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Physics 545
-10
In fact the different k-states
k states all
-12
equivalent. -14
-16
and
d G is
i a reciprocal
i l lattice
l i vector.
ψ(r + R ) ≡ eik′.R eiG.R ψ(r )
But G.R = 2πn, n-integer. Definition of the reciprocal lattice. So
eiG.R = 1 and ψ(r + R ) ≡ eik′.R ψ(r ) e ik.R ≡ e ik ′.R
k′ is exactly equivalent to k.
k
The only independent values of k are those in the first Brillouin zone.
Reduced Brillouin zone scheme
The only
y independent
p values of k are those in the first Brillouin zone.
Discard for
|k| > π/a
2π/a
-2π/a Displace into
1st B.
B ZZ.
P i di Zone
Periodic Z Reduced
R d d Zone
Z Extended
E d d Zone
Z
All allowed states correspond to k-vectors in the first Brillouin Zone.
Can draw E(k) in 3 different ways
The number of states in a band
Independent k-states in the first Brillouin zone, i.e. ⏐kx⏐ < π/a etc.
2πn x
Finite crystal: only discrete k states allowed
k-states kx = ± , n x = 0,1,2,.... etc.
L
Monatomic simple cubic crystal, lattice constant a, and volume V.
0 π k
a
Metal
M t l due
d tot
overlapping bands
E E
EF
0 π k 0 π k
a a
0 π k
a
Empty Band
Partially
Energy Gap Filled Band Part Filled Band
EF
Full Band
Part Filled Band
Energy Gap
Full Band
• if th
the energy gap is
i large
l h
however excitation
it ti
cannot be achieved and so no net current is
allowed to flow
k
−π/a π/a
⇒By the same arguments if the energy band is PARTIALLY filled then it should be very
EASY to generate a net current flow in the crystal
⇒ In this situation the forbidden gap lies FAR away from the highest filled electron states
and so it is easyy to use an electric field to ggenerate an imbalance in the fillingg of momentum
states
⇒ A small applied voltage will therefore generate a LARGE current as we discussed
previously for free electrons
E E
k k
FILLED STATES
FILLED STATES
METAL INSULATOR
Band structure of metals
monovalent
l metals
l multivalent metals, semimetals
⇒What types
yp of elements produce
p partial
p or complete
p fillingg of energy
gy
bands?
⇒ The GROUP I elements should be good METALS since these elements
h
have only
l ONE valence
l electron,
l t whereas
h coordination
di ti number b is i 6-12.
6 12
⇒ If we have a crystal composed of N atoms there will therefore be N
valence electrons which will HALF-FILL a single g energy
gy band
⇒ The GROUP IV elements should be INSULATORS since these
elements have FOUR valence electrons and so in an N-atom crystal there
will 4N valence electrons that FILL two energy bands completely
E
FILLED STATES
FILLED STATES
FILLED STATES
FILLING OF ENERGY LEVELS BY THE
VALENCE ELECTRONS OF GROUP I & IV
GROUP I GROUP IV ELEMENTS
Semiconductors
• In certain materials known as SEMICONDUCTORS however the energy gap that separates
the highest filled band in the ground state from the lowest empty band is SMALL
* Such materials are INSULATORS at zero temperature since their ground state is one in
which the energy bands are either completely full or empty
* Since the forbidden gap is small however electrons can be EXCITED across it at
higher temperatures to PARTIALLY fill the next band
FORBIDDEN GAP
•The lowest empty band is known as the CONDUCTION BAND. BAND It is usually formed
by antibonding orbitals.
⇒ The energy gap that separates these bands is usually denoted as Eg
* Room
R temperature
t t semiconductors
i d t are generally ll materials
t i l ini which
hi h Eg is
i a FEW eV
V
(≤ 3 eV)
⇒ This should be compared to a thermal energy of approximately 40 meV that is
available to electrons at room temperature (300 K)
E
SEMICONDUCTOR Eg (eV)
0K 300 K CONDUCTION
BAND
Si 1.17 1.11
Ge 0.74 0.66 Eg
InSb 0.23 0.17
InAs 0.43 0.36
InP 1.42 1.47 VALENCE BAND
GaP 2.32 2.25
GaAs 1 52
1.52 1
1.43
43
GaSb 0.81 0.68
AlSb 1.65 1.60
SEMICONDUCTOR
T=0
Concept of a hole
• At higher temperatures electrons in semiconductors may be excited into the
conduction band where they are able carry an electrical current
* Each electron leaves behind an EMPTY state in the valence band and to account
for current flow in semiconductors we must ALSO consider the role of these HOLE
states
* If the valence band is COMPLETELY filled, then the total crystal momentum of
this
hi bband
d iis equall to ZERO since
i for
f any occupied
i d k-state
k we can identify
id if an
corresponding filled state with OPPOSITE momentum
E
• The total crystal momentum in a filled energy
band is exactly equal to zero
• to illustrate this consider the total momentum
d to occupation of states 1 & 2
due
ENERGY GAP • state 1 corresponds to an electron with positive
2 1 momentum while state 2 corresponds to one
with
ith equall andd opposite
it momentumt
• the net crystal momentum of electrons occupying
states 1 & 2 is zero and this pairing can be repeated
k for all other states in the band
−π/a π/a
• When the valence band is completely filled with electrons we can write
∑k i =0
(17)
* if we excite AN electron from the state with wavenumber
ke in the valence band into the conduction band equation (17) for the valence band may
now be REWRITTEN as
∑k
ki ≠ k e
i = − ke (18)
* The empty state in the valence band may therefore be viewed as a HOLE which has
OPPOSITE momentum to the electron that was excited out of that state
kh = − ke (19)
• Since the hole corresponds to a missing electron its energy may be written as
Eh ( k h ) = − Ee ( − k e ) = − Ee ( k e ) (20)
* Equation 10.4 shows that electrons and holes have OPPOSITE energy scales
since moving DOWNWARD in the valence band implies INCREASING hole energy
1 d
vh = Eh ( k h )
= dkh
1 d 1 d
=− ( − Ee ( ke )) = E e ( k e ) = ve
= dke = dke
* Using the same approach we can also show that the effective mass of the hole is a
NEGATIVE quantity
1 1 d 1 d
= E ( k ) = ( − (− Ee ( ke )))
= (− ke ) dke
h h
mh = kh dkh
* 2 2
1 d 1
=− ( E e ( k e )) = −
= 2ke dke me*
• It is important to appreciate that we do NOT actually have positively-charged carriers in
the
h semiconductor
i d but
b that
h theh holes
h l simply
i l behave
b h AS IF they
h hhadd positive
i i charge
h
* The basic idea is that EACH of the OCCUPIED electron states in the valence band
responds to externally-applied fields as we would expect for a negatively-charged
carrier.
rri r The
Th NET response
r p n off the
th band
b nd however
h r LOOKS like
lik the
th response
r p n off a single
in l
particle with a POSITIVE charge!
When we discuss conduction band properties of semiconductors or insulators we refer to
electrons but when we discuss the valence properties,
electrons, properties we refer to holes.
holes This is because
in the valence band only the missing electrons or holes lead to current flow.
ELECTRIC
E E
FIELD
k k
3/ 2
⎡ 2 πme*k BT ⎤
n = N c e ( E F − Ec ) / k B T , Nc = 2 ⎢ 2 ⎥
⎣ h ⎦
3/ 2
⎡ 2πmh*k BT ⎤
p = N v e ( Ev − E F ) / k BT , Nv = 2 ⎢ 2 ⎥
⎣ h ⎦
For pure semiconductor EF ≈E Eg/2
n=p ≈C T2/3exp(-Eg /2kT)
C is a material constant
n p ≈C
n·p C T2/3exp(-E
exp( Eg /kT)=ni ni is
i concentration
t ti off intrinsic
i ti i
carriers
Impurities in semiconductors: Doping
n-type
yp Band
Diagram
p yp Band
p-type
Diagram
Concentration
C t ti off electrons
l t and
d h l
holes i
in
semiconductors can be tailored by introducing impurities
(doping) In this case concentration of electrons and
Interesting to know
$Band gap increases with increasing the strength of the chemical
bonds in the semiconductor.
Example:
p Diamond > Silicon > Germanium
AlN 6.2 w
AlAs 2 15 w
2.15
GaN 3.44 w
GaP 2.27 s
GaAs 1.42 s
InP 1.34 s
InAs 0.35 s
InSb 0.23 s Sphalerite Wurtzite
1. Most
1 M off the
h ddefects
f are substitutional.
b i i l
2. The substitution site is largely defined by ionic radii.
Example: Be substitutes Ga, Te substitute As in GaAs.
Homework: Determine the doping action of Be and Te in GaAs.
Interesting to know: both structures are polar (have a specific directio
Chemistry of doping: examples.
3. II-VI semiconductors. Structure: cubic (sphalerite) or
hexagonal
ZnSe 2.8 w 1. Most of the defects are substitutional.
2. The substitution site is largely defined by ionic radii.
ZnTe 2.4 w
Example: In substitutes Cd, As substitute Te in CdTe.
CdS 24
2.4 w
3. Electrical properties of II-VI crystals are stronly
CdTe 1.4 s affected by natural defects.