Voltage" section in Linear Regulator Application Note.
■Electrical Characteristics (Ta=25°C, VC=2V unless otherwise specified)

Ratings
Parameter Symbol SI-3012LU(Variable) Unit
min. typ. max.
VADJ 1.210 1.250 1.290
Reference Voltage V
Conditions VIN=VO+1V, IO =10mA
VDIF 0.3
Conditions IO=100mA(VO =3.3V)
Dropout Voltage V
0.5
Conditions IO=250mA(VO =3.3V)
∆VLINE 10
Line Regulation VIN=VO+1 to VO+5V, mV
Conditions
IO=10mA( VO=3.3V)
∆VLOAD 20
Load Regulation VIN=VO +1V, mV
Conditions
IO=1 to 250mA( V O=3.3V)
Temperature Coefficient of ∆VO/∆Ta ±0.3
mV/ °C
Reference Voltage Conditions Tj=0 to 100°C
RREJ 55
Ripple Rejection VIN=VO +1V , dB
Conditions
f=100 to 120HZ( VO=3.3V)
Iq 150
Quiescent Circuit
VIN=VO+1V, IO =0mA µA
Current Conditions
VC=2V, R2=100kΩ
Iq(OFF) 1
Circuit Current at Output OFF µA
Conditions VIN=VO+1V, VC=0V
Overcurrent Protection IS1 260
mA
Starting Current*1 Conditions VIN=VO +1V
Control Voltage (Output ON)*2 VC, IH 2.0
V
Control Voltage (Output OFF)*2 VC, IL 0.8
VC IC, IH 40
Control Current (Output ON) µA
Terminal Conditions VC=2V
IC, IL 0 –5
Control Current (Output OFF) µA
Conditions VC=0V
*1: Is1 is specified at the 5% drop point of output voltage VO on the condition that VIN = 3.3 V, and IO = 10 mA.
*2: Output is OFF when the output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
10 ICs
SI-3000LU Series
■External Dimensions (SOT89-5) (Unit : mm)
4.5±0.05
1.6±0.05 0.4±0.03
Pin Assignment
0.90±0.1
4.2±0.05 4.2±0.05 4.2±0.05 0.1±0.05
t r
q ADJ
0.40
w GND
.0
±0.0
5) e VC
( φ1
2.5±0.05
4.3±0.05
r VIN
t VO
4.2±0.05 4.7±0.05 4.2±0.05 Plastic Mold Package Type

0.90±0.1
q w e
Flammability: UL94V-0
Product Mass: Approx. 0.05g
1.5±0.05
1.5±0.05 1.5±0.05
0.4±0.05
■Block Diagram
SI-3012LU
VIN 4 5 VO
VC 3 1 ADJ
TSD
+
– 2 GND
REF
■Standard External Circuit
SI-3012LU CO: Output capacitor (10 µF or larger)

VIN VO For SI-3000LU series, Co has to be a low ESR capacitor such as a
4 5
ceramic capacitor.
CIN R1
+ 3
1 CIN: Input capacitor (10 µF approx.)
Load
VIN
GND
2
ADJ
R2 •Setting of SI-3012LU output voltage (recommended voltage: 1.5 V to 15 V)
R1 and R2: Resistors for output setting
VC
The output voltage can be set by connecting R1 and R2 as shown in the
diagram on the left.
R2: 100 kΩ is recommended
R1=(VO–VADJ)/(VADJ/R2)
■Reference Data
Copper Laminate Area vs Power Dissipation

Tj=100°C PCB size 40×40
• A monolithic ICs mounts an inner frame stage that is connected to the
1 GND pin (pin 2). Therefore, enlarging the copper laminate area connected
Ta=25°C
0.9 Ta=40°C to the GND pin improves heat radiation effect.
Ta=60°C
0.8 • Obtaining the junction temperature
Power Dissipation PD (W)
Ta=85°C
0.7
Measure the temperature TC at the lead part of the GND pin (pin 2) with a
0.6
Case temperature Tc
thermocouple, etc. Then, substitute this value in the following formula to
0.5
0.4
measurement point obtain the junction temperature.
0.3 T j=P D×θ j–c+Tc (θ j–c=5 ° C/W)
0.2
0.1
0
10 100 1000
Copper Laminate Area (mm2)
ICs 11
SI-3000LSA Series Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs

• Compact surface-mount package (SOP8) Parameter Symbol Ratings Unit
• Output current: 1 A DC Input Voltage VIN 16 V
Output control terminal voltage VC VIN V
• Low circuit current at output OFF: Iq(OFF) ≤ 1 DC Output Current IO 1 A
µA (VC = 0 V) PD1*1 1.16 W
Power Dissipation
• Low dropout voltage: VDIF≤0.8 V (at IO = 1 A) PD2*2 1.1 W
Junction Temperature Tj*3 –30 to +150 °C
VDIF ≤1.2 V (IO = 1 A) for SI-3018LSA
Operating Ambient Temperature Top –30 to +150 °C
• 4 types of output voltages (1.8 V, 2.5 V, 3.3 V, Storage Temperature Tstg –30 to +150 °C
5.0 V) available Thermal Resistance (Junction to Lead (pin 8)) θ j-L 36 °C/W
• Output ON/OFF control terminal voltage Thermal Resistance (Junction to Ambient Air) θ j-a *2 100 °C/W
compatible with LS-TTL *1: When mounted on glass-epoxy board 56.5 × 56.5 mm (copper laminate area 100%).
*2: When mounted on glass-epoxy board 40 × 40 mm (copper laminate area 100%).
• Built-in foldback-type-overcurrent and thermal
*3: Thermal protection circuits may be activated if the junction temperature exceeds 135°C.
protection circuits
■Applications
• Auxiliary power supplies for PC

Ratings
SI-3018LSA SI-3025LSA SI-3033LSA SI-3050LSA
DC Input Voltage Range VIN 3.1 to 3.5*1 *2 to 3.5*1 *2 to 5.2*1 *2 to 8.0 V
DC Output Current Range IO 0 to 1 A
Operating Junction Temperature Tjop –20 to +125 °C
Operating Ambient Temperature Taop –30 to +85 °C
*1: VIN (max) and IO (max) are restricted by the relation PD = (VIN – VO) × IO.
Please calculate these values referring to the reference data on page 13.

Ratings
Parameter Symbol SI-3018LSA SI-3025LSA SI-3033LSA SI-3050LSA Unit
min. typ. max. min. typ. max. min. typ. max. min. typ. max.
VO 1.764 1.800 1.836 2.450 2.500 2.550 3.234 3.300 3.366 4.90 5.00 5.10
Output Voltage V
Conditions VIN=3.3V, IO=0.5A VIN=3.3V, IO=0.5A VIN=5V, IO=0.5A VIN=6V, IO=0.5A
VDIF – 0.4 0.4 0.4
Conditions – IO≤0.5A IO≤0.5A IO≤0.5A
Dropout Voltage V
0.6 1.2 0.8 0.8 0.8
Conditions IO≤1A
∆VLINE 2 10 2 10 3 10 3 15
Line Regulation mV
Conditions VIN=3.1 to 3.5V, IO=0.3A VIN=3.1 to 3.5V, IO=0.3A VIN=4.5 to 5.5V, IO=0.3A VIN=6 to 7V, IO=0.3A
∆VOLOAD 10 20 10 20 10 20 10 30
Load Regulation mV
Conditions VIN=3.3V, IO=0 to 1A VIN=3.3V, IO=0 to 1A VIN=5V, IO=0 to 1A VIN=6V, IO=0 to 1A
Temperature Coefficient of ∆VO/∆Ta ±0.3 ±0.3 ±0.3 ±0.5
mV/ °C
Output Voltage Conditions VIN=3.3V, IO=5mA, Tj=0 to 100°C VIN=3.3V, IO=5mA, Tj=0 to 100°C VIN=5V, IO=5mA, Tj=0 to 100°C VIN=6V, IO=5mA, Tj=0 to 100°C
RREJ 60 57 55 55
Ripple Rejection dB
Conditions VIN=3.3V, f=100 to 120HZ VIN=3.3V, f=100 to 120HZ VIN=5V, f=100 to 120HZ VIN=6V, f=100 to 120HZ
Iq 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5
Quiescent Circuit Current mA
Conditions VIN=3.3V, IO=0A VIN=3.3V, IO=0A VIN=5V, IO=0A VIN=6V, IO=0A
Iq(OFF) 1 1 1 1
Conditions VIN=3.3V, IO=0A, VC=0V VIN=3.3V, IO=0A, VC=0V VIN=5V, IO=0A, VC=0V VIN=6V, IO=0A, VC=0V
Overcurrent Protection IS1 1.2 1.2 1.2 1.2
A
Starting Current*1,3 Conditions VIN=3.3V VIN=3.3V VIN=5V VIN=6V
Control Voltage (Output ON)*2 VC, IH 2.0 2.0 2.0 2.0
V
Control Voltage (Output OFF)*2 VC, IL 0.8 0.8 0.8 0.8
VC IC, IH 40 80 40 80 40 80 40 80
IC, IL 0 –5 0 –5 0 –5 0 –5
Conditions VC=0V
*1: Is1 is specified at the 5% drop point of output voltage VO on the condition that VIN = 3.3 V (5 V for SI-3033LSA), and IO = 0.5 A.
*2: Output is OFF when the output control terminal VC is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
*3: These products cannot be used in the following applications. Because these applications require a certain current at start-up and so the built-in foldback-type overcurrent
protection may cause errors during start-up stage.
(1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) VO adjustment by raising ground voltage
12 ICs
SI-3000LSA Series
■External Dimensions (SOP8) (Unit : mm)
5.1±0.4
1.27 0.15+0.1
0.4±0.1 –0.05
Pin Assignment
q VIN
0.5±0.1
8 7 6 5 w NC (Leave open)
e VIN
6.2±0.3
4.4±0.2
r VC
t GND
1 2 3 4 y GND
u VO
1.27 i VO
°
10
0.995max. 0
to
1.55±0.15
1.5±0.1
Plastic Mold Package Type

0.05±0.05
0.10 Product Mass: Approx. 0.1g

0.4±0.1 0.12 M
■Block Diagram
VIN 1 8 VO
NC 2 7 VO
+
–
VIN 3 TSD 6
GND
VC 4 5 GND
■Typical Connection Diagram
VIN VO
1 8
CO: Output capacitor (22 µF or larger)
2
+
CIN 7
+ CIN: Input capacitor (10 µF)
3 6
Load
This capacitor is required in the case of an inductive input line or long

4 5
VIN wiring.
GND CO
Tantalum capacitors are recommended for CIN and CO, particularly at
VC
low temperatures.
* Leave pin 2 open.
■Reference Data
PCB Copper Laminate Area vs. Junction to Allowable Output Current
Ambient Air Thermal Resistance (vs. VIN-VOUT Voltage Difference)
VIN-IO max
150 1.2
PCB (glass-epoxy, 40×40mm) Tj = 120°C (20% derating of 150°C)

140
160mm (40×40) mm 1.0
130 The inner frame stage, on which the PTr is mounted,
is directly connected to the VOUT pin.
0.8
120 Therefore, enlarging the copper laminate area
Iout (max) (A)
θ j-a=100°C/W
θ j-a (°C/W)
around the VOUT pin is really effective for a heat ra-

110 0.6
diation.
100
0.4 Ta=25°C
90
0.2
80
Ta=85°C
70 0
100 1000 5000 1 2 3 4
Copper Laminate Area (mm ) 2 VIN-VOUT Voltage Difference (V)
ICs 13
SI-3000KS Series Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs

• Compact surface-mount package (SOP8) Parameter Symbol Ratings Unit
• Output current: 1.0 A DC Input Voltage VIN*1 17 V
Output Control Terminal Voltage VC VIN V
• Compatible with low ESR capacitor DC Output Current IO*1 1.0 A
• Low circuit current at output OFF Iq ≤ 350 µA Power Dissipation PD*1, *2 0.76 W
(IO = 0 A, VC = 2 V) Junction Temperature Tj –40 to +125 °C
Storage Temperature Tstg –40 to +125 °C
• Low current consumption Iq (OFF) ≤ 1 µA (VC
Thermal Resistance (Junction to Ambient Air) θ j-a 130 °C/W
= 0 V)
Thermal resistance (Junction to Lead (pin 7)) θ j-L 22 °C/W
• Low dropout voltage VDIF ≤ 0.6 V (IO = 1 A)
*1: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) × IO. Please calculate these values referring to the
• 3 types of output voltages (2.5 V, 3.3 V, and Copper laminate area vs. Power dissipation data as shown hereinafter.
variable type) available *2: When mounted on a glass epoxy board of 1600 mm2 (copper laminate area 2%).
• Output ON/OFF control terminal voltage

compatible with LS-TTL
• Built-in drooping-type-overcurrent and thermal
protection circuits
■Applications
• Local power supplies
■Electrical Characteristics (Ta=25°C, Vc=2 V unless otherwise specified)

Ratings
Parameter Symbol SI-3012KS (variable type) SI-3025KS SI-3033KS Unit
min. typ. max. min. typ. max. min. typ. max.
Input Voltage VIN 2.4 *1 *1 V
Output Voltage VO (VADJ) 1.24 1.28 1.32 2.45 2.50 2.55 3.234 3.300 3.366
V
(Reference voltage VADJ for SI-3012KS) Conditions VIN=3.3V, IO=10mA VIN=3.3V, IO=10mA VIN=5V, IO=10mA
VDIF 0.3 0.4 0.4
Conditions IO=0.5A (VO=2.5V) IO=0.5A IO=0.5A
Dropout Voltage V
0.6 0.6 0.6
Conditions IO=1A (VO=2.5V) IO=1A IO=1A
∆VOLINE 10 10 15
Line Regulation mV
Conditions VIN=3.3 to 8V, IO=10mA (VO=2.5V) VIN=3.3 to 8V, IO=10mA VIN=5 to 10V, IO=10mA
∆VOLOAD 40 40 50
Load Regulation mV
Conditions VIN=3.3V, IO=0 to 1A (VO=2.5V) VIN=3.3V, IO=0 to 1A VIN=5V, IO=0 to 1A
Iq 350 350 350
Quiescent Circuit Current µA
Conditions VIN=3.3V, IO=0A, VC=2V, R2=24kΩ VIN=3.3V, IO=0A, VC=2V VIN=5V, IO=0A, VC=2V
Iq (OFF) 1 1 1
Conditions VIN=3.3V, VC=0V VIN=3.3V, VC=0V VIN=5V, VC=0V
Temperature Coefficient of ∆VO/∆Ta ±0.3 ±0.3 ±0.3
mV/ °C
Output Voltage Conditions Tj=0 to 100°C (VO=2.5V) Tj=0 to 100°C Tj =0 to 100°C
RREJ 55 55 55
Ripple Rejection dB
Conditions VIN =3.3V, f=100 to 120HZ (VO=2.5V) VIN=3.3V, f=100 to 120HZ VIN=5V, f=100 to 120HZ
Overcurrent Protection IS1 1.2 1.2 1.2
A
Starting Current*2 Conditions VIN=3.3V (VO=2.5V) VIN=3.3V VIN=5V
Control Voltage (Output ON)*3 VC, IH 2.0 2.0 2.0
V
Control Voltage (Output OFF) VC, IL 0.8 0.8 0.8
VC IC, IH 40 40 40
IC, IL –5 0 –5 0 –5 0
Conditions VC=0V

*2: The Is1 is specified at the 5% drop point of output voltage VO on the condition that VIN = VO + 1 V, and IO = 10 mA.
14 ICs
SI-3000KS Series
5.1±0.4
1.27 Pin Assignment
0.4±0.1 0.15+0.1
–0.05
q VC
w VIN
0.5±0.1
8 7 6 5
e VO
r Sence (ADJ for SI-3012KS)
6.2±0.3
4.4±0.2
t GND
y GND
1 2 3 4
u GND
i GND
1.27
°
10
0.995max. 0
to
1.55±0.15
1.5±0.1
Flammability: UL 94V-0
Product Mass: Approx. 0.1 g
0.05±0.05
0.10
0.4±0.1 0.12 M
■Block Diagram
●SI-3012KS ●SI-3025KS, SI-3033KS
VIN 2 3 VO VIN 2 3 VO
4
VC 1 4 ADJ VC 1 Sense
TSD TSD
- -
+ +
8 8
7 7
REF 6 REF 6
5 GND 5 GND

●SI-3012KS ●SI-3025KS, SI-3033KS
VIN VO VIN VO
2 3 2 3
R1
sense
VC GND ADJ VC GND 4 Load
CIN CO Load CIN CO
1 4 1
5 to 8 5 to 8
R2 R2
R1, R2: Output voltage setting resistors CIN: Input capacitor (22 µF or larger)
The output voltage can be set by connecting R1 and R2 CO: Output capacitor (22 µF or larger)
as shown above. For SI-3000KS series, Co has to be a low ESR capacitor.
The recommended value of R2 is 24 kΩ . When using the electrolytic capacitor, the SI-3000KS series may oscillate at a low temperature.
R1=(VO–VADJ)÷(VADJ/R2)
■Reference Data
Copper Laminate Area vs. Copper Laminate Area vs.
Thermal Resistance Power Dissipation
Area of PC board : 40×40mm Tj=100°C Area of PC board : 40×40mm
140 1.2 • Obtaining the junction temperature
Ta=25°C Measure the temperature TL at the lead part of the GND
Ta=50°C
1 pin (pin 7) with a thermocouple, etc. Then, substitute
Thermal resistance θ j-a (°C/W)
120
Ta=80°C
Power dissipation PD (W)
this value in the following formula to obtain the junction

0.8
100 temperature.
0.6 Tj=PD × θ j–L + TL ( θ j–L = 22°C/W)
80
0.4
60
0.2
40 0
10 100 1000 10 100 1000
Copper laminate area (mm2) Copper laminate area (mm2)
(GND terminal) (GND terminal)
ICs 15
SI-3000KM Series Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs

• Compact surface mount package (TO252-5) Ratings
• Output current: 1.0 A Parameter Symbol SI-3012KM/ SI-3010KM/3050KM/ Unit
3025KM/3033KM 3090KM/3120KM
• Low dropout voltage: VDIF ≤ 0.6 V (at IO = 1.0 DC Input Voltage VIN 17 35*1 V
A) Output Control Terminal Voltage Vc VIN V
• Low current consumption: Iq ≤ 350 µA DC Output Current IO 1.0 A
(600 µA for SI-3010KM/SI-3050KM/SI- Power Dissipation PD*2 1 W

Junction Temperature Tj –30 to +125 °C
3090KM/SI-3120KM)
• Low circuit current at output OFF: Iq (OFF) ≤ 1 Thermal Resistance (Junction to Ambient Air) θ j-a 95 °C/W
µA Thermal Resistance (Junction to case) θ j-c 6 °C/W
• Built-in overcurrent and thermal protection *1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage
circuits of the electrical characteristics.
• Output ON/OFF control function *2: When mounted on glass-epoxy board of 900mm2 (copper laminate area 4.3%).
• Compatible with low ESR capacitors (SI-

3012KM/SI-3025KM/SI-3033KM)
■Applications
• Secondary stabilized power supply (local power supply)

Ratings
SI-3012KM SI-3025KM SI-3033KM SI-3010KM SI-3050KM SI-3090KM SI-3120KM
Input Voltage Range VIN 2.4*2 to 6.0*1 2.4*2 to 5*1 *2 to 6*1 2.4*2 to 27*1 2.4*2 to 17*1 *2 to 20*1 *2 to 25*1 V
Output Current Range IO 0 to 1.0 A
Operating Junction Temperature Tj –20 to +100 °C
*1: VIN (max) and IO (max) are restricted according to operating conditions due to the relation PD = (VIN-VO) × IO. Please calculate these values referring to the Copper Laminate Area
vs. Power Dissipation data as shown hereinafter.
■Electrical Characteristics 1 (Low Input Voltage type compatible with low ESR output capacitor)
Ratings
Parameter Symbol SI-3012KM (Variable type) SI-3025KM SI-3033KM Unit
Input Voltage VIN 2.4*1 *1 *1 V
Output Voltage VO (VADJ) 1.24 1.28 1.32 2.45 2.50 2.55 3.234 3.300 3.366
V
(Reference voltage VADJ for SI-3012KM) Conditions VIN=3.3V, IO=10mA VIN=3.3V, IO=10mA VIN=5V, IO=10mA
∆VOLINE 15 15 15
Line Regulation mV
Conditions VIN=3.3 to 8V, IO=10mA (VO=2.5V) VIN=3.3 to 8V, IO=10mA VIN=5 to 10V, IO=10mA
∆VOLOAD 40 40 50
Load Regulation mV
Conditions VIN=3.3V, IO=0 to 1A (VO=2.5V) VIN=3.3V, IO=0 to 1A VIN=5V, IO=0 to 1A
VDIF 0.4 0.4 0.4
Conditions IO=0.5A (VO=2.5V) IO=0.5A IO=0.5A
Dropout Voltage V
0.6 0.6 0.6
Conditions IO=1A (VO=2.5V) IO=1A IO=1A
Iq 350 350 350
Conditions VIN=3.3V, IO=0A, VC=2V, R2=24kΩ VIN=3.3V, IO=0A, VC=2V VIN=5V, IO=0A, VC=2V
Iq (OFF) 1 1 1
Conditions VIN=3.3V, VC=0V VIN=3.3V, VC=0V VIN=5V, VC=0V
Temperature Coefficient ∆VO/∆Ta ±0.3 ±0.3 ±0.3
mV/ °C
of Output Voltage Conditions Tj=0 to 100°C (VC=2.5V) Tj=0 to 100°C Tj=0 to 100°C
RREJ 55 55 55
Ripple Rejection dB
Conditions VIN=3.3V, f=100 to 120HZ (VO=2.5V) VIN=3.3V, f=100 to 120HZ VIN=5V, f=100 to 120HZ
A
Starting Current*2 Conditions VIN=3.3V VIN=3.3V VIN=5V
Control Voltage (Output ON)*3 VC, IH 2.0 2.0 2.0
V
Control Voltage (Output OFF) VC, IL 0.8 0.8 0.8
VC Control Current IC, IH 40 40 40
Terminal (Output ON) µA
Conditions VC=2V VC=2V VC=2V
Control Current IC, IL –5 0 –5 0 –5 0
µA
(Output OFF) Conditions VC=0V VC=0V VC=0V

*2: IS1 is specified at the 5% drop point of output voltage VO on the condition that VIN=overcurrent protection starting current, IO = 10 mA).
*3: Output is OFF when output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
16 ICs
SI-3000KM Series
■Electrical Characteristics 2 (High Input Voltage type)

Ratings
Parameter Symbol SI-3010KM (Variable type) SI-3050KM SI-3090KM SI-3120KM Unit
Input Voltage VIN 2.4*1 *1 *1 *1 V
Output Voltage VO (VADJ) 0.98 1.00 1.02 4.90 5.00 5.10 8.82 9.00 9.18 11.76 12.00 12.24
V
(Reference voltage VADJ for SI-3010KM) Conditions VIN=7V, IO=10mA VIN=7V, IO=10mA VIN=11V, IO=10mA VIN=14V, IO=10mA
∆VOLINE 30 30 54 72
Line Regulation VIN=6 to 11V, mV
Conditions IO=10mA (VO=5V) VIN=6 to 11V, IO=10mA VIN=10 to 15V, IO=10mA VIN=13 to 18V, IO=10mA
∆VOLOAD 75 75 135 180

Load Regulation VIN=7V, mV
Conditions IO=0 to 1A (VO=5V) VIN=7V, IO=0 to 1A VIN=11V, IO=0 to 1A VIN=14V, IO=0 to 1A
VDIF 0.3 0.3 0.3 0.3

Conditions IO=0.5A (VO=5V) IO=0.5A IO=0.5A IO=0.5A
Dropout Voltage V
0.6 0.6 0.6 0.6
Conditions IO=1A (VO=5V) IO=1A IO=1A IO=1A
Iq 600 600 600 600
Quiescent Circuit Current V IN=7V, IO=0A, VC=2V VIN=7V, IO=0A, VIN=11V, IO=0A, VIN=14V, IO=0A, µA
Conditions R2=10kΩ VC=2V VC=2V VC=2V
Iq (OFF) 1 1 1 1
Conditions VIN=7V, VC=0V VIN=7V, VC=0V VIN=11V, VC=0V VIN=14V, VC=0V
Temperature Coefficient of ∆VO/∆Ta ±0.5 ±0.5 ±1.0 ±1.5
mV/ °C
Output Voltage Conditions Tj =0 to 100°C (VO=5V) Tj=0 to 100°C Tj=0 to 100°C Tj=0 to 100°C
RREJ 75 75 68 66
Ripple Rejection VIN=7V, VIN=7V, VIN=11V, VIN=14V, dB
Conditions f=100 to 120Hz (VO=5V) f=100 to 120Hz f=100 to 120Hz f=100 to 120Hz
A
Starting Current*2 Conditions VIN=7V VIN=7V VIN=11V VIN=14V
Control Voltage (Output ON)*3 VC, IH 2.0 2.0 2.0 2.0
V
Control Voltage (Output OFF)*3 VC, IL 0.8 0.8 0.8 0.8
VC Control Current IC, IH 40 40 40 40
Terminal (Output ON) µA
Conditions VC=2V VC=2V VC=2V VC=2V
Control Current IC, IL –5 0 –5 0 –5 0 –5 0
µA
(Output OFF) Conditions VC=0V VC=0V VC=0V VC=0V
VOVP 33 26 30 33
Input Overvoltage Shutdown Voltage V
Conditions IO=10mA IO=10mA IO=10mA IO=10mA

*2: IS1 is specified at the 5% drop point of output voltage VO on the condition that VIN=overcurrent protection starting current, IO = 10 mA).
*3: Output is OFF when output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
*4: SI-3010KM, SI-3050KM and SI-3090KM, SI-3120KM cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during
start-up stage.
*5: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) × IO. Please calculate these values referring to the Copper Laminate Area vs. Power Dissipation data as shown
hereinafter.
■External Dimensions (TO252-5) (Unit : mm)
6.60±0.20
±0.20
±0.20 5.34
2.30
6.60±0.20 (5.04)
5.34±0.20 0.50±0.10
(1.50)
1.10±0.20
5
.32
Pin Assignment
R0
(4.06)
6.10±0.20
q VC
9.90±0.30
9.90±0.30
SEATING PLANE
0.00 to 0.127 w VIN
e GND
r VO
1.18±0.20
t Sense
±0.20
±0.20
(ADJ for SI-3010KM/SI-3120KM)

(0.89)
2.70
2.70
0.1
° Plastic Mold Package Type

0to 8
0.50±0.10
0.50±0.10 Flammability: UL94V-0
(1.00)
1.27 TYP 1.27 TYP Product Mass: Approx. 0.33g
2.30±0.20
1 2 3 4 5
ICs 17
■Block Diagram
●SI-3010KM/SI-3012KM ●SI-3025KM/SI-3033KM/SI-3050KM/SI-3090KM/SI-3120KM
VIN 2 4 VOUT VIN 2 4 VO
5
TSD TSD
- -
+ +
REF REF
3 GND 3 GND
●SI-3025KM/SI-3033KM/SI-3050KM/ ●SI-3010KM/SI-3012KM
SI-3090KM/SI-3120KM
D1*2 D1*2
*1 *1
VIN VO VIN VO
2 4 2 4 R1
+ + + +
sense
Load
Load
VC GND 5 VC GND ADJ
CIN CIN
1 CO 1 5 CO
3 3
*3 R2
R3
CIN: Input capacitor (22 µF or larger) R1, R2: Output voltage setting resistors
CO: Output capacitor Output voltage can be set by connecting R1 and R2 as shown
above.
*1: SI-3012KM/3025KM/3033KM (22 µF or larger)
R2: 10 kΩ is recommended (24 kΩ for SI-3012KM).
It comes with a circuit configuration that uses a low ESR capacitor for the output
capacitor. R1=(VO–VADJ)÷(VADJ/R2)
If an electrolytic capacitor is used, oscillation may occur at a low temperature.
SI-3010KM/3050KM/3090KM/3120KM (47 µF or larger)

If a low ESR capacitor is used, oscillation may occur.
*2: D1: Reverse bias protection diode *3: For SI-3010KM, insert R3 in case of setting VO to VO
This diode is required for protection against reverse biasing between the input ≤ 1.5V.
and output. Recommended value for R3 is 10kΩ.
(Sanken SJPL-H2 is recommended.)
This diode is not required at VO ≤ 3.3 V.
■Reference Data
Copper Laminate Area-Thermal Resistance Copper Laminate Area-Power Dissipation
• Obtaining the junction temperature
Glass-epoxy board : 30×30mm Glass-epoxy board : 30×30mm Measure the temperature TC at the lead part
100 1.5 of the GND pin with a thermocouple, etc.
90 Ta=25°C Then, substitute this value in the following

formula to obtain the junction temperature.
θ j-a(°C/W)
80 1 40°C
70 Tj=PD × θ j–C + TC ( θ j–C = 6°C/W)

60°C
60 0.5 Case temperature Tc
measurement point
50 85°C
40 0
10 100 1000 10 100 1000
Copper Laminate Area (mm2) Copper Laminate Area (mm2)
18 ICs
ICs 19
SI-3000KD Series Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs

• Compact surface-mount package (TO263-5) Ratings
SI-3012KD/3033KD SI-3010KD/3050KD
• Output current: 1.0A
DC Input Voltage VIN 17 35*1 V
• Low dropout voltage: VDIF ≤ 0.6V (at IO = 1.0A) DC Output Current IO 1.0 A
• Low circuit current consumption: Iq ≤ 350 µA Power Dissipation PD*2 3 W
(600 µA for SI-3010KD, SI-3050KD) Junction Temperature Tj –30 to +125 °C
• Low circuit current at output OFF: Iq (OFF) ≤ 1 µA
Thermal Resistance (Junction to Ambient Air) θ j-a 33.3 °C/W
• Built-in overcurrent, thermal protection circuits Thermal Resistance (Junction to Case) θ j-c 3 °C/W
• Compatible with low ESR capacitors (SI-3012KD *1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage
and SI-3033KD) of the electrical characteristics.
*2: When mounted on glass-epoxy board of 1600mm2 (copper laminate area 100%).
■Applications
• Secondary stabilized power supply (local power supply)
■Electrical Characteristics 1 (Low Input Voltage type compatible with low ESR output capacitor) (Ta=25°C, VC=2V unless otherwise specified)
Ratings
Parameter Symbol SI-3012KD (Variable type) SI-3033KD Unit
min. typ. max. min. typ. max.
Input Voltage VIN 2.4*3 *4 *3 *4 V
Output Voltage VO (VADJ) 1.24 1.28 1.32 3.234 3.300 3.366
V
(Reference Voltage for SI-3012KD) Conditions VIN=3.3V, IO=10mA VIN=5V, IO=10mA
∆VOLINE 15 15
Line Regulation mV
Conditions VIN=3.3 to 8V, IO=10mA (VO=2.5V) VIN=5 to 10V, IO=10mA
∆VOLOAD 40 50
Load Regulation mV
Conditions VIN=3.3V, IO=0 to 1A (VO=2.5V) VIN=5V, IO=0 to 1A
VDIF 0.4 0.4
Conditions IO=0.5A (VO=2.5V) IO=0.5A
Dropout Voltage V
0.6 0.6
Conditions IO=1A (VO=2.5V) IO=1A
Iq 350 350
Conditions VIN=3.3V, IO=0A, VC=2V, R2=2.4kΩ VIN=5V, IO=0A,VC=2V
Iq (OFF) 1 1
Conditions VIN=3.3V, VC=0V VIN=5V, VC=0V
Temperature Coefficient of ∆VO/∆Ta ±0.3 ±0.3
mV/°C
Output Voltage Conditions Tj=0 to 100°C (VO=2.5V) Tj=0 to 100°C
RREJ 55 55
Ripple Rejection dB
Conditions VIN=3.3V, f=100 to 120HZ, IO=0.1A (VO=2.5V) VIN=5V, f=100 to 120HZ, IO=0.1A
Overcurrent Protection Starting IS1 1.1 1.1
A
Current*1 Conditions VIN=3.3V VIN=5V
Control Voltage (Output ON)*2 VC, IH 2 2
V
Control Voltage (Output OFF) VC, IL 0.8 0.8
VC IC, IH 40 40
Terminal Conditions VC=2V VC=2V
IC, IL –5 0 –5 0
Conditions VC=0V VC=0V
*1: IS1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter.
*4: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) × IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data.
20 ICs
SI-3000KD Series
■Electrical Characteristics 2 (High Input Voltage Type)

Ratings
Parameter Symbol SI-3010KD (Variable type) SI-3050KD Unit
Input Voltage VIN 2.4*1 27*5 *1 15*5 V
V
(Reference Voltage VADJ for SI-3010KD) Conditions VIN=7V, IO=10mA VIN=7V, IO=10mA
∆VOLINE 30 30
Line Regulation VIN=6 to 11V, mV
Conditions VIN=6 to 11V, IO=10mA
IO=10mA (VO=5V)
∆VOLOAD 75 75
Load Regulation VIN=7V, mV
Conditions VIN=7V, IO=0 to 1A
IO=0 to 1A (VO=5V)
VDIF 0.3 0.3
Conditions IO=0.5A (VO=5V) IO=0.5A
Dropout Voltage V
0.6 0.6
Conditions IO=1A (VO=5V) IO=1A
Iq 600 600
Quiescent Circuit Current VIN=7V, IO=0A, VC=2V VIN=7V, IO=0A, µA
Conditions
R2=10kΩ VC=2V
Iq (OFF) 1 1
Conditions VIN=7V, VC=0V VIN=7V, VC=0V
Temperature Coefficient of ∆VO/∆Ta ±0.5 ±0.5
mV/ °C
Output Voltage Conditions Tj=0 to 100°C (VO=5V) Tj=0 to 100°C
RREJ 75 75
Ripple Rejection VIN=7V, VIN=7V, dB
Conditions
f=100 to 120Hz, IO=0.1A (VO=5V) f=100 to 120Hz, IO=0.1A
Overcurrent Protection Starting Current*2 IS1 1.1 1.1
A
*4 Conditions VIN=7V VIN=7V
Control Voltage (Output ON)*3 VC, IH 2.0 2.0
V
Control Voltage (Output OFF)*3 VC, IL 0.8 0.8
VC IC, IH 40 40
Terminal Conditions VC=2V VC=2V
IC, IL –5 0 –5 0
Input Overvoltage Shutdown VOVP 33 26
V
Voltage Conditions IO=10mA IO=10mA

*2: Is1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter.
*4: SI-3010KD, SI-3050KD, cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage.
*5: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) ✕ IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data as shown
hereinafter.
■External Dimensions (TO263-5) (unit : mm)
Case temperature
±0.2
measurement point 10.0
(8.0)
±0.2
(0.40)
(15°) (4.4)
1.2
±0.2
4.5
(1.75)
+0.10
1.3 –0.05
3-R0.3
Pin Assignment
(4.6)
±0.2 (2×R0.45)
φ1.5 Dp: (3°)
q VC
(6.8)
±0.2
±0.2
w VIN
9.2
9.2±
±0.3
±0.3
e GND (Common to the rear side of product)

15.3
15.30
±0.15
0.10
(3°)
(3°) r VO
±0.1
±0.2
2.4 t Sense
2.0
(R0.3)
(ADJ for SI-3010KD/3012KD)
±0.2
±0.2
±0.3
(0.75)
4.9
4.9
2.54
±0.10
0.88 (R0.3) 0 to 6°
(0.5)
±0.1 ±0.1
0.8 0.8
(1.7
±0.25
) (1.7
±0.25
) (1.7
±0.25
) (1.7
±0.25
) Flammability: UL94V-0
1 2 3 4 5 Product Mass: Approx. 1.48g
±0.2
9.9
(3°) (3°)
2-R0.3
±0.02
10.0
ICs 21
■Block Diagram
●SI-3010KD/SI-3012KD ●SI-3033KD/SI-3050KD
VIN 2 4 VO VIN 2 4 Vo
5
TSD TSD
- -
+ +
REF REF
3 GND 3 GND
●SI-3033KD/SI-3050KD ●SI-3010KD/SI-3012KD
D1*2 D1*2
*1 *3 *1
R3
VIN VO VIN VO
2 4 2 4 R1
+ + + +
sense
VC GND 5 Load VC GND ADJ Load
CIN CIN
1 CO 1 5 CO
3 3
R2
CIN: Input capacitor (22 µF or larger) R1, R2: Output voltage setting resistors
CO: Output capacitor The output voltage can be set by connecting R1 and R2 as shown
above.
*1: SI-3012KD/3033KD (22 µF or larger)
The recommended value for R2 is 10Ω (24kΩ for SI-3012KD).
Co has to be a low ESR capacitor such as a ceramic capacitor.
When using the electrolytic capacitor, oscillation may occur at a low temperature. R1=(VO–VADJ)÷(VADJ/R2)
SI-3010KD/3050KD/ (47 µF or larger)
If a low ESR capacitor is used, oscillation may occur. *3: For SI-3010KD, insert R3 in case of setting VO to VO ≤ 1.5V.
The recommended value for R3 is 10kΩ.
*2: D1: Reverse bias protection diode
This diode is required for protection against reverse biasing between the input
and output.
(Sanken SJPL-H2 is recommended.)
This diode is not required at VO ≤ 3.3V.
■Reference Data
Copper Laminate Area (on Glass-Epoxy Board) vs.

Thermal Resistance (from Junction to Ambient Temperature) (Typical Value)
55
Junction to Ambient Temperature
Thermal Resistance θ j-a (°C/W)
50 • A higher heat radiation effect can be achieved by enlarging the copper laminate
When Using Glass-Epoxy Board of 40 × 40 mm
area connected to the inner frame to which a monolithic ICs is mounted.
45
• Obtaining the junction temperature
40
Measure the case temperature TC with a thermocouple, etc. Then, substitute
this value in the following formula to obtain the junction temperature.
35
Tj=PD × θ j–C + TC ( θ j–C = 3°C/W) PD= (VIN–VO)•IOUT
30
0 200 400 600 800 1000 1200 1400 1600 1800
22 ICs
ICs 23
SI-3000LLSL Series Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs

• Low input voltage (1.3V) and low output Parameter Symbol Ratings Unit
voltage (1.0V) DC Input Voltage VIN 10 V
• Compact surface-mount package (SOP8) DC Bias Voltage VB 10 V
Output Control Terminal Voltage VC VIN V
• Low dropout voltage: VDIF ≤ 0.3V (at IO = 1.5A) DC Output Current IO 1.5 A
• Built-in overcurrent, input-overvoltage and Power Dissipation PD*1 1.1 W
thermal protection circuits Junction Temperature Tj –30 to +125 °C
• Built-in ON/OFF function (OFF state circuit
current: 1µA max.)
Thermal Resistance (Junction to Lead (Pin 8)) θ (j-L) 36 °C/W
• Compatible with low ESR capacitors Thermal Resistance (Junction to Ambient Air) θ (j-a)*1 100 °C/W
*1: When mounted on glass-epoxy board of 40 × 40mm (copper laminate area 100%).
■Applications
• On-board local power supply
• For stabilization of the secondary-side output voltage of switching power supplies

Ratings
SI-3010LLSL
Input Voltage VIN 1.4 to 3.6*1 V
Bias Voltage VB 3.3 to 5.5 V
Output Current IO 0 to 1.5*1 A
Operating Ambient Temperature Top –20 to +85*1 °C
■Electrical Characteristics (Ta=25°C, V C=2V, VIN=1.8V, V B=3.3V, VO=1.5V unless otherwise specified)
Ratings
Parameter Symbol SI-3010LLSL Unit
min. typ. max.
VADJ 0.980 1.000 1.020
Reference Voltage V
Conditions IO=10mA
∆VOLINE 10
Line Regulation mV
Conditions VIN=1.7 to 2.5V, IO=10mA
∆VOLOAD 30
Load Regulation mV
Conditions VIN=1.8V, IO=0 to 1.5A
VDIF 0.3
Dropout Voltage V
Conditions IO=1.0A
Iq 500 800
Conditions IO=0A, R2=10kΩ
Iq (OFF) 1
Conditions VC=0V
Temperature Coefficient of ∆VO/∆Ta ±0.2
mV/ °C
Output Voltage Conditions Tj=0 to 100°C
Overcurrent Protection Starting IS1 1.6
A
Current*1 Conditions VIN=1.8V, VB=3.3V
Control Voltage (Output ON)*2 VC, IH 2 V
Control Voltage (Output OFF) VC, IL 0.8 V
VC IC, IH 50
Terminal Conditions VC=2.7V
IC, IL 10
Conditions VC=0.4V
*1: IS1 is specified at the 5% drop point of output voltage VO on the condition that VIN = overcurrent protection starting current, IO = 10 mA.
24 ICs
SI-3000LLSL Series
■External Dimensions (SOP8) (unit : mm)
5.1±0.4
Pin Assignment
1.27 0.15+0.1 q VO
0.4±0.1 –0.05
w ADJ
e VB
0.5±0.1
8 7 6 5
r VC
t GND
6.2±0.3
4.4±0.2
y GND
u VIN
i VIN
1 2 3 4
1.27
0°
o1
0.995max. Flammability: UL94V-0
0t

1.55±0.15
1.5±0.1
0.05±0.05
0.10
0.4±0.1 0.12 M
■Typical Connection Diagram/Block Diagram
CIN, CB: Input and bias capacitors (Approx. 0.1 to 10µF)

Required when the input line contains inductance or when the
VIN VOUT
7 1 wiring is long.
+
R1 CSS CO: Output capacitor (47µF or larger)
8
R1 SI-3010LLSL is designed to use a low ESR capacitor (such as
CIN a ceramic capacitor) for the output capacitor. The recom-
+
VB OCP(2)
3 REF Drive
ADJ CO
mended ESR value for an output capacitor is 500mΩ or less
+
2 (at room temperature).
TSD OCP -
+
ON/OFF - AMP1 R2 R1, R2: Output voltage setting resistors
CB 4 - 6 The output voltage can be set by connecting R1 and R2 as
VC +
5 shown at left.
Open:OFF GND
Low: OFF The recommended value for R2 is 10kΩ.
High: ON
R1= (VO–VADJ) / (VADJ/R2)
CSS:Soft start capacitor
The rising time of the output voltage can be set by connecting
CSS between VOUT and ADJ.
■Reference Data
Copper Laminate Area - Power Dissipation
1.2
Ta=25°C
1
0.8 Ta=50°C
Pd (W)
0.6
Ta=80°C
0.4
0.2
0
10 100 1000
ICs 25
SI-3000ZD Series Surface-Mount, Low Dropout Voltage Linear Regulator ICs

• Compact surface-mount package (TO263-5) Parameter Symbol Ratings Unit
• Output current: 3.0A DC Input Voltage VIN*1 10 V
Output Control Terminal Voltage VC 6 V
• Low dropout voltage: VDIF ≤ 0.6V (at IO = 3.0A) DC Output Current IO*1 3.0 A
• Low circuit current at output OFF: Iq (OFF) ≤ 1µA Power Dissipation PD*3 3 W
• Built-in overcurrent and thermal protection
circuits
Thermal Resistance (Junction to Ambient Air) θ j-a 33.3 °C/W
■Applications Thermal Resistance (Junction to Case) θ j-c 3 °C/W
• Secondary stabilized power supply (local

power supply)

Parameter Symbol Ratings Unit Remarks
Input Voltage VIN *2 to 6*1 V
Output Current IO 0 to 3 A
Operating Ambient Temperature Top (a) –20 to +85 °C
Operating Junction Temperature Top (j) –20 to +100 °C
Output Voltage Variable Range VOADJ 1.2 to 5 V Only for SI-3011ZD. Refer to the block diagram.
*2: Set the input voltage to 2.4V or higher when setting the output voltage to 2.0V or lower (SI-3011ZD).
*3: When mounted on glass-epoxy board of 40 × 40mm (copper laminate area 100%).

Ratings
Parameter Symbol SI-3011ZD (Variable type) SI-3033ZD Unit
V
(Reference Voltage VADJ for SI-3011ZD) Conditions VIN=VO+1V, IO=10mA VIN=5V, IO=10mA
∆VOLINE 10 10
Line Regulation mV
Conditions VIN=3.3 to 5V, IO=10mA (VO=2.5V) VIN=4.5 to 5.5V, IO=10mA
∆VOLOAD 40 40
Load Regulation mV
Conditions VIN=3.3V, IO=0 to 3A (VO=2.5V) VIN=5V, IO=0 to 3A
VDIF 0.6 0.6
Dropout Voltage V
Conditions IO=3A (VO=2.5V) IO=3A
Iq 1 1.5 1 1.5
Conditions VIN=VO+1V, IO=0A, VC=2V VIN=5V, IO=0A, VC=2V
Iq (OFF) 1 1
Conditions VIN=VO+1V, VC=0V VIN=5V, VC=0V
Temperature Coefficient ∆VO/∆Ta ±0.3 ±0.3
mV/ °C
of Output Voltage Conditions Tj=0 to 100°C Tj=0 to 100°C
RREJ 60 60
Ripple Rejection dB
Conditions VIN=VO+1V, f=100 to 120HZ, IO=0.1A VIN=5V, f=100 to 120HZ, IO=0.1A
Overcurrent Protection Starting Current*2 IS1 3.2 3.2
A
*4 Conditions VIN=VO+1V VIN=5V
Control Voltage (Output ON)*3 VC, IH 2 2
V
Control Voltage (Output OFF)*3 VC, IL 0.8 0.8
VC Control Current(Output ON) IC, IH 100 100
µA
Terminal Conditions VC=2.7V VC=2.7V
Control Current(Output OFF) IC, IL –5 0 –5 0
µA
*1: Set the input voltage to 2.4V or higher when setting the output voltage to 2.0V or lower.
*2: IS1 is specified at the –5% drop point of output voltage VO under the condition of Output Voltage parameter.
*4: These products cannot be used for the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage.
26 ICs
SI-3000ZD Series
Case temperature
±0.2
(8.0)
±0.2
(0.40)
(15°) (4.4)
1.2
±0.2
4.5
(1.75)
+0.10
1.3 –0.05
3-R0.3
(4.6)
±0.2 (2×R0.45)
φ1.5 Dp: (3°)
(6.8)
±0.2
±0.2
9.2
9.2±
±0.3
Pin Assignment
±0.3
15.3
±0.15
15.30
0.10
±0.1 (3°)
(3°) q VC
±0.2
2.4 w VIN
2.0
(R0.3)
e GND (Common to the rear side of product)
±0.2
±0.2
±0.3
(0.75)
4.9
4.9
2.54
±0.10
0.88 (R0.3) 0~6°
r VO
(0.5)
±0.25
0.8
±0.1
±0.25 ±0.25
0.8
±0.1
±0.25
t Sense
(1.7 ) (1.7 ) (1.7 ) (1.7 )
1 2 3 4 5
(ADJ for SI-3011ZD)
±0.2
9.9
(3°) (3°)
2-R0.3
±0.02
10.0
0.1 Product Mass: Approx. 1.48g
■Block Diagram
SI-3011ZD
VIN
2 4
VO CIN: Input capacitor (Approx. 10µF)
+ * CO: Output capacitor (47µF or larger)
R3
R1
CIN The output voltage may oscillate if a low ESR type capacitor
Drive +
5
+
(such as a ceramic capacitor) is used for the output capacitor in
REF -
ADJ
+
TSD OCP AMP1 CO the SI-3000ZD Series.
ON/ - R2
VC OFF
1 -
+
3
GND
SI-3033ZD
R1, R2: Output voltage setting resistors
VIN VO
2 4 The output voltage can be set by connecting R1 and R2 as shown
+
at left.
5
CIN SENSE The recommended value for R2 is 10kΩ or 11kΩ.
Drive + +
REF - R1= (VO–VADJ) / (VADJ/R2)
TSD CO
*: Insert R3 in case of setting VO to VO ≤ 1.8V. The recommended
+ OCP AMP1
ON/ -
VC
1
OFF
-
value for R3 is 10kΩ.
+
3
GND
■Reference Data
Copper Laminate Area (on Glass-Epoxy Board) vs.
Thermal Resistance (from Junction to Ambient Temperature) (Typical Value)
55
Junction to Ambient Temperature
50
• A higher heat radiation effect can be achieved by enlarging the copper laminate
When Using Glass-Epoxy Board of 40 × 40 mm area connected to the inner frame to which a monolithic IC is mounted.
45 • Obtaining the junction temperature
Measure GND terminal temperature TC with a thermocouple, etc. Then substitute
40 this value in the following formula to obtain the junction temperature.
Tj=PD×θ j–C+TC PD= (VIN–VO)•IOUT
35
30
0 200 400 600 800 1000 1200 1400 1600 1800
ICs 27
SI-3000KF Series Low Current Consumption, Low Dropout Voltage Linear Regulator ICs

• Compact full-mold package (equivalent to Ratings
Parameter Symbol Unit Remarks
TO220) SI-3010KF
DC Input Voltage VIN 35*1 V
Output Control Terminal Voltage Vc VIN V
• Low dropout voltage: VDIF ≤ 0.5V (at IO = 1.0A) DC Output Current Io 1.0 A
• High ripple rejection: 75dB PD1 16.6 W With infinite heatsink
Power Dissipation
PD2 1.72 W Without heatsink, stand-alone operation
• Low circuit current at output OFF: Iq (OFF) ≤
1µ A
• Built-in overcurrent and thermal protection Operating Ambient Temperature Top –40 to +100 °C
circuits Thermal Resistance (Junction to Case) θ j-c 6.0 °C/W
Thermal Resistance (Junction to Ambient Air) θ j-a 58 °C/W Without heatsink, stand-alone operation
■Applications *1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage
of the electrical characteristics.
• Secondary stabilized power supply (local
power supply)

Ratings
SI-3010KF
Input Voltage Range VIN 2.4*2 to 27*1 V
Output Current Range IO 0 to 1.0*1 A
Output Voltage Variable Range VOADJ 1.1 to 16 V
Operating Junction Temperature Tj –20 to +100 °C
*1: VIN (max) and IO (max) are restricted by the relationship PD (max) = (VIN - VO) × IO = 16.6W.
■Electrical Characteristics
Ratings
Parameter Symbol SI-3010KF Unit
min. typ. max.
VADJ 0.98 1.00 1.02
Reference Voltage VIN=7V, IO=0.01A, V
Conditions
VC=2V, VO=5A
∆VOLINE 30
Line Regulation VIN=6 to 15V, IO=0.01A, mV
Conditions
VC=2V, VO=5A
∆VOLOAD 75
Load Regulation VIN=7V, IO=0 to 1A, VC=2V, mV
Conditions
VO=5A
VDIF 0.3
Conditions IO=0.5A, VC=2V, VO=5V
Dropout Voltage V
0.5
Conditions IO=1.0A, VC=2V, VO=5V
Iq 600
Conditions VIN=7V, IO=0A, VC=2V
Iq (OFF) 1
Conditions VIN=7V, VC=0V
∆VO/∆Ta ±0.5
Temperature Coefficient of
VIN=7V, IO=0.01A, VC=2V, mV/ °C
Output Voltage Conditions
Tj=0 to 100°C, VO=2.5V
RREJ 75
Ripple Rejection VIN=7V, IO=0.1A, VC=2V, dB
Conditions
f=100 to 120Hz, VO=5V
A
Current*3 Conditions VIN=7V, VC=2V
VC, IH 2
Control Voltage (Output ON)*4 V
Conditions VIN=7V
VC, IL 0.8
Control Voltage (Output OFF) V
VC Conditions VIN=7V
Terminal IC, IH 40
IC, IL –5 0
Input Overvoltage Shutdown VOVP 33
V
Voltage Conditions IO=0.01A
*3: IS1 is specified at the 5% drop point of output voltage VO on the condition that VIN = overcurrent protection starting current, IO = 10 mA.
*5: SI-3000KFE cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage.
28 ICs
SI-3000KF Series
■Block Diagram ■Ta-PD Characteristics

SI-3010KF
20
Silicone Grease:
With Infinite Heatsink G746 (Shin-Etsu Chemical)
Heatsink: Aluminum
VIN 2 4 VOUT

15
200×200×2mm (2.3°C/W)
VC 1 5 ADJ
10 100×100×2mm (5.2°C/W)
TSD 75×75×2mm (7.6°C/W)
–
+ 3 GND 5
Without Heatsink
REF
0
–30 –20 0 20 40 60 80 100
Ambient Temperature Ta (°C)
●SI-3010KF
D1*1
VIN VO
2 4 R1
+ +
VC GND ADJ
CIN Load
1 5 CO
3
*2 R2
R3
CIN: Input capacitor (22µF or larger) R1, R2: Output voltage setting resistors
CO: Output capacitor (47µF or larger) The output voltage can be adjusted by connecting R1 and R2 as shown
If a low ESR capacitor (such as a ceramic capacitor) is used above.
for the output capacitor, oscillation may occur. The recommended value for R2 is 10kΩ.
R1=(VO–VADJ)÷(VADJ/R2)
*1. D1: Reverse bias protection diode
This diode is required for protection against reverse *2: Insert R3 in case of setting VO to VO ≤ 1.5V.
biasing between the input and output. The recommended value for R3 is 10kΩ.
(Sanken RU2Z is recommended.)
■External Dimensions (TO220F-5) (Unit : mm)
±0.2
4.2
±0.2
10.0 2.8±0.2
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
16.9±0.3
Pin Assignment
q Vc
(17.9)
w VIN
2.6±0.1
e GND
r Vout
(2.0)
0.95
±0.15 t ADJ
4.6±0.6
+0.2
(4.6)
0.85 –0.1
+0.2 Flammability: UL 94V-0
P1.7±0.7×4=6.8±0.7 0.45 –0.1
3.9±0.7 (4.3)
8.2±0.7
1 2 3 4 5
ICs 29
SI-3000ZF Series 5-Terminal, Low Dropout Voltage Linear Regulator ICs
■Features ■Absolute Maximum Ratings (Ta = 25°C)

• Compact full-mold package (equivalent to Parameter Symbol Ratings Unit
TO220) DC Input Voltage VIN*1 10 V
Output Control Terminal Voltage VC 6 V
DC Output Current IO*1 3.0 A
• Low dropout voltage: VDIF ≤ 0.7V (at IO = 3.0A) PD1 20 (With infinite heatsink) W
Power Dissipation
• Low circuit current at output OFF: Iq (OFF) ≤ 1µA PD2 1.5 (Without heatsink, stand-alone operation) W
• Built-in overcurrent and thermal protection circuits
■Applications Thermal Resistance (Junction to Case) θ j-c 5.0 °C/W
• Secondary stabilized power supply (local Thermal Resistance (Junction to Ambient Air) θ j-a 66.7 (Without heatsink, stand-alone operation) °C/W
power supply)

Parameter Symbol Ratings Unit
Input Voltage VIN *2 to 6*1 V
Output Current IO 0 to 3 A
Operating Ambient Temperature Top (a) –20 to +85 °C
Operating Junction Temperature Top (j) –20 to +100 °C
Output Voltage Variable Range VOADJ 1.2 to 5 V
*1: VIN (max) and IO (max) are restricted by the relationship PD = (VIN - VO) × IO.
■Electrical Characteristics (Ta = 25°C, VC = 2V unless otherwise specified)
Parameter Symbol SI-3011ZF Unit

min. typ. max.
VADJ 1.078 1.100 1.122
Reference Voltage V
Conditions VIN=VO+1V, IO=10mA
∆VOLINE 10
Line Regulation mV
Conditions VIN=3.3 to 5V, IO=10mA (VO=2.5V)
∆VOLOAD 40
Load Regulation mV
Conditions VIN=3.3V, IO=0 to 3A (VO=2.5V)
VDIF 0.7
Dropout Voltage V
Conditions IO=3A (VO=2.5V)
Iq 1 1.5
Conditions VIN=VO+1V, IO=0A, VC=2V
Iq (OFF) 1
Conditions VIN=VO+1V, VC=0V
Temperature Coefficient ∆VO/∆Ta ±0.3
mV/ °C
of Output Voltage Conditions Tj=0 to 100°C
RREJ 60
Ripple Rejection dB
Conditions VIN=VO+1V, f=100 to 120HZ, IO=0.1A
Overcurrent Protection Starting Current*2 IS1 3.2
A
*4 Conditions VIN=VO+1V
Control Voltage (Output ON)*3 VC, IH 2
V
Control Voltage (Output OFF)*3 VC, IL 0.8
VC Control Current(Output ON) IC, IH 100
µA
Terminal Conditions VC=2.7V
Control Current(Output OFF) IC, IL –5 0
µA
Conditions VC=0V
*2: IS1 is specified at the 5% drop point of output voltage VO under the Output Voltage parameter conditions.
*4: These products cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage.
30 ICs
SI-3000ZF Series
■External Dimensions (TO220F-5) (unit : mm)
±0.2
4.2
±0.2 ±0.2
10.0 2.8
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
Pin Assignment
16.9±0.3
q VC
w VIN
(17.9)
e GND
2.6±0.1 r Vo
t ADJ
(2.0)
±0.15
0.95
4.6±0.6
+0.2
(4.6)
0.85 –0.1
P1.7±0.7×4=6.8±0.7 0.45 –0.1
+0.2
3.9±0.7 (4.3)
8.2±0.7
1 2 3 4 5
■Typical Connection Diagram/Block Diagram
CIN: Input capacitor (Approx. 10µF)

SI-3011ZF
This capacitor is required when the input line contains induc-
VIN
tance or when the wiring is long.
VO
+
2 4
CO: Output capacitor (47µF or higher)
*
CIN
R3
R1 The output voltage may oscillate if a low ESR type capacitor
(such as a ceramic capacitor) is used for the output capacitor
Drive +
5
+
REF
TSD
-
ADJ CO
in SI-3000ZF.
+ OCP AMP1
ON/ - R2
VC OFF
1 - R1, R2: Output voltage setting resistors
+
3 The output voltage can be set by connecting R1 and R2 as
GND
shown at left.
The recommended value for R2 is 10kΩ or 11kΩ.
R1= (VO–VADJ) / (VADJ/R2)
*: Insert R3 in case of setting VO to VO ≤ 1.8V. The recom-

mended value for R3 is 10kΩ.
■Ta-PD Characteristics
25
With Silicone Grease
Heatsink: Aluminum
With Infinite Heatsink
20
15
200×200×2mm (2.3°C/W)
100×100×2mm (5.2°C/W)
10
75×75×2mm (7.6°C/W)
Without heatsink
0
–30 0 25 50 75 100
ICs 31
32 ICs
1-1-2 Switching Mode Regulator ICs
Application Note
■ Heat Dissipation and Reliability ■ Mounting Torque
The reliability of an IC is highly dependent on its operating temperature. SI-8000E
Please be sure to apply silicone grease to the IC and to mount it to the SI-8000JF
heatsink with a proper mounting torque. SI-8000S
Heatsink design should pay particular attention to ensuring sufficient heat SI-8000TFE 0.588 to 0.686[N•m] (6.0 to 7.0[kgf•cm])
dissipation capacity. SI-8000HFE
In addition, please take into account the air convection in operation. SI-8000FFE
The reliability of discrete components such as capacitors and coils is SI-8000Y
closely related to temperature. A high operating temperature may reduce
the service life. Exceeding the allowable temperature may burn the coils or
damage capacitors. It is important to make sure that the temperature of ■ Recommended Silicone Grease
output smoothing coils and input/output capacitors do not exceed their
allowable levels during operation. With an adequate derating for the coils,
minimize heat emission as far as possible. (For discrete components, refer
• Dow Corning Toray Silicone Co., Ltd.: SC102
to the individual user manuals.)
products may penetrate the device and result in an extremely short device
■ Internal Power Dissipation life.
PD can be obtained from the following formula.

• For the device with built-in flywheel diode: ■ Others
PD=VO•IO ( 100 –1) • Devices can not be operated in parallel connection aiming for a larger
ηχ current.
• Not applicable for the current boost or voltage step-up use.
• For the device with external flywheel diode:
PD=VO•IO ( 100 –1)–VF•IO(1– VO )

ηχ VIN ■ Rectifier Diodes for Power Supplies
Efficiency ηχ depends on the input/output conditions. Please refer to To rectify the AC input using rectifier diodes in power supplies, please use
the efficiency characteristics of the devices. (Posted on the Web site.) SANKEN rectifier diodes shown in the following list. (Please use a center-
tap or bridge configuration in using stand-alone type diodes.)
VO : Output voltage
Series Name Diodes
VIN: Input voltage SAI Series
IO : Output current SI-8000W Series
ηχ : Efficiency(%) SI-8000JD Series
SI-8000TM Series
VF : Diode forward voltage SJPM-H4 (Surface-Mount Stand-Alone Type,
SI-8000SD Series
VRM=400V,Io=2.0A)
SPI-8000A Series
SI-8005Q Series
■ Thermal Design SI-8001FDE Series
SI-8001FDL Series
The maximum junction temperature Tj(max) given in the Absolute Maximum SI-8008HD Series RBV-1506 (Bridge Type, VRM=600V,Io=15A)
SI-8000E Series
Ratings is specific to each product type and must be strictly observed.
SI-8000JF Series
Thus, thermal design must consider the maximum power dissipation AM01Z (Axial Type,VRM=200V,Io=1.0A)
SI-8000TFE Series
PD(max), which varies by the conditions of use, and the maximum ambient SI-8000GL Series
temperature Ta(max). SI-8000S Series RM10Z (Axial Type,VRM=200V,Io=1.5A)
SI-8100QL Series
To simplify thermal design, Ta-PD characteristic graphs are provided herein.
SI-8000FFE Series RM4Z (Axial Type,VRM=200V,Io=3.0A)
Please observe the following steps for heatsink design: SI-8000HFE Series
1. Obtain the maximum ambient temperature Ta(max). SI-8000Y Series RBV-1506 (Bridge Type, VRM=600V,Io=15A)
2. Obtain the maximum power dissipation PD(max). SI-8205NHD Series RM10Z (Axial Type,VRM=200V,Io=1.5A)
STA810M Series AM01Z (Axial Type,VRM=200V,Io=1.0A)
3. Look for the intersection point on the Ta-PD characteristic graph and
STA820M Series RM10Z (Axial Type,VRM=200V,Io=1.5A)
determine the size of the heatsink. SI-8400L Series
AM01Z (Axial Type,VRM=200V,Io=1.0A)
Although the heatsink size is now obtained, in actual applications, 10-to- SI-8500L Series
20% derating factor is generally introduced. Moreover, the heat dissipation
capacity of a heatsink highly depends on how it is mounted. Thus, it is
recommended to measure the heatsink and case temperature in the actual
operating environment.
Please refer to the Ta-PD characteristic graphs for respective product
types.
ICs 33
SAI Series Surface-Mount, Separate Excitation Step-down Switching Mode Regulator ICs
■Features ■Line up
• Surface-mount power package Part Number SAI01 SAI02 SAI03
• Output current: 0.4 to 0.5A VO(V) 5.0 3.3 12.0

IO(A) 0.5 0.4
• High efficiency: 75 to 88%
• Requires only 4 discrete components
• Internally-adjusted phase correction and
■Absolute Maximum Ratings
output voltage Parameter Symbol Ratings Unit
• Built-in reference oscillator (60kHz)
Power Dissipation PD 0.75 W
• Built-in overcurrent and thermal protection Junction Temperature Tj +125 °C
circuits Storage Temperature Tstg –40 to +125 °C
Thermal Resistance(junction to case) θ j-c 20 °C/W
■Applications
• Power supplies for telecommunication
equipment
• Onboard local power supplies

Ratings
SAI01 SAI02 SAI03
DC Input Voltage Range VIN 7 to 33 5.3 to 28 15 to 33 V
Output Current Range IO 0 to 0.5 0 to 0.4 A
Operating Junction Temperature Range Tjop –30 to +125 °C
■Electrical Characteristics (Ta=25°C)

Ratings
Parameter Symbol SAI01 SAI02 SAI03 Unit
VO 4.80 5.00 5.20 3.17 3.30 3.43 11.40 12.00 12.60
Output Voltage V
Conditions VIN=20V, IO=0.3A VIN=15V, IO=0.3A VIN=24V, IO=0.3A
η 80 75 88
Efficiency %
f 60 60 60
Oscillation Frequency kHZ
∆VOLINE 80 100 60 80 100 130
Line Regulation mV
Conditions VIN=10 to 30V, IO=0.3A VIN=8 to 28V, IO=0.3A VIN=18 to 30V, IO=0.3A
∆VOLOAD 30 40 20 30 70 95
Load Regulation mV
Conditions VIN=20V, IO=0.1 to 0.4A VIN=15V, IO=0.1 to 0.4A VIN=24V, IO=0.1 to 0.4A
Temperature Coefficient of Output Voltage ∆VO/∆Ta ±0.5 ±0.5 ±1.5 mV/°C
RREJ 45 45 45
Ripple Rejection dB
Conditions f=100 to 120HZ f=100 to 120HZ f=100 to 120HZ
Starting Current A
Conditions VIN=10V VIN=8V VIN=18V
34 ICs
SAI Series
■External Dimensions (PS4) (unit : mm)
2 SW
3VOS
±0.25
±0.2
max.
4
4.32
2.54
A Case Temperature Measuring Point
4.7
.GND 1VIN
±0.15
±0.2
+0.15
0.75 –0.05
1.4 Pin Assignment

0.89
max. ±0.2
6.8 3.6 q VIN
±0.5 4.0
max.
w SWOUT
A 8.0
±0.2 e VOS
6.3
+0.15
0.3 –0.05 r GND
0.25

0 to 0.15
3.0
±0.2 Product Mass: Approx. 0.22g
±0.3
1.0 ±0.3
9.8
■Block Diagram ■Typical Connection Diagram
VIN 1 2 SWOUT
3.3V 5V : 200µH
OCP 12V : 300µH
Reg. L1
1 2
VIN VIN SWOUT VO
OSC Reset TSD 3
Drive SAI VOS
Comp. + D1 +
C1 GND C2
100µF 4 SJPB-D4 330µF
3 VOS (Sanken)
Amp.
VREF GND GND
4
GND
100 VO
PD=VO•IO –1 –VF•IO 1–
0.8
• Glass epoxy ηχ VIN
0.7
board
(95×69×1.2) The efficiency depends on the input voltage and the output
• Natural air cooling
0.6 current. Therefore, obtain the value from the efficiency graph
0.5 and substitute the percentage in the formula above.
0.4
VO : Output voltage
0.3 IO : Output current
ηχ : Efficiency (%)
0.2
VF : Diode D1 forward voltage
0.1 SJPB-D4-0.3V
0
–30 0 25 50 75 100 125 Thermal design for D1 must be considered separately.
ICs 35
SI-8000W Series Surface-Mount, Separate Excitation Step-down Switching Mode Regulator ICs
■Features ■Absolute Maximum Ratings

• Surface-mount package (SOP8) Parameter Symbol Ratings Unit
• Output current: 0.6A DC Input Voltage VIN 35 V
Power Dissipation PD 1 W
• High efficiency: 75 to 80% Junction Temperature Tj –30 to +125 °C
• Requires only 4 discrete components Storage Temperature Tstg –40 to +125 °C
Thermal Resistance (Junction to 7-Pin Lead) θ j-L 22 °C/W
Thermal Resistance (Junction to Ambient Air)*1 θ j-a 100 °C/W
output voltage adjustment performed internally
*1: Glass-epoxy board of 40 × 40mm (copper laminate area 4.3%)
circuits
■Applications
• Power supplies for telecommunication equipment

Ratings
SI-8033W SI-8050W
DC Input Voltage Range VIN 5.3 to 28 7 to 33 V

Ratings
Parameter Symbol SI-8033W SI-8050W Unit
VO 3.17 3.30 3.43 4.80 5.00 5.20
Output Voltage V
Conditions VIN=15V, IO=0.3A VIN=20V, IO=0.3A
η 75 80
Efficiency %
f 60 60
∆VOLINE 60 80 80 100
Line Regulation mV
Conditions VIN=8 to 28V, IO=0.3A VIN=10 to 30V, IO=0.3A
∆VOLOAD 20 30 30 40
Load Regulation mV
Conditions VIN=15V, IO=0.1 to 0.4A VIN=20V, IO=0.1 to 0.4A
Temperature Coefficient of Output Voltage ∆VO/∆Ta ±0.5 ±0.5 mV/ °C
RREJ 45 45
Ripple Rejection dB
Conditions f=100 to 120HZ f=100 to 120HZ
Overcurrent Protection Starting IS1 0.61 0.61
A
Current Conditions VIN=15V VIN=20V
36 ICs
SI-8000W Series
5.1±0.4
1.27 0.15+0.1
0.4±0.1 –0.05
Pin Assignment
q VIN
0.5±0.1
8 7 6 5 w N.C
e SWOUT
4.4±0.2
6.2±0.3
r VOS
t GND
y GND
1 2 3 4
u GND
1.27 i GND
0°
o1
0.995max.
0t
1.55±0.15

1.5±0.1
0.05±0.05
0.10
0.4±0.1 0.12 M
VIN 1 3 SWOUT
L1
OCP 200µH
Reg. 1 3
VIN VIN SWOUT VO
4
OSC Reset TSD SI-8000W VOS
Drive D1
+ +
Comp. C1 GND C2
100µF 5 to 8 SJPB-D4 330µF
(Sanken)
4 VOS
Amp.
GND GND
VREF
5 to 8
GND
■Reference Data
Copper Laminate Area vs. Power Dissipation Copper Laminate Area vs. Thermal Resistance θ j-a
Tj=100°C Area of PC board : 40 × 40mm Area of PC board : 40 × 40mm

1.2 140
Ta=25°C
1 Ta=50°C
120
Ta=80°C
0.8
100
0.6
80
0.4
60
0.2
40
0 10 100 1000
10 100 1000
Copper Laminate Area (mm2) Copper Laminate Area (mm2)
(GND Terminal) (GND Terminal)
ICs 37
SI-8000JD Series Surface-Mount, Separate Excitation Step-down Switching Mode Regulator ICs
■Features ■Lineup
• Surface-mount package (TO263-5) Part Number SI-8033JD SI-8050JD SI-8090JD SI-8120JD
• Output current: 1.5A VO(V) 3.3 5.0 9.0 12.0
IO(A) 1.5
Parameter Symbol Ratings Unit Conditions
output voltage
• Capable of downsizing a choke-coil due to IC's Output Current IO 1.5 A
high switching frequency (125 kHz). (Com- When mounted on glass-epoxy board 40 × 40 mm (copper
Power Dissipation* PD 3 W
pared with conventional Sanken devices) area 100%)
Junction Temperature Tj +125 °C
• Built-in foldback-overcurrent and thermal
protection circuits
Thermal Resistance (Junction to Case) θ j-c 3 °C/W
• Output ON/OFF available (Circuit current at Thermal Resistance (Junction to When mounted on glass-epoxy board 40 × 40 mm (copper
θ j-a 33.3 °C/W
output OFF: 200µA max) Ambient Air) area 100%)
• Soft start available by ON/OFF pin Conditions *: Limited by thermal protection circuit
■Applications
• Onboard local power supplies, etc.

Ratings
Parameter Symbol Unit Conditions
SI-8033JD SI-8050JD SI-8090JD SI-8120JD
VIN1 5.3 to 40 7 to 40 11 to 40 14 to 40 IO=0 to 1A
DC Input Voltage Range V
VIN2 6.3 to 40 8 to 40 12 to 40 15 to 40 IO=0 to 1.5A
DC Output Current Range* IO 0 to 1.5 A VIN≥VO+3V
Operating Temperature Range* Top –30 to +125 °C
*: Limited by Ta–PD characteristics

Ratings
Parameter Symbol SI-8033JD SI-8050JD SI-8090JD SI-8120JD Unit
VO 3.234 3.30 3.366 4.90 5.00 5.10 8.82 9.00 9.18 11.76 12.00 12.24
Output Voltage V
Conditions VIN=15V, IO=0.5A VIN=20V, IO=0.5A VIN=21V, IO=0.5A VIN=24V, IO=0.5A
η 77 82 86 88
Efficiency %
f 125 125 125 125
∆VOLINE 25 80 40 100 50 120 60 130
Line Regulation mV
Conditions VIN=8 to 30V, IO=0.5A VIN=10 to 30V, IO=0.5A VIN=15 to 30V, IO=0.5A VIN=18 to 30V, IO=0.5A
∆VOLOAD 10 30 10 40 10 40 10 40
Load Regulation mV
Conditions VIN=15V, IO=0.2 to 0.8A VIN=20V, IO=0.2 to 0.8A VIN=21V, IO=0.2 to 0.8A VIN=24V, IO=0.2 to 0.8A
Temperature Coefficient of Output Voltage ∆VO/∆Ta ±0.5 ±0.5 ±1.0 ±1.0 mV/ °C
Starting Current A
Conditions VIN=15V VIN=20V VIN=21V VIN=24V
Low Level Voltage VSSL 0.5 0.5 0.5 0.5 V
ON/OFF* Outflow Current ISSL 100 100 100 100
Pin at Low Voltage µA
Conditions VSSL=0V
Iq 7 7 7 7
mA
Conditions VIN=15V, Io=0A VIN=20V, Io=0A VIN=21V, Io=0A VIN=24V, Io=0A
Quiescent Circuit Current
Iq(oFF) 200 200 200 200
µA
Conditions VIN=15V, VON/OFF=0.3V VIN=20V, VON/OFF=0.3V VIN=21V, VON/OFF=0.3V VIN=24V, VON/OFF=0.3V
*: Pin 5 is the ON/OFF pin. Soft start at power on can be performed with a capacitor connected to
this pin.
The output can also be turned ON/OFF with this pin. SI-8000JD SI-8000JD SI-8000JD
The output is stopped by setting the voltage of this pin to VSSL or lower.
ON/OFF-pin voltage can be changed with an open-collector drive circuit of a transistor.
When using both the soft-start and ON/OFF functions together, the discharge current from C3 5 ON/OFF 5 ON/OFF 5 ON/OFF
flows into the ON/OFF control transistor. Therefore, limit the current securely to protect the
C3 C3
transistor if C3 capacitance is large.
The ON/OFF pin is pulled up to the power supply in the IC, so applying the external voltage is
prohibited.
VOUT. ON/OFF Soft Start Soft Start

+VOUT. ON/OFF
38 ICs
SI-8000JD Series

Case temperature
±0.2
(8.0)
±0.2
(0.40)
(15°) (4.4)
1.2
±0.2
4.5
(1.75)
1.3 +0.10
–0.05
3-R0.3
(4.6)
±0.2 (2×R0.45)
φ1.5 Dp: (3°)
(6.8)
±0.2
±0.2
Pin Assignment
9.2
9.2±
±0.3
±0.3
q VIN
15.3
15.30
±0.15
0.10
(3°)
(3°) w SWOUT
±0.1
±0.2
2.4
e GND
2.0
(R0.3)
±0.2
±0.2
±0.3
r VOS
(0.75)
4.9
4.9
2.54
±0.10
0.88 (R0.3)
0 to 6°
(0.5) t ON/OFF
±0.1 ±0.1
0.8 0.8
±0.25 ±0.25 ±0.25 ±0.25
(1.7 ) (1.7 ) (1.7 ) (1.7 )
1 2 3 4 5 Plastic Mold Package Type
±0.2
9.9
(3°) (3°) Flammability: 94V-0
2-R0.3
±0.02
10.0

L1
1 2
VIN VIN SWOUT VOUT
1 VIN SWOUT 4
2 VOS
SI-8000JD
PReg. OCP + +
5 ON/OFF C1 ON/OFF GND C2
5 3 Di
Latch &
ON/OFF Reset
Drive
Soft C3
Start OSC
GND GND
+
–
Comp.
TSD
4 C1 : 50V/220µF
Error Amp. +
C2 : 25V/470µF
–
C3 : 10V/0.47µF (Only when using soft-start function)
GND
VREF
L1 : 100µH
3 Di : SJPB-H6 (Sanken)
■Reference Data
Copper Laminate Area on Glass Epoxy Board vs.
Thermal Resistance (Junction to Ambient Air) (Typical Value) Output Current vs. Power Dissipation (Typical)
Thermal Resistance (junction to ambient air)
55 2.6
2.4
2.2
Power Dissipation Pd (W)
50
With glass epoxy board of 40 × 40 mm 2.0
1.8
θ j-a (°C/W )
45
1.6
1.4
40 40V
1.2
30V
1.0 20V
35 0.8 VIN 8V
0.6
0.4
30
0 200 400 600 800 1000 1200 1400 1600 1800 0.2
Copper Laminate Area (mm2) 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Output Current IO (A)
3.5 Copper Area 100 VO
40×40 mm
( θ j-a : 33.3°C/W)
PD=VO·IO –1 –VF·IO 1–
3 20×40 mm
ηχ VIN
( θ j-a : 37°C/W)
2.5 20×20 mm The efficiency depends on the input voltage and the output current. Therefore, obtain the value
( θ j-a :44°C/W)
from the efficiency graph and substitute the percentage in the formula above.
10×10 mm
2 ( θ j-a : 53°C/W)
VO : Output Voltage
1.5
VIN : Input Voltage
1 IO : Output Current
0.5
VF : D1 forward voltage
0
–25 0 25 50 75 100 125 0.4V(IO=2A)(SJPB-H6)
Thermal design for D1 must be considered separately.
ICs 39
SI-8000TM Series Surface-Mount, Separate Excitation Step-down Switching Mode Regulator ICs

• Compact surface-mount package (TO252-5) Parameter Symbol Ratings Unit Conditions
• Output current: 1.5 A DC Input Voltage VIN 43 V
PD1 1.06 When mounted on glass-epoxy board (900 mm2 copper area 4.3%)
• High efficiency: 81% typ. (at Vo = 5 V) Power Dissipation W
PD2 1.65 When mounted on glass-epoxy board (900 mm2 copper area 50%)
• Requires only 4 discrete components Junction Temperature* Tj –30 to +150 °C
• Built-in reference oscillator (300 kHz)
• Built-in drooping-type-overcurrent and thermal Thermal Resistance (Junction to
θ j-a 95 °C/W When mounted on glass-epoxy board (900 mm2 copper area 4.3%)
protection circuits Ambient Air)
• Output ON/OFF available (circuit current at *: This product has built-in thermal protection circuits that may operate when the junction temperature rises above
output OFF: 200 µA typ.) 130°C.
The recommended design for the junction temperature during operation is below 125°C.
• Soft start available by ON/OFF pin
■Applications
• AV equipment
• OA equipment

Ratings
SI-8008TM
Input Voltage Range VIN VO+3*1 to 40 V
Output Voltage VO 0.8 to 24 V
Operating Temperature Range Top –20 to +125 °C
*1: The minimum value of an input voltage range is the higher of 4.5 V or VO + 3 V.
Rating
Parameter Symbol SI-8008TM Unit
min. typ. max.
VADJ 0.784 0.800 0.816
Reference Voltage V
Conditions VIN=15V, Io=0.1A
Temperature Coefficient of ∆VADJ/∆T ±0.1
mV/°C
Reference Voltage Conditions VIN=15V, Io=0.1A, Tc=0 to 100°C
η 81
Efficiency %
fo 300
Oscillation Frequency kHz
∆VOLINE 60 80
Line Regulation mV
Conditions VIN=10 to 30V, Io=0.5A
∆VOLOAD 10 40
Load Regulation mV
Conditions VIN=15V, Io=0.2 to 1.5A
IS 1.6
Overcurrent Protection Starting Current A
Conditions VIN=15V
Low Level Voltage VSSL 0.5 V
ON/OFF Pin* Outflow Current ISSL 10 40
µA
at Low Voltage Conditions VSSL=0V
Iq 6
mA
Conditions VIN=15V, Io=0A
Iq (OFF) 200 400 µA
Conditions VIN=15V, VSS=0V
*: Pin 5 is the SS pin. Soft start at power on can be performed with a capacitor connected to this pin. The
output can also be turned ON/OFF with this pin.
The output is stopped by setting the voltage of this pin to VSSL or lower. SS-pin voltage can be changed SI-8000TM SI-8000TM SI-8000TM
with an open-collector drive circuit of a transistor. When using both the soft-start and ON/OFF functions
together, the discharge current from C3 flows into the ON/OFF control transistor. Therefore, limit the
current securely to protect the transistor if C3 capacitance is large. The SS pin is pulled up to the power 5 SS 5 SS 5 SS
supply in the IC, so applying the external voltage is prohibited. If the pin is not used, leave it open.
C3 C3
VO. ON/OFF Soft start Soft start

+VO. ON/OFF
40 ICs
SI-8000TM Series
6.60±0.20
5.34±0.20
±0.20 2.30±0.20
6.60 (5.04)
5.34±0.20 0.50 ±0.10
(1.50)
±0.20
1.10
5
Pin Assignment
.3 2
R0
(4.06)
6.10±0.20
q VIN
±0.30
w SW
±0.30
SEATING PLANE
9.90
0.00 to 0.127
9.90
e GND
r ADJ
t SS
1.18±0.20
2.70±0.20
2.70±0.20
(0.89)

0.1
°
0to 8
0.50±0.10
±0.10
0.50
(1.00)
1.27 TYP 1.27 TYP
2.30±0.20
1 2 3 4 5
L1
L47µH
1 2
VIN IN SW VO
SI-8008TM
1 VIN SW
2
SI-8000TM R1
PReg. Overcurrent ADJ 4 +
C2
+ R2
5 SS
Protection C1 SS GND 470µF
220µF 5 3 Di
Latch & IADJ
ON/OFF Reset
Drive
Soft Start C3
OSC
GND GND
+ ADJ
–
Thermal
Comp. Protection 4
Error Amp.
– C1 : 220µF
+
+
C2 : 470µF
Reference Voltage C3 : 1µF (Only when using soft-start function)
GND L1 : 47µF
3 Di : SJPB-H6 (Sanken)
ICs 41
SI-8000SD Series Surface Mount, Separate Excitation Step-down Switching Mode Regulator ICs
• Surface-mount package (TO263-5) Part Number SI-8033SD SI-8050SD
• Output current: 3.0A VO (V) 3.3 5.0
IO (A) 3
• High efficiency: 79% typ. (SI-8033SD), 84%
typ. (SI-8050SD)
• Requires only 4 discrete external components
DC Input Voltage VIN 43*1 V
output voltage
When mounted on glass-epoxy board 40 × 40 mm
Power Dissipation*2 PD 3 W
• Built-in reference oscillator (60kHz) (copper area: 100%)
circuits
• Output ON/OFF available Thermal Resistance When mounted on glass-epoxy board 40 × 40 mm
θ j-a 33.3 °C/W
(Junction to Ambient Air) (copper area: 100%)
• Soft start available by S.S pin
*1: 35V for SI-8033SD
*2: Limited by thermal protection circuit.
■Applications

Ratings
SI-8033SD SI-8050SD
DC Input Voltage Range VIN1 5.5 to 28 7 to 40 V
Output Current Range* IO 0 to 3.0 A
Operating Temperature Range* Top –30 to +125 °C
*: Limited by Ta-PD characteristics.

Ratings
Parameter Symbol SI-8033SD SI-8050SD Unit
VO 3.17 3.3 3.43 4.8 5.0 5.2
Output Voltage V
Conditions VIN=15V, IO=1A VIN=20V, IO=1A
η 79 84
Efficiency %
f 60 60
∆VOLINE 25 80 40 100
Line Regulation mV
Conditions VIN=8 to 28V, IO=1A VIN=10 to 30V, IO=1A
∆VOLOAD 10 30 10 40
Load Regulation mV
Conditions VIN=15V, IO=0.5 to 1.5A VIN=20V, IO=0.5 to 1.5A
Temperature Coefficient of Output Voltage ∆VO/∆Ta ±0.5 ±0.5 mV/°C
Overcurrent Protection IS1 3.1 3.1
Starting Current A
Conditions VIN=15V VIN=20V
Low-Level Voltage VSSL 0.2 0.2 V
Soft
Outflow Current at ISSL 20 30 40 20 30 40
Start Pin* Low Voltage µA
Conditions VSSL=0.2V
* Pin 5 is a soft start pin. Soft start at power on can be performed with a capacitor connected to
this pin.
The output can also be turned ON/OFF with this pin. SI-8000SD SI-8000SD SI-8000SD
The output is stopped by setting the voltage of this pin to VSSL or lower.
Soft-start pin voltage can be changed with an open-collector drive circuit of a transistor.
When using both the soft-start and ON/OFF functions together, the discharge current from C3 5 ON/OFF 5 ON/OFF 5 ON/OFF
flows into the ON/OFF control transistor. Therefore, limit the current securely to protect the
transistor if C3 capacitance is large. C3 C3
The ON/OFF pin is pulled up to the power supply in the IC, so applying the external voltage is
prohibited.
If this pin is not used, leave it open.
VOUT. ON/OFF Soft start Soft start
+VOUT. ON/OFF
42 ICs
SI-8000SD Series
Case temperature
±0.2
(8.0)
Pin Assignment
±0.2
(0.40)
(15°) (4.4) q VIN
1.2
±0.2
4.5
w SWOUT
(1.75)
1.3 +0.10
–0.05
3-R0.3
e GND
±0.2 (4.6) (2×R0.45)
φ1.5 Dp: (3°) r VOS
(6.8)
±0.2
±0.2
t S.S
9.2
9.2±
±0.3
±0.3
15.3
±0.15
15.30
0.10
(3°)
(3°) Plastic Mold Package Type
±0.1
±0.2
2.4
Flammability: 94V-0
2.0
(R0.3)
±0.2
±0.2
±0.3
(0.75)
4.9
4.9
2.54
±0.10
0.88 (R0.3)
0 to 6°
(0.5)
±0.1 ±0.1
0.8 0.8
±0.25 ±0.25 ±0.25 ±0.25
(1.7 ) (1.7 ) (1.7 ) (1.7 )
1 2 3 4 5
±0.2
9.9
(3°) (3°)
2-R0.3
±0.02
10.0
■Block Diagram ■Reference Data

Copper Laminate Area on Glass Epoxy Board vs.
thermal resistance (junction to ambient air) (Typical Value)
1 VIN SWOUT 2
Thermal resistance (junction to ambient air)
Internal power Overcurrent 55

supply protection
50
Oscillator Reset Latch & driver With glass epoxy board of 40 × 40 mm
θ j-a (°C/W)
45
Thermal
Comparator protection
40
VOS 4
35
Error
amplifier
30
0 200 400 600 800 1000 1200 1400 1600 1800
Reference voltage
S.S GND
5 3
L1
VIN
1
VIN SWOUT
2
VOUT C1 : 50V/1000µF
4 C2 : 50V/1000µF
VOS
SI-8000SD C3 : 0.01µF
+ + (only when soft start function is used)
C1 S.S GND C2
5 3 D1 L1 : 150µH
D1 : SPB-G56 (Sanken)
C3
GND GND
Diode D1
• Be sure to use Schottky-barrier diode as D1.
If other diodes like fast recovery diodes are used, ICs may be destroyed because of the reverse voltage generated by the recovery voltage or ON
voltage.
Choke coil L1
• If the winding resistance of the choke coil is too high, the efficiency may drop below the rated value.
• As the overcurrent protection starting current is about 3.5 A, take care concerning heat radiation from the choke coil caused by magnetic saturation
due to overload or short-circuited load.
Capacitors C1, C2, and C3
• As large ripple currents flow through C1 and C2, use high-frequency and low-impedance capacitors aiming for switching-mode-power-supply use.
Especially when the impedance of C2 is high, the switching waveform may become abnormal at low temperatures.
For C2, do not use a capacitor with an extremely low equivalent series resistance (ESR) such as an OS capacitor or a tantalum capacitor, which may
cause an abnormal oscillation.
• C3 is a capacitor for soft start. Leave pin 5 open if the soft start function is not used.
This pin is pulled up with a pull-up resistor inside the ICs.
To create the optimum operating conditions, place the components as close as possible to each other.
ICs 43
SPI-8000A Series Surface Mount, Separate Excitation Step-down Switching Mode Regulator ICs

• Surface-mount 16 pin package Parameter Symbol Ratings Unit
• High efficiency: 91% (at VIN = 10V, lO = 1A, VO Power Dissipation PD*1, *2 2.4 W
= 5V) Junction Temperature Tj +125 °C
• Capable of downsizing a choke-coil due to IC's
high switching frequency (125kHz). (Com- Thermal Resistance (junction to case) θ j-c*2 18 °C/W
pared with conventional Sanken devices) Thermal Resistance (junction to ambient air) θ j-a*2 50 °C/W
• The output-voltage-variable type can vary its *1: Limited due to thermal protection.
output voltage from 1V to 14V because of its *2: When mounted on glass-epoxy board 700cm2 (copper laminate area 30.8cm2).
low reference voltage (Vref) of 1V.
• Wide Input Voltage Range (8 to 50V)
• Output ON/OFF available
circuits
■Applications
• OA equipment

Ratings
SPI-8010A
DC Input Voltage Range VIN (8 or Vo+3)*1 to 50 V
Output Voltage Range VO 1 to 14 V
Output Current Range IO 0.02 to 3.0*2 A
*1: The minimum value of an input voltage range is the higher of either 8V or VO+3V.
*2: Please be sure to let the output current run more than 20 mA. When using by less than 20 mA, there is a possibility that the output voltage becomes unstable.

Rating
Parameter Symbol SPI-8010A (Variable type) Unit
min. typ. max.
VREF 0.97 1.00 1.03
Reference Voltage V
Conditions VIN=12V, IO=1A
Eff 86
Efficiency %
Conditions VIN=20V, IO=1A, VO=5V
FOSC 250
∆VOLINE 20 40
Line Regulation mV
Conditions VIN=10 to 30V, IO=1A
∆VOLOAD 10 30
Load Regulation mV
Conditions VIN=12V, IO=0.1 to 1.5A
∆VREF/∆Ta ±0.5 mV/°C
Reference Voltage
Overcurrent Protection IS 3.1
Starting Current A
Conditions VIN=12V
Iq 7
Iq(off) 400
Conditions VIN=12V, VON/OFF=0.3V
CE/SS
Outflow Current at ISSL 50
Terminal µA
Low Voltage Conditions VSSL=0V
* Pin 4 is the CE/SS pin. Soft start at power on can be performed with a capacitor connected to
this pin. The output can also be turned ON/OFF with this pin. The output is stopped by setting
the voltage of this pin to VSSL or lower. CE/SS-pin voltage can be changed with an open- SPI-8000A SPI-8000A SPI-8000A
collector drive circuit of a transistor. When using both the soft-start and ON/OFF functions
together, the discharge current from C4 flows into the ON/OFF control transistor. Therefore,
4 CE/SS 4 CE/SS 4 CE/SS
limit the current securely to protect the transistor if C3 capacitance is large.
The CE/SS pin is pulled up to the power supply in the IC, so applying the external voltage is
C4 C4
prohibited.

+VO. ON/OFF
44 ICs
SPI-8000A Series
■External Dimensions (HSOP16) (Unit : mm)
1+0.1/-0.05
(Heatsink thickness)
10.5±0.2
16 9
2.0+0.2/-0.08
10.5±0.3
1 8
2.75MAX
2.5±0.2 0.25+0.15/-0.05
Pin Assignment
1.AGND
S 2.N.C
0.10 S
12.2±0.2 3.DGND
(Gate remains: Not included in dimensions) 4.CE/SS
5.Reg
(11) 6.N.C
7.SWOUT
8.N.C
1 8
9.N.C
(2)
10.N.C
11.VIN
12.B.S
13.N.C
7.5±0.2
14.Comp
(4.5)
15.VREF
16.N.C
16 9
Product Mass : Approx 0.86g
1.27±0.25 0.4+0.15/-0.05
■Block Diagram
SPI-8010A
VIN
UVLO P.REG OCP

CE/SS
CE/SS
BS
Boot REG
TSD
DRIVE
Reg
OSC + PWM SWOUT
- LOGIC
VREF
Comp -
Amp
+
1V
GND
ICs 45
SPI-8010A
12
R1
B.S
L1
11 C3 C1: 220µF/63V
VIN VIN SWOUT V0
SPI-8010A 7 C2: 470µF/25V
4 C3: 0.1µF
CE/SS D1 R2
+ + C4: 1000pF
C1 C7 DGND VREF
Reg Comp AGND
15
C2 C8
C5: 0.1µF
5 14 1 3 R3 IREF C6: 0.047µF
C4 C5 C6
C7: 0.1µF
C8: 0.1µF
GND GND
R1: 47Ω
L1: 47µH
D1: SPB-G56S
(Sanken)
Diode D1
• Be sure to use a Schottky-barrier diode for D1. If other diodes like fast recovery diodes are used, ICs may be destroyed because of the reverse voltage
generated by the recovery voltage or ON voltage.
Choke coil L1
• As the overcurrent protection starting current is about 4.5A, take care concerning heat radiation from the choke coil caused by magnetic saturation due to
overload or short-circuited load.
Capacitors C1, C2
• As large ripple currents flow through C1 and C2, use high-frequency and low-impedance capacitors aiming for switching-mode-power-supply use. Especially
when the impedance of C2 is high, the switching waveform may become abnormal at low temperatures. For C2, do not use a capacitor with an extremely low
equivalent series resistance (ESR) such as an OS capacitor or a tantalum capacitor, which may cause an abnormal oscillation.
Resistors R2, R3
• R2 and R3 are the resistors to set the output voltage. Set their values so that IREF becomes approx. 2mA. Obtain R2 and R3 values by the following formula:
(VOUT–VREF) (VOUT–1) VREF 1 .=500(Ω)

R2= = (Ω), R3 = = .
IREF 2×10–3 IREF 2×10–3
3.00
100 VO
PD=VO • IO –1 –VF • IO 1–
ηχ VIN
2.50 θ j-a:41.7°C/W(30.8cm )
2
θ j-a:47.6°C/W(8.64cm2) Note 1: The efficiency depends on the input voltage and the output cur-
2.00
rent. Therefore, obtain the value from the efficiency graph and
θ j-a:62.5°C/W(0.84cm2) substitute the percentage in the formula above.
1.50 Note 2: Thermal design for D1 must be considered separately.
1.00 VO : Output voltage

VIN : Input voltage
0.50 IO : Output current
0 VF : Diode D1 forward voltage
–30 0 25 50 75 100 125
SPB-G56S···0.4V(IO=2A)
46 ICs
ICs 47
SI-8000Q Series Surface Mount, Current Mode Cntrol Step-down Switching Mode Regulator ICs

• Compact surface-mount package (HSOP8) Parameter Symbol Ratings Unit Conditions
• Introduction of current mode control method Input Voltage VIN 30 V
• Output current: 3.5 A Power Dissipation*1 PD 1.35 W When mounted on glass-epoxy board, 30×30 mm (copper laminate area: 25×25 mm)
Junction Temperature*2 Tj –30 to +150 °C
• High efficiency: 90% (Vo = 5 V)
Thermal Resistance(junction to case) θ j-c 40 °C/W
• Built-in drooping-type overcurrent and thermal Thermal Resistance(junction to ambient air) θ j-a 74 °C/W When mounted on glass-epoxy board, 30×30 mm (copper laminate area: 25×25 mm)
protection circuits *1: Limited by thermal protection circuit
• Built-in soft start circuit *2: Note that the detection temperature for thermal protection is about 140°C.
• Built-in on/off function (Active Hi)
• Low current consumption during off
■Applications
• DVD recorder, FPD-TV
• OA equipment

Ratings
SI-8005Q
DC Input Voltage Range VIN Vo+3*1 to 28 V
Output Voltage Range VO 0.5 to 24 V
*1: The minimum value of the input voltage range is 4.75 V or Vo +3 V, whichever is higher.
■Electrical Characteristics (R1=4.2kΩ, R2=0.8kΩ when Ta = 25°C and Vo=5V)

Rating
Parameter Symbol SI-8005Q Unit
min. typ. max.
VADJ 0.485 0.500 0.515
Reference Voltage V
∆VADJ/∆T 0.05
Temperature Coefficient of Reference Voltage mV/ °C
Conditions VIN=12V, Io=1A, Ta=–40 to +85°C
η 90
Efficiency %
fo 450 500 550
∆VOLINE 30 60
Line Regulation mV
Conditions VIN=8 to 28V, Io=1A
∆VOLOAD 30 60
Load Regulation mV
IS 3.6 6.0
Conditions VIN=12V
Iq 18
mA
Conditions VIN=12V, Io=0A, VEN=open
Iq(OFF) 20
µA
Conditions VIN=12V, Io=0A, VEN=0V
ISSL 5
SS Pin Outflow Current at Low Voltage µA
Conditions VIN=16V, VSSL=0V
Vc/EN 2.8
High Level Voltage V
Conditions VIN=12V
Vc/EL 2.2
EN Pin Low Level Voltage V
Conditions VIN=12V
IC/EH 5
Inflow Current at Low Low Voltage µA
Conditions VEN=0V
Error Amplifier Voltage Gain AEA 1000 V/V
Error Amplifier Transformer Conductance GEA 800 µA/V
Current Sense Amplifier Impedance 1/GCS 0.35 V/A
Maximum ON Duty DMAX 92 %
Minimum ON Time DMIN 100 nsec.
*: Pin 8 is the SS pin. Soft start at power on can be performed with a capacitor connected to this pin.
The SS pin is pulled up to the power supply in the IC, so applying the external voltage is prohibited.
SI-8008Q
8 SS
C8
Soft start
48 ICs
SI-8000Q Series
Pin Assignment
0.05±0.05
0.08±0.08
Pin 1 Mark 1BS
4.40
6.20
2IN
3SW
4GND
0.695 TYP Enlarged View of A
5FB
1.50
5.20
A 6COMP
0.15
7EN
1.27
0.4 8SS
0.40
(0.52)
(0.27)
0.30

2.20
2.70

2.90
0.30 (0.55)
■Block Diagram
2
IN
Current
OSC Sense
Amp
OCP Boot 1
5v_ldo REG BS
P.REG
VREF
0.5V
PWM Drive
7 ON LOGIC 3
EN OFF SW
OVP 5v_ldo
TSD
5
6 FB
COMP Amp
UVLO 0.5V
4 8
GND SS
C1:10µF/50V
(Murata:GRM55DB31H106KA87)
VIN C2:22µF/16V
(Murata:GRM32ER71A226KE20)
2 1 C4 C3:560pF
L1 VO
IN BS (Murata:GRM18 Type)
7 SW 3
EN C4:10nF
SI-8000Q R1
(murata: GRM18 Type)
8 VFB
C1 FB 5 C5:10nF
SS D1 C2
COMP GND
R2 (murata: GRM18 Type)
6 4
C5 C3 L1:10µH
IADJ
D1: SPB-G56S (Sanken)
C6 SJPB-L4 (Sanken)
OPEN R3
GND GND
R1:46kΩ (Vo=5V)
R2:5.1kΩ
R3:24kΩ
ICs 49
SI-8000FD Series Surface Mount, Separate Excitation Step-down Switching Mode Regulator ICs
• Output current: 3.5 A Part Number SI-8001FDE SI-8001FDL
• High efficiency: 83% (Vo = 5 V, VIN = 15 V, Io = 2 A) VO(V) Variable(0.8 to 24)
• Requires only 6 discrete components IO(A) 3.5
Package TO263-5
Function Soft start ON/OFF
• Built-in drooping-type overcurrent and thermal
protection circuits
• Built-in soft start circuit (Output ON/OFF ■Absolute Maximum Ratings
available) Ratings
- SI-8001FDE SI-8001FDE SI-8001FDL
• Built-in on/off function (active Low) Input Voltage VIN 43 V
ON/OFF Control Voltage Vc – VIN V
- SI-8001FDL
Power Dissipation*1 PD 3 W When mounted on glass-epoxy board measuring 40×40 mm (copper laminate area: 100%)
Junction Temperature*2 Tj +150 °C
- SI-8001FDL Storage Temperature Tstg –40 to +150 °C
Thermal Resistance (Junction to Case) θj-c 3*1 °C/W When mounted on glass-epoxy board measuring 40×40 mm (copper laminate area: 100%)
■Applications Thermal Resistance (Junction to Ambient Air) θj-a 33.3*1 °C/W When mounted on glass-epoxy board measuring 40×40 mm (copper laminate area: 100%)
*1 : Limited by thermal protection circuit
• OA equipment, such as printers *2 : This product has built-in thermal protection circuits that may activate when the junction temperature exceeds 130°C.
• Onboard local power supplies The recommended design for the junction temperature during IC operation is below 125°C.

Ratings
SI-8001FDE SI-8050FDL
Input Voltage Range VIN Vo+3*1 to 40 V
*1: The minimum value of the input voltage range is 4.5 V or Vo + 3 V, whichever is higher.
■Electrical Characteristics (R1=4.2kΩ, R2=0.8kΩ when Ta = 25°C and Vo=5V)

Ratings
Parameter Symbol SI–8001FDE SI–8001FDL Unit
VADJ 0.784 0.800 0.816 0.784 0.800 0.816
Reference Voltage V
Conditions VIN=15V, Io=0.2A VIN=15V, Io=0.2A
∆VADJ/∆T ±0.1 ±0.1
Conditions VIN=15V, Io=0.2A, Tc=0 to 100°C VIN=15V, Io=0.2A, Tc=0 to 100°C
η 83 83
Efficiency %
Conditions VIN=15V, Io=2A VIN=15V, Io=2A
fO 270 300 330 270 300 330
∆VOLINE 80 80
Line Regulation mV
Conditions VIN=10 to 30V, Io=2A VIN=10 to 30V, Io=2A
∆VOLOAD 50 50
Load Regulation mV
Conditions VIN=15V, Io=0.2 to 3.5A VIN=15V, Io=0.2 to 3.5A
IS 3.6 3.6
Low Level Voltage VSSL 0.5 – – – V
SS Pin*1 Outflow Cuurent ISSL 6 30 – – –
µA
at Low Voltage Conditions VIN=15V, VSS=0V – – –
ON/OFF Control Voltage (Output on) Vc, IH – – – 0.8 V
ON/OFF Control Voltage (Output off) Vc, IL – – – 2.0 V
ON/OFF Pin*2
Ic, IH – – – 6 100
ON/OFF Controll Current (Output on) µA
Conditions – Vc=2V
Iq 6 6
mA
Quiescent Circuit Current Conditions VIN=15V, Io=0A VIN=15V, Io=0A
Iq(OFF) 200 600 30 200
µA
Conditions VIN=15V, Vss=0V VIN=15V, Vc=2V
*1: Pin 5 is the SS pin. Soft start at power on can be performed with a capacitor connected to
this pin. The output can also be turned ON/OFF with this pin. The output is stopped by
setting the voltage of this pin to VSSL or lower. SS-pin voltage can be changed with an
SI-8001FDE SI-8001FDE SI-8001FDE
open-collector drive circuit of a transistor. When using both the soft-start and ON/OFF
functions together, the discharge current from C3 flows into the ON/OFF control transistor.
Therefore, limit the current securely to protect the transistor if C3 capacitance is large. The 5 SS 5 SS 5 SS
SS pin is pulled up (3.7 V typ.) to the power supply in the IC, so applying the external
voltage is prohibited. If this pin is not used, leave it open. C3 C3
*2: Output is OFF when the output control terminal VC is open. Each input level is equivalent to
LS-TTL. Therefore, the device can be driven directly by LS-TTLs.
VO.ON/OFF Soft start Soft start

+Vo. On/OFF
50 ICs
SI-8000FD Series
Case temperature
±0.2
(8.0)
±0.2
(0.40)
(15°) (4.4)
1.2
±0.2
4.5
(1.75)
+0.10
1.3 –0.05
(4.6) 3-R0.3
φ1.5 Dp:
±0.2 (3°) (2×R0.45) Pin Assignment
(6.8)
±0.2
1 IN
±0.2
9.2
9.2±
2 SW
±0.3
±0.3
15.3
15.30
±0.15
(3°)
0.10 3 GND (Common to the rear side of the
(3°)
product)
±0.1
±0.2
2.4
2.0
(R0.3) 4 VADJ
±0.2
±0.2
±0.3
5 SS or Vc
(0.75)
4.9
4.9
2.54
±0.10
0.88 (R0.3)
0 to 6°
(0.5)
±0.1 ±0.1
±0.25
0.8 0.8 Plastic Mold Package Type
±0.25 ±0.25 ±0.25
(1.7 ) (1.7 ) (1.7 ) (1.7 )
1 2 3 4 5
9.9
±0.2 Product Mass: Approx. 1.48g
(3°) (3°)
2-R0.3
±0.02
10.0
■Block Diagram
SI-8001FDE SI-8001FDL
1 IN SW 2 1 VIN SW
2
PReg. OCP PReg. OCP

5 SS 5 VC
Latch & Latch &
ON/OFF Reset Reset
Drive ON/OFF Drive
Soft
start OSC OSC
+ VADJ ADJ
– TSD TSD
Comp. 4 Comp. 4
Error Amp. – Error Amp.

+
+
VREF
VREF
GND GND
3 3
L1 L1
1 2 1 2
VIN IN SW VOUT VIN IN SW VOUT
SI-8000FDE R1 SI-8001FDL R1
ADJ 4 + ADJ 4 +
+ C2 + C2
SS GND R2 Vc GND R2
C1 C1
5 3 Di 5 3 Di
IADJ IADJ
C3
GND GND GND GND
C1 : 470µF C1 : 470µF
C2 : 680µF C2 : 680µF
C3 : 0.1µ (Only when using soft-start function) L1 : 47µH
L1 : 47µH Di : SPB-G56S (Sanken)
Di : SPB-G56S (Sanken)
ICs 51
SI-8000HD Series Surface-Mount, Separate Excitation Step-down Switching Mode Regulator ICs

• Surface-mount package (TO263-5) Parameter Symbol Ratings Unit Conditions
• Output current: 5.5 A Input Voltage VIN 43 V
• High efficiency: 83% (at TYP, Vo = 5 V) Power Dissipation*1 PD 3 W When mounted on glass-epoxy board measuring 40×40 mm (copper laminate area: 100%)
• Requires only 5 discrete components (SI-
8008HD)
Thermal Resistance (Junction to Case) θj-c 3 °C/W When mounted on glass-epoxy board measuring 40×40 mm (copper laminate area: 100%)
Thermal Resistance (Junction to Ambient Air) θj-a 33.3 °C/W When mounted on glass-epoxy board measuring 40×40 mm (copper laminate area: 100%)
• Built-in drooping-type overcurrent and thermal *1: Limited by thermal protection circuit
protection circuits *2: This product has built-in thermal protection circuits that may activate when the junction temperature exceeds 130°C. The
• Built-in soft start circuit (Output ON/OFF recommended design for the junction temperature during IC operation is below 125°C.
available)
■Applications
• OA equipment

Ratings
SI-8008HD
Output Current Range IO 0 to 5.5 A VIN ≥ Vo+3V
*1: The minimum value of the input voltage range is 4.5 V or Vo+3 V, whichever is higher.
■Electrical Characteristics (R1=4.2kΩ, R2=0.8kΩ when Ta=25°C and Vo=5V)

Ratings
Paramter Symbol SI-8008HD Unit
min. typ. max.
VADJ 0.784 0.800 0.816
Reference Voltage V
(∆VADJ/∆T) ±0.1
Temperature Coefficient of Reference Voltage mV/°C
Conditions VIN=15V, Io=1A, Tc=0 to 100°C
η 83
Efficiency %
fo 150
∆VOLINE 60 80
Line Regulation mV
∆VOLOAD 20 50
Load Regulation mV
IS 5.6 6.5 7.5
Conditions VIN=15V
SS Pin*1 ISSL 10 30
Outflow Current at Low Voltage µA
Conditions VSSL=0V
Iq 6
mA
Iq(OFF) 200 400
µA
*1: Pin 5 is the SS pin. Soft start at power on can be performed with a capacitor connected to
this pin. The output can also be turned ON/OFF with this pin.
The output is stopped by setting the voltage of this pin to VSSL or lower. SS-pin voltage
SI-8008HD SI-8008HD SI-8008HD
can be changed with an open-collector drive circuit of a transistor. When using both the
soft-start and ON/OFF functions together, the discharge current from C3 flows into the ON/
OFF control transistor. Therefore, limit the current securely to protect the transistor if C3
5 SS 5 SS 5 SS
capacitance is large. The SS pin is pulled up (3.7 V typ.) to the power supply in the IC, so
applying the external voltage is prohibited. If this pin is not used, leave it open. C3 C3

+Vo. On/OFF
52 ICs
SI-8000HD Series
Case temperature
±0.2
(8.0)
±0.2
(0.40)
(15°) (4.4)
1.2
±0.2
4.5 Pin Assignment
(1.75)
+0.10
1.3 –0.05
3-R0.3 1 IN
2 SWOUT
(4.6)
±0.2 (2×R0.45)
φ1.5 Dp: (3°)
(6.8)
±0.2
3 GND
±0.2
9.2
9.2±
4 ADJ
±0.3
±0.3
15.3
15.30
±0.15
0.10
(3°) 5 SS
(3°)
±0.1
±0.2
2.4
2.0
(R0.3)
±0.2
±0.2
±0.3
(0.75)
4.9
4.9
2.54
±0.10
0.88 (R0.3)
0 to 6° Flammability: UL 94V-0
(0.5)
±0.1 ±0.1
±0.25
0.8
±0.25 ±0.25
0.8
±0.25
(1.7 ) (1.7 ) (1.7 ) (1.7 )
1 2 3 4 5
±0.2
9.9
(3°) (3°)
2-R0.3
±0.02
10.0
■Block Diagram
SI-8008HD
1 IN SW 2
PReg. OCP
5 SS
Latch &
ON/OFF Reset
Drive
Soft
start OSC
+ ADJ
– TSD
Comp. 4
Error Amp. –
+
+
VREF
GND
3
■Typical Connection Diagram ■Reference Data
L1
The acceptable loss of the package is 3 W for the SI-8000HD
1 2
VIN IN SW VOUT
series, so some ranges are not available, depending on the
relation between the input voltage and output current.
SI-8008HD R1
ADJ 4 +
+
SS GND
R2 C2
(junction to ambient air temperature) θj-a (°C/W)
C1 C4 5 3 Di 55
When using glass-epoxy board measuring 40×40 mm
C3 50
Thermal Resistance
GND GND
45
40
C1 : 1500µF
C2 : 1000µF 35
C3 : 1µF (Only when using soft-start function)
C4 : 4.7µF (GMR32ER71H475KA88L (Murata Manufacturing) 30
0 200 400 600 800 1000 1200 1400 1600 1800
recommended) Copper Laminate Area (mm2)
L1 : 100µH
Di : FMB-G16L (Sanken)
ICs 53
SI-8000E Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs
• Compact full-mold package (equivalent to Part Number SI-8050E
TO220) VO(V) 5.0
IO(A) 0.6
• High efficiency: 80%
• Internally-adjusted phase correction and output ■Absolute Maximum Ratings
voltage Parameter Symbol Ratings Unit
• Built-in reference oscillator (60kHz) DC Input Voltage VIN 43 V
PD1 14(With infinite heatsink) W
• Built-in overcurrent and thermal protection Power Dissipation
PD2 1.5(Without heatsink, stand-alone operation) W
circuits
θ j-c °C/W
■Applications Thermal Resistance(junction to case) 7.0
Thermal Resistance(junction to ambient air) θ j-a 66.7 °C/W
• Power supplies for telecommunication
equipment

Ratings
SI-8050E
DC Input Voltage Range VIN 7 to 40 V

Ratings
Parameter SI-8050E Unit
Symbol
min. typ. max.
VO 4.80 5.00 5.20
Output Voltage V
Conditions VIN=20V, IO=0.3A
η 80
Efficiency %
f 60
∆VOLINE 80 100
Line Regulation mV
Conditions VIN=10 to 30V, IO=0.3A
∆VOLOAD 30 40
Load Regulation mV
Temperature Coefficient of Output Voltage ∆VO/∆Ta ±0.5 mV/°C
Current A
Conditions VIN=10V
54 ICs
SI-8000E Series
±0.2
4.2
±0.2 ±0.2
10.0 2.8
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
16.9±0.3
(17.9)
2.6±0.1
Pin Assignment
(2.0)
q VIN
±0.15
0.95 w SWOUT
+0.2 e GND
(4.6)
0.85 –0.1
r VOS
(8.0)
+0.2
0.45 –0.1 t N.C
P1.7±0.7×4=6.8±0.7 3.9±0.7 (4.3) Plastic Mold Package Type

8.2±0.7
1 2 3 4 5
Forming No. 1101
5V : 200µH
VIN 1 2 SWOUT
OCP L1
VIN 2 VO
Reg. 1
VIN SWOUT
OSC Reset TSD

Drive SI-8000E D1
+ +
Comp. C1 AK06
(Sanken) C2
100µF VOS
330µF
4 VOS 4
Amp. GND NC
3 5
VREF GND GND
3 5
GND N.C
15
Infinite heatsink 100 VO
With Silicone Grease PD=VO·IO –1 –VF·IO 1–
Heatsink: Aluminum ηχ VIN
The efficiency depends on the input voltage and the output cur-
20
10
0×
rent. Therefore, obtain the value from the efficiency graph and
20
10
0×
0× substitute the percentage in the formula above.

2m
1 00
×2
m
(2
mm
.3
(5 VO : Output voltage
°C
75
×7 .2°
/W
5 5× C/
VIN : Input voltage
)
2m W
m )
(7. IO : Output current
6°
C/
Without heatsink W) ηx : Efficiency (%)
VF : Diode D1 forward voltage
0
–30 0 25 50 75 100 125 0.4V(AK06)
Operating Ambient Temperature Ta (°C)
ICs 55
SI-8000JF Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs
• Compact full-mold package (equivalent to Part Number SI-8015JF SI-8033JF SI-8050JF SI-8120JF
TO220) VO (V)* 1.59 3.3 5.0 12.0
• Output current: 1.5A IO (A) 1.5
• High efficiency: 67 to 88% * VREF(V) for SI-8015JF
output voltage ■Absolute Maximum Ratings
• Capable of downsize a choke-coil due to IC's Parameter Symbol Ratings Unit
high switching frequency (125kHz). DC Input Voltage VIN 43 V
(Compared with conventional Sanken devices) PD1 16.6 (with infinite heatsink) W
Power Dissipation
• Built-in foldback-overcurrent and thermal PD2 1.5 (without heatsink, standalone operation) W
protection circuits Junction Temperature Tj +125 °C
• Output ON/OFF available (circuit current at Storage Temperature Tstg –40 to +125 °C
output OFF: 200µA max.) Thermal Resistance (Junction to Case) θ j-c 6.0 °C/W
• Soft start available by ON/OFF pin
■Applications

Ratings
SI-8015JF* SI-8033JF SI-8050JF SI-8120JF
VIN1 VO+2 to 40 5.3 to 40 7 to 40 14 to 40 V IO=0 to 1A
DC Input Voltage Range
VIN2 VO+3 to 40 6.3 to 40 8 to 40 15 to 40 V IO=0 to 1.5A
Output Current Range IO 0 to 1.5 A VIN≥VO+3V
* SI-8015JF is a variable output voltage type. The variable output voltage range is from 2.5 V to 24 V.

Ratings
Parameter Symbol SI-8015JF SI-8033JF SI-8050JF SI-8120JF Unit
VO*2 1.558 1.59 1.622 3.234 3.30 3.366 4.90 5.00 5.10 11.76 12.00 12.24
Output Voltage*1 V
η 67 77 82 88
Efficiency %
f 125 125 125 125
∆VOLINE 25 80 25 80 40 100 60 130
Line Regulation mV
Conditions VIN=8 to 30V, IO=0.5A VIN=8 to 30V, IO=1.0A VIN=10 to 30V, IO=1.0A VIN=18 to 30V, IO=1.0A
∆VOLOAD 10 30 10 30 10 40 10 40
Load Regulation mV
Conditions VIN=12V, IO=0.2 to 0.8A VIN=15V, IO=0.5 to 1.5A VIN=20V, IO=0.5 to 1.5A VIN=24V, IO=0.5 to 1.5A
Output Voltage*3 ∆VO/∆Ta*4 ±0.5 ±0.5 ±0.5 ±1.0 mV/ °C
A
Starting Current Conditions VIN=12V VIN=15V VIN=20V VIN=24V
Low Level Voltage VSSL 0.5 0.5 0.5 0.5 V
ON/OFF*5
Outflow Current ISSL 100 100 100 100
Terminal µA
at Low Voltage Conditions VSSL=0V VSSL=0V VSSL=0V VSSL=0V
Iq 7 7 7 7
mA
Quiescent Circuit Conditions VIN=12V, IO=0A VIN=15V, IO=0A VIN=20V, IO=0A VIN=24V, IO=0A
Current Iq(OFF) 200 200 200 200
µA
Conditions VIN=12V, VON/OFF=0.3V VIN=15V, VON/OFF=0.3V VIN=20V, VON/OFF=0.3V VIN=24V, VON/OFF=0.3V
*1: Reference voltage for SI-8015JF *3: Temperature Coefficient of Reference Voltage for SI-8015JF
*2: VREF for SI-8015JF *4: ∆VREF/∆Ta for SI-8015JF
*5: Pin 5 is the ON/OFF pin. Soft start at power on can be performed with a capacitor connected
to this pin.
SI-8000JF SI-8000JF SI-8000JF
The output can also be turned ON/OFF with this pin. The output is stopped by setting the
voltage of this pin to VSSL or lower. ON/OFF-pin voltage can be changed with an open-collec-
tor drive circuit of a transistor. When using both the soft-start and ON/OFF functions together, 5 ON/OFF 5 ON/OFF 5 ON/OFF
the discharge current from C3 flows into the ON/OFF control transistor. Therefore, limit the
current securely to protect the transistor if C3 capacitance is large. The ON/OFF pin is pulled C3 C3
up to the power supply in the IC, so applying the external voltage is prohibited. If this pin is not
used, leave it open.

+VOUT. ON/OFF
56 ICs
SI-8000JF Series
4.2±0.2
±0.2 ±0.2
10.0 2.8
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
16.9±0.3
(17.9)
Pin Assignment
2.6±0.1
q VIN
(2.0)
w SWOUT
0.95
±0.15
e GND
+0.2 r VOS
(4.6)
0.85 –0.1
t ON/OFF
(8.0)
+0.2
0.45 –0.1
P1.7±0.7×4=6.8±0.7 3.9±0.7 (4.3)
8.2±0.7
1 2 3 4 5
Forming No.1101
■Block Diagram
SI-8015JF 8033JF, 8050JF, 8120JF
1 VIN SW OUT 1 VIN SW OUT

2 2
PReg. OCP PReg. OCP

5 ON/OFF 5 ON/OFF
Latch& Latch&
ON/OFF Reset ON/OFF Reset
Drive Drive
Soft Soft
Start OSC Start OSC
+ VREF +
– TSD – TSD
Comp. 4 Comp. 4
Error Amp. + Error Amp. +

– –
VREF VREF
GND GND
3 3
SI-8015JF 8033JF, 8050JF, 8120JF

L1 L1
1 2 1 2
VIN VIN SW VOUT VIN VIN SW VOUT
4
C4 VS
SI-8015JF 4
R1 SI-8000JF
VREF
+ + + +
220µF ON/OFF GND R2 470µF C1 ON/OFF GND C2
5 3 5 3 Di
Di
REF
C3
GND GND GND GND
IREF
IREF shall be approx. 2mA.
C1 : 50V/220µF C1 : 50V/220µF
C2 : 25V/470µF C2 : 25V/470µF
C3 : 10V/0.47µF (Only when using soft-start function) C3 : 10V/0.47µF (Only when using soft-start function)
C4 : 6800pF L1 : 100µH
L1 : 100µH VREF × (R1+R2) Di : RK16 (Sanken)
VOUT=
Di : RK16 (Sanken) R2
ICs 57
SI-8000TFE Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs
• Compact full-mold package (equivalent to
Part Number SI-8008TFE SI-8050TFE
TO220) VO (V) Variable (0.8 to 24) 5
• Output current: 1.5 A IO (A) 1.5
• High efficiency: 81% typ. (at Vo = 5 V)
• Built-in reference oscillator (300 kHz) ■Absolute Maximum Ratings
• Built-in dropping-type-overcurrent and thermal Parameter Symbol Ratings Unit Conditions
protection circuits DC Input Voltage VIN 43 V
PD1-1 17.8 (with infinite heatsink) Limited by thermal protection, Tjmax=150°C
• Output ON/OFF available (circuit current at
PD1-2 14.2 (with infinite heatsink) Tjmax=125°C
output OFF: 200µA typ.) Power Dissipation W
PD2-1 2.15 (without heat sink, standalone operation) Limited by thermal protection, Tjmax=150°C
• Soft start available by ON/OFF pin PD2-2 1.72 (without heatsink, standalone operation) Tjmax=125°C
Junction Temperature* Tj –30 to +150 °C
■Applications Thermal Resistance (Junction to Case) θ j-c 7 °C/W
• AV equipment *: This product has built-in thermal protection circuits that may operate when the junction temperature rises above 130°C.
• OA equipment The recommended design for the junction temperature during operation is below 125°C.

Ratings
SI-8008TFE SI-8050TFE (Ta=25°C)
Input Voltage Range VIN Vo+3*1 to 40 8 to 40 V
Output Voltage Range VO 0.8 to 24 5.0 V

Ratings Ratings
Parameter Symbol SI-8008TFE SI-8050TFE Unit
Vo 4.90 5.00 5.10
Output Voltage
(VADJ) 0.784 0.800 0.816 V
(Reference Voltage)
∆Vo/∆T ±0.5
Temperature Coefficient of Output Voltage
(Temperature Coefficient of Reference Voltage) (∆VREF/∆T) ±0.1 mV/°C
Conditions VIN=15V, Io=0.1A, Tc=0 to 100°C VIN=15V, Io=0.1A, Tc=0 to 100°C
η 81 81
Efficiency %
fo 300 300
∆VOLINE 60 80 60 80
Line Regulation mV
Conditions VIN=10 to 30V, Io=0.5A VIN=10 to 30V, Io=0.5A
∆VOLOAD 10 40 10 40
Load Regulation mV
Conditions VIN=15V, Io=0.2 to 1.5A VIN=15V, Io=0.2 to 1.5A
Overcurrent Protection IS 1.6 1.6
A
Starting Current Conditions VIN=15V VIN=15V
Low Level Voltage VSSL 0.5 0.5 V
ON/OFF Pin* Outflow Current at ISSL 10 40 10 40
µA
Low Voltage Conditions VSSL=0V VSSL=0V
Iq 6 6
mA
Iq(OFF) 200 400 200 400
µA
Conditions VIN=15V, VSS=0V VIN=15V, VSS=0V
*: Pin 5 is the SS pin. Soft start at power on can be performed with a capacitor connected to this
pin. The output can also be turned ON/OFF with this pin. The output is stopped by setting the
voltage of this pin to VSSL or lower. SS-pin voltage can be changed with an open-collector SI-8000TFE SI-8000TFE SI-8000TFE
drive circuit of a transistor. When using both the soft-start and ON/OFF functions together, the
discharge current from C3 flows into the ON/OFF control transistor. Therefore, limit the cur-
rent securely to protect the transistor if C3 capacitance is large. The SS pin is pulled up to the 5 SS 5 SS 5 SS
power supply in the IC, so applying the external voltage is prohibited. If the pin is not used,
leave it open.
C3 C3

+VO.ON/OFF
58 ICs
SI-8000TFE Series
±0.2
4.2
±0.2 ±0.2
10.0 2.8
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
16.9±0.3
Pin Assignment
(17.9)
q VIN
2.6±0.1 w SW
e GND
(2.0)
r ADJ
±0.15
0.95
t SS
4.6±0.6
+0.2
(4.6)
0.85 –0.1
+0.2
P1.7±0.7×4=6.8±0.7 0.45 –0.1 Flammability: UL94V-0
3.9±0.7 (4.3)
8.2±0.7
1 2 3 4 5
L1
47µH
1 2
VIN IN SW VOUT
SI-8008TFE
1 VIN SW
2
SI-8000TFE R1
PReg. Overcurrent ADJ 4 +
C2
+ R2
5 SS Protection C1 SS GND 470µF
220µF 5 3 Di
Latch & IADJ
Reset
ON/OFF Drive
Soft Start C3
OSC
GND GND
–
Thermal ADJ
+
Protection 4
Comp.
Error Amp. –
C1 : 220µF
+
+
Reference C2 : 470µF
Voltage
GND C3 :1µF (Only when using soft-start function)
3
L1 : 47µH
Di : RK16 (Sanken)
ICs 59
SI-8000GL Series Compact, Separate Excitation Step-down Switching Mode Regulator ICs

• DIP 8 pin package Parameter Symbol Ratings Unit
• High efficiency: 86% (at VIN = 20V, lO = 1A, VO Power Dissipation PD*1 1 W
= 5V) Junction Temperature Tj +125 °C
• Capable of downsize a choke-coil due to IC's Storage Temperature Tstg –40 to +125 °C
high switching frequency (250kHz). (Com- Thermal Resistance (junction to case) θ j-c 28 °C/W
pared with conventional Sanken devices) Thermal Resistance (junction to ambient air) θ j-a 100 °C/W
• The output-voltage-variable type can vary its *1: Limited by thermal protection.
output voltage from 1V to 14V because of its
low reference voltage (Vref) of 1V.
• Wide Input Voltage Range (8 to 50V)
• Output ON/OFF available
• Built-in overcurrent protection and thermal
protection circuits
■Applications
• OA equipment

Ratings
SI-8010GL
DC Input Voltage Range VIN (8 or VO+3)*1 to 50 V
Output Voltage Range VO 1 to 14 V
Output Current Range IO 0.02 to 1.5*2 A
*1: The minimum value of an input voltage range is the higher of either 8V or VO+3V.
*2: Please be sure to let the output current run more than 20 mA. When using by less than 20 mA, there is a possibility that the output voltage becomes unstable.

Ratings
Parameter Symbol SI-8010GL (Variable type) Unit
min. typ. max.
VREF 0.97 1.00 1.03
Reference Voltage V
Eff 86
Efficiency %
Conditions VIN=20V, IO=1A, VO=5V
FOSC 250
∆VOLINE 20 40
Line Regulation mV
∆VOLOAD 10 30
Load Regulation mV
Temperature Coefficient
∆VREF/∆Ta ±0.5 mV/°C
of Reference Voltage
A
Starting Current Conditions VIN=12V
Iq 7
Iq(OFF) 400
Conditions VIN=12V, VON/OFF=0.3V
CE/SS*
Terminal Terminal Outflow ISSL 50
µA
Current at Low Voltage Conditions VSSL=0V
*: Pin 2 is the CE/SS pin. Soft start at power on can be performed with a capacitor
connected to this pin.The output can also be turned ON/OFF with this pin. The output is
stopped by setting the voltage of this pin to VSSL or lower. CE/SS-pin voltage can be SI-8000GL SI-8000GL SI-8000GL
changed with an open-collector drive circuit of a transistor.
When using both the soft-start and ON/OFF functions together, the discharge current
2 CE/SS 2 CE/SS 2 CE/SS
from C4 flows into the ON/OFF control transistor. Therefore, limit the current securely to
protect the transistor if C3 capacitance is large. The CE/SS pin is pulled up to the power C4 C4
supply in the IC, so applying the external voltage is prohibited.

+VO. ON/OFF
60 ICs
SI-8000GL Series
■External Dimensions (DIP8) (Unit: mm)
6.5±0.2
8 7 6 5
Pin Assignment
1. GND
1 2 3 4 2. CE/SS
9.4±0.3
3. Reg
3.4±0.1
7.6
4.2±0.3
1.0+0.3
-0.05
7.5±0.5 4. SWOUT
1.5+0.3
-0.05 5. VIN
6. B.S
7. Comp
8. VREF
0.25-0.
+0.1
05
3.3±0.2

0.5±0.1
0.25 M
2.54 0° to 15°
0.89 TYP
■Block Diagram ■Ta-PD Characteristics

SI-8010GL 2 100 VO
PD=VO • IO –1 –VF • IO 1–
1.8
ηχ VIN
VIN 1.6
1.4 Note 1: The efficiency depends on the input volt-

UVLO P.REG OCP
1.2
age and the output current. Therefore, ob-
CE/SS
CE/SS
Boot REG
BS θ j-a:100°C/W tain the value from the efficiency graph and
1
TSD
substitute the percentage in the formula
0.8
DRIVE
above.
0.6
Reg
Note 2: Thermal design for D1 must be considered
OSC + PWM 0.4
- LOGIC
SWOUT
separately.
0.2
0 VO : Output voltage
VREF –25 0 25 50 75 100 125
Comp -
Amp
+ Ambient Temperature Ta (°C)
VIN : Input voltage
1V IO : Output current
ηχ : Efficiency
GND VF : Diode D1 forward voltage
RK16···0.4V(IO=1A)

SI-8010GL
6
C1: 220µF/63V C8: 0.1µF
B.S
R1
C2: 470µF/25V R1: 47Ω
L1
5 C3 C3: 0.1µF L1: 47µH
VIN VIN SWOUT V0
SI-8010GL 4 C4: 1000pF D1: RK16
2
CE/SS D1 R2 C5: 0.1µF (Sanken)
+ +
C1 C7 Reg Comp GND VREF C2 C8 C6: 0.047µF
8
3 7 1 R3 IREF C7: 0.1µF
C4 C5 C6
GND GND (VOUT–VREF) (VOUT–1) VREF 1 .

R2= = (Ω), R3 = = = . 500(Ω)
IREF 2×10–3 IREF 2×10–3
Diode D1
• Be sure to use a Schottky-barrier diode as D1. If other diodes like fast recovery diodes are used, IC may be destroyed because of the reverse voltage generated
by the recovery voltage or ON voltage.
Choke coil L1
• As the overcurrent protection starting current is approx. 2.5 A, take care concerning heat radiation from the choke coil caused by magnetic saturation due to
Capacitor C1, C2
• As large ripple currents flow through C1 and C2, use high-frequency and low-impedance capacitors aiming for switching-mode-power-supply use. Especially
when the impedance of C2 is high, the switching waveform may become abnormal at low temperatures. For C2, do not use a capacitor with an extremely low
equivalent series resistance (ESR) such as an OS capacitor or a tantalum capacitor, which may cause an abnormal oscillation.
Resistors R2, R3
• R2 and R3 are the resistors to set the output voltage. Set their values so that IREF becomes approx. 2 mA. Obtain R2 and R3 values by the following formula above.
* To create the optimum operating conditions, place the components as close as possible to each other.
ICs 61
SI-8000S Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs
• Compact full-mold package (equivalent to Part Number SI-8033S SI-8050S SI-8090S SI-8120S SI-8150S
TO220) VO(V) 3.3 5.0 9.0 12.0 15.0
IO(A) 3.0
• Internally-adjusted phase correction and output
DC Input Voltage VIN 43* V
voltage
PD1 18(With infinite heatsink) W
• Built-in reference oscillator (60kHz) Power Dissipation
PD2 1.5(Without heatsink, stand-alone operation) W
• Built-in overcurrent and thermal protection Junction Temperature Tj +125 °C
circuits Storage Temperature Tstg –40 to +125 °C

SW Terminal Applied Reverse Voltage VSW –1 V
• Built-in soft start circuit (Output ON/OFF Thermal Resistance(junction to case) θ j-c 5.5 °C/W
available)
*35V for SI-8033S
■Applications
• Power supplies for telecommunication equip-
ment

Ratings
SI-8033S SI-8050S SI-8090S SI-8120S SI-8150S
DC Input Voltage Range VIN 5.5 to 28 7 to 40 12 to 40 15 to 40 18 to 40 V

Ratings
Parameter Symbol SI-8033S SI-8050S SI-8090S SI-8120S SI-8150S Unit
min. typ. max. min. typ. max. min. typ. max. min. typ. max. min. typ. max.
SI-8000S*1 3.17 3.30 3.43 4.80 5.00 5.20 8.55 9.00 9.45 11.50 12.00 12.50 14.25 15.00 15.75
VO
Output Voltage SI-8000SS 3.234 3.30 3.366 4.90 5.00 5.10 V
Conditions VIN=15V, IO=1.0A VIN=20V, IO=1.0A VIN=21V, IO=1.0A VIN=24V, IO=1.0A VIN=25V, IO=1.0A
η 79 84 88 90 91
Efficiency %
f 60 60 60 60 60
∆VOLINE 25 80 40 100 50 120 60 130 60 130
Line Regulation mV
Conditions VIN=8 to 28V, IO=1.0A VIN=10 to 30V, IO=1.0A VIN=15 to 30V, IO=1.0A VIN=18 to 30V, IO=1.0A VIN=21 to 30V, IO=1.0A
∆VOLOAD 10 30 10 40 10 40 10 40 10 40
Load Regulation mV
Conditions VIN=15V, IO=0.5 to 1.5A VIN=20V, IO=0.5 to 1.5A VIN=21V, IO=0.5 to 1.5A VIN=24V, IO=0.5 to 1.5A VIN=25V, IO=0.5 to 1.5A
∆VO/∆Ta ±0.5 ±0.5 ±1.0 ±1.0 ±1.0 mV/°C
Output Voltage
Overcurrent Protection IS1 3.1 3.1 3.1 3.1 3.1
Starting Current A
Conditions VIN=15V VIN=20V VIN=21V VIN=24V VIN=25V
*1: “S” may be printed to the right of the marking (except SI-8090S, SI-8120S, SI-8150S).
62 ICs
SI-8000S Series

±0.2
4.2
±0.2
10.0 2.8±0.2
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
16.9±0.3
(17.9)
Pin Assignment
2.6±0.1
q VIN
w SWOUT
(2.0)
0.95±0.15 e GND
+0.2
r VOS
(4.6)
0.85 –0.1
(8.0)
+0.2
0.45 –0.1
t S.S
P1.7±0.7×4=6.8±0.7 3.9±0.7 (4.3)
8.2±0.7 Plastic Mold Package Type
Forming No. 1101 Product Mass: Approx. 2.3g
1 2 3 4 5
■Block Diagram
VIN 1 2 SWOUT
Reg. OCP
OSC Reset
Drive
Comp. TSD
4 VOS
Amp.
VREF
5 S.S. 3 GND

L1
VIN 2 VO
1
VIN SWOUT
SI-8000S C1,2 : 1000µF

+ D1 +
C1 C2 L1 : 150µH
VOS
D1 : RK46(Sanken)
4
S.S GND
5 3
GND GND
100 VO
20 PD=VO•IO –1 –VF•IO 1–
Infinite heatsink
With Silicone Grease
ηχ VIN
Heatsink: Aluminum
The efficiency depends on the input voltage and the output current.
15
200×200×2mm Therefore, obtain the value from the efficiency graph and substi-
(2.3°C/W)
tute the percentage in the formula above.
100×100×2mm
10 (5.2°C/W)
VO : Output voltage
75×75×2mm VIN : Input voltage
(7.6°C/W) IO : Output current
5
ηx : Efficiency (%)
Without heatsink VF : Diode D1 forward voltage
0 0.5V(RK46)
–25 0 25 50 75 100 125
Operating Ambient Temperature Ta (°C)
ICs 63
SI-8100QL Series Current Mode Control Step-down Switching Mode Regulator ICs

• DIP8 package Parameter Symbol Ratings Unit Conditions
• Introduction of current mode control method Input Voltage VIN 30 V
• Output current: 3.5A Power Dissipation*1 PD 1.56 W When mounted on glass-epoxy board measuring 70×60 mm (copper laminate area: 1310 mm2)
Junction Temperature*2 Tj –30 to +150 °C
• High efficiency: 90% (Vo=5V)
• Built-in reference oscillator (350kHz) Thermal Resistance (Junction to Case) θj-c 25 °C/W
• Built-in drooping-type overcurrent and thermal Thermal Resistance (Junction to Ambient Air) θj-a 64 °C/W When mounted on glass-epoxy board measuring 70×60 mm (copper laminate area: 1310 mm2)
protection circuits *1: Limited by thermal protection circuit
• Built-in soft start circuit *2: Note that the detect temperature for thermal protection is about 140°C.
• Built-in on/off function (Active Hi)
• Low current consumption during off ■Recommended Operating Conditions
Ratings
■Applications SI-8105QL
Output Voltage Range Vo 0.5 to 24 V
• Onboard local power supplies Output Current Range Io 0 to 3.5 A
• OA equipment Operating Junction Temperature Range Tjop –30 to +125 °C
*1: The minimum value of the input voltage range is 4.75 V or Vo +3 V, whichever is higher.
■Electrical Characteristics (When Ta=25°C and Vo=5V)

Ratings
Parameter Symbol SI-8105QL Unit
min. typ. max.
VADJ 0.485 0.500 0.515
Reference Voltage V
(∆VADJ/∆T) 0.05
Conditions VIN=12V, Io=1A, Ta=–40 to +85°C
η 90
Efficiency %
fo 315 350 385
∆VoLINE 30 60
Line Regulation mV
∆VoLOAD 30 60
Load Regulation mV
Is 3.6 6.0
Conditions VIN=12V
Iq 18
mA
Conditions VIN=12V, Io=0A, VEN=open
Iq(OFF) 20
µA
Conditions VIN=12V, Io=0A, VEN=0V
ISSL 5
SS Pin Outflow Current at Low Voltage µA
Conditions VIN=12V, VSSL=0V
VC/EH 2.8
Conditions VIN=12V
VC/EL 2.2
EN Pin Low Level Voltage V
Conditions VIN=12V
IC/EH 5
Inflow Current at Low Voltage µA
Conditions VEN=0V
Current Sense Amplifier Impedance 1/GCS 0.35 V/A
Maximum ON Duty DMAX 92 %
Minimum ON Time DMIN 100 nsec.
*: Pin 8 is the SS pin. Soft start at power on can be performed with a capacitor connected to this pin.
The SS pin is pulled up to the power supply in the IC, so applying the external voltage is prohibited.
SI-8100QL
8 SS
C5
Soft start
64 ICs
SI-8100QL Series
■External Dimensions (DIP8) (Unit : mm)
8 7 6 5
6.5±0.2
Pin Assignment
1 BS
1 2 3 4
2 IN
9.4±0.3
4.2±0.3
7.5±0.5
3 SW
3.4±0.1
7.6
1.0+0.3
-0.05
4 GND
1.5+0.3
-0.05
5 FB
6 COMP
7 EN
8 SS
0.25-0.
+0.1
05 Plastic Mold Package Type
3.3±0.2
0.5±0.1
2.54 0.25 M
0° to 15°
0.89 TYP
■Block Diagram
2
IN
Current
OSC Sense
Amp
OCP Boot 1
5v_ldo REG BS
P.REG
VREF
0.5V
PWM Drive
7 ON LOGIC 3
EN OFF SW
OVP 5v_ldo
TSD
5
6 FB
COMP Amp
UVLO 0.5V
4 8
GND SS
C1:10µ F/50V
(Murata: GRM55DB31H106KA87)
VIN C2:22µ F/16V
(Murata: GRM32ER71A226KE20)
C4 C3:560pF
2 1 L1 VO
IN BS (Murata: GRM18 Type)
7 SW 3
EN C4:10nF
SI-8105QL R1 (Murata: GRM18 Type)
8 VFB C5:10nF
C1 FB 5
SS D1 C2
COMP GND (Murata: GRM18 Type)
R2
C5 6 L1:10µ H
C3 IADJ
D1:SPB-G56S (Sanken)
C6
R3
SJPB-L4 (Sanken)
GND OPEN GND
R1:46kΩ (When Vo = 5 V)
R2:5.1kΩ
R3:24kΩ
ICs 65
SI-8000FFE Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs
• Output current: 3.5 A Part Number SI-8001FFE
• High efficiency: 83% (Vo = 5 V, VIN = 15 V, Io = 2 A) Vo (V) Variable (0.8 to 24)

Io (A) 3.5
• Requires only 6 discrete components Package TO220F-5
• Built-in reference oscillator (300 kHz) Function Soft start
• Built-in drooping-type overcurrent and thermal

protection circuits ■Absolute Maximum Ratings
• Built-in soft start circuit (Output ON/OFF Ratings
available) SI-8001FFE
Input Voltage VIN 43 V
■Applications Power Dissipation PD1-1 22.7

W
Limited by thermal protection circuit, Tj=150°C
(With infinite heatsink) PD1-2 18.2 Tj=125°C
• DVD recorder, FPD-TV Power Dissipation PD2-1 2.15 Limited by thermal protection circuit, Tjmax=150°C
W
• OA equipment, such as printers (Without heatsink) PD2-2 1.72 Tj=125°C
Thermal Resistance (Junction to Case) θj-c 5.5 °C/W
Thermal Resistance (Junction to Ambient Air) θj-a 58 °C/W
*: This product has built-in thermal protection circuits that may activate when the junction temperature exceeds 130°C.
The recommended design for the junction temperature during IC operation is below 125°C.
Ratings
SI-8001FFE
*: The minimum value of the input voltage range is 4.5 V or Vo +3 V, whichever is higher.
■Electrical Characteristics (R1=4.2kΩ, R2=0.8kΩ when Ta=25°C and Vo=5V)

Ratings
Parameter Symbol SI-8001FFE Unit
min. typ. max.
VADJ 0.784 0.800 0.816
Reference Voltage V
∆VADJ/∆T ±0.1
Conditions VIN=15V, Io=0.2A, Tc=0 to 100°C
η 83
Efficiency %
fo 270 300 330
∆VOLINE 55 80
Line Regulation mV
∆VOLOAD 15 50
Load Regulation mV
IS 3.6
Conditions VIN=15V
SS Pin ISSL 6 30
Outflow Current at Low Voltage µA
Iq 6
mA
Iq(OFF) 200 600
µA
Conditions VIN=15V, Vss=0V
*: Pin 5 is the SS pin. Soft start at power on can be performed with a capacitor connected to
this pin. The output can also be turned ON/OFF with this pin.
The output is stopped by setting the voltage of this pin to VSSL or lower. SS-pin voltage can SI-8000FFE SI-8000FFE SI-8000FFE
be changed with an open-collector drive circuit of a transistor. When using both the soft-
start and ON/OFF functions together, the discharge current from C3 flows into the ON/OFF
control transistor. Therefore, limit the current securely to protect the transistor if C3 5 SS 5 SS 5 SS
capacitance is large. The SS pin is pulled up (3.7 V typ.) to the power supply in the IC, so
C3 C3
applying the external voltage is prohibited. If this pin is not used, leave it open.

+Vo. ON/OFF
66 ICs
SI-8000FFE Series
±0.2
4.2
±0.2 ±0.2
10.0 2.8
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
Pin Assignment
16.9±0.3
q IN
w SW
(17.9)
e GND
2.6±0.1 r ADJ
t SS
(2.0)
0.95
±0.15 Plastic Mold Package Type
4.6±0.6
+0.2
(4.6)
0.85 –0.1
+0.2
P1.7±0.7×4=6.8±0.7 0.45 –0.1
3.9±0.7 (4.3)
8.2±0.7
1 2 3 4 5
■Block Diagram
1 IN SW 2
PReg. OCP
5 SS
Latch &
ON/OFF Reset
Drive
Soft
start OSC
+ ADJ
– TSD
Comp. 4
Error Amp. –
+
+
VREF
GND
3
L1
1 2
VIN IN SW VOUT
SI-8001FFE R1
ADJ 4 +
+ C2
SS GND R2
C1
5 3 Di
IADJ
C3
GND GND
C1 :470µF
C2 :680µF
C3 :0.1µF(Only when using soft-start function)
L1 :47µH
D1 :RK46(Sanken)
ICs 67
SI-8000HFE Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs
• Compact full-mold package (equivalent to
Part Number SI-8008HFE SI-8050HFE
TO220) VO (V) Variable (0.8 to 15) 5
• Output current: 5.5 A IO (A) 5.5
• High efficiency: 83% typ. (at Vo = 5 V)
• Built-in reference oscillator (150 kHz) ■Absolute Maximum Ratings
• Built-in drooping-type-overcurrent and Parameter Symbol Ratings Unit Conditions
thermal protection circuits DC Input Voltage VIN 43 V
PD1-1 25 (with infinite heatsink) Limited by thermal protection, Tjmax=150°C
• Built-in soft start circuit (Output ON/OFF
PD1-2 20 (with infinite heatsink) Tjmax=125°C
available) Power Dissipation W
PD2-1 2.15 (without heat sink, standalone operation) Limited by thermal protection, Tjmax=150°C
PD2-2 1.72 (without heatsink, standalone operation) Tjmax=125°C
■Applications Junction Temperature* Tj +150 °C
• Onboard local power supplies Storage Temperature Tstg –40 to +150 °C
• OA equipment Thermal Resistance (Junction to Case) θ j-c 5 °C/W
*: This product has built-in thermal protection circuits that may operate when the junction temperature rises above 130°C.
The recommended design for the junction temperature during operation is below 125°C.

Ratings
SI-8008HFE SI-8050HFE (Ta=25°C)
Input Voltage Range VIN Vo+3*1 to 40 8 to 40 V
Output Voltage Range VO 0.8 to 24 5.0 V

Ratings Ratings
Parameter Symbol SI-8008HFE (at Vo = 5 V) SI-8050HFE Unit
Vo 4.90 5.00 5.10
Output Voltage
(VADJ) 0.784 0.800 0.816 V
(Reference Voltage)
∆Vo/∆T ±0.5
Temperature Coefficient of Output Voltage
(Temperature Coefficient of Reference Voltage) (∆VADJ/∆T) ±0.1 mV/°C
Conditions VIN=15V, Io=1A, Tc=0 to 100°C VIN=15V, Io=1A, Tc=0 to 100°C
η 83 83
Efficiency %
fo 150 150
∆VOLINE 60 80 60 80
Line Regulation mV
∆VOLOAD 20 50 20 50
Load Regulation mV
Conditions VIN=15V, Io=0.2 to 3A VIN=15V, Io=0.2 to 3A
Overcurrent Protection IS 5.6 5.6
A
Starting Current Conditions VIN=15V VIN=15V
Low Level Voltage VSSL 0.5 0.5 V
ON/OFF Pin* Outflow Current at ISSL 10 30 10 30
µA
Low Voltage Conditions VSSL=0V VSSL=0V
Iq 6 6
mA
Iq(OFF) 200 400 200 400
µA
Conditions VIN=15V, VSS=0V VIN=15V, VSS=0V
*: Pin 5 is the SS pin. Soft start at power on can be performed with a capacitor connected to this
pin. The output can also be turned ON/OFF with this pin. The output is stopped by setting the
voltage of this pin to VSSL or lower. SS-pin voltage can be changed with an open-collector SI-8000HFE SI-8000HFE SI-8000HFE
drive circuit of a transistor. When using both the soft-start and ON/OFF functions together, the
discharge current from C3 flows into the ON/OFF control transistor. Therefore, limit the cur-
rent securely to protect the transistor if C3 capacitance is large. The SS pin is pulled up to the 5 SS 5 SS 5 SS
power supply in the IC, so applying the external voltage is prohibited. If the pin is not used,
leave it open.
C3 C3

+VOUT. ON/OFF
68 ICs
SI-8000HFE Series
±0.2
4.2
10.0±0.2 2.8
±0.2
0.5
φ 3.2±0.2
4.0±0.2
7.9±0.2
16.9±0.3
(17.9)
Pin Assignment
2.6±0.1 q VIN
w SW
(2.0)
e GND
0.95±0.15 r ADJ (VOS for SI-8050HFE)
t SS
4.6±0.6
+0.2
(4.6)
0.85 –0.1
+0.2
P1.7±0.7×4=6.8±0.7 0.45 –0.1 Plastic Mold Package Type
±0.7
3.9 (4.3)
8.2±0.7 Product Mass: Approx. 2.3g
1 2 3 4 5
■Block Diagram
SI-8008HFE SI-8050HFE
1 IN SW 1 IN SW 2
2
PReg. Overcurrent PReg. Overcurrent

5 ON/OFF Protection 5 ON/OFF Protection
Latch & Latch &

Reset ON/OFF Reset
ON/OFF Drive Drive
Soft Start
Soft Start
OSC OSC
+ Thermal ADJ + Vos
– Thermal
– Protection 4 4
Comp. Comp. Protection
Error Amp. + Error Amp. –

+
+
– +
Reference Reference
Voltage Voltage
GND GND
3 3
VIN 1 IN SW L VOUT VIN 1 IN SW L VOUT

2 2
+ + + +
C1 C4 Di C2 C1 C4 Di C2
PReg. PReg.
5 ON/OFF 5 ON/OFF
R1
SI-8008HFE SI-8050HFE
C3 C3
+ ADJ 4 + ADJ
– –
4
+ R2 –
+
– +
GND GND
3 3
C1 : 1500µF
C2 : 1000µF
C3 :1µF (Only when using soft-start function)
C4 :4.7µF (RPER11H475K5 (Murata Manufacturing) recommended)
L1 :100µH
Di : FMB-G16L (Sanken)
ICs 69
SI-8000Y Series Current

Full-Mold,Mode
Separate
Control
Excitation
Step-down
Step-down
Switching
Switching
Mode
ModeRegulator
RegulatorICs
ICs

• Compact (equivalent to TO220) full-mold
package Input Voltage VIN 45 V
• Output current: 8.0 A PD1 20.8(With infinite heatsink) W
Power Dissipation
• High efficiency: 86 to 94% PD2 1.8(Without heatsink, stand-alone operation) W
• Built-in reference oscillator (130 kHz) Junction Temperature Tj –30 to +150 °C

• Built-in drooping-type-overcurrent protection
Thermal Resistance (Junction to Case) θj-c 6 °C/W
and thermal protection circuits
Thermal Resistance (Junction to Ambient Air) θj-a 66.7 °C/W
• Built-in soft start circuit (Output ON/OFF
available)
■Applications
• AV equipment
• OA equipment
• Gaming equipment

Raings
SI-8010Y SI-8050Y
Input Voltage Range VIN 8 or VO+3* to 43 8 to 43 V
Output Voltage Range Vo 1 to 15 5 V
Output Current Range Io 0 to 8.0 A
*: The minimum value of the input voltage range is 8 V or Vo + 3V, whichever is higher.
■Electrical Characteristics *(R1=8kΩ, R2=2kΩ when Ta=25°C and Vo=5V)

Ratings
Parameter Symbol SI-8010Y* SI-8050Y Unit
mIN. typ. max. mIN. typ. max.
Output Voltage VO(VREF) 0.98 1.00 1.02 4.90 5.00 5.10
V
(Reference voltage for SI-8010Y) Conditions VIN=30V, Io=0.1A VIN=30V, Io=0.1A
Temperature Coefficient of Output Voltage ∆VO/∆T(∆VREF/∆T) ±0.1 ±0.5
mV/°C
(Reference voltage temperature coefficient for SI-8010Y) Conditions VIN=30V, Io=0.1A, Ta=0 to 100°C VIN=30V, Io=0.1A, Ta=0 to 100°C
η 86 86
Efficiency %
fo 130 130
∆VOLINE 30 90 30 90
Line Regulation mV
∆VOLOAD 30 90 30 90
Load Regulation mV
Conditions VIN=30V, Io=0.1 to 8A VIN=30V, Io=0.1 to 8A
Is 8.1 8.1
Iq 8 8
mA
Conditions VIN=30V, Io=0A, EN/SS=open VIN=30V, Io=0A, EN/SS=open
Iq(OFF) 200 500 200 500
µA
Conditions VIN=30V, EN/SS=0V VIN=30V, EN/SS=0V
Outflow Current at ISSL 10 30 10 30
µA
Low Voltage Conditions VIN=30V, EN/SS=0V VIN=30V, EN/SS=0V
EN/SS Pin*
VSSL 0.5 0.5
Low Level Voltage V
Error Amplifier Voltage Gain AEA 300 300 V/V
Error Amplifier Transformer Conductance GEA 800 800 µA/V
Current Sense Amplifier Impedance 1/GCS 0.16 0.16 V/A
Maximum ON Duty DMAX 92 92 %
Minimum ON Time DMIN 200 200 nsec
SI-8000Y SI-8000Y
5 SS 5 SS
C3 C3
Soft start Soft start

+VOUT. ON/OFF
70 ICs
SI-8000Y Series
10.0±0.2
4.2±0.2
Gate burr
2.8±0.2
0.5
4.0±0.2
7.9±0.2
φ 3.2±0.2
16.9±0.3
Pin Assignment
q BS
17.6±0.7
7.6±0.1 w SW
(Measured at the root) e VIN
(3-R1)
6-0.74±0.15 r GND
2.8
t COMP
10±0.5
+0.2
6-0.65 –0.1 R-end
y FB
(5.3)
u EN/SS
0.45 –0.1
+0.2
4.3±0.5 3.6±0.5 Flammability: UL94V-0
(Measured at the root) Product Mass: Approx. 2.3g
0.5 0.5
1 234 567 Plan View
■Block Diagram
SI-8010Y SI-8050Y
3 3
IN IN
Current Current
Pre OSC Sence Pre OSC Sence
REG Amp REG Amp
Boot 1 Boot 1
5vREG 5vREG
BS BS
+ +
– PWM DRIVE – PWM DRIVE
7 EN/ LOGIC 2 7 EN/ LOGIC 2
SS UVLD SS UVLD
TSD SW TSD SW
EN/SS OCP EN/SS OCP
5 COMP 6 5 COMP 6
– –
– 1.0V – 1.0V
+ FB + FB
Amp Amp
GND GND
4 4

Csn1 Rsn1
Vin Vin
C5 C5
3 1 3 1
2 L1 Vo 2 L1 Vo
IN BS SW IN BS SW
7 7
C1 + C2 C1 + C2
SI-8010Y D1 SI-8050Y D1
EN/SS R1 EN/SS
6 C3 6 C3
FB + FB +
COMP GND COMP GND
C6 C6
5 4 R2 5 4
Csn2
C4 C4
C7 C7
Rsn2
R3 R3
GND GND GND GND
SI-8010Y SI-8050Y
C1:2200µF/50V Csn1,2=2200pF (When Vin>40V) C1:2200µF/50V
C2:4.7µF/50V Rsn1,2=10Ω (When Vin>40V) C2:4.7µF/50V
C3:470µF/25V C3:470µF/25V
C4:1200pF C4:1200pF
C5:0.22µF/50V C5:0.22µF/50V
C7:680pF C7:680pF
L1:47µH L1:56µH
D1:FMW-2106 (Sanken) D1:FMW-2106 (Sanken)
R1:8kΩ (When Vo=5V) R3:39kΩ
R2:2kΩ
R3:39kΩ
ICs 71
SI-8011NVS Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs

• Surface-mount package (TSSOP24) Parameter Symbol Ratings Unit
• High efficiency due to synchronous rectifica- Control-System DC Input Voltage VCC 7 V
tion: 93% (at VIN = 5V, IO = 1A, VO = 2.5V)
Boost Block Input Voltage VH 30 V
• Capable of downsize a choke-coil due to IC's EN Terminal Input Voltage VEN VCC V
high switching frequency (250kHz typ, On PWRGD Terminal Applied Voltage VPWRGD 7 V
Time Control). (Compared with conventional Junction Temperature Tj +150 °C
Sanken devices) Storage Temperature Tstg –40 to +150 °C
• Low reference voltage (Vref) of 1.1V. The
output voltage is variable from 1.1V to 6V.
• High-speed response to a load
• Compatible with low ESR capacitors
• Soft start and output ON/OFF available
• Built-in overcurrent protection circuit
• PWRGD function to indicate the output voltage
status
• High precision reference voltage: 1.1V ± 1.2%
■Applications
• Power supplies for notebook PCs and mobile devices
• OA equipment

Control System Input Voltage Range VCC 4.5 to 5.5 V
Input Voltage Range VIN 3 to 18 V
■Electrical Characteristics (Ta = 25°C unless otherwise specified)

Ratings
min. typ. max.
Dynamic Output Voltage VO –1.2% 1.1 +1.2% V VIN=5V, VCC=5V, VSNS connected to VO, IO=0A
Characteristics Temperature Coefficient of Output Voltage ∆VO/∆T ±0.03 mV/°C VIN=5V, VCC=5V, VSNS connected to VO, IO=0A, Ta=0 to 85°C
Circuit Current (VCC Terminal) Iop 6 mA VCC=5V, EN=H, FADJ:open
Circuit Circuit Current (VIN Terminal) Iop 1 mA VIN=5V, EN=H
Current Standby Current 1 (VCC Terminal) Istd1 100 µA VCC=5V, EN=L
Standby Current 2 (VIN Terminal) Istd2 50 µA VIN=5V, EN=L
Undervoltage UVLO Operating Voltage 1 (VCC Terminal) Vuvlo1 3.7 4.4 V VIN=5V
Lockout UVLO Operating Voltage 2 (VIN Terminal) Vuvlo2 2.5 2.9 V VCC=5V
On Time Ton 2 µS VCC=5V, VIN=5V, VO=2.5V
On Time Minimum Off Time Toff 1 µS VCC=5V
Control REF Terminal Voltage Vref 1.1 1.2 1.3 V VCC=5V
REF Terminal Source Current Iref 100 µA VCC=5V
High Side On Resistance (high side) RonHH 5.5 Ω VH-VLIN=5V
Drive On Resistance (low side) RonHL 5.5 Ω VH-VLIN=5V
Low Side On Resistance (high side) RonLH 5.5 Ω VCC=5V
Drive On Resistance (low side) RonLL 5.5 Ω VCC=5V
Bootstrap Bootstrap Voltage VH-VLIN 4.5 5 5.5 V
Current for Current Limit Detection Ilim 90 100 110 µA VCC=5V, VIN=5V
Soft Start Terminal Current Iss ±20 µA VCC=5V
EN Low Level Voltage Vcelo 0 0.8 V VCC=5V
EN High Level Voltage Vcehi 2.4 VCC V VCC=5V
Protection EN Bias Level Current ICE 5 µA VCC=5V, EN=5V
System PWRGD Good Voltage (high side) Vsens 1.32 V VCC=5V
PWRGD Good Voltage (low side) Vsens 0.88 V VCC=5V
PWRGD Low Output Voltage Vpwrgd 0.4 V VCC=5V, Ipwrgd=120µA
PWRGD Terminal Current Ipwrgd 120 µA VCC=5V, Vpwrgd=0.4V
PWRGD Leakage Current Ipwrgd 5 µA Vpwrgd=5V
72 ICs
SI-8011NVS
■External Dimensions (TSSOP24) (Unit : mm)
2.0 φ Mirror surface

Depth 0.02 to 0.08
A
°
11
24 13
°
11
Depth 0.02 to 0.08
5.60±0.1
7.6±0.2
(6.4)
3.00
1.90
°
11
1 12
°
11
+0.1
0.65 0.15 –0.05
0.375 TYP
0.22+0.1
–0.05
0.12 M A
7.80±0.1 0.4
7.9±0.2
11°
11°
1.15±0.05
°
11
S Product Mass: Approx. 1.36g
0 to 10
0.10±0.05
11° 0.50±0.2
0.08 S
°
■Block Diagram (Pin Assignment)
VIN
+
+5V
VCC1 ILIM VIN ISEN VCC2
OCP
PRE_REG Vpreg VH
EN EN Level
Shift Latch Buff
H : ON UVLO Gate Driver DRVH
L : OFF OFF Clamp
VO
Synchronous LIN
Cont.
+
(Logic)
POWER_GOOD Logic Buff

Power DRVL
H : GOOD PWRGD Good
L : NG PGND
–
+
Switching
VO
Constant On
Time Cont. +
VSNS
COMP
–
–
OSC
+ SS
GND
OVP_SL
14 12
FADJ FSET SS SKIP
Open : Change Frequency
Open : Skip Mode
Short : 400KHz Operation
L : No Skip Mode

MOS FET Q1, Q2
VIN
R2 • Be sure to use logic type MOS FET as Q1 and Q2.
C1 : 10 µ F
VCC : 5V If you use a normal power MOS FET type, the ON resistance may not drop to a
satisfactory level due to a shortage of VGS. This may deteriorate the efficiency
D2 : SFPL52 C7 : 0.1 µ F
R1 and cause overheating.
5mΩ
Diode D1
R5
10Ω • Be sure to use a Schottky-barrier diode for D1.
1
NC NC
24
Q1
If other diodes like fast recovery diodes are used, IC may be destroyed because
L1 : 10 µ H of the reverse voltage generated by the recovery voltage or ON voltage.
2 23
DRVH LIN VO
Choke coil L1
3 22 Q2 + C2 :
VH DRVL D1
330 µ F
• If the winding resistance of the choke coil is too high, the efficiency may drop
R6 SJPJ-L3
4
VIN PGND
21 10Ω below the rated value.
C6 C9 5 20 C5 : 4.7 µ F
• Take care concerning heat radiation from the choke coil caused by magnetic
ISEN VCC2
0.1 ~ 1 µ F 1000 saturation due to overload or short-circuit load.
pF 6 19
ILIN LOSDACT R3 : 20Ω Capacitor C1, C2
C4 : 3.3 µ
7
GND
SI-8011NVS
VCC1
18
F
• As large ripple currents flow through C1 and C2, use high-frequency and low-
8 17 C8 : 220pF
VCC impedance capacitors aiming for switching-mode-power-supply use. Especially
VSNS SS
EN
R4 when the impedance of C2 is high, the switching waveform may become abnor-
VCC R10 R9 47kΩ
9 16
R7 2.2kΩ VO EN mal at low temperatures. For C2, do not use a capacitor with an extremely low
47kΩ C3
10
PWRGD SKIP
15
SKIP
0.1 µ F
equivalent series resistance (ESR) such as a ceramic capacitor, which may cause
PWRGD
11 14
an abnormal oscillation.
REF FADJ
12 13 * To create the optimum operating conditions, place the components as close as

NC NC
possible to each other.
R11 : 100kΩ
R8 : 200kΩ
ICs 73
SI-8405NL Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs

• Input voltage (Vin): 3.0 to 5.5 V Parameter Symbol Ratings Unit
• Synchronous rectification Input Voltage (VIN pin) VIN 6 V
• Output voltage precision ±1.2% EN/SS Pin Input Voltage VEN –0.3 to VIN V
• Oscillation Frequency: 250 kHz
• Overcurrent protection (Overcurrent value can
be set by the external resistor.)
• Output can be disabled ■Recommended Operating Conditions
• Undervoltage Lock Out Parameter Symbol Ratings Unit
Input Voltage Range VIN 3 to 5.5 V
• Soft start function
• High-speed load response Operating Temperature Range Top –40 to +85 °C
■Applications
• Power supply for LCD modules
• Power supply for notebook PC
• Power supply for LBP/PPC

Ratings
min. typ. max.
Vref 0.494 0.500 0.506
Reference Voltage V
Conditions VIN=5V, VEN=5V
Iop 5
Circuit Current (VIN Pin) mA
Conditions VIN=5V, VEN=H
Istd 400 600
Standby Current (VIN Pin) µA
Conditions VIN=5V, VEN=L
Ton 2
On Time µS
Conditions VIN=5V, Vo=2.5V
RonHH 3.5
High Side Drive Block ON Resistance (Pulled Up) Ω
Conditions VIN=5V, ID=0.1A
RonHL 3.5
High Side Drive Block ON Resistance (Pulled Down) Ω
RonLH 3.5
Low Side Drive Block ON Resistance (Pulled Up) Ω
RonLL 3.5
Low Side Drive Block ON Resistance (Pulled Down) Ω
Vlim 40 50 60
Overcurrent Detection Voltage mV
Conditions VIN=5V
Iss 7 10 13
EN/SS Pin Current µA
Conditions VIN=5V
Vcelo 0 0.8
EN/SS Low Level Voltage V
Conditions VIN=5V
Vth(SS Start) 0.8 0.9 1.0
V
Conditions VIN=5V
EN/SS Threshold Voltage
Vth(ON) 2.4
V
Conditions VIN=5V
Vuvloh 2.9 V
Undervoltage Lock Out (VIN)
Vuvlol 2.4 V
74 ICs
SI-8405NL
5.1±0.4 Pin Assignment

1.27 0.15+0.1
0.4±0.1 –0.05 q VIN
w EN/SS
0.5±0.1
8 7 6 5 e VO
r VSENS
6.2±0.3
4.4±0.2
t GND
y DRVL
u DRVH
1 2 3 4
i ISEN
1.27
0°
o1
0.995max.
0t
1.55±0.15
1.5±0.1
Flammability : UL 94V-0
Product Mass : Approx. 0.1 g
0.05±0.05
0.10
0.4±0.1 0.12 M
■Block Diagram
Vin
ISEN
UVLO
OCP
H_DRV H_Side_
DRVH
Drive
UVLO Synchronous
include
Dead-time
L_DRV L_Side_ DRVL
EN Drive
SS/EN
GND
EN/SS
Gate DRV
Vo
Comp
– VSNS
On-Timing
Generator +
Vref +
Zep
Vref 1 0.5V
SS_CON
Vin
1
C4
Vin C1
R1
EN SI-8400N R4
2 8
EN/SS ISEN
7 Q1
C3 DRVH L1 Vo
6 Q2
DRVL +
D1 C2
5
4 GND C1 : 10µF
VSNS
C2 : 330µF
Vo C3 : 0.022µF
3 C4 : 0.068µF
R2
L1 : 10µH
D1 : SJPB-L4 (Sanken)
R3
ICs 75
SI-8511NVS Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs

• Surface-mount package (TSSOP24) Parameter Symbol Ratings Unit
• High efficiency due to synchronous rectifica- Control-System DC Input Voltage VCC 7 V
tion: 92% (at VIN = 5V, IO = 1A, VO = 2.5V)
Boost Block Input Voltage VH 30 V
• Capable of downsize a choke-coil due to IC's EN Terminal Input Voltage VEN VCC V
high switching frequency (400kHz typ, On PWRGD Terminal Applied Voltage VPWRGD 7 V
Time Control). (Compared with conventional Junction Temperature Tj +150 °C
Sanken devices) Storage Temperature Tstg –40 to +150 °C
• Low reference voltage (Vref) of 1.1V. The
output voltage is variable from 1.1V to 6V.
• High-speed response to a load
• Compatible with low ESR capacitors
• Soft start and output ON/OFF available
• Built-in overcurrent and output-overvoltage
protection circuits
• PWRGD function to indicate the output voltage
status
• High precision reference voltage: 1.1V ± 1.2%
■Applications
• Power supplies for notebook PCs and mobile devices
• OA equipment

Control System Input Voltage Range VCC 4.5 to 5.5 V
Input Voltage Range VIN 3 to 18 V
■Electrical Characteristics (Ta=25°C unless otherwise specified)

Ratings
min. typ. max.
Dynamic Output Voltage VO –1.2% 1.1 +1.2% V VIN=5V, VCC=5V, VSNS connected to VO, IO=0A
Characteristics Temperature Coefficient of Output Voltage ∆VO/∆T ±0.03 mV/°C VIN=5V, VCC=5V, VSNS connected to VO, IO=0A, Ta=0 to 85°C
Circuit Current (VCC Terminal) Iop 6 mA VCC=5V, EN=H, FADJ:open
Circuit Circuit Current (VIN Terminal) Iop 1 mA VIN=5V, EN=H
Current Standby Current 1 (VCC Terminal) Istd1 100 µA VCC=5V, EN=L
Standby Current 2 (VIN Terminal) Istd2 50 µA VIN=5V, EN=L
Undervoltage UVLO Operating Voltage 1 (VCC Terminal) Vuvlo1 3.7 4.45 V VIN=5V
Lockout UVLO Operating Voltage 2 (VIN Terminal) Vuvlo2 2.5 2.9 V VCC=5V
On Time Ton 1.27 µS VCC=5V, VIN=5V, VO=2.5V
On Time Minimum Off Time Toff 0.7 µS VCC=5V
Control REF Terminal Voltage Vref 1.1 1.2 1.3 V VCC=5V
REF Terminal Source Current Iref 100 µA VCC=5V
High Side On Resistance (high side) RonHH 5.5 Ω VH-VLIN=5V
Drive On Resistance (low side) RonHL 5.5 Ω VH-VLIN=5V
Low Side On Resistance (high side) RonLH 5.5 Ω VCC=5V
Drive On Resistance (low side) RonLL 5.5 Ω VCC=5V
Bootstrap Bootstrap Voltage VH-VLIN 4.5 5 5.5 V
Current for Current Limit Detection Ilim 90 100 110 µA VCC=5V, VIN=5V
Soft Start Terminal Current Iss ±20 µA VCC=5V
EN Low Level Voltage Vcelo 0 0.8 V VCC=5V
EN High Level Voltage Vcehi 2.4 VCC V VCC=5V
Protection EN Bias Level Current ICE 5 µA VCC=5V, EN=5V
System PWRGD Good Voltage (high side) Vsens 1.32 V VCC=5V
PWRGD Good Voltage (low side) Vsens 0.88 V VCC=5V
PWRGD Low Output Voltage Vpwrgd 0.4 V VCC=5V, Ipwrgd=120µA
PWRGD Terminal Current Ipwrgd 120 µA VCC=5V, Vpwrgd=0.4V
PWRGD Leakage Current Ipwrgd 5 µA Vpwrgd=5V
76 ICs
SI-8511NVS
■External Dimensions (TSSOP24) (Unit : mm)

Depth 0.02 to 0.08
A
°
11
24 13
°
11
Depth 0.02 to 0.08
5.60±0.1
7.6±0.2
(6.4)
3.00
1.90
°
11
1 12
°
11
+0.1
0.65 0.15 –0.05
0.375 TYP
0.22+0.1
–0.05
0.12 M A
7.80±0.1 0.4
7.9±0.2
11°
11°
1.15±0.05
°
11
S Product Mass: Approx. 1.36g
0 to 10
0.10±0.05
11° 0.50±0.2
0.08 S
°
■Block Diagram (Pin Assignment)
VIN
+
+5V
VCC1 ILIM VIN ISEN VCC2
OCP
PRE_REG Vpreg VH
EN EN Level
Shift Latch Buff
H : ON UVLO Gate Driver DRVH
L : OFF OFF Clamp
VO
Synchronous LIN
Cont.
+
(Logic)
POWER_GOOD Logic Buff

Power DRVL
H : GOOD PWRGD Good
L : NG PGND
–
+
Switching
VO
Constant On
Time Cont. +
VSNS
COMP
–
–
OSC
+ SS
GND
OVP_SL
14 12
FADJ FSET SS SKIP
Open : Change Frequency
Open : Skip Mode
Short : 400KHz Operation
L : No Skip Mode
VIN MOS FET Q1, Q2

R2
C1 : 10 µ F • Be sure to use logic type MOS FET as Q1 and Q2.
VCC : 5V If you use a normal power MOS FET type, the ON resistance may not drop to a
D2 : SFPL52 C7 : 0.1 µ F
satisfactory level due to a shortage of VGS. This may deteriorate the efficiency
R1
5mΩ
and cause overheating.
R5
10Ω Diode D1
1
NC NC
24
Q1
• Be sure to use a Schottky-barrier diode for D1.
L1 : 10 µ H If other diodes like fast recovery diodes are used, IC may be destroyed because
2 23
DRVH LIN VO
of the reverse voltage generated by the recovery voltage or ON voltage.
3 22 Q2 + C2 :
VH DRVL D1
330 µ F
R6 SJPJ-L3 Choke coil L1
4 21 10Ω
VIN PGND
• If the winding resistance of the choke coil is too high, the efficiency may drop
C6 C9 5 20 C5 : 4.7 µ F R13
0.1 ~ 1 µ F 1000 ISEN VCC2 below the rated value.
pF 6
ILIN OVP_SL
19 • Take care concerning heat radiation from the choke coil caused by magnetic
R12
SI-8511NVS saturation due to overload or short-circuit load.
7 18 C4 : 3.3 µ F
GND VCC1
VCC
8
VSNS SS
17 C8 : 220pF Capacitor C1, C2
R4
VCC R10 R9 9 16
EN 47kΩ • As large ripple currents flow through C1 and C2, use high-frequency and low-
R7 VO EN
47kΩ
2.2kΩ
SKIP C3
impedance capacitors suitable for switching mode power supplies. Especially
10 15
PWRGD SKIP 0.1 µ F when the impedance of C2 is high, the switching waveform may become abnor-
PWRGD
11
REF FADJ
14 mal at low temperatures. For C2, do not use a capacitor with an extremely low
12 13
equivalent series resistance (ESR) such as a ceramic capacitor, which may cause
NC NC
an abnormal oscillation.
R11 : 100kΩ
R8 : 200kΩ * To create the optimum operating conditions, place the components as close as
possible to each other.
ICs 77
SI-8405NH Surface-Mount, Synchronous Rectifier Step-down Switching Mode Regulator Control ICs

• Input voltage (Vin): 3.0 to 5.5 V Parameter Symbol Ratings Unit
• Synchronous rectification Input Voltage (VIN pin) VIN 6 V
• Output voltage precision ±1.2% EN/SS Pin Input Voltage VEN –0.3 to VIN V
• Oscillation Frequency: 750 kHz
• Overcurrent protection (Overcurrent value can
be set by the external resistor.)
• Output can be disabled ■Recommended Operating Conditions
• Undervoltage Lock Out
Input Voltage Range VIN 3 to 5.5 V
• Soft start function
Output Voltage Range Vo 0.5 to 4 V
• High-speed load response Operating Temperature Range Top –30 to +85 °C
■Applications
• Power supply for LCD modules
• Power supply for notebook PC

Ratings
min. typ. max.
Vref 0.494 0.500 0.506
Reference Voltage V
Conditions VIN=5V, VEN=5V
Iop 5
Circuit Current (VIN Pin) mA
Conditions VIN=5V, VEN=H
Istd 400 600
Standby Current (VIN Pin) µA
Conditions VIN=5V, VEN=L
Ton 0.65
On Time µS
Conditions VIN=5V, Vo=2.5V
RonHH 3.5
High Side Drive Block ON Resistance (Pulled Up) Ω
RonHL 3.5
High Side Drive Block ON Resistance (Pulled Down) Ω
RonLH 3.5
Low Side Drive Block ON Resistance (Pulled Up) Ω
RonLL 3.5
Low Side Drive Block ON Resistance (Pulled Down) Ω
Vlim 40 50 60
Overcurrent detection voltage mV
Conditions VIN=5V
Iss 7 10 13
EN/SS Pin Current µA
Conditions VIN=5V
Vcelo 0 0.8
EN/SS Low Level Voltage V
Conditions VIN=5V
Vth (SS Start) 0.8 0.9 1.0
V
Conditions VIN=5V
EN/SS Threshold Voltage
Vth (ON) 2.4
V
Conditions VIN=5V
Vuvloh 2.9 V
Undervoltage Lock Out (VIN)
Vuvlol 2.4 V
78 ICs
SI-8405NH
5.1±0.4
Pin Assignment
1.27 0.15+0.1
0.4±0.1 –0.05
q VIN
w EN/SS
0.5±0.1
8 7 6 5 e VO
r VSENS
6.2±0.3
4.4±0.2
t GND
y DRVL
u DRVH
1 2 3 4
i ISEN
1.27
0°
o1
0.995max. Plastic Mold Package Type
0t
1.55±0.15
1.5±0.1
0.05±0.05
0.10
0.4±0.1 0.12 M
■Block Diagram
Vin
ISEN
UVLO
OCP
H_DRV H_Side_
DRVH
Drive
UVLO Synchronous
include
Dead-time
L_DRV L_Side_ DRVL
EN Drive
SS/EN
GND
EN/SS
Gate DRV
Vo
Comp
– VSNS
On-Timing
Generator +
Vref +
Zep
Vref 1 0.5V
SS_CON
Vin
1
C4
Vin C1
R1
EN SI-8400N R4
2 8
EN/SS ISEN
7 Q1
C3 DRVH L1 Vo
6 Q2
DRVL +
D1 C2
C1 : 10µF
5
4 GND C2 : 330µF
VSNS
C3 : 0.022µF
Vo C4 : 0.1µF
3 L1 : 2.7µH
R2
D1 : SJPB-L4 (Sanken)
R3
ICs 79
SI-8205NHD Full-Mold,
Surface-Mount,Separate
Current Mode
Excitation
Control, Synchronous
Step-down Rectifier
Switching
Step-down
Mode
Switching
Regulator
Mode Regulator
ICs ICs

• Compact surface-mount (HSOP8) package Parameter Symbol Ratings Unit Conditions
• Wide input voltage range (VIN): Vo + 3 to 43 V Input Voltage (VIN Pin) VIN 46 V
Power Dissipation*1 PD 1.35 W When mounted on a 30 × 30 mm glass-epoxy board (with a 25 × 25 mm copper area)
• Synchronous rectifier mode
• Output current: 3 A Storage Temperature Tstg –40 to +150 °C
• Reference voltage and accuracy of 0.5 V ±1% Thermal Resistance (Junction to Lead <1 pin>) θj-c 40 °C/W
Thermal Resistance (Junction to Ambient Air) θj-a 74 °C/W When mounted on a 30 × 30 mm glass-epoxy board (with a 25 × 25 mm copper area)
• Oscillation frequency: 200 kHz to 1 MHz
• Output can be disabled
• Undervoltage Lock Out ■Recommended Operating Conditions
• Soft start function Parameter Symbol Ratings Unit
Input Voltage Range VIN Vo+3 to 43 V
Output Current Range Io 0 to 3.0 A
■Applications Output Voltage Range Vo 0.5 to 24 V
• Power supply for LCD module Operating Junction Temperature Range Tjop –40 to +125 °C
• Power supply for notebook PC Operating Temperature Range Top –40 to +85 °C

■Electrical Characteristics (Ta = 25°C and fo = 500kHz unless otherwise specified)

Ratings
min. typ. max.
Reference Voltage Vref 0.495 0.500 0.505 V VIN=12V, Io=1.0A
Temperature Coefficient of Reference Voltage ∆VREF/∆T ±0.05 mV/°C VIN=12V, Io=1.0A, Ta=–40 to +85°C
Efficiency η 90 % VIN=12V, Vo=5V, Io=1.0A
Oscillation Frequency 1 fo1 200 kHz VIN=12V, Vo=5V, Io=1A, Rfset=375kΩ
Oscillation Frequency 2 fo2 1 MHz VIN=12V, Vo=5V, Io=1A, Rfset=75kΩ
Line Regulation ∆VoLINE 50 mV VIN=8 to 43V, Vo to 5V, Io=1A
Load Regulation ∆VoLOAD 50 mV VIN=12V, Vo=5V, Io=0.1 to 3.0A
Overcurrent Protection Starting Current Is 3.1 6.0 A VIN=12V, Vo=5V
IIN 8 mA VIN=12V, Vcomp=0V
IIN(OFF) 40 µA VIN=12V, VEN/ss=0V
Outflow Current at Low Voltage IEN/SS 5 µA VEN/SS=0V, VIN=12V
EN/SS Pin Open Voltage VSSH 3.0 4.5 6.0 V VIN=12V
On Threshold Voltage VC/EH 0.6 1.3 2.0 V VIN=12V
OVP Start Voltage Vovp 0.57 0.60 0.63 V
Thermal Protection Start Temperature Tj 151 160 °C
Current Sense Amplifier Impedance GCS 3.33 A/V
Maximum ON Duty DMAX 90 % VIN=12V
Minimum ON Time DMIN 150 nsec VIN=12V
80 ICs
SI-8205NHD
Pin Assignment
0.05±0.05
0.08±0.08
Pin 1 Mark q GND
4.40
6.20
w EN/SS
e VIN
Enlarged View of A
r FSET
0.695 TYP
t COMP
1.50
5.20
A y FB
0.15
u BS
1.27
0.4 i SW
0.40
(0.52)
(0.27)
0.30
2.20
2.70
2.90
0.30 (0.55)
■Block Diagram
③VIN
+
REG CUR_SUS
–
REG DRV_REG REG_DRV
REG REG_DEV REG_DEV

REG
⑦BS
REG_BIAS STANDBY
STANDBY OVC
OCP_CMP BC H/S
RegOK Drv M1
REG_UVLO
VinOK VIN_UVLO Level
Shift
PWR_stage
REG ⑧SW
VinOK REG M2
REG VinOK
Phase Level L/S
GATE_logic Shift
Set PH Drv
Phase_ LSoft
Fere Off
Ramp logic
OSC_RAMP REG
FB STANDBY
LSoft
REG
FSET④
INIT CC
INIT PH
Res PH
REG
CUR_COMP VinOK
PH Open BS_CHG
OVT
REG
Fere_Off
OVT
Set PH Control_logic TSD BG
REG
RegOK INIT OVP
VinOK
OVP
OVP_CMP
REG_BIAS
REG
SS_Ref ⑥FB
REG BG Ref
EN_SS STANDBY Err_AMP Rnf
REF SS_Rnf
①GND
⑤COMP
C1:10µF/50V×2
(murata:GRM55DB31H106KA87)
VIN R5
C2:22µF/16V×2
C4
(murata:GRM32ER71A226KE20)
3 7
8
L1 VO C3:270pF
2 VIN BS
EN/SS SW (murata:GRM18 type)
C1
SI-8205NHD C4:10µF
4 6 C2
FSET FB (murata: GRM18 type)
GND COMP
R1 GND C5:1µF
C5 R4 1 5
C3
(murata: GRM18 type)
GND
L1:10µH
C6 R2
Open R3 D1 D1: SJPB-L6 (Sanken)
R1:9kΩ(When Vo=5V)
R2:1kΩ
R3:51kΩ
R4:150kΩ
R5:20Ω to 47Ω
ICs 81
STA810M Series Separate Excitation Switching Mode Regulator ICs with Flywheel Diode
• Output current: 1.5A Part Number Output Voltage (V)
• High efficiency: TYP83% (STA811M) STA811M 6.5
• Built-in flywheel diode (schottky-barrier diode)
• Requires only 3 discrete components: output
coil, input and output capacitors
■Absolute Maximum Ratings*1
• Phase correction and output voltage
adjustment performed internally Parameter Symbol Ratings Unit
• Built-in reference oscillator (125kHz) DC Input Voltage VIN 43 V
• Built-in foldback-overcurrent and thermal Output Current IO 1.5 A

protection circuits PD1 18.2 (With infinite heatsink) W
Power Dissipation*2
• Built-in ON/OFF circuit (soft start available) PD2 2.7 (Without heatsink, stand-alone operation) W
■Applications Thermal Resistance (junction to case) θ j-c 5.5 °C/W
• Power supplies for telecommunication Thermal Resistance (junction to ambient air) θ j-a 37 °C/W
equipment
*1: Absolute maximum ratings show the destructive limit. No parameter should exceed the ratings in transient or normal
operations.
• OA equipment
*2: Limited by thermal protection.
• For stabilization of the secondary-side output
voltage of switching power supplies
■Recommended Operating Conditions*1

Ratings
Parameter Symbol STA811M Unit Conditions
min. max.
VIN1 8.5 9.5 V IO=0 to 1A
DC Input Voltage Range
VIN2 9.5 40 V IO=0 to 1.5A
Output Current Range*2 IO 0 1.5 A VIN ≥ 9.5V
Operating Junction Temperature Range Tjop –30 +125 °C
Operating Temperature Range*2 Top –30 +80 °C
*1: Recommended operating conditions show operating conditions required for normal circuit function described in the electrical characteristics.
These conditions must be followed in actual use.
*2: Limited by Ta-PD characteristics.

Ratings
Parameter Symbol STA811M Unit
min. typ. max.
VO 6.37 6.5 6.63
Output Voltage V
η 83
Efficiency*1 %
fO 125
VOLINE 40 100
Line Regulation mV
VOLOAD 10 40
Load Regulation mV
Conditions VIN=28V, IO=0.2 to 1A
Temperature Coefficient of Output Voltage ∆VO/∆T ±0.5 mV/ °C
A
Starting Current Conditions VIN=28V
ON/OFF
Outflow Current ISSL 100
Pin*2 µA
at Low Voltage Conditions VSSL=0V
Quiescent Circuit Iq 7
mA
Current 1 Conditions VIN=28V, IO=0A
Quiescent Circuit Iq(OFF) 200
µA
Current 2 Conditions VIN=28V, VON/OFF=0.3A
*1: Efficiency is calculated from the following formula.
η (%) = VO·IO × 100 STA811M STA811M STA811M

VIN·IIN
*2: Pin 7 is the ON/OFF pin. Soft start at power on can be performed by connecting a
capacitor to this pin. The output can also be turned ON/OFF with this pin. The output is
7 ON/OFF 7 ON/OFF 7 ON/OFF
stopped by setting the voltage of this pin to VSSL or lower. ON/OFF-pin voltage can be
changed with an open-collector drive circuit of a transistor. When using both the soft-start
and ON/OFF functions together, the discharge current from C3 flows into the ON/OFF
C3 C3
control transistor. Therefore, limit the current securely to protect the transistor if C3
capacitance is large. The ON/OFF pin is pulled up to the power supply in the IC, so
+VO. ON/OFF
82 ICs
STA810M Series
■External Dimensions (SIP8 [STA 8Pin]) (Unit : mm)

4±0.2
2.3±0.2
9±0.2
1.7MAX
1.2±0.1 Pin Assignment
3.15±0.5
(Measured at
the root) q SWOUT
(1)
w GND
2–(R1)
e VIN
R-END r N.C
t GND
)
0.65
y VOS
2–(R
1.15+0.2
–0.1 0.55+0.2
–0.1
u ON/OFF
(3.1)
7×P2.54±0.1=17.78 4.3±0.7
(Measured at the root) (Measured at i GND
the tip)
C1.5±0.5 20.15±0.3

0.7 0.7
Plan View
1 2 3 4 5 6 7 8
■Block Diagram
STA811M
VIN SW L VOUT
3 VIN OUT 1
+ +
C1 PReg. Overcurrent C2
Protection
ON/OFF Di GND
7
ON/OFF Latch &
+ Reset 2
Soft Driver
C3 Start
Oscillator
+ Thermal VOS
– Protection 6
Comparator
+
–
Error Amp
Reference
Voltage
GND
5,8
■Typical Connection Diagram ■Thermal Derating

20
L1
With Infinite Heatsink Without Insulating Sheet
VIN 3.VIN 1.SW VOUT 18 With Silicone Grease
Heatsink: Alminum
STA811M 6.VOS 16
2.GND
14
+ 7.ON/OFF 5,8.GND +
C1 C2 12
10
100×100×2mm (11.5°C/W) 100
C3 PD = VO·IO –1
GND GND
8 ηχ
6 50×50×2mm (17.9°C/W)
4 VO : Output voltage
C1: 220 µF/50V 25×50×2mm
(25°C/W)
C2: 470 µF/25V 2 VIN : Input voltage
Without Heatsink (37°C/W) IO : Otuput current
C3: 0.47 µF/10V (Only when using soft start function) 0
L1: 100 µH –25 0 25 50 75 100 125 ηχ : Efficiency (%)
ICs 83
STA820M Series Separate Excitation Switching Mode Regulator ICs with Flywheel Diode
• Output current: 3A Part Number Output Voltage (V)
• High efficiency: TYP 83% (STA821M) STA821M 5
• Built-in flywheel diode (Schottky-barrier diode)

• Requires only 3 discrete components: output
coil, input and output capacitors ■Absolute Maximum Ratings*1
• Phase correction and output voltage Parameter Symbol Ratings Unit
adjustment performed internally DC Input Voltage VIN 31 V
Output Current IO 3 A
PD1 18.2 (With infinite heatsink) W
• Built-in foldback-overcurrent and thermal Power Dissipation*2
PD2 2.7 (Without heatsink, stand-alone operation) W
protection circuits Junction Temperature Tj +125 °C
• Built-in ON/OFF circuit (soft start available) Storage Temperature Tstg –40 to +125 °C
Thermal Resistance (Junction to Case) θ j-c 5.5 °C/W
■Applications
• Power supplies for telecommunication *1: The absolute maximum ratings show the destructive limit. No parameter should exceed the ratings in transient or
equipment normal operations.
*2: Limited by thermal protection.
• On-board local power supplies
• OA equipment
• For stabilization of the secondary-side output
voltage of switching power supplies

Ratings
min. max.
DC Input Voltage Range VIN 7 30 V
Output Current Range*2 IO 0 3 A
Operating Junction Temperature Range Tjop –30 +125 °C
Ambient Temperature Range*2 Top –30 +80 °C
*1: The recommended operating conditions show the operating conditions required for the normal circuit function described in the electrical characteristics. These conditions must be
followed in actual use.
*2: Limited by Ta-PD characteristics.

Ratings
min. typ. max.
VO 4.8 5.0 5.2
Output Voltage V
η 83
Efficiency*1 %
fO 110
VOLINE 40 100
Line Regulation mV
VOLOAD 10 40
Load Regulation mV
Temperature Coefficient of Output Voltage ∆VO/∆T ±0.5 mV/ °C
Overcurrent Protection Starting IS 3.1
A
Current Conditions VIN=20V
ON/OFF
Outflow Current ISSL 15 25 35
Pin*2 µA
at Low Voltage Conditions VSSL=0.2V
Iq 4

VO·IO
η(%) = × 100
VIN·IIN STA821M STA821M STA821M
*2: Pin 7 is the ON/OFF pin. Soft start at power on can be performed by connecting a
capacitor to this pin. The output can also be turned ON/OFF with this pin. The output is
stopped by setting the voltage of this pin to VSSL or lower. ON/OFF-pin voltage can be 7 ON/OFF 7 ON/OFF 7 ON/OFF
changed with an open-collector drive circuit of a transistor. When using both the soft-start
and ON/OFF functions together, the discharge current from C3 flows into the ON/OFF C3 C3
control transistor. Therefore, limit the current securely to protect the transistor if C3
capacitance is large. The ON/OFF pin is pulled up to the power supply in the IC, so
+VO. ON/OFF
84 ICs
STA820M Series
4±0.2
2.3±0.2
9±0.2
1.7MAX
1.2±0.1
3.15±0.5
(Measured at
the root) Pin Assignment
(1)
2–(R1)
q SWOUT
w GND
R-END
e VIN
r N.C
)
0.65
t GND
2–(R
1.15+0.2
–0.1 0.55+0.2
–0.1
(3.1)
7×P2.54±0.1=(17.78)
y VOS
4.3±0.7
(Measured at the root) (Measured at u ON/OFF
the tip)
C1.5±0.5 20.15±0.3 i GND

0.7 0.7
Plan View
1 2 3 4 5 6 7 8
■Block Diagram
STA821M
VIN SW L VOUT
3 VIN OUT 1
+ +
C1 Internal Overcurrent C2
Power Supply
Protection
Di GND
Latch & 2
Reset
Driver
Oscillator
7 + Thermal VOS
– Comparator Protection 6
ON/OFF
+
–
Error Amplifier
Reference
Voltage
GND
5,8
■Typical Connection Diagram ■Ta-PD Characteristics

20
L1 With Infinite Heatsink Without Insulating Sheet
1.SW
18 With Silicone Grease
VIN 3.VIN VOUT
Heatsink: Aluminum
STA821M 16
6.VOS
2.GND 14
+ 7.ON/OFF 5,8.GND +
C1 C2 12
100
PD = VO·IO –1
10 ηχ
100×100×2mm (11.5°C/W)
C3 8
GND GND
6 50×50×2mm (17.9°C/W)
VO : Output voltage
C1 : 1000µF/50V 4
25×50×2mm VIN : Input voltage
: 1000µF/25V
(25°C/W)
C2 2 IO : Output current
C3 : 0.47µF/10V(only when the soft start function is used) Without Heatsink (37°C/W)
0 ηχ : Efficiency (%)
L1 : 100µH –25 0 25 50 75 100 125
ICs 85
SI-8400L/8500L Series Separate Excitation Switching Mode Regulator ICs with Coil
• Switching ICs/Coil combined type Part Number SI-8401L SI-8501L
• Requires only 2 discrete components VO(V) 5.0 5.0
IO(A) 0.5 1.0
• Low switching noise
• No heatsink required
circuits
Ratings
• Built-in soft start circuit (Output ON/OFF Parameter Symbol Unit
SI-8400L SI-8500L
available)...SI-8500L Series
Power Dissipation PD 1.25 3 W
■Applications
• Telephone power supplies

Ratings
SI-8401L
Ratings
SI-8501L

Ratings
Parameter Symbol SI-8401L Unit
min. typ. max.
VO 4.80 5.00 5.20
Output Voltage V
η 80
Efficiency %
f 60
∆VOLINE 80 100
Line Regulation mV
∆VOLOAD 30 40
Load Regulation mV
Switching Ripple ∆Vr 20 40
Voltage (C2=470µF) mVp-p
Overcurrent Protection IS1 0.55
Starting Current A
Conditions VIN=10V
(Ta=25°C)
Ratings
Parameter Symbol SI-8501L Unit
min. typ. max.
VO 4.80 5.00 5.20
Output Voltage V
η 83
Efficiency %
f 60
∆VOLINE 70 130
Line Regulation mV
∆VOLOAD 30 55
Load Regulation mV
Switching Ripple ∆Vr 45
Voltage (C2=470µF) mVp-p
Overcurrent Protection IS1 1.1
Starting Current A
Conditions VIN=18V
86 ICs
SI-8400L/8500L Series
■External Dimensions (Non-package type [EI-12.5 core/EI-19 core]) (Unit : mm)
SI-8400L SI-8500L
VIN LIN
y r
e LIN
VIN r
12±0.5
±0.1
26
w GND
Vo q 14.5
±0.5 Not encapsulated in a plastic SK Not encapsulated in a plastic
Pin 1 marking package package
Product Mass: Approx. 5.1g Product Mass: Approx. 14.5g
q w e
VOUT SS GND
13.2±0.6
±0.1
26
10±0.2
Pin1 marking
φ 0.8max.
±0.6
4.7
(2.17) (10.16) (7.62) (2.19)
18
3.7
φ 0.6 2
4 18
■Block Diagram
SI-8400L SI-8500L
3 LIN 4 LIN
4 L1 1 6 L1 1
MIC1 MIC1
VIN VO VIN VO
Reg. OCP Reg. OCP
OSC Reset Latch OSC Reset Latch

& &
Drive Drive
Comp. TSD Comp. TSD

Di1 Di1
Amp. Amp.
VREF VREF
2 GND 2 S.S. 3 GND
VIN VIN VOUT VO VIN VIN SI-8500L VOUT VO

4 SI-8400L 1 6 1
GND LIN S.S GND LIN
+ + + +
C1 2 3 C2 C1 2 3 4 C2
220µF 470µF 470µF 470µF
N.C C3
N.C
GND GND GND GND
C3 is necessary only for using soft start function.
1.5
3.0 100
PD=VO•IO –1
SI-8400L SI-8500L
ηχ
1.0 2.0 VO : Output voltage

IO : Output current
1.0
0.5
The efficiency depends on the input voltage
and the output current. Therefore, obtain the
value from the efficiency graphs and substi-
0 0 tute the percentage in the formula above.
0 25 50 75 100 0 25 50 75 100
Ambient Temperature Ta (°C) Ambient Temperature Ta (°C)
ICs 87
88 ICs
1-1-3 Multi-Output Type Regulator ICs
Application Note
■ Heat Dissipation and Reliability ■ Mounting Torque
The reliability of an IC is highly dependent on its operating temperature. STA800M Series (when mounted by using a spring)
Please be sure to apply silicone grease to the IC and to mount it to the 0.588 to 0.784 [N•m] (6.0 to 8.0 [kgf•cm]
heatsink with a proper mounting torque.
Heatsink design should pay particular attention to ensuring sufficient heat
dissipation capacity. ■ Recommended Silicone Grease
In addition, please take into account the air convection in operation.
The reliability of discrete components such as capacitors and coils is
closely related to temperature. A high operating temperature may reduce
• Dow Corning Toray Silicone Co., Ltd.: SC102
the service life. Exceeding the allowable temperature may burn the coils or
damage capacitors. It is important to make sure that the temperature of
products may penetrate the device and result in an extremely short de-
output smoothing coils and input/output capacitors do not exceed their
vice life.
allowable levels during operation. With an adequate derating for the coils,
minimize heat emission as far as possible. (For discrete components, refer
to the individual user manuals.)
■ Thermal Design
The maximum junction temperature Tj(max) given in the Absolute Maximum
Ratings is specific to each product type and must be strictly observed.
Thus, thermal design must consider the maximum power dissipation
PD(max), which varies by the conditions of use, and the maximum ambient
temperature Ta(max).
To simplify the thermal design, Ta-PD characteristic graphs are provided
herein. Please observe the following steps for heatsink design:
1. Obtain the maximum ambient temperature Ta(max).
2. Obtain the maximum power dissipation PD(max).
3. Look for the intersection point on the Ta-PD characteristic graph and
determine the size of the heatsink.
Although the heatsink size is now obtained, in actual applications, 10-to-
20% derating factor is generally introduced. Moreover, the heat dissipation
capacity of a heatsink highly depends on how it is mounted. Thus, it is
recommended to measure the heatsink or case temperature in the actual
operating environment.
Please refer to the Ta-PD characteristic graphs for respective product
types.
ICs 89
STA801M 2-Output Separate Excitation Switching Mode Regulator ICs
• 2 regulators combined in 1 package Output Voltage (V)
Part Number
• Compact inline package Ch1 Ch2(Select one output)
STA801M 5 9.0 / 11.5 / 12.1 / 15.5
• Output current (0.5A × 2 outputs)
• Output voltage of Ch2 selectable from 4 levels
• Built-in flywheel diode (Schottky barrier diode) ■Absolute Maximum Ratings
• Requires only 7 discrete components (2 Parameter Symbol Ratings Unit
outputs) DC Input Voltage VIN 43 V
• Internally-adjusted phase corrections and output PD1 6.7(With infinite heatsink) W
Power Dissipation
voltages PD2 1.6(Without heatsink, stand-alone operation) W
• Built-in reference oscillator (125kHz) - Enables Storage Temperature Tstg –40 to +125 °C
to downsize a choke-coil due to IC's high
oscillating frequency. (Compared with conven-
tional Sanken devices)
• Built-in overcurrent and thermal protection circuits
• Built-in soft start circuits (Output ON/OFF available)
■Applications
• For BS and CS antenna power supplies
• For stabilization of the secondary stage of switching power supplies
• Electronic equipment

Ratings
min. max.
DC Input Voltage Range VIN Ch2 VOmax.+2 40 V
Output Current Range per Channel IO 0 0.5 A
Operating Temperature Range Tjop –20 +125 °C

Ratings
min. typ. max.
VO1 4.80 5.00 5.20
Ch1 Output voltage 1 V
η1 80
Efficiency * %
Temperature Coefficient of Output Voltage ∆VO/∆Ta1 ±0.5 mV/°C
∆VOLINE1 30 90
Line Regulation mV
∆VOLOAD1 10 40
Load Regulation mV
VO2-1 8.64 9.00 9.36
Ch2 Output voltage 2-1 V
(Select one output)
VO2-2 11.04 11.50 11.96
Output voltage 2-2 V
VO2-3 11.62 12.10 12.58
VO2-4 14.88 15.50 16.12
η 89
VO2-4 Efficiency* %
∆VOLINE 40 130
Line Regulation mV
∆VOLOAD 30 120
Load Regulation mV
Common No-load Circuit Current ICC 15 mA
Oscillation Frequency f 125 kHZ
Overcurrent Protection Starting Current IS1 0.51 0.7 A
* Efficiency indicates the value when only one channel is active. The value can be calculated as shown below. 7.5mA is deducted for the no-load circuit current of Icc at unused
2
output.
VO•IO
η= × 100(%)
VIN•(IIN–0.0075)
90 ICs
STA801M
4±0.2
3.15±0.5
9±0.2
1.2±0.1
(1)
Pin Assignment
2–(R1)
q VO2 Cont i SS2
R-END
.65)
+0.2 w VOS1 o VOS2–2
2–(R0
0.55 –0.1
(3.1)
1.15 +0.2
–0.1 0.55+0.2
–0.1 e SS1 !0 VOS2–1
4.3±0.7
9×P2.54±0.5=22.86±1 r SWOUT1
(Measured at
(Measured at the tip)
the tip) t GND Plastic Mold Package Type
25.25±0.3 y VIN Flammability: UL94V-0
C1.5±0.5 u SWOUT2 Product Mass: Approx. 2.5g
1 2 3 4 5 6 7 8 9 10
■Block Diagram
VIN 6 4 SW1
P.Reg.
OCP
SS1 3
PWM
Logic Drive
+
PWM
– 2 VOS1
+
Amp.
–
PWM
OSC
Vref
TSD
f/4
Reset
4 SW2
OCP
PWM 10 VOS2 –1
SS2 8
Logic Drive
+
PWM 9 VOS2 –2
–
VO2 Cont 1 +
Amp.
–
GND 5
Vref

STA800M
VIN 6 4 L1
VIN SWOUT1 VO1
+ C1 5V:100 µ H
220µF
C2 +
3 SS1 Ch 1 330µF
+ C4 VOS1
Open:ON 2
Low :OFF 0.47µ F For how to connect VOS2-1 and VOS2-2 of
L2 Channel 2, refer to the output selection
8 7
SS2 SWOUT2 VO2 method on the Sanken web site.
150 µ H
C5 +
Open:ON + 0.47µ F 10 C3
Low :OFF 1
VO2 Cont Ch 2 VOS2 330µF
–2
Or
GND
GND VOS2
5 –1 9
With Infinite Heatsink

6
2
Without Heatsink
0
–30 0 25 50 75 100 125
ICs 91
SPI-8001TW/SPI-8002TW/SPI-8003TW 2-Output, Step-down Switching Mode Regulator ICs
■Features ■Absolute Maximum Ratings*1

• 2 regulators combined in one package Ratings
• Output current: 1.5A × 2 (HSOP 16 Pin SPI-8001TW SPI-8002TW SPI-8003TW
Surface mount package) VIN 21 40 40 V

Input Voltage VCC 21 40 40 V
• High efficiency: TYP80% (SPI-8001TW), VC/E 21 40 40 V
TYP78% (SPI-8002TW) Power Dissipation*2, *3 PD 3.0 W
• Variable output voltage: 1.0 to 16V (SPI- Junction Temperature Tj +135 +150 °C
8001TW), 1.0 to 24V (SPI-8002TW) Storage Temperature Tstg –40 to +135 –40 to +150 °C
Thermal Resistance (junction to case)*2 θ j-c 9.0 °C/W
• Built-in reference oscillator (250kHz): Enables
Thermal Resistance (junction to ambient air)*2 θ j-a 35.8 °C/W
to downsize a choke-coil
*1: Absolute maximum ratings show the destructive limit. No parameter should exceed the ratings in transient or normal
• Low circuit current consumption: ≤ 1µA (at operations.
output OFF) *2: When mounted on glass-epoxy board 70cm2 (copper laminate area 30.8cm2).
• High accuracy reference voltage: ±1% *3: Limited by thermal protection.
• Built-in foldback-overcurrent and thermal

protection circuits
• Built-in ON/OFF circuit (soft start available) –
per output
■Applications
• OA equipment

Ratings
Parameter Symbol SPI-8001TW SPI-8002TW SPI-8003TW Unit
min. max. min. max. min. max.
VIN VO+3 20 VO+3 38 VO+3 38 V
Input Voltage Range VCC 4.5 20 4.5 38 4.5 38 V
VC/E 20 38 38 V
Output Voltage Range VO 1 16 1 24 1 24 V
Output Current Range IO 1.5 1.5 1.5 A
Operating Junction Temperature Range Tjop –30 +135 –30 +135 –30 +125 °C
Operating Temperature Range Top –30 +135 –30 +135 –30 +85 °C
*1: Recommended operating conditions show the operating conditions required for the normal circuit function described in the electrical characteristics.
These conditions must be followed in actual use.
92 ICs
SPI-8001TW/SPI-8002TW/SPI-8003TW
■Electrical Characteristics*1 (Ta=25°C)

Ratings
Parameter Symbol SPI-8001TW SPI-8002TW SPI-8003TW Unit
VREF 0.996 1.006 1.016 0.996 1.006 1.016 0.966 1.006 1.016
Reference Voltage V
Conditions VIN=10V, VO=1V, IO=0.1A VIN=14V, IO=0.1A
Temperature Coefficient ∆VREF/∆T ±0.1 ±0.1 ±0.1
mV/ °C
of Reference Voltage Conditions VIN=10V, VO=1V, IO=0.1A, Ta=–30 to +135°C VIN=14V, IO=0.1A, Ta=–30 to +125°C
Eff1 80 78 78
Efficiency 1*2 %
Conditions VIN=VCC=15V, VO=5V, IO=0.5A, IIN: including ICC VIN= VCC=14V, VO=5V, IO=0.5A, IIN : including ICC
Eff2 83 81 81
Efficiency 2*2 %
Conditions VIN=15V, VO=5V, IO=0.5A, VCC=5V, IIN: excluding ICC VIN=14V, VCC=5V, VO=5V, IO=0.5A, IIN : excluding ICC
fosc 250 215 250 285 200 400
Conditions VIN=VCC=15V, VO=5V, IO=0.5A VIN=14V, IO=0.1A, COSC=100pF
VLINE 30 60 30 60 30 60
Line Regulation mV
Conditions VIN=VCC=10 to 20V, VO=5V, IO=1A VIN=VCC=9 to 18V, VO=5V, IO=1A
VLOAD 10 40 10 40 10 40
Load Regulation mV
Conditions VIN=VCC=15V, VO=5V, IO=0.2 to 1.5A VIN=VCC=14V, VO=5V, IO=0.2 to 1.5A
Overcurrent Protection IS 1.6 1.6 1.6
A
Starting Current Conditions VIN=VCC=15V VIN=VCC=14V
IIN 4 4 4
Quiescent Circuit Current 1 mA
Conditions VIN=15V, VCC=5V, IO=0V, VO≤12V VIN=14V, VCC=5V, IO=0A, VO≤12V
ICC 8.5 8.5 8.5
Conditions VCC=15V, IO=0A VCC=14V, IO=0A
IIN (off) 1 1 1
Quiescent Circuit Current 3 µA
Conditions VIN=15V, VC/E=0V or Open VIN=14V, VC/E=0V or Open
ICC (off) 1 1 1
Quiescent Circuit Current 4 µA
Conditions VCC=15V, VC/E=0V or Open VIN=14V, VC/E=0V or Open
IIN (ssov) — 4
Conditions — VIN=14V, VCC=5V, IO=0A, SS1=SS2=0V
ICC (ssov) — 8.5
Conditions — VCC=14V, IO=0V, SS1=SS2=0V
VC/EH 2 2 2
Conditions VIN=VCC=15V VIN=VCC=14V
VC/EL 0.8 0.8 0.8
C/E Pin Low Level Voltage V
Inflow Current IC/EH 95 95 95
µA
at High Conditions VC/E=20V VC/E=20V
VSSL 0.5 0.5 0.5
Low Level Voltage V
SS Pin*3
Inflow Current ISSL 60 80 60 80 60 80
µA
at Low Conditions VSSL=0V, VIN=VCC=15V VSSL=0V, VIN=VCC=14V
*1: Electrical characteristics show the characteristic ratings guaranteed when operating the ICs under the measurement conditions described in the above table.
η (%) = VO·IO × 100

VIN·IIN
*3: Pin 6 and pin 11 are the SS pins. Soft start at power on can be performed with capacitors connected to these pins. The outputs can also be turned ON/OFF with these pins. The
outputs are stopped by setting the voltages of these pins to VSSL or lower. SS-pin voltages can be changed with open-collector drive circuits of transistors.
When using both the soft-start and ON/OFF functions together, the discharge currents from C4 and C5 flow into the ON/OFF control transistors respectively. Therefore, limit the
currents securely to protect the transistors if C4 and C5 capacitances are large. The SS pins are pulled up to the power supply in the ICs, so applying the external voltages are
prohibited.
ICs 93
1.35±–0.2
1+0.1/–0.05
(Between the root of leads and
(Heatsink thickness) back side)
10.5±0.2
16 9
0 to 0.1
2.0+0.2/–0.08
10.5±0.3
0.9±0.3
0 to 8°
1 8
2.75MAX
2.5±0.2
Enlarged View of A
A
0.25+0.15/–0.05
S 0.10 S
12.2±–0.2
(Gate remains: Not included in dimensions)
(11)
Pin Assignment Pin Assignment (SPI-8003TW)

(2)
q AGND o AGND q AGND o AGND

w VIN1 !0 VREF2 w VIN1 !0 ROSC
e VCC !1 SS2 e VCC !1 VREF2
7.5±0.2
r SWout1 !2 DGND2 r SWout1 !2 SS2

t DGND1 !3 SWout2 t DGND1 !3 DGND2
(4.5)
y SS1 !4 C/E y SS1 !4 SWout2

u VREF1 !5 VIN2 u VREF1 !5 C/E
16 9
i N.C !6 N.C i COSC !6 VIN2
1.27±0.25 0.4+0.15/–0.05
Product Mass : Approx.0.86g
■Block Diagram
VIN VIN
+ +
3 C1 C6 3 C1 C4
VCC
SPI-8001TW/SPI-8002TW VCC
SPI-8003TW
3V C/E 3V
14 15 OSC
VC/E Start VREF PReg OSC fdown TSD UVLO VC/E Start VREF PReg fdown TSD UVLO
C/E RESET
RESET 1V
1V 10 Rosc
VIN1 2 8 VIN1 2
f down Cosc
OCP R7 OCP
cut f down
3V C9 3V
cut
6 SS1 PWM 6 SS1 PWM

Drive Drive
R5 Logic SWOUT1 L1 VO1 R5 Logic SWOUT1 L1 VO1
+ + 4 + + 4
+ – – –
7 VREF1 – – + 7 VREF1 – – +
C4 – PWM DGND1 5 Di1 +
PWM DGND1 5 Di1
Buffer-Amp Amp C2 C7 Buffer-Amp Amp C2 C7
C5
f down VIN2 15 f down VIN2 16
AGND AGND
cut OCP R1 cut OCP R1
3V 3V
R2 R2
11 SS2 PWM 12 SS2 PWM
Drive Drive
R6 10 VREF2 Logic SWOUT2 13 L2 VO2 R6 11 VREF2 Logic SWOUT2 14 L2 VO2
+ + + +
+ – – –
– – + – – +
C5 – PWM Di2 + PWM Di2
Buffer-Amp Amp C3 C8 Buffer-Amp Amp C3 C8
DGND2 12 C6 DGND2 13
AGND AGND
AGND AGND
1, 9 1, 9
R3 R3
R4 R4
94 ICs
SPI-8001TW/SPI-8002TW/SPI-8003TW
VIN VC/E VIN VC/F

3 14 3 15
VCC C/E VCC C/E

2 4 L1 2 4 L1
VIN1 SWout1 V01 VIN1 SWout1 VC1
6 Ch1 R1 6 Ch1 R1
SS1 Di1 SS1 Di1
7 + 7 +
VREF1 VREF1
R5 C2 C7 R5 C2 C7
5 5
DGND1 IREF1 R2 DGND1 IREF1 R2
C4 C5
+
SPI-8000TW +
SPI-8003TW
15 13 16 14
C6 C1 VIN2 SWout2 V02 C4 C1 VIN2 SWout2 VC2
L2 L2
11 R3 12 R3
SS2 Di2 SS2 Di2
Ch2 10 + Ch2 11 +
VREF2 VREF2
R6 C3 C8 R6 C3 C8
12 13
DGND2 IREF2 R4 DGND2 IREF2 R4
C5 AGND C6 AGND CORC RCSC
1, 9 1, 9 8 10
GND GND
R7
C9
GND GND
C1 : 220 µF/50V R5, R6 : 1kΩ
C2, C3 : 470 µF/25V L1, L2 : 47 µH C1 : 220 µF/50V C9 : 100pF/10V
C4, C5 : 1 µF Di1, Di2 : SJPB-H6 C2, C3 : 470 µF/25V L1, L2 : 47 µH
C6, C7, C8 : 0.1 µF (Sanken) C4 : 1 µF/50V R2, R4 : 1kΩ
C5, C6 : 1 µF/10V R5, R6 : 1kΩ
C7, C8 : 0.1 µF/50V Di1, Di2 : SJPB-H6 (Sanken)
Diodes Di1, Di2
• Be sure to use Schottky-barrier diodes for Di1 and Di2.
If other diodes like fast recovery diodes are used, IC may be destroyed because of the reverse voltage generated by the recovery voltage or ON voltage.
Choke coils L1, L2
• As the overcurrent protection starting current is about 2.0A, take care concerning heat radiation from the choke coil caused by magnetic saturation due to
• Use a closed-magnetic-path coil to prevent interference between the channels SWout1 and SWout2.
Capacitors C1, C2, C3
• As large ripple currents flow through C1, C2 and C3, use high-frequency and low-impedance capacitors suitable for switching mode power supplies.
Especially when the impedance of C2 and C3 are high, the switching waveforms may become abnormal at low temperatures. For C2 and C3, do not use
capacitors with extremely low equivalent series resistance (ESR) such as OS capacitors or tantalum capacitors, which may cause abnormal oscillation.
Resistors R1, R2, R3, R4
• R1, R2, R3 and R4 are resistors for setting output voltages. Set the resistors so that IREF is approx. 1 mA. For example, R1 and R2 can be calculated as
shown below.
(VO1–VREF1) (VO1–V) VREF1 1 .=

R1= = (Ω), R2= = 1(KΩ)
IREF1 1×10–3 IREF1 1×10–3 .
3.5
θ j-a (Copper Laminate Area)
35.8°C/W (30.8 cm2)
3.0 38.2°C/W (15.6 cm2)
100 VO
PD = VO·IO –1 – VF·IO 1–
42.6°C/W (8.64 cm2)

ηχ VIN
2.5
52.3°C/W (3.34 cm2)
2.0
VO : Output Voltage
69.2°C/W (0.84 cm2)
1.5 VIN : Input Voltage
IO : Output Current
1.0 ηχ : Efficiency (%)
VF : D1 Forward Voltage
0.5
SJPB-H6···0.45V (IO=1A)
0.0
–25 0 25 50 75 100 125 135 150
Note 1: The efficiency depends on the input voltage and the output current. Therefore, obtain the value from the efficiency graph and substitute the percent-
age in the formula above.
Note 2: Thermal design for D1 must be considered separately.
ICs 95
SI-3000KWM Series 2-Output, Surface-Mount, Low Dropout Voltage Linear Regulator ICs

• Compact surface-mount package (TO252-5) Ratings
• Output current: 1.0A × 2 SI-3002KWM
DC Input Voltage VIN*1 18 V
• Low dropout voltage: VDIF ≤ 0.6V (at IO = 1A) Output Control Terminal Voltage VC 6 V
• Built-in overcurrent and thermal protection IO1 1.0
Output Current*1 A
circuits IO2 1.0
Power Dissipation (with two outputs ON) PD*2 1 W
■Applications Operating Ambient Temperature Top –30 to +85 °C
• Secondary stabilized power supply (local Storage Temperature Tstg –40 to +125 °C
power supply) Thermal Resistance (Junction to Ambient Air) θ j-a 95 °C/W
Thermal Resistance (Junction to Lead) θ j-c 6 °C/W
*1: VIN (max), IO1 (max) and IO2 (max) are restricted by the relation PD = (VIN – VO1) × IO1 + (VIN - VO2) × IO2.
*2: When mounted on glass-epoxy board of 30 × 30mm2 (copper laminate area 4.3%)
Thermal protection may operate when the junction temperature exceeds 135°C.
Ratings
Parameter Symbol SI-3002KWM Unit
min. typ. max.
VO1 3.234 3.300 3.366
Conditions VIN=5V, IO=10mA
Output Voltage V
VO2 2.450 2.500 2.550
Conditions VIN=5V, IO=10mA
∆VOLINE1 20
Conditions VIN=4.5 to 10V, IO=10mA
Line Regulation mV
∆VOLINE2 20
Conditions VIN=4.5 to 10V, IO=10mA
∆VOLOAD1 30
Load Regulation mV
∆VOLOAD2 30
VDIF1 0.6
Dropout Voltage V
Conditions IO=1A
∆VO1/∆Ta ±0.3
Temperature Coefficient of Conditions Tj=0 to 100°C
mV/°C
Output Voltage ∆VO2/∆Ta ±0.3
Conditions Tj=0 to 100°C
RREJ1 60
Conditions VIN=5V, f=100 to 120Hz
Ripple Rejection dB
RREJ2 60
Conditions VIN=5V, f=100 to 120Hz
IS1 1 1.2
Overcurrent Protection Starting Conditions VIN=5V
A
Current*1 IS1 2 1.2
Conditions VIN=5V
Iq 1 1.5
Conditions VIN=5V, IO=0A, VC=2V
Iq (OFF) 0.5
Circuit Current at Output OFF mA
Control Voltage (Output ON)*2 VC, IH 2 V
Control Voltage (Output OFF) VC, IL 0.8 V
VC Control Current IC, IH 5
µA
Terminal (Output ON) Conditions VC=2.7V
Control Current IC, IL –100
µA
(Output OFF) Conditions VC=0.4V
Output OFF Voltage VO(OFF) 0.5 V
*1: IS1 1 and IS1 2 are specified at the 5% drop points of output voltages VO1 and VO2 on the condition that VIN = the condition of protection starting current, IO = 10 mA.
*2: Output is ON when the output control terminal VC is open. Each input level is equivalent to LS-TTL. Therefore, the devices can be driven directly by LS-TTLs.
Channels 1 and 2 are turned on or off at the same time.
96 ICs
SI-3000KWM Series
6.60±0.20
5.34±0.20
±0.20 2.30±0.20
6.60 (5.04)
5.34±0.20 0.50 ±0.10
(1.50)
1.10±0.20
5
.32
R0
(4.06)
6.10±0.20
±0.30
9.90±0.30
SEATING PLANE
9.90
0.00 to 0.127
1.18±0.20
2.70±0.20
2.70±0.20
(0.89)
0.1
8° Pin Assignment
0 to
0.50±0.10 q VC
0.50±0.10
(1.00) w VO1
1.27 TYP 1.27 TYP
2.30±0.20 Plastic Mold Package Type e GND
1 2 3 4 5
Flammability: UL 94V-0 r VIN
Product Mass: Approx. 1.48 g t VO2
■Block Diagram
VIN VOUT1
4 2
+
CIN
Drive
REF +
+
OCP – COUT1
AMP2
ON/
VC OFF TSD
+
1 –
–
+
VOUT2
5
+
Drive
+ COUT2
–
OCP AMP2
GND
3
ICs 97
1-2 Motor Driver ICs
Selection Guide
2-Phase Stepper Motor Unipolar Driver ICs
Output Current (A) Motor Supply
Excitation Method Package Remarks Page
1.0 1.2 1.5 2.0 3.0 Voltage (V)
SLA7022MU SLA7029M to 46 ZIP15Pin with Fin 100
2-Phase Excitation SMA7022MU SMA7029M to 46 ZIP15Pin 100
SMA7036M to 46 ZIP15Pin 102
SLA7027MU SLA7024M SLA7026M to 46 ZIP18Pin with Fin 104
SLA7031M SLA7032M SLA7033M to 46 ZIP18Pin with Fin 106
SLA7050M SLA7051M SLA7052M to 46 ZIP18Pin with Fin Built-in sequencer 108
2-Phase/1-2 Phase
SLA7070MR SLA7071MR SLA7072MR SLA7073MR to 46 ZIP23Pin with Fin Built-in sequencer, Current sensing resistors 110
Excitation
SLA7070MPR SLA7071MPR SLA7072MPR SLA7073MPR to 46 ZIP23Pin with Fin Built-in sequencer, Current sensing resistors, Protection circuit 110
SLA7080MR SLA7081MR SLA7082MR SLA7083MR to 46 ZIP23Pin with Fin Built-in Current sensing resistors 112
SLA7080MPR SLA7081MPR SLA7082MPR SLA7083MPR to 46 ZIP23Pin with Fin Built-in Current sensing resistors, Protection circuit 112
2W 1-2 Phase Excitation SLA7042M SLA7044M to 46 ZIP18Pin with Fin 114
µ Step Support SLA7065M SLA7066M SLA7067M to 46 ZIP21Pin with Fin Built-in sequencer 116
SI-7321M to 46 HSOP44Pin Built-in sequencer 118
4W 1-2 Phase Excitation SLA7060M SLA7061M SLA7062M to 46 ZIP21Pin with Fin Built-in sequencer 120
µ Step Support SLA7075MR SLA7076MR SLA7077MR SLA7078MR to 46 ZIP23Pin with Fin Built-in sequencer, Current sensing resistors 122
SLA7075MPR SLA7076MPR SLA7077MPR SLA7078MPR to 46 ZIP23Pin with Fin Built-in sequencer, Current sensing resistors, Protection circuit 122
Serial Signal Generator for SLA704x

Part Number Power Supply Voltage (V) Package Page
PG001M 4.5 to 5.5 DIP16 124
3-Phase Stepper Motor Driver ICs

Excitation Method Part Number Power Supply Voltage (V) Output Current (A) Package Remarks Page
2-Phase/2-3 Phase Excitation SLA7611M to 36 3.0 ZIP18 with Fin(SLA18Pin) 126
5-Phase Stepper Motor Driver ICs

Excitation Method Part Number Power Supply Voltage(V) Package Remarks Page
New Pentagon Drive SI-7510 to 44 DIP30Pin SLA5073+SLA5074 for Outputs 128
Brush DC Motor Driver ICs

Output Current (A)
Part Number Power Supply Voltage (V) Package Remarks Page
Average Maximum
STA6940M 4.0 8.0(tw<100µS) 10 to 44 ZIP18Pin Single Full Bridge 130
Brushless DC Motor Driver ICs

Part Number Output Current (A) Power Supply Voltage(V) Package Remarks Page
SPI-6631M 3.0 13 to 33 HSOP16Pin Predrive+Power 132
High Voltage 3 Phase Motor Driver ICs

Breakdoun Output Ron/Vsat Package Main Source Protection Circuits*
Part Number Current Package Terminal Main Application Remarks Page
Voltage (A) (typ) Type Switch Number UVLO THD TSD OCP STP
SX68001M 1.25Ω SOP27pin Surface-mount MOS 1 Fan Motor Built-in a 7.5V regulator output 134
SMA6821MP 1.4Ω SMA 24pin Full Mold MOS 2 Fan Motor Built-in a 7.5V regulator output 136
250V 2.0
SLA6826M 1.4Ω SLA 24pin With Fin MOS 2 Fan Motor Built-in a 7.5V regulator output 136
SMA6861M 1.4Ω SMA 24pin Full Mold MOS 2 Fan Motor 138
SX68002M 3.2Ω SOP27pin Surface-mount MOS 1 Fan Motor Built-in a 7.5V regulator output 134
1.5
SLA6827M 3.6Ω SLA 24pin With Fin MOS 2 Fan Motor Built-in a 7.5V regulator output 136
SX68003M 500V 2.0Ω SOP27pin Surface-mount MOS 1 Fan Motor Built-in a 7.5V regulator output 134
SLA6828M 2.5 2.0Ω SLA 24pin With Fin MOS 2 Fan Motor Built-in a 7.5V regulator output 136
SLA6868M 2.0Ω SLA 24pin With Fin MOS 2 Fan Motor, Dishwaher Pump 138
SLA6805MP 1.75V SLA 23pin With Fin IGBT 2 Compressor for Refridgerator, Pump 140
3.0
SLA6845M 1.75V SLA 24pin With Fin IGBT 3 Washing Machine Fan 3 shunt, Built-in a 7.5V regulator output 142
SCM1103M 5.0 1.7V SCM Full Mold IGBT 3 Compressor for Refridgerator 3 shunt 144
SCM1104M 1.75V SCM Full Mold IGBT 3 Compressor for Air-conditioner, Washing Machine Drum 3 shunt 144
8.0
SCM1104MF 1.75V SCM With Fin IGBT 3 Compressor for Air-conditioner, Washing Machine Drum 3 shunt 144
600V
10
15
* : UVLO..... Under Voltage Lock OUT
THD ..... Thermal Detect
TSD ..... Thermal Shut Down
OCP ..... Over Current Protection
STP ..... Shoot Through Prevention
98 ICs
1-2 Motor Driver ICs
Application Note
■ Setup Precautions ■ Handling Precautions
●Recommended mounting torque When using the following products that use C-MOS circuits for input
0.588 to 0.784 [N•m](6.0 to 8.0 [kgf•cm]) terminals, observe the following.
●Recommended silicone grease SMA7036M/SLA7031M/SLA7032M/SLA7033M
Shin-Etsu Chemical Co., Ltd.: G746 SLA7050M/SLA7051M/SLA7052M
Momentive Performance Materials Inc.: YG-6260 SLA7060M/SLA7061M/SLA7062M
Dow Corning Toray Silicone Co., Ltd.: SC102 SLA7065M/SLA7066M/SLA7067M
Please select proper silicone grease carefully since the oil in some SLA7070MR/SLA7071MR/SLA7072MR/SLA7073MR
grease products may penetrate the device and result in an extremely SLA7070MPR/SLA7071MPR/SLA7072MPR/SLA7073MPR
short device life. SLA7075MR/SLA7076MR/SLA7077MR/SLA7078MR
SLA7075MPR/SLA7076MPR/SLA7077MPR/SLA7078MPR
SLA7080MR/SLA7081MR/SLA7082MR/SLA7083MR
SLA7080MPR/SLA7081MPR/SLA7082MPR/SLA7083MPR
SMA6800M Series
SLA6800M Series
SCM1100M Series
●Carefully control the humidity of the room to prevent the buildup of static
electricity. Since static electricity is particularly a problem during the
winter, be sure to take sufficient precautions.
Take care to make sure that static electricity is not applied to the IC
during wiring and assembly. Take precautions such as shorting the
terminals of the printed circuit board to ensure that they are at the same
electrical potential.
ICs 99
1-2-1 2-Phase Stepper Motor Unipolar Driver ICs
SLA7022MU/SLA7029M/SMA7022MU/SMA7029M 2-Phase Excitation
■Absolute Maximum Ratings (Ta=25°C)

Ratings
SLA7022MU SLA7029M SMA7022MU SMA7029M
Motor Supply Voltage VCC 46 V
FET Drain-Source Voltage VDSS 100 V
Control Supply Voltage VS 46 V
TTL Input Voltage VIN 7 V
Reference Voltage VREF 2 V
Output Current IO 1 1.5 1 1.5 A
PD1 4.5 (Without Heatsink) 4.0 (Without Heatsink) W
Power Dissipation
PD2 35 (TC=25°C) 28 (TC=25°C) W
Channel Temperature Tch +150 °C

Ratings
Parameter Symbol SLA7022MU SLA7029M SMA7022MU SMA7029M Unit
IS 10 15 10 15 10 15 10 15
Control Supply Current mA
Condition VS=44V VS=44V VS=44V VS=44V
Control Supply Voltage VS 10 24 44 10 24 44 10 24 44 10 24 44 V
VDSS 100 100 100 100
FET Drain-Source Voltage V
Condition VS=44V, IDSS=250µA VS=44V, IDSS=250µA VS=44V, IDSS=250µA VS=44V, IDSS=250µA
VDS 0.85 0.6 0.85 0.6
FET ON Voltage V
Condition ID=1A, VS=14V ID=1A, VS=14V ID=1A, VS=14V ID=1A, VS=14V
IDSS 4 4 4 4
FET Drain Leakage Current mA
Condition VDSS=100V, VS=44V VDSS=100V, VS=44V VDSS=100V, VS=44V VDSS=100V, VS=44V
DC Characteristics
VSD 1.2 1.1 1.2 1.1

FET Diode Forward Voltage V
Condition ID=1A ID=1A ID=1A ID=1A
IIH 40 40 40 40
µA
Condition VIH=2.4V, VS=44V VIH=2.4V, VS=44V VIH=2.4V, VS=44V VIH=2.4V, VS=44V
TTL Input Current
IIL –0.8 –0.8 –0.8 –0.8
mA
Condition VIL=0.4V, VS=44V VIL=0.4V, VS=44V VIL=0.4V, VS=44V VIL=0.4V, VS=44V
VIH 2 2 2 2
TTL Input Voltage (Active High) V
VIL 0.8 0.8 0.8 0.8
Condition VDSS=100V VDSS=100V VDSS=100V VDSS=100V
VIH 2 2 2 2
Condition VDSS=100V VDSS=100V VDSS=100V VDSS=100V
TTL Input Voltage (Active Low) V
VIL 0.8 0.8 0.8 0.8
AC Characteristics
Tr 0.5 0.5 0.5 0.5

Condition VS=24V, ID=0.8A VS=24V, ID=1A VS=24V, ID=0.8A VS=24V, ID=1A
Tstg 0.7 0.7 0.7 0.7
Switching Time µs
Tf 0.1 0.1 0.1 0.1
100 ICs
SLA7022MU/SLA7029M/SMA7022MU/SMA7029M
■Internal Block Diagram
6 1 5 8 14 10 15
INA
INB
VS
Reg Reg
1, 6, 10, 15pin
Description of pins
Excitation input signal
Active H Active L
+ + 1pin OUT A OUT A
+ +
– – 6pin OUT A OUT A
– –
10pin OUT B OUT B
15pin OUT B OUT B
GNDA
GNDB
REFB
REFA
RSA
RSB
TDA
7 2 3 4 12 13 TDB
11 9
■Typical Connection Diagram (Recommended component values)
VCC (46V max) Excitation signal time chart

2-phase excitation
+
clock 0 1 2 3 0 1
INA H H L L H H
INB L H H L L H
Vb (5V)
8 1 6 10 15
VS 1-2 phase excitation
r3 r4 r1 INA
5
INA
clock 0 1 2 3 4 5 6 7 0 1 2 3
2
TdA INA H H H H L L L L H H H H
14
TdB INB INB
11 tdA L L L H L L L H L L L H
C1 C2
r2 INB L L H H H H L L L L H H
RSA REFA REFB RSB GA GB
7 3 13 9 4 12 tdB L H L L L H L L L H L L
Rs
C3 C4
Rs
●tdA and tdB are signals before the inverter
r5 r6 stage.
Open r1 : 510Ω C1 : 330 to 500pF
collector r2 : 100Ω (VR) C2 : 330 to 500pF
r3 : 47kΩ C3 : 2200pF
r4 : 47kΩ C4 : 2200pF
tdA tdB r5 : 2.4kΩ Rs : 1.8Ω typ (7022MU)
(1~2W)
r6 : 2.4kΩ 1Ω typ (7029M)
■External Dimensions (ZIP15 with Fin [SLA15Pin] /ZIP15[SMA15Pin]) (Unit:mm)
SLA7022MU/SLA7029M SMA7022MU/SMA7029MA
31±0.2 Epoxy resin package
φ 3.2 ±0.15 Epoxy resin package
24.4±0.2 φ 3.2 ±0.15×3.8 4.8±0.2
16.4±0.2 1.7±0.1 4±0.2
31±0.2
2.5 ±0.2
16 ±0.2
13 ±0.2
10.2±0.2
30°
9.9 ±0.2
3 ±0.6
Part No.
4.6±0.6
2.45±0.2
(4.6)
8.5max
Lot No.
1.45 ±0.15
3±0.6
Lot No. Part No.

6.7 ±0.5
6.7±0.5
9.7 –0.5
(9.7)
+1
R-End +0.2 0.62±0.1

1.2±0.1
1.6 ±0.6
+0.2
0.55 –0.1
0.65 –0.1
1.6±0.6
+0.2
0.55 –0.1
2.2±0.4 1.16±0.15
(3)
(3)
+0.2
+0.2 +0.2 1.15 –0.1 +0.2 (5.9)
0.65 –0.1 1.15 –0.1 +0.2
0.55 –0.1 6.3±0.6 0.65 –0.1 +0.2
0.55 –0.1
1.16 +0.2 (7.5)
4±0.7 7.5±0.6 –0.1
4 ±0.7 P2.03±0.1×14=28.42
14×P2.03±0.4=28.42±0.8
14×P2.03 ±0.7=28.42 ±1.0 P2.03±0.1×14=28.42
31.3±0.2 31.3 +0.2
12 3 . . . . . . . 15
123 . . . . . . . 15
1 2 3 . . . . . . . 15 12 3 . . . . . . . 15
Forming No. No.853 Forming No. No.855 Forming No. No.1054 Forming No. No.1055
Product Mass : Approx.6g Product Mass : Approx.4g
ICs 101
SMA7036M 2-Phase Excitation

TTL Input Voltage VIN –0.3 to +7 V
SYNC Terminal Voltage VSYNC –0.3 to +7 V
Reference Voltage VREF –0.3 to +7 V
Sense Voltage VRS –5 to +7 V
Output Current IO 1.5 A
PD1 4.0 (Ta=25°C) W
Power Dissipation
PD2 28 (Tc=25°C) W
Channel Temperature Tch 150 °C
Operating Ambient Temperature Ta –20 to +85 °C
Ratings
min. typ. max.
IS 10 15
Condition VS=44V
Control Supply Voltage VS 10 24 44 V
VDSS 100
Condition VS=44V, IDSS=250µA
VDS 0.6
FET ON Voltage V
Condition ID=1A, VS=10V
VSD 1.1
Condition ISD=1A
IDSS 250
FET Drain Leakage Current µA
Condition VDSS=100V, VS=44V
VIH 2
Condition ID=1A
Active H V
VIL 0.8
Condition VDSS=100V
VIH 2
DC Characteristics
IN Terminal
Condition VDSS=100V
Active L V
VIL 0.8
Condition ID=1A
Input II ±1
Current µA
Condition VS=44V, VI=0 or 5V
VSYNCH 4.0
Input Condition Synchronous chopping mode
V
Loltage VSYNCL 0.8
Condition Asynchronous chopping mode
SYNC Terminal
ISYNCH 0.1
Input Condition VS=44V, VYS=5V
Current mA
ISYNCL –0.1
Condition VS=44V, VYS=0V
VREF 0 2.0
Input Condition Reference voltage input
Voltage V
VREF 4.0 5.5
Condition Output FET OFF
REF Terminal
Input IREF ±1
Current µA
Condition No synchronous trigger
Internal RREF 40
Resistance Ω
Condition Resistance between GND and REF terminal at synchronous trigger
Ton 1.5
Condition VS=24V, ID=1A
AC Characteristics
Tr 0.5
Switching Time µs
Tstg 0.9
Tf 0.1
TOFF 12
Chopping OFF Time µs
Condition VS=24V
102 ICs
SMA7036M
1 6 5 8 14 10 15
IN A
IN B
Vs
1, 6, 10, 15pin
Description of pins
Reg. Reg. Excitation input signal
Active H Active L
Chopping noise Chopping noise 1pin OUT A OUT A
Oscillator blanking timer blanking timer Oscillator 6pin OUT A OUT A
(5 µ s typ) (5 µ s typ) 10pin OUT B OUT B
MOSFET MOSFET 15pin OUT B OUT B
gate drive Chopping + + Chopping gate drive
OFF timer OFF timer
circuit (12 µ s typ) – – (12 µ s typ) circuit
Synchronous Synchronous
chopping chopping
circuit circuit
SYNC B
SYNC A
REF B
REF A
GND B
GND A
Rs B
Rs A
7 2 4 3 13 12 11 9
Vcc (46V max)
Excitation signal time chart

2-phase excitation
8 1 6 10 15
VS
clock 0 1 2 3 0 1
2 INA 5 INA
SyncA INA H H L L H H
SMA7036M INB L H H L L H
Vb (5V)
11 SyncB INB 14 INB r1 : 8kΩ
PchMOS r1
RsA RefA RefB RsB GA GB r2 : 2kΩ (VR)
7 3 13 9 4 12 R S (1 to 2W) : 1Ω typ
PchMOS : HN1J02FU (Toshiba)
Rs Rs
r2 Inv : 7404
Inv
Disable (High Active)
■External Dimensions (ZIP15 [SMA15Pin]) (Unit : mm)
4±0.2 Epoxy resin package

31±0.2
2.5 ±0.2
10.2±0.2
30°
3 ±0.6
(4.6)
8.5max
Lot No.
1.45 ±0.15
Part No.
6.7 ±0.5
(9.7)
0.62±0.1
1.2±0.1
1.6 ±0.6
+0.2
0.55 –0.1
1.16±0.15
(3)
+0.2 (5.9)
0.65 –0.1 +0.2
0.55 –0.1
1.16 +0.2 (7.5)
–0.1
4 ±0.7 P2.03±0.1×14=28.42
P2.03±0.1×14=28.42
31.3 +0.2
1 2 3 . . . . . . . . 15
12 3 . . . . . . . 15
Forming No. No.1054 Forming No. No.1055
Product Mass : Approx.4g
ICs 103
SLA7027MU/SLA7024M/SLA7026M 2-Phase/1-2 Phase Excitation

Ratings
SLA7027MU SLA7024M SLA7026M
Input Voltage VIN 7 V
Reference Voltage VREF 2 V
Output Current IO 1 1.5 3 A
PD1 4.5 (Without Heatsink) W
Power Dissipation
PD2 35 (TC=25°C) W
Ratings
Parameter Symbol SLA7027MU SLA7024M SLA7026M Unit
IS 10 15 10 15 10 15
Condition VS=44V VS=44V VS=44V
Control Supply Voltage VS 10 24 44 10 24 44 10 24 44 V
VDSS 100 100 100
Condition VS=44V, IDSS=250µA VS=44V, IDSS=250µA VS=44V, IDSS=250µA
VDS 0.85 0.6 0.85
FET ON Voltage V
Condition ID=1A, VS=14V ID=1A, VS=14V ID=3A, VS=14V
IDSS 4 4 4
Condition VDSS=100V, VS=44V VDSS=100V, VS=44V VDSS=100V, VS=44V
DC characteristics
VSD 1.2 1.1 2.3

Condition ID=1A ID=1A ID=3A
IIH 40 40 40
µA
Condition VIH=2.4V, VS=44V VIH=2.4V, VS=44V VIH=2.4V, VS=44V
TTL Input Current
IIL –0.8 –0.8 –0.8
mA
Condition VIL=0.4V, VS=44V VIL=0.4V, VS=44V VIL=0.4V, VS=44V
VIH 2 2 2
TTL Input Voltage Condition ID=1A ID=1A ID=3A
V
(Active High) VIL 0.8 0.8 0.8
Condition VDSS=100V VDSS=100V VDSS=100V
VIH 2 2 2
TTL Input Voltage Condition VDSS=100V VDSS=100V VDSS=100V
V
(Active Low) VIL 0.8 0.8 0.8
Tr 0.5 0.5 0.5
AC characteristics
Condition VS=24V, ID=0.8A VS=24V, ID=1A VS=24V, ID=1A

Tstg 0.7 0.7 0.7
Switching Time µs
Tf 0.1 0.1 0.1
104 ICs
SLA7027MU/SLA7024M/SLA7026M
8 1 6 5 7 12 17 16 18 11
IN B
IN B
IN A
IN A
VSA
VSB
1, 8, 11, 18pin
Reg Reg
Description of pins
Excitation input signal
Active H Active L
+ +
Pin 1 OUTA OUTA
– + + –
– –
Pin 8 OUTA OUTA
Pin 11 OUTB OUTB
Pin 18 OUTB OUTB
REFA
REFB
RSA
RSB
TDA
TDB
GA
9 4 2 3 14 13 15 GB 10
Active High Excitation signal time chart

VCC (46V max) 2-phase excitation
+ clock 0 1 2 3 0 1 r1 510Ω
:
INA H L L H H L r2 100Ω (VR)
:
INA L H H L L H r3 : 47kΩ
Vb (5V)
7 12 8 1 18 11
INB H H L L H H r4 : 47kΩ
VSA VSB OUTA OUTA OUTB OUTB
r3 r4 r1 6 r5 : 2.4kΩ
SLA7024M
INA INA
INB L L H H L L r6 : 2.4kΩ
5
2 INA INA Active
TdA 7026M
TdB INB
17
INB
High C1 : 470pF
C1 C2
13 7027MU 16 1-2 phase excitation C2 : 470pF
INB INB
r2 RSA REFA REFB RSB
9 3 14 10
GA
4
GB
15 clock 0 1 2 3 4 5 6 7 0 1 2 3 C3 : 2200pF
C3 C4 C4 : 2200pF
r5 r6 IN A H H L L L L L H H H L L Rs : 1Ω typ (7024M)
Rs Rs
IN A L L L H H H L L L L L H (1 to 2W)
0.68Ω typ (7026M)
IN B L H H H L L L L L H H H 1.8Ω typ (7027MU)
IN B L L L L L H H H L L L L
Active Low Excitation signal time chart

2-phase excitation
VCC (46V max)
clock 0 1 2 3 0 1 r1 : 510Ω
+
INA L H H L L H r2 : 100Ω (VR)
INA H L L H H L r3 : 47kΩ
Vb (5V) INB L L H H L L r4 : 47kΩ
7 12 8 1 18 11
VSA VSB OUTA OUTA OUTB OUTB
r5 : 2.4kΩ
r3 r4 r1 6 INB H H L L H H r6 : 2.4kΩ
INA INA
SLA7024M
2 TdA INA
5
INA Active C1 : 470pF
7026M 17 Low 1-2 phase excitation
13
TdB
7027MU
INB INB C2 : 470pF
C1 C2 16
RSA REFA REFB RSB GA
INB
GB
INB
clock 0 1 2 3 4 5 6 7 0 1 2 3 C3 : 2200pF
r2
9 3 14 10 4 15 C4 : 2200pF
C3 C4 INA L L H H H H H L L L H H Rs : 1Ω typ (7024M)
r5 r6 INA H H H L L L H H H H H L (1 to 2W)
Rs Rs 0.68Ω typ (7026M)
INB H L L L H H H H H L L L 1.8Ω typ (7027MU)
INB H H H H H L L L H H H H
■External Dimensions (ZIP18 with Fin [SLA18Pin]) (Unit : mm)
31±0.2
φ 3.2±0.15 24.4±0.2 φ 3.2±0.15×3.8 4.8 ±0.2
16.4±0.2 1.7±0.1
16 ±0.2
13 ±0.2
9.9 ±0.2
4.6 ±0.6
Part No. 2.45±0.2

3 ±0.6
Lot No.
6.7±0.5
9.7 –0.5
+1
R-End
+0.2
2.2±0.6
+0.2
+0.2
0.55 –0.1
1.6 ±0.6
0.65 –0.1 1 –0.1

(3)
6±0.6
+0.2 +0.2 +0.2
0.65 –0.1 1 –0.1 0.55 –0.1
7.5±0.6
4±0.7
17×P1.68±0.4=28.56±1
17×P1.68±0.4=28.56±1
31.3±0.2
1 2 3 . . . . . . . 18 123 . . . . . . . 18
ICs 105
SLA7031M/SLA7032M/SLA7033M 2-Phase/1-2 Phase Excitation

Ratings
SLA7031M SLA7032M SLA7033M
VIN – 0.3 to +7
Input Voltage V
VSYNC – 0.3 to +7
Reference Voltage VREF – 0.3 to +7 V
Sense Voltage VRS – 5 to +7 V
Output Current IO 1 1.5 3 A
PD1 4.5(Without Heatsink) W
Power Dissipation
PD2 35(Tc=25°C) W
Operating Ambient Temperature Ta – 20 to+85 °C
Storage Temperature Tstg – 40 to +150 °C

Ratings
min. max.
Motor Supply Voltage VM 44 V
Control Supply Voltage VS 10 44 V
VREF 0.1 1.0 V The control current precision is degraded at 0.1V or lower.
REF Input Voltage
VREF(dis) 4.0 5.5 V Output MOS FET OFF
Case Temperature TC 100 °C Temperature of 4(15)-Pin Lead(without heatsink)
Ratings
Parameter Symbol SLA7031M SLA7032M SLA7033M Unit
IS 10 15 10 15 10 15
Control Supply Voltage VS 10 24 44 10 24 44 10 24 44 V
VDSS 100 100 100
Condition VS=44V, IDSS=250µA VS=44V, IDSS=250µA VS=44V, IDSS=250µA
VDS 0.85 0.6 0.85
FET ON Voltage V
Condition ID=1A, VS=10V ID=1A, VS=14V ID=3A, VS=14V
VSD 1.2 1.1 2.3
Condition ISD=1A ISD=1A ISD=3A
IDSS 250 250 250
FET Drain Leakage Current µA
Condition VDSS=100V, VS=44V VDSS=100V, VS=44V VDSS=100V, VS=44V
VIH 2.0 2.0 2.0
Input Voltage Condition ID=1A ID=1A ID=3A
V
(Active High) VIL 0.8 0.8 0.8
Condition VDSS=100V VDSS=100V VDSS=100V
VIH 2.0 2.0 2.0
DC characteristics
IN Terminal
Input Voltage Condition VDSS=100V VDSS=100V VDSS=100V
V
(Active Low) VIL 0.8 0.8 0.8
II ±1 ±1 ±1
Input Current µA
Condition VS=44V, VI=0 or 5V VS=44V, VI=0 or 5V VS=44V, VI=0 or 5V
VSYNC 4.0 4.0 4.0
Condition Synchronous chopping mode Synchronous chopping mode Synchronous chopping mode
Input Voltage V
VSYNC 0.8 0.8 0.8
Condition Asynchronous chopping mode Asynchronous chopping mode Asynchronous chopping mode
SYNC Terminal
ISYNC 0.1 0.1 0.1
Condition VS=44V, VSYNC=5V VS=44V, VSYNC=5V VS=44V, VSYNC=5V
Input Current mA
ISYNC –0.1 –0.1 –0.1
Condition VS=44V, VSYNC=0V VS=44V, VSYNC=0V VS=44V, VSYNC=0V
VREF 0 2.0 0 2.0 0 2.0
Condition Reference Voltage input Reference Voltage input Reference Voltage input
Input Current V
VREF 4.0 5.5 4.0 5.5 4.0 5.5
Condition Output FET OFF Output FET OFF Output FET OFF
REF Terminal
IREF ±1 ±1 ±1
Input Current µA
Condition No synchronous trigger No synchronous trigger No synchronous trigger
Internal RREF 40 40 40
Ω
Resistance Condition Resistance between GND and REF terminal at synchronous trigger Resistance between GND and REF terminal at synchronous trigger Resistance between GND and REF terminal at synchronous trigger
Sense Voltage VRS VREF VREF VREF V
Tr 0.5 0.5 0.5
AC characteristics
Tstg 0.7 0.7 0.7

Switching Time µs
Tf 0.1 0.1 0.1
TOFF 12 12 12
106 ICs
SLA7031M/SLA7032M/SLA7033M
1 8 6 5 7 12 17 16 11 18
Vs A
Vs B
IN B
IN B
IN A
IN A
Reg. Reg.
1,8,11,18pin
Description of pins
Chopping noise Chopping noise
Oscillator blanking timer blanking timer Oscillator Excitation input signal
(5 µs typ) (5 µs typ) Active H Active L
MOSFET Chopping Chopping MOSFET 1pin OUT A OUT A
gate drive OFF timer + + OFF timer gate drive
circuit (12 µ s typ) (12 µ s typ) circuit 8pin OUT A OUT A
– –
Synchronous Synchronous
11pin OUT B OUT B
chopping chopping 18pin OUT B OUT B
circuit circuit
SYNC B
SYNC A
REF A
REF B
Rs B
Rs A
GB
GA
9 2 4 3 14 15 13 10
Active High
Vcc (46Vmax)
+
2-phase excitation 1-2 phase excitation
7 12 8 1 18 11
VsA VsB OUTA OUTA OUTB OUTB clock 0 1 2 3 0 1 clock 0 1 2 3 4 5 6 7 0 1 2 3
INA 6 IN A H L L H H L
2
SYNC A
INA INA H H L L L L L H H H L L
SLA7031M INA 5 INA
Vb (5V)
13
SLA7032M
INB 17
Active
High
IN A L H H L L H INA L L L H H H L L L L L H
SYNC B SLA7033M INB
INB 16 INB IN B H H L L H H INB L H H H L L L L L H H H
r1 RsA REFA REFB RsB GA GB IN B L L H H L L INB L L L L L H H H L L L L
9 3 14 10 4 15
Rs Rs
r1 : 4kΩ
r2 r2 : 1kΩ (VR)
R s : 1Ω typ (7031M/7032M)
(1 to 2W)
0.68Ω typ (7033M)
Active Low
Vcc (46Vmax)
2-phase excitation 1-2 phase excitation
+
clock 0 1 2 3 0 1 clock 0 1 2 3 4 5 6 7 0 1 2 3
7 12 8 1 18 11 IN A L H H L L H INA L L H H H H H L L L H H
VsA VsB OUTA OUTA OUTB OUTB
IN A H L L H H L INA H H H L L L H H H H H L
INA 6 INA
2
SYNC A
SLA7031M INA 5 INA
IN B L L H H L L INB H L L L H H H H H L L L
Active
Vb (5V) SLA7032M
INB 17 Low
13
SYNC B SLA7033M INB IN B H H L L H H INB H H H H H L L L H H H H
INB 16 INB
r1 RsA REFA REFB RsB GA GB

r1 : 4kΩ
9 3 14 10 4 15 r2 : 1kΩ (VR)
Rs Rs
R s : 1Ω typ (7031M/7032M)
(1 to 2W)
r2 0.68Ω typ (7033M)
31±0.2
φ 3.2±0.15 24.4±0.2 φ 3.2±0.15×3.8 4.8 ±0.2
16.4±0.2 1.7±0.1
16 ±0.2
13 ±0.2
9.9 ±0.2
Part No.
4.6 ±0.6
2.45±0.2
3 ±0.6
Lot No.
6.7±0.5
9.7 –0.5
+1
R-End
+0.2
2.2±0.6
+0.2
+0.2
0.55 –0.1
1.6 ±0.6
0.65 –0.1 1 –0.1

(3)
6±0.6
+0.2 +0.2 +0.2
0.65 –0.1 1 –0.1 0.55 –0.1
7.5±0.6
4±0.7
17×P1.68±0.4=28.56±1
17×P1.68±0.4=28.56±1
31.3±0.2
1 2 3 . . . . . . . 18
123 . . . . . . . 18
ICs 107
SLA7050M/SLA7051M/SLA7052M 2-Phase/1-2 Phase Excitation, Built-in Sequencer

Ratings
Load Supply Voltage VS 46 V
Logic Supply Voltage VCC 6 V
Output Current IO 1 2 3 A
Logic Input Voltage VIN –0.3 to VCC+0.3 V
REF Input Voltage VREF –0.3 to VCC+0.3 V
Sense Voltage VRS –2 to +2 V
PD1 4 (Without Heatsink) W
Power Dissipation
PD2 20 (TC=25°C) W

Ratings
min. max.
Load Supply Voltage VS 10 44 V
Logic Supply Voltage VCC 3.0 5.5 V The VCC surge voltage should be 0.5V or lower.
REF Input Voltage VREF 0.1 1.0 V The control current precision is degraded at 0.1V or lower.
Case Temperature TC 100 °C Temperature at pin-10 Lead (Without heatsink)
■Electrical Characteristics (VCC = 5V, VS = 24V, Ta = 25°C, unless otherwise specified)

Ratings
ISS 15 15 15
mA
Conditions Normal operation Normal operation Normal operation
Main Supply Current
IS 100 100 100
µA
Conditions Sleep mode Sleep mode Sleep mode
Logic Supply Current ICC 3 3 3 mA
Output MOSFET Breakdown VDSS 100 100 100
V
Voltage Conditions VS=44V, IDSS=1mA VS=44V, IDSS=1mA VS=44V, IDSS=1mA
RDS (ON) 0.85 0.5 0.27
Output MOSFET ON Resistance Ω
Conditions ID=1A ID=1A ID=3A
Output MOSFET Diode Forward VSD 1.2 1.1 2.3
V
Voltage Conditions ISD=1A ISD=1A ISD=3A
Maximum Clock Frequency Fclock 100 100 100 kHz
VIL VCC·0.25 VCC·0.25 VCC·0.25
Logic Input Voltage V
VIH VCC·0.75 VCC·0.75 VCC·0.75
IIL ±1 ±1 ±1
Logic Input Current µA
IIH ±1 ±1 ±1
VREF 0 1.5 0 1.5 0 1.5
Conditions Normal-operation current control Normal-operation current control Normal-operation current control
REF Input Voltage V
VREFS 2 VCC 2 VCC 2 VCC
Conditions Output OFF (sleep) Output OFF (sleep) Output OFF (sleep)
REF Input Current IREF ±10 ±10 ±10 µA
Sense Voltage VRS VREF VREF VREF V
PWM OFF Time TOFF 12 12 12 µS
PWM Minimum ON Time TON (min) 5 5 5
µS
TSE 100 100 100
Sleep - Enable Recovery Time
Conditions VREF : 2.0→1.5V, IO : 0.75A VREF : 2.0→1.5V, IO : 1.5A VREF : 2.0→1.5V, IO : 2.0A µS
TONC 2.5 2.5 2.5
Conditions Clock→Out Clock→Out Clock→Out
Switching Time µS
TOFFC 2.0 2.0 2.0
Conditions Clock→Out Clock→Out Clock→Out
108 ICs
■Internal Block Diagram and Pin Assignment
CW/CCW
Full/Half
OutA/
OutB/
Clock
OutA
OutB
Pin No. Symbol Function
Vcc
NC
GA
GB
NC
Vs
1 OutA Phase A output
1 2 3 4 11 12 14 7 5 15 16 17 18
MIC 2 NC No Connection
Reg
3 OutA/ Phase A output
GA GB
4 GA No Connection
Sequencer
GA/ GB/ 5 VCC Logic supply
OSC OSC
6 SenseA Phase A current sense
PWM Synchro PWM
Control Control Control 7 Clock Step Clock input
8 Sync Synchronous PWM control signal input
Sleep
Circuit 9 Ref Control current setting & output OFF
10 GND Device GND
6 9 8 10 13
11 CW/CCW Normal/reverse control input
SenseA
REF
Sync
GND
SenseB 12 Full/Half Full/Half Step control input

13 SenseB Phase B current sense
Truth Table 14 VS Load supply (motor supply)
15 GB No Connection
L H
16 OutB/ Phase B output
CW/CCW CW CCW
17 NC No Connection
Full/Half Full Half
18 OutB Phase B output
REF Enable Disable
Sync Asynchronous Synchronous
Clock
* REF terminal turns into normal operation at VREF < 1.5V.

The output is disabled (Output OFF) at VREF > 2V.
.
Vs=10~44V Rs=0.1 to 2Ω (Power dissipation should be: P=.IO2 × RS)
CA R1=10kΩ CA=100µF/50V
R2=5.1kΩ (VR) CB=10µF/10V
OutA/
OutB/
OutA
OutB
NC
GA
GB
NC
Vs
1 3 2 4 14 15 17 16 18 Q1:T.B.D
Vcc=3.0~5.5V 5
Vcc
Disable
r1 * VCC line noise precaution:
Q1
CB
7
SLA7050M The device may malfunction if the VCC line noise exceeds 0.5V.
Clock
Micro- 11 CW/CCW
SLA7051M * Be sure to connect the unused logic input terminals (CW/CCW, F/H, Sync) to VCC
computer,
etc.
12 Full/Half SLA7052M or GND. If they are open, the device will malfunction.
8 Sync
9 REF
* GND pattern precaution:
6 13
Separating the VCC system GND (S-GND) and VS system GND (P-GND) from the
SenseA
GND
SenseB
10
r2 device GND (10-Pin) helps to reduce noise.
RsA RsB
P-GND
S-GND
31±0.2
φ 3.2±0.15 24.4±0.2 φ 3.2±0.15×3.8 4.8 ±0.2
16.4±0.2 1.7±0.1
16 ±0.2
13 ±0.2
9.9 ±0.2
4.6 ±0.6
Part Number 2.45±0.2

3 ±0.6
Lot No.
6.7±0.5
9.7 –0.5
+1
R-End
+0.2
2.2±0.6
+0.2
+0.2
0.55 –0.1
1.6 ±0.6
0.65 –0.1 1 –0.1

(3)
6±0.6
+0.2 +0.2 +0.2
0.65 –0.1 1 –0.1 0.55 –0.1
7.5±0.6
4±0.7
17×P1.68±0.4=28.56±1
17×P1.68±0.4=28.56±1
31.3±0.2
1 2 3 . . . . . . . 18 123 . . . . . . . 18

ICs 109
SLA7070MR, MPR/7071MR, MPR/7072MR, MPR/7073MR, MPR 2-Phase/1-2 Phase Excitation Support, Built-in Sequencer

• Lineup of built-in current sense resistor and Parameter Symbol Ratings Unit Remarks
built-in protection circuit-type Motor Supply Voltage VM 46 V
• Power supply voltages, VBB: 46 V (max), 10 to Driver Supply Voltage VBB 46 V
44 V normal operating range Logic Supply Voltage VDD 6 V
• Logic supply voltages, VDD: 3.0 to 5.5 V Output Current Io *1 A Mode F
• Maximum output currents: 1 A, 1.5 A, 2 A, and Logic Input Voltage VIN –0.3 to VDD+0.3 V
3A REF Input Voltage VREF –0.3 to VDD+0.3 V
• Built-in sequencer Sense Voltage VRS ±2 V Excluding tw<1µs
• Self-excitation PWM current control with fixed Power Dissipation 4.7 When Ta = 25°C
PD W
off-time 17 When Tc = 25°C
• Synchronous PWM chopping function prevents Junction Temperature Tj +150 °C
motor noise in Hold mode Operating Ambient Temperature Ta –20 to +85 °C
• Sleep mode for reducing the IC input current Storage Temperature Tstg –30 to +150 °C
in stand-by state *1: Output current value may be limited for the SLA7070MR, MPR (1.0 A), SLA7071MR, MPR (1.5 A), SLA7072MR, MPR
• ZIP type 23-pin molded package (SLA (2.0 A), and SA7073MR, MPR (3.0 A), depending on the duty ratio, ambient temperature, and heating conditions.
package) Be sure that junction temperature of Tj is not exceeded under any circumstances.

Rating
min. max.
Driver Supply Voltage VS 10 44 V
Logic Supply Voltage VCC 3.0 5.5 V The VCC surge voltage should be 0.5 V or lower
Case Temperature TC 90 °C Temperature at Pin-12 Lead (without heatsink)
Ratings
min. typ. max.
IBB 15 mA In operation
Main Supply Current
IBBS 100 µA Sleep 1 and Sleep 2 modes
Logic Supply Current Icc 5 mA
Output MOSFET Breakdown Voltage V(BR)DSS 100 V VBB=44V, ID=1mA
0.7 0.85 SLA7070M, ID=1.0A
0.45 0.6 SLA7071M, ID=1.5A
Output MOSFET ON Resistance RDS(ON) Ω
0.25 0.4 SLA7072M, ID=2.0A
0.18 0.24 SLA7073M, ID=3.0A
0.85 1.1 SLA7070M, ID=1.0A
1.0 1.25 SLA7071M, ID=1.5A
Output MOSFET Diode Forward Voltage VF V
0.95 1.2 SLA7072M, ID=2.0A
0.95 2.1 SLA7073M, ID=3.0A
Maximum Clock Frequency Fclock 250 kHz When Clock Duty = 50%
VIL 0.25VDD
VIH 0.75VDD
IIL ±1
IIH ±1
0.04 0.3 SLA7070MR/7070MPR, within the current setting range
VREF
REF Input Voltage 0.04 0.4 V SLA7072MR/7072MPR, within the current setting range
VREFS 2 VDD Output (OFF) Sleep 1
REF Input Current IREF ±10 µA
Sense Voltage VSENSE VREF V When step reference current ratio is 100%
Sleep-Enable Recovery Time TSE 100 µS Sleep1&Sleep2
tcon 2.0 µS Clock → Out ON
Switching Time
tcoff 1.5 µS Clock → Out OFF
0.296 0.305 0.314 SLA7070MR/7070MPR, tolerance of ±3%
0.296 0.305 0.314
Ω SLA7071MR/7071MPR, tolerance of ±3%
Sense Resistance RS
Overcurrent Sense Voltage Vocp 0.65 0.7 0.75 V SLA7070MPR/7071MPR/7072MPR/7073MPR, when motor coil shorts out
2.3 SLA7070MPR/7071MPR
Overcurrent Sense Current Iocp 3.5 A SLA7072MPR
4.6 SLA7073MPR
VFlagL 1.25 SLA7070MPR/7071MPR/7072MPR/7073MPR, IFlagL=1.25mA
Flag Output Voltage V
VFlagH 1.25–VDD SLA7070MPR/7071MPR/7072MPR/7073MPR, IFlagH=–1.25mA
IFlagL 1.25
Flag Output Current mA SLA7070MPR/7071MPR/7072MPR/7073MPR
IFlagH –1.25
ModeF 100 %
Step Reference Current Ratio
Mode8 70.7 %
PWM Minimum ON Time ton(min) 3.2 µs
PWM OFF Time toff 12 µs
The direction in which current flows out of the device is regarded as negative.
110 ICs
SLA7070MR, MPR/7071MR, MPR/7072MR, MPR/7073MR, MPR
■Internal Block Diagram ■Pin Assignment

1
OutA Phase A output
2
Ref/Sleep1
CW/CCW
3
Reset
Clock
Phase A output
OutA
OutA
OutA
OutA
OutB
OutB
OutB
OutB
N.C.
OutA/
Flag
VDD
VBB
M1
M2
M3
4
1 2 3 4 14 15 18 6 7 8 9 16 10 15 11 20 21 22 23 5 SenseA Phase A current sense
6 N.C. N.C.
MIC Reg
7 M1
Pre-
8 M2 Excitation mode/Sleep 2 setting input
Pre- Sequencer
Driver &
Driver 9 M3
Sleep Circuit
10 Clock Step Clock input
Protect Protect
11 VBB Driver supply (motor supply)
12 Gnd Device GND
DAC DAC
13 Ref/Sleep1 Control current mode/Sleep 1 setting input
–
Synchro
+
14 VDD Logic supply
5 Control 19
15
–
SenseA + SenseB Reset Internal logic reset input
PWM PWM
Control Control
RS OSC OSC RS
17 Sync PWM control signal input
18 Flag Protection circuit monitor output*1
17 12 19 SenseB Phase B current sense
20
OutB/ Phase B current output
21
22
OutB Phase B current output
23
The protect circuit is deleted and the flag pin is N.C. for SLA7070MR, 7071MR, 7072MR, and 7073MR. *1: N.C. pin for SLA7070MR, 7071MR, 7072MR, and 7073MR.
■Typical Connection Diagram ■External Dimensions (ZIP23 with Fin[SLA23Pin])
Vs=10V to 44V 31±0.2
24.4±0.2 4.6±0.2
16.4±0.2
1.7±0.1
Gate burr
φ 3.2 ±0.15
× 3.8
+
CA
Vcc=3.0V to 5.5V φ 3.2±0.15
OutA OutA BB OutB OutB
16±0.2
C1 VDD
12.9±0.2
r1
Q1 2.45±0.2
9.9±0.2
Reset/Sleep1 5±0.5
(Measured at
Clock the root)
CW/CCW SLA7070MR,MPR
SLA7071MR,MPR 4–(R1)
Micro- M1
9.5 –0.5
computer,
+1
etc.
M2 SLA7072MR,MPR
R-end
M3 SLA7073MR,MPR
Sync
N.C. +0.2
0.65 –0.1 +0.2
0.55 –0.1
(4.3)
Flag
±0.5 ±1
Ref/Sleep 22 × P1.27 = 27.94
SenseA Gnd SenseB 4.5±0.7
31.3±0.2
r2 r3 C2
(Including the resin burr)
One-point
Gnd
Logic Gnd Power Gnd
* There is no Flag pin (Pin-18) for SLA7070MR, 7071MR, 7072MR, and 7073MR.
ICs 111
SLA7080MR, MPR/7081MR, MPR/7082MR, MPR/7083MR, MPR 2-Phase/1-2-Phase Excitation

• Lineup of built-in current sense resistor Parameter Symbol Ratings Unit Conditions
and built-in protection circuit-type Motor Supply Voltage VM 46 V
• Power supply voltages, VBB: 46 V (max), Driver Supply Voltage VBB 46 V
10 to 44 V normal operating range Logic Supply Voltage VDD 6 V
• Logic supply voltages, VDD: 3.0 to 5.5 V Output Current Io *1 A
• Maximum output current Io: 1A, 1.5A, 2A, Logic Input Voltage VIN –0.3 to VDD+0.3 V
and 3A REF Input Voltage VREF –0.3 to VDD+0.3 V
Sense Voltage VRS ±2 V Excluding tw<1µs
• Self-excitation PWM current control with
fixed off time 4.7 When Ta = 25°C
Power Dissipation PD W
17 When Tc = 25°C
• Synchronous PWM chopping function
prevents motor noise in Hold mode
• Sleep mode for reducing the IC input Storage Temperature Tstg –30 to +150 °C
current in stand-by state
*1: Output current value may be limited for the SLA7080MR, MPR (1.0A), SLA7081MR, MPR (1.5A),
• ZIP type 23-pin molded package (SLA SLA7082MR, MPR (2.0A), SLA7083MR, MPR (3.0A), depending on the duty ratio, ambient temperature,
package) and heating conditions.
Do not exceed junction temperature of Tj under any circumstances.

Ratings
min. max.
Driver Supply Voltage VBB 10 44 V
Logic Supply Voltage VDD 3.0 5.5 V The VDD surge voltage should be 0.5V or lower.
0.3 When controlling the current for SLA7080M
REF Input Voltage VREF 0.04 0.45 V When controlling the current for SLA7081M/SLA7083M
0.4 When controlling the current for SLA7082M
Case Temperature Tc 90 °C Rear center (without Fin)
■Electrical Characteristics (VDD=5V, VBB=24V, Ta=25°C, unless otherwise specified)

Ratings
min. typ. max.
Main Supply Current
IBBS 100 µA Sleep Mode
Logic Supply Current IDD 5 mA
0.7 0.85 SLA7080M, ID=1.0A
0.45 0.6 SLA7081M, ID=1.5A
0.25 0.4 SLA7082M, ID=2.0A
0.18 0.24 SLA7083M, ID=3.0A
0.85 1.1 SLA7080M, ID=1.0A
1.0 1.25 SLA7081M, ID=1.5A
0.95 1.2 SLA7082M, ID=2.0A
0.95 2.1 SLA7083M, ID=3.0A
Maximum Clock Frequency Fclk 250 kHz When Duty = 50%
VIL 0.25VDD
VIH 0.75VDD
IIL ±1
IIH ±1
0.04 0.3 SLA7080M
0.04 0.45 SLA7081M
VREF
REF Input Voltage 0.04 0.4 V SLA7082M
0.04 0.45 SLA7083M
VREFS 2.0 VDD Sleep (“IBBS”, “output: OFF”)
Sense Voltage VSENSE VREF–0.03 VREF VREF+0.03 V
0.296 0.305 0.314 Including the resistance due to the product configuration (about 5 mΩ) for SLA7080M
Sense Resistance Rs Ω
PWM Minimum ON Time 3.2 B_SEL: Low
ｔon(min) µs
(blanking time) 5.2 B_SEL: High
PWM OFF Time toff 13 µs
Sleep-Enable Recovery Time TSE 100 µS Sleep
tcon 1.5 µS Phase IN → Out ON
Switching Time
tcoff 1.0 µS Phase IN → Out OFF
Overcurrent Sense Voltage Vocp 0.65 0.7 0.75 V SLA7080MPR/7081MPR/7082MPR/7083MPR, when the motor coil shor ts out
Overcurrent Sense Current
Iocp 3.5 A SLA7082MPR
Vocp÷Rs
4.5 SLA7083MPR
Time Not Sensing Load Disconnection topp 1.5 2.0 2.5 µS SLA7080MPR/7081MPR/7082MPR/7083MPR
Thermal Protection Temperature Ttsd 140 °C SLA7080MPR/7081MPR/7082MPR/7083MPR, rear of case (at the saturation temperature)
VFlagL 1.25 SLA7080MPR/7081MPR/7082MPR/7083MPR, IFlagL= 1.25mA
VFlagH 1.25VDD SLA7080MPR/7081MPR/7082MPR/7083MPR, IFlagH= –1.25mA
IFlagL 1.25
IFlagH –1.25
*The direction in which current flows out of the device is regarded as negative.
112 ICs

1
Out A Phase A output
2
3
/Out A Phase A output
4
5 Sense A Phase A current sense
6 B_SEL Blanking time switching input
7 INA
Phase A switching input
8 /INA
9 INB
Phase B switching input
10 /INB
12 Gnd Device GND
13 Ref/Sleep Control current mode/Sleep setting input
14 VDD Logic supply
15 Gnd1 Gnd1
16 Gnd2 Gnd2
17 Sync PWM synchronous/asynchronous switching input
18 Flag*1 Protection circuit monitor output*1
19 Sense B Phase B current sense
20
/Out B Phase B output
21
22
Out B Phase B output
23
*1: N.C. pin for SLA7080MR, 7081MR,
7082MR, and 7083MR.
* The protect circuit is deleted and the flag pin is N.C. for SLA7080MR, 7081MR, 7082MR, and 7083MR.
* The flag pin is N.C. for SLA7080MR, SLA7081MR, SLA7082MR, and SLA7083MR.
31±0.2
24.4±0.2 φ3.2±0.15×3.8
16.4±0.2 4.6±0.2
1.7±0.1
φ3.2±0.15
16±0.2
12.9±0.2
2.45±0.2
9.9±0.2
(Measured at the root)

5±0.5
4–(R1)
9.5 –0.5
+1
R-end
+0.2
0.65 –0.1
22×P1.27±0.5=27.94±1 +0.2
0.55 –0.1
(4.3)
31.3±0.2
(Including the resin burr) 4.5±0.7
ICs 113
SLA7042M/SLA7044M 2W1-2 Phase Excitation/Micro-step Support

Ratings
SLA7042M SLA7044M
Control Supply Voltage VDD 7 V
Input Voltage VIN –0.5 to VDD+0.5 V
Output Current IO 1.2 3.0 A
Power Dissipation PD 4.5 (Without Heatsink) W
Ratings
Parameter Symbol SLA7042M SLA7044M Unit
IDD 7 7
Conditions VDD=5.5V VDD=5.5V
Control Supply Voltage VDD 4.5 5 5.5 4.5 5 5.5 V
VIH 3.5 5 3.5 5
Conditions VDD=5V VDD=5V
Terminals Input Voltage V
VIL 0 1.5 0 1.5
DATA,
CLOCK
Input Hysteresis VH 1 1
and V
Voltage Conditions VDD=5V VDD=5V
STROBE
II ±1 ±1
Input Current µA
Conditions VDD=5V, VI=0 or 5V VDD=5V, VI=0 or 5V
VREF 0.4 2.5 0.4 2.5
Input Voltage V
REF VDISABLE VDD–1 VDD VDD–1 VDD
Terminal Conditions VDD=5V VDD=5V
IREF ±1 ±1
Input Current µA
Conditions VDD=5V, VI=0 or 5V VDD=5V, VI=0 or 5V
Vref 0 0
DC Characteristics
Conditions MODE 0 MODE 0

Vref 20 20
Vref 40 40
Vref 55.5 55.5
Step Reference Current Ratio %
Vref 71.4 71.4
Vref 83 83
Vref 91 91
Vref 100 100
VDS 0.8 1.4
FET ON Voltage V
Conditions ID=1.2A, VDD=4.75V ID=3.0A, VDD=4.75V
VDSS 100 100
Conditions IDSS=4mA, VDD=5V IDSS=4mA, VDD=5V
IDSS 4 4
Conditions VDSS=100V, VDD=5V VDSS=100V, VDD=5V
VSD 1.2 2.3
Conditions ID=1.2A ID=3A
TOFF 7 7
Conditions MODE 1, 2 MODE 1, 2
TOFF 9 9
Chopper Off Time µs
Conditions MODE 3, 4, 5 MODE 3, 4, 5
TOFF 11 11
Conditions MODE 6, 7 MODE 6, 7
Tr 0.5 0.5
Conditions VDD=5V, ID=1A VDD=5V, ID=1A
Tstg 0.7 0.7
Switching Time µs
AC Characteristics

Tf 0.1 0.1
tsDAT 75 75
Data Setup Time “A”
Conditions Data active time before clock ↓ Data active time before clock ↓
thDAT 75 75
Data Hold Time “B”
Conditions Data active time before clock ↓ Data active time before clock ↓
twDAT 150 150
Data Pulse Time “C”
Conditions
ns
twhCLK 100 100
Clock Pulse Width “D”
Conditions
tpsSTB 100 100
Strobe Stability Time “E”
Conditions Time from clock ↓ to Strobe ↓ Time from clock ↓ to Strobe ↓
twhSTB 100 100
Strobe Pulse H Width “F”
Conditions
114 ICs
SLA7042M/SLA7044M
■Internal Block Diagram ■Serial Data Pattern

OUT excitation (MODE χ ) OUT excitation (MODE χ )
OUT A
OUT A
VDD A
VDD B
OUT B
OUT B
Phase a b c Phase a b c
CLOCK
0 0
STROBE
0 0
Reference voltage Reference voltage
Vref a b c c b a Vref
0% 0 0 0 0 0 0 0% MODE0
20% 1 0 0 0 0 1 20% (0%)
40% 0 1 0 0 1 0 40% 0 0
55.5% 1 1 0 0 1 1 55.5%
71.4% 0 0 1 1 0 0 71.4%
83% 1 0 1 1 0 1 83%
OFF time timer 91% 0 1 1 1 1 0 91% OFF time timer MODE1
(TOFF 3-step switching) 100% 1 1 1 1 1 1 100% (TOFF 3-step switching) (20%)
0 0
Chopper ON Chopper ON
Noise filter Noise filter
PWM (5µs) (5µs) PWM
Phase Phase MODE2
(40%)
COMP COMP
Reset Latch Latch Reset 0 0
Ph. a b c c b a Ph.
MODE3
Reset Shift register Shift register Reset
Ph. a b c c b a Ph. (55.5%)
0 0
DATA
Enable Enable MODE4
(71.4%)
0 0
MODE5
(83%)
0 0
Rs A
GND A
Ref A
CLOCK A
DATA A
STROBE A
STROBE B
DATA B
CLOCK B
Ref B
GND B
Rs B
MODE6
(91%)
0 0
MODE7
(100%) 0 0
Successively output this serial data and set any

current. Then, determine the step
time of the reference voltage Vref with STROBE
signal intervals.
■Diagram of Standard External Circuit ■Output Current Formula

VCC
IO= ⋅
K VREF K:Reference voltage setting ratio by
serial signal (See the internal block
3 RS
diagram)
5V
4 15 1 8 11 18
R1 VDDA VDDB OUT A OUT A OUT B OUT B
CLOCK A 5
ENABLE CLOCK B
16
VREF REF A SLA7042M STROBE A
3 2
REF B SLA7044M STROBE B
14 13
DATA A
R2 C1 6
DATA B
17
GND A GND B RS A RS B
7 12 9 10
RS RS
C1 : 500~10000pF
31±0.2
φ 3.2±0.15 24.4±0.2 φ 3.2±0.15x3.8 4.8±0.2
16.4±0.2 1.7±0.1
9.9±0.2
16±0.2
13±0.2
Part No.
2.45±0.2
±0.6
3 ±0.6
Lot No.
4.6
(3) 6.7±0.5
+0.2
9.7 –0.1
R-End +0.2
0.65 –0.1
±0.6
+0.2
1 –0.1 2.2±0.1
0.55 +0.2
–0.1
1.6
+0.2 +0.2
6±0.6
+0.2
0.65 –0.1 1 –0.1 0.55 –0.1 7.5±0.6
17xP1.68±0.4=28.56±1
4±0.7
17xP1.68±0.4=28.56±1
31.3±0.2
1 2 3 . . . . . . . . . . . . 16 17 18
1 2 3 . . . . . . . . . . . 16 1718
ICs 115
SLA7065M/SLA7066M/SLA7067M 2-Phase to 2W 1-2 Phase Excitation Support, Built-in Sequencer

• Main supply voltage VBB: 46V (max), 10 to Ratings
44V recommended Parameter Symbol Unit
• Logic supply voltage VDD: 3.0 to 5.5V support
• Lineup of output current IO: 1A, 2A, 3A
Driver Supply Voltage VBB 46 V
(maximum set current)
Logic Supply Voltage VDD 7 V
• Supporting the clock-input-method micro-step
drive (built-in sequencer) Output Current IO 1.0 2.0 3.0 A
• 2-phase excitation to 2W 1-2 phase excitation Logic Input Voltage VIN –0.3 to VDD+0.3 V
support REF Input Voltage VREF –0.3 to VDD+0.3 V
• Self-excitation PWM current control method Sense Voltage VRS –2 to +2 (tw >1µs) V
• Built-in synchronous chopping function to Power Dissipation PD 3.5 (Without Heatsink) W
prevent the audible motor noise in the hold Junction Temperature Tj +150 °C
state Operating Ambient Temperature Ta –20 to +85 °C
• ZIP type 21-Pin mold package (SLA package) Storage Temperature Tstg –30 to +150 °C

Ratings
min. max.
Case Temperature TC 90 °C Temperature at pin-11 Lead (Without heatsink)

Ratings
IBB 15 15 15
mA
Conditions In operation In operation In operation
Main Supply Current
IBBS 100 100 100
µA
Logic Supply Current IDD 4 4 4 mA
V (BR) DS 100 100 100
Output MOSFET Breakdown Voltage V
Conditions VBB=44V, ID=1mA VBB=44V, ID=1mA VBB=44V, ID=1mA
RDS (ON) 0.7 0.25 0.18
VF 0.85 0.95 0.95
Output MOSFET Diode Forward Voltage V
Conditions IF=1A IF=2A IF=3A
fclk 250 250 250
Maximum Clock Frequency kHz
Conditions When Clock Duty = 50% When Clock Duty = 50% When Clock Duty = 50%
VIL VDD·0.25 VDD·0.25 VDD·0.25
VIH VDD·0.75 VDD·0.75 VDD·0.75
IIL ±1 ±1 ±1
IIH ±1 ±1 ±1
Conditions Clock, Reset, CW/CCW, Sync Clock, Reset, CW/CCW, Sync Clock, Reset, CW/CCW, Sync
IILM –50 –50 –50
IIH ±1 ±1 ±1
Conditions M1, M2 M1, M2 M1, M2
VREF 0 1.5 0 1.5 0 1.5
REF Input Voltage V
VREFS 2 VDD 2 VDD 2 VDD
VMoL 1.25 1.25 1.25
Conditions IMOL=1.5mA IMOL=1.5mA IMOL=1.5mA
Mo Output Voltage V
VMoH VDD–1.25 VDD–1.25 VDD–1.25
Conditions IMOH=–1.5mA IMOH=–1.5mA IMOH=–1.5mA
IMoL 3 3 3
Mo Output Current mA
IMoH –3 –3 –3
Sense Terminal Inflow Current ISENSE ±10 ±10 ±10 µA
VSENSE 0.95 1.00 1.05 0.95 1.00 1.05 0.95 1.00 1.05
Sense Voltage V
Conditions When VREF = 1V in Mode F When VREF = 1V in Mode F When VREF = 1V in Mode F
Mode F 100 100 100
Mode E 98.1 98.1 98.1
Mode C 92.4 92.4 92.4
Mode A 83.1 83.1 83.1
Mode 8 70.7 70.7 70.7 %
Mode 6 55.5 55.5 55.5
Mode 4 38.2 38.2 38.2
Mode 2 19.5 19.5 19.5
Conditions
.
VREF=.VSENSE=100%, VREF=0.1 to 1.0V
.
.
TONC 2.0 2.0 2.0
Conditions Clock→OutON Clock→OutON Clock→OutON
Switching Time µs
TOFFC 1.5 1.5 1.5
Conditions Clock→OutOFF Clock→OutOFF Clock→OutOFF
TON (min) 1.8 1.8 1.8
µs
Conditions Mode 2 to F Mode 2 to F Mode 2 to F
PWM Minimum ON Time
tOFF1 12 12 12
µs
tOFF2 9 9 9
Conditions Mode 4 to 6 Mode 4 to 6 Mode 4 to 6
tOFF3 7 7 7
Conditions Mode 2 Mode 2 Mode 2
116 ICs

CW/CCW
1
Reset
OutA/
OutA/
OutB/
OutB/
Clock
OutA
OutA
OutB
OutB
OutA Phase A output
REF
VDD
VBB
MO
M1
M2
2
1 2 3 4 7 6 14 13 12 9 10 8 16 18 19 20 21 3
OutA/ Phase A output
MIC 4
Reg 5 SenseA Phase A current sense
Sequencer 6 VDD Logic supply
Pre- & Pre-
Sleep Circuit 7 REF Control current setting & output OFF control input
Driver Driver
8 Reset Internal logic reset input
DAC DAC
–
Synchro –
Control 11 GND Device GND
+ PWM PWM + 12 M2
Control Control Excitation mode setting input
13 M1
OSC OSC
5 17
14 MO 2-phase excitation state monitor output
15 Sync
SenseA GND 11 SenseB
18
OutB/ Phase B output
19
20
OutB Phase B output
21

VBB=VM=10~44V
* VDD line noise precaution:

The device may malfunction if the VDD line noise exceeds 0.5V.
CA
VDD=3.0~5.5V As a countermeasure, separating the VDD system GND (S-GND) and VBB
OutA/
OutB/
OutA
OutB
VBB
Disable R1 C1
system GND (P-GND) from the device GND (Pin-11) helps to reduce noise.
Q1 6 16 1 2 3 4 18 19 20 21
Reset
8
CW/CCW
9 * Be sure to connect the unused logic input terminals (CW/CCW, M1, M2,
CB
Micro-
Clock
10 SLA7060M Reset, Sync) to VDD or GND.
M2
12
computer,
etc.
M1
13
Series Otherwise, the device will malfunction.
MO
14
Sync
15 * Be sure to open the unused logic output terminal Mo.
7 5 11 17
SenseA
SenseB
REF
R2
R3 RsA RsB
GND
S-GND P-GND
Component Values (Typical)

.
Rs=0.1 to 2Ω (Power dissipation should be: P =.IO2×Rs)
R1=10kΩ CA=100µF/50V
R3=10kΩ C1=0.1µF
31.0±0.2 31.0±0.2
24.4±0.2 φ 3.2±0.15×3.8 4.8±0.2 24.4±0.2 φ 3.2±0.15×3.8 4.8±0.2
16.4±0.2 1.7±0.1 16.4±0.2 1.7±0.1
Gate burr Gate burr
[Measured at the tip]
φ 3.2±0.15 φ 3.2±0.15
[Heatsink]
[Heatsink]
16±0.2
16±0.2
12.9±0.2
12.9±0.2
[4.6]
3±0.5
2.45±0.2 2.45±0.2
9.9±0.2
9.9±0.2
17.9±0.6
[Measured at the root] [Measured

5±0.5
at the root]
4 –[R1]
R-end
+0.2
0.55 –0.1
1.6±0.5
0.65 –0.1
+0.2
20×P1.43±0.5=28.6±0.7
+0.2 6±0.6
4.2MIN
0.55 –0.1 [Measured at the tip]

20×P1.43±0.5=28.6±1 4±0.7 7.5±0.6
[Measured at the tip] [Measured at the tip] 31.3±0.2
[Including the resin burr]
31.3±0.2
+0.2
0.65 –0.1
1 3 5 7 9 11 13 15 17 19 21
Forming No. No.2102 1 3 5 7 9 11 13 15 17 19 21
Forming No. No.2104
2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20
ICs 117
SI-7321M 2-Phase to 4W 1-2 Phase Excitation Support, Built-in Sequencer

• Power supply voltages, VBB: 46 V (max), 10 to
44 V normal operating range
• Logic supply voltages, VDD: 3.0 to 5.5 V
Driver Supply Voltage VBB 46 V
• Output Current Io: 1.5A Logic Supply Voltage VDD 6 V
• Clock input method (built-in sequencer) Output Current Io 1.5 A Current ratio: Mode F
• Self-excitation PWM current control with fixed Logic Input Voltage VIN –0.3 to VDD+0.3 V
off time REF Input Voltage VREF –0.3 to VDD+0.3 V
• Synchronous PWM chopping function prevents Sense Voltage VRS ±2 V Excluding tw<1µs
motor noise in Hold mode Power Dissipation PD 3.5 W When Ta = 25°C
• Sleep mode for reducing the IC input current Junction Temperature Tj +150 ℃
in stand-by state Operating Ambient Temperature Ta –20 to +80 ℃
• Selectable blanking time (1.8 us or 3.6 us) Storage Temperature Tstg –30 to +150 ℃
• Selectable clock input edge (POS or POS/ *: Output current value may be limited, depending on the duty ratio, ambient temperature, and heating
NEG) conditions.
• Selectable protection availability Do not exceed junction temperature of Tj under any circumstances.
• 44-pin surface-mount

Ratings
min. max.
1.0 When not using protection
REF Input Voltage VREF 0.04 V
0.5 When using protection
Case Temperature Tc 85 ℃ Temperature at the center of the package

Ratings
min. typ. max.
Driver Supply Current
IBBS 100 µA Sleep Mode
Output MOSFET ON Resistance RDS(ON) 0.25 0.4 Ω ID=1.5A
Output MOSFET Diode Forward Voltage VF 0.95 1.2 V IF=1.5A
Maximum Clock Frequency Fclk 250 kHz When Duty = 50%
VIL 0.25VDD
VIH 0.75VDD
IIL ±1
IIH ±1
0.04 1.5 When not using protection
VREF
REF Input Voltage 0.04 0.6 V When using protection
VREFS 2 VDD Sleep1 Mode
REF Input Current IREF ±10 µA VREF=0 to VDD
VLOL 1.25 V ILOL=1.25mA
Logic Output Voltage
VLOH VDD-1.25 V ILOH=–1.25mA
ILOL 1.25 mA
Logic Output Current
ILOH –1.25 mA
Sense Voltage VSENSE 0.2 V VREF=0.2V, Mode F
Overcurrent Sense Voltage Vocp 0.65 0.7 0.75 V against Vsence
Mode F 100 %
Mode E 98.1 %
Mode D 95.7 %
Mode C 92.4 %
Mode B 88.2 %
Mode A 83.1 %
Mode 9 77.3 %
Mode 8 70.7 % VREF=0.04V to 1.5V
Mode 7 63.4 %
Mode 6 55.5 %
Mode 5 47.1 %
Mode 4 38.2 %
Mode 3 29.0 %
Mode 2 19.5 %
Mode 1 9.8 %
2.0 µS Clock → Out ON
Switching Time tpdon1
1.5 µS Clock → Out OFF
1.8 µs B_SEL: L
PWM Minimum ON Time ｔon(min)
3.6 µs B_SEL: H
toff1 13 µs Mode8 to F
PWM OFF Time toff2 9.5 µs Mode4 to 7
toff3 7.5 µs Mode1 to 3
Time Not Sensing Load Disconnection topp 1.5 2 2.5 µs Starts when the PWM is turned off.
118 ICs
SI-7321M
■Typical Connection Diagram ■Pin Assignment

1 Out/A Phase A output
2 Out/A Phase A output
3 N.C. No connection
4 RsA Connection terminal for phase A sense resistor
5 G/A Phase A MOSFET gate
6 Gnd1 Device Gnd1
7 E_SEL Edge selection input
8 P_SEL Protection use selection input
12 Clock Step clock input
13 M1
14 M2 Excitation mode/Sleep 2 setting input
15 M3
16 B_SEL Blanking time selection input
17 Gnd1 Device Gnd1
18 G/B Phase B MOSFET gate
19 RsB Connection terminal for phase B sense resistor
21 Out /B Phase B output
22 Out /B Phase B output
26 RsB Connection terminal for phase B sense resistor
27 GB Phase B MOSFET gate
28 Gnd1 Device Gnd1
29 Gnd2 Device Gnd2
30 Flag Protection circuit monitor output
31 Mo 2-phase excitation state monitor output
32 VDD Logic supply
34 Gnd3 Device Gnd3
■External Dimensions (HSOP44) (Unit : mm) 35 N.C. No connection
18.6±0.3
38 Gnd4 Device Gnd4
39 Gnd1 Device Gnd1
40 GA Phase A MOSFET gate
7.5±0.2
9.9±0.3
41 RsA Connection terminal for phase A sense resistor

43 Out A Phase A output
44 Out A Phase A output
1.50 TYP
2.17
0 to 10°
2.2±0.1
–0.05
0.15 +0.1
0.65 0.5±0.2
0.10±0.05
0.10
0.22±0.05
0.12 M
ICs 119
SLA7060M/SLA7061M/SLA7062M 1-2 Phase to 4W 1-2 Phase Excitation Support, Built-in Sequencer

• Main supply voltage VBB: 46V (max), 10 to Ratings
44V recommended Parameter Symbol Unit
• Logic supply voltage VDD: 3.0 to 5.5V support Motor Supply Voltage VM 46 V
• Lineup of output current IO: 1A, 2A, 3A Driver Supply Voltage VBB 46 V
(maximum set current)
• Supporting the clock-input-method micro-step
Output Current IO 1.0 2.0 3.0 A
drive (built-in sequencer)
Logic Input Voltage VIN –0.3 to VDD+0.3 V
• 1-2 phase excitation to 4W 1-2 phase
REF Input Voltage VREF –0.3 to VDD+0.3 V
excitation support
Sense Voltage VRS –2 to +2 (tw > 1µs) V
• Self-excitation PWM current control method
Power Dissipation PD 3.5 (Without Heatsink) W
• Built-in synchronous chopping function to
prevent the audible motor noise in the hold
state Operating Ambient Temperature Ta –20 to +85 °C
• ZIP type 21-Pin mold package (SLA package) Storage Temperature Tstg –30 to +150 °C

Ratings
min. max.
Case Temperature TC 90 °C Temperature at Pin-11 Lead (Without heatsink)

Ratings
IBB 15 15 15
Conditions In operation In operation In operation mA
Main Supply Current
IBBS 100 100 100
µA
Logic Supply Current IDD 4 4 4 mA
V (BR )DS 100 100 100
Output MOSFET Breakdown Voltage V
Conditions VBB=44V, ID=1mA VBB=44V, ID=1mA VBB=44V, ID=1mA
RDS (ON) 0.7 0.25 0.18
VF 0.85 0.95 0.95
Output MOSFET Diode Forward Voltage V
Conditions IF=1A IF=2A IF=3A
fclk 250 250 250
Maximum Clock Frequency kHz
Conditions When Clock Duty = 50% When Clock Duty = 50% When Clock Duty = 50%
VIL VDD·0.25 VDD·0.25 VDD·0.25
VIH VDD·0.75 VDD·0.75 VDD·0.75
IIL ±1 ±1 ±1
IIH ±1 ±1 ±1
Conditions Clock, Reset, CW/CCW, Sync Clock, Reset, CW/CCW, Sync Clock, Reset, CW/CCW, Sync
IILM –50 –50 –50
IIH ±1 ±1 ±1
Conditions M1, M2 M1, M2 M1, M2
VREF 0 1.5 0 1.5 0 1.5
REF Input Voltage V
VREFS 2 VDD 2 VDD 2 VDD
VMoL 1.25 1.25 1.25
Conditions IMOL=1.5mA IMOL=1.5mA IMOL=1.5mA
Mo Output Voltage V
VMoH VDD–1.25 VDD–1.25 VDD–1.25
Conditions IMOH=–1.5mA IMOH=–1.5mA IMOH=–1.5mA
IMoL 3 3 3
Mo Output Current mA
IMoH –3 –3 –3
Sense Terminal Inflow Current ISENSE ±10 ±10 ±10 µA
VSENSE 0.95 1.00 1.05 0.95 1.00 1.05 0.95 1.00 1.05
Sense Voltage V
Conditions When VREF = 1V in Mode F When VREF = 1V in Mode F When VREF = 1V in Mode F
Mode F 100 100 100
Mode E 98.1 98.1 98.1
Mode D 95.7 95.7 95.7
Mode C 92.4 92.4 92.4
Mode B 88.2 88.2 88.2
Mode A 83.1 83.1 83.1
Mode 9 77.3 77.3 77.3
Mode 8 70.7 70.7 70.7
Step Reference Current Ratio %
Mode 7 63.4 63.4 63.4
Mode 6 55.5 55.5 55.5
Mode 5 47.1 47.1 47.1
Mode 4 38.2 38.2 38.2
Mode 3 29 29 29
Mode 2 19.5 19.5 19.5
Mode 1 9.8 9.8 9.8
Conditions
.
.
VREF =.VSENSE=100%, VREF=0.1 to 1.0V
.
TONC 2.0 2.0 2.0
Conditions Clock→OutON Clock→OutON Clock→OutON
Switching Time µs
TOFFC 1.5 1.5 1.5
Conditions Clock→OutOFF Clock→OutOFF Clock→OutOFF
TON (min) 1.8 1.8 1.8
PWM Minimum ON Time µs
tOFF1 12 12 12
µs
tOFF2 9 9 9
Chopping OFF Time
Conditions Mode 4 to 7 Mode 4 to 7 Mode 4 to 7 µs
tOFF3 7 7 7
Conditions Mode 1 to 3 Mode 1 to 3 Mode 1 to 3
The direction in which current flows out of the product is regarded as negative.
120 ICs

CW/CCW
1
Reset
OutA/
OutA/
OutB/
OutB/
Clock
Phase A output
OutA
OutA
OutB
OutB
OutA
REF
VDD
VBB
MO
M1
M2
2
1 2 3 4 7 6 14 13 12 9 10 8 16 18 19 20 21 3
4
MIC
Reg 5 SenseA Phase A current sense
Sequencer 6 VDD Logic supply
Pre- & Pre-
Sleep Circuit 7 REF Control current setting & output OFF control input
Driver Driver
DAC DAC
–
Synchro –
Control 11 GND Device GND
+ PWM PWM + 12 M2
Control Control Excitation mode setting input
13 M1
OSC OSC
14 MO 2-phase excitation state monitor output
5 17
SenseA 15 Sync GND 11 SenseB
18
OutB/ Phase B output
19
20
OutB Phase B output
21

VBB=VM=10~44V
* VDD line noise precaution:

The device may malfunction if the VDD line noise exceeds 0.5V. As a coun-
CA
VDD=3.0~5.5V termeasure, separating the VDD system GND (S-GND) and VBB system
OutA/
OutB/
OutA
OutB
VBB
R1 C1
Disable
GND (P-GND) from the device GND (Pin-11) helps to reduce noise.
Q1 6 16 1 2 3 4 18 19 20 21
Reset
8
CW/CCW
9
* Be sure to connect the unused logic input terminals (CW/CCW, M1, M2,
CB
Clock
10 SLA7060M Reset, Sync) to VDD or GND.
Micro- M2
12
computer, M1
13
Series Otherwise, the device will malfunction.
etc. MO
14
Sync
15 * Be sure to open the unused logic output terminal Mo.
7 5 11 17
SenseA
SenseB
REF
R2
R3 RsA RsB
GND
S-GND P-GND
Component Values (Typical)

.
Rs=0.1 to 2Ω (Power dissipation should be: P =.IO2×Rs)
R1=10kΩ CA=100µF/50V
R3=10kΩ C1=0.1µF
31.0±0.2 31.0±0.2
24.4±0.2 φ 3.2±0.15×3.8 4.8±0.2 24.4±0.2 φ 3.2±0.15×3.8 4.8±0.2
16.4±0.2 1.7±0.1 16.4±0.2 1.7±0.1
Gate burr Gate burr
φ 3.2±0.15
[Heatsink]
φ 3.2±0.15
[Heatsink]
16±0.2
12.9±0.2
16±0.2
12.9±0.2
2.45±0.2
[4.6]
3±0.5
2.45±0.2
9.9±0.2
17.9±0.6
9.9±0.2
[Measured at the root]

5±0.5
[Measured
at the root]
4 –[R1]
R-end
+0.2
0.55 –0.1
+0.2
0.65 –0.1
1.6±0.5
+0.2
4.2MIN
0.55 –0.1 20×P1.43±0.5=28.6±0.7

6±0.6
20×P1.43±0.5=28.6±1 4±0.7
[Measured at the tip] [Measured at the tip] 7.5±0.6
31.3±0.2
31.3±0.2 [Including the resin burr]
1
2
3
4
5
6
7
8
9 11 13 15 17 19 21
10 12 14 16 18 20
Forming No. No.2102 0.65 –0.1
+0.2
Forming No. No.2104
1 3 5 7 9 11 13 15 17 19 21
2 4 6 8 10 12 14 16 18 20 Product Mass : Approx.6g
ICs 121
SLA7075MR, MPR/7076MR, MPR/7077MR, MPR/7078MR, MPR 2-Phase/4 W1-2 Phase Excitation Support, Built-in Sequencer

• Lineup of built-in current sense resistor and Parameter Symbol Ratings Unit Remarks
built-in protection circuit-type
• Power supply voltages, VBB: 46 V (max), 10 to Driver Supply Voltage VBB 46 V
44 V normal operating range
• Logic supply voltages, VDD: 3.0 to 5.5 V Output Current Io *1 A Vref=0.4V, Mode F
• Maximum output currents: 1 A, 1.5 A, 2 A, and Logic Input Voltage VIN –0.3 to VDD+0.3 V
3A REF Input Voltage VREF –0.3 to VDD+0.3 V
• Built-in sequencer Sense Voltage VRS ±2 V Excluding tw<1µs
• Self-excitation PWM current control with fixed Power Dissipation 4.7 When Ta = 25°C
PD W
off-time 17 When Tc = 25°C
• Synchronous PWM chopping function prevents Junction Temperature Tj +150 °C
motor noise in Hold mode Operating Ambient Temperature Ta –20 to +85 °C
• Sleep mode for reducing the IC input current Storage Temperature Tstg –30 to +150 °C
in stand-by state *1: Output current value may be limited for the SLA7075MR, MPR (1.0 A), SLA7076MR, MPR (1.5 A), SLA7077MR, MPR
• ZIP type 23-pin molded package (SLA (2.0 A), and SA7078MR, MPR (3.0 A), depending on the duty ratio, ambient temperature, and heating conditions.
package) Do not exceed junction temperature of Tj under any circumstances.

Rating
min. max.
Driver Supply Voltage VS 10 44 V
Logic Supply Voltage VDD 3.0 5.5 V The VCC surge voltage should be 0.5 V or lower
REF Input Voltage VREF 0.0 0.4 V When operating current control
Case Temperature TC 90 °C Temperature at Pin-12 Lead (without heatsink)
Ratings
min. typ. max.
Main Supply Current
IBBS 100 µA Sleep 1 and Sleep 2 modes
0.7 0.85 SLA7075M, ID=1.0A
0.45 0.6 SLA7076M, ID=1.5A
0.25 0.4 SLA7077M, ID=2.0A
0.18 0.24 SLA7078M, ID=3.0A
0.85 1.1 SLA7075M, ID=1.0A
1.0 1.25 SLA7076M, ID=1.5A
0.95 1.2 SLA7077M, ID=2.0A
0.95 2.1 SLA7078M, ID=3.0A
Maximum Clock Frequency Fclock 250 kHz When Clock Duty = 50%
VIL 0.25VDD
VIH 0.75VDD
IIL ±1
IIH ±1
0.04 0.3 SLA7075MR/7075MPR, within the specified current limit
VREF
REF Input Voltage 0.04 0.4 V SLA7077MR/7077MPR, within the specified current limit
VREFS 2 VDD Output (OFF) Sleep 1
SENSE Sense Voltage VSENSE VREF V When step reference current ratio is 100%
tcon 2.0 µS Clock → Out ON
Switching Time
tcoff 1.5 µS Clock → Out OFF
Sense Resistance RS Ω
Overcurrent Sense Voltage Vocp 0.65 0.7 0.75 V SLA7075MPR/7076MPR/7077MPR/7078MPR, when motor coil shorts out
Overcurrent Sense Current Iocp 3.5 A SLA7077MPR
4.6 SLA7078MPR
VFlagL 1.25 SLA70750MPR/7076MPR/7077MPR/7078MPR, IFlagL=1.25mA
VFlagH VDD–1.25 SLA7075MPR/7076MPR/7077MPR/7078MPR, IFlagH=-1.25mA
IFlagL 1.25
IFlagH –1.25
ModeF 100 %
ModeE 98.1 %
ModeD 95.7 %
ModeC 92.4 %
ModeB 88.2 %
ModeA 83.1 %
Mode9 77.3 %
Step Reference Current Ratio Mode8 70.7 %
Mode7 63.4 %
Mode6 55.5 %
Mode5 47.1 %
Mode4 38.2 %
Mode3 29.0 %
Mode2 19.5 %
Mode1 9.8 %
VMOL 1.25 IMOL=1.25mA
Mo (Load) Output Voltage V
VMOH VDD–1.25 IMOH=–1.25mA
IMOL 1.25
Mo (Load) Output Current mA
IMOH –1.25
PWM Minimum ON Time ton(min) 1.7 µS
toff1 12 µS Mode 8 to F
PWM OFF Time toff2 9 µS Mode 4 to 7
toff3 7 µS Mode 1 to 3
122 ICs

1
OutA Phase A output
Ref/Sleep1
2
CW/CCW
Reset
Clock
3
OutA
OutA
OutA
OutA
OutB
OutB
OutB
OutB
Flag
VDD
VBB
MO
M1
M2
M3
4
1 2 3 4 14 15 18 6 7 8 9 16 10 15 11 20 21 22 23
5 SenseA Phase A current sense
MIC Reg 6 MO 2 phase excitation state output monitor output
7 M1
Pre- Sequencer
Pre- 8 M2 Excitation mode/Sleep 2 setting input
Driver Driver
&
Sleep Circuit
9 M3
Protect Protect
DAC DAC 12 Gnd Device GND
+
–
Synchro
5 + Control – 19 14 VDD Logic supply
SenseA PWM PWM SenseB
Control Control 15 Reset Internal logic reset input
RS OSC OSC RS
18 Flag*1 Protection circuit monitor output*1
17 12
Sync Gnd
20
OutB/ Phase B current output
21
22
OutB Phase B current output
23
The protect circuit is deleted and the flag pin is N.C. for SLA7075MR, 7076MR, 7077MR, and 7078MR. *1: N.C. pin for SLA7075MR, 7076MR, 7077MR, and 7078MR.
■Typical Connection Diagram ■External Dimensions (ZIP23 with Fin [SLA23Pin])
Vs=10V to 44V
31±0.2
24.4±0.2 4.6±0.2
φ 3.2±0.15 × 3.8
16.4±0.2
1.7±0.1
Gate burr
+
CA
Vcc=3.0V to 5.5V
OutA OutA BB OutB OutB φ 3.2±0.15
16±0.2
r1 C1 VDD
12.9±0.2
Q1 2.45±0.2
9.9±0.2
Reset/Sleep1
5±0.5
CB (Measured at
Clock the root)
CW/CCW SLA7075MR,MPR
M1 SLA7076MR,MPR 4–(R1)
Micro-
9.5 –0.5
M2 SLA7077MR,MPR
+1
computer,
etc. R-end
M3 SLA7078MR,MPR
Sync
MO +0.2
0.65 –0.1 +0.2
Flag 0.55 –0.1
(4.3)
Ref/Sleep 22P × 1.27 ±0.5

=27.94 ±1
SenseA Gnd SenseB
4.5±0.7
31.3±0.2
r2 r3 C2
One-point
Gnd
Logic Gnd Power Gnd

* There is no Flag pin (pin 18) for SLA7075MR, 7076MR, 7077MR, and 7078MR.
ICs 123
PG001M Serial Signal Generator ICs for SLA7042M and SLA7044M

Supply Voltage VDD –0.5 to 7 V
Input Voltage VI –0.5 to VDD+0.5 V
Input Current II ±10 mA
Output Voltage VO –0.5 to VDD+0.5 V
Output Current IO ±15 mA
Power Dissipation PD 200 mW
Operating Temperature TOP –20 to +85 °C

Ratings
Parameter Symbol Conditions Unit
min. typ. max.
Supply Voltage VDD 4.5 5.5 V
Supply Current IDD VDD=5.5V 0.35 0.45 mA
DC characteristics
VOH 4.5
Output Voltage VOL VDD=5V, IO=±3mA 0.4 V
Input Current II VDD=5V, VI=0 or 5V ±1 µA

VIH 3.5 5
Input Voltage VDD=5V V
VIL –0.3 1.5
Input Hysteresis Voltage VH VDD=5V 1 V
Input Capacity CI VDD=5V 5 10 pF
Internal Oscillation Frequency F 1.5 MHz
VDD=5V
TCS 50 100
Propagation Delay Time See Fig.1. ns
TCC 430 550
AC characteristics
Output Voltage Tr VDD=5V, CL=15pF 20

ns
Rise and Fall Time Tf See Fig.2. 20
CLOCK IN Terminal VCIH H level time, VDD=5V 4.5
µs
Input Clock Time VCIL L level time, VDD=5V 0.5
Reset Setting Time (A) ts R From/To CLOCK_IN ↑
100 ns
Stabilization Time After Reset Input (B) tps R See Fig.3.
Signal Setting Time (C) ts S From/To CLOCK_IN ↑
100 ns
Stabilization Time After Signal Input (D) tps S See Fig.3.
Fig. 1 Fig.2 Fig. 3 Timing conditions

Excitation changeover point
CLOCK_IN 90%
CLOCK_OUT CLOCK_IN
DATA B
CLOCK_OUT STROBE A
DATA RESET
10%
STROBE
MO
TCC Tr Tf
1/F 1/F TCS
MS1 D
MS2
C
CW/CCW
VC C
D C D C D
VC changeover occurs only while CLOCK-IN level is L.
5V
16
1 VDD
RESET
CLOCK 14
2 CLOCK_A
_OUT
CLOCK_IN
MPU 3 CW/CCW
P CLOCK_B
G 13
6 0 STROBE STROBE_A SLA7042M
MS1
0 STROBE_B SLA7044M
7
MS2 1
11
15 M DATA_A DATA_A
VC
10
9 DATA_B DATA_B
MO
NC GND CP1 CP2
12 8 5 4
Rs Rs
NC NC NC
124 ICs
PG001M
■Internal Block Diagram ■Input and Output Function Correlation Table

Input Output
× : Immaterial
VDD
Mode CLOCK CW RESET MO CLOCK STROBE DATA DATA
16
··· Input _IN /CCW _OUT -A -B * : MO outputs L level while
MS1 6
··· Output
CW
L H
CW CW
CLOCK_IN is H level when out-
(Numbers indicate
(A) SET
MS1 7 Excitation mode setting section
pin numbers.) L H
put mode is 4:4 (7:7), 4:4 (7:7),
CCW
H H
CCW CCW
4:4 (7:7), or 4:4 (7:7).
H H
2h Modes in brackets ( ) are for
× L Output Mode Input Mode
VC 15
a
14 CLOCK_OUT RESET
4 or 7 4 or 7 2-2 phase VC:H.
(B) Output Output
b (C) × L
MO 9 Parallel signal
Parallel-serial 11 DATA_A Mode Mode
generator
c signal converter
10 DATA_B
Q1 Q2 Q3 Q4 Phase
13 STROBE
■Excitation Selection Table
Input Output current mode of SLA7042M/7044M
CLOCK_IN 2
(E)
(D) Oscillator Excitation Excitation mode
CW/CCW 3 0 1 2 3 4 5 6 7
Up/Down counter method selection
Torque vector
RESET 1 VC MS1 MS2 0% 20% 40% 55.5% 71.4% 83% 91% 100%
H L L − − − − − − − 141%
8 5 4 12 2-2 Phase
GND CP1 CP2 NC Full Step
L L L − − − − − − − 100%
Connect all unused input pins to H or L level (Except for CP1,CP2 and NC pins)
1-2 Phase
× H L − − − − − 100%
Half Step
W1-2 Phase
× L H − − − 100%
1/4 Step
2W1-2 Phase
× H H 100%
1/8 Step
■Output Mode Vs Output Pulse ■Output Mode Sequence

RESET
Excitation CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Output pulse Output pulse CW/CCW
method MO L H H H H H H H L H H H H H H H L H H H H H H H L H H H H H H H L
OUT excitation OUT excitation
DATA_A 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7
Phase a b c Phase a b c CW
CLOCK CLOCK 2-2 Phase DATA_B 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7
_OUT 0 _OUT 0
Full Step (1)
STROBE 0 STROBE 0 (VC:H) DATA_A 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7
CCW
DATA_B 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7 = = = = = = = 7
0 0 DATA_A 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4
0 0
2-2 Phase CW
DATA_B 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4
Full Step (2)
1 1 (VC:L) DATA_A 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4
0 0 CCW
DATA_B 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4 = = = = = = = 4
2 2 DATA_A 4 = = = 0 = = = 4 = = = 7 = = = 4 = = = 0 = = = 4 = = = 7 = = = 4
0 0
CW
1-2 Phase DATA_B 4 = = = 7 = = = 4 = = = 0 = = = 4 = = = 7 = = = 4 = = = 0 = = = 4
Output mode
Output mode
3 3 Half Step
0 0 DATA_A 4 = = = 7 = = = 4 = = = 0 = = = 4 = = = 7 = = = 4 = = = 0 = = = 4
CCW
DATA_B 4 = = = 0 = = = 4 = = = 7 = = = 4 = = = 0 = = = 4 = = = 7 = = = 4
4 0
4 0 DATA_A 4 = 2 = 0 = 2 = 4 = 6 = 7 = 6 = 4 = 2 = 0 = 2 = 4 = 6 = 7 = 6 = 4
CW
W1-2 Phase DATA_B 4 = 6 = 7 = 6 = 4 = 2 = 0 = 2 = 4 = 6 = 7 = 6 = 4 = 2 = 0 = 2 = 4
5 5 1/4 Step DATA_A 4 = 6 = 7 = 6 = 4 = 2 = 0 = 2 = 4 = 6 = 7 = 6 = 4 = 2 = 0 = 2 = 4
0 0
CCW
DATA_B 4 = 2 = 0 = 2 = 4 = 6 = 7 = 6 = 4 = 2 = 0 = 2 = 4 = 6 = 7 = 6 = 4
6 6 DATA_A 4 3 2 1 0 1 2 3 4 5 6 7 7 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 7 7 6 5 4
0 0
CW
2W1-2 Phase DATA_B 4 5 6 7 7 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 7 7 6 5 4 3 2 1 0 1 2 3 4
7 7 1/8 Step
0 DATA_A 4 5 6 7 7 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 7 7 6 5 4 3 2 1 0 1 2 3 4
CCW
DATA_B 4 3 2 1 0 1 2 3 4 5 6 7 7 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 7 7 6 5 4
= : No output
19.2
20.0max
16 9
6.65max
Lot No.
6.3
Part No.
1 8
0.89 1.3 7.62
2.54min 5.08max
0.51min
+0.11
2.54±0.25 0.48±0.10 0.25 −0.05
0 to 15°C
ICs 125
1-2-2 3-Phase Stepper Motor Driver ICs
SLA7611M Star Connection/Delta Connection

Main Supply Voltage VBB 36 V
Logic Supply Voltage VCC 7 V
IO (Ave) 3 A
Output Current
IO (Peak) 6 A tw < 1ms
Logic Input Voltage VIN –0.3 to VCC+0.3 V
REF Input Voltage VREF –0.3 to VCC+0.3 V
PFD Input Voltage VPFD –0.3 to VCC+0.3 V
Sense Voltage VRs –2 to 2 V
Power Dissipation PD 4 W Without heatsink
Junction Temperature Tj 150 °C
Operating Ambient Temperature Ta –20 to 85 °C
Storage Temperature Tstg –30 to 150 °C

Main Supply Voltage VBB 10 to 30 V
Logic Supply Voltage VCC 3 to 5.5 V The VCC surge voltage should be 0.5V or lower.
REF Input Voltage VREF 0.2 to VCC V The control current precision is degraded at 0.2V or lower.
Case Temperature TC 110max °C Temperature at Pin-10 Lead (without heatsink)
■Electrical Characteristics (Ta=25°C, VBB=24V, VCC=5V, unless otherwise specified)

Ratings
min. typ. max.
Main Supply Current IBB 20 mA
Charge Pump Voltage VB VBB+5 V
Output Withstand Voltage VO 36 V
Output MOS FET ON Resistance
(total of the upper and lower values) RDS (on) 0.8 Ω IDS=3A
Output MOS FET

VSD 1.5 V ISD=3A
Diode Forward Voltage
VIL VCC×0.25 V
Logic Input Voltage
VIH VCC×0.75 V
IIL ±1 µA
Logic Input Current Excluding Ena
IIH ±1 µA
Maximum Clock Frequency Fclock 100 kHz
PFD Input Current IPFD ±10 µA
RC Terminal Inflow Current IRC 200 µA
VPFDS 1.7 VCC V Slow Decay
PFD Input Voltage VPFDM 0.7 1.3 V Mixed Decay
VPFDF 0.3 V Fast Decay
Sense Voltage VRs VREF×0.2 V Steady-state
REF Input Voltage VREF 0 VCC V
PWM OFF Time TOFF 1.1×Rt×Ct µs
Thermal Protection Circuit Activation Temperature Tj 150 °C
Hysteresis of Thermal Protection
Circuit Activation Temperature ∆Tj 10 °C
TONC 2.5 µs Clock→Out

Switching Time
TOFFC 2 µs Clock→Out
126 ICs
SLA7611M
■Internal Block Diagram ■Pin Assignment (Function Table)

CP1 CP2 VB VBB 1 Sense Current sense
16 15 18 9 2 Out U Phase U output
VCC 3 VCC Logic supply
3
TSD Reg Charge Pump
4 RC PWM OFF time setting
UVLO
5 PFD Mixed Decay ratio setting
OUT Block 2 6 REF Control current setting
Clock 13 7 Reset Internal logic reset
Level OUTU
CW/CCW 12 shift 11 8 Ena Output Enable/Disable control
Sequence
& Main supply (motor supply)
F/H 14 Logic
OUTV
9 VBB
Pri-Driver
Ena 8 10 GND Device GND
17
Reset 7 11 Out V Phase V output
OUTW
1 12 CW/CCW Forward/reverse control
+ S 13 Clock Step Clock
REF 6 PWM Current
Control Control _ 14 Full/Half Full/half step control
15 CP2 Charge pump capacitor 2
5 4 10 16 CP1 Charge pump capacitor 1
PFD RC GND 17 Out W Phase W output
18 VB Boost charge pump
C2 C1 10 to 30V
+
16 15 18 9
5V 3 CA C5
VCC CP1 CP2 VB VBB
CB + C4 C3
2
13 OUTU
Clock
12
CW/CCW 11
Micro- OUTV 3φ SPM
computer,
14
F/H
SLA7611M
etc. 8
Ena 17
7 OUTW
Reset
1
S
R4 R2
6 REF
PFD RC GND
5 4 10
Rs
Ct Rt
R1 R5 R3
S-GND P-GND
31±0.2
φ 3.2±0.15 24.4±0.2 φ 3.2±0.15×3.8 4.8 ±0.2
16.4±0.2 1.7±0.1
16 ±0.2
13 ±0.2
9.9 ±0.2
Part Number 2.45±0.2

Lot number
6.7±0.5
9.7 –0.5
+1
R-End
(3)
+0.2 +0.2 +0.2

0.65 –0.1 1 –0.1 0.55 –0.1
4±0.7
17×P1.68±0.4=28.56±1
31.3±0.2
Other lead forming shapes are also available.
For details, contact our sales representative.
1 2 3 . . . . . . . . 18
Forming No. No.871 Product Mass : Approx.6g
ICs 127
1-2-3 5-Phase Stepper Motor Driver ICs
SI-7510 New Pentagon Connection

Main Supply Voltage VCC1 44 V
Logic Supply Voltage VCC2 7 V
Logic Input Voltage VIN –0.3 to VCC2 V
REF Input Voltage VREF –0.3 to VCC2 V
SENCE Input Voltage VSENCE 2 V Except when tw<1µs
Charge Pump Output Voltage VMC3 48 V
Power Dissipation PD 1.6 W
■Recommended Operating Ranges

Parameter Symbol Operating Ranges Unit
Main Supply Voltage VCC1 10 to 42* V
Logic Supply Voltage VCC2 3 to 5.5 V
REF Input Voltage VREF 0.1 to 1 V
*: Insert a 5V Zener diode between VCC1 and VMC3 when using with VCC1 of 35 V or more.
■Electrical Characteristics (Ta=25°C, Vcc1=24V, VCC2=5V, unless otherwise specified)

Ratings
min. typ. max.
Main Supply Current ICC1 25 mA
Logic Supply Current ICC2 10 mA
VIL 1.25 V
Logic Input Voltage
VIH 3.75 V
IIL –20 20 µA VIL=0V
Logic Input Current
IIH –20 20 µA VIH=5.5V
ENA Input Current IENA –100 20 µA VENA=0V
REF Input Current IREF –20 20 µA VREF=0 to 5.5V
SENCE Voltage VSENCE 1 V VREF=1V
SENCE Current ISENCE –20 20 µA VSENCE=0V, 2V
VMOL 1 V IMOL=1mA
MO Output Voltage
VMOH 4 V IMOH=–1mA
VRCL 0.5 V
RC Pin Threshold Voltage
VRCH 1.5 V
RC Pin Outflow Current IRC 300 µA VRC=0V
Charge Pump Output Voltage VMC3 VCC1+9 V
High Side Output Voltage VHGSL 1 V Without Zener diode
(between gate sources) VHGSH 8.5 V
VLGL 1 V
Low Side Output Voltage
VLGH 7.5 V
Maximum CL Frequency fck 100 KHz
Maximum Input CL Width (on) TCON 1 µs
Power-on Reset time PTW 1.5 µs
Output Delay Time TIO 2 µs
CW/CCW, F/H
TICS 500 µs
Input Data Setup Time Against CL ↑
CW/CCW, F/H
TICH 500 µs
Input Data Hold Time
128 ICs
SI-7510
■Internal Block Diagram ■Pin Assignment and Function Table

VCC2 VCC1 MC2 MC3 MC1
1 MC1 Capacitor Connection Terminal for Charge Pump (for MC2)
2 MC3 Capacitor Connection Terminal for Charge Pump (for Gnd)
Oscillator Charge Pump
3 MC2 Capacitor Connection Terminal for Charge Pump (for MC1)
4 VCC1 Main Supply Voltage Input
OHGA
Enable OHSA 5 Enable Output OFF
OHGB
OHSB 6 VCC2 Logic Voltage Input
MO Highside Drive OHGC
OHSC
CL
OHGD
OHSD
7 MO Monitor to Detect Motor Position
OHGE
Sequencer OHSE 8 CL Clock
F/H
9 F/H 4-phase, 4-5 phase switching
CW/CCW OLA
Lowside Drive
OLB
OLC
10 CW/CCW Switching Between Forward and Backward Rotation
Reset OLD
OLE 11 Reset Reset
RC 12 RC RC Connection for Chopping Off Time Setting
PWM 13 Ref Reference Voltage Input for Motor Current Setting
Ref
Control
Sense 14 Sense For Motor Current Detection
Gnd 15 Gnd Gnd
16 VOLE Low Side MOSFET Gate Connection Pin (E-phase)
17 VOLD Low Side MOSFET Gate Connection Pin (D-phase)
18 VOLC Low Side MOSFET Gate Connection Pin (C-phase)
■Typical Connection Diagram 19 VOLB Low Side MOSFET Gate Connection Pin (B-phase)
20 VOLA Low Side MOSFET Gate Connection Pin (A-phase)
C1 C2
24V 21 VOHSE High Side MOSFET Source Connection Pin (E-phase)
5V IO=VRS/RS
VCC2 MC1 MC2 MC3 VCC1 IOM=Io/2 22 VOHGE High Side MOSFET Gate Connection Pin (E-phase)
6 1 3 2 4 *IOM : Motor Coil Current
OHGA
4 5 10 15
30
29 OHSA
OHGB
3 23 VOHSD High Side MOSFET Source Connection Pin (D-phase)
28 OHSB
9 1 tOFF=1.1*Rt*Ct
R3 27
26 OHGC
7
14 SLA5073 8 24 VOHGD High Side MOSFET Gate Connection Pin (D-phase)
25 OHSC 12
Enable OHGD
5 24 2 13
MO
23 OHSD
6 25 VOHSC High Side MOSFET Source Connection Pin (C-phase)
SI-7510
OHGE
7 22 OHSE
11
CL
21
Logic Signal
Input and Output F/H
8
5-phase SPM
26 VOHGC High Side MOSFET Gate Connection Pin (C-phase)
9 New Pentagon
CW/CCW
10 OLA
27 VOHSB High Side MOSFET Source Connection Pin (B-phase)
Reset
20 OLB
11 19
C4
18 OLC
4 Pins 11 to 15: NC
28 VOHGB High Side MOSFET Gate Connection Pin (B-phase)
3
9 5
29 VOHSA High Side MOSFET Source Connection Pin (A-phase)
R1Ref 7 SLA5074 R1=510Ω
13
17
OLD
2
10
R2=100Ω(VR) 30 VOHGA High Side MOSFET Gate Connection Terminal (A-phase)
C3 R2 16 OLE
6 1 8 R3=20KΩ
RS=0.33Ω(1 to 2W)
Sense
12 15 14 Rt=15 to 75KΩ
Ct=420 to 1100pF
RC Gnd
Rs Io
Ct Rt
C1=2200pF
C2=0.01µF
C3=0.1µF
■Truth Table
C4=0.01µF
Pin Name Low Level High Level
Positive Edge
*Be especially careful of noise on the Vcc line. The product may malfunction if noise on the Vcc line is 0.5 V or more. Clock
CW/CCW Forward Rotation (CW) Backward Rotation (CCW)

Full/Half 4-phase excitation 4-5 phase excitation
■Input and Output Timing Chart Enable Disable Enable
Reset Enable Reset
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
CL
Reset
Enable
CW/CCW
F/H
OHA
8.8±0.2
OHB
OHC
OHD
OHE
OLA
OLB
OLC
OLD
OLE
MO
Reset CW, Full CCW, Full CCW, Half CW, Half

28.2±0.3
75 80 85 90 95 100 105 110

CL
Reset
Enable
3.61±0.1
4.3±0.3
7.1±0.5
+ 0.3
CW/CCW 1.0 – 0.06
10.16
F/H
OHA * Condition to Switch Input Signals
OHB
OHC CL
0.25 –+0.0
0.1
5
OHD
OHE
OLA CW/CCW
OLB F/H
2.8±0.2
1.778
OLC
OLD The range to Prohibit Switching The range to
500ns Prohibit Switching 0° to 15°
OLE 500ns
Switchable Range
MO 1.654 TYP
0.46±0.1
CW, Half CCW,Full Disable
Disable
Reset Product Mass : Approx.2g
ICs 129
1-2-4 Brush DC Motor Driver ICs
STA6940M

• Output current: 4A (peak: 8A)
• Power supply voltage: VBB = 10 to 40V Driver Supply Voltage VBB 44 V
• Logic supply voltage: VDD = 3.0 to 5.5V Logic Supply Voltage VDD 6 V
Output Current Io 8 A 100µs or less
• Built-in UVLO, OCP, and TSD protection Logic Input Voltage VIN –0.3 to VDD+0.3 V
• Built-in diag output function PWM REF Input Voltage VPREF –0.3 to VDD+0.3 V
OCP REF Input Voltage VOREF –0.3 to VDD+0.3 V
• STA 18-pin package
Sense Voltage VRS –1 to 2 V
2.7 W DC control (Ta = 25°C)
Power Dissipation PD 3.0 W PWM control (Ta = 25°C) at Slow Decay
3.2 W PWM control (Ta = 25°C) at Fast Decay
*: Output current value may be limited, depending on the duty ratio, ambient temperature, and heating
conditions. Do not exceed junction temperature of Tj under any circumstances.

Ratings
min. max.
Main Supply Voltage VBB 10 40 V
Output Current Io 4.0 A
Logic Supply Voltage VDD 3.0 5.5 V
PWM REF Input Voltage VPREF 1 V When operating current control
OCP REF Input Voltage VOREF 2 V When operating overcurrent control
Case Temperature Tc 85 °C Rear center (without Fin)

Ratings
Parameter Symbol Unit Concitions
min. typ. max.
Main Supply Current IBB 20 mA In operation
Charge Pump Voltage Vcp VBB+5 V VBB=10V to 40V
Charge Pump Oscillation Frequency Fcp 360 kHz
VUVBL 7 V
Low Driver Supply Voltage Protection Voltage
VUVBH 7.8 V
VUVDL 2.3 V
Low Logic Supply Voltage Protection Voltage
VUVDH 2.5 V
VUVCL 3.8 V
Low Charge Pump Voltage Protection Voltage against VBB
VUVCH 4 V
Output MOSFET Breakdown Voltage V(BR)DS 53 V ID=250µA
Output MOSFET ON Resistance RDS(ON) 0.1 0.13 Ω ID=4.0A
Output MOSFET Diode Forward Voltage VF 0.95 2.1 V IF=4.0A
VLIL 0.25VDD V
Logic Input Voltage
VLIH 0.75VDD V
ILIL ±1 µA
Logic Input Current
ILIH ±1 µA
Maximum Logic Input Clock Frequency fclk 100 kHz duty=50%
PWM REF Input Voltage VPREF 0.1 1 V When controlling the current
PWM REF Input Current IPREF ±10 µA VREF=0 to VDD
OCP REF Input Voltage VOREF 0.1 2 V When controlling the current
OCP REF Input Current IOREF ±10 µA VREF=0 to VDD
VPREF VPREF VPREF
PWM Sense Voltage VPSEN V
–0.045 –0.015 +0.015
VOREF VOREF VOREF
Overcurrent Sense Voltage VOSEN V
–0.045 –0.015 +0.015
Sense Input Current ISENSE ±20 µA
Diag Output Voltage VLOL 1.25 V ILOL=1.25mA
VLOH VDD–1.25 V ILOL=–1.25mA
Diag Output Current ILOL 1.25 mA VLOL=1.25V
ILOH –1.25 mA VLOH=VDD-1.25
Diag Output Frequency fDIAG 90 kHz
PWM Minimum ON Time tpon(min) 5 µs
During PWM operation
PWM OFF Time tPOFF 35 µs
OCP Minimum ON Time toon(min) 5 µs
During OCP operation
OCP OFF Time tOOFF 142 µs
Crossover Current Delay Time tCOCD 150 750 ns
tcon 3 µs IN→Out ON
Switching Time
tcoff 2.7 µs IN→Out OFF
Thermal Protection Activation Temperature Ttsdon 140 °C
Temperature of rear of package (at saturation)
Thermal Protection Deactivation Temperature Ttsdoff 115 °C
130 ICs
STA6940M

1 VBB Main supply
VDD CP1 CP2 CP VBB VBB 2,3 OA Output terminal A
4 Sense 1 Constant current sense terminal
7 13 12 14 1 18
5 IN1 Output setting terminal
6 IN2
MIC 7 VDD Logic supply
8 PWM_REF Constant current setting input terminal
9 OCP_REF Overcurrent setting input terminal
Charge Reg
Pump 10 Gnd Device Gnd
11 Diag Monitor terminal
UVLO 12 CP2
2 Capacitor connection terminal for
OA 13 CP1
charge pump
5 3 14 CP
IN1 OA 15 Sense 2 Overcurrent sense terminal
6 Logic Block Pre_Driver 16
IN2 OB 16,17 OB Output terminal B
17 18 VBB Driver supply
11 OB
Diag
Comp
8 PWM OSC
PWM_REF
&
Comp OCP Reg
9
OCP_REF Contrd
10 15 4
GND Sense2 Sense1
■External Dimensions (ZIP18 [STA18Pin])
25.25±0.3 4±0.2
Lot No
(9±0.2)
3.3±0.5
Type No
(1)
1.3±0.1
(6.9)
R-end
)
R1
(4-
0.45 +0.2
–0.1
0.55 +0.2
(3.6)
–0.1
2.54±0.5
17xP1.27±0.5=21.59±1 (Measured at the tip)
25.55
C1.5±0.5 (Including the resin burr)
ICs 131
1-2-5 Brushless DC Motor Driver ICs
SPI-6631M

• Power supply voltages, VBB: 13 V to 33 V
• Signal power supply configuration Main Supply Voltage VBB 35 V
• Output current Iout: 3 A (max)... repetitive MOSFET Output Breakdown Voltage VDSS 35 V DutyCycle=100%*
current (normal-operation current) Output Current Iout ±3 A
Input Voltage VIN –0.3 to 6.5 V
• Built-in current regeneration diode
S Terminal Voltage Vsen –2 to 2 V
• Built-in UVLO, TSD and OCP protection Alarm Terminal Voltage Valarm 6.5 V
• Built-in dead time function that prevents Alarm Input Current Ialarm 1 mA
Power Dissipation PD 2.67 W When using a Sanken evaluation board
through current upon phase switching
• Built-in error sense flag output Storage Temperature Tstg –30 to 150 °C
• HSOP16-pin package Operating Ambient Temperature Ta –20 to 85 °C
*: Output current value may be limited, depending on the duty ratio, ambient temperature, and heating
conditions. Do not exceed the rated current or maximum junction temperature (Tj = 150°C).
■Electrical Characteristics (Ta=25°C, VBB=24V, unless otherwise specified)

Ratings
min. typ. max.
Main Supply Voltage VBB 13 – 33 V In operation
Main Supply Current IBB – – 20 mA
Maximum Clock Pulse Width tw – – 3 µs
VIL – – 0.8 V
Input Voltage
VIH 2.0 – – V
IIL – ±8 – µA VIN(0), VIN=0.8V
Input Current
IIH – ±20 – µA VIN(1), VIN=2.0V
Crossover Dead Time Tdelay 100 500 1200 ns
VB Terminal Breakdown Voltage VB – VBB+5 – V Breakdown voltage between VB and GND
VB-OUT Breakdown Voltage VB-OUT – 5 – V
VB Terminal Current IB – – 3 mA VB-OUT=5V
– – 800 µA VOUT=VBB=35V
Output Leakage Current IDSS
–800 – – µA VOUT=0V
MOSFET ON Resistance RDS(ON) – 0.4 0.7 Ω IOUT=-1A, Between VBB and OUT IOUT=1A, Between IOUT and S
MOSFET Diode Forward Voltage VSD – – 2.2 V ISD=1A
Overcurrent Sense Current IOCP 7 – – A Short between Out and Out
Overcurrent Protection Blank Time tblank 0.7 1.2 4 µs
Overcurrent Protection Delay Time tocp 0.5 1 2.2 ms
Thermal Protection Operation Temperature TJ – 170 – °C
Thermal Protection Hysteresis ∆TJ – 15 – °C
Low Voltage Protection Operation Voltage UVLO 4.0 4.5 5.0 V VBB voltage
Low Voltage Protection Hysteresis ∆UVLO 0.4 0.45 0.5 V
Alarm Output Voltage VAlarm – – 0.5 V I=1mA
132 ICs
SPI-6631M

1 CP2 Capacitor terminal for charge pumping 2
2 CP1 Capacitor terminal for charge pumping 1
3 OUTU DMOSFET phase U output
4 S Sense terminal (lower arm source output)
5 OUTV DMOSFET phase V output
6 OUTW DMOSFET phase W output
7 Alarm Alarm output
8 GND Ground
9 INLW Phase W lower arm input
10 INHW Phase W upper arm input
11 INLV Phase V lower arm input
12 INHV Phase V upper arm input
13 VBB Driver supply terminal
14 INLU Phase U lower arm input
15 INHU Phase U upper arm input
16 VB Capacitor terminal for charging up charge pump
12.20 ± 0.20
(Gate remains: Not included in dimensions)
7.70
16 9
10.50 ± 0.30
7.50 ± 0.20
4.30
1 8
+0.15
1.27 0.4 –0.05
+0.15
0.25 –0.05
2.50 ± 0.05
2.75MAX
12.00 ± 0.05
(Cavity)
ICs 133
1-2-6 High-voltage 3-phase Motor Driver ICs
SX68000M Series

• A package of 6 MOSFET units for 3-phase
Ratings
bridge and pre-drive (HVIC, LVIC) Parameter Symbol Unit Conditions
SX68001M SX68002M SX68003M
• Best for driving the fan motor (built-in motor) of MOSFET Output Breakdown Voltage VDSS 250 500 500 V Vcc=15V,VIN=0V
air conditioner, etc. Control Supply Voltage VCC 20 20 20 V Between VCC and COM
Control Supply Voltage (Bootstrap) VBS 20 20 20 V Between VB and HS (U, V, W)
• Built-in boot diode with limited resistance
Output Current (continuous) Io 2.0 1.5 2.5 A
• Built-in undervoltage lock out (UVLO) circuit Output Current (pulse) Iop 3.0 2.25 3.75 A PW≤100µs, duty=1%
• Built-in overcurrent protection circuit (OCP) Input Voltage VIN –0.5 to +7 –0.5 to +7 –0.5 to +7 V
Power Dissipation PD 3 3 3 W Ta=25℃
• Built-in Thermal Shut Down (TSD) function Thermal Resistance (Junction to Case) θj-c 15 15 15 °C/W All element operation
• Built-in current limiter function (OCL) Thermal Resistance (Junction to Ambient Air) θj-a 41.7 41.7 41.7 °C/W All element operation
Operating Case Temperature Top –20 to +100 –20 to +100 –20 to +100 °C
• Error (FO) terminal with shutdown input
Junction Temperature (Power part) Tch +150 +150 +150 °C
function
Storage Temperature Tstg –40 to +150 –40 to +150 –40 to +150 °C
• 7.5V regulator output function (35mA max.)

Ratings
Parameter Symbol SX68001M SX68002M SX68003M Unit Condotions
Main Supply Voltage VBB – 140 200 – 280 400 – 280 400 V Between VBB and LS
Control Supply Voltage Vcc 13.5 – 16.5 13.5 – 16.5 13.5 – 16.5 V Between VCC and COM
Input Signal Dead Time tdead 1.5 – – 1.5 – – 1.5 – – µs
Minimum Input Pulse Width ｔｗ 0.5 – – 0.5 – – 0.5 – – µs
Junction Temperature Tj – – 125 – – 125 – – 125 °C
Ratings
Parameter Symbol SX68001M SX68002M SX68003M Unit Condotions
Control Supply Voltage Vcc 13.5 15 16.5 13.5 – 16.5 13.5 – 16.5 V Between VCC1,2 and COM1,2
Control Supply Current Icc – 4.6 7.4 – 4.6 7.4 – 4.6 7.4 mA Vcc1,2=15V
Boot Supply Current Ibs – 140 280 – 140 280 – 140 280 µA VB・HS=15V
VIH – 2.0 2.5 – 2.0 2.5 – 2.0 2.5 Vcc=15V, Output:ON
Input Voltage V
VIL 1.0 1.5 – 1.0 1.5 – 1.0 1.5 – Vcc=15V, Output:OFF
Input Voltage Hysteresis Width VH – 0.5 – – 0.5 – – 0.5 – V Vcc=15V
Input Current IIH – 230 500 – 230 500 – 230 500 µA Vcc=15V, VIN=5V
Undervoltage Lock Out VUVHL 9.0 – 11.0 9.0 – 11.0 9.0 – 11.0
V
(high side) VUVHH 9.5 – 11.5 9.5 – 11.5 9.5 – 11.5
Vcc=15V
Undervoltage Lock Out VUVLL 10.0 – 12.0 10.0 – 12.0 10.0 – 12.0
V
(low side) VUVLH 10.5 – 12.5 10.5 – 12.5 10.5 – 12.5
FO Terminal Output VFOL – – 0.5 – – 0.5 – – 0.5
V Vcc=15V, VFO=5V, RFO=10kΩ
Voltage VFOH 4.8 – – 4.8 – – 4.8 – –
VOCLL – – 0.5 – – 0.5 – 0.5
OCL Output Voltage V Vcc=15V
VOCLH 4.5 – 5.5 4.5 – 5.5 4.5 – 5.5
Current Limiter Reference Voltage VLIM 0.6175 0.65 0.6825 0.6175 0.65 0.6825 0.6175 0.65 0.6825 V Vcc=15V
Overcurrent Protection Trip Voltage VTRIP 0.9 1.0 1.1 0.9 1.0 1.1 0.9 1.0 1.1 V Vcc=15V
Overcurrent Protection Retention Time tp 20 25 – 20 25 – 20 25 – µs Vcc=15V
OCP Blanking Time tbk(ocp) – 2 – – 2 – – 2 – µs Vcc=15V
SD Terminal Blanking Time tbk(ocl) – 3.3 – – 3.3 – – 3.3 – µs Vcc=15V
TDH 135 150 165 135 150 165 135 150 165
Thermal Protection and
TDL 105 120 135 105 120 135 105 120 135 °C Vcc=15V
Release Threshold
TDhys – 30 – – 30 – – 30 –
Regulator Output Voltage VREG 6.75 7.5 8.25 6.75 7.5 8.25 6.75 7.5 8.25 V IREG=35mA
MOSFET Output Breakdown Voltage VDSS 250 – – 500 – – 500 – – V Vcc=15V, ID=100µA, VIN=0V
Vcc=15V, VDS=500V(250 V forSX68001M),
MOSFET Output Leakage Current IDSS – – 100 – – 100 – – 100 µA VIN=0V
Vcc=15V, ID=1A(0.75 A for SX68002M or
MOSFET DC ON Resistance RDS（ON） – 1.25 1.5 – 3.2 4.0 – 2.0 2.4 Ω 1.5 A for SX68003M), VIN=5V
Vcc=15V, ISD=1A(0.75 A for SX68002M or
Diode Forward Voltage VSD – 1.1 1.5 – 1.0 1.5 – 1.0 1.5 V 1.5 A for SX68003M), VIN=0V
Boot Diode Leakage Current IIB – – 10 – – 10 – – 10 µA VR=500V(250 V for SX68001M)
Boot Diode Forward Voltage VFB – 1.0 1.3 – 1.0 1.3 – 1.0 1.3 V IF=0.15A
Boot Diode Reverse Recovery Time trr – 70 – – 70 – – 70 – ns IF/IRP=100mA/100mA
Boot Diode Series Resistance RB 48 60 72 48 60 72 48 60 72 Ω
td(on) – 800 – – 810 – – 940 –
tr – 45 – – 60 – – 100 –
High Side Switching Time trr – 75 – – 120 – – 135 – ns
td(off) – 720 – – 815 – – 975 – V DC =300V(150V for SX68001M),
tf – 40 – – 38 – – 45 – Vcc=15V, ID=1A(0.75 A for SX68002M
td(on) – 750 – – 760 – – 900 – or 1.5 A for SX68003M), HIN=0 to 5V，
tr – 53 – – 58 – – 105 – Inductive load
Low Side Switching Time trr – 70 – – 110 – – 135 – ns
td(off) – 660 – – 750 – – 905 –
tf – 20 – – 32 – – 35 –
134 ICs
SX68000M Series

VB1 VB2 VB32 VB31
VCC1
VBB1
VBB2
UVLO UVLO UVLO UVLO
HIN1
Input
HIN2 High Side
Logic
Level Shift Drive
HIN3
W1
COM1
W2
V
SD
V1
V2
VCC2
U
REG REG UVLO
LIN1
Input Logic
LIN2
(OCP reset) Low Side Driver
LIN3
COM2
Thermal
Shutdown OCP
FO OCP & OCL LS
OCL
VB1 VB2 VB32 VB31

15V
VCC1
VBB1
VBB2
UVLO UVLO UVLO UVLO

Control IC
HIN1
HIN2 Input High Side
Logic Level Shift Drive
HIN3
W1
COM1
W2
V
SD BLDCM
V1
V2
VCC2
U
REG UVLO
REG
LIN1
LIN2 Input Logic
LIN3 (OCP reset) Low Side Driver
5V COM2
Thermal
OCP
Shutdown
FO LS
OCP & OCL
OCL
22± 0.2
0.25 +0.15
–0.05
0.4 +0.15
–0.05
18 27
(Excluding the resin burr)
11.4± 0.2
14.1± 0.3
1 17
1.2±0.2
1.05±0.2 A
2.1± 0.2
ICs 135
SMA6820MP Series/SLA6820M Series

• A package of 6 MOSFET units for 3-phase Ratings
bridge, pre-drive (HVIC, LVIC) and boot diode SMA6821MP/SLA6826M SMA6822MP/SLA6827M SMA6823MP/SLA6828M
MOSFET Output Withstand Voltage VDSS 250 500 500 V Vcc=15V,VIN=0V
• Best for fan motor inverter control Control Supply Voltage Vcc 20 20 20 V Between VCC and COM
• High side drive of bootstrap method has been Control Supply Voltage (bootstrap) VBS 20 20 20 V Between VB and HS (U, V, W)
employed. Output Current (continuous) Io 2.0 1.5 2.5 A

Output Current (pulse) Iop 4 3 5 A PW≤100µs, duty=1%
• Built-in undervoltage lock out (auto regression) Regulator Output Current IREG 35 35 35 mA
Input Voltage VIN –0.5 to +7 –0.5 to +7 –0.5 to +7 V
• Built-in Thermal detection circuit (no stopping)
Power Dissipation PD 28/32.8 28/32.8 28/32.8 W Tc=25°C
• Built-in fail signal output function (for when the Thermal Resistance (Junction to Case) θ j–c 4.46/3.8 4.46/3.8 4.46/3.8 C°/W When all elements operating
overheat detection circuit and UVLO) Thermal Resistance (Junction to Ambient Air) θ j–a 31.25/27.7 31.25/27.7 31.25/27.7 C°/W When all elements operating
Operating Case Temperature Top –20 to +100 –20 to +100 –20 to +100 C°
• Built-in 7.5 V regulator output (35 mA, max.) Junction Temperature (Power part) Tch +150 +150 +150 C°
Storage Temperature Tstg –40 to +150 –40 to +150 –40 to +150 C°

Ratings
Parameter Symbol SMA6821MP/SLA6826M SMA6822MP/SLA6827M SMA6823MP/SLA6828M Unit Conditions
Control Supply Voltage Vcc 13.5 – 16.5 13.5 – 16.5 13.5 – 16.5 V Between VCC and COM
Minimum Input Pulse Width tw 0.5 – – 0.5 – – 0.5 – – µs
Junction Temperatur Tj – – 125 – – 125 – – 125 °C
Ratings
Parameter Symbol SMA6821MP/SLA6826M SMA6822MP/SLA6827M SMA6823MP/SLA6828M Unit Conditions
Control Supply Voltage Vcc 13.5 15 16.5 13.5 15 16.5 13.5 15 16.5 V Between VCC and COM
Control Supply Current Icc – 4 6 – 4 6 – 4 6 mA Vcc=15V
VIH – 2 2.5 – 2 2.5 – 2 2.5 Vcc=15V, Output:ON
Input Voltage V
VIL 1 1.5 – 1 1.5 – 1 1.5 – Vcc=15V, Output:OFF
Input Voltage Hysteresis Width VIhys – 0.5 – – 0.5 – – 0.5 – V Vcc=15V
IIH – 50 100 – 50 100 – 50 100 Vcc=15V, VIN=5V
Input Current µA
IIL – – 2 – – 2 – – 2 Vcc=15V, VIN=0V
VUVHL 9.0 10.0 11.0 9.0 10.0 11.0 9.0 10.0 11.0
Undevoltage Lock Out Between VB and U (V, W)
VUVHH 9.5 10.5 11.5 9.5 10.5 11.5 9.5 10.5 11.5 V
(high side)
VUVhys – 0.5 – – 0.5 – – 0.5 –
VUVLL 10.0 11.0 12.0 10.0 11.0 12.0 10.0 11.0 12.0
Undevoltage Lock Out Between VCC and COM
VUVLH 10.5 11.5 12.5 10.5 11.5 12.5 10.5 11.5 12.5 V
(low side)
VUVhys – 0.5 – – 0.5 – – 0.5 –
VFOL 0 – 1.0 0 – 1.0 0 – 1.0
FO Pin Output Voltage V Vcc=15V
VFOH 4.0 – 5.5 4.0 – 5.5 4.0 – 5.5
Overheat detection threshold TDH 135 150 165 135 150 165 135 150 165
°C Vcc=15V
Overheat detection release threshold TDL 105 120 135 105 120 135 105 120 135
Regulator output voltage VREG 6.75 7.5 8.25 6.75 7.5 8.25 6.75 7.5 8.25 V IREG=35mA
Boot Diode Forward Voltage VFBD – 1.1 1.3 – 1.1 1.3 – 1.1 1.3 V IF=0.15A
Boot Diode Series Resistance RBD – 22 – – 22 – – 22 – Ω
MOSFET Output Withstand Voltage VDSS 250 – – 500 – – 500 – – V Vcc=15V, ID=100µA, VIN=0V
MOSFET Output Leakage Current IDSS – – 100 – – 100 – – 100 µA Vcc=15V, VDS=500V (250V for SMA6821MP/SLA6826M), VIN=0V
MOSFET DC On Resistance RDS(ON) – 1.4 1.8 – 3.6 4.0 – 2.0 2.4 Ω Vcc=15V, ID=1.5A (1.0A for SMA6822MP/SLA6827M), VIN=5V
Diode Forward Voltage VSD – 1.0 1.5 – 1.0 1.5 – 1.0 1.5 V Vcc=15V, ID=1.5A (1.0A for SMA6822MP/SLA6827M), VIN=0V
Diode Reverse Recovery Time trr – 50 – 75 75 ns di/dt=100A/µs
td(on) – 650 – – 550 – – 650 –
tr – 100 – – 100 – – 100 –
High Side Switching Time ns
td(off) – 370 – – 420 – – 520 –
tf – 10 – – 30 – – 50 – VDC=280V, Vcc=15V, VIN=0 to 5V, Inductive load
td(on) – 600 – – 570 – – 700 – ID=1.5A (1.0A for SMA6822MP/SLA6827M)
tr – 100 – – 100 – – 100 –
Low Side Switching Time ns
td(off) – 300 – – 450 – – 580 –
tf – 10 – – 30 – – 40 –
136 ICs
SMA6820MP Series/SLA6820M Series
■Internal Block Diagram ■Typical Connection Diagram
1 2 3
10
VB1 VB2 VB3
4
VCC1 HO1
11
ZD HS1
5V
VB1 VB2 VB3
Rup1 HO2
SD1 12
VD HS2
HIN1
VBB1
HIN2
HIN3 HO3
VCC1 VBB2
11
UVLO UVLO UVLO UVLO COM1 HS3
HVIC 13
HIN1
Input High Side
HIN2 Logic Level Shift Driver 23
VCC2
HIN3
ZD
COM1
LO1
U
V 17
OCL
VCC2 W1
W2 20
7.5V Thermal LIN1
VREG
Reg. UVLO Detect 19
LIN2
LO2
18 16
LIN3
LIN1
Input Low Side
LIN2 Logic Driver
LIN3 RR
LO3
VRC
LS2 15
COM2 RC 14
5V RS
LS1
FO CC Rup2
22
SD2
21
COM2
LVIC
15V
The input pulldown resistor is built into an IC (about 100 kΩ). If the input
is expected to be unstable or fluctuate widely, however, it needs to be
reinforced with an external resistor.
Attach capacitors near IC. Attach a ceramic capacitor in parallel with the
electrolytic capacitor if too much noise is generated.
■External Dimensions (ZIP24 [SMA24Pin/SLA24Pin]) (Unit : mm)
31±0.2
4±0.2
Gate burr
Gate burr
10.2±0.2
JAPAN Lot No.

5±0.5
JAPAN Lot No.

1.2±0.1
Part No.
(Measured at the root) Part No. (Measured at the root)
9.5 +0.7
–0.5
R-end
(4.5)

0.6 +0.15
–0.05
0.5 +0.15
)
R1
23 X P1.27±0.5=29.21±0.6 –0.05
4-(
(Measured at the tip) 4.5±0.5

31.3±0.2 (Measured at the tip)
1 3 5 7 9 11 13 15 17 19 21 23
2 4 6 8 10 12 14 16 18 20 22 24
Forming No.2451 Forming No.2452

31±0.2
24.4±0.2 4.8±0.2
16.4±0.2 1.7±0.1
Gate burr φ 3.2±0.15 X 3.8
31±0.2
φ 3.2±0.15
24.4±0.2 4.8±0.2
16±0.2
12.9±0.2
JAPAN 16.4±0.2 1.7±0.1

9.9±0.2
Part No.
5±0.5
2.45±0.2 φ3.2±0.15 φ3.2±0.15x3.8

Lot No. (Measured at the root)
4-(R1)
9.5 +0.7
–0.5
(10.5)
R-end
16±0.2
12.9±0.2
2.2±0.6
9.9±0.1
2.45±0.1
0.6 +0.15
–0.05 0.5 +0.15 (Measured at the root)
(4.5)
–0.05
23 X P1.27±0.7=29.21±1 4.5±0.7
+0.2
0.6 –0.1
2.2±0.6
0.5±0.1
31.3±0.2 3±0.3
(4.4)
(Including the resin burr) 23xP1.27±0.2=29.21±0.5 (Measured at the tip)

2 4 6 8 10 12 14 16 18 20 22 24
1 3 5 7 9 11 13 15 17 19 21 23

ICs 137
1-2-6 High Voltage 3-Phase Motor Driver IPMs
SMA6860M Series/SLA6860M Series

• A package of 6 MOSFET units for 3-phase
Ratings
bridge, pre-drive (HVIC, LVIC), and 3 limiting Parameter Symbol Unit Conditions
SMA6861M SMA6862M SMA6863M SLA6868M
resistor boot diodes
MOSFET Output Breakdown Voltage VDSS 250 500 V Vcc=15V,VIN=0V
• High side drive employed using bootstrap Control Supply Voltage (VCC) VCC 20 V Between VCC and COM
method Control Supply Voltage (boot) VBS 20 V Between VB and HS (U, V, W)
• Built-in undervoltage lock out circuit (UVLO) Output Current (continuous) Io 2.0 1.5 2.5 A
• Built-in overcurrent protection circuit (OCP) Output Current (pulse) Iop 4 3 5 A PW≤100µs, duty=1%
Input Voltage VIN –0.5 to +7 V
• Built-in Thermal Shut Down (TSD)
Power Dissipation PD 28 32.8 W Tc=25°C
• Built-in current limiter circuit (used when there Thermal Resistance (Junction to Case) θj-c 4.46 3.8 °C/W When all the elements are operating
is an external short) Thermal Resistance (Junction to Ambient Air) θj-a 31.25 27.7 °C/W When all the elements are operating
• Built-in error signal output function (H-side: Operating Case Temperature Top –20 to +100 °C
UVLO, L-side: UVLO, TSD, OCP) Junction Temperature (Power part) Tch +150 °C
• SIP 24-pin package (SLA has an AL heatsink.) Storage Temperature Tstg –40 to +150 °C

Ratings
Parameter Symbol SMA6861M SMA6862M SMA6863M/SLA6868M Unit Conditions
Control Supply Voltage VCC 13.5 – 16.5 13.5 – 16.5 13.5 – 16.5 V Between VCC and COM
Minimum Input Pulse Width tw 0.5 – – 0.5 – – 0.5 – – µs
Junction Temperature Tj – – 125 – – 125 – – 125 °C

Ratings
Parameter Symbol SMA6861M SMA6862M SMA6863M/SLA6868M Unit Conditions
Control Supply Current1*1 Icc – 4.2 7 – 4.2 7 – 4.2 7 mA Vcc=15V
Boot Supply Current2*2 Ibs – 135 380 – 135 380 – 135 380 µA Vb=15V
VIH 2.4 2.9 3.4 2.4 2.9 3.4 2.4 2.9 3.4 Vcc=15V, Output:ON
Input Voltage V
VIL 1.6 2.1 2.6 1.6 2.1 2.6 1.6 2.1 2.6 Vcc=15V, Output:OFF
Undervoltage Lock Out VUVHL 9.0 10.0 11.0 9.0 10.0 11.0 9.0 10.0 11.0
V Between VB and U (V, W)
(high side) VUVHH 9.5 10.5 11.5 9.5 10.5 11.5 9.5 10.5 11.5
Undervoltage Lock Out VUVLL 10.0 11.0 12.0 10.0 11.0 12.0 10.0 11.0 12.0
V Between Vcc and COM
(low side) VUVLH 10.5 11.5 12.5 10.5 11.5 12.5 10.5 11.5 12.5
Thermal Protection Threshold TDH 120 135 150 120 135 150 120 135 150
°C Vcc=15V
Thermal Protection Cancellation Threshold TDL 100 115 130 100 115 130 100 115 130
Overcurrent Protection Threshold VTRIP 0.9 1 1.1 0.9 1 1.1 0.9 1 1.1 V VCC=15V
Overcurrent Protection Retention Time*3 tp – 4 – – 4 – – 4 – ms VRC=5V, RR=330kΩ, RC=0.01uF
Current Limiter Threshold VLIM 0.5035 0.53 0.55565 0.5035 0.53 0.55565 0.5035 0.53 0.55565 V VCC=15V
Boot Diode Forward Voltage VFBD – 1.0 1.3 – 1.0 1.3 – 1.0 1.3 V
IF=0.15A
Boot Diode Series Resistance RBD – 210 – – 210 – – 210 – Ω
MOS FET Output Breakdown Voltage VDSS 250 – – 500 – – 500 – – V Vcc=15V, ID=100µA, VIN=0V
MOS FET Output Leakage Current IDss – – 100 – – 100 – – 100 µA Vcc=15V, VDS=500V (250V for SMA6861M), VIN=0V
MOS FET DC ON Resistance RDS(ON) – 1.4 1.8 – 3.6 4.0 – 2.0 2.4 Ω Vcc=15V, ID=1A (1.5A for SMA6863M/SLA6868M), VIN=5V
Diode Forward Voltage VSD – 1.0 1.5 – 1.0 1.5 – 1.0 1.5 V Vcc=15V, ID=1A (1.5A for SMA6863M/SLA6868M), VIN=0V
Diode Reverse Recovery Time trr – 50 – 75 75 ns di/dt=100A/µs
td(on) – 660 – – 720 – – 790 –
tr – 25 – – 40 – – 60 –
Switching Time, High Side trr 690 110 115 ns
td(off) – 630 – – 670 – – 725 – VBB=300V (150V for SMA6861M),
tf – 10 – – 20 – – 20 – Vcc=15V, ID=2.0A (1.5A for
td(on) – 580 – – 600 – – 680 – SMA6862M, 2.5A for SMA6863M),
tr – 50 – – 40 – – 70 – VIN=0 to 5V
Switching Time, Low Side trr 95 120 120 ns
td(off) – 540 – – 555 – – 605 –
tf – 15 – – 20 – – 20 –
138 ICs
SMA6860M Series/SLA6860M Series
1 2 3
10
VB1 VB2 VB3
4
VCC1 HO1
11
ZD HS1
5V
Rup1 HO2
SD1 12
HS2
HIN1
HIN2
HIN3 HO3
11
COM1 HS3
HVIC 13
23
VCC2
ZD
LO1
17
OCL
20
LIN1
19 LO2
LIN2
18 16
LIN3
RR
LO3
VRC
15
RC 14
5V RS
CC Rup2
22
SD2
21
COM2
LVIC
15V
■External Dimensions (ZIP24 [SMA24Pin/SLA24Pin]) (Unit : mm)
31±0.2 4±0.2
Gate burr
Gate burr
10.2±0.2
JAPAN Lot No.

5±0.5
JAPAN Lot No.

1.2±0.1
Part No. (Measured at the root) Part No. (Measured at the root)
9.5 +0.7
–0.5
R-end
(4.5)

(Measured at the root) 0.6 +0.15
–0.05
0.5 +0.15
)
R1
23 X P1.27±0.5=29.21±0.6 –0.05
4-(
(Measured at the tip) 4.5±0.5

1 3 5 7 9 11 13 15 17 19 21 23
2 4 6 8 10 12 14 16 18 20 22 24

31±0.2
24.4±0.2 4.8±0.2
31±0.2
16.4±0.2 1.7±0.1
Gate burr 3.2±0.15 X 3.8
24.4±0.2 4.8±0.2
3.2±0.15
16.4±0.2 1.7±0.1
16±0.2
φ3.2±0.15 φ3.2±0.15x3.8
12.9±0.2
JAPAN
9.9±0.2
Part No.
5±0.5
2.45±0.2
4-(R1)
16±0.2
12.9±0.2
2.2±0.6
9.5 +0.7
–0.5
(10.5)
9.9±0.1
R-end 2.45±0.1
0.6 +0.15
–0.05 0.5 +0.15
(4.5)
–0.05
23 X P1.27±0.7=29.21±1
4.5±0.7
+0.2
0.6 –0.1
2.2±0.6

0.5±0.1
3±0.3
(4.4)

23xP1.27±0.2=29.21±0.5 (Measured at the tip)
2 4 6 8 10 12 14 16 18 20 22 24
1 3 5 7 9 11 13 15 17 19 21 23

ICs 139
1-2-6 High Voltage 3-Phase Motor Driver IPMs
SLA6805MP Output Element: IGBT

• A package including 6 units each of IGBT and
FRD for 3-phase bridge, and pre-drive (HVIC,
IGBT Output Voltage VCES 600 V Vcc=15V, VIN=0V
LVIC) Control Supply Voltage Vcc 20 V Between VCC and COM
• Best for driving a refrigerator compressors and Control Supply Voltage (bootstrap) VBS 20 V Between VB and HS (U, V, W)
dishwashing driers Output Current (continuous) Io 3 A
Output Current (pulse) Iop 6 A PW≤100µs, duty=1%
• High side drive of bootstrap method has been
employed.
Power Dissipation PD 32.8 W Tc=25°C
• Built-in undervoltage lock out (auto regression) 3.8 °C/W When all IGBT elements operating
Thermal Resistance (Junction to Case) θ j–c
5.4 °C/W When all FRD elements operating
• Built-in overcurrent protection circuit
Operating Case Temperature Top –20 to +100 °C
• Built-in fail signal output function (for when the Junction Temperature (Power part) Tch +150 °C
overcurrent protection circuit activates) Storage Temperature Tstg –40 to +150 °C

Ratings
min. typ. max.
Main Supply Voltage VBB – 300 450 V Between VBB and LS
Control Supply Voltage Vcc 13.5 – 16.5 V Between VCC and COM
Input Signal Dead Time tdead 1.5 – – µs
Minimum Input Pulse Width tw 0.5 – – µs
Junction Temperature Tj – – 125 °C
Ratings
min. typ. max.
Control Supply Voltage Vcc 13.5 15 16.5 V Between VCC and COM
Control Supply Current Icc – 4 6 mA Vcc=15V
VIH – 2 2.5 Vcc=15V, Output:ON
Input Voltage V
VIL 1 1.5 – Vcc=15V, Output:OFF
Input Voltage Hysteresis Width VIhys – 0.5 – V Vcc=15V
IIH – 50 100 Vcc=15V, VIN=5V
Input Current µA
IIL – – 2 Vcc=15V, VIN=0V
VUVHL 9.0 10.0 11.0
Undervoltage Lock Out
VUVHH 9.5 10.5 11.5 V Between VB and U (V, W)
(High Side)
VUVhys – 0.5 –
VUVLL 10.0 11.0 12.0
Undervoltage Lock Out
VUVLH 10.5 11.5 12.5 V Between VCC and COM
(Low Side)
VUVhys – 0.5 –
VFOL 0 – 1.0
FO Pin Output Voltage V Vcc=15V
VFOH 4.0 – 5.5
Overcurrent Protection Trip Voltage VTRIP 0.45 0.5 0.55 V Vcc=15V
Blanking Time tbk – 2 – us Vcc=15V
IGBT Output Withstand Voltage VCES 600 – – V Vcc=15V, Ic=100µA, VIN=0V
IGBT Output Leakage Current ICES – – 100 µA Vcc=15V, VCES=600V, VIN=0V
IGBT Output Saturation Voltage VCE(sat) – 1.75 2.1 V Vcc=15V, VIN=5V, IC=3A
Diode Forward Voltage VEC – 1.65 2 V Vcc=15V, VIN=0V, IC=3A
Diode Reverse Recovery Time trr – 50 – ns IF=3A, di/dt=100A/µs
td(on) – 315 –
tr – 55 –
Switching Time, High Side ns
td(off) – 455 –
tf – 175 – VBB=300V, Vcc=15V,
Ic=3A, VIN=0 to 5V,
td(on) – 430 – induvtive load
tr – 100 –
Switching Time, Low Side ns
td(off) – 410 –
tf – 190 –
140 ICs
SLA6805MP
Dboot Rboot
2 3 4 11
10
VB1 VB2 VB3
+
5
VCC1 HO1
HS1 1
The input pulldown resistor is built in IC (about 100 kΩ).
However, if the input is expected to be unstable or very
+
HO2 fluctuant, it needs to be reinforced with external resistor.
13
HS2 M
100 9
HIN1
DC Attach capacitors near IC. Attach a ceramic capacitor in
8 280V
7
HIN2
0.1uF
+
+
parallel with the electrolytic capacitor if too much noise
HIN3 HO3
Cs is generated.
6 12
COM1 HS3
HU HV HW 1nF
HVIC 14
23
VCC2
LO1
RC
Controller
20
LU LIN1 LO2
19 17
LV LIN2 RS
18 LIN3
LW
LO3
16
RCIN
15
CC 22
INT FO
21
COM COM2
LVIC RS
15V + 0.1uF
■External Dimensions (ZIP23 with Fin [SLA23Pin])
31±0.2
31±0.2
24.4±0.2 4.8±0.2
φ3.2±0.15 x 3.8
24.4±0.2
16.4±0.2 1.7±0.1
16.4±0.2 Gate burr
φ3.2±0.15 x 3.8 4.8±0.2 Gate burr
φ3.2±0.15 1.7±0.1
φ3.2±0.15
(Fin)
16±0.2
JAPAN
12.9±0.2
9.9±0.2
Part No. 2.45±0.2

16±0.2
9.5±0.2

5±0.5

12.9±0.2
JAPAN
2.2±0.7
2 (R') 2.45±0.5 Lot No.

Part No.
(Measured at the root) 4-(R1)
Lot No.
8.7±0.5
–0.5
8.7 +1
R-end
0.6±0.1 3±0.5 0.6

+0.15 0.5 +0.15
–0.05
(4.4)
(3.7)
–0.05
0.5±0.1
2.2±0.7
22 x P1.27±0.1=(27.94) (Measured at the tip) (Measured at the tip) 22 x P1.27±0.5=27.94±1

(Measured at the root) (Measured at the tip)
3.1±0.7 3.1±0.7
(Measured at the tip) (Measured at the tip)
31.3±0.2 31.3±0.2
(Including the resin burr) (Including the resin burr)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
1 3 5 7 9 11 13 15 17 19 21 23
2 4 6 8 10 12 14 16 18 20 22
Forming No. 2153 Forming No. 2151 Forming No. 2152
ICs 141
SLA6845M Support for 3 shunts, Output Element: IGBT

• A package including 6 units each of IGBT and
FRD for 3-phase bridge, and pre-drive (HVIC,
IGBT Output Breakdown Voltage VCES 600 V
LVIC) Main Supply Voltage VBB 450 V Between VBB and GND
• Best for driving a washing machine drying fan Control Supply Voltage Vcc 20 V Between VCC and COM
Control Supply Voltage (Bootstrap) VBS 20 V Between VB and HS (U, V, W)
motor
Output Current (continuous) Io 3 A Tc=25°C
• High side drive of bootstrap method has been Output Current (pulse) Iop 6 A PW<100µs
employed. Regulator Output Current IREG 35 mA
• Built-in undervoltage lock out circuit (auto Power Dissipation PD 32.8 W Tc=25°C, all IGBT elements in operation
regression) Thermal Resistance (IGBT Junction to Case) Rj-c(I) 3.8 °C/W All IGBT elements in operation
Thermal Resistance (FRD Junction to Case) Rj-c(F) 4.2 °C/W All FRD elements in operation
• Built-in thermal sensor (non-stop)
Thermal Resistance (Junction to Ambient Air) Rj-a 25 °C/W All IGBT and FRD elements in operation
• Built-in fail signal output function (when Operating Case Temperature TOP –20 to +100 °C
operating the thermal sensor and undervoltage Junction Temperature Tj 150 °C
lock out circuit) Storage Temperature Tstg –40 to +150 °C
• Support for 3-shunt current sense

• Built-in 7.5 V regulator output (35mA max.)

Ratings
min. typ. max.
Main Supply Voltage VBB – 300 450 V Between VBB and LS
Control Supply Voltage Vcc 13.5 – 16.5 V Between VCC and COM
Current Sense Resistance RS 0.3 Ω Between LS1 to 3 and COM2
Input Signal Dead Time tdead 1.5 – – µs Between LS1 to 3 and COM
Overcurrent Protection Time tocp 2.0 µs
Snubber Capacitor Cs 0.01 – 0.1 µF Between VCC and COM
Ratings
min. typ. max.
Control Supply Voltage Vcc 13.5 15 16.5 V Between VCC and COM
Control Supply Current Icc – 4 6 mA Vcc=15V, VIN=5V
VIH – 2 2.5 Vcc=15V, Output:ON
Input Voltage V
VIL 1 1.5 – Vcc=15V, Output:OFF
Input Voltage Hysteresis Width VIhys – 0.5 – V Vcc=15V
IIH – 50 100 Vcc=15V, VIN＝5V
Input Current µA
IIL – – 2 Vcc=15V, VIN=0V
VUVHL 9.0 10.0 11.0
Between VB and U (V, W)
Undervoltage Lock Out (high side) VUVHH 9.5 10.5 11.5 V
VUVhys – 0.5 – Hystersis
VUVLL 10.0 11.0 12.0
Between VCC and COM
Undervoltage Lock Out (low side) VUVLH 10.5 11.5 12.5 V
VUVhys – 0.5 – Hystersis
VFOL 0 – 1.0 Vcc=15V, IFO=–1mA
FO Terminal Output Voltage V
VFOH 4.0 – 5.5 Vcc=15V, IFO=1.6mA
TDH 135 150 165
Thermal Sense and Release Threshold TDL 105 120 135 °C Vcc=15V, No Fin, IREG=0mA
TDhys – 30 –
Regulator Output Voltage VREG 6.75 7.5 8.25 V IREG=35mA
IGBT Output Breakdown Voltage VCES 600 – – V Vcc=15V, Ic=1mA, VIN=0V
IGBT Output Leakage Current ICES – – 1 mA Vcc=15V, VCE=600V, VIN=0V
IGBT Output Saturation Voltage VCE(sat) – 1.75 2.1 V Vcc=15V, Ic=3A, VIN=5V
Diode Forward Voltage VF – 1.65 2.0 V Vcc=15V, IF=3A, VIN=0V
Diode Reverse Recovery Time trr 50 ns IF=3A, di/dt=100A/µs
td(on) – 315 –
tr – 50 –
High Side Switching Time ns
td(off) – 375 –
tf – 165 – VBB＝300V, Vcc＝15V, Ic＝3A, VIN＝0 to 5V,
td(on) – 325 – Inductive load
tr – 60 –
Low Side Switching Time ns
td(off) − 400 –
tf − 165 –
142 ICs
SLA6845M
Dboot Rboot
2 3 4 11
10
VB1 VB2 VB3
5
VCC1 HO1 +
1
HS1
HO2 +
VB1 VB2 VB3 13

HS2 M
9
HIN1
VBB1 8
HIN2
7 + +
HIN3 HO3
VCC1 VBB1 Cs
6 12
COM1 HS3
UVLO UVLO UVLO UVLO
HVIC 14
HIN1 23
Input High Side VCC2
HIN2
Logic Level Shift Driver
HIN3
COM1 LO1
U 24
V
Controller
VCC2 W1
20
W2 LIN1 LO2
7.5V Terminal
VREG
Reg. UVLO Detect 19 17
LIN2
18
LIN1 LIN3
Input
LIN2 Low Side Driver LO3
Logic 16
LIN3 VREG
15
CC
COM2 LS3
22
LS2 FO
FO LS1 21
COM2
RS
LVIC
+ 15V
The input pulldown resistor is built into the IC (about 100 kΩ).
However, if the input is expected to be unstable or to fluctuate greatly,
it needs to be reinforced using an external resistor.
Attach capacitors near the IC. Attach a ceramic capacitor in parallel

with the electrolytic capacitor if too much noise is generated.
31±0.2
24.4±0.2 4.8±0.2
16.4±0.2 1.7±0.1 31±0.2
Gate burr 3.2±0.15 X 3.8
3.2±0.15 24.4±0.2 4.8±0.2
16.4±0.2 1.7±0.1
16±0.2
12.9±0.2
JAPAN
φ3.2±0.15 φ3.2±0.15x3.8
9.9±0.2
Part No.
5±0.5
2.45±0.2
4-(R1)
9.5 +0.7
–0.5
16±0.2
(10.5)
12.9±0.2
2.2±0.6
R-end
9.9±0.1
2.45±0.1
0.6 +0.15
–0.05 0.5 +0.15
(4.5)
–0.05
23 X P1.27±0.7=29.21±1 4.5±0.7
(Measured at the tip) +0.2

0.6 –0.1
2.2±0.6
0.5±0.1
3±0.3
(4.4)
31.3±0.2 23xP1.27±0.2=29.21±0.5 (Measured at the tip)

2 4 6 8 10 12 14 16 18 20 22 24
1 3 5 7 9 11 13 15 17 19 21 23
Forming No. 2171 Forming No. 2175
ICs 143
1-2-6 High-voltage 3-phase Motor Driver IPMs
SCM1100M Series Support for 3-shunt, Output Element : IGBT

■Features
• Each half-bridge circuit consists of a pre-driver circuit that is completely independent from the others
• Protection against simultaneous high- and low-side turning on
• Bootstrap diodes with series resistors for suppressing inrush current are incorporated
• CMOS compatible input (3.3 to 5 V)
• Designed to minimize simultaneous current through both high- and low-side IGBTs by optimizing gate drive resistors
• UVLO protection with auto restart
• Overcurrent protection with off-time period adjustable by an external capacitor
• Fault (FO indicator) signal output at protection activation: UVLO (low side only), OCP, and STP
• Proprietary power DIP package
• UL Recognized Component (File No.: E118037)
■Absolute Maximum Ratings （Ta＝25℃）

Ratings
Parameter Symbol SCM1101M SCM1103M SCM1104M SCM1105MF SCM1106M SCM1110MF Unit Conditions
(SCM1101MF) (SCM1104MF) (SCM1106MF)
Supply Voltage VBB 450 450 450 450 450 450 V Between VBB and LS1 to LS3
Supply Voltage (Surge) VDC(Surge) 500 500 500 500 500 500 V Between VBB and LS1 to LS3
IGBT Output Withstand Voltage VCES 600 600 600 600 600 600 V VCC=15V,IC=1mA,VIN=0V
Control Supply Voltage VCC 20 20 20 20 20 20 V VCC1 to 3 and COM1 to COM3
Control Supply Voltage (Bootstrap) VBS 20 20 20 20 20 20 V VB1 to VB3 and HS (U,V,W)
Output Current (continuous) Io 10 5 8 15 10 15 Adc
Output Current (pulse) Iop 20 10 16 30 20 30 Adc T≤1ms
Input Voltage VIN –0.5 to +7 –0.5 to +7 –0.5 to +7 –0.5 to +7 –0.5 to +7 –0.5 to +7 V HIN1 to HIN3 or LIN1 to LIN3 and COM1 to COM3
FO Pin Voltage VFO 7 7 7 7 7 7 V FO1 to FO3 and COM1 to COM3
Power Dissipation PD 20.8(33.8) 19 20.2(32.9) 41.7 20.8(33.8) 41.7 W Tc=25°C while one IGBT element operates
Thermal Resistance (IGBT) R(j-c)Q 6(3.7) 6.3 6.2(3.8) 3 6(3.7) 3 °C/W Per IGBT element
Thermal Resistance (FRD) R(j-c)F 6.5(4.2) 6.5 6.5(4.2) 4 6.5(4.2) 4 °C/W Per FRD element
Operating Case Temperature TOP –20 to +100 –20 to +100 –20 to +100 –20 to +100 –20 to +100 –20 to +100 °C
Junction Temperature Tj 150 150 150 150 150 150 °C
Storage Temperature Tstg –40 to +150 –40 to +150 –40 to +150 –40 to +150 –40 to +150 –40 to +150 °C
Insulation Withstand Voltage Viso 2000 2000 2000 2000 2000 2000 V Between rear and lead pins, AC one minute

Ratings
Parameter Symbol SCM1100M Series Unit Conditions
min. typ. max.
Main Supply Voltage VDC – 300 400 V Between VBB and LS
Control Supply Voltage VCC,VBS 13.5 – 16.5 V
tINmin(on) 0.5 – – µs ON pulse
Minimum Input Pulse Width
tINmin(off) 0.5 – – µs OFF pulse
Input Signal Dead Time tdead 1.5 – – µs
FO Pull-up Resistor RFO 1 – 22 kΩ
CFO Capacitor Capacity CFO 1 – 10 nF
FO Pull-up Voltage VFO 4.5 – 5.5 V
Boot Capacitor CBOOT 10 – 220 uF
Shunt Resistor*1 RS 25.5 – – mΩ For Ip≤rated output current (pulse)
PWM Carrier Frequency fc – – 20*2 kHz
*1: The shunt resistance varies depending on the rated current.
*2: 10 for SCM1101M(F)/SCM1015MF
144 ICs
SCM1100M Series
Ratings
Parameter Symbol SCM1101M/SCM1101MF SCM1103M SCM1104M/SCM1104MF Unit Conditions
Control Supply Current ICC – 5 8 – 5 8 – 5 8 mA VCC=15V, 3 circuits total
Bootstrap Supply Current Ibs – 400 800 – 400 800 – 400 800 uA VB-HS=15V, 1 circuit
VIH – 2 2.5 – 2 2.5 – 2 2.5 VCC=15V, Output:ON
Input Voltage
VIL 1 1.5 – 1 1.5 – 1 1.5 – V VCC=15V, Output:OFF
Input Voltage Hysteresis Width VH – 0.5 – – 0.5 – – 0.5 – VCC=15V
IIH – 50 100 – 50 100 – 50 100 VCC=15V, VIN=5V
Input Current µA
IIL – – 2 – – 2 – – 2 VCC=15V, VIN=0V
VUVHL 10 – 12 10 – 12 10 – 12
Undervoltage Lock Out (high side)
VUVHH 10.5 – 12.5 10.5 – 12.5 10.5 – 12.5
V VCC=15V
VUVLL 10.5 – 12.5 10.5 – 12.5 10.5 – 12.5
Undervoltage Lock Out (low side)
VUVLH 11 – 13 11 – 13 11 – 13
VFOL – – 0.5 – – 0.5 – – 0.5 VCC=15V,VFO=5V
FO Pin Output Voltage V
VFOH 4.8 – – 4.8 – – 4.8 – – RFO=10kΩ
Overcurrent Protection Trip Voltage VTRIP 0.46 0.5 0.54 0.46 0.5 0.54 0.46 0.5 0.54 V VCC=15V
Overcurrent Protection Hold Time tP 2 – – 2 – – 2 – – ms VCC=15V, CFO=2.2nF
Blanking Time tbk – 2 – – 2 – – 2 – µs VCC=15V
IGBT Output Withstand Voltage VCES 600 – – 600 – – 600 – – V VCC=15V, IC=1mA, VIN=0V
IGBT Output Leakage Current ICES – – 1 – – 1 – – 1 mA VCC=15V, VCE=600V, VIN=0V
IGBT Output Saturation Voltage VCE(sat) – 1.75 2.2 – 1.7 2.1 – 1.75 2.2 V VCC=15V, IC=rated output current (continuous) VIN=5V
Boot Diode Forward Voltage VF – 1.7 2.2 – 1.4 2 – 1.6 2.2 V VCC=15V, IF=rated output current (continuous), VIN=0V
Boot Diode Leakage Current IIB – 5 10 – 5 10 – 5 10 µA VR=600V
Boot Diode Recovery Time trr – 70 – – 70 – – 70 – ns IF/IRP=100mA/100mA
Boot Diode Series Resistance RB 17.6 22 26.4 17.6 22 26.4 17.6 22 26.4 Ω
td(on) – 320 – – 340 – – 360 –
VDC=300V, V CC=15V
tr – 50 – – 60 – – 70 – IC=10A(SCM1101M), IC=5A(SCM1103M),
High Side Switching Time trr – 80 – – 80 – – 80 – ns IC=8A(SCM1104M)
td(off) – 560 – – 430 – – 560 – HIN=0 to 5V
tf – 210 – – 240 – – 210 – Inductive load
td(on) – 350 – – 380 – – 420 – VDC=300V, V CC=15V
Low Side Switching Time trr – 140 – – 100 – – 140 – ns IC=8A(SCM1104M)
td(off) – 610 – – 500 – – 630 – HIN=0 to 5V
Ratings
Parameter Symbol SCM1105MF SCM1106M/SCM1106MF SCM1110MF Unit Conditions
Control Supply Current ICC – 5 8 – 5 8 – 5 8 mA VCC=15V, 3 circuits total
Bootstrap Supply Current Ibs – 400 800 – 400 800 – 400 800 uA VB-HS=15V, 1 circuit
VIH – 2 2.5 – 2 2.5 – 2 2.5 VCC=15V, Output:ON
Input Voltage
VIL 1 1.5 – 1 1.5 – 1 1.5 – V VCC=15V, Output:OFF
Input Voltage Hysteresis Width VH – 0.5 – – 0.5 – – 0.5 – VCC=15V
IIH – 50 100 – 50 100 – 50 100 VCC=15V, VIN=5V
Input Current µA
IIL – – 2 – – 2 – – 2 VCC=15V, VIN=0V
VUVHL 10 – 12 10 – 12 10 – 12
Undervoltage Lock Out (high side)
VUVHH 10.5 – 12.5 10.5 – 12.5 10.5 – 12.5
V VCC=15V
VUVLL 10.5 – 12.5 10.5 – 12.5 10.5 – 12.5
Undervoltage Lock Out (low side)
VUVLH 11 – 13 11 – 13 11 – 13
VFOL – – 0.5 – – 0.5 – – 0.5 VCC=15V, VFO=5V
FO Pin Output Voltage V
VFOH 4.8 – – 4.8 – – 4.8 – – RFO=10kΩ
Overcurrent Protection Trip Voltage VTRIP 0.46 0.5 0.54 0.46 0.5 0.54 0.46 0.5 0.54 V VCC=15V
Overcurrent Protection Hold Time tP 2 – – 2 – – 2 – – ms VCC=15V,CFO=2.2nF
Blanking Time tbk – 2 – – 2 – – 2 – µs VCC=15V
IGBT Output Withstand Voltage VCES 600 – – 600 – – 600 – – V VCC=15V, IC=1mA, VIN=0V
IGBT Output Leakage Current ICES – – 1 – – 1 – – 1 mA VCC=15V, VCE=600V, VIN=0V
IGBT Output Saturation Voltage VCE(sat) – 1.75 2.2 – 2.2 2.6 – 2.2 2.6 V VCC=15V, IC=rated output current (continuous) VIN=5V
Boot Diode Forward Voltage VF – 1.75 2.2 – 1.7 2.2 – 1.75 2.2 V VCC=15V, IF=rated output current (continuous), VIN=0V
Boot Diode Leakage Current IIB – 5 10 – 5 10 – 5 10 µA VR=600V
Boot Diode Recovery Time trr – 70 – – 70 – – 70 – ns IF/IRP=100mA/100mA
Boot Diode Series Resistance RB 17.6 22 26.4 17.6 22 26.4 17.6 22 26.4 Ω
td(on) – 365 – – 320 – – 365 –
VDC=300V, VCC=15V
High Side Switching Time trr – 90 – – 80 – – 90 – ns IC=15A(SCM1110MF)
td(off) – 690 – – 490 – – 650 – HIN=0 to 5V
td(on) – 415 – – 350 – – 415 –
VDC=300V, VCC=15V
Low Side Switching Time trr – 115 – – 140 – – 115 – ns IC=15A(SCM1110MF)
td(off) – 790 – – 540 – – 755 – HIN=0 to 5V
ICs 145
■Internal Block Diagram (Single Circuit)
HS
VB VBB
VB
VCC
VCC UV
HO
Detect
Drive
HIN
Input Corcuit
HIN Logic Level
LIN & Shift U,V,W
LIN HS
Shoot
Through
Prevention UV
Detect
COM
Drive LD
COM Corcuit
FO FO O.C.
Protect LS
LS
CFO
CFO HVIC
8 SCM1100M
7 31
CBOOT
VB
6 VCC
UV
Detect HO
Drive
5 HIN Input Circuit The input pulldown resistor is built in IC (about 100 kΩ).
Logic Level
3 LIN 32
& Shift However, if the input is expected to be unstable or very
Shoot HS
Through fluctuant, it needs to be reinforced with external resistor.
Prevention UV
Detect
4 COM Drive
Circuit LO Attach capacitors near IC. Attach a ceramic capacitor in
1 FO O.C. 33
Protect parallel with the electrolytic capacitor if too much noise is
CFO LS
2 generated.
HVIC1
16
15 28
CBOOT
VB
14 VCC UV
Detect HO
Input Drive
13 HIN Circuit
Logic Level
11 LIN & Shift 29
Controller
Shoot M
HS
Through
Prevention
UV
Detect
12 COM Drive
Circuit LO
9 FO O.C. 30
Protect
CFO LS
10
HVIC2
24
23 25
CBOOT
VB
22 VCC UV
Detect HO
Drive
21 HIN Input Circuit
Logic Level
19 LIN & Shift 26
Shoot HS
Through
VFO Prevention
UV
Detect
20 COM Drive
RFO Circuit LO VBB
17 FO O.C. 27
Protect
CFO LS
18
HVIC3
CN VCC
RS
CFO
146 ICs
SCM1100M Series
■External Dimensions (SCM) (Unit : mm)
Planar state diagram

Pitch tolerance by the lead root size: ±0.1
(lead center)
Root
(lead center)
(lead center) (lead center)

Part No. Lot No.
JAPAN
(lead center)
B lead cross-section (S=9)

Pitch tolerance by the lead root size: ±0.1 C lead cross-section (S=9)
(lead center)
A lead cross-section (S=9) D lead cross-section (S=9)

(Size after solder dip)
Without Fin Forming No. 2551

(SCM1100M) Product Mass: Approx. 12.6g
Pitch tolerance by the lead root size: ±0.1 Planar state diagram
(lead center)
Root
(lead center)
(lead center) (lead center)
Part No. Lot No.

JAPAN
(lead center)
B lead cross-section (S=9)

C lead cross-section (S=9)
Pitch tolerance by the lead root size: ±0.1
(lead center)
A lead cross-section (S=9) D lead cross-section (S=9)

(Size after solder dip)
With Fin Forming No. 2552

(SCM1100MF) Product Mass: Approx. 13.5g
ICs 147
148 ICs
Transistors
2
○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○
Ordering Information & Standard Packing Quantities .............. 150

Application Note ............................................................................... 152
2-1 Transistors ............................................................................. 153
Selection Guide .................................................................... 153
• VCEO -IC ............................................................................. 153
• Audio Transistors ............................................................ 154
• Switching Transistors ..................................................... 155
Specifications List by Part Number .................................. 156
2-2 MOS FETs .............................................................................. 162
Selection Guide .................................................................... 162
• By VDSS ............................................................................ 162
2-3 IGBT ........................................................................................ 166
Selection Guide .................................................................... 166
• By VCES ............................................................................ 166
2-4 Transistor and MOS FET Arrays ....................................... 170
Specifications List by Application .................................... 172
• Sink Driver Arrays ........................................................... 172
• Source Driver Arrays ...................................................... 174
• Motor Driver Arrays ........................................................ 176
Package Type (Dimensions) ........................................................... 183
○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○
2 Transistors
Product Name Package Product Name Package
Bulk Taping Bulk Taping
2SA1186 TO3P 500(Box)/1080(Stick) – 2SC3263 TO3P 500(Box)/1080(Stick) –
2SA1215 MT200 250(Box) – 2SC3264 MT200 250(Box) –
2SA1216 MT200 250(Box) – 2SC3284 TO3P 500(Box)/1080(Stick) –
2SA1295 MT200 250(Box) – 2SC3519A TO3P 500(Box)/1080(Stick) –
2SA1386 TO3P 500(Box)/1080(Stick) – 2SC3851 TO220F 1000(Box)/3750(Stick) –
2SA1386A TO3P 500(Box)/1080(Stick) – 2SC3851A TO220F 1000(Box)/3750(Stick) –
2SA1488 TO220F 1000(Box)/3750(Stick) – 2SC3852 TO220F 1000(Box)/3750(Stick) –
2SA1488A TO220F 1000(Box)/3750(Stick) – 2SC3852A TO220F 1000(Box)/3750(Stick) –
2SA1493 MT200 250(Box) – 2SC3857 MT200 250(Box) –
2SA1494 MT200 250(Box) – 2SC3858 MT200 250(Box) –
2SA1567 TO220F 1000(Box)/3750(Stick) – 2SC3927 TO3P 500(Box)/1080(Stick) –
2SA1668 TO220F 1000(Box)/3750(Stick) – 2SC4131 TO3PF 500(Box)/1080(Stick) –
2SA1673 TO3PF 500(Box)/1080(Stick) – 2SC4138 TO3P 500(Box)/1080(Stick) –
2SA1695 TO3P 500(Box)/1080(Stick) – 2SC4300 TO3PF 500(Box)/1080(Stick) –
2SA1725 TO220F 1000(Box)/3750(Stick) – 2SC4301 TO3PF 500(Box)/1080(Stick) –
2SA1746 TO3PF 500(Box)/1080(Stick) – 2SC4304 TO220F 1000(Box)/3750(Stick) –
2SA1859A TO220F 1000(Box)/3750(Stick) – 2SC4382 TO220F 1000(Box)/3750(Stick) –
2SA1860 TO3PF 500(Box)/1080(Stick) 2SC4388 TO3PF 500(Box)/1080(Stick) –
2SA1907 TO3PF 500(Box)/1080(Stick) – 2SC4445 TO3PF 500(Box)/1080(Stick) –
2SA2151A TO3P 500(Box)/1080(Stick) – 2SC4495 TO220F 1000(Box)/3750(Stick) –
2SB1257 TO220F 1000(Box)/3750(Stick) – 2SC4518 TO220F 1000(Box)/3750(Stick) –
2SB1258 TO220F 1000(Box)/3750(Stick) – 2SC4518A TO220F 1000(Box)/3750(Stick) –
2SB1259 TO220F 1000(Box)/3750(Stick) – 2SC4546 TO220F 1000(Box)/3750(Stick) –
2SB1351 TO220F 1000(Box)/3750(Stick) – 2SC4706 TO3P 500(Box)/1080(Stick) –
2SB1382 TO3PF 500(Box)/1080(Stick) – 2SC4883 TO220F 1000(Box)/3750(Stick) –
2SB1383 TO3P 500(Box)/1080(Stick) – 2SC4883A TO220F 1000(Box)/3750(Stick) –
2SB1420 TO3P 500(Box)/1080(Stick) – 2SC4886 TO3PF 500(Box)/1080(Stick) –
2SB1559 TO3P 500(Box)/1080(Stick) – 2SC5071 TO3P 500(Box)/1080(Stick) –
2SB1560 TO3P 500(Box)/1080(Stick) – 2SC5099 TO3PF 500(Box)/1080(Stick) –
2SB1570 MT200 250(Box) – 2SC5100 TO3PF 500(Box)/1080(Stick) –
2SB1587 TO3PF 500(Box)/1080(Stick) – 2SC5101 TO3PF 500(Box)/1080(Stick) –
2SB1588 TO3PF 500(Box)/1080(Stick) – 2SC5130 TO220F 1000(Box)/3750(Stick) –
2SB1647 TO3P 500(Box)/1080(Stick) – 2SC5287 TO3P 500(Box)/1080(Stick) –
2SB1648 MT200 250(Box) – 2SC6011 TO3P 500(Box)/1080(Stick) –
2SB1649 TO3PF 500(Box)/1080(Stick) – 2SC6011A TO3P 500(Box)/1080(Stick) –
2SB1686 TO220F 1000(Box)/3750(Stick) – 2SC6145 TO3P 500(Box)/1080(Stick) –
2SB1687 TO3PF 500(Box)/1080(Stick) – 2SD1785 TO220F 1000(Box)/3750(Stick) –
2SC2837 TO3P 500(Box)/1080(Stick) – 2SD1796 TO220F 1000(Box)/3750(Stick) –
2SC2921 MT200 250(Box) – 2SD2014 TO220F 1000(Box)/3750(Stick) –
2SC2922 MT200 250(Box) – 2SD2015 TO220F 1000(Box)/3750(Stick) –
150 Transistors
2 Transistors
Product Name Package Product Name Package
Bulk Taping Bulk Taping
2SD2016 TO220F 1000(Box)/3750(Stick) – FKV550T TO220F 3750(Stick) –
2SD2017 TO220F 1000(Box)/3750(Stick) – FKV575 TO220F 3750(Stick) –
2SD2045 TO3PF 500(Box)/1080(Stick) – FKV660S TO220S(Surface-mount) – 1000
2SD2081 TO220F 1000(Box)/3750(Stick) – MGD623N TO3P 1080(Stick) –
2SD2082 TO3PF 500(Box)/1080(Stick) – MGD623S TO3P 1080(Stick) –
2SD2083 TO3P 500(Box)/1080(Stick) – SDA05 PS16Pin – 1200
2SD2141 TO220F 1000(Box)/3750(Stick) – SDC03 PS16Pin – 1200
2SD2389 TO3P 500(Box)/1080(Stick) – SDC04 PS16Pin – 1200
2SD2390 TO3P 500(Box)/1080(Stick) – SDC06 PS16Pin – 1200
2SD2401 MT200 250(Box) – SDC07 PS16Pin – 1200
2SD2438 TO220F 1000(Box)/3750(Stick) – SDH02 PS16Pin – 1200
2SD2439 TO3PF 500(Box)/1080(Stick) – SKP202 TO263(Surface-mount) – 800
2SD2560 TO3P 500(Box)/1080(Stick) – SKP253 TO263(Surface-mount) – 800
2SD2561 MT200 250(Box) – SLA4xxx SLA12Pin 250(Box)/1080(Stick) –
2SD2562 TO3PF 500(Box)/1080(Stick) – SLA4xxx SLA21Pin 250(Box)/1080(Stick) –
2SD2641 TO3P 500(Box)/1080(Stick) – SLA5xxx SLA12Pin 250(Box)/1080(Stick) –
2SD2642 TO220F 1000(Box)/3750(Stick) – SLA5xxx SLA15Pin 250(Box)/1080(Stick) –
2SD2643 TO3PF 500(Box)/1080(Stick) – SLA6xxx SLA12Pin 250(Box)/1080(Stick) –
2SK2420 TO220F 3750(Stick) – SMA4xxx SMA12Pin 1440(Stick) –
2SK2079 TO3PF 1080(Stick) – STAxxx STA8Pin 1000(Box)/4050(Stick) –
2SK2778 TO220F 3750(Stick) – STAxxx STA10Pin 3200(Box)/3300(Stick) –
2SK2779 TO220F 3750(Stick) – STD01N TO3P-5 500(Box)/1080(Stick) –
2SK2803 TO220F 3750(Stick) – STD01P TO3P-5 500(Box)/1080(Stick) –
2SK2848 TO220F 3750(Stick) – STD03N TO3P-5 500(Box)/1080(Stick) –
2SK2943 TO220F 3750(Stick) – STD03P TO3P-5 500(Box)/1080(Stick) –
2SK3003 TO220F 3750(Stick) –
2SK3004 TO220F 3750(Stick) –
2SK3199 TO220F 3750(Stick) –
2SK3710 TO220S(Surface-mount) – 1000
2SK3711 TO3P 1080(Stick) –
2SK3801 TO3P 1080(Stick) –
2SK3851 TO3P 1080(Stick) –
EKV550 TO220 1000(Stick) –
FGT312 TO220F 3750(Stick) –
FGM603 TO3PF 1080(Stick) –
FKP202 TO220F 3750(Stick) –
FKP250A TO3PF 1080(Stick) –
FKP330C TO3PF 1080(Stick) –
FKV460S TO220S(Surface-mount) – 1000
FKV550N TO220F 3750(Stick) –
Transistors 151
2 Transistors
Application Note
Since reliability can be affected adversely by improper storage environ-
ment or handling methods during Characteristic tests, please observe the ■ Heatsink
following cautions.
A larger contact area between the device and the heatsink is required for
more effective heat radiation. To ensure a larger contact area, minimize
■ Cautions for Storage mounting holes. And select a heatsink with a surface smooth enough and
free from burrs and slivers.
●Ensure that storage conditions comply with the normal temperature (5 to
35°C) and the normal relative humidity (around 40 to 75%), and avoid
storage locations that experience high temperature and humidity, or ■ Soldering Temperature
extreme changes in temperature or humidity.
In general, the device mounted on a printed circuit board is subjected to
●Avoid locations where dust or harmful gases are present, and avoid
high temperatures from flow solder in a solder bath, or, from a soldering
direct sunlight.
iron at hand soldering.
●Reinspect the devices for rust in leads and solderability after stored for a
The testing method and test conditions (JIS-C-7021 standards) for a
long time.
device's heat resistance to soldering are:
At a distance of 1.5mm from the device's main body, apply 260°C for 10
■ Cautions for Characteristic Tests and Handling seconds, and 350°C for 3 seconds.
Please observe these limits and finish soldering in as short a time as
On characteristics test at incoming inspection, etc, take good care to avoid possible.
the surge voltages from the test equipment, the short circuit at terminals,
or the wrong connection.
■ Antistatic Measure for Power MOS FET Arrays
■ Silicone Grease ●When handling the device, body grounding is necessary. Wear a wrist
strap with a 1 MΩ resistor close to the body in the wrist strap to prevent
When using a heatsink, please coat thinly and evenly the back surface of electric shock.
the device and both surfaces of the insulating plate with silicone grease to ●Use a conductive tablemat and a floor mat at the device-handling
lower the thermal resistance between the device and the heatsink. workbench and ground them properly.
Please select proper silicone grease carefully since the oil in some grease ●When using a curve tracer or other measuring equipment, ground them
products may penetrate the device and result in an extremely short device as well.
life. ●In soldering, ground the soldering iron tip and the solder bath to prevent
Recommended Silicone Grease a leakage voltage from damaging the device.
• G-746 (Shin-Etsu Chemical) ●As an antistatic measure for device containers, use Sanken shipping
• YG6260 (Momentive Performance Materials Inc.) containers or a conductive containers, or use aluminum foils.
• SC102 (Dow Corning Toray Silicone) Since reliability can be affected adversely by improper storage
environment or handling methods during Characteristic tests, please
observe the following cautions.
■ Mounting Torque
When mounting torque is insufficient, thermal resistance increases, and so
heat radiation effect is decreased. When the torque is excessive, the
screw may be broken, the heatsink may be deformed, and the device
frame may be distorted, resulting in the device damage. Recommended
mounting torque per package is as follows:
● Mounting Torque Table

Package Screw Torque
TO-220 (MT-25)
0.490 to 0.686 N•m (5 to 7kgf•cm)
TO-220F (FM20)
TO-3P (MT-100)
TO-3PF(FM100 ) 0.686 to 0.882 N•m (7 to 9kgf•cm)
MT-200 (fixed at two points)
SIP with Fin (SLA) 0.588 to 0.784 N•m (6 to 8kgf•cm)
* When the surface of a heatsink where Full Mold package is to be
mounted is not flat due to the burred metal bracket for screwing around
the mounting hole of the heatsink, the resin of the package might be
cracked even if the torque is lower than the recommended value.
* When a screw is fastened with an air driver for the Full Mold package, a
large impact is generated at the time of stop, and the resin may crack
even if the torque is lower than the recommended value. An electric
driver, therefore, should be used instead of an air driver.
152 Transistors
2-1 Transistors
Selection Guide
V CEO-I C
800 C4304 C4300 C4301
C4445
600 C4706
550 C4518 C3927
C4518A
C5287
400 C5130 C4546 C4138 C5071 C4140
380 D2141
250 D2017
230 A1294 A1295
C3263 C3264
A2151A
C6011A
2SA2223
2SC6145
200 A1668 D2016 A1493 A1494
C4382 C3857 C3858
A2151
C6011
180 A1859A A1386A A1216
C4883A A1492 C2922
A1673
Collector–Emitter Voltage VCEO(V)
C3519A
C3856
C4388
160 A1215
A1386
C2921
C3519
150 A1667 B1559 A1186 B1570 A1303 B1647 B1648
A1859 B1587 B1560 D2401 A1860 B1649 D2561
C4381 D2389 B1588 C3284 D2560
C4883 D2438 C2837 C4886 D2562
D2390
D2439
140 A1695
A1909
C4468
C5101
120 D2015 D1785 C3835 A1694 B1259 B1382 B1383
D2045 C4153 A1908 D2081 B1420 D2083
C4467 D2082
C5100
110 D2641
D2642
D2643
100 B1258
80 C3852A A1488A A1693
C3851A A1725
D2014 A1907
C4466
C4511
C5099
60 C3852 A1488 A1568
B1257 B1351
C3851
D1796
50 C4495 C4024 A1567 C4131
A1746
2 3 4 5 6 7 8 10 12 14 15 16 17 18 25
Collector Current IC(A)
Transistors 153
2-1 Transistors
Audio Transistors
■Output Transistors
Chip
Pc Ic VCEO
Single Transistors Package
(W) (A) (V) Darlington
General LAPT
30 6 80 2SA1725 2SC4511 TO-220F (FM20)
6 80 2SA1693 2SC4466 TO-3P (MT-100)
60
6 80 2SA1907 2SC5099 TO-3PF (FM100)
8 120 2SA1908 2SC5100 TO-3PF (FM100)
75
8 150 2SB1587 2SD2438 TO-3PF (FM100)
8 120 2SA1694 2SC4467 TO-3P (MT-100)
10 140 2SA1909 2SC5101 TO-3PF (FM100)
80 8 150 2SB1559 2SD2389 TO-3P (MT-100)
10 150 2SB1588 2SD2439 TO-3PF (FM100)
14 150 2SA1860 2SC4886 TO-3PF (FM100)
15 150 2SB1649 2SD2562 TO-3PF (FM100)
85
15 180 2SA1673 2SC4388 TO-3PF (FM100)
10 140 2SA1695 2SC4468 TO-3P (MT-100)
100 10 150 2SA1186 2SC2837 TO-3P (MT-100)
10 150 2SB1560 2SD2390 TO-3P (MT-100)
125 14 150 2SA1303 2SC3284 TO-3P (MT-100)
15 150 2SB1647 2SD2560 TO-3P (MT-100)
15 160 2SA1386 2SC3519 TO-3P (MT-100)
130 15 180 2SA1492 2SC3856 TO-3P (MT-100)
15 180 2SA1386A 2SC3519A TO-3P (MT-100)
15 230 2SA1294 2SC3263 TO-3P (MT-100)
12 150 2SB1570 2SD2401 MT-200 (fixed at two points)
150 15 160 2SA1215 2SC2921 MT-200 (fixed at two points)
15 200 2SA1493 2SC3857 MT-200 (fixed at two points)
15 200 2SA2151 2SC6011 TO-3P (MT-100)
160 15 230 2SA2151A 2SC6011A TO-3P (MT-100)
15 230 2SA2223 2SC6145 TO-3P (MT-100)
17 150 2SB1648 2SD2561 MT-200 (fixed at two points)
200
LAPT: Multi-Emitter for High Frequency
■Output Transistors with Temperature Compensating Function (Refer to our Web site for applications)
Part Number Pc (W) IC (A) VCEO (V) Package
STD01P STD01N 100 10 150 TO3P-5pin
STD03P STD03N 160 15 160 TO3P-5pin
■Driver and Temperature Compensating Transistors

Part Number Pc (W) VCEO (V) Ic (A) hFE (min) fT (MHz) Package Remarks
2SC4495 25 50 3 500 40 TO-220F (FM20) For temperature compensation
2SA1859 2SC4883 20 150 2 60 60/120 TO-220F (FM20) Driver
2SA1859A 2SC4883A 20 180 2 60 60/120 TO-220F (FM20) Driver
Refer to our Web site for the hFE ranks.
154 Transistors
2-1 Transistors
Switching Transistors
■DC-DC Converter
VCBO VCEO IC PC
Part Number Package
(V) (V) (A) (W)
2SC4024 10 35 TO-220F
100 50
2SC4131 15 60 TO-3PF
2SC4153 30 TO-220F
200 120 7
2SC3835 70 TO-3P
■For AC100V Input

VCBO VCEO IC PC
Part Number Package
(V) (V) (A) (W)
2SC4138 10 80 TO-3P
2SC5071 500 400 12 100 TO-3P
2SC4140 18 130 TO-3P
2SC5130 5 30 TO-220F
600 400
2SC4546 7 30 TO-220F
■For AC200V Input

VCBO VCEO IC PC
Part Number Package
(V) (V) (A) (W)
2SC4518 35 TO-220F
5
2SC5287 550 80 TO-3P
2SC3927 10 120 TO-3P
2SC4706 600 14 130 TO-3P
900
2SC4304 35 TO-220F
3
2SC4445 60 TO-3PF
800
2SC4300 5 75 TO-3PF
2SC4301 7 80 TO-3PF
2SC4518A 1000 550 5 35 TO-220F
Transistors 155
2-1 Transistors
Specifications List by Part Number
Absolute Maximum Ratings

ICBO hFE
VCBO VCEO Ic Pc
Part Number Applications Conditions Conditions
VCB VCE Ic
(V) (V) (A) (W) (µA) min max
(V) (V) (A)
2SA1186 Audio, general-purpose –150 –150 –10 100 –100 –150 50 180 –4 –3
2SA1386A Audio, general-purpose –180 –180 –15 130 –100 –180 50 180 –4 –5
2SA1488 Audio, general-purpose –60 –60 –4 25 –100 –60 40 –4 –1
2SA1488A Audio, general-purpose –80 –80 –4 25 –100 –80 40 –4 –1
2SA1567 DC motor driver, chopper regulator, general-purpose –50 –50 –12 35 –100 –50 50 –1 –6
2SA1568 DC motor driver, chopper regulator, general-purpose –60 –60 ±12 35 –100 –60 50 –1 –6
2SA1667 TV vertical output, audio output driver, general-purpose –150 –150 –2 25 –10 –150 60 –10 –0.7
2SA1668 TV vertical output, audio output driver, general-purpose –200 –200 –2 25 –10 –200 60 –10 –0.7
2SA1746 Chopper regulator, switch, general-purpose –70 –50 –12 (Pulse –20) 60 –10 –70 50 –1 –5
2SA1859 Audio output driver, TV velocity modulation –150 –150 –2 20 –10 –150 60 240 –10 –0.7
2SA1859A Audio output driver, TV velocity modulation –180 –180 –2 20 –10 –180 60 240 –10 –0.7
2SA2151A Audio, general-purpose –230 –230 –15 160 –10 –230 50 180 –4 –3
2SB1257 Solenoid/relay/motor driver, general-purpose –60 –60 –4 (Pulse –6) 25 –10 –60 2000 –4 –3
2SB1351 Printer head/solenoid/relay/motor driver, general-purpose –60 –60 –12 (Pulse –20) 30 –10 –60 2000 –4 –10
2SB1382 Chopper regulator, DC motor driver, general-purpose –120 –120 –16 (Pulse –26) 75 –10 –120 2000 –4 –8
2SB1559 Audio, series regulator, general-purpose –160 –150 –8 80 –100 –160 5000 30000 –4 –6
156 Transistors
2-1 Transistors
Electrical Characteristics
VBE (sat)
VCE (sat) fT Switching Time Mass
Cob
Conditions Conditions ton tstg tf Complementary Package
(V) (V) Ic IB MHz VCE IE (g)
(µS) (µS) (µS) (pF)
max max (A) (A) (V) (A)
–2.0 –5 –0.5 60 –12 1 0.25typ 0.8typ 0.2typ 110typ 2SC2837 TO-3P (MT-100) 6.0
–2.0 –5 –0.5 50 –12 2 0.25typ 0.85typ 0.2typ 400typ 2SC2921 MT-200 18.4
–2.0 –5 –0.5 40 –12 2 0.3typ 0.7typ 0.2typ 500typ 2SC3519A TO-3P (MT-100) 6.0
–0.5 –2 –0.2 15 –12 0.2 0.25typ 0.75typ 0.25typ 90typ 2SC3851 TO-220F (FM20) 2.0
–0.5 –2 –0.2 15 –12 0.2 0.25typ 0.75typ 0.25typ 90typ 2SC3851A TO-220F (FM20) 2.0
–2.0 –5 –0.5 20 –12 0.5 0.6typ 0.9typ 0.2typ 500typ 2SC3856 TO-3P (MT-100) 6.0
–3.0 –10 –1 20 –12 0.5 0.3typ 0.9typ 0.2typ 400typ 2SC3857 MT-200 18.4
–2.5 –10 –1 20 –12 1 0.6typ 0.9typ 0.2typ 500typ 2SC3858 MT-200 18.4
–0.35 –6 –0.3 40 –12 0.5 0.4typ 0.4typ 0.2typ 330typ TO-220F (FM20) 2.0
–0.35 –6 –0.3 40 –12 0.5 0.4typ 0.4typ 0.2typ 330typ TO-220F (FM20) 2.0
–1.0 –0.7 –0.07 20 –12 0.2 0.4typ 1.5typ 0.5typ 60typ 2SC4381 TO-220F (FM20) 2.0
–1.0 –0.7 –0.07 20 –12 0.2 0.4typ 1.5typ 0.5typ 60typ 2SC4382 TO-220F (FM20) 2.0
–2.0 –5 –0.5 20 –12 0.5 0.6typ 0.9typ 0.2typ 500typ 2SC4388 TO-3PF (FM100) 6.5
–0.5 –2 –0.2 20 –12 0.5 0.18typ 1.1typ 0.21typ 150typ 2SC4511 TO-220F (FM20) 2.0
–0.5 –1.2 –5 –0.08 25 –12 1 0.5typ 0.6typ 0.3typ 400typ TO-3PF (FM100) 6.5
–1.0 –0.7 –0.07 60 –12 0.7 0.5typ 1typ 0.5typ 30typ 2SC4883 TO-220F (FM20) 2.0
–1.0 –0.7 –0.07 60 –12 0.7 0.5typ 1typ 0.5typ 30typ 2SC4883A TO-220F (FM20) 2.0
–2.0 –5 –0.5 50 –12 2 0.25typ 0.85typ 0.2typ 400typ 2SC4886 TO-3PF (FM100) 6.5
–0.5 –5 –0.5 20 –12 –0.5 – – – 450typ 2SC6011 TO-3P (MT-100) 6.0
–0.5 –5 –0.5 20 –12 –0.5 – – – 450typ 2SC6011A TO-3P (MT-100) 6.0
–0.5 –5 –0.5 35 –12 2 – – – 500typ 2SC6145 TP-3P (MT-100) 6.0
–1.5 –2.0 –3 –0.006 200 –12 0.2 0.4typ 0.8typ 0.6typ 75typ 2SD2014 TO-220F (FM20) 2.0
–1.5 –2.0 –10 –0.02 130 –12 1 0.7typ 1.5typ 0.6typ 170typ TO-220F (FM20) 2.0
–1.5 –2.5 –8 –0.016 50 –12 1 0.8typ 1.8typ 1typ 350typ 2SD2082 TO-3PF (FM100) 6.5
–1.8 –2.5 –12 –0.024 50 –12 1 1typ 3typ 1typ 230typ 2SD2083 TO-3P (MT-100) 6.0
–1.5 –2.5 –8 –0.016 50 –12 1 1typ 3typ 1typ 350typ TO-3P (MT-100) 6.0
–2.5 –3.0 –6 –0.006 65 –12 1 0.7typ 3.6typ 0.9typ 160typ 2SD2389 TO-3P (MT-100) 6.0
–2.5 –3.0 –7 –0.007 50 –12 2 0.8typ 3typ 1.2typ 230typ 2SD2390 TO-3P (MT-100) 6.0
–2.5 –3.0 –7 –0.007 50 –12 2 0.8typ 3typ 1.2typ 230typ 2SD2401 MT-200 18.4
–2.5 –3.0 –6 –0.006 65 –12 1 0.7typ 3.6typ 0.9typ 160typ 2SD2438 TO-3PF (FM100) 6.5
–2.5 –3.0 –7 –0.007 50 –12 2 0.8typ 3typ 1.2typ 230typ 2SD2439 TO-3PF (FM100) 6.5
–2.5 –3.0 –10 –0.01 45 –12 2 0.7typ 1.6typ 1.1typ 320typ 2SD2560 TO-3P (MT-100) 6.0
–2.5 –3.0 –10 –0.01 45 –12 2 0.7typ 1.6typ 1.1typ 320typ 2SD2561 MT-200 18.4
–2.5 –3.0 –10 –0.01 45 –12 2 0.7typ 1.6typ 1.1typ 320typ 2SD2562 TO-3PF (FM100) 6.5
Transistors 157
2-1 Transistors

ICBO hFE
VCBO VCEO Ic Pc
VCB VCE Ic
(V) (V) (A)
2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3
2SC3519A Audio, general-purpose 180 180 15 130 100 180 50 180 4 5
2SC3835 Humidifier, DC-DC converter, general-purpose 200 120 7 (Pulse 14) 70 100 200 70 220 4 3
2SC3851 Audio, PPC high voltage power supply, general-purpose 80 60 4 25 100 80 40 320 4 1
2SC3851A Audio, PPC high voltage power supply, general-purpose 100 80 4 25 100 100 40 320 4 1
2SC3852 Solenoid/motor driver/series regulator, general-purpose 80 60 3 25 10 80 500 4 0.5
2SC3852A Solenoid/motor driver/series regulator, general-purpose 100 80 3 25 10 100 500 4 0.5
2SC3927 Switching regulator, general-purpose 900 550 10 (Pulse 15) 120 100 800 10 28 4 5
2SC4024 DC-DC converter, emergency lamp inverter, general-purpose 100 50 10 35 100 100 300 1600 4 1
2SC4131 DC-DC converter, emergency lamp inverter, general-purpose 100 50 15 (Pulse 20) 60 10 100 60 360 1 5
2SC4153 Humidifier, DC-DC converter, general-purpose 200 120 7 (Pulse 14) 30 100 200 70 220 4 3
2SC4301 Switching regulator, lighting inverter, general-purpose 900 800 7 (Pulse 14) 80 100 800 10 30 4 3
2SC4304 Switching regulator, general-purpose 900 800 3 (Pulse 6) 35 100 800 10 30 4 0.7
2SC4381 TV vertical output, audio output driver, general-purpose 150 150 2 25 10 150 60 10 0.7
2SC4382 TV vertical output, audio output driver, general-purpose 200 200 2 25 10 200 60 10 0.7
2SC4495 For audio temperature compensation, general-purpose 80 50 3 25 10 80 500 4 0.5
2SC4518 Switching regulator, lighting inverter, general-purpose 900 550 5 (Pulse 10) 35 100 800 10 25 4 1.8
2SC4518A Switching regulator, lighting inverter, general-purpose 1000 550 5 (Pulse 10) 35 100 800 10 25 4 1.8
2SC4546 Switching regulator, lighting inverter, general-purpose 600 400 7 (Pulse 14) 30 100 600 10 25 4 3
2SC4883 Audio output driver, TV velocity modulation 150 150 2 20 10 150 60 240 10 0.7
2SC4883A Audio output driver, TV velocity modulation 180 180 2 20 10 180 60 240 10 0.7
2SC6011A Audio, general-purpose 230 230 15 160 10 230 50 180 4 3
158 Transistors
2-1 Transistors
VBE (sat)
Cob
(V) (V) Ic IB MHz VCE IE (g)
(µS) (µS) (µS) (pF)
2.0 5 0.5 70 12 –1 0.2typ 1.4typ 0.35typ 60typ 2SA1186 TO-3P (MT-100) 6.0
2.0 5 0.5 60 12 –2 0.2typ 1.5typ 0.35typ 200typ 2SA1215 MT-200 18.4
2.0 5 0.5 50 12 –2 0.2typ 1.3typ 0.45typ 250typ 2SA1386A TO-3P (MT-100) 6.0
0.5 1.2 3 0.3 30 12 –0.5 0.5max 3max 0.5max 110typ TO-3P (MT-100) 6.0
0.5 2 0.2 15 12 –0.2 0.2typ 1typ 0.3typ 60typ 2SA1488 TO-220F (FM20) 2.0
0.5 2 0.2 15 12 –0.2 0.2typ 1typ 0.3typ 60typ 2SA1488A TO-220F (FM20) 2.0
0.5 2 0.05 15 12 –0.2 0.8typ 3typ 1.2typ 50typ TO-220F (FM20) 2.0
2.0 5 0.5 20 12 –0.5 0.5typ 1.8typ 0.6typ 300typ 2SA1492 TO-3P (MT-100) 6.0
3.0 10 1 20 12 –0.5 0.3typ 2.4typ 0.4typ 250typ 2SA1493 MT-200 18.4
2.5 10 1 20 12 –1 0.5typ 1.8typ 0.6typ 300typ 2SA1494 MT-200 18.4
0.5 1.2 5 1 6 12 –1 1max 5max 0.5max 105typ TO-3P (MT-100) 6.0
0.5 1.2 5 0.08 18 12 –1 0.5typ 2typ 0.4typ 210typ TO-3PF (FM100) 6.5
0.5 1.3 6 1.2 10 12 –0.7 1max 3max 0.5max 85typ TO-3P (MT-100) 6.0
0.5 1.3 10 2 10 12 –2.0 1max 3max 0.5max 165typ TO-3P (MT-100) 6.0
0.5 1.2 3 0.3 30 12 –0.5 0.5max 3max 0.5max 110typ TO-220F (FM20) 2.0
0.5 1.2 2 0.4 6 12 –0.5 1max 5max 1max 75typ TO-3PF (FM100) 6.5
0.5 1.2 3 0.6 6 12 –1 1max 5max 1max 105typ TO-3PF (FM100) 6.5
0.5 1.2 7 0.14 15 12 –0.3 0.7max 4max 0.7max 50typ TO-220F (FM20) 2.0
1.0 7 0.07 15 12 –0.2 1typ 3typ 1.5typ 35 2SA1667 TO-220F (FM20) 2.0
1.0 7 0.07 15 12 –0.2 1typ 3typ 1.5typ 35 2SA1668 TO-220F (FM20) 2.0
2.0 5 0.5 20 12 –0.5 0.5max 1.8max 0.6max 300 2SA1673 TO-3PF (FM100) 6.5
0.5 1.2 0.7 0.14 15 12 –0.3 0.7max 4max 0.7max 50 TO-3PF (FM100) 6.5
1.5 2 0.2 20 12 –0.5 0.16typ 2.6typ 0.34typ 110 2SA1693 TO-3P (MT-100) 6.0
0.5 4 0.02 40 12 –0.1 0.45typ 1.6typ 0.85typ 30 TO-220F (FM20) 2.0
0.5 2 0.2 20 12 –0.5 0.16typ 2.6typ 0.34typ 110 2SA1725 TO-220F (FM20) 2.0
0.5 1.2 1.8 0.36 6 12 –0.35 0.7max 4max 0.5max 50 TO-220F (FM20) 2.0
0.5 1.2 1.8 0.36 6 12 –0.35 0.7max 4max 0.5max 50 TO-220F (FM20) 2.0
0.7 1.3 3 0.6 10 12 –0.5 0.5max 2max 0.15max 55 TO-220F (FM20) 2.0
0.5 1.2 7 1.4 6 12 –1.5 1max 5max 0.7max 160 TO-3P (MT-100) 6.0
1.0 0.7 0.07 120 12 –0.7 0.5typ 1.5typ 0.5typ 30 2SA1859 TO-220F (FM20) 2.0
1.0 0.7 0.07 120 12 –0.7 0.5typ 1.5typ 0.5typ 30 2SA1859A TO-220F (FM20) 2.0
2.0 5 0.5 60 12 –2 0.26typ 1.5typ 0.35typ 200 2SA1860 TO-3PF (FM100) 6.5
0.5 1.3 7 1.4 10 12 –1 1max 3max 0.5max 105 TO-3P (MT-100) 6.0
0.5 2 0.2 20 12 –0.5 0.16typ 2.6typ 0.34typ 110 2SA1907 TO-3PF (FM100) 6.5
0.5 1.3 1.5 0.3 20 12 –0.3 1max 2max 0.3max 30 TO-220F (FM20) 2.0
0.5 1.2 1.8 0.36 6 12 –0.35 0.7max 4max 0.5max 50 TO-3P (MT-100) 6.0
0.5 5 0.5 20 12 –0.5 – – – 270 2SA2151 TO-3P (MT-100) 6.0
0.5 5 0.5 20 12 –0.5 – – – 270 2SA2151A TO-3P (MT-100) 6.0
0.5 5 0.5 60 12 –2 – – – 250 2SA2223 TP-3P (MT-100) 6.0
Transistors 159
2-1 Transistors

ICBO hFE
VCBO VCEO Ic Pc
VCB VCE Ic
(V) (V) (A)
2SD1785 Solenoid/relay/motor driver/series regulator, general-purpose 120 120 6 (Pulse 10) 30 10 120 2000 2 3
2SD1796 Solenoid/relay/motor driver, general-purpose 60±10 60±10 4 25 10 50 2000 4 3
2SD2014 Solenoid/relay/motor driver/series regulator, general-purpose 120 80 4 25 10 120 2000 2 3
2SD2015 Solenoid/relay/motor driver, general-purpose 150 120 4 25 10 150 2000 2 2
2SD2016 Igniter, relay, general-purpose 200 200 3 25 10 200 1000 15000 4 1
2SD2017 Solenoid/relay/motor driver, general-purpose 300 250 6 35 100 300 2000 2 2
2SD2045 Solenoid/motor driver, general-purpose 120 120 6 (Pulse 10) 50 10 120 2000 2 3
2SD2141 Igniter, solenoid, motor driver, general-purpose 380±50 380±50 6 (Pulse 10) 35 10 330 1500 2 3
2SD2389 Audio, series regulator, general-purpose 160 150 8 80 100 160 5000 30000 4 6
2SD2641 Series regulator, general-purpose 110 110 6 60 100 110 5000 30000 4 5
STD01N Audio 150 150 10 100 100 150 5000 20000 4 6
STD01P Audio –150 –150 –10 100 –100 –150 5000 20000 –4 –6
STD03N Audio 160 160 15 160 100 160 5000 20000 4 10
STD03P Audio –160 –160 –15 160 –100 –160 5000 20000 –4 –10
160 Transistors
2-1 Transistors
VBE (sat)
Cob
(V) (V) Ic IB MHz VCE IE
(µS) (µS) (µS) (pF) (g)
1.5 2 3mA 100 12 –0.1 0.5typ 5.5typ 1.5typ 70 2SB1258 TO-220F (FM20) 2.0
1.5 3 10mA 60 12 –0.2 1typ 4typ 1.5typ 45 TO-220F (FM20) 2.0
1.5 2.0 3 3mA 75 12 –0.1 1typ 4typ 1.5typ 45 2SB1257 TO-220F (FM20) 2.0
1.5 2.0 2 2mA 40 12 –0.1 0.6typ 5typ 2typ 40 TO-220F (FM20) 2.0
1.5 2.0 1 1.5mA 90 12 –0.1 40 TO-220F (FM20) 2.0
1.5 2.0 2 2mA 20 12 –1 0.6typ 16typ 3typ 65 TO-220F (FM20) 2.0
1.5 2.0 3 3mA 50 12 –1 0.5typ 5.5typ 1.5typ 70 TO-3PF (FM100) 6.5
1.5 2.0 5 5mA 60 12 –0.5 95 2SB1259 TO-220F (FM20) 2.0
1.5 2.5 8 16mA 20 12 –1 0.6typ 7typ 1.5typ 210 2SB1382 TO-3PF (FM100) 6.5
1.8 2.5 12 24mA 20 12 –1 1typ 6typ 1typ 340 2SB1383 TO-3P (MT-100) 6.0
1.5 4 20mA 20 12 –0.5 95 TO-220F (FM20) 2.0
2.5 3.0 6 6mA 80 12 –1 0.6typ 10typ 0.9typ 85 2SB1559 TO-3P (MT-100) 6.0
2.5 3.0 7 7mA 55 12 –2 0.5typ 10typ 1.1typ 95 2SB1570 MT-200 18.4
2.5 3.0 10 10mA 70 12 –2 0.8typ 4typ 1.2typ 120 2SB1648 MT-200 18.4
2.5 3.0 5 5mA 60 12 –2 0.8typ 6.2typ 1.1typ 55 TO-3P (MT-100) 6.0
2.5 3.0 5 5mA 60 12 –0.5 0.8typ 6.2typ 1.1typ 55 TO-220F (FM20) 2.0
2.5 3.0 5 5mA 60 12 –0.5 0.8typ 6.2typ 1.1typ 55 TO-3PF (FM100) 6.5
2.0 2.5 6 6mA STD01P TO3P-5Pin 6.2
–2.0 –2.5 –6 –6mA STD01N TO3P-5Pin 6.2
2.0 2.5 10 10mA STD03P TO-3P-5pin 6.2
–2.0 –2.5 –10 –10mA STD03N TO-3P-5pin 6.2
Transistors 161
2-2 MOS FETs
Selection Guide
By VDSS
VDSS RDS (ON) ID PD

Part Number Package
(V) (Ω) max (A) (W)
6.0m ±70 80 2SK3800 TO220S (Surface-mount)
40 6.0m ±70 100 2SK3801 TO3P(MT100)
9m ±60 60 FKV460S TO220S (Surface-mount)
10m ±75 40 FKV575 TO220F(FM20)
13m ±50 35 FKV550T TO220F(FM20)
50
15m ±50 35 FKV550N TO220F(FM20)
15m ±50 85 EKV550 TO220
6.0m ±70 90 2SK3710A TO220S (Surface-mount)
6.0m ±70 130 2SK3711 TO3P(MT100)
60
14m ±60 60 FKV660S TO220S (Surface-mount)
28m ±30 40 2SK2420 TO220F(FM20)
80m ±20 35 2SK2779 TO220F(FM20)
100
0.175 ±12 30 2SK2778 TO220F(FM20)
53m ±45 40 FKP202 TO220F(FM20)
200 53m ±45 95 SKP202 TO263 (Surface-mount)
0.175 ±18 35 2SK3003 TO220F(FM20)
43m ±50 85 FKP250A TO3PF(FM100)
75m ±25 40 FKP252 TO220F(FM20)
250 95m ±20 40 FKP253 TO220F(FM20)
95m ±20 40 SKP253 TO263 (Surface-mount)
0.25 ±18 35 2SK3004 TO220F(FM20)
280 53m ±40 85 FKP280A TO3PF(FM100)
300 65m ±30 85 FKP300A TO3PF(FM100)
330 63m ±30 85 FKP330C TO3PF(FM100)
1.1 ±7 35 2SK2701A TO220F(FM20)
450
2.8 ±3 30 2SK2803 TO220F(FM20)
500 1.5 ±5 30 2SK3199 TO220F(FM20)
600 3.8 ±2 30 2SK2848 TO220F(FM20)
900 5.0 ±3 30 2SK2943 TO220F(FM20)
162 Transistors
Transistors 163
2-2 MOS FETs

IGSS IDSS VTH
Part VDSS VGSS ID ID (pulse) PD
EAS Conditions Conditions Conditions
Number
(mJ) (nA) VGS (µA) VDS (V) VDS ID
(V) (V) (A) (A) (W)
max (V) min max (V) min max (V) (µA)
2SK2420 60 ±20 ±30 ±120 40 38 ±100 ±20 100 60 2.0 4.0 10 250
2SK2701A 450 ±30 ±7 ±28 35 130 ±100 ±30 100 450 2.0 4.0 10 1m
2SK2778 100 ±20 ±12 ±48 30 70 ±100 ±20 100 100 1.0 2.0 10 250
2SK2779 100 ±20 ±20 ±80 35 200 ±100 ±20 100 100 1.0 2.0 10 250
2SK2803 450 ±30 ±3 ±12 30 30 ±100 ±30 100 450 2.0 4.0 10 1m
2SK2848 600 ±30 ±2 ±8 30 10 ±100 ±30 100 600 2.0 4.0 10 250
2SK2943 900 ±30 ±3 ±12 30 60 ±100 ±30 100 900 2.0 4.0 10 1m
2SK3003 200 ±20 ±18 ±72 35 120 ±100 ±20 100 200 2.0 4.0 10 1m
2SK3004 250 ±20 ±18 ±72 35 120 ±100 ±20 100 250 2.0 4.0 10 1m
2SK3199 500 ±30 ±5 ±20 30 35 ±100 ±30 100 500 2.0 4.0 10 1m
2SK3710A 60 ±20 ±70 ±140 90 468 ±10µ ±15 100 60 2.0 4.0 10 1m
2SK3711 60 ±20 ±70 ±140 130 ±10µ +15 100 60 2.0 4.0 10 1m
2SK3800 40 ±20 ±70 ±140 80 400 ±10 ±15 100 40 2.0 4.0 10 1m
2SK3801 40 ±20 ±70 ±140 100 400 ±10 ±15 100 40 2.0 4.0 10 1m
EKV550 50 ±20 ±50 ±150 85 150 ±10µ ±20 100 50 3.0 4.2 10 250
FKP202 200 ±30 ±45 ±180 40 200 ±100 ±30 100 200 3.0 4.5 10 1m
FKP250A 250 ±30 ±50 ±200 85 400 ±100 ±30 100 250 3.0 4.5 10 1m
FKP252 250 ±30 ±25 ±100 40 200 ±100 ±30 100 250 3.0 4.5 10 1m
FKP253 250 ±30 ±20 ± 80 40 160 ±100 ±30 100 250 3.0 4.5 10 1m
FKP280A 280 ±30 ±40 ±160 85 400 ±100 ±30 100 280 3.0 4.5 10 1m
FKP300A 300 ±30 ±30 ±120 85 400 ±100 ±30 100 300 3.0 4.5 10 1m
FKP330C 330 ±30 ±30 ±120 85 500 ±100 ±30 100 330 3.0 4.5 10 1m
FKV460S 40 +20, –10 ±60 ±180 60 +10, –5µ +20, –10 100 40 1.0 2.5 10 250
FKV550T 50 ±20 ±50 ±150 35 150 ±10µ ±20 100 50 1.0 2.5 10 250
FKV550N 50 ±20 ±50 ±150 35 150 ±10µ ±20 100 50 3.0 4.2 10 250
FKV575 50 ±20 ±75 ±200 40 300 ±100 ±20 100 50 3.0 4.5 10 250
FKV660S 60 +20, –10 ±60 ±180 60 +10, –5µ +20, –10 100 60 1.0 2.5 10 250
SKP202 200 ±30 ±45 ±180 95 200 ±100 ±30 100 200 3.0 4.5 10 1m
SKP253 250 ±30 ±20 ± 80 40 160 ±100 ±30 100 250 3.0 4.5 10 1m
164 Transistors
2-2 MOS FETs
Mass
Re (yfs) Ciss Crss RDS (ON)
Conditions Conditions Conditions Conditions Package
(S) VDS ID (pF) (pF) VGS VDS (Ω) VGS ID (Ω) VGS ID (g)
min typ (V) (A) typ typ (V) (V) typ max (V) (A) typ max (V) (A)
13 20 10 15 2200 0 25 21m 28m 10 15 TO220F(FM20) 2.0
3.5 5 20 3.5 720 62 0 10 0.84 1.1 10 3.5 TO220F(FM20) 2.0
7 11 10 6 740 75 0 10 105m 175m 10 6 130m 220m 4 6 TO220F(FM20) 2.0
12 20 10 10 1630 180 0 10 60m 80m 10 10 75m 95m 4 10 TO220F(FM20) 2.0
1.5 2.1 20 1.5 340 26 0 10 2.1 2.8 10 1.5 TO220F(FM20) 2.0
1.2 1.7 20 1 290 30 0 10 3 3.8 10 1 TO220F(FM20) 2.0
1.8 2.8 20 1.5 600 40 0 10 4 5 10 1.5 TO220F(FM20) 2.0
7 11 10 9 850 250 0 10 130m 175m 10 9 TO220F(FM20) 2.0
7 11 10 9 850 250 0 10 0.2 0.25 10 9 TO220F(FM20) 2.0
3.5 5.2 20 2.5 650 110 0 10 1.2 1.5 10 2.5 TO220F(FM20) 2.0
30 80 10 35 8000 1000 0 10 5m 6m 10 35 TO220S(Surface-mount) 1.4
30 80 10 35 8000 1000 0 10 5m 6m 10 35 TO3P(MT100) 6.0
30 50 10 35 5100 860 0 10 5m 6m 10 35 TO220S(Surface-mount) 1.4
30 50 10 35 5100 860 0 10 5m 6m 10 35 TO3P(MT100) 6.0
17 10 25 2000 500 0 10 12m 15m 10 25 TO220 2.0
18 28 10 22 2000 80 0 25 45m 53m 10 22 TO220F(FM20) 2.0
30 42 10 25 3800 210 0 25 37m 43m 10 25 TO3PF(FM100) 6.5
13 21 10 12 2000 70 0 25 68m 75m 10 12 TO220F(FM20) 2.0
8 17 10 10 1600 50 0 25 86m 95m 10 10 TO220F(FM20) 2.0
25 38 10 20 3800 190 0 25 46m 53m 10 20 TO3PF(FM100) 6.5
20 33 10 15 3800 180 0 25 57m 65m 10 15 TO3PF(FM100) 6.5
23 37 10 15 4600 220 0 25 50m 63m 10 15 TO3PF(FM100) 6.5
20 10 25 2800 600 0 10 7m 9m 10 25 TO220S(Surface-mount) 1.5
20 10 25 2700 500 0 10 10m 13m 10 25 TO220F(FM20) 2.0
17 10 25 2000 500 0 10 12m 15m 10 25 TO220F(FM20) 2.0
30 10 37 3200 750 0 10 7m 10m 10 37 TO220F(FM20) 2.0
20 10 25 2500 150 0 10 11m 14m 10 25 TO220S(Surface-mount) 1.5
18 28 10 22 2000 80 0 25 45m 53m 10 22 TO263(Surface-mount) 1.5
8 17 10 10 1600 50 0 25 86m 95m 10 10 TO263(Surface-mount) 1.5
Transistors 165
2-3 IGBT
Selection Guide
By VCES
VCES IC PC
Part Number Package
(V) (A) (W)
330 20 35 FGT312 TO220F(FM20)
330 30 35 FGT313 TO220F(FM20)
400 20 35 FGT412 TO220F(FM20)
600 20 35 FGT612 TO220F(FM20)
600 30 60 FGM603 TO3PF(FM100)
600 50 150 MGD623N TO3P(MT100)
600 50 150 MGD623S TO3P(MT100)
166 Transistors
Transistors 167
2-3 IGBT
Absolute Maximum Ratings (Ta=25°C)

PC IGES ICES VGE(th) VCE(sat) Cies Coes Cres
Part VCES VGE IC ID(pulse)
(Ta=25°C) Conditions Conditions Conditions Conditions Conditions
Number
(nA) VGE (µA) VCE (V) IC VCE (V) IC VGE (pF) (pF) (pF) VCE VGE
(V) (V) (A) (A) (W)
max (V) max (V) min max (mA) (V) typ max (A) (V) typ typ typ (V) (V)
FGM603 600 ±20 30 90 60 ±100 ±20 100 600 4 7 1 10 1.6 2.0 30 15 4600 110 80 20 0
FGT312 330 ±30 20 120 35 ±100 ±30 100 330 3 6 1 10 1.3 1.7 20 15 1200 130 65 20 0
FGT313 330 ±30 30 200 35 ±100 ±30 100 330 3 6 1 10 1.3 1.7 30 15 2400 110 60 30 0
FGT412 400 ±30 20 120 35 ±100 ±30 100 400 3 6 1 10 1.4 1.8 20 15 1200 120 65 20 0
FGT612 600 ±30 20 120 35 ±100 ±30 100 600 3 6 1 10 1.6 2.0 20 15 1200 80 40 20 0
MGD623N 600 ±30 50 100 150 ±100 ±30 100 600 3 6 1 10 1.7 2.3 50 15 2500 150 80 20 0
MGD623S 600 ±30 50 100 150 ±100 ±30 100 600 3 6 1 10 1.8 2.4 50 15 2500 150 80 20 0
168 Transistors
2-3 IGBT
Electrical Characteristics (Ta=25°C)

td(on) tr td(off) tf Qg Qge Qgc Mass
VF trr
(ns) (ns) (ns) (ns) ID VCE (nC) (nC) (nC) IC VCE VGE (V) IF (µs) IF di/dt (g)
typ typ typ typ (A) (V) typ typ typ (A) (V) (V) typ max (A) typ (A) (A/µs)
130 70 340 200 30 300 L Load 120 30 30 30 300 15 TO3PF(FM100) 6.5
15 30 55 210 20 150 R Load 35 8 10 20 150 15 TO220F(FM20) 2.0
20 90 90 180 60 250 R Load 65 10 20 60 250 15 TO220F(FM20) 2.0
15 35 55 220 20 200 R Load 35 8 10 20 200 15 TO220F(FM20) 2.0
25 60 70 190 20 300 R Load 35 6 9 20 300 15 TO220F(FM20) 2.0
75 70 250 200 50 300 L Load 65 15 20 50 300 15 1.2 1.6 30 0.3 30 100 TO3P(MT100) 6.0 Built-in Di
75 70 250 120 50 300 L Load 65 15 20 50 300 15 1.2 1.6 30 0.3 30 100 TO3P(MT100) 6.0 Built-in Di
Transistors 169
2-4 Transistor and MOS FET Arrays
Part Number Category Circuit Count VCEO · VDSS (V) · VCES (V) IC · ID (A) hFE (min) RDS (ON) max(Ω) Package Mass (g)
SDA05 For 3-phase motor driver 3 –60 –4 2000 PS16 (Surface-Mount) 1.1
SDC03 For sink driver 4 60±10 1.5 2000 PS16 (Surface-Mount) 1.1
SDC04 For sink driver 4 100±15 1.5 2000 PS16 (Surface-Mount) 1.1
SDC06 For sink driver 4 30 to 45 2 400 PS16 (Surface-Mount) 1.1
SDC07 For 3-phase motor driver 3 60 4 2000 PS16 (Surface-Mount) 1.1
SDH02 For sink driver 4 100 1.5 2000 PS16 (Surface-Mount) 1.1
SLA4030 For sink driver 4 100 4 2000 SIP12 with Fin (SLA12Pin) 6.0
SLA4070 For source driver 4 –100 –5 1000 SIP12 with Fin (SLA12Pin) 6.0
SLA4071 For source driver 4 –100 –5 2000 SIP12 with Fin (SLA12Pin) 6.0
SLA4390 H bridge 4 ±100 ±5 2000 SIP12 with Fin (SLA12Pin) 6.0
SLA5022 For 3-phase motor driver 6 ±60 ±6 2000 0.22 SIP12 with Fin (SLA12Pin) 6.0
SLA5037 For sink driver 4 100 10 0.08 SIP12 with Fin (SLA12Pin) 6.0
SLA5059 For 3-phase motor driver 6 ±60 ±4 0.55 SIP12 with Fin (SLA12Pin) 6.0
SLA5065 For 5-phase motor driver 4 60 7 0.1 SIP15 with Fin (SLA15Pin) 6.0
SLA5075 For 3-phase motor driver 6 500 ±5 1.4 SIP15 with Fin (SLA15Pin) 6.0
SLA5086 For source driver 5 –60 –5 0.22 SIP12 with Fin (SLA12Pin) 6.0
SLA5201 For 3-phase motor driver 6 600 7 1.85typ(VCE(sat)) SIP15 with Fin (SLA15Pin) 6.0
SLA5212 For 3-phase motor driver 6 35 ±8 0.07 SIP15 with Fin (SLA15Pin) 6.0
SLA5222 For Simplifed PFC 1+Di×4 600 30 1.3typ(VCE(sat)) SIP12 with Fin (SLA12Pin) 6.0
SLA6012 For 3-phase motor driver 6 ±60 ±4 2000 SIP12 with Fin (SLA12Pin) 6.0
SMA4020 For source driver 4 –60 –4 2000 SIP12 (SMA12Pin) 4.0
SMA4021 For source driver 4 –60 –3 2000 SIP12 (SMA12Pin) 4.0
SMA4030 For sink driver 4 100 3 2000 SIP12 (SMA12Pin) 4.0
SMA5106 For sink driver 4 100 4 0.55 SIP12 (SMA12Pin) 4.0
SMA5112 For 3-phase motor driver 6 250 7 0.5 SIP12 (SMA12Pin) 4.0
SMA5118 For 3-phase motor driver 6 500 ±5 1.4 SIP12 (SMA12Pin) 4.0
SMA5125 For 3-phase motor driver 6 ±60 ±10 0.14 SIP12 (SMA12Pin) 4.0
SMA5127 For 3-phase motor driver 6 ±60 ±4 0.55 SIP12 (SMA12Pin) 4.0
SMA5130 For 3-phase motor driver 6 250 2.5 2000 0.9 SIP15 (SMA15Pin) 4.0
SMA5132 For 3-phase motor driver 6 500 1.5 4 SIP12 (SMA12Pin) 4.0
SMA5133 For 3-phase motor driver 6 500 2.5 2 SIP12 (SMA12Pin) 4.0
170 Transistors
Part Number Category Circuit Count VCEO · VDSS (V) · VCES (V) IC · ID (A) hFE (min) RDS (ON) max(Ω) Package Mass (g)
SMA6010 For 3-phase motor driver 6 ±60 ±4 2000 SIP12 (SMA12Pin) 4.0
SMA6080 For 3-phase motor driver 6 ±60 ±2 2000 SIP12 (SMA12Pin) 4.0
SMA6511 For driving stepping motor with two supplies 5 100±15/–60 1.5/–3 2000 SIP12 (SMA12Pin) 4.0
STA301A For sink driver 3 60±10 4 1000 SIP8 (STA8Pin) 2.0
STA302A For source driver/3-phase motor driver 3 –50 –4 1000 SIP8 (STA8Pin) 2.0
STA303A For sink driver/3-phase motor driver 3 100 4 1000 SIP8 (STA8Pin) 2.0
STA322A For source driver 3 –50 –3 100 SIP8 (STA8Pin) 2.0
STA403A For sink driver 4 100 4 1000 SIP10 (STA10Pin) 2.6
STA431A H bridge 4 ±60 ±3 40 SIP10 (STA10Pin) 2.6
STA457C H bridge 4 ±60 ±4 2000 SIP10 (STA10Pin) 2.6
STA460C For sink driver 2 60±10 6 700 SIP10 (STA10Pin) 2.6
Transistors 171
Specifications List by Application Sink Driver Arrays
●Built-in Avalanche Diodes, between Collector and Base

Part Number Circuit Count VCEO (V)/ VDSS (V) IC (A)/ ID (A) hFE (min) RDS(ON)max (Ω) Equivalent Circuit Package
STA460C 2 60±10 6 700 1 SIP10 (STA10Pin)
STA301A 3 60±10 4 1000 2 SIP8 (STA8Pin)
SDC06 4 30 to 45 2 400 3 PS16 (Surface-Mount)
STA413A 4 35±5 3 500 4 SIP10 (STA10Pin)
STA481A 4 60±10 1 2000 5 SIP10 (STA10Pin)
SDC03 4 60±10 1.5 2000 6 PS16 (Surface-Mount)
STA471A 4 60±10 2 2000 5 SIP10 (STA10Pin)
STA401A 4 60±10 4 1000 5 SIP10 (STA10Pin)
STA406A 4 60±10 6 2000 5 SIP10 (STA10Pin)
STA485A 4 100±15 1 2000 5 SIP10 (STA10Pin)
SDC04 4 100±15 1.5 2000 6 PS16 (Surface-Mount)
STA475A 4 100±15 2 2000 5 SIP10 (STA10Pin)
●Built-in Flywheel Diodes

SDH02 4 100 1.5 2000 8 PS16 (Surface-Mount)
SMA4033 4 100 2 2000 9 SIP12 (SMA12Pin)
SMA4032 4 100 3 2000 9 SIP12 (SMA12Pin)
SMA5106 4 100 4 0.55 7 SIP12 (SMA12Pin)
SLA4031 4 120 4 2000 9 SIP12 with Fin (SLA12Pin)
SMA4036 6 120 2 2000 10 SIP15 (SMA15Pin)
●General-Purpose
STA303A 3 100 4 100 12 SIP8Pin
STA412A 4 60 3 300 13 SIP10Pin
STA473A 4 100 2 2000 17 SIP10Pin
SMA4030 4 100 3 2000 15 SIP12Pin
STA403A 4 100 4 1000 17 SIP10Pin
SLA5037 4 100 10 0.08 14 SIP12 with Fin (SLA12Pin)
STA404A 4 200 3 1000 17 SIP10Pin
172 Transistors
●Equivalent Circuit (for Sink Driver)
1 7 C
2 8 D
3 9 E
4 0 F
5 A G
21
3 5 7 9 11 13 15 17 19
2 4 6 8 10 12 14 16 18
1, 20
6 B
Transistors 173
Specifications List by Application Source Driver Arrays
●Built-in Flywheel Diodes

SMA4021 4 –60 –3 2000 1 SIP12 (SMA12Pin)
SLA4071 4 –100 –5 2000 1 SIP12 with Fin (SLA12Pin)
●General-Purpose
STA322A 3 –50 –3 100 2 SIP8 (STA8Pin)
STA302A 3 –50 –4 1000 3 SIP8 (STA8Pin)
STA402A 4 –50 –4 1000 4 SIP10 (STA10Pin)
STA472A 4 –60 –2 2000 4 SIP10 (STA10Pin)
STA421A 4 –60 –3 40 6 SIP10 (STA10Pin)
SMA4020 4 –60 –4 2000 5 SIP12 (SMA12Pin)
SLA4070 4 –100 –5 1000 5 SIP12 with Fin (SLA12Pin)
STA408A 4 –120 –4 2000 7 SIP10 (STA10Pin)
SLA5086 5 –60 –5 0.22 8 SIP12 with Fin (SLA12Pin)
174 Transistors
●Equivalent Circuit (for Source Driver)
1 6
3
8
Transistors 175
Specifications List by Application Motor Driver Arrays
●H Bridge
STA431A 4 ±60 ±3 40 1 SIP10 (STA10Pin)
STA434A 4 ±60 ±4 1000 2 SIP10 (STA10Pin)
STA457C 4 ±60 ±4 2000 3 SIP10 (STA10Pin)
SLA4390 4 ±100 ±5 2000 2 SIP12 with Fin (SLA12Pin)
STA491A 4 ±20 ±7 45 4 SIP10 (STA10Pin)
176 Transistors
●Equivalent Circuit (for Motor Driver)
Transistors 177
●For 3-Phase Motor Drivers

Part Number Circuit Count VCEO (V)/ VDSS (V)/ VCES (V) IC (A)/ ID (A) hFE (min) RDS(ON)max (Ω) Equivalent Circuit Package
SDC07 3 60 4 2000 6 PS16 (Surface-Mount)
STA303A 3 100 4 1000 7 SIP8 (STA8Pin)
STA302A 3 –50 –4 1000 8 SIP8 (STA8Pin)
SDA05 3 –60 –4 2000 9 PS16 (Surface-Mount)
SLA5212 6 35 ±8 70m 18 SIP15 with Fin (SLA15Pin)
SLA5096 6 55 ±8 80m 18 SIP15 with Fin (SLA15Pin)
SLA5059 6 60 ±4 0.55 10 SIP15 with Fin (SLA15Pin)
SMA6080 6 ±60 ±2 2000 13 SIP12 (SMA12Pin)
SMA6010 6 ±60 ±4 2000 13 SIP12 (SMA12Pin)
SMA5127 6 ±60 ±4 0.55 14 SIP12 (SMA12Pin)
SLA5022 6 ±60 ±6 2000 0.22 15 SIP12 with Fin (SLA12Pin)
SMA5125 6 ±60 ±10 0.14 11 SIP12 (SMA12Pin)
SMA5130 6 ±250 ±2.5 2000 0.9 20 SIP15 (SMA15Pin)
SMA5131 6 250 2 1.8 17 SIP12 (SMA12Pin)
SMA5112 6 250 7 0.5 17 SIP12 (SMA12Pin)
SMA5117 6 250 7 0.25 17 SIP12 (SMA12Pin)
SMA5132 6 500 1.5 4 17 SIP12 (SMA12Pin)
SMA5133 6 500 2.5 2 17 SIP12 (SMA12Pin)
SMA5118 6 500 ±5 1.4 17 SIP12 (SMA12Pin)
SLA5201 6 600 7 19 SIP15 with Fin (SLA15Pin)
●For Driving Stepping Motor with Two Supplies

SMA6511 5 100±15/–60 1.5/–3 2000 27 SIP12 (SMA12Pin)
●For 5-Phase Motor Drive

178 Transistors
●Equivalent Circuit (for Motor Driver)
6 B H
7 C I
D J
8
E K
9
: F
L
A G
Transistors 179
Specifications List by Application
Part Number
Applications Typical Connection Diagram Transistors
MOS FETs
Darlington Single
●Solenoid STA301A STA460C
STA401A STA413A
●Relay STA406A SDC06
STA471A
STA475A
STA481A
STA485A
SDC04
SDC03
SLA4031 SMA5106
SLA4041
SLA4060
SMA4032
SMA4033
SMA4036
SDH02
SLA4071
SMA4021
STA302A STA322A
STA402A STA421A
STA408A
STA472A
SLA4070
SMA4020
180 Transistors
Part Number
MOS FETs
Darlington Single
●DC Motor Normal/Reverse STA434A STA431A
Rotation Control STA457C STA474A
STA4390
●3-Phase AC100V Direct Driver STA302A+STA303A

DC Brushless SMA6010
Motor SLA6020
SDA05+SDC07
SMA6080
AC200V Direct Driver SLA5075

SMA5112
SMA5117
SMA5118
SMA5131
SMA5132
SMA5133
PWM Control SLA6012

SLA6022
SLA6023
SLA6024
SLA6026
SLA5022
SMA5130
SLA5059
SLA5060
SLA5061
SLA5064
SMA5125
SMA5127
Transistors 181
Part Number
MOS FETs
Darlington Single
●Stepping Constant Voltage STA401A STA460C
Motor Driver STA406A STA413A
STA435A SDC06
STA471A
STA475A
STA481A
STA485A
SLA4010
SDC04
SDC03
Two Supplies Driver SMA6511
Bipolar Driver STA473A STA421A

STA472A STA412A
STA408A SDC01
STA404A
STA403A
STA402A
SMA4030
SMA4020
SLA4070
SLA4060
SLA4030
Part Number
Applications Typical Connection Diagram
N-CH P-CH
●5-Phase SLA5065+SLA5068 SLA5086
Motor SLA5073+SLA5074
SLA5085
182 Transistors
Package Type (Dimensions)
■Package Type (Dimensions)
• TO-220F (FM20) • TO-220 (MT-25) • TO-3P (MT-100)

15.6 ±0.3
4.2±0.2 4.8 ±0.2
2.8±0.2
10.0±0.2 9.9±0.3 4.5±0.2
5.0 ±0.7
(1.3)
9.6 ±0.2
(1.7)
2.0 ±0.1
2.0
2.8±0.2 0.5 1.3±0.2
C (8.7)
4.0 ±0.3
8.4 ±0.2
φ 3.6±0.2
18.95MAX
19.9±0.3
16.0 ±0.3
4.0
15.9±0.3
φ 3.2 ±0.1
9.2±0.3
φ 3.3±0.2 a
a
0.8 ±0.2
b
b 2.4±0.2
(3)
±0.15
0.5 −0.1 2 +0.2
−0.1
20.0min
±0.2
3.9
13.1±0.5
3.5
3 +0.2
13.0min
−0.1
1.35±0.15
1.35±0.15 1.05+0.2
−0.1 0.65+0.2
−0.1
2.54±0.2
0.85+0.2
−0.1 5.45 ±0.1 5.45 ±0.1 1.7 +0.2
−0.1
0.45+0.2
−0.1 2.4±0.2 10±0.2
2.54 2.54 B C E
a: Part Number
2.2±0.2 b: Lot No.
(1) (2) (3)
a: Part Number
b: Lot No.
• TO-3PF (FM100) • MT-200 • TO-220S

36.4 ±0.3 6.0 ±0.2
5.5±0.2 24.4 ±0.2 2.1

15.6±0.2 2-φ 3.2 ±0.1 10.2±0.3 4.44±0.2
3.45±0.2
(1.4)
9 1.3±0.2
±0.2
0.8
9.5 ±0.2
5.5
+0.3
21.4±0.3
10.0 –0.5
23.0 ±0.3
8.6±0.3
φ 3.3±0.2 a
b
a +0.2
(1.5)
(1.5)
b 0.1 –0.1
b c
1.6
3.0
2.59±0.2
1.27±0.2
3.3
2
4.1max
20.0min
±0.15 0.8 +0.2

1.75
3 0.86 –0.1 0.4±0.1
+0.3
3.0 –0.5
2.15±0.15 1.2±0.2
1.05+0.2 1.05 +0.2
−0.1 0.6 +0.2
−0.1
−0.1
a: Part Number
2.54±0.5 2.54±0.5 b: Polarity
5.45±0.1 5.45±0.1 0.65+0.2
−0.1 3.35±0.2
5.45 ±0.1
5.45 ±0.1 3.0 +0.3
−0.1 q w e c: Lot No.
1.5 4.4 1.5 B C E
a: Part Number a: Part Number

b: Lot No. b: Lot No.
• TO-263 • TO3P-5Pin
NPN PNP
1.20±0.20
(0.40)
4.50±0.20
9.90±0.20
1.30 +0.10
–0.05
Gate burr (Including pulling Gate burr (Including pulling
out the burr) out the burr)
9.20±0.20
15.30±0.30
0.10±0.15
1.40±0.20
(Measured at the root) (Measured at the root)

(0.75) 2.00±0.10
2.40±0.20
4.90±0.20
(Including the solder drip)
(Including the solder drip)
(R0.30)
2.54±0.30
1.27±0.10
0.80±0.10
0.50 +0.10
–0.05
2.54±0.20 2.54±0.20

(1) (2) (3)
10.00±0.20
(Unit:mm)
Transistors 183
• SIP 8 (STA8Pin) • SIP 10 (STA10Pin)

20.4 max
25.25±0.2
9.0±0.2
11.3±0.2
2.5 max
2.3±0.2
11.3±0.2
9.0±0.2
4.7±0.5
4.7±0.5
(2.54)
1.0±0.25 0.5±0.15 a: Part Number
1.0±0.25 0.5±0.15 (2.54) b: Lot No.
9 × 2.54 = 22.86±0.25
7 × P2.54 = 17.78
0.5±0.15
1.2±0.2
4.0±0.2
C1.5±0.5
0.5±0.15
1.2±0.2
C1.5±0.5
4.0±0.2
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
1 2 3 4 5 6 7 8
Pin No.
• PS 16 (Surface-Mount) • SIP 12 (SMA12Pin)

0.89±0.15 2.54±0.25 4.0±0.2
+0.15 31.0±0.2
0.75–0.05 2.5±0.2
9
16
6.8max
a
b
10.2±0.2
b a
2.4
1 20.0max 8
8.0±0.5
(10.4)
6.3±0.2 19.56±0.2
0.3–0.05
+0.15
1.46±0.15
4.0max
0.25
+0.2
2.54 0.85–0.1 +0.2
0 to 0.1 0.55–0.1 1.2±0.1
3.6±0.2
1.4±0.2
27.94
±0.3 ±0.2
1.0 3.0
9.8±0.3 b: Lot No. b: Lot No.
• SIP 15 (SMA15Pin) • SIP 12 with Fin (SLA12Pin)

±0.2
±0.2 4.0
31.0
2.5±0.2 31.5max
31.0±0.2 Ellipse
φ 3.2±0.15 3.2±0.15 × 3.8 4.8±0.2
b 24.4±0.2 1.7±0.1
10.2±0.2
a
(3.0) 6.7±0.5
16.0±0.2
9.7–0.5
+1.0
13.0±0.2
R-End a
b
+0.2
–0.1
0.55
9.5min
2.7
+0.2 +0.2
* 4.0±0.7 Pin1 12
0.65–0.1 * * 1.15–0.1
14 × P2.03±0.7= 28.42±1.0 0.85–0.1
+0.2
+0.2
1.2±0.15 1.45±0.15 0.55–0.1 2.2±0.7
a: Part Number
11 × P2.54±0.7 = 27.94±1.0
b: Lot No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
• SIP 15 with Fin (SLA15Pin) • SIP 21 with Fin (SLA21Pin)

31.3±0.2 31.0±0.2
24.4±0.2 φ 3.2±0.15 × 3.8 4.8±0.2
φ 3.2±0.15 31.0±0.2 φ 3.2±0.15 × 3.8
4.8±0.2 16.4±0.2 1.7±0.1
24.4±0.2 Gate burr
1.7±0.1
16.4±0.2
φ 3.2±0.15
16±0.2
12.9±0.2
2.45±0.2
16.0±0.2
17.9±0.6
9.9±0.2
a
13.0±0.2
±0.2
±0.2 b
(5)
2.45
9.9
4–(R1)
(3.0) 6.7±0.5
9.7–0.5
+1.0
+0.2
R-End 0.65 –0.1
+0.2
20 × P1.43±0.5=28.6±1.0 0.55–0.1
3±0.5
+0.2 ±0.7
+0.2 +0.2
0.55 –0.1 4
0.65 –0.1
1.15 –0.1
31.3±0.2
* *
14 × P2.03±0.7=28.42±1.0 * 4.0±0.7
a: Part Number
b: Lot No.
1 3 5 7 9 11 13 15 17 19 21
2 4 6 8 10 12 14 16 18 20
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
(Unit:mm)
184 Transistors
Thyristors
3
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3-1 Thyristors ............................................................................... 188
3-2 Triacs ...................................................................................... 190
○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○
3 Thyristors
Product Name Package Standard Packing Quantities (Bulk)
SLA0201 SLA12Pin 1080(Stick)
STA203A STA8Pin 1000(Box)/4050(Stick)
TFC563D TO220S(Straight) 600(Stick)
TF361H-A TO220F 4000(Stick)
TF541S-A FM20 1000(Box)/3750(Stick)
TF561S-A FM20 1000(Box)/3750(Stick)
TFA37S FM20 1000(Box)/3750(Stick)
TMA104S-L FM20 1000(Box)/3750(Stick)
TMA106G-L TO220 4000(Stick)
TMA106H-L TO220F 4000(Stick)
TMA164B-L FM100 500(Box)/1080(Stick)
TMA164P-L MT100 500(Box)/1080(Stick)
TMA166P-L MT100 500(Box)/1080(Stick)
TMB166S-L FM20 1000(Box)/3750(Stick)
TMB206S-L FM20 1000(Box)/3750(Stick)
186 Thyristors
3 Thyristors
Application Note
Since reliability can be affected adversely by improper storage environ-
ment or handling methods during Characteristic tests, please observe the ■ Heatsink
following cautions.
A larger contact area between the device and the heatsink is required for
more effective heat radiation. To ensure a larger contact area, minimize
■ Cautions for Storage mounting holes. And select a heatsink with a surface smooth enough and
free from burrs and slivers.
●Ensure that storage conditions comply with the normal temperature (5 to
35°C) and the normal relative humidity (around 40 to 75%), and avoid
storage locations that experience high temperature and humidity, or ■ Soldering Temperature
extreme changes in temperature or humidity.
In general, the device mounted on a printed circuit board is subjected to
●Avoid locations where dust or harmful gases are present, and avoid
high temperatures from flow solder in a solder bath, or, from a soldering
direct sunlight.
iron at hand soldering.
●Reinspect the devices for rust in leads and solderability after stored for a
The testing method and test conditions (JIS-C-7021 standards) for a
long time.
device’s heat resistance to soldering are:
At a distance of 1.5mm from the device's main body, apply 260°C for 10
■ Cautions for Characteristic Tests and Handling seconds, and 350°C for 3 seconds.
Please observe these limits and finish soldering in as short a time as
On characteristics test at incoming inspection, etc, take good care to avoid possible.
the surge voltages from the test equipment, the short circuit at terminals, Since reliability can be affected adversely by improper storage environ-
or the wrong connection. ment or handling methods during Characteristic tests, please observe the
following cautions.
■ Silicone Grease
When using a heatsink, please coat thinly and evenly the back surface of
the device and both surfaces of the insulating plate with silicone grease to
lower the thermal resistance between the device and the heatsink.
products may penetrate the device and result in an extremely short device
life.
Recommended Silicone Grease
• G-746 (Shin-Etsu Chemical)
• YG6260 (Momentive Performance Materials Inc.)
• SC102 (Dow Corning Toray Silicone)
■ Mounting Torque
When mounting torque is insufficient, thermal resistance increases, and so
heat radiation effect is decreased. When the torque is excessive, the
screw may be broken, the heatsink may be deformed, and the device
frame may be distorted, resulting in the device damage. Recommended
mounting torque per package is as follows:
● Mounting Torque Table

Package Screw Torque
MT-25 (TO-220)
0.490 to 0.686 N•m (5 to 7kgf•cm)
FM20 (TO-220F)
MT-100 (TO-3P)
0.686 to 0.882 N•m (7 to 9kgf•cm)
FM100 (TO-3PF)
SLA (SIP with Fin) 0.588 to 0.784 N•m (6 to 8kgf•cm)
* When the surface of a heatsink where Full Mold package is to be

mounted is not flat due to the burred metal bracket for screwing around
the mounting hole of the heatsink, the resin of the package might be
cracked even if the torque is lower than the recommended value.
* When a screw is fastened with an air driver for the Full Mold package, a
large impact is generated at the time of stop, and the resin may crack
even if the torque is lower than the recommended value. An electric
driver, therefore, should be used instead of an air driver.
Thyristors 187
3-1 Thyristors
Thyristors

V RSM V RRM IT (AV) I T (RMS) ITSM P GM P G (AV) V RGM IFGM Tj T stg I RRM
Part Number V DSM V DRM Conditions (50Hz) 50Hz Single I DRM Conditions
Tc Half Sine Tj
(V) (V) (A) (°C) (A) Wave, Default (W) (W) (V) (A) (°C) (°C) (mA) (°C)
T j =125°C (A) max
TF541S-A 500 400 5.0 88 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125
SLA0201 650 600 5× 4 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125
TF361H-A 700 600 3.0 83 4.7 *1 60 5.0 0.5 5.0 2.0 −40∼＋110 −40∼＋125 2.0 125
TF561S-A 700 600 5.0 88 7.8 80 5.0 0.5 5.0 2.0 –40 to +125 2.0 125
TFA37S – 700 3.0 127 4.7 60 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA57S – 700 5.0 115 7.8 80 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA87S – 700 8.0 98 12.6 120 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA107S – 700 10 86 15.7 160 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA38S – 800 3.0 50 4.7 60 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA58S – 800 5.0 50 7.8 80 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA88S – 800 8.0 50 12.6 120 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
TFA108S – 800 10 50 15.7 160 5.0 0.5 5.0 2.0 –40 to +150 2.0 150
*1:Default Tj=110°C
3-Pin Reverse Conducting Thyristors for HID Lamp Ignition

VDRM I TRM*1 di/dt*1 P GM PG (AV) V RGM I FGM*2 I FRM Tj Tstg I DRM VTM
Part Number Conditions Conditions
Tj Tc I TM
(V) (A) (A/µs) (W) (W) (V) (A) (A) (°C) (°C) (mA) (°C) (V) (°C) (A)
max max
TFC563D 600 500 1500 5.0 0.5 5.0 2.0 450 –40 to +125 1.0 125 1.4 25 10
*1: TC≤100°C, VD≤430V, Wp≤1.0µs, IG≥70mA, dig/dt≥0.5A/µs, 100kcycles*1

*2: TC≤100°C, VD≤430V, Wp≤1.0µs, 100kcycles*1
188 Thyristors
3-1 Thyristors
V TM V GT IGT VGD dv/d t IH Rth Mass
Tc I TM Tc Tj VD Tj VD
(V) (°C) (A) (V) (mA) (°C) (V) (°C) (V) (V/µ s) (°C) (V) (mA) (°C/W) g
max typ max typ max min typ typ max
1.4 25 10 1.5 0.03 0.2 25 0.1 125 1/2V DRM 20 125 1/2V DRM 4.0 4.0 FM20 2.0
SIP12 with Fin
1.4 25 10 0.7 1.5 5.0 10 25 0.1 125 1/2V DRM 50 125 1/2V DRM 4.0 6.0
(SLA12Pin)
1.4 25 5.0 1.5 − 0.1 25 0.1 125 1/2VDRM 50 110 1/2VDRM − 5 TO220F 2.0
1.4 25 10 1.5 0.03 0.2 25 0.1 125 1/2V DRM 20 125 1/2V DRM 4.0 4.0 FM20 2.0
1.5 25 10 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 4.1 FM20 2.0
1.5 25 15 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 3.8 FM20 2.0
1.4 25 20 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.5 FM20 2.0
1.35 25 20 − 1.0 7.0 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.4 FM20 2.0
1.5 25 10 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 4.1 FM20 2.0
1.5 25 15 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 15 3.8 FM20 2.0
1.5 25 20 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.5 FM20 2.0
1.35 25 20 − 1.0 − 15 25 0.2 125 1/2VDRM 300 125 1/2VDRM 20 3.4 FM20 2.0
V GT I GT VGD IH Rth VF Mass
Conditions Conditions Conditions Package
Tc Tj VD IF
(V) (mA) (°C) (V) (°C) (V) (mA) (°C/W) (V) (A) (g)
typ max typ max min typ max max
1.5 30 25 0.1 125 480 12 4.0 1.4 10 TO-220S 1.5
Thyristors 189
3-2 Triacs
Triacs

V DRM IT (RMS) ITSM PGM PG (AV) I GM Tj T stg I DRM1 IDRM2 V TM
Conditions Conditions Conditions Conditions Conditions
Part Number
Tc I TM
(V) (A) (°C) (A) (W) (W) (A) (°C) (°C) (mA) (mA) (V) (A)
max max max
TMA34S-L 400 3 109 30 125 3 0.3 0.5 –40 to +125 0.1 2 1.5 4.5
TMA54S-L 400 5 102 50 125 5 0.5 2 –40 to +125 0.1 2 1.5 7
TMA84S-L 400 8 92 80 125 5 0.5 2 –40 to +125 0.1 2 1.5 12
TMA104S-L 400 10 85 100 125 5 0.5 2 –40 to +125 0.1 2 1.5 14
TMA124S-L 400 12 77 120 125 5 0.5 2 –40 to +125 0.1 2 1.5 17
TMA164S-L 400 16 66 160 125 5 0.5 2 –40 to +125 0.1 2 1.45 20
TMA164P-L 400 16 108 160 125 5 0.5 2 –40 to +125 0.1 2 1.4 20
TMA164B-L 400 16 98 160 125 5 0.5 2 –40 to +125 0.1 2 1.4 20
TMA204S-L 400 20 53 190 125 5 0.5 2 –40 to +125 0.1 2 1.4 20
TMA254B-L 400 25 83 250 125 5 0.5 2 –40 to +125 0.1 2 1.3 20
STA203A 400 1.2×3 97 10 125 1.2 0.1 0.5 –40 to +125 0.1 1 1.6 1.6
TMA36S-L 600 3 109 30 125 3 0.3 0.5 –40 to +125 0.1 2 1.5 4.5
TMA36G-L 600 3 115 30 25 3 0.5 0.5 –40 to +125 0.1 2 1.5 4.5
TMA36H-L 600 3 109 30 25 3 0.5 0.5 –40 to +125 0.1 2 1.5 4.5
TMA56S-L 600 5 102 50 125 5 0.5 2 –40 to +125 0.1 2 1.5 7
TMA56G-L 600 5 111 50 25 5 0.5 2 –40 to +125 0.1 2 1.5 7
TMA56H-L 600 5 101 50 25 5 0.5 2 –40 to +125 0.1 2 1.5 7
TMA86S-L 600 8 92 80 125 5 0.5 2 –40 to +125 0.1 25°C 2 125°C 1.5 12
TMA86G-L 600 8 107 80 25 5 0.5 2 –40 to +125 0.1 2 1.5 12
TMA86H-L 600 8 91 80 25 5 0.5 2 –40 to +125 0.1 2 1.5 12
TMA106S-L 600 10 85 100 125 5 0.5 2 –40 to +125 0.1 2 1.5 14
TMA106G-L 600 10 105 100 25 5 0.5 2 –40 to +125 0.1 2 1.5 14
TMA106H-L 600 10 83 100 25 5 0.5 2 –40 to +125 0.1 2 1.5 14
TMA126S-L 600 12 77 120 125 5 0.5 2 –40 to +125 0.1 2 1.5 17
TMA126G-L 600 12 103 120 25 5 0.5 2 –40 to +125 0.1 2 1.5 17
TMA126H-L 600 12 78 120 25 5 0.5 2 –40 to +125 0.1 2 1.5 17
TMA166S-L 600 16 66 160 125 5 0.5 2 –40 to +125 0.1 2 1.45 20
TMA166G-L 600 16 100 160 25 5 0.5 2 –40 to +125 0.1 2 1.45 20
TMA166H-L 600 16 65 160 25 5 0.5 2 –40 to +125 0.1 2 1.45 20
TMA166P-L 600 16 108 160 125 5 0.5 2 –40 to +125 0.1 2 1.4 20
TMA166B-L 600 16 98 160 125 5 0.5 2 –40 to +125 0.1 2 1.4 20
TMB166S-L 600 16 94 160 125 5 0.5 2 –40 to +150 0.1 2 1.45 20
TMA206S-L 600 20 53 190 125 5 0.5 2 –40 to +125 0.1 2 1.4 20
TMB206S-L 600 20 85 200 125 5 0.5 2 –40 to +150 0.1 2 1.4 20
TMA256B-L 600 25 83 250 125 5 0.5 2 –40 to +125 0.1 2 1.3 20
190 Thyristors
3-2 Triacs
Electrical Characteristics (T j = 25°C, unless otherwise specified)

V GT IGT V GD (dv/dt) c R th (j-c)
Mode I Mode II Mode III Conditions Mode I Mode II Mode III Conditions Conditions Conditions Mass
(T2+, G+) (T2+, G–) (T2–, G–) V D RL (T2+, G+) (T2+, G–) (T2–, G–) VD R L Tj VO (dv/dt) c T j Package
(V) (V) (V) (V) (Ω) (mA) (mA) (mA) (V) (Ω) (°C) (V) (V/us) (–A/ms) (°C) (°C/W)
(g)
max max max max max max min max
1.5 1.5 1.5 12 20 20 20 20 12 20 0.2 125 1/2VDRM 5 1.5 125 4.5 FM20 2.0
1.5 1.5 1.5 12 20 20 20 20 12 20 0.2 125 1/2VDRM 5 2.5 125 4 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 4 125 3.7 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 5 125 3.6 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.1 125 1/2VDRM 10 6 125 3.5 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 8 125 3.3 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 8 125 1.2 MT100 6.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 8 125 1.8 FM100 6.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 10 125 3.2 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 12 125 1.6 FM100 6.5
3.5 1.2 1.2 6 10 3 3 3 6 10 0.2 125 1/2VDRM 1 125 20 STA8pin 2.0
1.5 1.5 1.5 12 20 15/20 15/20 15/20 12 20 0.2 125 1/2VDRM 5 1.5 125 4.5 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 5 1.5 125 3 TO220 2.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 5 1.5 125 4.6 TO220F 2.0
1.5 1.5 1.5 12 20 15/20 15/20 15/20 12 20 0.2 125 1/2VDRM 5 2.5 125 4 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 5 2.5 125 2.5 TO220 2.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 5 2.5 125 4.2 TO220F 2.0
1.5 1.5 1.5 12 20 20/30 20/30 20/30 12 20 0.2 125 1/2VDRM 10 4 125 3.7 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 4 125 2 TO220 2.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 4 125 3.8 TO220F 2.0
1.5 1.5 1.5 12 20 20/30 20/30 20/30 12 20 0.2 125 1/2VDRM 10 5 125 3.6 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 5 125 1.8 TO220 2.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 5 125 3.7 TO220F 2.0
1.5 1.5 1.5 12 20 20/30 20/30 20/30 12 20 0.2 125 1/2VDRM 10 6 125 3.5 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 6 125 1.6 TO220 2.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 6 125 3.5 TO220F 2.0
1.5 1.5 1.5 12 20 20/30 20/30 20/30 12 20 0.2 125 1/2VDRM 10 8 125 3.3 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 8 125 1.4 TO220 2.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 8 125 3.3 TO220F 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 8 125 1.2 MT100 6.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 8 125 1.8 FM100 6.5
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 10 125 3.0 FM20 2.0
1.5 1.5 1.5 12 20 20/30 20/30 20/30 12 20 0.2 125 1/2VDRM 10 10 125 3.2 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 10 125 2.7 FM20 2.0
1.5 1.5 1.5 12 20 30 30 30 12 20 0.2 125 1/2VDRM 10 12 125 1.6 FM100 6.5
Thyristors 191
• TO-220 2.8±0.2 • TO-220F • FM20
9.9±0.3 4.5±0.2 4.2±0.2

(1.3)
10.0±0.2
(1.7)
(8.7) 1.3±0.2 10.16±0.3 2.54±0.2
4.0 ±0.2
2.8±0.2 0.5
C
6.68±0.2
φ 3.2±0.2
8.4 ±0.2
15.87±0.3
φ 3.6±0.2
18.95MAX
15.8±0.2
15.9±0.3
9.2±0.3
16.9 ±0.3
φ 3.3±0.2
0.8 ±0.2
a
2.4±0.2 2.76 ±0.2
b
(3)
±0.15
0.5 −0.1 0.5 ±0.1
0.8±0.1
3.9
±0.2
13.1±0.5
9.75±0.5
13.0min
1.35±0.15
1.35±0.15
2.54±0.2 0.85+0.2
2.54±0.2 −0.1
0.45+0.2
−0.1 2.4±0.2
10±0.2 2.54 2.54
4.7±0.2 ±0.2
2.2
(1) (2) (3)
(1) (2) (3) a: Part Number
b: Lot No.
(1)(2)(3)
Pin No.
(1) Cathode (T1)
(2) Anode (T2)
(3) Gate (G)
( ): Triacs
• MT100 • FM100 • TO-220S Straight

15.6 ±0.3
5.5±0.2 4.44±0.2
5.5±0.2
13.6 ±0.2 4.8 ±0.2 3.2±0.2
(1.4)
3.45±0.2 10.2±0.3 1.3±0.2
5.0 ±0.7
9.6 ±0.2 2.0 ±0.1

2.0
1.8
9.5±0.2
10.0–0.5
+0.3
11.3±0.5
23±0.3
8.6±0.3
19.9±0.3
4.0
φ 3.2 ±0.1
a
a 3.35±0.2
1.6
3.3
b b (Measured
at the root) 1.2±0.2 2.59±0.2
2 +0.2
−0.1 1.27±0.2
11.0±0.5
20.0min
(16.2)
3.5
+0.2 +0.2
3 +0.2
−0.1
1.75 –0.1 0.86 –0.1
+0.2
1.05+0.2
−0.1 0.65+0.2
−0.1
2.15 –0.1 0.76±0.1
+0.2 +0.2
1.7 +0.2 1.05 –0.1
5.45 ±0.1 5.45 ±0.1 −0.1
0.65 –0.1
5.45±0.1 5.45±0.1 2.54±0.5 2.54±0.5 0.4±0.1
(Measured (Measured
a: Part Number at the root) at the root)
b: Lot No. 15.6±0.2 Pin No.
(1) (2) (3) a: Part Number
1.5 4.4 1.5 (1) (2) (3) (1) Cathode (K)
b: Lot No.
(2) Anode (A)
(3) Gate (G)
(1) (2) (3)
(1) Terminal 1 (T1)

(2) Terminal 2 (T2)
(3) Gate (G)
• STA8Pin • SLA12Pin
31.0±0.2 Ellipse 3.2±0.15×3.8
20.2 ±0.2 40±0.2±0.2 φ 3.2±0.15 24.4±0.2 4.8±0.2
16.4±0.2 1.7±0.1
b
9.0 ±0.2
11.3 ±0.2
9.5min (10.4) 16.0±0.2

13.0±0.2
2.3 ±0.2
a
0.8max
8.5max
9.9±0.2
a
b
4.7 ±0.2
Thy1 Thy2 Thy3 Thy4

2.7
Pin 1 12
+0.2
0.5±0.15 0.85 −0.1 +0.2
1.0±0.25 2.54 1.2±0.15 1.45±0.15 0.55 −0.1 2.2 ±0.7
a: Part Number 1 2 3 4 1 5 6 7 8 9 10 11
17.78 ±0.25
b: Lot No. 11×P2.54±0.7=27.94±0.1
C1.5±0.5 31.5max
a: Part Number
1 2 3 4 5 6 7 8 b: Lot No.
T1 G T2 G T2 G T2 T1
0.5 ±0.15
1 2 3 4 5 6 7 8 9 10 11 12
1.2 ±0.2
G K A G K A G K A G K A
3 5 7
TR1 TR2 TR3
2 4 6
1 8
(Unit: mm)
192 Thyristors
Diodes
4
○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○

Taping Specifications ...................................................................... 196
Marking Guide ................................................................................... 200
4-1 Rectifier Diodes .................................................................... 201
Surface-Mount ........................................................................ 201
Thru-Hole ................................................................................ 201
Bridge ...................................................................................... 202
4-2 Fast Recovery Diodes ......................................................... 203
Thru-Hole ................................................................................ 203
4-3 Ultrafast Recovery Diodes .................................................. 205
Surface-Mount ........................................................................ 205
Thru-Hole ................................................................................ 205
4-4 Schottky Barrier Diodes ...................................................... 208
Standard .................................................................................. 208
• Surface-Mount ................................................................. 208
• Thru-Hole ......................................................................... 208
Low VF “A Series” .................................................................. 209
• Surface-Mount ................................................................. 209
• Thru-Hole ......................................................................... 209
Low IR “E Series” ................................................................... 210
• Surface-Mount ................................................................. 210
• Thru-Hole ......................................................................... 210
Low VF/Low IR Balance “J Series” ....................................... 210
• Surface-Mount ................................................................. 210
• Thru-Hole ......................................................................... 210
4-5 High Voltage Rectifier Diodes ............................................ 211
4-6 Power Zener Diodes ............................................................. 212
4-7 Silicon Varistors ................................................................... 213
○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○
4 Diodes
Standard Packing Quantities
Series Name/Product Name Package
Bulk Taping
AG01x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
AK0x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
AL01x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
AM01x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
AP01x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
AS01x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
AU01x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
AU02x Axial(φ2.4 body/φ0.6 lead) – V:5000(Reel) V1:3000(Box) V0:3000(Box) WS:2500(Box) WK:2500(Box)
SHV-03 Axial(φ2.5 body/φ0.5 lead) – V1:5000(Reel) V.:8000(Reel)
SHV-06EN Axial(φ2.5 body/φ0.5 lead) – V1:5000(Reel) VD:8000(Reel)
SHV-08EN Axial(φ2.5 body/φ0.5 lead) – V1:5000(Reel) VD:8000(Reel)
EG01x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EK0x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EL02x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EM01x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EN01x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EP01x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
ES01x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EU01x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EU02x Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
SVxx Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
VR-xx Axial(φ2.7 body/φ0.6 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box) W:4000(Box)
EG1x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
EH1x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
EK1x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
EL1x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
EM1x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
EM2x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
ES1x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
EU1x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
EU2x Axial(φ2.7 body/φ0.78 lead) – V:5000(Reel) V1:2000(Box) V0:2000(Box)
RA1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RC2 Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RF1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RG10x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RH1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RK1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RL10x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RM10x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RN1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RP1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RS1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RU1x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RX10x Axial(φ4.0 body/φ0.78 lead) – V:3000(Reel) V1:1000(Box)
RD2x Axial(φ4.0 body/φ0.98 lead) – V:3000(Reel) V1:1000(Box)
RH2x Axial(φ4.0 body/φ0.98 lead) – V:3000(Reel) V1:1000(Box)
RK3x Axial(φ4.0 body/φ0.98 lead) – V:3000(Reel) V1:1000(Box)
RL2x Axial(φ4.0 body/φ0.98 lead) – V:3000(Reel) V1:1000(Box)
RN2x Axial(φ4.0 body/φ0.98 lead) – V:3000(Reel) V1:1000(Box)
RO2x Axial(φ4.0 body/φ0.98 lead) – V:3000(Reel) V1:1000(Box)
RH3x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RL3x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RM3x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RN3x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RP3F Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RS3x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RU30x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RU31x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RX3x Axial(φ5.2 body/φ1.2 lead) 500 V3:1500(Reel) V4:1000(Box)
RG4x Axial(φ6.5 body/φ1.4 lead) 500 –
RH4x Axial(φ6.5 body/φ1.4 lead) 500 –
RJ4x Axial(φ6.5 body/φ1.4 lead) 500 –
RK4x Axial(φ6.5 body/φ1.4 lead) 500 –
RL4x Axial(φ6.5 body/φ1.4 lead) 500 –
194 Diodes
4 Diodes
Standard Packing Quantities

Series Name/Product Name Package
Bulk Taping
RM4x Axial(φ6.5 body/φ1.4 lead) 500 –
RN4x Axial(φ6.5 body/φ1.4 lead) 500 –
RS4x Axial(φ6.5 body/φ1.4 lead) 500 –
RU4x Axial(φ6.5 body/φ1.4 lead) 500 –
RW5x Axial(φ6.5 body/φ1.4 lead) 500 –
SPB-x D pack(Surface-mount) – VL:3000(Reel) VR:3000(Reel)
SPX-xxx D pack(Surface-mount) – VL:3000(Reel) VR:3000(Reel)
RBV-1xxx RVB-60 250 –
RBV-2xxx RVB-60 250 –
RBV-6xx RVB-60 250 –
SJPA-xx SJP – V:1800(Reel)
SJPB-xx SJP – V:1800(Reel)
SJPE-xx SJP – V:1800(Reel)
SJPJ-xx SJP – V:1800(Reel)
SJPL-xx SJP – V:1800(Reel)
SJPM-xx SJP – V:1800(Reel)
SJPW-xx SJP – V:1800(Reel)
SJPX-xx SJP – V:1800(Reel)
SJPZ-xx SJP – V:1800(Reel)
SZ-10xx SZ-10(Surface-mount) – VL:750(Reel) VR:750(Reel)
FMC-2xU TO220F(2-element) 500 –
FM2-2202 TO220F(Center-tap) 500 –
FMB-2x TO220F(Center-tap) 500 –
FME-2x TO220F(Center-tap) 500 –
FMEN-2x TO220F(Center-tap) 500 –
FMG-1x TO220F(Center-tap) 500 –
FMG-2x TO220F(Center-tap) 500 –
FMJ-2x TO220F(Center-tap) 500 –
FML-1x TO220F(Center-tap) 500 –
FML-2x TO220F(Center-tap) 500 –
FMM-2x TO220F(Center-tap) 500 –
FMU-1x TO220F(Center-tap) 500 –
FMU-2x TO220F(Center-tap) 500 –
FMW-2x TO220F(Center-tap) 500 –
FMX-1x TO220F(Center-tap) 500 –
FMX-2x TO220F(Center-tap) 500 –
FMXA-2x TO220F(Center-tap) 500 –
FMXB-2x TO220F(Center-tap) 500 –
FMXJ-2x TO220F(Center-tap) 500 –
FMB-G1x TO220F-2Pin 500 –
FMB-G2x TO220F-2Pin 500 –
FMC-G2x TO220F-2Pin 500 –
FMD-G2x TO220F-2Pin 500 –
FMG-G2x TO220F-2Pin 500 –
FML-G1x TO220F-2Pin 500 –
FML-G2x TO220F-2Pin 500 –
FMN-G1x TO220F-2Pin 500 –
FMP-G1x TO220F-2Pin 500 –
FMQ-G1x TO220F-2Pin 500 –
FMQ-G2x TO220F-2Pin 500 –
FMU-G1x TO220F-2Pin 500 –
FMU-G2x TO220F-2Pin 500 –
FMXA-1x TO220F-2Pin 500 –
FMX-G1x TO220F-2Pin 500 –
FMX-G2x TO220F-2Pin 500 –
FMC-2xUA TO220F-2Pin(2-element) 500 –
MPE-2x TO220S(Surface-mount) – VR:1000(Reel)
MPL-102S TO220S(Surface-mount) – VR:1000(Reel)
MPEN-2x TO263(Surface-mount) – VL:800(Reel) VR:800(Reel)
MPL-1036S TO263(Surface-mount) – VL:800(Reel) VR:800(Reel)
FMD-4x TO3PF(Center-tap) 500 –
FMXA-4x TO3PF(Center-tap) 500 –
FML-4x TO-3PF(Center-tap) 500 –
FMP-G5x TO3PF-2Pin 500 –
FMQ-G5x TO3PF-2Pin 500 –
FMR-G5x TO3PF-2Pin 500 –
FMV-G5x TO3PF-2Pin 500 –
Diodes 195
4 Diodes
Taping Specifications
Taping Name Taping Type, Dimensions (mm) Packing Dimensions (mm) and Packing Note Quantity
Axial taping Reel

+ 0.5
0.5max 1.0 ---1.0 Part No., Lot No.,
Quantity 5,000 pcs/reel
V 15 ±2
Core Flange 2.7φ body
29 ±1
75 ±1
2.4φ body
5.08 + 0.38
340 ±2
83 ±2
To specify the 3,000 pcs/reel
(4φ body)
max
(Blue) (White)
taping type, add
0.5
+ 0.5 +1 + 0.5
6.0 52.0 6.0
25 ±0.1
0 0 0
a suffix [V]
0.5max 75 ±2
Holddown clip 81±2
Axial taping Ammunition (Ammo) pack

+ 0.5
0.5max 1.0 ---1.0 2,000 pcs/box
(2.7φ body)
V1 Broken lines:
perforation 3,000 pcs/box
5.08 + 0.38
(2.4φ body)
77max
1,000 pcs/box
To specify the
(Blue) (White) (4φ body)
max
taping type, add ax

77m
0.5
+ 0.5 +1 + 0.5
6.0 0 52.0 0 6.0 0
255max
a suffix [V1]
0.5max Part No., Lot No., Quantity

+ 0.5
0.5max 1.0 ---1.0
V0 Broken lines:
perforation
2,000 pcs/box
(2.7φ body)
5.08 + 0.38
95max
3,000 pcs/box
To specify the (2.4φ body)
(Blue) (White)
max
taping type, add ax

0.5
+ 0.5 +1 + 0.5
6.0 0 26.0 0 6.0 0
255max 51m
a suffix [V0]
0.5max Part No., Lot No., Quantity
Axial taping Reel

+ 0.5 Part No., Lot No.,
0.5max 1.0 ---1.0
V3 15 ±2
Quantity
Core Flange
29 ±1
75 ±1
1,500 pcs/reel
10 --- 0.2
(5.2φ body)
+
340 ±2
±2
83
To specify the
max
taping type, add (Blue) (White) +

25±0.1
1.0
+ 0.5 +1 0.5
6.0 0 52.0 0 6.0 0
a suffix [V3] 75 ±2
0.5max Holddown clip 81±2

+ 0.5
0.5max 1.0 ---1.0 Broken lines:
V4 perforation
1,000 pcs/box
10 --- 0.2
120max
(5.2φ body)
+
Trade
To specify the Mark
(Blue) (White)
max
taping type, add + 0.5

1.0
+ 0.5 +1
6.0 0 52.0 0 6.0 0
a suffix [V4] ax
77m
0.5max 255max
Part No., Lot No., Quantity
196 Diodes
4 Diodes
Radial taping 6.35 ±1.3 12.7 ±1.0 Ammunition (Ammo) pack

2.6max
0 ±2.0
W Broken lines:
16.0 ±0.5 (11.5)

4.2 perforation
4,000 pcs/box
3.0 max
27.5 ±0.5
max
12.7 ±1.0
2.7φ body
140max
±1.0
12.7
ANODE
0.6φ lead only
9.0±0.5
12.5min
CATH
18.0 –0.5
+1.0
ODE
To specify the
taping type, add
ax
55m
a suffix [W]
0.7±0.2
3.85 ±0.7 5.0 ±0.5 1.0 max 4.0 ±0.2 340max
12.7 ±0.3
Part No., Lot No., Quantity
Radial taping Ammunition (Ammo) pack

(for A0 series) 6.35 ±1.3 12.7 ±1.0 0 ±2.0
WS
12.5min 1.0 max
+0.5
9.0 ±0.5
18.0 –0
11max
18.0 –0.5
+1.0
To specify the
taping type, add
+0.8
0.7 ±0.2
a suffix [WS] 3.85±0.7 5.0 –0.2 4.0 ±0.2 Part No., Lot No.,
Quantity
12.7 ±0.3
2,500 pcs/box
150max
ANODE
Radial taping CATHOD
(2.4φ body)
(for A0 series) E
(5.5) 0 +--- 1 0 +--- 1
(30°)
1max
ax
WK
45m
1.5
2.75+--- 0.5
22.2 +--- 1
19.8 +--- 1.0
+ 1.0
16.5 --- 0.5
340max
11max
9 +--- 0.5
12.5min
18 +--- 10.5
To specify the
taping type, add φ 4.0 +--- 0.2 5+--- 0.8
0.2 3.85+--- 0.7
a suffix [WK] φ 3.0 +--- 0.2 12.7+--- 0.3
12.7+--- 1
0.52 +--- 0.2
High Voltage Rectifier Diodes Taping Specifications

Axial taping
5±0.5
V1
1.2 max
Part Number
Lot No.
To specify the Quantity 5000 pcs/reel
taping type, add φ 29 ±1.5
φ 75 ±1.5
a suffix [V1] 1.0 max
25 ±1
6 ±1.0 58 ±1 6 ±1.0
φ 340±2
3.5±0.5
Axial taping
VD
1.0 max
Part Number
Lot No.
Quantity 8000 pcs/reel
To specify the φ 29 ±1.5
taping type, add φ 75 ±1.5
25 ±1
a suffix [VD] 1.0max
6 ±1.0 58 ±1 6 ±1.0 φ 340±2
Diodes 197
4 Diodes
Surface-Mount Taping Specifications

Emboss Taping Reel

φ1.5 +0.1
1.75±0.1
–0 4±0.1 Feeding Direction
4.5±0.2
2±0.05
VL 2.0±0.5
2.6±0.2
φ 13±0.5
–0.05
5.5±0.05
0.05 +0.1
12 +0.3
–0.1
φ 60±2
VR
2.15±0.2
5.6±0.1
1800 pcs/reel
SJP
φ R1.0
VL VR φ 21±0.8
To specify the 1.3±0.4 1.3±0.4
taping type, add 5.0 +0.4 1.5±0.2
–0.1
4±0.1 2.4±0.1
a suffix [VL] or (1) Device is placed in the embossed pocket with the mounting electrode down. 2.9±0.1
[VR] (2) 150 to 200mm leader tape is attached to the tip of the tape.
(3) 10 or more blank pockets are provided at both the beginning and
the end of the tape. φ 180 +0
–3 13±1.5 1.2±0.5
Feeding Direction Part Number
VL Taping Name
(Type)
Quantity
Lot No.
To specify the 3000 pcs/reel

2.0±0.1 Material
taping type, add 1.75±0.1
4.0 ±0.1
(2.0)
−0.1 °) Disc: Double-sided White Cardboard
φ 1.5 +−0.1
0 8.0 3.4 max R9
5 ±1 (40
a suffix [VL] (1
20 °
)
Core: Styrofoam
D Pack
R40±1
4±0.5
7.5 ±0.1
16.0 ±0.3
13.5±0.1
(6.0)
10.6±0.1
Feeding Direction
VR 0.3±0.1
23 max
6.8 ±0.1 φ 1.6 −+00.1 2±0.5
±0.5
2±0.5 17.5
taping type, add

φ 13±1
a suffix [VR] φ 80±1
φ 330 ±2
Feeding Direction
(2.0)
VR
(R °) (R5) (R5)
13
0) (40 (1
20 °
)
R50±1
TO-220S
4±0.5
2.0±0.1
1.75±0.1
(6.0)
φ 1.5 +−0.1 4.0 ±0.1 12.0 ±0.1

4.9 max 1000 pcs/reel
0
To specify the
taping type, add
11.5±0.1
a suffix [VR]
24.0 ±0.3
21.05 ±0.1
13.9±0.1
31 max
±0.5 ±0.5
2
10.8 ±0.1 0.4±0.1

2±0.5 25.5
φ 3.0 max φ13±0.5

φ100 ±1
φ 330 ±2
Power Zener Surface-Mount Taping Specifications

Feeding Direction
VL 35° 1 3 B 1 3 B

taping type, φ 1.50±0.1
1.75±0.1
φ 10
4.00±0.1
5.64±0.1
add a suffix 2.00±0.1
[VL]
4°
φ 10
11.50±0.1
B
22
φ 100±1
φ 330±2
φ13±0.2
+0.3
24.00–0.1
80
60
40
20
16.00±0.1
120°
25.5±1
29.5±1
4°
VR
R135
Feeding Direction φ 1.50±0.25

R TYPE L TYPE 16.00±0.1
0.40±0.05
To specify the
10.80±0.1 9±0.5
750 pcs/reel
8° 8°
7 ±0.5
taping type, 2±0.5 Label the Part No., Quantity,

φ 21±0.8
add a suffix Lot No. and seal it on the reel
[VR]
5
±0.
5
φ13
±0.
2
13±0.5
198 Diodes
4 Diodes
Application Note
■ General Description ■ Surface-Mount Diodes
(1) Lead Forming (Part Number Type: SJP)
When forming leads, hold the lead wire on the main body's side so as
to prevent stress from being applied to the main body. Soldering (common to flow and reflow)
i) Use rosin based flux. Never use acidic fluxes.
Hold ii) To prevent a large thermal stress, preheat within 1 to 2 minutes at
Axial type
150°C and solder within the usable range shown below.
300
Soldering Temperature (°C)

Bend
Usable Range
280
Hold 260
Frame type 240
220
Bend 200
180
160
(2) Mounting 0 10 20 30 40 50 60 70 80
To mount a frame-type diode on a heatsink, use its screw hole. Do not
Time (sec)
fix its resin body as the silicon chip may get broken.
(3) Temperature Measurement iii) For using a soldering iron, use the following references:
For an axial type diode, measure the temperature of the lead wire on Temperature of soldering iron tip:
the main body side. The thermocouple to be used must be as thin as Lower than 300ºC
possible (approximately φ0.125mm). (Power of the soldering
iron: 30W or lower)
(4) Temperature Rise Consideration The soldering tip must
A diode’s temperature increases due to losses from forward current, be as thin as possible.
reverse current and reverse recovery time. Soldering time: Less than 10 seconds
In normal use, losses are mainly attributable to forward current and
voltage. However, in high frequency circuits such as switching power
supplies, losses due to reverse recovery time also occurs. Moreover, in
diodes having large reverse currents like Schottky barrier diode losses Reference SJP Series Copper Laminate Pattern
due to reverse current cannot be disregarded.
(Unit : mm)
Forward loss tends to decrease at high temperatures. However,
reverse loss tends to increase at high temperatures. Therefore, it is
necessary to consider the ambient temperature when verifying 2.0 2.0
operation.
2.0
(5) Inrush Current

4.0 to 4.2
In a capacitor-input type rectifier circuit, inrush current flows when the
power supply is switched on. The peak value of this inrush current
shall be set less than peak forward surge current IFSM (I2t can also be
obtained but set the minimum pulse width to 1 msec). The value of
IFSM is guaranteed for a single shot only. If the inrush current is
repeated within a short period of time, the derating has to be taken into
account.
(6) Peak Value Current

Considering normal use, limit of the peak value current must be set to
10 times of the average current IF (AV). If the peak value increases.
the diode's forward loss also increases. In this case, check the
temperature rise.
● Carefully study the mounting method when the usage environment is prone to
creeping discharge.
Contact us if there is any unclear point.
Diodes 199
4 Diodes
Marking Guide
■
1 Axial (A0) ■
6 TO-3PF, FM100 type
qPart Number (abbreviation)
qPart Number: Full name
The AM01 is indicated as “M.”
wPolarity: Rectifier Symbol
➃ wClass FMXA4203 ➀ eLot No.
Z: 200V None: 400V A: 600V
➁ First letter: Year (Last digit of year)
D
M A
9
B: 800V C: 1000V
Second letter: Month (1 to 9, O, N, D)
eManufacturing date 5905 ➂
Third and fourth letters: Day
First letter: Year (Last digit of year)
Laser marking or White ink marking
➀ ➁ ➂ rCathode band: Continuous band (1-chip type)
Color of the band: White(Yellow for AU02 series)
FMQ-G5GS ➀
■
2 Axial (E0, E1)
qPart Number (abbreviation)
➁
EM01, EM2, EM1 are indicated as MO, M2 6905 ➂
and M1, respectively.
MO ➀ wClass
C ➁ Z: 200V None: 400V A: 600V
87 ➂ B: 800V C: 1000V F: 1500V
■
7 Surface-Mount (SJP)
But EU02A is indicated as A2 and EU2YX as Y.
➃
eManufacturing date
qPart Number
Cathode band First letter: Year (Last digit of year)
Color: White Second letter: Month (1 to 9, O, N, D)
eLot No.
rManufacturing period
• First 10 days of month
Second letter: Month (1 to 9, O, N, and D)
•• Middle 10 days of month
••• Last 10 days of month
■
8 Surface-Mount (D pack)
■
3 Axial (R1, R2, R3, R4)
qPart Number
qPart Number: 2 set marking
wManufacturing date and period: 2 set marking B 64S ➀ eLot No.
First letter: Year (Last digit of year) ➁ First letter: Lot code
➂ Second letter: Month (1 to 9, O, N, D)
Second letter: Year (Last digit of year)
RK44 ➀
• First 10 days of month
•• Middle 10 days of month
A 6H ➂ Third letter: Month (A to M except I)
••• Last 10 days of month
96 ➁ eCathode band
White: For Power Supply and SBD
Color of
the band: Yellow: For Medium speed ■
9 Surface-Mount (TO-220S)
Red: For Fast and ultrafast
qPart Number
■
4 RBV E 29G ➀ eLot No.
qPart Number
➁ First letter: Year (Last digit of year)
wLot No.
RBV 602 ➀ First letter: Year (Last digit of year) 9C1 ➂ Second letter: Month (A to M except I)
Third letter: Week
9 9B ➁ Third letter: A—First 10 days of month
➂ B—Middle 10 days of month
C—Last 10 days of month
eInput/output marking
■
10 SZ-10 Series
qPart Number
wLot No.
■
5 TO-220F type Second letter: Month (1 to 9, O, N, and D)
qPart Number
Third letter: Day
FMU-12S is indicated as “FMU12S.”
FMU12S ➀ eLot No.
➁ Second letter: Month (1 to 9, O, N, D)
8512 ➂ Third and fourth letters: Day
■
11 Silicon Varistors
Refer to P213
(1-chip type) qPart Number: Excluding last letter

FML-G12S is indicated as “FML-G12.”
wLast letter of Part Number
FMLG12 ➀ ePolarity: Rectifier Symbol
rLot No.
➁ S ➂ First letter: Year (Last digit of year)
0125 ➃ Second letter: Month (1 to 9, O, N, D)
200 Diodes
4-1 Rectifier Diodes
●Surface-Mount
IF (AV) IFSM IR IR(H)
VRM (A) (A) Tj Tstg VF IF (µA) (µA) Ta Rth(j-l) Mass
(V) Values in parentheses Package Part Number (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
50Hz
are for the products
with heatsinks Single Half Sine Wave max max max (°C/W)
400 2.0 Surface-Mount (SJP) SJPM-H4 45 -40 to +150 1.1 2.0 10 50 150(Tj) 20 0.072
●Thru-Hole
VRM (A) Package (A) Tj Tstg VF IF (µA) (µA) Ta Rth(j-l) Mass
(V) Values in parentheses Axial Part Number (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
are for the products (Body Diameter/Lead Diameter)
50Hz
1.0 Axial(φ2.7/φ0.78) EM 1Y 45 -40 to +150 0.97 1.0 10 50 100 17 0.3

100
1.7(3.0) Axial(φ6.5/φ1.4) RM 4Y 200 -40 to +150 0.95 3.0 10 50 100 8 1.2
1.0 Axial(φ2.4/φ0.6) AM01Z 35 -40 to +150 0.98 1.0 10 50 100 22 0.13
1.0 Axial(φ2.7/φ0.6) EM01Z 45 -40 to +150 0.97 1.0 10 50 100 20 0.2
1.0 Axial(φ2.7/φ0.78) EM 1Z 45 -40 to +150 0.97 1.0 10 50 100 17 0.3
1.0 Axial(φ4.0/φ0.78) RM 1Z 50 -40 to +150 0.95 1.0 5 50 100 15 0.4
200 1.2 Axial(φ4.0/φ0.98) RO 2Z 80 -40 to +150 0.92 1.5 10 50 100 12 0.61
1.2 Axial(φ4.0/φ0.98) RM 2Z 100 -40 to +150 0.91 1.5 10 50 100 12 0.6
1.5 Axial(φ4.0/φ0.78) RM 10Z 120 -40 to +150 0.91 1.5 10 50 100 15 0.4
1.7(3.0) Axial(φ6.5/φ1.4) RM 4Z 200 -40 to +150 0.95 3.0 10 50 100 8 1.2
10 TO-220F(Center-tap) FMM-22S, R 100 -40 to +150 1.10 5.0 10 100 100 4.0 2.1
1.0 Axial(φ2.4/φ0.6) AM01 35 -40 to +150 0.98 1.0 10 50 100 22 0.13
1.0 Axial(φ2.7/φ0.6) EM01 45 -40 to +150 0.97 1.0 10 50 100 20 0.2
1.0 Axial(φ2.7/φ0.78) EM 1 45 -40 to +150 0.97 1.0 10 50 100 17 0.3
1.0 Axial(φ4.0/φ0.78) RM 1 50 -40 to +150 0.95 1.0 5 50 100 15 0.4
1.2 Axial(φ2.7/φ0.78) EM 2 80 -40 to +150 0.92 1.2 10 50 100 17 0.3
400 1.2 Axial(φ4.0/φ0.98) RO 2 80 -40 to +150 0.92 1.5 10 50 100 12 0.61
1.2 Axial(φ4.0/φ0.98) RM 2 100 -40 to +150 0.91 1.5 10 50 100 12 0.6
1.2 Axial(φ4.0/φ0.78) RM 10 150 -40 to +150 0.91 1.5 10 50 100 15 0.4
2.5 Axial(φ5.2/φ1.2) RM 3 150 -40 to +150 0.95 2.5 10 100 150 10 1.0
1.7(3.0) Axial(φ6.5/φ1.4) RM 4 200 -40 to +150 0.95 3.0 10 50 100 8 1.2
1.0 Axial(φ2.4/φ0.6) AM01A 35 -40 to +150 0.98 1.0 10 50 100 22 0.13
1.0 Axial(φ2.7/φ0.6) EM01A 45 -40 to +150 0.97 1.0 10 50 100 20 0.2
1.0 Axial(φ2.7/φ0.78) EM 1A 45 -40 to +150 0.97 1.0 10 50 100 17 0.3
1.0 Axial(φ4.0/φ0.78) RM 1A 50 -40 to +150 0.95 1.0 5 50 100 15 0.4
1.2 Axial(φ2.7/φ0.78) EM 2A 80 -40 to +150 0.92 1.2 10 50 100 17 0.3
600 1.2 Axial(φ4.0/φ0.78) RM 11A 100 -40 to +150 0.92 1.5 10 50 100 15 0.4
1.2 Axial(φ4.0/φ0.98) RM 2A 100 -40 to +150 0.91 1.5 10 50 100 12 0.6
1.2 Axial(φ4.0/φ0.78) RM 10A 150 -40 to +150 0.91 1.5 10 50 100 15 0.4
2.5 Axial(φ5.2/φ1.2) RM 3A 150 -40 to +150 0.95 2.5 10 100 100 10 1.0
1.7(3.0) Axial(φ6.5/φ1.4) RM 4A 200 -40 to +150 0.95 3.0 10 50 100 8 1.2
1.8(3.2) Axial(φ6.5/φ1.4) RM 4AM 350 -40 to +150 0.92 3.5 10 50 100 8 1.2
0.8 Axial(φ4.0/φ0.78) RM 1B 40 -40 to +150 1.2 1.0 5 50 100 15 0.4
1.0 Axial(φ2.7/φ0.78) EM 1B 35 -40 to +150 0.97 1.0 20 100 100 17 0.3
1.2 Axial(φ2.7/φ0.78) EM 2B 80 -40 to +150 0.92 1.2 10 50 100 17 0.3
1.2 Axial(φ4.0/φ0.98) RO 2B 80 -40 to +150 0.92 1.5 10 50 100 12 0.61
800
1.2 Axial(φ4.0/φ0.78) RM 11B 100 -40 to +150 0.92 1.5 10 50 100 15 0.4
1.2 Axial(φ4.0/φ0.98) RM 2B 100 -40 to +150 0.91 1.5 10 50 100 12 0.6
1.2 Axial(φ4.0/φ0.78) RM 10B 150 -40 to +150 0.91 1.5 10 50 100 15 0.4
2.5 Axial(φ5.2/φ1.2) RM 3B 150 -40 to +150 0.95 2.5 10 100 150 10 1.0
0.8 Axial(φ4.0/φ0.78) RM 1C 40 -40 to +150 1.2 1.0 5 50 100 15 0.4
1.0 Axial(φ2.7/φ0.78) EM 1C 35 -40 to +150 0.97 1.0 20 100 100 17 0.3
1.2 Axial(φ4.0/φ0.98) RO 2C 80 -40 to +150 0.92 1.5 10 50 100 12 0.61
1000 1.2 Axial(φ4.0/φ0.78) RM 11C 100 -40 to +150 0.92 1.5 10 50 100 15 0.4
1.2 Axial(φ4.0/φ0.98) RM 2C 100 -40 to +150 0.91 1.5 10 50 100 12 0.6
2.0 Axial(φ5.2/φ1.2) RM 3C 100 -40 to +150 0.95 2.5 10 300 150 (Tj) 10 1.0
1.7(3.0) Axial(φ6.5/φ1.4) RM 4C 150 -40 to +150 0.95 3.0 10 50 100 8 1.2
Diodes 201
4-1 Rectifier Diodes
●Bridge
VRM (A) (A) Tj Tstg VF IF (µA) (µA) Ta Rth(j-l) Mass
(V) Values in parentheses Package Part Number (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
50Hz
100 6.0 RBV-60 RBV-601 120 -40 to +150 1.00 3.0 10 100 100 3.0 6.45
6.0 RBV-60 RBV-602L*1 100 -40 to +150 1.00 3.0 250 1000 100 3.0 6.45
200
6.0 RBV-60 RBV-602 120 -40 to +150 1.00 3.0 10 100 100 3.0 6.45
400 6.0 RBV-60 RBV-604 120 -40 to +150 1.05 3.0 10 100 100 3.0 6.45
6.0 RBV-60 RBV-606 120 -40 to +150 1.05 3.0 10 100 100 3.0 6.45
13 RBV-60 RBV-1306 80 -40 to +150 1.20 6.5 10 100 100 1.5 6.45
15 RBV-60 RBV-1506S 150 -40 to +150 1.10 7.5 10 200 100 1.5 6.45
600 15 RBV-60 RBV-1506J 150 -40 to +175 1.10 7.5 10 200 150 1.5 6.45
15 RBV-60 RBV-1506 200 -40 to +150 1.05 7.5 50 200 100 1.5 6.45
25 RBV-60 RBV-2506 350 -40 to +150 1.05 12.5 50 200 100 1.5 6.45
30 RBV-60 RBV-3006 400 -40 to +150 0.96 15 50 500 150 1.5 6.45
800 6.0 RBV-60 RBV-608 170 -40 to +150 0.95 3.0 10 100 100 3.0 6.45
1000 15 RBV-60 RBV-150C 200 -40 to +150 1.05 7.5 50 200 100 1.5 6.45
*1: Ultrafast recovery diode (trr=50ns)
202 Diodes
4-2 Fast Recovery Diodes
●Thru-Hole
IF (AV) IFSM IR IR(H) trrq trrw
VRM (A) Package Part (A) Tj Tstg VF IF (µA) (µA) Ta (µs) IF/IRP (µs) IF/IRP Rth(j-l) Mass
(V) Values in parentheses Axial Number 50Hz (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) (mA) (mA) Rth(j-c) (g)
with heatsinks (Body Diameter/Lead Diameter) Single Half Sine Wave max max max (°C/W)
0.5 Axial(φ2.7/φ0.6) EU01Z 15 -40 to +150 1.0 0.5 10 150 100 0.4 10/10 0.18 10/20 20 0.2
0.5 Axial(φ2.7/φ0.78) EU 1Z 15 -40 to +150 1.0 0.5 10 150 100 0.4 10/10 0.18 10/20 17 0.3
0.5 Axial(φ2.4/φ0.6) AU01Z 15 -40 to +150 1.7 0.5 10 150 100 0.4 10/10 0.18 10/20 22 0.13
0.6 Axial(φ4.0/φ0.78) RH 1Z 35 -40 to +150 1.3 0.6 5 70 150 4 10/10 1.3 10/20 15 0.4
0.7 Axial(φ2.7/φ0.78) ES 1Z 30 -40 to +150 2.5 0.8 10 200 100 1.5 10/10 0.6 10/20 17 0.3
0.8 Axial(φ2.4/φ0.6) AU02Z 25 -40 to +150 1.3 0.8 10 250 100 0.4 10/10 0.18 10/20 22 0.13
200 1.0 Axial(φ2.7/φ0.6) EU02Z 15 -40 to +150 1.4 1.0 10 300 100 0.4 10/10 0.18 10/20 20 0.2
1.0 Axial(φ2.7/φ0.78) EU 2Z 15 -40 to +150 1.4 1.0 10 300 100 0.4 10/10 0.18 10/20 17 0.3
1.0 Axial(φ4.0/φ0.78) RU 2Z 20 -40 to +150 1.5 1.0 10 300 100 0.4 10/10 0.18 10/20 15 0.4
1.5(3.5) Axial(φ5.2/φ1.2) RU 30Z 80 -40 to +150 0.97 3.5 10 300 100 0.4 10/10 0.18 10/20 10 1.0
2.0(3.5) Axial(φ6.5/φ1.4) RU 4Z 70 -40 to +150 1.3 3.5 10 300 100 0.4 10/10 0.18 10/20 8 1.2
5.0 TO-220F(Center-tap) FMU-12S, R 30 -40 to +150 1.5 2.5 50 500 100 0.4 100/100 0.18 100/200 4.0 2.1
10 TO-220F(Center-tap) FMU-22S, R 40 -40 to +150 1.5 5.0 50 500 100 0.4 100/100 0.18 100/200 4.0 2.1
0.25 Axial(φ2.7/φ0.6) EU01 15 -40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20 20 0.2
0.25 Axial(φ2.7/φ0.78) EU 1 15 -40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20 17 0.3
0.25 Axial(φ4.0/φ0.78) RU 1 15 -40 to +150 2.5 0.25 10 200 100 0.4 10/10 0.18 10/20 15 0.4
0.5 Axial(φ2.4/φ0.6) AU01 15 -40 to +150 1.7 0.5 10 150 100 0.4 10/10 0.18 10/20 22 0.13
0.6 Axial(φ2.4/φ0.6) AS01 20 -40 to +150 1.5 0.6 10 50 100 1.5 10/10 0.6 10/20 22 0.13
0.6 Axial(φ2.7/φ0.78) EH 1 30 -40 to +150 1.35 0.6 10 200 150 4 10/10 1.3 10/20 17 0.3
0.7 Axial(φ2.7/φ0.78) ES 1 30 -40 to +150 2.5 0.8 10 200 100 1.5 10/10 0.6 10/20 20 0.2
0.8 Axial(φ2.4/φ0.6) AU02 25 -40 to +150 1.3 0.8 10 250 100 0.4 10/10 0.18 10/20 22 0.13
1.0 Axial(φ2.7/φ0.6) EU02 15 -40 to +150 1.4 1.0 10 300 100 0.4 10/10 0.18 10/20 20 0.2
400 1.0 Axial(φ2.7/φ0.78) EU 2 15 -40 to +150 1.4 1.0 10 300 100 0.4 10/10 0.18 10/20 17 0.3
1.1 Axial(φ4.0/φ0.78) RU 2M 20 -40 to +150 1.2 1.1 10 300 100 0.4 10/10 0.18 10/20 15 0.4
1.5 Axial(φ4.0/φ0.98) RU 3 20 -40 to +150 1.5 1.5 10 400 100 0.4 10/10 0.18 10/20 12 0.6
1.5 Axial(φ4.0/φ0.98) RU 3M 50 -40 to +150 1.1 1.5 10 350 100 0.4 10/10 0.18 10/20 12 0.6
2.0 Axial(φ5.2/φ1.2) RU 30 200 -40 to +150 0.95 2.0 10 300 100 0.4 100/100 0.18 100/200 10 1.0
3.0 Axial(φ5.2/φ1.2) RU 31 150 -40 to +150 1.2 3.0 50 500 100 0.4 100/100 0.18 100/200 10 1.0
1.5(3.0) Axial(φ6.5/φ1.4) RU 4 50 -40 to +150 1.5 3.0 10 300 100 0.4 10/10 0.18 10/20 8 1.2
2.0(3.5) Axial(φ6.5/φ1.4) RU 4M 70 -40 to +150 1.3 3.5 10 300 100 0.4 100/100 0.18 100/200 8 1.2
Diodes 203
4-2 Fast Recovery Diodes

VRM (A) Package Part (A) Tj Tstg VF IF (µA) (µA) Ta (µs) IF/IRP (µs) IF/IRP Rth(j-l) Mass
(V) Values in parentheses Axial Number (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) (mA) (mA) Rth(j-c) (g)
are for the products 50Hz
with heatsinks (Body Diameter/Lead Diameter) Single Half Sine Wave max max max (°C/W)
0.25 Axial(φ4.0/φ0.78) RU 1A 15 -40 to +150 2.5 0.25 10 200 100 0.4 10/10 0.18 10/20 15 0.4
0.5 Axial(φ2.4/φ0.6) AU01A 15 -40 to +150 1.7 0.5 10 150 100 0.4 10/10 0.18 10/20 22 0.13
0.6 Axial(φ4.0/φ0.78) RF 1A 15 -40 to +150 2.0 0.6 10 200 100 0.4 10/10 0.18 10/20 15 0.4
0.6 Axial(φ2.4/φ0.6) AS01A 20 -40 to +150 1.5 0.6 10 50 100 1.5 10/10 0.6 10/20 22 0.13
0.6 Axial(φ4.0/φ0.78) RH 1A 35 -40 to +150 1.3 0.6 5 70 150 4 10/10 1.3 10/20 15 0.4
0.7 Axial(φ2.7/φ0.6) ES01A 30 -40 to +150 2.5 0.8 10 200 100 1.5 10/10 0.6 10/20 20 0.2
0.7 Axial(φ4.0/φ0.78) RS 1A 30 -40 to +150 2.5 0.8 10 200 100 1.5 10/10 0.6 10/20 15 0.4
0.8 Axial(φ2.4/φ0.6) AU02A 25 -40 to +150 1.3 0.8 10 250 100 0.4 10/10 0.18 10/20 22 0.13
1.0 Axial(φ2.7/φ0.6) EU02A 15 -40 to +150 1.4 1.0 10 300 100 0.4 10/10 0.18 10/20 20 0.2
1.0 Axial(φ2.7/φ0.78) EU 2A 15 -40 to +150 1.4 1.0 10 300 100 0.4 10/10 0.18 10/20 17 0.3
1.0 Axial(φ4.0/φ0.78) RU 2 20 -40 to +150 1.5 1.0 10 300 100 0.4 10/10 0.18 10/20 15 0.4
1.1 Axial(φ4.0/φ0.78) RU 2AM 20 -40 to +150 1.2 1.1 10 300 100 0.4 10/10 0.18 10/20 15 0.4
1.5 Axial(φ4.0/φ0.98) RU 3A 20 -40 to +150 1.5 1.5 10 400 100 0.4 10/10 0.18 10/20 12 0.6
600
1.5 Axial(φ4.0/φ0.78) RU 20A 50 -40 to +150 1.1 1.5 10 350 100 0.4 10/10 0.18 10/20 15 0.4
1.5 Axial(φ4.0/φ0.98) RU 3AM 50 -40 to +150 1.1 1.5 10 350 100 0.4 10/10 0.18 10/20 12 0.6
1.5(3.0) Axial(φ6.5/φ1.4) RU 4A 50 -40 to +150 1.5 3.0 10 300 100 0.4 10/10 0.18 10/20 8 1.2
2.0(3.5) Axial(φ6.5/φ1.4) RU 4AMS 70 -40 to +150 1.3 3.5 10 300 100 0.4 100/100 0.18 100/200 8 1.2
3.0 Axial(φ5.2/φ1.2) RY3A 50 -40 to +150 1.15 3.0 10 1000 150(Tj) 0.2 100/100 0.1 100/200 10 1.0
3.0 Axial(φ4.0/φ0.98) RY2A 50 -40 to +150 1.15 3.0 10 1000 150(Tj) 0.2 100/100 0.1 100/200 12 0.6
3.0 TO-220F2Pin FMY-1036S 50 -40 to +150 1.15 3.0 10 1000 150 0.2 100/100 0.1 100/200 4.0 2.1
5.0 TO-220F2Pin FMU-G16S 30 -40 to +150 1.25 5.0 50 500 100 0.4 100/100 0.18 100/200 4.0 2.1
10 TO-220F2Pin FMU-G26S 40 -40 to +150 1.35 10 50 500 100 0.4 100/100 0.18 100/200 4.0 2.1
10 TO-220F2Pin FMY-1106S 180 -40 to +150 1.15 10 30 3000 150 0.2 100/100 0.1 100/200 4.0 2.1
20 TO-220F(Center-tap) FMY-2206S 180 -40 to +150 1.15 10 30 3000 150 0.2 100/100 0.1 100/200 4.0 2.1
0.25 Axial(φ4.0/φ0.78) RU 1B 15 -40 to +150 2.5 0.25 10 200 100 0.4 10/10 0.18 10/20 15 0.4
0.6 Axial(φ4.0/φ0.78) RF 1B 15 -40 to +150 2.0 0.6 10 200 100 0.4 10/10 0.18 10/20 15 0.4
0.6 Axial(φ4.0/φ0.78) RH 1B 35 -40 to +150 1.3 0.6 5 70 150 4 10/10 1.3 10/20 15 0.4
800 0.7 Axial(φ4.0/φ0.78) RS 1B 30 -40 to +150 2.5 0.8 10 200 100 1.5 10/10 0.6 10/20 20 0.4
1.0 Axial(φ4.0/φ0.78) RU 2B 20 -40 to +150 1.5 1.0 10 300 100 0.4 10/10 0.18 10/20 15 0.4
1.1 Axial(φ4.0/φ0.98) RU 3B 20 -40 to +150 1.5 1.0 10 400 100 0.4 10/10 0.18 10/20 12 0.6
1.5(3.0) Axial(φ6.5/φ1.4) RU 4B 50 -40 to +150 1.6 3.0 10 500 100 0.4 10/10 0.18 10/20 8 1.2
0.2 Axial(φ4.0/φ0.78) RU 1C 15 -40 to +150 3.0 0.25 10 200 100 0.4 10/10 0.18 10/20 15 0.4
0.6 Axial(φ4.0/φ0.78) RH 1C 35 -40 to +150 1.3 0.6 5 70 150 4 10/10 1.3 10/20 15 0.4
1000 0.8 Axial(φ4.0/φ0.78) RU 2C 20 -40 to +150 1.5 1.0 10 300 100 0.4 10/10 0.18 10/20 15 0.4
1.5 Axial(φ4.0/φ0.98) RU 3C 20 -40 to +150 2.5 1.5 10 400 100 0.4 10/10 0.18 10/20 12 0.6
1.5(2.5) Axial(φ6.5/φ1.4) RU 4C 50 -40 to +150 1.6 3.0 50 500 100 0.4 100/100 0.18 100/200 8 1.2
1.0 Axial(φ4.0/φ0.98) RH 2D 60 -40 to +150 1.0 1.0 10 500 100 4 10/10 1.3 100/200 12 0.6
1300 1.2(1.5) Axial(φ6.5/φ1.4) RU 4D 50 -40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2
1.5(2.5) Axial(φ6.5/φ1.4) RU 4DS 50 -40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2
0.5 Axial(φ2.7/φ0.6) ES01F 20 -40 to +150 2.0 0.5 10 200 100 1.5 10/10 0.6 10/20 20 0.2
0.5 Axial(φ2.7/φ0.78) ES 1F 20 -40 to +150 2.0 0.5 10 200 100 1.5 10/10 0.6 10/20 17 0.3
1.0 Axial(φ4.0/φ0.98) RH 2F 60 -40 to +150 1.0 1.0 10 500 100 4 10/10 1.3 100/200 12 0.6
2.0 Axial(φ5.2/φ1.2) RS 3FS 50 -40 to +150 1.1 3.0 50 500 100 2 100/100 0.8 100/200 10 1.0
2.0 Axial(φ5.2/φ1.2) RP 3F 50 -40 to +150 1.7 2.0 50 500 100 0.7 500/500 0.3 500/1000 10 1.0
2.5 Axial(φ5.2/φ1.2) RH 3F 50 -40 to +150 1.3 2.5 50 500 100 4 100/100 1.3 100/200 10 1.0
1.5(2.5) Axial(φ6.5/φ1.4) RS 4FS 50 -40 to +150 1.5 3.0 50 500 100 1 100/100 0.4 100/200 8 1.2
1500 2.5 Axial(φ6.5/φ1.4) RH 4F 50 -40 to +150 1.5 2.5 10 350 100 4 100/100 1.3 100/200 8 1.2
5.0 TO-220F2Pin FMQ-G1FS 50 -40 to +150 5.0 5.0 50 500 150 0.7 500/500 0.3 500/1000 4.0 2.1
10 TO-220F2Pin FMQ-G2FS 50 -40 to +150 2.8 10 50 500 150(Tj) 0.5 500/500 0.2 500/1000 4.0 2.1
10 TO-220F2Pin FMU-G2FS 50 -40 to +150 1.6 10 50 6000 150(Tj) 0.6 500/500 0.25 500/1000 4.0 2.1
10 TO-220F2Pin FMQ-G2FLS 50 -40 to +150 1.8 10 50 500 150(Tj) 1.2 500/500 0.4 500/1000 4.0 2.1
10 TO-220F2Pin FMQ-G2FMS 50 -40 to +150 2.4 10 50 500 150 0.5 500/500 0.25 500/1000 4.0 2.1
10 TO-3PF2Pin FMQ-G5FMS 50 -40 to +150 2.4 10 50 500 100 0.5 500/500 0.2 500/1000 2 6.5
10 TO-3PF2Pin FMV-G5FS 50 -40 to +150 1.5 10 50 700 100 2.0 500/500 0.8 500/1000 2 6.5
1600 2.5 Axial(φ5.2/φ1.2) RH 3G 50 -40 to +150 1.3 2.5 50 500 100 4 100/100 1.3 100/200 10 1.0
1700 10 TO-3PF2Pin FMQ-G5GS 50 -40 to +150 2.7 10 100 500 100 0.5 500/500 0.2 500/1000 2 6.5
2000 0.2 Axial(φ4.0/φ0.78) RC 2 20 -40 to +150 2.0 0.2 10 300 100 4.0 10/10 1.3 10/20 15 0.4
*Under development
204 Diodes
4-3 Ultrafast Recovery Diodes
●Surface-Mount
VRM (A) (A) Tj Tstg VF IF (µA) (mA) Ta (ns) IF/IRP (ns) IF/IRP Rth(j-l) Mass
Part
(V) Values in parentheses Package Number 50Hz (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) (mA) (mA) (°C/W) (g)
with heatsinks Single Half Sine Wave max max max
1.0 Surface-Mount (SJP) SJPL-D2 25 -40 to +150 0.98 1.0 10 1 150 50 100/100 35 100/200 20 0.072
1.5 Surface-Mount (SJP) SJPX-F2 30 -40 to +150 0.98 1.5 10 2 150 30 100/100 25 100/200 20 0.072
2.0 Surface-Mount (SJP) SJPL-H2 25 -40 to +150 0.98 2.0 10 1 150 50 100/100 35 100/200 20 0.072
200
3.0 Surface-Mount (D pack) SPX-G32S 50 -40 to +150 0.98 3.0 50 10 100 30 100/100 25 100/200 5.0 0.41
6.0 Surface-Mount (D pack)Center-tap SPX-62S 80 -40 to +150 0.98 3.0 50 10 100 30 100/100 25 100/200 5.0 0.41
10.0 Surface-Mount (TO220S) MPL-102S 65 -40 to +150 0.98 5.0 100 0.2 150 40 100/100 30 100/200 2.5 1.4
300 2.0 Surface-Mount (SJP) SJPX-H3 20 -40 to +150 1.3 2.0 50 3 150 30 100/100 25 100/200 20 0.072
1.5 Surface-Mount(SJP) SJPL-F4 25 -40 to +150 1.3 1.5 10 0.05 150 50 100/100 35 100/200 20 0.072
400
3.0 Surface-Mount(SJP) SJPL-L4 30 -40 to +150 1.3 3.0 10 0.05 150 50 100/100 35 100/200 20 0.072
1.0 Surface-Mount(SJP) SJPD-D5 20 -40 to +150 1.4 1.0 10 0.1 150(Tj) 40 100/100 30 100/200 20 0.072
500
3.0 Surface-Mount(SJP) SJPD-L5 50 -40 to +150 1.4 3.0 15 0.15 150(Tj) 50 100/100 35 100/200 20 0.072
2.0 Surface-Mount (SJP) SJPL-H6 30 -40 to +150 1.5 2.0 50 0.1 150 50 100/100 35 100/200 20 0.072
600 2.0 Surface-Mount (SJP) SJPX-H6 20 -40 to +150 1.5 2.0 10 3 150 30 100/100 20 100/200 20 0.072
3.0 Surface-Mount (TO220S) MPL-1036S 50 -40 to +150 1.75 3.0 50 0.1 150 50 100/100 – – 2.5 1.4
●Thru-Hole
VRM (A) Package Part (A) Tj Tstg VF IF (µA) (mA) Ta (ns) IF/IRP (ns) IF/IRP Rth(j-l) Mass
(V) Values in parentheses Axial Number 50Hz (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) (mA) (mA) (°C/W) (g)
with heatsinks
(Body Diameter/Lead Diameter) Single Half Sine Wave max max max
1.0 Axial（ φ 2.4/ φ 0.6） AL01Z 25 −40 to +150 0.98 1.0 100 0.5 100 50 100/100 35 100/200 22 0.13
1.0 φ 2.7/
Axial（ φ 0.6） EN 01Z 50 −40 to +150 0.92 1.0 10 2 150（Tj） 100 100/100 50 100/200 20 0.2
1.5 φ 2.7/
Axial（ φ 0.78） EL 1Z 20 −40 to +150 0.98 1.5 100 0.5 100 100 100/100 50 100/200 17 0.3
1.5 φ 2.7/
Axial（ φ 0.6） EL02Z 25 −40 to +150 0.98 1.5 50 0.1 100 40 100/100 30 100/200 20 0.2
1.5 φ 4.0/
Axial（ φ 0.78） RN 1Z 60 −40 to +150 0.92 1.5 20 3 150（Tj） 100 100/100 50 100/200 15 0.4
2.0 φ 4.0/
Axial（ φ 0.78） RX 10Z 30 −40 to +150 0.98 2.0 50 3 150（Tj） 30 100/100 25 100/200 15 0.4
2.0 φ 4.0/
Axial（ φ 0.78） RL 10Z 30 −40 to +150 0.98 2.0 50 0.1 100 50 100/100 35 100/200 15 0.4
2.0 φ 4.0/
Axial（ φ 0.98） RL 2Z 30 −40 to +150 0.98 2.0 100 0.5 100 50 100/100 35 100/200 12 0.6
2.0 φ 4.0/
Axial（ φ 0.98） RN 2Z 70 −40 to +150 0.92 2.0 50 4 150（Tj） 100 100/100 50 100/200 12 0.6
3.0 φ 5.2/
Axial（ φ 1.2） RX 3Z 80 −40 to +150 0.98 3.0 50 10 100 30 100/100 25 100/200 10 1.0
3.0 φ 5.2/
Axial（ φ 1.2） RN 3Z 80 −40 to +150 0.92 3.0 50 6 150（Tj） 100 100/100 50 100/200 10 1.0
3.5 φ 5.2/
Axial（ φ 1.2） RL 3Z 80 −40 to +150 0.95 3.5 50 0.2 100 50 100/100 35 100/200 10 1.0
3.5 φ 6.5/
Axial（ φ 1.4） RL 4Z 80 −40 to +150 0.95 3.5 150 0.5 100 50 100/100 35 100/200 8 1.2
3.5 φ 6.5/
Axial（ φ 1.4） RN 4Z 120 −40 to +150 0.92 3.5 50 6 150（Tj） 100 100/100 50 100/200 8 1.2
5.0 TO-220F（Center-tap） FML-12S 35 −40 to +150 0.98 2.5 50 0.1 150（Tj） 40 100/100 30 100/200 4.0 2.1
200
5.0 TO-220F（Center-tap） FMX-12S 35 −40 to +150 0.98 2.5 50 10 100 30 100/100 25 100/200 4.0 2.1
5.0 TO-220F2Pin FML-G12S 65 −40 to +150 0.98 5.0 250 1 100 40 100/100 30 100/200 4.0 2.1
5.0 TO-220F2Pin FMX-G12S 65 −40 to +150 0.98 5.0 100 20 100 30 100/100 25 100/200 4.0 2.1
5.0 TO-220F2Pin FMN-G12S 100 −40 to +150 0.92 5.0 100 10 150 100 100/100 50 100/200 4.0 2.1
10.0 TO-220F（Center-tap） FMXA-2102ST 100 −40 to +150 1.2 5.0 100 20 150（Tj） 25 500/500 − − 4.0 2.1
10.0 TO-220F（Center-tap） FML-22S 65 −40 to +150 0.98 5.0 250 1 100 40 100/100 30 100/200 4.0 2.1
10.0 TO-220F2Pin FML-G22S 150 −40 to +150 0.98 10.0 500 2 100 40 500/500 30 500/1000 4.0 2.1
10.0 TO-220F2Pin FMX-G22S 150 −40 to +150 0.98 10.0 200 50 100 30 500/500 25 500/1000 4.0 2.1
15.0 TO-220F（Center-tap） FMX-22SL 100 −40 to +150 0.98 7.5 150 30 100 30 500/500 25 500/1000 4.0 2.1
20.0 TO-220F（Center-tap） FM2-2202 110 −40 to +150 0.98 10.0 200 0.4 150（Tj） 50 100/100 35 100/200 4.0 2.1
20.0 TO-220F（Center-tap） FMXA-2202S 100 −40 to +150 1.2 10.0 100 30 150 25 500/500 − − 4.0 2.1
20.0 TO-3PF（Center-tap ） FML-4202S 150 −40 to +150 0.98 10.0 10 0.4 150 40 500/500 30 500/1000 2.0 6.5
20.0 TO-3PF（Center-tap ） FMX-4202S 150 −40 to +150 0.98 10.0 200 50 150 30 500/500 25 500/1000 2.0 6.5
20.0 TO-3PF（Center-tap ） FMXA-4202S 100 −40 to +150 1.2 10.0 100 30 150（Tj） 25 500/500 − − 2.0 6.5
5.0 TO-220F（Center-tap） FML-13S 40 −40 to +150 1.3 2.5 50 0.1 100 50 100/100 35 100/200 4.0 2.1
5.0 TO-220F2Pin FML-G13S 70 −40 to +150 1.3 5.0 100 0.2 100 50 100/100 35 100/200 4.0 2.1
300 15.0 TO-220F（Center-tap） FMXA-2153S 75 −40 to +150 1.3 7.5 75 23 150（Tj） 25 500/500 − − 4.0 2.1
20.0 TO-220F（Center-tap） FMX-2203 100 −40 to +150 1.3 10.0 100 30 150 30 500/500 25 500/1000 4.0 2.1
20.0 TO-3PF（Center-tap ） FMX-4203S 100 −40 to +150 1.3 10.0 100 30 150 30 500/500 25 500/1000 2.0 6.5
20.0 TO-220F（Center-tap） FMXA-2203S 100 −40 to +150 1.3 10.0 100 30 150 25 500/500 − − 4.0 2.1
20.0 TO-3PF（Center-tap ） FMXA-4203S 100 −40 to +150 1.3 10.0 100 30 150（Tj） 25 500/500 − − 2.0 6.5
Diodes 205

with heatsinks
0.7 φ 2.4/
Axial（ φ 0.6） AG01 15 −40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13
0.7 φ 2.7/
Axial（ φ 0.6） EG01 15 −40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2
0.8 φ 2.7/
Axial（ φ 0.78） EG 1 15 −40 to +150 1.8 0.8 50 0.3 100 100 100/100 50 100/200 17 0.3
1.0 φ 2.4/
Axial（ φ 0.6） AL01 20 −40 to +150 1.4 1.0 10 0.5 150（Tj） 50 100/100 35 100/200 22 0.13
1.2 φ 4.0/
Axial（ φ 0.78） RG 10 50 −40 to +150 1.8 1.5 500 2.5 100 100 100/100 50 100/200 15 0.4
1.2 φ 4.0/
Axial（ φ 0.98） RG 2 50 −40 to +150 1.8 1.5 500 2.5 100 100 100/100 50 100/200 12 0.6
1.5 φ 2.7/
Axial（ φ 0.78） EL 1 20 −40 to +150 1.3 1.5 10 0.05 100 100 100/100 50 100/200 17 0.3
2.0 φ 4.0/
Axial（ φ 0.98） RL 2 40 −40 to +150 1.3 2.0 10 0.1 150（Tj） 50 100/100 35 100/200 12 0.6
φ 6.5/
1.0（3.0） Axial（ φ 1.4） RG4S 80 −40 to +150 1.8 3.0 500 2.5 100 100 100/100 50 100/200 8 1.2
3.5 φ 5.2/
Axial（ φ 1.2） RL 3 80 −40 to +150 1.3 3.5 100 0.2 150（Tj） 50 100/100 35 100/200 10 1.0
5.0 TO-220F2Pin FMXA-1054S 50 −40 to +150 1.5 5.0 50 15 150 20 500/500 − − 4.0 2.1
400 5.0 TO-220F（Center-tap） FMG-14S, R 35 −40 to +150 2.0 2.5 500 1.5 100 100 100/100 50 100/200 4.0 2.1
5.0 TO-220F2Pin FMX-G14S 70 −40 to +150 1.3 5.0 50 15 150 30 100/100 25 100/200 4.0 2.1
5.0 TO-220F2Pin FML-G14S 70 −40 to +150 1.3 5.0 100 0.2 100 50 100/100 35 100/200 4.0 2.1
5.0 TO-220F2Pin FMN-G14S 70 −40 to +150 1.0 5.0 50 10 150（Tj） 100 100/100 50 100/200 4.0 2.1
8.0 TO-220F（Center-tap） FMG-24S, R 65 −40 to +150 2.0 5.0 500 2.5 100 100 100/100 50 100/200 4.0 2.1
10.0 TO-220F2Pin FMXA-1104S 100 −40 to +150 1.5 10.0 100 30 150（Tj） 25 500/500 − − 4.0 2.1
16.0 TO-220F（Center-tap） FMXJ-2164S 100 −40 to +150 1.4 8.0 100 20 150（Tj） 18 500/500 − − 4.0 2.1
20.0 TO-3PF（Center-tap） FML-4204S 100 −40 to +150 1.3 10.0 50 0.4 150 50 500/500 35 500/1000 2.0 6.5
20.0 TO-3PF（Center-tap） FMXA-4204S* 100 −40 to +150 1.5 10 100 30 150（Tj） 25 500/500 − − 2.0 6.5
20.0 TO-3PF（Center-tap） FMD-4204S 100 −40 to +150 1.4 10 20 0.2 150（Tj） 50 500/500 25 500/1000 2.0 6.5
1.0 φ 4.0/
Axial（ φ 0.78） RD1105* 20 −40 to +150 1.4 1.0 10 0.1 150（Tj） 40 100/100 30 100/200 12.0 0.4
500
3.0 φ 5.2/
Axial（ φ 1.2） RD3305 50 −40 to +150 1.4 3.0 15 0.15 150（Tj） 50 100/100 35 100/200 10.0 1.0
0.5 φ 2.7/
Axial（ φ 0.6） EG01A 10 −40 to +150 2.0 0.5 100 0.5 100 100 100/100 50 100/200 20 0.2
0.5 φ 2.4/
Axial（ φ 0.6） AG01A 15 −40 to +150 1.8 0.5 100 0.5 100 100 100/100 50 100/200 22 0.13
0.6 φ 2.7/
Axial（ φ 0.78） EG 1A 10 −40 to +150 2.0 0.6 100 0.5 100 100 100/100 50 100/200 17 0.3
1.0 φ 4.0/
Axial（ φ 0.78） RG 10A 50 −40 to +150 2.0 1.0 500 2.5 100 100 100/100 50 100/200 15 0.4
1.0 φ 4.0/
Axial（ φ 0.98） RG 2A 50 −40 to +150 2.0 1.0 500 2.5 100 100 100/100 50 100/200 12 0.6
1.2 φ 4.0/
Axial（ φ 0.98） RD 2A 30 −40 to +150 1.55 1.2 50 0.1 150（Tj） 50 100/100 35 100/200 12 0.6
2.0 φ 5.2/
Axial（ φ 1.2） RL 3A 60 −40 to +150 1.7 3.0 50 0.2 150（Tj） 50 100/100 35 100/200 10 1.0
φ 6.5/
1.0（2.0） Axial（ φ 1.4） RG 4AS 50 −40 to +150 2.0 2.0 500 2.5 100 100 100/100 50 100/200 8 1.2
3.0 TO-220F（Two elements） FMC-26U 50 −40 to +150 2.0 3.0 500 3 150（Tj） 70 500/500 35 500/1000 4.0 2.1
3.0 φ 6.5/
Axial（ φ 1.4） RL 4A 80 −40 to +150 1.5 3.0 50 0.1 150（Tj） 50 500/500 35 500/1000 8 1.2
3.0 φ 6.5/
Axial（ φ 1.4） RN4A 50 −40 to +150 1.3 3.0 50 5 150（Tj） 100 100/100 50 100/200 8.0 1.2
4.0 TO-220F2Pin FMG-G26S 50 −40 to +150 2.5 4.0 500 3 100 100 100/100 50 100/200 4.0 2.1
5.0 TO-220F2Pin FMX-G16S 50 −40 to +150 1.5 5.0 50 15 150 30 100/100 25 100/200 4.0 2.1
5.0 TO-220F2Pin FML-G16S 50 −40 to +150 1.5 5.0 100 0.5 100 50 500/500 35 500/1000 4.0 2.1
5.0 TO-220F2Pin FMN-G16S 50 −40 to +150 1.2 5.0 50 10 150（Tj） 100 100/100 50 100/200 4.0 2.1
5.0 TO-220F2Pin FMN-1056S 60 −40 to +150 1.3 5.0 50 5.0 150 100 100/100 50 100/200 4.0 2.1
600
5.0 TO-220F2Pin FMD-1056S 90 −40 to +150 1.7 5.0 10 0.1 150 50 500/500 35 500/1000 4.0 2.1
6.0 TO-220F（Center-tap） FMG-26S, R 50 −40 to +150 2.2 3.0 500 3 100 100 100/100 50 100/200 4.0 2.1
8.0 TO-220F2Pin FMXK-1086S 100 −40 to +150 1.75 8 30 6.0 150 27 500/500 − − 4.0 2.1
10.0 TO-220F2Pin FMX-G26S 100 −40 to +150 1.5 10.0 100 20 150 30 100/100 25 100/200 4.0 2.1
10.0 TO-220F2Pin FMD-G26S 100 −40 to +150 1.7 10.0 100 0.3 100 50 500/500 30 500/1000 4.0 2.1
10.0 TO-220F2Pin FMXA-1106S 100 −40 to +150 1.98 10.0 100 30 150（Tj） 28 500/500 ーー 4.0 2.1
10.0 TO-220F2Pin FMNS-1106S 100 −40 to +150 1.3 10 100 10 150 100 100/100 50 100/200 4.0 2.1
10.0 TO-220F2Pin FMN-1106S 150 −40 to +150 1.3 10 100 10 150 100 100/100 50 100/200 4.0 2.1
10.0 TO-220F2Pin FMD-1106S 180 −40 to +150 1.7 10 20 0.2 150 50 500/500 35 500/1000 4.0 2.1
10.0 TO-220F2Pin FMXK-1106S 100 −40 to +150 1.75 10 100 10 150 27 500/500 ーー 4.0 2.1
20.0 TO-220F（Center-tap） FMN-2206S 150 −40 to +150 1.3 10 100 10 150 100 100/100 50 100/200 4.0 2.1
20.0 TO-220F（Center-tap） FMXK-2206S 100 −40 to +150 1.75 10 100 10 150 27 500/500 ーー 4.0 2.1
20.0 TO-3PF（Center-tap） FMD-4206S 100 −40 to +150 1.7 10.0 100 0.3 150 50 500/500 30 500/1000 2.0 6.5
20.0 TO-3PF（Center-tap） FMX-4206S* 100 −40 to +150 1.5 10 100 20 150（Tj） 30 500/500 25 500/1000 2.0 6.5
20.0 TO-3PF（Center-tap） FMXA-4206S* 100 −40 to +150 1.98 10 100 30 150（Tj） 28 500/500 ーー 2.0 6.5
20.0 TO-3PF（Center-tap） FMN-4206S 150 −40 to +150 1.3 10 100 10 150（Tj） 100 100/100 50 100/200 2.0 6.5
*Under development
206 Diodes

with heatsinks
0.5 φ 2.4/
Axial（ φ 0.6） AB01B 10 −40 to +150 2.0 0.5 10 0.2 150（Tj） 200 100/100 80 100/200 22 0.13
3.0 TO-220F（Two elements） FMC-28U 50 −40 to +150 3.0 3.0 100 0.5 150（Tj） 70 500/500 35 500/1000 4.0 2.1
800
3.0 TO-220F2Pin FMC-G28S 50 −40 to +150 3.0 3.0 100 1 150（Tj） 70 500/500 35 500/1000 4.0 2.1
5.0 TO-220F2Pin FMC-G28SL 60 −40 to +150 3.0 5.0 200 2 150（Tj） 70 500/500 35 500/1000 4.0 2.1
0.2 φ 2.4/
Axial（ φ 0.6） AP01C 5 −40 to +150 4.0 0.2 100 0.5 100 200 100/100 80 100/200 22 0.13
0.2 φ 2.7/
Axial（ φ 0.6） EP01C 5 −40 to +150 4.0 0.2 5 0.05 100 200 100/100 80 100/200 20 0.2
0.4 φ 4.0/
Axial（ φ 0.78） RU 1P 10 −40 to +150 4.0 0.4 5 0.05 100 100 100/100 50 100/200 15 0.4
1000 0.5 φ 2.7/
Axial（ φ 0.6） EG01C 10 −40 to +150 3.3 0.5 50 0.5 100 100 100/100 50 100/200 20 0.2
0.7 φ 4.0/
Axial（ φ 0.78） RG 1C 10 −40 to +150 3.3 0.7 20 0.25 100 100 100/100 50 100/200 15 0.4
φ 6.5/
1.0（2.0） Axial（ φ 1.4） RG 4C 60 −40 to +150 3.0 2.0 500 2.5 100 100 500/500 50 500/1000 8 1.2
4.0 TO-220F2Pin FMG-G2CS 30 −40 to +150 4.0 4.0 50 0.3 100 100 500/500 50 500/1000 4.0 2.1
1200 3.0 TO-220F2Pin（Two elements） FMC-26UA 50 −40 to +150 4.0 3.0 500 3 150（Tj） 70 500/500 35 500/1000 4.0 2.1
1600 3.0 TO-220F2Pin（Two elements） FMC-28UA 50 −40 to +150 6.0 3.0 100 0.5 150（Tj） 70 500/500 35 500/1000 4.0 2.1
2000 0.1 φ 4.0/
Axial（ φ 0.78） RP 1H 5 −40 to +150 7.0 0.1 2 0.01 100 100 10/20 50 10/20 15 0.4
Diodes 207
4-4 Schottky Barrier Diodes
Standard
●Surface-Mount
IFSM IR IR(H)
VRM IF (AV) (A) Tj Tstg VF IF (mA) (mA) Ta Rth(j-l) Mass
(V) (A) Package Part Number 50Hz (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
Single Half Sine Wave max max max (°C/W)
1.0 Surface-Mount (SJP) SJPB-D4 30 -40 to +150 0.55 1.0 0.1 35 150 20 0.072
2.0 Surface-Mount (SJP) SJPB-H4 50 -40 to +150 0.55 2.0 0.2 70 150 20 0.072
3.0 Surface-Mount (SJP) SJPB-L4 60 -40 to +150 0.55 3.0 0.3 100 150 20 0.072
40
3.0 Surface-Mount (D pack) SPB-G34S 50 -40 to +150 0.55 3.0 3.5 100 150 5 0.29
5.0 Surface-Mount (D pack) SPB-G54S 60 -40 to +150 0.55 5.0 5 175 150 5 0.29
6.0 Surface-Mount (D pack)Center-tap SPB-64S 50 -40 to +150 0.55 3.0 3.5 100 150 5 0.29
1.5 Surface-Mount (SJP) SJPW-F6 25 -40 to +150 0.70 1.5 1.0 70 150 20 0.072
60 2.0 Surface-Mount (SJP) SJPB-H6 40 -40 to +150 0.69 2.0 0.2 55 150 20 0.072
3.0 Surface-Mount (SJP) SJPB-L6 50 -40 to +150 0.70 3.0 0.3 70 150 20 0.072
5.0 Surface-Mount (D pack) SPB-G56S 60 -40 to +150 0.70 5.0 3 125 150 5 0.29
90
2.0 Surface-Mount (SJP) SJPB-H9 40 -40 to +150 0.85 2.0 0.2 55 150 20 0.072
100 20 Surface-Mount (TO220S)Center-tap MPE-220A 120 -40 to +150 0.85 10.0 1 100 150 2.5 1.04
●Thru-Hole
IFSM IR IR(H)
VRM IF (AV) Package (A) Tj Tstg VF IF (mA) (mA) Ta Rth(j-l) Mass
(V) (A) Axial Part Number 50Hz (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
(Body Diameter/Lead Diameter) Single Half Sine Wave max max max (°C/W)
1.0 Axial(φ 2.4/φ 0.6) AK 04 25 -40 to +150 0.55 1.0 1 35 150 22 0.13
1.0 Axial(φ 2.7/φ 0.6) EK 04 40 -40 to +150 0.55 1.0 5 35 150 20 0.3
1.5 Axial(φ 2.7/φ 0.78) EK 14 40 -40 to +150 0.55 2.0 5 70 150 17 0.3
1.7 Axial(φ 4.0/φ 0.78) RK 14 60 -40 to +150 0.55 2.0 5 70 150 15 0.45
2.5 Axial(φ 4.0/φ 0.98) RK 34 50 -40 to +150 0.55 2.5 5 100 150 12 0.6
3.0 TO-220F2Pin FMB-G14 60 -40 to +150 0.55 3.0 5 100 150 4 2.1
3.0 Axial(φ 6.5/φ 1.4) RK 44 80 -40 to +150 0.55 3.0 5 100 150 8 1.2
4.0 TO-220F(Center-tap) FMB-24 50 -40 to +150 0.55 2.0 5 250 150 4 2.1
5.0 Axial(φ 6.5/φ 1.4) RW 54 120 -40 to +150 0.55 5.0 1 150 150(Tj) 8 1.2
40 5.0 TO-220F2Pin FMB-G14L 60 -40 to +150 0.55 5.0 5 175 150 4 2.1
6.0 TO-220F(Center-tap) FMB-24M 60 -40 to +150 0.55 3.0 5 100 150 4 2.1
10 TO-220F(Center-tap) FMB-24L 60 -40 to +150 0.55 5.0 5 175 150 4 2.1
10 TO-220F(Center-tap) FMW-24L 100 -40 to +150 0.55 5.0 5 175 150 4 2.1
10 TO-220F2Pin FMB-G24H 150 -40 to +150 0.55 10.0 10 350 150 4 2.1
15 TO-220F(Center-tap) FMB-24H 100 -40 to +150 0.55 7.5 7.5 250 150 4 2.1
15 TO-220F(Center-tap) FMW-24H 120 -40 to +150 0.55 7.5 7.5 250 150 4 2.1
20 TO-220F(Center-tap) FMB-2204 150 -40 to +150 0.55 10 10 350 150 4 2.1
20 TO-220F(Center-tap) FMW-2204 150 -40 to +150 0.55 10.0 10 350 150 4 2.1
208 Diodes
IFSM IR IR(H)
0.7 Axial(φ 2.4/ φ 0.6) AK 06 10 -40 to +150 0.62 0.7 1 30 150 22 0.13
0.7 Axial(φ 2.7/ φ 0.6) EK 06 10 -40 to +150 0.62 0.7 1 30 150 20 0.3
1.5 Axial(φ 2.7/ φ 0.78) EK 16 25 -40 to +150 0.62 1.5 1 55 150 17 0.3
1.5 Axial(φ 4.0/ φ 0.78) RK 16 25 -40 to +150 0.62 1.5 1 55 150 15 0.45
2.0 Axial(φ 4.0/ φ 0.98) RK 36 40 -40 to +150 0.62 2.0 2 70 150 12 0.6
3.5 Axial( φ 6.5/ φ 1.4) RK 46 70 -40 to +150 0.62 3.5 3 125 150 8 1.2
60 4.0 TO-220F(Center-tap) FMB-26 40 -40 to +150 0.62 2.0 1 55 150 4 2.1
6.0 TO-220F2Pin FMB-G16L 50 -40 to +150 0.62 5.0 5 175 150 4 2.1
30 TO-3PF(Center-tap) FMW-4306 150 -40 to +150 0.7 15 3 350 150 2 6.5
0.7 Axial(φ 2.4/ φ 0.6) AK 09 10 -40 to +150 0.81 0.7 1 30 150 22 0.13
0.7 Axial(φ 2.7/ φ 0.6) EK 09 10 -40 to +150 0.81 0.7 1 30 150 20 0.3
1.5 Axial(φ 2.7/ φ 0.78) EK 19 40 -40 to +150 0.81 1.5 2 55 150 17 0.3
1.5 Axial(φ 4.0/ φ0.78) RK 19 40 -40 to +150 0.81 1.5 2 55 150 15 0.45
90 2.0 Axial(φ 4.0/ φ 0.98) RK 39 50 -40 to +150 0.81 2.0 3 70 150 12 0.6
3.5 Axial(φ 6.5/ φ 1.4) RK 49 60 -40 to +150 0.81 3.5 5 125 150 8 1.2
4.0 TO-220F(Center-tap) FMB-29 50 -40 to +150 0.81 2.0 3 70 150 4 2.1
4.0 TO-220F2Pin FMB-G19L 60 -40 to +150 0.81 4.0 5 125 150 4 2.1
8.0 TO-220F(Center-tap) FMB-29L 60 -40 to +150 0.81 4.0 5 125 150 4 2.1
Low VF “A Series”
●Surface-Mount
IFSM IR IR(H)
(V) (A) Package Part Number (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
50Hz
1.0 Surface-Mount (SJP) SJPA-D3 30 -40 to +125 0.36 1.0 1.5 70 100 20 0.072
30 2.0 Surface-Mount (SJP) SJPA-H3* 40 -40 to +125 0.36 2.0 3.0 140 100 20 0.072
3.0 Surface-Mount (SJP) SJPA-L3 50 -40 to +125 0.36 3.0 4.5 210 100 20 0.072
*Under development
●Thru-Hole
IFSM IR IR(H)
30 2.0 Axial(φ4.0/φ0.78) RA 13 40 -40 to +125 0.36 2.0 3.0 140 100 15 0.45
Diodes 209
Low IR “E Series”
●Surface-Mount
IFSM IR IR(H)
30 2.0 Surface-Mount (SJP) SJPE-H3* 40 -40 to +150 0.55 2.0 0.2 70 150 20 0.072
40 2.0 Surface-Mount (SJP) SJPE-H4 40 -40 to +150 0.6 2.0 0.2 70 150 20 0.072
*Under development
●Thru-Hole
IFSM IR IR(H)
(V) (A) Package Part Number 50Hz (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
40 15 TO-220F(Center-tap) FME-24H 100 -40 to +150 0.6 7.5 0.75 75 150 4 2.1
60 10 TO-220F(Center-tap) FME-2106 60 -40 to +150 0.72 5.0 1 35 150 4 2.1
10 TO-220F(Center-tap) FMEN-210A 100 -40 to +150 0.85 5.0 0.1 50 150(Tj) 4 2.1
15 TO-220F(Center-tap) FMEN-215A* 100 -40 to +150 0.85 7.5 0.15 75 150(Tj) 4 2.1
20 TO-220F(Center-tap) FMEN-220A 120 -40 to +150 0.85 10 0.2 100 150(Tj) 4 2.1
100 20 TO-3PF(Center-tap) FMEN-420A 120 -40 to +150 0.85 10 0.2 100 150(Tj) 2 6.5
30 TO-220F(Center-tap) FMEN-230A 150 -40 to +150 0.85 15 0.3 150 150(Tj) 4 2.1
30 TO-262 MPEN-230AF 150 -40 to +150 0.90 15 0.25 125 150(Tj) 1.5 1.55
30 TO-3PF(Center-tap) FMEN-430A 150 -40 to +150 0.85 15 0.3 150 150 2 6.5
10 TO-220F(Center-tap) FMEN-210B 100 -40 to +150 0.92 5 0.1 25 150 4 2.1
150
20 TO-3PF(Center-tap) FMEN-420B 120 -40 to +150 0.92 10 0.2 50 150(Tj) 2 6.5
*Under development
Low VF/Low IR Balance “J Series”

●Surface-Mount
IFSM IR IR(H)
(V) (A) Package Part Number (°C) (°C) (V) (A) VR=VRM VR=VRM (°C) Rth(j-c) (g)
50Hz
1.0 Surface-Mount (SJP) SJPJ-D3 30 -40 to +150 0.45 1.0 0.1 35 150 20 0.072
30 2.0 Surface-Mount (SJP) SJPJ-H3* 40 -40 to +150 0.45 2.0 0.2 70 150 20 0.072
3.0 Surface-Mount (SJP) SJPJ-L3 50 -40 to +150 0.45 3.0 0.3 100 150 20 0.072
*Under development
●Thru-Hole
IFSM IR IR(H)
3.0 Axial(φ6.5/φ1.4) RJ 43 50 -40 to +150 0.45 3.0 3 100 150 8 1.2

30 10 TO-220F(Center-tap) FMJ-23L 100 -40 to +150 0.45 5.0 5 175 150 4 2.1
30 TO-220F(Center-tap) FMJ-2303 150 -40 to +150 0.48 15.0 15 500 150 4 2.1
210 Diodes
4-5 High Voltage Rectifier Diodes
IFSM IR IR(H) trrq

VRM Part IF(AV) (A) Tc Tstg VF IF (µA) (µA) Ta (µs) IF/IRP Mass Package
Category (kV) Nubmer (mA) 50Hz (°C) (°C) (V) (mA) VR=VRM VR=VRM (°C) (mA) (g) Type No.
Single Half Sine Wave max max max Ta=100°C
For high frequency 6 SHV-06EN 2.0 0.5 100 -40 to +120 24 10 1 3 100 0.15 0.20 10/10 0.17
1
multilayer FBT 8 SHV-08EN 2.0 0.5 100 -40 to +120 30 10 1 3 100 0.15 0.20 10/10 0.17
• The SHV series is being packaged in a highly compact case based on the premise of overmolding with epoxy or similar materials. Handling proce-
dures for prevention of discharge through creepage or environmental effects such as humidity must be used.
• Taping specifications for the SHV series differ from those for general diodes (refer to page 197).
• No. 1 High Voltage Rectifier Diodes
27min 3 27min
0.5
Diodes 211
4-6 Power Zener Diodes
P VZ PR VDC IZSM Tj Tstg IR

(W) 1mA (W)
Package Part Number
(V) (A) (°C) ( µ A) Mass(g)
(V) Conditions max
1 28±3 50 (5ms) Surface-Mount(SJP) SJPZ-K28 20 – 5mA rectangular wave -55 to +150 10 0.07
1 18.8 to 21.2 Surface-Mount(SJP) SJPZ-E20 15 – – -55 to +150 10 0.07
95 (500 µs)
1 31.0 to 35.0 Surface-Mount(SJP) SJPZ-E33 25 – – -55 to +150 10 0.07
2 16.8 to 19.1 Surface-Mount(SJP) SJPZ-N18 13 – – -55 to +150 10 0.07
500 (500 µs)
5 24 to 30 – Surface-Mount(SZ-10) SZ-10N27 22 70 Fig.1 -55 to +175 10 2.55
5 36 to 40 – Surface-Mount(SZ-10) SZ-10N40 22 40 Fig.1 -55 to +175 10 2.55
6 24 to 30 – Surface-Mount(SZ-10) SZ-10NN27 22 90 Fig.1 -55 to +175 10 2.55
6 36 to 40 – Surface-Mount(SZ-10) SZ-10NN40 22 55 Fig.1 -55 to +175 10 2.55
Figure1
IZSM Condition
IRSM
IRSM
2
0 10ms Time
212 Diodes
4-7 Silicon Varistors
●Symmetrical
ITSM
VF IF IF VF (A) Tj Tstg Rth(j-l) Mass
(V) (mA) Part Number (µA) (V) 50Hz (°C) (°C) (°C/W) (g) Package
max Single Half Sine Wave
1.5max 1000 VR-60SS 20 0.2 15 -40 to +100 20 0.3 Axial(φ2.7/φ0.6)
2.3±0.25 1
2.75±0.25 10 VR-61SS 7.5 -40 to +100 20 0.3 Axial(φ2.7/φ0.6)
3.1±0.25 70
2.0max 100 SV-3SS 50 0.6 -40 to +100 20 0.3 Axial(φ2.7/φ0.6)
1.8±0.2 1
2.15±0.2 10 SV-4SS 50 0.9 -40 to +100 20 0.3 Axial(φ2.7/φ0.6)
2.4±0.25 30
Part Number VR-60SS VR-61SS SV-3SS SV-4SS
Orange Orange White White

Display Color
Red
Internal Connection
Diodes 213
• No. 1 Surface-Mount (SJP) • No. 2 Surface-Mount (D pack) • No. 3 Surface-Mount (D pack) Center-tap
6.5 ±0.4 2.3±0.4

4.5±0.2 5.4
6.5 ±0.4 2.3±0.4
0.16
0.55 ±0.1 5.4
4.1
0.16
5.4 ±0.4 5.4 ±0.4
0.55 ±0.1 4.1
1.7 ±0.5
1.7 ±0.5
1.37
2.9
1.37
2.9
2.6±0.2
5.0
5.0
a.
0.7
a.
0.7
5.5 ±0.4
5.5 ±0.4
b. b.
1.2max
1.2max
c. 4.9 4.9
c.
2.5 ±0.4
2.5 ±0.4
0 to 0.25 0 to 0.25
0.05–0.05

2.15±0.2
+0.1
b: Polarity b: Polarity
1.15 ±0.1 1.15 ±0.1
0.8±0.1 0.8 ±0.1 0.8±0.1 0.8 ±0.1 c: Lot No.
0.5 ±0.2
c: Lot No.
0.5 ±0.2
2.29 ±0.5 2.29 ±0.5 2.29 ±0.5 2.29 ±0.5
1 2(Common to heatsink) 3
0.55 ±0.1 0.55 ±0.1 1 2(Common to heatsink) 3
1.3±0.4 1.3±0.4 1.5±0.2 NC Cathode Anode
1.5 max
+0.4 1.5 max Anode Cathode(Common) Anode
5.0 –0.1
1 2 3 1 2 3
• No. 4 Surface-Mount (TO263) • No. 5 Surface-Mount (TO220S) • No. 6 Surface-Mount (TO220S)

MPL-102S, MP2-202S, MPL-1036
4.44±0.2 10.2±0.3 4.44±0.2
4.5±0.2
(1.4)
9.9±0.2 1.3±0.2
(1.4)
(5)
1.3±0.2
1.3±0.1
(0.4) (15°) 1.2±0.2
(3°)
10.2±0.3
(0.45)
+0.3
10.0 –0.5
10.5 +0.3
–0.5
(φ 1.5 Dp0.2)
8.6±0.3
(4.6)
9.1±0.3
(3°) b
+0.2
9.2±0.2 0.1±0.15 0.1 –0.1
(1.5)
(1.5)
15.3±0.3
c
1 2 3
2.59±0.2
±0.2
10.0±0.2
1.27
(1.2)
1.4±0.2 2.4±0.2 +0.2

2.0±0.1
(R0.3) 0.86 +0.2 0.86 –0.1 0.4±0.1
3.0 – 0.5
+0.3
–0.1
4.9±0.2 A 0.4±0.1
1.34 +0.2
1.27±0.1
(0.75) 2.54±0.3
–0.1
1.2±0.2
2.54±0.1 2.54±0.1
a: Part Number
0.8±0.1
0.5±0.1 2.54±0.5 2.54±0.5 b: Polarity
2.54TYP 2.54TYP
q w e c: Lot No.
*w is common to the frame.
q w e
• No. 7 Surface-Mount (TO220S) Center-tap • No. 8 Surface-Mount (SZ-10) • No. 9 Axial (φ2.4/φ0.6)
10.2±0.3 4.44±0.2
1.3±0.2
(1.4)
10.0±0.3 8.5±0.5
10±0.3
φ 0.57 ±0.02
5.0±0.3 5±0.3
(4.6) 2±0.3
a
+0.3
10.0 –0.5
Cathode band
8.6±0.3
2.9 ±0.1
b
+0.2
(9.75)
10±0.3
9.6±0.5
0.1 –0.1
(1.5)
(1.5)
13.5±0.3
c
15.5±0.5
50.0 ±1.0
2.59±0.2
1.27±0.2
3.9±0.5
+0.2 5.0±0.3 φ 2.4 ±0.1

0.86 –0.1 0.4±0.1
+0.3
3.0 – 0.5
1.2±0.2
(0.4)
1.1±0.5
2.0±0.5
(2.5) 2.7±0.3
a: Part Number 7.2±0.5 3±0.5
2.54±0.5 2.54±0.5 b: Polarity
q w e c: Lot No.
q w e
• No. 10 Axial (φ2.7/φ0.6) • No. 11 Axial (φ2.7/φ0.6) • No. 12 Axial (φ 2.7/φ 0.78)
Silicon Varistors (Symmetrical)
φ 0.6 ±0.05 φ 0.78 ±0.05
φ 0.6
Cathode band Cathode band

±0.7
5.0 ±0.2
62.3 ±0.7
5.0 ±0.2
62.3 ±1.0
5.0 ±0.2
62.3
φ 2.7±0.2
φ 2.7 ±0.2 φ 2.7 ±0.2
214 Diodes
• No. 13 Axial (φ 4.0/φ 0.78) • No. 14 Axial (φ 4.0/φ 0.98) • No. 15 Axial (φ 5.2/φ 1.2)
φ 0.78 ±0.05 φ 0.98 ±0.05 φ 1.2 ±0.05
Cathode band Cathode band

Cathode band
62.5 ±0.7
7.2 ±0.2
62.5 ±0.7
7.2 ±0.2
62.5 ±0.7
9.1 ±0.2
φ 5.2 ±0.2
φ 4.0 ±0.2 φ 4.0 ±0.2
• No. 16 Axial (φ 6.5/φ 1.4) • No. 17 TO-220F (Two Elements) • No. 18 TO-220F (Center-tap)
10.0±0.2 4.2 0.2
C 10.0±0.2 4.2±0.2
2.8±0.2 0.5 C
φ 1.4 ±0.1 2.8±0.2 0.5
4.0±0.2
4.0±0.2
8.4±0.2
8.4±0.2
Cathode band
16.9±0.3
16.9±0.3
φ 3.3 ±0.2 φ 3.3 ±0.2
a
0.8±0.2
0.8±0.2
b b
50 ±0.1
8.0 ±0.2
c c
3.9
±0.2
3.9
±0.2
13.0min
13.0min
1.35±0.15 1.35±0.15
φ 6.5 ±0.2 1.35±0.15 1.35±0.15
0.85+0.2
−0.1 0.85+0.2
−0.1
0.45+0.2
−0.1 2.4±0.2 0.45+0.2 2.4±0.2
2.54 2.54 −0.1
2.54 2.54
S type R type U type S type R type

b: Polarity b: Polarity
c: Lot No. c: Lot No.
• No. 19 TO-220F2Pin • No. 20 TO-220F2Pin (Two Elements) • No. 21 TO-3PF

10.0 4.2 10.0 4.2 5.5±0.2
φ 3.3 2.8 3.3 2.8 15.6±0.2
3.45±0.2
±0.2
0.8
4.0
4.0
9.5 ±0.2
5.5
8.4
8.4
23.0 ±0.3
16.9
16.9
2.2 2.2 φ 3.3±0.2

2.6 2.6 a
0.8
0.8
b
1.6
3.0
3.9
3.9
3.3
(13.5)
(13.5)
1.75±0.15 0.8
1.35 1.35
0.85 0.85 2.15±0.15
1.05+0.2
-0.1
5.08 0.45 5.08 0.45

5.45±0.1 5.45±0.1 0.65+0.2
-0.1 3.35±0.2
q w q w
1.5 4.4 1.5
a: Part Number
b: Lot No.
• No. 22 TO-3PF2Pin • No. 23 RBV-60

5.5±0.2
0.8 ±0.2
±0.3
15.6 30±0.2 4.6±0.2
3.45±0.2
15±0.2 3.6±0.2
C3
3.2±0.2
9.5±0.2
5.5
23.0±0.2
3.8±0.2
20±0.2
φ 3.3 ±0.2
a
11±0.2
3.0
(4.5)
b
1.6
c 2.7±0.1
5
3.3
1.75±0.15 0.8
(17.5)
+0.2
2 –0.1
1.6
+0.2
1 –0.1
1.05+0.2
−0.1
+0.2
5.45±0.1 5.45±0.1 0.65+0.2
−0.1 3.35±0.2 10±0.1 7.5 ±0.1 7.5 ±0.1 2.5±0.1 0.7 –0.1
a: Part Number
b: Polarity
c: Lot No.
Diodes 215
Part Number Index
Part No. Category Description Page Part No. Category Description Page
2SA1186 Transistor Audio and General Purpose (LAPT) 156 2SC4024 Transistor DC-DC Converter and General Purpose 158
2SA1216 Transistor Audio and General Purpose (LAPT) 156 2SC4138 Transistor SMPS for 100VAC system and General Purpose 158
2SA1386A Transistor Audio and General Purpose (LAPT) 156 2SC4304 Transistor SMPS for 200VAC system and General Purpose 158
2SA1488 Transistor General Purpose 156 2SC4381 Transistor Audio Driver and General Purpose 158
2SA1488A Transistor General Purpose 156 2SC4382 Transistor Audio Driver and General Purpose 158
2SA1492 Transistor Audio and General Purpose (Single Emitter) 156 2SC4388 Transistor Audio and General Purpose (Single Emitter) 158
2SA1493 Transistor Audio and General Purpose (Single Emitter) 156 2SC4445 Transistor SMPS for 200VAC system and General Purpose 158
2SA1567 Transistor General Purpose (Low VCE (sat)) 156 2SC4467 Transistor Audio and General Purpose (Single Emitter) 158
2SA1568 Transistor General Purpose (Low VCE (sat)) 156 2SC4468 Transistor Audio and General Purpose (Single Emitter) 158
2SA1667 Transistor Audio Driver and General Purpose 156 2SC4495 Transistor Audio Temperature Compensation and General Purpose 158
2SA1668 Transistor Audio Driver and General Purpose 156 2SC4511 Transistor Audio and General Purpose (Single Emitter) 158
2SA1693 Transistor Audio and General Purpose (Single Emitter) 156 2SC4518A Transistor SMPS for 200VAC system and General Purpose 158
2SA1725 Transistor Audio and General Purpose (Single Emitter) 156 2SC4883 Transistor Audio Driver and General Purpose 158
2SA1746 Transistor General Purpose 156 2SC4883A Transistor Audio Driver and General Purpose 158
2SA1859 Transistor Audio Driver and General Purpose 156 2SC4886 Transistor Audio and General Purpose (LAPT) 158
2SA1859A Transistor Audio Driver and General Purpose 156 2SC5071 Transistor SMPS for 100VAC system and General Purpose 158
2SA1860 Transistor Audio and General Purpose (LAPT) 156 2SC5099 Transistor Audio and General Purpose (Single Emitter) 158
2SA2151A Transistor Audio and General Purpose (Single Emitter) 156 2SC6011 Transistor Audio and General Purpose (Single Emitter) 158
2SA2223 Transistor Audio and General Purpose (Single Emitter) 156 2SC6011A Transistor Audio and General Purpose (Single Emitter) 158
2SB1257 Transistor General Purpose (Darlington) 156 2SC6145 Transistor Audio and General Purpose (Single Emitter) 158
2SB1258 Transistor General Purpose (Darlington) 156 2SD1785 Transistor General Purpose (Darlington) 160
2SB1559 Transistor Audio and General Purpose (Darlington) 156 2SD2045 Transistor General Purpose (Darlington) 160
2SB1647 Transistor Audio and General Purpose (Darlington) 156 2SD2389 Transistor Audio and General Purpose (Darlington) 160
2SC2837 Transistor Audio and General Purpose (LAPT) 158 2SD2438 Transistor Audio and General Purpose (Darlington) 160
2SC3284 Transistor Audio and General Purpose (LAPT) 158 2SD2641 Transistor General Purpose (Darlington) 160
2SC3519 Transistor Audio and General Purpose (LAPT) 158 2SD2642 Transistor General Purpose (Darlington) 160
2SC3519A Transistor Audio and General Purpose (LAPT) 158 2SD2643 Transistor General Purpose (Darlington) 160
2SC3835 Transistor DC-DC Converter and General Purpose 158 2SK2420 Transistor MOS FET 164
2SC3851 Transistor General Purpose 158 2SK2701A Transistor MOS FET 164
2SC3851A Transistor General Purpose 158 2SK2778 Transistor MOS FET 164
2SC3852 Transistor General Purpose (High hFE, Low VCE (sat)) 158 2SK2779 Transistor MOS FET 164
2SC3852A Transistor General Purpose (High hFE, Low VCE (sat)) 158 2SK2803 Transistor MOS FET 164
2SC3856 Transistor Audio and General Purpose (Single Emitter) 158 2SK2848 Transistor MOS FET 164
2SC3927 Transistor SMPS for 200VAC system and General Purpose 158 2SK3004 Transistor MOS FET 164
216 Part Number Index

Part Number Index
2SK3199 Transistor MOS FET 164 EU02Z Diode Fast Recovery Diode (Axial) 203
2SK3710A Transistor MOS FET 164 EU 1 Diode Fast Recovery Diode (Axial) 203
2SK3711 Transistor MOS FET 164 EU 1Z Diode Fast Recovery Diode (Axial) 203
2SK3800 Transistor MOS FET 164 EU 2 Diode Fast Recovery Diode (Axial) 203
2SK3801 Transistor MOS FET 164 EU 2A Diode Fast Recovery Diode (Axial) 204
AB01B Diode Ultrafast Recovery Diode (Axial) 207 EU 2Z Diode Fast Recovery Diode (Axial) 203
AG01 Diode Ultrafast Recovery Diode (Axial) 206 FGM603 Transistor IGBT 168
AG01A Diode Ultrafast Recovery Diode (Axial) 206 FGT312 Transistor IGBT 168
AK 04 Diode Schottky Barrier Diode (Axial) 208 FGT313 Transistor IGBT 168
AL01 Diode Ultrafast Recovery Diode (Axial) 206 FKP202 Transistor MOS FET 164
AL01Z Diode Ultrafast Recovery Diode (Axial) 205 FKP250A Transistor MOS FET 164
AM01 Diode Rectifier Diode (Axial) 201 FKP252 Transistor MOS FET 164
AM01A Diode Rectifier Diode (Axial) 201 FKP253 Transistor MOS FET 164
AM01Z Diode Rectifier Diode (Axial) 201 FKP280A Transistor MOS FET 164
AP01C Diode Ultrafast Recovery Diode (Axial) 207 FKP300A Transistor MOS FET 164
AS01 Diode Ultrafast Recovery Diode (Axial) 203 FKP330C Transistor MOS FET 164
AS01A Diode Ultrafast Recovery Diode (Axial) 204 FKV460S Transistor MOS FET 164
AU01 Diode Fast Recovery Diode (Axial) 203 FKV550N Transistor MOS FET 164
AU01A Diode Fast Recovery Diode (Axial) 204 FKV550T Transistor MOS FET 164
AU01Z Diode Fast Recovery Diode (Axial) 203 FKV575 Transistor MOS FET 164
AU02 Diode Fast Recovery Diode (Axial) 203 FKV660S Transistor MOS FET 164
AU02A Diode Fast Recovery Diode (Axial) 204 FM2-2202 Diode Ultrafast Recovery Diode (Frame) 205
AU02Z Diode Fast Recovery Diode (Axial) 203 FMB-2204 Diode Schottky Barrier Diode (Frame) 208
EG01 Diode Ultrafast Recovery Diode (Axial) 206 FMB-2304 Diode Schottky Barrier Diode (Frame) 208
EG01A Diode Ultrafast Recovery Diode (Axial) 206 FMB-2306 Diode Schottky Barrier Diode (Frame) 209
EG01C Diode Ultrafast Recovery Diode (Axial) 207 FMB-24 Diode Schottky Barrier Diode (Frame) 208
EG 1 Diode Ultrafast Recovery Diode (Axial) 206 FMB-24H Diode Schottky Barrier Diode (Frame) 208
EG 1A Diode Ultrafast Recovery Diode (Axial) 206 FMB-24L Diode Schottky Barrier Diode (Frame) 208
EH 1 Diode Fast Recovery Diode (Axial) 203 FMB-24M Diode Schottky Barrier Diode (Frame) 208
EK 04 Diode Schottky Barrier Diode (Axial) 208 FMB-26 Diode Schottky Barrier Diode (Frame) 209
EK 06 Diode Schottky Barrier Diode (Axial) 209 FMB-29 Diode Schottky Barrier Diode (Frame) 209
EK 09 Diode Schottky Barrier Diode (Axial) 209 FMB-29L Diode Schottky Barrier Diode (Frame) 209
EK 14 Diode Schottky Barrier Diode (Axial) 208 FMB-G14 Diode Schottky Barrier Diode (F2Pin) 208
EK 16 Diode Schottky Barrier Diode (Axial) 209 FMB-G14L Diode Schottky Barrier Diode (F2Pin) 208
EK 19 Diode Schottky Barrier Diode (Axial) 209 FMB-G16L Diode Schottky Barrier Diode (F2Pin) 209
EKV550 Transistor MOS FET 164 FMB-G19L Diode Schottky Barrier Diode (F2Pin) 209
EL02Z Diode Ultrafast Recovery Diode (Axial) 205 FMB-G24H Diode Schottky Barrier Diode (F2Pin) 208
EL 1 Diode Ultrafast Recovery Diode (Axial) 206 FMC-26U Diode Ultrafast Recovery Diode (Frame) 206
EL 1Z Diode Ultrafast Recovery Diode (Axial) 205 FMC-26UA Diode Ultrafast Recovery Diode (F2Pin) 207
EM01 Diode Rectifier Diode (Axial) 201 FMC-28U Diode Ultrafast Recovery Diode (Frame) 207
EM01A Diode Rectifier Diode (Axial) 201 FMC-28UA Diode Ultrafast Recovery Diode (F2Pin) 207
EM01Z Diode Rectifier Diode (Axial) 201 FMC-G28S Diode Ultrafast Recovery Diode (F2Pin) 207
EM 1 Diode Rectifier Diode (Axial) 201 FMC-G28SL Diode Ultrafast Recovery Diode (F2Pin) 207
EM 1A Diode Rectifier Diode (Axial) 201 FMD-1056S Diode Ultrafast Recovery Diode (F2Pin) 206
EM 1B Diode Rectifier Diode (Axial) 201 FMD-1106S Diode Ultrafast Recovery Diode (F2Pin) 206
EM 1C Diode Rectifier Diode (Axial) 201 FMD-4204S Diode Ultrafast Recovery Diode (Frame) 206
EM 1Y Diode Rectifier Diode (Axial) 201 FMD-4206S Diode Ultrafast Recovery Diode (Frame) 206
EM 1Z Diode Rectifier Diode (Axial) 201 FMD-G26S Diode Ultrafast Recovery Diode (F2Pin) 206
EM 2 Diode Rectifier Diode (Axial) 201 FME-2106 Diode Schottky Barrier Diode (Frame) 210
EM 2A Diode Rectifier Diode (Axial) 201 FME-24H Diode Schottky Barrier Diode (Frame) 210
EM 2B Diode Rectifier Diode (Axial) 201 FMEN-210A Diode Schottky Barrier Diode (Frame) 210
EN 01Z Diode Ultrafast Recovery Diode (Axial) 205 FMEN-210B Diode Schottky Barrier Diode (Frame) 210
EP01C Diode Ultrafast Recovery Diode (Axial) 207 FMEN-215A Diode Schottky Barrier Diode (Frame) 210
ES01A Diode Fast Recovery Diode (Axial) 204 FMEN-220A Diode Schottky Barrier Diode (Frame) 210
ES01F Diode Fast Recovery Diode (Axial) 204 FMEN-220B Diode Schottky Barrier Diode (Frame) 210
ES 1 Diode Fast Recovery Diode (Axial) 203 FMEN-230A Diode Schottky Barrier Diode (Frame) 210
ES 1F Diode Fast Recovery Diode (Axial) 204 FMEN-230B Diode Schottky Barrier Diode (Frame) 210
ES 1Z Diode Fast Recovery Diode (Axial) 203 FMEN-420A Diode Schottky Barrier Diode (Frame) 210
EU01 Diode Fast Recovery Diode (Axial) 203 FMEN-420B Diode Schottky Barrier Diode (Frame) 210
EU01Z Diode Fast Recovery Diode (Axial) 203 FMEN-430A Diode Schottky Barrier Diode (Frame) 210
EU02 Diode Fast Recovery Diode (Axial) 203 FMG-14R Diode Ultrafast Recovery Diode (Frame) 206
EU02A Diode Fast Recovery Diode (Axial) 204 FMG-14S Diode Ultrafast Recovery Diode (Frame) 206
Part Number Index 217

Part Number Index
FMG-24R Diode Ultrafast Recovery Diode (Frame) 206 FMX-12S Diode Ultrafast Recovery Diode (Frame) 205
FMG-24S Diode Ultrafast Recovery Diode (Frame) 206 FMX-2203 Diode Ultrafast Recovery Diode (Frame) 205
FMG-26R Diode Ultrafast Recovery Diode (Frame) 206 FMX-22S Diode Ultrafast Recovery Diode (Frame) 205
FMG-26S Diode Ultrafast Recovery Diode (Frame) 206 FMX-22SL Diode Ultrafast Recovery Diode (Frame) 205
FMG-G26S Diode Ultrafast Recovery Diode (F2Pin) 206 FMX-23S Diode Ultrafast Recovery Diode (Frame) 205
FMG-G2CS Diode Ultrafast Recovery Diode (F2Pin) 207 FMX-4202S Diode Ultrafast Recovery Diode (Frame) 205
FMJ-2303 Diode Schottky Barrier Diode (Frame) 210 FMX-4203S Diode Ultrafast Recovery Diode (Frame) 205
FMJ-23L Diode Schottky Barrier Diode (Frame) 210 FMX-4206S Diode Ultrafast Recovery Diode (Frame) 206
FML-12S Diode Ultrafast Recovery Diode (Frame) 205 FMXA-1054S Diode Ultrafast Recovery Diode (F2Pin) 206
FML-22S Diode Ultrafast Recovery Diode (Frame) 205 FMXA-2102ST Diode Ultrafast Recovery Diode (Frame) 205
FML-23S Diode Ultrafast Recovery Diode (Frame) 205 FMXA-2153S Diode Ultrafast Recovery Diode (Frame) 205
FML-G12S Diode Ultrafast Recovery Diode (F2Pin) 205 FMXA-4203S Diode Ultrafast Recovery Diode (Frame) 205
FML-G16S Diode Ultrafast Recovery Diode (F2Pin) 206 FMX-G12S Diode Ultrafast Recovery Diode (F2Pin) 205
FML-G22S Diode Ultrafast Recovery Diode (F2Pin) 205 FMX-G14S Diode Ultrafast Recovery Diode (F2Pin) 206
FMM-22R Diode Rectifier Diode (Frame) 201 FMX-G16S Diode Ultrafast Recovery Diode (F2Pin) 206
FMM-22S Diode Rectifier Diode (Frame) 201 FMX-G22S Diode Ultrafast Recovery Diode (F2Pin) 205
FMM-24R Diode Rectifier Diode (Frame) 201 FMX-G26S Diode Ultrafast Recovery Diode (F2Pin) 206
FMM-24S Diode Rectifier Diode (Frame) 201 FMXJ-2164S Diode Ultrafast Recovery Diode (Frame) 206
FMM-26R Diode Rectifier Diode (Frame) 201 FMXK-1086S Diode Ultrafast Recovery Diode (F2Pin) 206
FMM-26S Diode Rectifier Diode (Frame) 201 FMXK-1106S Diode Ultrafast Recovery Diode (F2Pin) 206
FMN-1056S Diode Ultrafast Recovery Diode (F2Pin) 206 FMXK-2206S Diode Ultrafast Recovery Diode (Frame) 206
FMN-1106S Diode Ultrafast Recovery Diode (F2Pin) 206 FMY-1036S Diode Fast Recovery Diode (F2Pin) 204
FMN-2206S Diode Ultrafast Recovery Diode (Frame) 206 FMY-1106S Diode Fast Recovery Diode (F2Pin) 204
FMN-4206S Diode Ultrafast Recovery Diode (Frame) 206 FMY-2206S Diode Fast Recovery Diode (Frame) 204
FMN-G12S Diode Ultrafast Recovery Diode (F2Pin) 205 MGD623N Transistor IGBT 168
FMN-G14S Diode Ultrafast Recovery Diode (F2Pin) 206 MGD623S Transistor IGBT 168
FMN-G16S Diode Ultrafast Recovery Diode (F2Pin) 206 MPE-220A Diode Schottky Barrier Diode (Surface Mount) 208
FMNS-1106S Diode Ultrafast Recovery Diode (F2Pin) 206 MPEN-230AF Diode Schottky Barrier Diode (Surface Mount) 210
FMQ-G1FS Diode Fast Recovery Diode (F2Pin) 204 MPL-102S Diode Ultrafast Recovery Diode (Surface Mount) 205
FMQ-G2FLS Diode Fast Recovery Diode (F2Pin) 204 MPL-1036S Diode Ultrafast Recovery Diode (Surface Mount) 205
FMQ-G2FMS Diode Fast Recovery Diode (F2Pin) 204 PG001M IC Serial Signal Generator for SLA704xM 124
FMQ-G2FS Diode Fast Recovery Diode (F2Pin) 204 RA 13 Diode Schottky Barrier Diode (Axial) 209
FMQ-G5FMS Diode Fast Recovery Diode (F2Pin) 204 RBV-1306 Diode Rectifier Diode (Bridge) 202
FMQ-G5GS Diode Fast Recovery Diode (F2Pin) 204 RBV-1506 Diode Rectifier Diode (Bridge) 202
FMU-12R Diode Fast Recovery Diode (Frame) 203 RBV-1506J Diode Rectifier Diode (Bridge) 202
FMU-12S Diode Fast Recovery Diode (Frame) 203 RBV-1506S Diode Rectifier Diode (Bridge) 202
FMU-14R Diode Fast Recovery Diode (Frame) 203 RBV-150C Diode Rectifier Diode (Bridge) 202
FMU-14S Diode Fast Recovery Diode (Frame) 203 RBV-2506 Diode Rectifier Diode (Bridge) 202
FMU-16R Diode Fast Recovery Diode (Frame) 204 RBV-3006 Diode Rectifier Diode (Bridge) 202
FMU-22S Diode Fast Recovery Diode (Frame) 203 RBV-602L Diode Rectifier Diode (Bridge, Ultrafast Recovery Diode) 202
FMU-26S Diode Fast Recovery Diode (Frame) 204 RC 2 Diode Fast Recovery Diode (Axial) 204
FMU-G16S Diode Fast Recovery Diode (F2Pin) 204 RD1105 Diode Ultrafast Recovery Diode (Axial) 206
FMU-G26S Diode Fast Recovery Diode (F2Pin) 204 RD 2A Diode Ultrafast Recovery Diode (Axial) 206
FMU-G2FS Diode Fast Recovery Diode (F2Pin) 204 RD3305 Diode Ultrafast Recovery Diode (Axial) 206
FMV-G5FS Diode Fast Recovery Diode (F2Pin) 204 RF 1A Diode Fast Recovery Diode (Axial) 204
FMW-2106 Diode Schottky Barrier Diode (Frame) 209 RF 1B Diode Fast Recovery Diode (Axial) 204
FMW-2156 Diode Schottky Barrier Diode (Frame) 209 RG 1C Diode Ultrafast Recovery Diode (Axial) 207
FMW-2204 Diode Schottky Barrier Diode (Frame) 208 RG 2 Diode Ultrafast Recovery Diode (Axial) 206
FMW-2206 Diode Schottky Barrier Diode (Frame) 209 RG 2A Diode Ultrafast Recovery Diode (Axial) 206
FMW-24H Diode Schottky Barrier Diode (Frame) 208 RG 4AS Diode Ultrafast Recovery Diode (Axial) 206
FMW-24L Diode Schottky Barrier Diode (Frame) 208 RG 4C Diode Ultrafast Recovery Diode (Axial) 207
FMW-4306 Diode Schottky Barrier Diode (Frame) 209 RG 4S Diode Ultrafast Recovery Diode (Axial) 206

Part Number Index
RG 10 Diode Ultrafast Recovery Diode (Axial) 206 RO 2Z Diode Rectifier Diode (Axial) 201
RG 10A Diode Ultrafast Recovery Diode (Axial) 206 RP 1H Diode Ultrafast Recovery Diode (Axial) 207
RH 1A Diode Fast Recovery Diode (Axial) 204 RP 3F Diode Fast Recovery Diode (Axial) 204
RH 1B Diode Fast Recovery Diode (Axial) 204 RS 1A Diode Fast Recovery Diode (Axial) 204
RH 1C Diode Fast Recovery Diode (Axial) 204 RS 1B Diode Fast Recovery Diode (Axial) 204
RH 1Z Diode Fast Recovery Diode (Axial) 203 RS 3FS Diode Fast Recovery Diode (Axial) 204
RH 2D Diode Fast Recovery Diode (Axial) 204 RS 4FS Diode Fast Recovery Diode (Axial) 204
RH 2F Diode Fast Recovery Diode (Axial) 204 RU 1 Diode Fast Recovery Diode (Axial) 203
RH 3F Diode Fast Recovery Diode (Axial) 204 RU 1A Diode Fast Recovery Diode (Axial) 204
RH 3G Diode Fast Recovery Diode (Axial) 204 RU 1B Diode Fast Recovery Diode (Axial) 204
RH 4F Diode Fast Recovery Diode (Axial) 204 RU 1C Diode Fast Recovery Diode (Axial) 204
RJ 43 Diode Schottky Barrier Diode (Axial) 210 RU 1P Diode Ultrafast Recovery Diode (Axial) 207
RK 14 Diode Schottky Barrier Diode (Axial) 208 RU 2 Diode Fast Recovery Diode (Axial) 204
RK 16 Diode Schottky Barrier Diode (Axial) 209 RU 2AM Diode Fast Recovery Diode (Axial) 204
RK 19 Diode Schottky Barrier Diode (Axial) 209 RU 2B Diode Fast Recovery Diode (Axial) 204
RK 34 Diode Schottky Barrier Diode (Axial) 208 RU 2C Diode Fast Recovery Diode (Axial) 204
RK 36 Diode Schottky Barrier Diode (Axial) 209 RU 2M Diode Fast Recovery Diode (Axial) 203
RK 39 Diode Schottky Barrier Diode (Axial) 209 RU 2Z Diode Fast Recovery Diode (Axial) 203
RK 44 Diode Schottky Barrier Diode (Axial) 208 RU 20A Diode Fast Recovery Diode (Axial) 204
RK 46 Diode Schottky Barrier Diode (Axial) 209 RU 3 Diode Fast Recovery Diode (Axial) 203
RK 49 Diode Schottky Barrier Diode (Axial) 209 RU 3A Diode Fast Recovery Diode (Axial) 204
RL 2 Diode Ultrafast Recovery Diode (Axial) 206 RU 3AM Diode Fast Recovery Diode (Axial) 204
RL 2Z Diode Ultrafast Recovery Diode (Axial) 205 RU 3B Diode Fast Recovery Diode (Axial) 204
RL 3 Diode Ultrafast Recovery Diode (Axial) 206 RU 3C Diode Fast Recovery Diode (Axial) 204
RL 3A Diode Ultrafast Recovery Diode (Axial) 206 RU 3M Diode Fast Recovery Diode (Axial) 203
RL 3Z Diode Ultrafast Recovery Diode (Axial) 205 RU 30 Diode Fast Recovery Diode (Axial) 203
RL 4A Diode Ultrafast Recovery Diode (Axial) 206 RU 30Z Diode Fast Recovery Diode (Axial) 203
RM 1 Diode Rectifier Diode (Axial) 201 RU 4A Diode Fast Recovery Diode (Axial) 204
RM 1A Diode Rectifier Diode (Axial) 201 RU 4AMS Diode Fast Recovery Diode (Axial) 204
RM 1B Diode Rectifier Diode (Axial) 201 RU 4B Diode Fast Recovery Diode (Axial) 204
RM 1C Diode Rectifier Diode (Axial) 201 RU 4C Diode Fast Recovery Diode (Axial) 204
RM 1Z Diode Rectifier Diode (Axial) 201 RU 4D Diode Fast Recovery Diode (Axial) 204
RM 2 Diode Rectifier Diode (Axial) 201 RU 4DS Diode Fast Recovery Diode (Axial) 204
RM 2A Diode Rectifier Diode (Axial) 201 RU 4M Diode Fast Recovery Diode (Axial) 203
RM 2B Diode Rectifier Diode (Axial) 201 RU 4Z Diode Fast Recovery Diode (Axial) 203
RM 2C Diode Rectifier Diode (Axial) 201 RW54 Diode Schottky Barrier Diode (Axial) 208
RM 2Z Diode Rectifier Diode (Axial) 201 RX 3Z Diode Ultrafast Recovery Diode (Axial) 205
RM 3 Diode Rectifier Diode (Axial) 201 RX 10Z Diode Ultrafast Recovery Diode (Axial) 205
RM 3A Diode Rectifier Diode (Axial) 201 RY2A Diode Fast Recovery Diode (Axial) 204
RM 3B Diode Rectifier Diode (Axial) 201 RY3A Diode Fast Recovery Diode (Axial) 204
RM 3C Diode Rectifier Diode (Axial) 201 SAI01 IC Switching Mode Regulator IC (Surface Mount) 34
RM 4 Diode Rectifier Diode (Axial) 201 SAI02 IC Switching Mode Regulator IC (Surface Mount) 34
RM 4A Diode Rectifier Diode (Axial) 201 SAI03 IC Switching Mode Regulator IC (Surface Mount) 34
RM 4AM Diode Rectifier Diode (Axial) 201 SCM1101M IC High Voltage 3 Phase Motor Driver IC 144
RM 4C Diode Rectifier Diode (Axial) 201 SCM1101MF IC High Voltage 3 Phase Motor Driver IC 144
RM 4Y Diode Rectifier Diode (Axial) 201 SCM1103M IC High Voltage 3 Phase Motor Driver IC 144
RM 4Z Diode Rectifier Diode (Axial) 201 SCM1104M IC High Voltage 3 Phase Motor Driver IC 144
RM 10 Diode Rectifier Diode (Axial) 201 SCM1104MF IC High Voltage 3 Phase Motor Driver IC 144
RM 10A Diode Rectifier Diode (Axial) 201 SCM1105MF IC High Voltage 3 Phase Motor Driver IC 144
RM 10B Diode Rectifier Diode (Axial) 201 SCM1106M IC High Voltage 3 Phase Motor Driver IC 144
RM 10Z Diode Rectifier Diode (Axial) 201 SCM1106MF IC High Voltage 3 Phase Motor Driver IC 144
RM 11A Diode Rectifier Diode (Axial) 201 SCM1110MF IC High Voltage 3 Phase Motor Driver IC 144
RM 11B Diode Rectifier Diode (Axial) 201 SDA05 Transistor Array for 3-Phase Motor Drive (Surface Mount) 170
RM 11C Diode Rectifier Diode (Axial) 201 SDC03 Transistor Array for Sink Drive (Surface Mount) 170
RN 1Z Diode Ultrafast Recovery Diode (Axial) 205 SDC04 Transistor Array for Sink Drive (Surface Mount) 170
RN 2Z Diode Ultrafast Recovery Diode (Axial) 205 SDC06 Transistor Array for Sink Drive (Surface Mount) 170
RN 3Z Diode Ultrafast Recovery Diode (Axial) 205 SDC07 Transistor Array for 3-Phase Motor Drive (Surface Mount) 170
RN 4A Diode Ultrafast Recovery Diode (Axial) 206 SDH02 Transistor Array for Sink Drive (Surface Mount) 170
RN 4Z Diode Ultrafast Recovery Diode (Axial) 205 SHV-06EN Diode High-Voltage Rectifier Diode 211
RO 2 Diode Rectifier Diode (Axial) 201 SHV-08EN Diode High-Voltage Rectifier Diode 211
RO 2B Diode Rectifier Diode (Axial) 201 SI-3002KWM IC Multi-0utput Regulator IC (Surface Mount) 96
RO 2C Diode Rectifier Diode (Axial) 201 SI-3010KD IC Linear Regulator IC (Surface Mount) 20

Part Number Index
SI-3010KF IC Linear Regulator IC 28 SJPA-D3 Diode Schottky Barrier Diode (Surface Mount) 209
SI-3010KM IC Linear Regulator IC (Surface Mount) 16 SJPA-H3 Diode Schottky Barrier Diode (Surface Mount) 209
SI-3010LLSL IC Linear Regulator IC (Surface Mount) 24 SJPA-L3 Diode Schottky Barrier Diode (Surface Mount) 209
SI-3011ZD IC Linear Regulator IC (Surface Mount) 26 SJPB-D4 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3011ZF IC Linear Regulator IC 30 SJPB-D6 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3012KD IC Linear Regulator IC (Surface Mount) 20 SJPB-D9 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3012KM IC Linear Regulator IC (Surface Mount) 16 SJPB-H4 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3012KS IC Linear Regulator IC (Surface Mount) 14 SJPB-H6 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3012LU IC Linear Regulator IC (Surface Mount) 10 SJPB-H9 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3018LSA IC Linear Regulator IC (Surface Mount) 12 SJPB-L4 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3025KM IC Linear Regulator IC (Surface Mount) 16 SJPB-L6 Diode Schottky Barrier Diode (Surface Mount) 208
SI-3025KS IC Linear Regulator IC (Surface Mount) 14 SJPD-D5 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-3025LSA IC Linear Regulator IC (Surface Mount) 12 SJPD-L5 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-3033KD IC Linear Regulator IC (Surface Mount) 20 SJPE-H3 Diode Schottky Barrier Diode (Surface Mount) 210
SI-3033KM IC Linear Regulator IC (Surface Mount) 16 SJPE-H4 Diode Schottky Barrier Diode (Surface Mount) 210
SI-3033KS IC Linear Regulator IC (Surface Mount) 14 SJPJ-D3 Diode Schottky Barrier Diode (Surface Mount) 210
SI-3033LSA IC Linear Regulator IC (Surface Mount) 12 SJPJ-H3 Diode Schottky Barrier Diode (Surface Mount) 210
SI-3033ZD IC Linear Regulator IC (Surface Mount) 26 SJPJ-L3 Diode Schottky Barrier Diode (Surface Mount) 210
SI-3050KD IC Linear Regulator IC (Surface Mount) 20 SJPL-D2 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-3050KM IC Linear Regulator IC (Surface Mount) 16 SJPL-F4 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-3050LSA IC Linear Regulator IC (Surface Mount) 12 SJPL-H2 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-3090KM IC Linear Regulator IC (Surface Mount) 16 SJPL-L4 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-3120KM IC Linear Regulator IC (Surface Mount) 16 SJPL-H6 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-7321M IC 2-phase Stepper Motor Unipolar Driver IC 118 SJPM-H4 Diode Rectifier Diode (Surface Mount) 201
SI-7510 IC 5-phase Stepper Motor Driver IC 128 SJPW-F6 Diode Schottky Barrier Diode (Surface Mount) 208
SI-8001FDE IC Switching Mode Regulator IC (Surface Mount) 50 SJPX-F2 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-8001FDL IC Switching Mode Regulator IC (Surface Mount) 50 SJPX-H3 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-8001FFE IC Switching Mode Regulator IC 66 SJPX-H6 Diode Ultrafast Recovery Diode (Surface Mount) 205
SI-8005Q IC Switching Mode Regulator IC (Surface Mount) 48 SJPZ-E20 Diode Power Zener Diode (Surface Mount) 212
SI-8008HD IC Switching Mode Regulator IC (Surface Mount) 52 SJPZ-E33 Diode Power Zener Diode (Surface Mount) 212
SI-8008HFE IC Switching Mode Regulator IC 68 SJPZ-K28 Diode Power Zener Diode (Surface Mount) 212
SI-8008TFE IC Switching Mode Regulator IC 58 SJPZ-N18 Diode Power Zener Diode (Surface Mount) 212
SI-8008TM IC Switching Mode Regulator IC (Surface Mount) 40 SJPZ-N27 Diode Power Zener Diode (Surface Mount) 212
SI-8010GL IC Switching Mode Regulator IC 60 SJPZ-N33 Diode Power Zener Diode (Surface Mount) 212
SI-8010Y IC Switching Mode Regulator IC 70 SJPZ-N40 Diode Power Zener Diode (Surface Mount) 212
SI-8011NVS IC Switching Mode Regulator IC (Surface Mount) 72 SKP202 Transistor MOS FET 164
SI-8015JF IC Switching Mode Regulator IC 56 SKP253 Transistor MOS FET 164
SI-8033JD IC Switching Mode Regulator IC (Surface Mount) 38 SLA0201 Thyristor Thyristor Array 188
SI-8033JF IC Switching Mode Regulator IC 56 SLA4030 Thyristor Array for Sink Drive 170
SI-8033S IC Switching Mode Regulator IC 62 SLA4031 Thyristor Array for Sink Drive 170
SI-8033SD IC Switching Mode Regulator IC (Surface Mount) 42 SLA4041 Thyristor Array for Sink Drive 170
SI-8033W IC Switching Mode Regulator IC (Surface Mount) 36 SLA4051 Thyristor Array for Sink Drive 170
SI-8050E IC Switching Mode Regulator IC 54 SLA4052 Thyristor Array for Sink Drive 170
SI-8050HFE IC Switching Mode Regulator IC 68 SLA4060 Thyristor Array for Sink Drive 170
SI-8050JD IC Switching Mode Regulator IC (Surface Mount) 38 SLA4061 Thyristor Array for Sink Drive 170
SI-8050JF IC Switching Mode Regulator IC 56 SLA4070 Thyristor Array for Source Drive 170
SI-8050S IC Switching Mode Regulator IC 62 SLA4071 Thyristor Array for Source Drive 170
SI-8050SD IC Switching Mode Regulator IC (Surface Mount) 42 SLA4390 Thyristor Array for H-Bridge Motor Drive 170
SI-8050TFE IC Switching Mode Regulator IC 58 SLA5022 Thyristor Array for 3-Phase Motor Drive 170
SI-8050W IC Switching Mode Regulator IC (Surface Mount) 36 SLA5037 Thyristor Array for Sink Drive 170
SI-8050Y IC Switching Mode Regulator IC 70 SLA5041 Thyristor Array for Sink Drive 170
SI-8090JD IC Switching Mode Regulator IC (Surface Mount) 38 SLA5059 Thyristor Array for 3-Phase Motor Drive 170
SI-8090S IC Switching Mode Regulator IC 62 SLA5060 Thyristor Array for 3-Phase Motor Drive 170
SI-8105QL IC Switching Mode Regulator IC 64 SLA5061 Thyristor Array for 3-Phase Motor Drive 170
SI-8120JD IC Switching Mode Regulator IC (Surface Mount) 38 SLA5064 Thyristor Array for 3-Phase Motor Drive 170
SI-8120JF IC Switching Mode Regulator IC 56 SLA5065 Thyristor Array for 5-Phase Motor Drive 170
SI-8205NHD IC Switching Mode Regulator IC (Surface Mount) 80 SLA5074 Thyristor Array for 5-Phase Motor Drive 170
SI-8401L IC Switching Mode Regulator IC (with Coil) 86 SLA5075 Thyristor Array for 3-Phase Motor Drive 170
SI-8405NH IC Switching Mode Regulator IC (Surface Mount) 78 SLA5085 Thyristor Array for Sink Drive 170
SI-8405NL IC Switching Mode Regulator IC (Surface Mount) 74 SLA5086 Thyristor Array for Source Drive 170
SI-8501L IC Switching Mode Regulator IC (with Coil) 86 SLA5096 Thyristor Array for 3-Phase Motor Drive 170
SI-8511NVS IC Switching Mode Regulator IC (Surface Mount) 76 SLA5201 Thyristor Array for 3-Phase Motor Drive 170

Part Number Index
SLA5212 Thyristor Array for 3-Phase Motor Drive 170 SMA5106 Transistor Array for Sink Drive 170
SLA5222 Thyristor Array for Simplifed PFC 170 SMA5112 Transistor Array for 3-Phase Motor Drive 170
SLA6012 Thyristor Array for 3-Phase Motor Drive 170 SMA5117 Transistor Array for 3-Phase Motor Drive 170
SLA6805MP IC High Voltage 3 Phase Motor Driver IC 142 SMA5132 Transistor Array for 3-Phase Motor Drive 170
SLA6826M IC High Voltage 3 Phase Motor Driver IC 134 SMA5133 Transistor Array for 3-Phase Motor Drive 170
SLA6845M IC High Voltage 3 Phase Motor Driver IC 140 SMA6511 Transistor Array for Stepper Motor drive 171
SLA6868M IC High Voltage 3 Phase Motor Driver IC 138 SMA6821MP IC High Voltage 3 Phase Motor Driver IC 134
SLA7022MU IC 2-phase Stepper Motor Unipolar Driver IC 100 SMA6822MP IC High Voltage 3 Phase Motor Driver IC 134
SLA7024M IC 2-phase Stepper Motor Unipolar Driver IC 104 SMA6823MP IC High Voltage 3 Phase Motor Driver IC 134
SLA7026M IC 2-phase Stepper Motor Unipolar Driver IC 104 SMA6861M IC High Voltage 3 Phase Motor Driver IC 138
SLA7027MU IC 2-phase Stepper Motor Unipolar Driver IC 104 SMA6862M IC High Voltage 3 Phase Motor Driver IC 138
SLA7029M IC 2-phase Stepper Motor Unipolar Driver IC 100 SMA6863M IC High Voltage 3 Phase Motor Driver IC 138
SLA7031M IC 2-phase Stepper Motor Unipolar Driver IC 106 SMA7022MU IC 2-phase Stepper Motor Unipolar Driver IC 100
SLA7032M IC 2-phase Stepper Motor Unipolar Driver IC 106 SMA7029M IC 2-phase Stepper Motor Unipolar Driver IC 100
SLA7033M IC 2-phase Stepper Motor Unipolar Driver IC 106 SMA7036M IC 2-phase Stepper Motor Unipolar Driver IC 102
SLA7042M IC 2-phase Stepper Motor Unipolar Driver IC 114 SPB-64S Diode Schottky Barrier Diode (Surface Mount) 208
SLA7044M IC 2-phase Stepper Motor Unipolar Driver IC 114 SPB-G34S Diode Schottky Barrier Diode (Surface Mount) 208
SLA7052M IC 2-phase Stepper Motor Unipolar Driver IC 108 SPI-6631M IC Brushless DC Motor Driver IC 132
SLA7060M IC 2-phase Stepper Motor Unipolar Driver IC 120 SPI-8001TW IC Multi-Output Regulator IC (Surface mount) 92
SLA7065M IC 2-phase Stepper Motor Unipolar Driver IC 116 SPI-8010A IC Switching Mode Regulator IC (Surface Mount) 44
SLA7066M IC 2-phase Stepper Motor Unipolar Driver IC 116 SPX-62S Diode Ultrafast Recovery Diode (Surface Mount) 205
SLA7067M IC 2-phase Stepper Motor Unipolar Driver IC 116 SPX-G32S Diode Ultrafast Recovery Diode (Surface Mount) 205
SLA7070MPR IC 2-phase Stepper Motor Unipolar Driver IC 110 STA203A Thyristor Triac Array 190
SLA7070MR IC 2-phase Stepper Motor Unipolar Driver IC 110 STA301A Transistor Array for Sink Drive 171
SLA7071MPR IC 2-phase Stepper Motor Unipolar Driver IC 110 STA302A Transistor Array for 3-Phase Motor Drive and Source Drive 171
SLA7071MR IC 2-phase Stepper Motor Unipolar Driver IC 110 STA303A Transistor Array for 3-Phase Motor Drive and Sink Drive 171
SLA7072MPR IC 2-phase Stepper Motor Unipolar Driver IC 110 STA322A Transistor Array for Source Drive 171
SLA7075MPR IC 2-phase Stepper Motor Unipolar Driver IC 122 STA404A Transistor Array for Sink Drive 171
SLA7077MR IC 2-phase Stepper Motor Unipolar Driver IC 122 STA421A Transistor Array for Source Drive 171
SLA7078MPR IC 2-phase Stepper Motor Unipolar Driver IC 122 STA431A Transistor Array for H-Bridge Motor Drive 171
SLA7078MR IC 2-phase Stepper Motor Unipolar Driver IC 122 STA434A Transistor Array for H-Bridge Motor Drive 171
SLA7080MPR IC 2-phase Stepper Motor Unipolar Driver IC 112 STA457C Transistor Array for H-Bridge Motor Drive 171
SLA7080MR IC 2-phase Stepper Motor Unipolar Driver IC 112 STA460C Transistor Array for Sink Drive 171
SLA7081MR IC 2-phase Stepper Motor Unipolar Driver IC 112 STA472A Transistor Array for Source Drive 171
SLA7611M IC 3-phase Stepper Motor Driver IC 126 STA491A Transistor Array for H-Bridge Motor Drive 171
SMA4020 Transistor Array for Source Drive 170 STA6940M IC Brush DC Motor Driver IC 130
SMA4021 Transistor Array for Source Drive 170 STA801M IC Multi-output Regulator IC 90
SMA4030 Transistor Array for Sink Drive 170 STA811M IC Switching Mode Regulator IC 82
SMA4032 Transistor Array for Sink Drive 170 STA821M IC Switching Mode Regulator IC 84
SMA4033 Transistor Array for Sink Drive 170 STD01N Transistor Audio (Darlington) 160
SMA4036 Transistor Array for Sink Drive 170 STD01P Transistor Audio (Darlington) 160

Part Number Index
Part No. Category Description Page
STD03N Transistor Audio (Darlington) 160

STD03P Transistor Audio (Darlington) 160
SV-3SS Diode Silicon Varistor (Axial) 213
SV-4SS Diode Silicon Varistor (Axial) 213
SX68001M IC High Voltage 3 Phase Motor Driver IC 136
SZ-10N27 Diode Power Zener Diode (Surface Mount) 212
SZ-10N40 Diode Power Zener Diode (Surface Mount) 212
SZ-10NN27 Diode Power Zener Diode (Surface Mount) 212
SZ-10NN40 Diode Power Zener Diode (Surface Mount) 212
TF361H-A Thyristor Thyristor 188
TF541S-A Thyristor Thyristor 188
TF561S-A Thyristor Thyristor 188
TFA37S Thyristor Thyristor 188
TFC563D Thyristor Thyristor for HID Lamp Ignition 188
TMA104S-L Thyristor Triac 190
TMA106G-L Thyristor Triac 190
TMA106H-L Thyristor Triac 190
TMA164B-L Thyristor Triac 190
TMA164P-L Thyristor Triac 190
TMA166P-L Thyristor Triac 190
TMB166S-L Thyristor Triac 190
TMB206S-L Thyristor Triac 190
VR-60SS Diode Silicon Varistor (Axial) 213
VR-61SS Diode Silicon Varistor (Axial) 213

Bulletin No
Sanken Electric Co., Ltd. O03EE0
Overseas Sales Headquarters （Apr, 2010）
SEMICONDUCTORS GENERAL CATALOG 2010

Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro
Toshima-ku, Tokyo 171-0021, Japan
Te l : 81-3-3986-6164
Fax: 81-3-3986-8637
WORLDWIDE SALES OFFICES
SEMICONDUCTORS GENERAL CATALOG

Asia-Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road
Tsimshatsui, Kowloon, Hong Kong
Te l : 852-2735-5262 ICS TRANSISTORS THYRISTORS DIODES
Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.

Room 3202, Maxdo Centre, Xingyi Road 8
Changning District, Shanghai, China
Te l : 86-21-5208-1177
Fax: 86-21-5208-1757
Sanken Electric (Shanghai) Co., Ltd. Shenzhen Office

Room 1013, Xinhua Insurance Building, Mintian Road, Futian District,
Shenzhen City, Guangdong, China
Tel : 86-755-3391-9356
Fax: 86-755-3391-9368
Taiwan Sanken Electric Co., Ltd.

Room 1801, 18th Floor, 88 Jung Shiau East Road
Sec. 2, Taipei 100, Taiwan R.O.C.
Te l : 886-2-2356-8161
Fax: 886-2-2356-8261
Korea
Sanken Electric Korea Co., Ltd.
Samsung Life Yeouido Building 16F,
23-10, Yeouido-Dong, Yeongdeungpo-gu,
Seoul 150-734, Korea
Te l : 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West
Singapore 189720
Te l : 65-6291-4755
Fax: 65-6297-1744
Malaysia
Sanken Electric (Malaysia) Sdn. Bhd.
Block B-20-5, Level 20, Northpoint Midvalley City,
No.1, Medan Syed Putra Utara, 59200 Kuala Lumpur, Malaysia
Te l : 60-3-2282-2345
Fax: 60-3-2282-6345
Europe
United Kingdom
Sanken Power Systems (UK) Ltd.
Pencoed Technology Park
Pencoed, Bridgend CF35 5HY, United Kingdom

Te l : 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
115 Northeast Cutoff
Worcester, Massachusetts 01606, U.S.A.
Te l : 1-508-853-5000
Fax: 1-508-853-7895

14 Hughes Street, Suite B105
Irvine, California 92618, U.S.A.
Te l : 1-949-460-2003
Fax: 1-949-460-7837
This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:
1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
3. Allow any other party to use these products/technology for activities disturbing international peace and security.
Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology,
under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad. H1-O03EE0-1004015ND
http://www.sanken-ele.co.jp/en/index.html

Sanken General Semiconductors Catalog

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Bulletin No

Sanken Electric Co., Ltd. O03EE0

SEMICONDUCTORS GENERAL CATALOG 2010

WORLDWIDE SALES OFFICES

SEMICONDUCTORS GENERAL CATALOG

Sanken Electric (Shanghai) Co., Ltd.

Sanken Electric (Shanghai) Co., Ltd. Shenzhen Office

Taiwan Sanken Electric Co., Ltd.

SANKEN ELECTRIC CO., LTD.

Allegro MicroSystems, Inc.

Part Number Index ........................................................................ 216

Ordering Information & Standard Packing Quantities ................ 4

SI-8400L Non–package type 864 – STA6940M ZIP18(STA18Pin) LF.No434:1785 –

SI-8500L Non–package type 320 – SX68000M SOP27 – 1000

SI-8511NVS TSSOP24 – 2800

SI-3000LU 0.25 SOT89-5 Drooping 10

SI-3000LSA 1.0 SOP8 Foldback 12

SI-3000KS 1.0 SOP8 Drooping 14

SI-3000KM 1.0 TO252-5 Foldback*1 16

SI-3000KD 1.0 TO263-5 Foldback*2 20

SI-3000LLSL 1.5 SOP8 Foldback 24

SI-3000ZD 3.0 TO263-5 Foldback 26

*1: Drooping for SI-3012KM/3025KM/3033KM

Series Name (V) Package Low Current Output Overcurrent Page

SI-3000KF 1.0 TO220F-5 Foldback 28

SI-3000ZF 3.0 TO220F-5 Foldback 30

Switching Mode Regulator ICs (built-in overcurrent, thermal protection circuits)

SI-8000W 0.6 35 SOP8 – – Drooping 36

SI-8000JD 1.5 43 TO263-5 Foldback 38

SI-8000TM 1.5 43 TO252-5 Drooping 40

SI-8000SD 3.0 43 TO263-5 – Drooping 42

SPI-8000A 3.0 53 HSOP16 Foldback 44

SI-8000Q* 3.5 30 HSOP8 Drooping 48

SI-8000FDE 3.5 43 TO263-5 – Drooping 50

SI-8000FDL 3.5 43 TO263-5 Drooping 50

SI-8000HD 5.5 43 TO263-5 Drooping 52

SI-8000E 0.6 43 TO220F-5 – – Drooping 54

SI-8000JF 1.5 43 TO220F-5 Foldback 56

SI-8000TFE 1.5 43 TO220F-5 Drooping 58

SI-8000GL 1.5 53 DIP8 Foldback 60

SI-8000S 3.0 43*1 TO220F-5 – Drooping 62

SI-8100QL*2 3.5 30 DIP8 Drooping 64

SI-8000FFE 3.5 43 TO220F-5 – Drooping 66

SI-8000HFE 5.5 43 TO220F-5 Drooping 68

SI-8100Y*2 8.0 45 TO220F-7 Drooping 70

*1: 35V for SI-8033S

Oscillation Frequency Variable (Reference Voltage) Maximum

SI-8011NVS – 25 TSSOP24 – Foldback 72

SI-8405NL – 6 SOP8 – Drooping 74

SI-8511NVS – 25 TSSOP24 – Drooping 76

SI-8405NH – 6 SOP8 – Drooping 78

SI-8205NHD 3.0 46 HSOP8 Drooping 80

Flywheel Diode (Schottky-Barrier Diode) Built-in Type

STA810M 1.5 43 SIP8 (STA8Pin) Foldback 82

STA820M 3.0 31 SIP8 (STA8Pin) – Drooping 84

Multi Output Type Regulator ICs

Built i-in flywheel diode

ch1 Variable(1.0-16V) 1.5 Foldback ™ ™

■ Rectifier Diodes for Power Supplies

Series Name Diodes

■Features ■Absolute Maximum Ratings (Ta=25°C)

■Recommended Operating Conditions

■Electrical Characteristics (Ta=25°C, VC=2V unless otherwise specified)