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Laboratorio de Fuerzas y Túnel

Frontiers of SPM, 5 Oct. 2006

The nanomechanics of
Compositional Mapping by
Amplitude Modulation AFM
Outline

i). Forces and molecular resolution

ii). The physics of phase Imaging:


elastic vs. Inelastic processes

iii). Identification of energy dissipation


Quantitative information

iv). Enhancing Force Sensitivity: Beyond


1st mode Imaging

v). Summary
Ricardo García
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel
a

10 nm

8 nm GroEL in liquid, T. Ando et al. PNAS 98, 12468 (2001)

PM in liquid, D.J. Muller et al.


Biophys. J. 77, 1150 (1999)

50 nm

IgG, SanPaulo, Garcia, Biophys.


J. 78, 1599 (2000)

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

Forces and Resolution in AM-AFM (biomolecules)


verified values

Medium Force (pN) Force Resolution*


sensitivity (nm)
Air IgG 300 0.1 3

Liquid 1 PM 100 0.05 1.1


crystal
Liquid 2 No available No available 2
GroEL patches

Some forces in molecular biology


Process Force (pN) length scale
DNA entropic 0.01-10 0.8 L
elasticity
DNA intrinsic 10-70 0.8-1 L
elasticity
Protein 15-50 3-5 nm
unfolding
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel

Amplitude modulation AFM (AM-AFM)


amplitude, phase-shift and resonance frequency

Free amplitude
tip’s oscillation

External excitation

φ
A= constant
Phase Image 20º
Topography

500 nm

500 nm

Surf. Sci. Rep. 47, 197 (2002)

Instituto de Microelectrónica de Madrid


Resonance Curves
Free oscillating tip (10 nm ) Interacting tip (10 nm size )

Mechanics of vibrating
nanosystems:
Coexistence of oscillation SIMULATION
states: Bi-stability R= 10 nm, A0=10 nm, zc=8 nm,

ω/ω0
E=1 GPa, k=40 N/m, f0=325
kHz
AS Paulo, R García, PRB 66, 041406(R) (2002)
18
Exps.

Amplitude (nm)
simulations 15 L

12 H
10 (a)

Amplitude (nm)
9
8
H and L states have 6 6

different properties 4 6 9 12 15 18 21 24
z piezo displacement (nm)
2 High amplitude solution
0 Low amplitude solution 40 nm
1.0 (b)

<Fint> (nN) 0.5

0.0

-0.5

-1.0

(c)
1.0
Contact time

0.5
Simulation data: R=20 nm 180
f0=350 kHz, Q=400, H

Phase (deg)
135
H=6.4x10-20, E*=1.52 GPa 0.0
0 2 4 6 8 10 12 90
Tip-surface separation (nm)
45
Garcia, San Paulo, PRB 61, R13381 (2000);
Garcia, Pérez, Surf. Sci. Rep. 47, 197 (2002) 0
Laboratorio de Fuerzas y Túnel

Phase Imaging
The dynamic response of the cantilever is modified by the
tip-surface interactions

Driving signal:F(t) = F0cos(wt)

Instituto de Microelectrónica de Madrid


Topography Phase Image

1 μm

Wood pulp fiber, D.A. Chernoff (1995)

b
c

2 μm 2 μm

S. Typhimurium cells, R. Acvi, Biophys. J. (2006)


a

10 nm

GroEL in liquid, T. Ando et al. PNAS 98, 12468 (2001)


Polymers: Morphology and Structure
Topography Phase Image

Polymer morphology and structure as a


function of temperature. Hydrogenated diblock
copolymer (PEO-PB). Crystallisation of PEO
blocks occurs individually for each sphere
(light are crystalline, dark amorphous). Reiter
et al., Phys. Rev. Lett. 87, 2261 (2001)
Phase Image,
size 1μm2
Sources of Phase Imaging Contrast
TOPOGRAPHIC EFFECTS

ELASTIC TAPPING ↔ NON CONTACT


CONTRIBUTIONS TRANSITIONS

YOUNG MODULUS
(In presence of dissipative channels)

PHASE
CONTRAST
VISCOELASTICITY

ADHESION HYSTERESIS
INELASTIC
CONTRIBUTIONS CAPILLARY FORCES

HIDROPHILIC/HIDROPHOBIC
INTERACTIONS
Laboratorio de Fuerzas y Túnel

Phase shift and tip-surface interactions


Attractive regime (L
180 Repulsive regime (H
branch) branch)

Phase (deg)
135
90
45
0
separation
The virial theorem applied to the tip allows to deduce
ω=ω0 and A>>z0

2Q ⎡ < Fts > 2 1 2⎛ ω 2 ⎞⎤ 2 Q < F ts · z >


cosφ = ⎢ − < Fts ·z > + kc A ⎜⎜1 − 2 ⎟⎟⎥ cos φ ≈ −
k c AA0 ⎣ kc 2 ⎝ ω 0 ⎠⎦ k c AA 0
Conservative interactions and
small contact times F ts
cos φ ≈ 2
F0
The phase shift depends on the sign
of the interaction

A Sanpaulo, R García, PRB 64, 193411 (2001)


Laboratorio de Fuerzas y Túnel

Phase shift and energy dissipation

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

How to measure dissipation in amplitude modulation AFM


steady state solution

z = z0 + A cos(ωt − φ )
Dynamic equilibrium in AM-AFM

Eext = Emed + Edis


dz
E EXT = ∫ F0 cos(ωt) dt = (1 / Q)πkA 0 A(ω)· sinϕ topography composition
dt

ωAsp=cte
⎛ mω 0 dz ⎞ dz πkωA 2 (ω )
E med = ∫ ⎜⎜ ⎟⎟ dt = A sp QE dis
sin φ =
Qω 0
⎝ Q dt ⎠ dt
+
E dis = ∫ (FTS )
dz
dt
dt ω 0 A0 π kA 0 A sp

Asp=cte.; phase shifts are linked to tip-surface inelastic interactions

A A πkA 02
Tamayo, García, APL 71, 2394 (1997)
E dis = (sinφ − )
Tamayo, García APL73, 2926 (1998) A0 A0 Q
Laboratorio de Fuerzas y Túnel

A A πkA 2

E dis = (sin φ − ) 0

A0 A0 Q
Numerical simulations
analytical expression
1.0

0.8
Edis (eV)

0.6

0.4

0.2

0.0
0.2 0.4 0.6 0.8 1.0
A/Ao

2z mω dz
m d = −kz + 0 + F + F cosωt Fixed by the observer A0,Q,k,ω0, ω
dt 2 Q dt ts 0
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel

From Phase shifts to energy dissipation

A A πkA 02
E dis = (sinφ − )
A0 A0 Q
180
Ao=32.5 nm
10
160 Ao = 23.4 nm attractive
140 regime (low 8 Ao=26.6 nm

Edis per cycle (eV)


Ao = 26.6 nm amplitude)
Phase shift (deg)

120 Ao = 6.6 nm
6
100
Ao=23.4 nm

80
4
60

40 Ao = 32.5 nm 2
Ao=6.6 nm
20
repulsive 0
0 regime (high
10 15 20 25 30 35ampl.)40 45
0,0 0,2 0,4 0,6 0,8 1,0
Z piezo displacement (nm)
A/A
o

Martinez, Garcia, Nanotechnology 17, S167 (2006)

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

12 (b) A ttractive
11
Repulsive
10
9
E dis per cycle (eV)

A 0=23.4 nm
8
7
6
5
4
3
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0
A /A 0

The dissipated energy is higher on the repulsive regime


Dissipation avoids artefacts due to regime changes of contrast

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

Applications of Phase Imaging

Identification of Nanoscale dissipation Processes

Instituto de Microelectrónica de Madrid


Dissipation at the Nanoscale:
Surface Adhesion Hysteresis
Short range Long range

Edis = ∫ Fdz=4πRδ (γ r −γ a ) α 1 1
2
Edis = ∫ 2
dz =Δα ( − )
z d1 d2
5

F (nN)
0
F (nN)

-2 F
0
-4

-6

-5
-8
-0.05 0.00 0.05 0.10 0 1

d (nm) d (nm)
A0 = 6.6 nm, E=150GPa, Zc =3 nm. ΔH=2.5 Ei=20mJ/m2. Ev=40 mJ/m2
A0 = 40 nm, E=150GPa, Zc =20 nm; ΔH=1

α
Ei=33mJ/m2; Ev=66 mJ/m2; k=2N/m, Q=150

FDMT = Y R δ − 4πRγ
* 1/ 2 3/ 2
F LR = − 2
z
Dissipation at the Nanoscale:
viscoelasticity
2

0
F (nN)
-1
dissipa
-2
tion
-3

-4

-5

-6
-1 0 1 2

d (nm)
A0 = 15 nm, η= 500 Pa.s; E=500MPa; Zc =6.5 nm


F =η Rδ
v dt
Tamayo, Garcia, Langmuir 12, 4430 (1996)
Laboratorio de Fuerzas y Túnel

Red: viscosity
Blue: long range adhesion hysteresis
6
Black: short range ad. hystersis (b)
4
1.0 (a)

δ E*dis / δ (A/A0)
Normalized Dissipation

0.8 2

0.6 0
0.4
-2
0.2
-4
0.0
0.0 0.2 0.4 0.6 0.8 1.0
Amplitude Ratio (A/A0) -6
0.0 0.2 0.4 0.6 0.8 1.0
Amplitude Ratio (A/A0)

The derivative of the dissipative energy singles out the dissipative process
Analogy: Tersoff-Hamann theory of STM
dI
G≡ ∝ ρ Sample (EF + eV)× ρTip (EF ) × T(eV,z,φp )
dV
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel

Identification of dissipation mechanisms


Long range dissipation adhesion hysteresis viscoelasticity

1.0 (a) 10 (b) 30 (c)

0.8 8
Dissipation (eV)

blue: exps. 20
0.6 6
black: theory 0.4 4
10
0.2 50n 2 50n 500 nm
m m

0.0
1.0 1
Experiment
(d) Simulation (e) (f)
0.5
δ E*Dis / δ (A/A0)

0
0.0

-0.5
-1
-1.0
0.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0

A /A0

Garcia, Gomez, Martinez, Patil, Dietz, Magerle, Phys. Rev. Lett. 97, 016103 (2006).

Instituto de Microelectrónica de Madrid


20
H.A. (continous) Point-mass model
amplitude (nm)

L.A. (continous)
15 H.A. (point-mass)
L.A. (pont-mass) 1
(a)
low amplitude
10

normalized amplitude
10-4
5 0
0 2 4 6 8 10 12
0
1x10
0 high amplitude
(b)
0 5 10 15 20
-4
tip-sample distance (nm) 8x10
-4
4x10
0
0 2 4 6 8 10 12

frequency (normalized to 350.6 kHz)

Continuous model
1
normalized amplitude

low amplitude (a)

10-4
0
0 2 4 6 8 10 12

50 μm 1 high amplitude (b)

10-4
LA
15 0
0 2 4 6 8 10 12
0
frequency (normalized to 350.6 kHz)
) (nm)

-15
The components of higher order modes and harmonics are several
HA
15
orders of magnitude smaller than the fundamental
w ( x=1,t

-15 Rodríguez and García, Appl. Phys. Lett. 80, 1646 (2002)

0 time ( μ s) 15
Laboratorio de Fuerzas y Túnel
Forces and Molecular Resolution in AM-AFM
2

F (nN)
0
F (nN)

-2

0
-4

-6

-5
-8
-0.05 0.00 0.05 0.10 0 1

d (nm) d (nm)
Some forces in molecular biology
Process Force (pN) length scale
DNA entropic 0.01-10 0.8 L
elasticity
DNA intrinsic 10-70 0.8-1 L
elasticity
Protein unfolding 15-50 3-5 nm

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

Improving force sensitivity

Beyond 1st mode Imaging

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

EI ∂ 4 ⎡ ∂w 2 ( x , t ) ⎤ ∂w 2 ( x , t )
⎢w ( x, t ) + a ⎥ + μbh = Forces
L4 ∂x 4 ⎢⎣ 1 ∂t 2 ⎥
⎦ ∂ t 2

Instituto de Microelectrónica de Madrid


ForceTool

Multipurpose Force Tool for Quantitative Nanoscale Analysis and


Manipulation of Biomolecular, Polymeric and Heterogeneous Materials

ForceTool

CSIC, CNR (F. Biscarini) , Utwente (J. Vancso) , Ludwig-Maximilians-


Universität (R. Stark), Chemnitz University of Technology (R. Magerle) ,
Universidad Autónoma de Madrid (R. Pérez), Nanoworld (C. Ritchter ) ,
Johannes-Kepler University (P. Hinterdorfer) , Electrónica y Diseño
Aguado (I. Rodriguez)
ForceTool : NMP4-CT-2004-013684

ForceTool AFM
Non-linear dynamics Nanomechanics, material design
Laboratorio de Fuerzas y Túnel

ForceTool AFM

display
AFM controller

A1 A2 φ1 φ2

Fi cos ωit + Fj cos ωjt

Z scanner Feedback

Patents: PCT/ES 2006/070016; PCT/ES 2006/070096


ForceTool: Proposal submitted: 12 May 2004; final: 28 October 2004;
Project started: 1 February 2005

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

Tapping mode versus ForceTool phase shift

Sexithiophene on Si(100)

Phase Shift (º)


Si T6 Si

P h a s e S h ift (º)
23
Si T6 Si
2
Tapping mode PHASE SHIFT 1
1
00
-1- 1 Δφ1 = 0.1 º Δφ1
-2 Δφ2 = 0.9 º Δφ1
-2- 3 Δφ2
0 200 Δφ6 020=9Δφ
400 800 1000 1200
1 1400
SXe c(nm)
tio n (n m )
-3
0 200 400 600 800 1000 1200 1400
Section
X (nm) (nm)
ForceTool Phase shift
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel
Tapping mode vs. ForceTool mode
DB-TTF

topography

Tapping mode
phase shift

ForceTool Δφ1 = 0.1 º


Phase shift Δφ2 = -1.3 º Δφ2 =13 Δφ1
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel

Two routes to compositional contrast: Conservative and non-


conservative processes.

Phase Imaging
Application 1: Identification of nanoscale energy dissipation
processes
Application 2: Measurement of material properties

The 3D character of the microcantilever allows to develop


methods based on elastic processes. ForceTool Sensitivy is
100 times higher than in AM-AFM.

Instituto de Microelectrónica de Madrid


Laboratorio de Fuerzas y Túnel

Agradecimientos

Prof. Ricardo Dr. Shiva Patil


Nicolás F. Carlos
García Martínez Gómez

Thank you for your attention!


+José L. Lozano
+Elena Tomás

Financiación
Programa Nacional de Materiales, MEC; CAM
European Commission: ForceTool

Instituto de Microelectrónica de Madrid

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