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PERAMBALUR-621212
COURSE PLAN
Syllabus:
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DSEC / S&H (Physics) / PH8151 / I / I
Single crystalline, polycrystalline and amorphous materials – single crystals: unit cell, crystal
systems, Bravais lattices, directions and planes in a crystal, Miller indices – inter-planar distances
- coordination number and packing factor for SC, BCC, FCC, HCP and diamond structures -
crystal imperfections: point defects, line defects – Burger vectors, stacking faults – role of
imperfections in plastic deformation - growth of single crystals: solution and melt growth
techniques.
Objective:
To enhance the fundamental knowledge in Physics and its applications relevant to various
streams of Engineering and Technology.
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DSEC / S&H (Physics) / PH8151 / I / I
Course Plan:
Torsional pendulum:
4 S1 1.24-1.32 Lecture 1 4
Theory and experiment
Bending of beams,
5 S1 1.23 Lecture 1 5
bending moment
Uniform bending:
7 S1 1.37 Lecture 1 7
Theory and experiment
Non-uniform bending:
8 S2 1.51-1.53 Lecture 1 8
Theory and experiment
Outcome of Unit I:
CO1: The students will gain knowledge on the basics of elastic property of material and its applications
UNIT II
Oscillatory motion,
33.1-
10 Forced and damped T2 33.3&333.16- Lecture 1 10
oscillation 33.19
Differential equation and
11 T2 34.7-34.10 Lecture 1 11
its solution
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DSEC / S&H (Physics) / PH8151 / I / I
Lasers – population of
energy levels, Einstein’s
13 S1 3.2 PPT 1 13
A & B coefficients-
derivation
Semiconductor lasers:
15 homo junction and S3 577-579 PPT 1 15
hetero junction
Types of fibers(material,
refractive index, mode),
17 S1 4.8 Lecture 1 17
losses associated with
optical fibers
UNIT III
Transfer of heat energy,
19 thermal expansion in S1 5.2 Lecture 1 19
solids and liquids
Expansion joints, bi
20 S2 5.4-5.11 Lecture 1 20
metallic strips
Thermal conduction,
21 convection and radiation, S1 5.2 Lecture 1 21
heat conduction in solids
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DSEC / S&H (Physics) / PH8151 / I / I
and experiment
Conduction through
24 compound media( series S1 5.23 Lecture 1 24
and parallel)
Application-heat
26 S1 5.29 PPT 1 26
exchangers, refrigerators
UNIT IV
28 Black body radiation S1 6.2 Lecture 1 28
Planck’s theory
29 T2 56.1-56.3 Lecture 1 29
-derivation
Electron diffraction-
concept of wave function
32 S1 6.22 Lecture 1 32
and its physical
significance
Schrodinger’s wave
33 equations- time T2 57.9-57.10 Lecture 1 33
independent equations
Schrodinger’s wave
34 equations- time T2 57.9-57.10 Lecture 1 34
dependent equations
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DSEC / S&H (Physics) / PH8151 / I / I
Tunneling(qualitative),
36 Scanning Tunneling S3 580-581 Lecture 1 36
Microscope
UNIT V
Single crystalline, poly
37 crystalline and S1 7.2 Lecture 1 37
amorphous materials
Coordination number
and packing factor for
41 S2 7.38-7.45 PPT 1 41
HCP and diamond
structures
Crystal imperfections:
42 point defects and line S3 541-544 Lecture 1 42
defects
Role of imperfections in
44 S1 7.67 Lecture 1 44
plastic deformation
Growth of single
45 crystals: solution and S2 7.82-7.90 Lecture 1 45
melt growth techniques
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DSEC / S&H (Physics) / PH8151 / I / I
Outcome of Unit V:
CO6: The students will understand the basics of crystals, their structures and different crystal growth
techniques.
Course Outcome:
CO PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12
CO 1 3 3 2 3 3 3 0 0 0 2 0 0
CO 2 2 3 3 3 1 3 0 0 0 2 0 0
CO 3 3 2 3 2 3 3 0 0 0 3 0 0
CO 4 1 3 3 3 2 2 0 0 0 3 0 0
CO 5 3 2 1 2 3 1 0 0 0 3 0 0
CO6 3 3 3 3 3 3 0 0 0 3 0 0
Laser welding, cutting& drilling- fabrication of optical fibre: double crucible method-Bragg’s
spectrometer-SEM- Vapour deposition method for growing crystals
Assignment: 1
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DSEC / S&H (Physics) / PH8151 / I / I
Mode of
Batch Register Total Assignment
Topics
Details Number Number MCQ/Semi
nar/PPT
1. Twisting couple on a wire.
Batch 1 MCQ 2. Torsional Pendulum.
3. Einstein’s A & B co-efficient.
1.Homojunction Semiconductor
LASER.
Batch 2 Seminar 2. Heterojunction Semiconductor
LASER.
1.Stress – Strain diagram.
Batch 3 PPT
2.I-Shape Girders.
Assignment: 2
Mode of
Batch Register Total Assignment
Topics
Details Number Number MCQ/Semi
nar/PPT
1.Bimetallic Strips
Batch 1 Seminar 2. A Particle enclosed in a one
dimensional potential Box.
1.Black body Radiation.
Batch 2 PPT 2. STM- Scanning Tunneling
Microscope.
1.Schroedinger Time dependent and
Time Independent wave equation.
2.Thermal conductivity – Forbe’s
Batch 3 MCQ
Method.
3. Thermal conductivity – Lee’s disc
Method.
Assignment: 3
Mode of
Batch Register Total Assignment
Topics
Details Number Number MCQ/Semi
nar/PPT
Batch 1 PPT Crystal Systems (seven types)
Batch 2 MCQ 1.SC,BCC,FCC Structure.
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DSEC / S&H (Physics) / PH8151 / I / I
2. HCP Structure.
1.Bridgman Technique.
Batch 3 Seminar
2.Czochralski Method.
SIM Questions:
1. Derive an expression for twisting couple per unit twist for a rigid wire which is
fixed at one end and other end is twisted. (may-2019)
2. Define torsional pendulum. Derive an expression for rigidity modulus of disc.
(2017, jan-2018, 2019, may-2019,jan-2013)
3. Derive an expression for internal couple moment of a rectangular and circular
beam.(jan-2012)
4. What is cantilever? Obtain an expression for the depression of a bar, when one
end is loaded and other end is fixed. How the Young’s modulus determined
experimentally?(jan-2018,jan-2013,jan,may-2012,jan-2014)
5. Obtain an expression for Young’s modulus when load is added at both sides of
beam. Also determine the Young’s modulus of the beam using this method.(jan-
2011,2017)
SIM 1
6. Compare uniform and non-uniform bending method. (jan-2011,jan-2019)
7. For atomic transitions, derive the Einstein’s A and B coefficients. (jan-2019,
may-2019)
8. With necessary energy level diagram, explain the working of homo junction
semiconductor laser.(jan-2011,2012, 2017, jan-2018)
9. With necessary energy level diagram, explain the working of hetero junction
semiconductor laser.(jan-2018)
10. Explain propagation of light through optical fiber. Hence deduce acceptance
angle and numerical aperture.(jan-2018, may-2019)
11. Explain in detail various types of optical fibers.(jan-2009,2011,dec-2012)
12. With neat diagram explain the pressure sensor and displacement sensor. (Nov-
2012,jan-2013,2017,jan-2019)
SIM 2 1. Explain the working of thermostat and bimetallic strip thermometer.(jan-2018)
2. Describe the Lee’s disc method to find the co-efficient of thermal conductivity
of poor conductor.(dec-2011,jan-2014, 2017,jan-2018, may-2019)
3. Derive an expression for coefficient of thermal conductivity of long metal rod.
(jan-2019)
4. Obtain the expression for heat conduction per second when heat energy is
passed through two slabs.( 2017)
5. How heat exchangers are used in solar water heater and refrigerator? (jan-
2018,2019)
6. With necessary diagram explain principle and working of μ-wave oven. Write
its advantages and disadvantages. (jan-2018)
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DSEC / S&H (Physics) / PH8151 / I / I
7. Derive Planck’s quantum theory for black body radiation and hence deduces
Wien’s law and Rayleigh Jean’s law. (2017,jan-2019, may-2019)
8. What is Compton effect? Give the theory of Compton effect and Show that
h
Compton shift, d (1 cos )
m0 c (jan-2018)
9. With a neat sketch, explain the Forbe’s method of thermal conductivity
determination.( dec-2005,(jan-2019, may-2019)
10. Derive the Schrodinger time independent and Schrodinger time dependent wave
equation .(jan-2018,2019)
11. Describe the Eigen energy value and Eigen function from Schrodinger wave
equation.( 2017,may-2019)
12. With neat diagram, explain the working for Scanning Tunneling Microscope.
(jan-2019)
SIM 3 1. What is Miller indices.What are procedures followed to find Miller indices and
also mention its application. (jan-2019)
2. Derive an expression for the interplanar spacing for (hkl) planes of a cubic
structure.( 2017)
3. Explain atomic radius and APF for BCC and SC system.( 2017,jan-2018)
4. Explain about lattice parameters of Face Centred Cubic system. (2017,jan-2018)
5. Find out c/a ration and APD value for HCP structures. (jan-2011,jan-2018,2019,
may-2019)
6. Prove that the packing density for FCC and HCP are same.(jan-
2011,2013,2010)
7. With necessary diagram, explain in detail the Czochralski melt growth
technique. (2017,jan-2018,2019, may-2019)
8. With necessary diagram, explain in detail the Bridgmann melt growth
technique.(dec-2014,jan-2014 may-2019)
9. Explain various crystal system with neat diagrams.(jan-2010,2011,2016,jan-
2019)
10. Write short notes on Crystal imperfection and its advantages.(jan-2016, may-
2019)
11. Write a note on Point and line imperfections in crystals.(jan-2009,2010,2018)
12. Discuss in detail a suitable method to grow single crystal of semiconducting
material.(jan-2016,2019)
Submission Details:
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DSEC / S&H (Physics) / PH8151 / I / I
CSE-A: 6gjzk5v
Prepared By Verified By
(A.RAVIKUMAR /AP)
Approved By
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