WFF5N60B Product Description

Silicon N-Channel MOSFET

Features D
� 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V
� Ultra-low Gate charge(Typical 15nC)
� Fast Switching Capability
� 100%Avalanche Tested G
� Maximum Junction Temperature Range(150℃)

General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology.this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche \ characteristics .This devices is specially well suited for
half bridge and full bridge resonant topology line a electronic lamp
ballast, high efficiency switched mode power supplies, active power
factor correction.

Absolute Maximum Ratings

Symbol Parameter Value Units
VDSS Drain Source Voltage 600 V
Continuous Drain Current(@Tc=25℃) 4.5* A
ID
Continuous Drain Current(@Tc=100℃) 3.1* A

IDM Drain Current Pulsed (Note1) 16* A

VGS Gate to Source Voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note2) 240 mJ
EAR Repetitive Avalanche Energy (Note1) 10 mJ

dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ns

Total Power Dissipation(@Tc=25℃) 30 W

PD
Derating Factor above 25℃ 0.23 W/℃

TJ,Tstg Junction and Storage Temperature -55~150 ℃

TL Channel Temperature 300 ℃

*Drain current limited by junction temperature

Thermal Characteristics
Value
Symbol Parameter Units
Min Typ Max
RQJC Thermal Resistance , Junction -to -Case - - 4.16 ℃/W

RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W

WT-F046-Rev.A1 Sep.2013
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WFF5N60B Product Description
Silicon N-Channel MOSFET

Electrical Characteristics(Tc=25℃)
Characteristics Symbol Test Condition Min Type Max Unit
Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA

Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V

VDS=600V,VGS=0V - - 10 µA
Drain Cut -off current IDSS
VDS=480V,Tc=125℃ - - 100 µA

Breakdown voltage Temperature coefficient △BVDSS/△TJ ID=250 µA,Referenced to 25℃ - 0.6 - V/℃

Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 600 - - V

Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V

Drain -source ON resistance RDS(ON) VGS=10V,ID=2.25A - 2.0 2.4 Ω

Forward Transconductance gfs VDS=50V,ID=2.25A - 4.0 - S

Input capacitance Ciss VDS=25V, - 490 642

Reverse transfer capacitance Crss VGS=0V, - 9 12 pF

Output capacitance Coss f=1MHz - 95 124

Turn-on Rise time tr VDD=300V, - 49 111

Turn-on delay time Td(on) ID=4.5A - 16 42

Switching time ns
Turn-off Fall time tf RG=25Ω - 37 84

Turn-off delay time Td(off) (Note4,5) - 46 102

Total gate charge(gate-source VDD=480V,

Qg - 15 20
plus gate-drain) VGS=10V,
nC
Gate-source charge Qgs ID=4.5A - 3.4 -

Gate-drain("miller") Charge Qgd (Note,5) - 5 -

Source-Drain Ratings and Characteristics(Ta=25℃)

Characteristics Symbol Test Condition Min Type Max Unit
Continuous drain reverse current IDR - - - 4.5 A

Pulse drain reverse current IDRP - - - 17.6 A

Forward voltage(diode) VDSF IDR=4.5A,VGS=0V - - 1.4 V

Reverse recovery time trr IDR=4.5A,VGS=0V, - 330 - ns

Reverse recovery charge Qrr dIDR /dt =100 A /µs - 2.67 - µC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=25mH IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution

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 WFF5N60B Product Description
Silicon N-Channel MOSFET

VG S
10
10 To p 15V
10V
8V
7V
6. 5 V
6V 150。C

I D[A]
5. 5 V
B o tto m 5V
I D[A]

。
25 C

Notes:
1 Notes: 1.250us pulse test
1.250us pulse test 。
2.Tc=40 C
。
2.Tc=25 C
0 .1

10
2 4 5 6 10
VD S [V ] V G S [V]

Fig.1 On-Region characteristics Fig.2 Transfer Current characteristics

10
2 .4
R DS (on)[ Ω ]

2 .2

2 .0
VG S =10V
。
I DR[A]

25 C
1
1 .8
。
150 C
1 .6

Notes:
1 .4 。 1.250us pulse test
Note:T=25 C
2.V G S =0V
VG S =20V
1 .2 0 .1
0 1 2 3 4 5 6 0 .4 0 .5 0 .6 0 .7 0 .8 0 .9 1 .0 1 .1 1 .2 1 .3
I D[A] V S D [V]

Fig.3 On-Resistance Variation vs Drain Fig.4 Body Diode Forward Voltage

Current and Gate Voltage Variation with Source Current
and Temperature

8 X 1 02 12
Ciss=Cgs+Cgd(Cds=shorted) VD S =480V
Coss=Cds+Cgd 10
Crss=Cgd VD S =300V
V GS Gate source Voltage[V]

6 X 1 02
Capacitance[pF]

VD S =120V
8

4 X 1 02 6

2 X 1 02
2

0 .0 0
0 2 4 6 8 10 12 14
1 0 -1 100 101
V D S Drain-Source Voltage[V] Qg Toltal Gate Charge[nC]

Fig.5 Capacitance Characteristics Fig.6 Gate Charge Characteristics

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 WFF5N60B Product Description
Silicon N-Channel MOSFET

1 .1 5 3 .0

1 .1 0 2 .5

BDS(on) (Normalized)
BV DSS (Normalized)

2 .0
1 .0 5

1 .5
1 .0 0

1 .0
0 .9 5
Notes: Notes:
1.V G S =0V 0 .5 1.V G S =10V
0 .9 0 2.I D=250uA 2.I D=2.0A
0 .0
-7 5 -5 0 -2 5 0 25 50 75 100 125 150 -7 5 -5 0 -2 5 0 25 50 75 100 125 150
T j[。
C ] T j[ 。
C ]

Fig.7 Breakdown Voltage Variation Fig.8 On-Resistance Variation vs.

vs.Temperature Temperature
2
10 5
Operation in T his Area
is Lim ited by R D S ( on)

4
101 100us
1m s

10m s 3
I D [A]

DC
100
ID[A]

1 0 -1
Notes: 1
1.Tc=25。 C
2 .T J=25 。
C
3.Single pulse

1 0 -2 0
25 50 75 100 125 150
100 101 102 103
。
Tc [ C ]
VD S [V]

Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs

Case Temperature
ZθJC (t),Thermal Response

D= 0.5
100
0 .2
*Notes:
0 .1 。
1.ZθJ C (t)=2.5 C/W Max.
2.Duty Factor,D=t1/t2
0.05 3.T JM *T C =PDM * ZθJ C (t)
-1
10 0.02 PD M
0.01
t1
t2
single pulse

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 100 101
t 1 ,Square Wave Pulse Duration[sec]
Fig.11 Transient Thermal Response Curve
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WFF5N60B Product Description
Silicon N-Channel MOSFET

Same type VG S
50K Ω as D U T
Qg
12V 200nF
300nF 10V

VG S VD S
Qg s Qg d

DUT
3m A

Ch a rg e

Fig.12 Gate Test Circuit & Waveform

RL VD S
VD S 90%

VD D
VG S
RG

10%
VG S
10V DUT
td(on) tr td(off) tf
to n to f f

Fig.13 Resistive Switching Test Circuit & Waveform

L 1 B V DSS
VD S EA S = L IA S 2
2 B V D S S - VD D

B V DSS
ID
IA S
RG
VD D I D( t)

10V DUT VD S( t )
VD D
tp
tp Tim e

Fig.14 Unclamped Inductive Switching Test Circuit & Waveform

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WFF5N60B Product Description
Silicon N-Channel MOSFET

DUT

VD S

IS D
L

Driver
RG
S am e Type
as DUT VD D

VG S
dv/dt controlled by RG
IS D conteolled by pulse period

VG S Gate Pulse Width

D =
Gate Pulse Period 10V
(Driver)

IF M ,Body Diode Forward Current

IS D
(DUT) di/dt

IR M

Body Diode Reverse Current

VD S
(DUT) Body Diode Recovery dv/dt

VS D VD D

Body Diode
Forward Voltage Drop

Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform

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WFF5N60B Product Description
Silicon N-Channel MOSFET

TO-220F Package Dimension

U n it:m m

E F
符 号 M IN M AX
Q Symbol

A 4 .5 4 .9

P B - 1 .4 7

b 0 .7 0 .9
D

c 0 .4 5 0 .6

D 1 5 .6 7 1 6 .0 7

E 9 .9 6 1 0 .3 6

e 2.54T YPE
L2

B
F 2 .3 4 2 .7 4

L 1 2 .5 8 1 3 .3 8
L

b L2 3 .1 3 3 .3 3
C
ФP 3 .0 8 3 .2 8
Q1
Q 3 .2 3 .4

e e Q1 2 .5 6 2 .9 6
A

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WFF5N60B Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.

CONTACT:
Winsemi Microelectronics Co., Ltd.

ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com

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