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The nanomechanics of
Compositional Mapping by
Amplitude Modulation AFM
Outline
v). Summary
Ricardo García
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel
a
10 nm
50 nm
Free amplitude
tip’s oscillation
External excitation
φ
A= constant
Phase Image 20º
Topography
500 nm
500 nm
Mechanics of vibrating
nanosystems:
Coexistence of oscillation SIMULATION
states: Bi-stability R= 10 nm, A0=10 nm, zc=8 nm,
ω/ω0
E=1 GPa, k=40 N/m, f0=325
kHz
AS Paulo, R García, PRB 66, 041406(R) (2002)
18
Exps.
Amplitude (nm)
simulations 15 L
12 H
10 (a)
Amplitude (nm)
9
8
H and L states have 6 6
different properties 4 6 9 12 15 18 21 24
z piezo displacement (nm)
2 High amplitude solution
0 Low amplitude solution 40 nm
1.0 (b)
0.0
-0.5
-1.0
(c)
1.0
Contact time
0.5
Simulation data: R=20 nm 180
f0=350 kHz, Q=400, H
Phase (deg)
135
H=6.4x10-20, E*=1.52 GPa 0.0
0 2 4 6 8 10 12 90
Tip-surface separation (nm)
45
Garcia, San Paulo, PRB 61, R13381 (2000);
Garcia, Pérez, Surf. Sci. Rep. 47, 197 (2002) 0
Laboratorio de Fuerzas y Túnel
Phase Imaging
The dynamic response of the cantilever is modified by the
tip-surface interactions
1 μm
b
c
2 μm 2 μm
10 nm
YOUNG MODULUS
(In presence of dissipative channels)
PHASE
CONTRAST
VISCOELASTICITY
ADHESION HYSTERESIS
INELASTIC
CONTRIBUTIONS CAPILLARY FORCES
HIDROPHILIC/HIDROPHOBIC
INTERACTIONS
Laboratorio de Fuerzas y Túnel
Phase (deg)
135
90
45
0
separation
The virial theorem applied to the tip allows to deduce
ω=ω0 and A>>z0
z = z0 + A cos(ωt − φ )
Dynamic equilibrium in AM-AFM
ωAsp=cte
⎛ mω 0 dz ⎞ dz πkωA 2 (ω )
E med = ∫ ⎜⎜ ⎟⎟ dt = A sp QE dis
sin φ =
Qω 0
⎝ Q dt ⎠ dt
+
E dis = ∫ (FTS )
dz
dt
dt ω 0 A0 π kA 0 A sp
A A πkA 02
Tamayo, García, APL 71, 2394 (1997)
E dis = (sinφ − )
Tamayo, García APL73, 2926 (1998) A0 A0 Q
Laboratorio de Fuerzas y Túnel
A A πkA 2
E dis = (sin φ − ) 0
A0 A0 Q
Numerical simulations
analytical expression
1.0
0.8
Edis (eV)
0.6
0.4
0.2
0.0
0.2 0.4 0.6 0.8 1.0
A/Ao
2z mω dz
m d = −kz + 0 + F + F cosωt Fixed by the observer A0,Q,k,ω0, ω
dt 2 Q dt ts 0
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel
A A πkA 02
E dis = (sinφ − )
A0 A0 Q
180
Ao=32.5 nm
10
160 Ao = 23.4 nm attractive
140 regime (low 8 Ao=26.6 nm
120 Ao = 6.6 nm
6
100
Ao=23.4 nm
80
4
60
40 Ao = 32.5 nm 2
Ao=6.6 nm
20
repulsive 0
0 regime (high
10 15 20 25 30 35ampl.)40 45
0,0 0,2 0,4 0,6 0,8 1,0
Z piezo displacement (nm)
A/A
o
12 (b) A ttractive
11
Repulsive
10
9
E dis per cycle (eV)
A 0=23.4 nm
8
7
6
5
4
3
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0
A /A 0
Edis = ∫ Fdz=4πRδ (γ r −γ a ) α 1 1
2
Edis = ∫ 2
dz =Δα ( − )
z d1 d2
5
F (nN)
0
F (nN)
-2 F
0
-4
-6
-5
-8
-0.05 0.00 0.05 0.10 0 1
d (nm) d (nm)
A0 = 6.6 nm, E=150GPa, Zc =3 nm. ΔH=2.5 Ei=20mJ/m2. Ev=40 mJ/m2
A0 = 40 nm, E=150GPa, Zc =20 nm; ΔH=1
α
Ei=33mJ/m2; Ev=66 mJ/m2; k=2N/m, Q=150
FDMT = Y R δ − 4πRγ
* 1/ 2 3/ 2
F LR = − 2
z
Dissipation at the Nanoscale:
viscoelasticity
2
0
F (nN)
-1
dissipa
-2
tion
-3
-4
-5
-6
-1 0 1 2
d (nm)
A0 = 15 nm, η= 500 Pa.s; E=500MPa; Zc =6.5 nm
dδ
F =η Rδ
v dt
Tamayo, Garcia, Langmuir 12, 4430 (1996)
Laboratorio de Fuerzas y Túnel
Red: viscosity
Blue: long range adhesion hysteresis
6
Black: short range ad. hystersis (b)
4
1.0 (a)
δ E*dis / δ (A/A0)
Normalized Dissipation
0.8 2
0.6 0
0.4
-2
0.2
-4
0.0
0.0 0.2 0.4 0.6 0.8 1.0
Amplitude Ratio (A/A0) -6
0.0 0.2 0.4 0.6 0.8 1.0
Amplitude Ratio (A/A0)
The derivative of the dissipative energy singles out the dissipative process
Analogy: Tersoff-Hamann theory of STM
dI
G≡ ∝ ρ Sample (EF + eV)× ρTip (EF ) × T(eV,z,φp )
dV
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel
0.8 8
Dissipation (eV)
blue: exps. 20
0.6 6
black: theory 0.4 4
10
0.2 50n 2 50n 500 nm
m m
0.0
1.0 1
Experiment
(d) Simulation (e) (f)
0.5
δ E*Dis / δ (A/A0)
0
0.0
-0.5
-1
-1.0
0.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0
A /A0
Garcia, Gomez, Martinez, Patil, Dietz, Magerle, Phys. Rev. Lett. 97, 016103 (2006).
L.A. (continous)
15 H.A. (point-mass)
L.A. (pont-mass) 1
(a)
low amplitude
10
normalized amplitude
10-4
5 0
0 2 4 6 8 10 12
0
1x10
0 high amplitude
(b)
0 5 10 15 20
-4
tip-sample distance (nm) 8x10
-4
4x10
0
0 2 4 6 8 10 12
Continuous model
1
normalized amplitude
10-4
0
0 2 4 6 8 10 12
10-4
LA
15 0
0 2 4 6 8 10 12
0
frequency (normalized to 350.6 kHz)
) (nm)
-15
The components of higher order modes and harmonics are several
HA
15
orders of magnitude smaller than the fundamental
w ( x=1,t
-15 Rodríguez and García, Appl. Phys. Lett. 80, 1646 (2002)
0 time ( μ s) 15
Laboratorio de Fuerzas y Túnel
Forces and Molecular Resolution in AM-AFM
2
F (nN)
0
F (nN)
-2
0
-4
-6
-5
-8
-0.05 0.00 0.05 0.10 0 1
d (nm) d (nm)
Some forces in molecular biology
Process Force (pN) length scale
DNA entropic 0.01-10 0.8 L
elasticity
DNA intrinsic 10-70 0.8-1 L
elasticity
Protein unfolding 15-50 3-5 nm
EI ∂ 4 ⎡ ∂w 2 ( x , t ) ⎤ ∂w 2 ( x , t )
⎢w ( x, t ) + a ⎥ + μbh = Forces
L4 ∂x 4 ⎢⎣ 1 ∂t 2 ⎥
⎦ ∂ t 2
ForceTool
ForceTool AFM
Non-linear dynamics Nanomechanics, material design
Laboratorio de Fuerzas y Túnel
ForceTool AFM
display
AFM controller
A1 A2 φ1 φ2
Z scanner Feedback
Sexithiophene on Si(100)
P h a s e S h ift (º)
23
Si T6 Si
2
Tapping mode PHASE SHIFT 1
1
00
-1- 1 Δφ1 = 0.1 º Δφ1
-2 Δφ2 = 0.9 º Δφ1
-2- 3 Δφ2
0 200 Δφ6 020=9Δφ
400 800 1000 1200
1 1400
SXe c(nm)
tio n (n m )
-3
0 200 400 600 800 1000 1200 1400
Section
X (nm) (nm)
ForceTool Phase shift
Instituto de Microelectrónica de Madrid
Laboratorio de Fuerzas y Túnel
Tapping mode vs. ForceTool mode
DB-TTF
topography
Tapping mode
phase shift
Phase Imaging
Application 1: Identification of nanoscale energy dissipation
processes
Application 2: Measurement of material properties
Agradecimientos
Financiación
Programa Nacional de Materiales, MEC; CAM
European Commission: ForceTool