Exhibit 3

Case 5:05-cv-00334-RMW Document 2056-4 Filed 08/14/2008 Page 1 of 13
EXHIBIT 3
1 Gregory P. Stone (State Bar No. 078329) Rollin A. Ransom (State Bar No. 196126)
Steven M. Perry (State Bar No. 106154) SIDLEY AUSTIN LLP
2 Sean Eskovitz (State Bar No. 241877) 555 West Fifth Street, Suite 4000
MUNGER, TOLLES & OLSON LLP Los Angeles, California 90013-1010
3 355 South Grand Avenue, 35th Floor Telephone: (213) 896-6000
Los Angeles, California 90071-1560 Facsimile: (213) 896-6600
4 Telephone: (213) 683-9100 Email: rransom@sidley.com
Facsimile: (213) 687-3702
5 Email: gregory.stone@mto.com; Pierre J. Hubert (Pro Hac Vice)
steven.perry@mto.com; sean.eskovitz@mto.com Craig N. Tolliver (Pro Hac Vice)
6 McKOOL SMITH PC
Peter A. Detre (State Bar No. 182619) 300 West 6th Street, Suite 1700
7 Carolyn Hoecker Luedtke (State Bar No. 207976) Austin, Texas 78701
Jennifer L. Polse (State Bar No. 219202) Telephone: (512) 692-8700
8 MUNGER, TOLLES & OLSON LLP Facsimile: (512) 692-8744
560 Mission Street, 27th Floor Email: phubert@mckoolsmith.com;
9 San Francisco, California 94105 ctolliver@mckoolsmith.com
Telephone: (415) 512-4000
10 Facsimile: (415) 512-4077
Email: peter.detre@mto.com;
11 carolyn.luedtke@mto.com; jen.polse@mto.com
12 Attorneys for RAMBUS INC.
13
14 UNITED STATES DISTRICT COURT

NORTHERN DISTRICT OF CALIFORNIA
15 SAN JOSE DIVISION
16 RAMBUS INC., ) Case No. C 05-00334 RMW
)
17 Plaintiff, ) RAMBUS INC.’S DISCLOSURE OF
vs. ) ASSERTED CLAIMS AND FINAL
18 HYNIX SEMICONDUCTOR INC., HYNIX ) INFRINGEMENT CONTENTIONS
SEMICONDUCTOR AMERICA INC., ) PURSUANT TO SCHEDULING
19 HYNIX SEMICONDUCTOR ) ORDER AND PATENT LOCAL
MANUFACTURING AMERICA INC., ) RULES
20 )
SAMSUNG ELECTRONICS CO., LTD., )
21 SAMSUNG ELECTRONICS AMERICA, )
INC., SAMSUNG SEMICONDUCTOR, )
22 INC., SAMSUNG AUSTIN )
SEMICONDUCTOR, L.P., )
23 )
NANYA TECHNOLOGY CORPORATION, )
24 NANYA TECHNOLOGY CORPORATION )
U.S.A., )
25 Defendants. )
)
26 )
)
27 )
28
Rambus Inc.’s Disclosure of Asserted Claims and Case No. C 05-00334 RMW
Final Infringement Contentions Pursuant to Case No. C 05-002298 RMW
Scheduling Order and Patent Local Rules Case No. C 06-00244 RMW
1 RAMBUS INC., ) Case No. C 05-002298 RMW

)
2 Plaintiff, )
v. )
3 SAMSUNG ELECTRONICS CO., LTD., )
SAMSUNG ELECTRONICS AMERICA, )
4 INC., SAMSUNG SEMICONDUCTOR, )
INC., SAMSUNG AUSTIN )
5 SEMICONDUCTOR, L.P., )
Defendants. )
6 )
)
7 )
)
8
RAMBUS INC., ) Case No. C 06-00244 RMW
9 )
Plaintiff, )
10 vs. )
MICRON TECHNOLOGY, INC. and )
11 MICRON SEMICONDUCTOR )
PRODUCTS, INC., )
12 Defendants. )
)
13 )
14
15 Pursuant to the Court’s July 16, 2008 Patent Trial Scheduling Order and the Patent Local
16 Rules, Plaintiff Rambus Inc. hereby makes the following infringement disclosures with respect to
17 U.S. Patent No. 6,182,184 (“the ’184 Patent”), U.S. Patent No. 6,266,285 (“the ’285 Patent”),
19 U.S. Patent No. 6,496,897 (“the ’897 Patent”), U.S. Patent No. 6,546,446 (“the ’6,446 Patent”),
21 U.S. Patent No. 6,715,020 (“the ’5,020 Patent”), U.S. Patent No. 6,751,696 (“the ’696 Patent”),
22 U.S. Patent No. 6,324,120 (“the ’120 Patent”), U.S. Patent No. 6,378,020 (“the ’8,020 Patent”),
23 U.S. Patent No. 6,426,916 (“the ’916 Patent”), U.S. Patent No. 6,452,863 (“the ’863 Patent”) and
24 U.S. Patent No. 6,038,195 (“the ’195 Patent”) (collectively “Rambus Patents”).
25 These disclosures are based on information available to Rambus at this time. The parties
26 are continuing to conduct both fact and expert discovery. Rambus reserves all rights to
27 supplement as necessary and allowed, in particular with respect to further discovery from
28 Defendants relating to accused devices. Rambus also reserves the right to assert additional claims
Final Infringement Contentions Pursuant to -1- Case No. C 05-002298 RMW
1 of the Rambus patents, accuse different products and/or devices, and/or find alternative literal
2 and/or equivalent infringing elements in Defendants’ devices, as necessary and allowed.
3 A. ASSERTED CLAIMS
4 Rambus asserts the following claims against all Defendants’ DDR3 devices1, Nanya’s
5 DDR2 devices, and Samsung’s DDR2 devices, GDDR2 devices, gDDR2 devices and GDDR3
6 devices:
7 Patent Claim(s)
8 6,182,184 14
9 6,266,285 1, 16
10 6,314,051 27, 32, 43
11 6,324,120 33
12 6,378,020 36
13 6,426,916 28
14 6,452,863 16
15 6,493,789 13
16 6,496,897 2, 16
17 6,546,446 2, 3, 4
18 6,584,037 1, 9, 34
19 6,697,295 45
20 6,751,696 4
21 In addition, Rambus asserts the following claims against Hynix’s GDDR4 devices and
22 Samsung’s GDDR4 devices:
23 Patent Claim(s)
24 6,266,285 1, 16
25 6,314,051 27, 32, 43
26 6,378,020 36
27 1
As used herein, the term “devices” includes memory devices (e.g., SDRAM, SGRAM and
28 RLDRAM II) and memory modules and other products containing any such memory devices.
1 6,493,789 13
2 6,496,897 2, 16
3 6,546,446 2, 3, 4
4 6,584,037 1, 9, 34
5 6,697,295 45
6 6,751,696 4
7 In addition, Rambus asserts the following claims against Hynix’s GDDR5 devices and
8 Samsung’s GDDR5 devices2:
9 Patent Claim(s)
10 6,266,285 1, 16
11 6,314,051 27, 43
12 6,546,446 2
13 6,584,037 1, 34
14 In addition, Rambus asserts the following claims against Micron’s DDR2 devices and
15 GDDR3 devices, and Hynix’s DDR2 devices, GDDR2 devices, gDDR2 devices, and GDDR3
16 devices:
17 Patent Claim(s)
18 6,182,184 14
19 6,266,285 1, 16
20 6,314,051 27, 32, 43
21 6,493,789 13
22 6,496,897 2, 16
23 6,546,446 2, 3, 4
24 6,584,037 1, 9, 34
25
2
26 Though Rambus is continuing to seek discovery regarding GDDR5 devices, including by a
motion to compel, and its investigation is not yet complete, Rambus is informed and believes, and
27 on that basis alleges, that the accused GDDR5 devices infringe at least the listed patent claims.
Rambus intends to supplement its infringement contentions in light of further discovery and as
28 otherwise appropriate.
1 6,697,295 45
2 6,751,696 4
3 In addition, Rambus asserts the following claims against Micron’s RLDRAM II devices:
4 Patent Claim(s)
5 6,314,051 27, 32, 43
6 6,496,897 2, 16
7 6,584,037 1, 9
8 6,697,295 45
9 6,751,696 4
10 In addition, Rambus asserts the following claims against Nanya’s DDR devices:
11 Patent Claim(s)
12 6,324,120 33
13 6,378,020 36
14 6,426,916 28
15 6,452,863 16
16 In addition, Rambus asserts the following claims against Nanya’s SDR-SDRAM devices:
17 Patent Claim(s)
18 6,324,120 33
19 6,426,916 28
20 6,452,863 16
21 In addition, Rambus asserts the following claims against Samsung’s DDR devices and
22 DDR-SGRAM (GDDR) devices:
23 Patent Claim(s)
24 6,038,195 1
25 6,324,120 33
26 6,378,020 36
27 6,426,916 28
28 6,452,863 16
1 In addition, Rambus asserts the following claims against Samsung’s SDR-SDRAM

2 devices, SDR-SGRAM devices, Mobile-SDRAM devices and Mobile-DDR-SDRAM devices:
3 Patent Claim(s)
4 6,038,195 1
5 6,324,120 33
6 6,426,916 28
7 6,452,863 16
8 In addition, Rambus asserts the following claims against Samsung’s and Micron’s
9 memory controllers capable of interfacing with and/or controlling any SDR-SDRAM, Mobile-
10 SDRAM or SDR-SGRAM memory device, and products containing any such memory controller:
11 Patent Claim(s)
12 6,715,020 1, 2
13 In addition, Rambus asserts the following claims against Samsung’s and Micron’s
14 memory controllers capable of interfacing with and/or controlling any DDR SDRAM, Mobile-
15 DDR-SDRAM, DDR SGRAM (GDDR SDRAM), DDR2 SDRAM, GDDR2 SDRAM, gDDR2
16 SDRAM, GDDR3 SDRAM, RLDRAM II or DDR3 SDRAM memory device, and products
17 containing any such memory controller:
18 Patent Claim(s)
19 6,715,020 1, 2, 14
20 The foregoing lists are not comprehensive lists of the claims infringed by Defendants, but
21 are limited pursuant to the Court’s direction that the number of asserted claims in these cases be
22 limited to no more than 25 at this time. Rambus reserves the right to seek leave of court to add,
23 delete, substitute, or otherwise amend this list of asserted claims in light of further discovery, the
24 Court’s claim construction or other circumstances.
25 B. ACCUSED DEVICES AND METHODS
26 Rambus is currently aware of the accused device product numbers listed in Exhibits A - D
27 attached hereto. The accused devices include at least the following memory devices (as well as
28
1 memory modules and other products containing any of the memory devices):
2 Hynix’s DDR2 SDRAM devices, Hynix’s gDDR2 SDRAM devices, Hynix’s GDDR2
3 SDRAM devices, Hynix’s DDR3 SDRAM devices, Hynix’s GDDR3 SDRAM devices, Hynix’s
4 GDDR4 SDRAM devices, Hynix’s GDDR5 SDRAM devices,
5 Samsung’s SDR-SDRAM devices, Samsung’s Mobile-SDRAM devices, Samsung’s
6 SDR-SGRAM devices, Samsung’s DDR SDRAM devices, Samsung’s Mobile-DDR-SDRAM
7 devices, Samsung’s DDR SGRAM (GDDR SDRAM) devices, Samsung’s DDR2 SDRAM
8 devices, Samsung’s gDDR2 SDRAM devices, Samsung’s GDDR2 SDRAM devices, Samsung’s
9 DDR3 SDRAM devices, Samsung’s GDDR3 SDRAM devices, Samsung’s GDDR4 SDRAM
10 devices, Samsung’s GDDR5 SDRAM devices,
11 Nanya’s SDR-SDRAM devices, Nanya’s DDR SDRAM devices, Nanya’s DDR2
12 SDRAM devices, Nanya’s DDR3 SDRAM devices,
13 Micron’s DDR2 SDRAM devices, Micron’s DDR3 SDRAM devices, Micron’s GDDR3
14 SDRAM devices, and Micron’s RLDRAM II devices.
15 The accused devices also include at least the following memory controllers (as well as
16 products containing any of the memory controllers):
17 Samsung’s memory controllers capable of interfacing with and/or controlling any SDR-
18 SDRAM, Mobile-SDRAM or SDR-SGRAM, DDR SDRAM, Mobile-DDR-SDRAM, DDR
19 SGRAM (GDDR SDRAM), DDR2 SDRAM, GDDR2 SDRAM, gDDR2 SDRAM, GDDR3
20 SDRAM, RLDRAM II or DDR3 SDRAM memory device, and
21 Micron’s memory controllers capable of interfacing with and/or controlling any SDR-
22 SDRAM, Mobile-SDRAM or SDR-SGRAM, DDR SDRAM, Mobile-DDR-SDRAM, DDR
23 SGRAM (GDDR SDRAM), DDR2 SDRAM, GDDR2 SDRAM, gDDR2 SDRAM, GDDR3
24 SDRAM, RLDRAM II or DDR3 SDRAM memory device.
25 C. CLAIM CHARTS
26 Claim charts identifying the location of every element of every asserted claim of the
27
28
1 Rambus Patents within accused devices are attached hereto as Exhibits E - J.3 Note that the claim
2 charts include the asserted claims listed above as well as claims that are not themselves asserted,
3 but from which one or more asserted claims depend.
4 In order to avoid unnecessary repetition, the claim charts refer to the following datasheets
5 describing certain of the accused products:
6 • Hynix 512Mb (32Mx16) DDR2 SDRAM, HY5PS121621F, Rev. 0.1 Mar. 2004
7 (“HgDDR2”) (attached hereto as Exhibit K);
8 • Hynix 512Mb DDR2 SDRAM, HY5PS12421(L)F, HY5PS12821(L)F,
9 HY5PS121621(L)F, Rev. 1.2 Apr. 2005 (“HDDR2”) (attached hereto as Exhibit
10 L);
11 • Hynix DDR2 SDRAM Device Operation & Timing Diagram (“HDDR2DOT”)
12 (attached hereto as Exhibit M);
13 • Hynix 512M (16Mx32) GDDR3 SDRAM, HY5RS123235FP, Rev. 1.1 Jun. 2005
14 (‘HGDDR3”) (attached hereto as Exhibit N);
15 • Hynix 1Gb DDR3 SDRAM, Rev. 0.3, May 2007 (“Hynix DDR3 SDRAM”)
16 (attached hereto as Exhibit O);
17 • Hynix 512M (16Mx32) GDDR4 SDRAM, HY5FS123235AFCP, Rev. 1.2, June
18 2008 (“Hynix GDDR4 SGRAM”) (attached hereto as Exhibit P);
19
20 • Samsung 128 Mb F-die SDRAM Specification (Rev. 1.2/May 2004) (“SDRAM”)

21 (attached hereto as Exhibit Q);
22 • Samsung SDRAM Device Operations (“SDR_DO”) (attached hereto as Exhibit
23 R);
24 • Samsung SDRAM Timing Diagram (“SDR_TD”) (attached hereto as Exhibit S);
25
3
26 The parties have proposed or agreed that certain products will be considered representative of
the entire class of products to which they belong for infringement purposes. Any products that
27 are in fact representative of their product class would infringe the asserted patent claims for at
least the same or similar reasons that any other class member infringes as set out in the
28 accompanying claim charts.
1 • Samsung 32Mbit SGRAM, Revision 1.3, Dec. 2000 (“SGRAM”) (attached hereto
2 as Exhibit T);
3 • Samsung K4S511633F-Y(P)C/L/F Mobile-SDRAM, September 2004 (“Mobile-
4 SDRAM”) (attached hereto as Exhibit U);
5 • Samsung Mobile SDR SDRAM Device Operations & Timing Diagram
6 (“MSDR_DOT”) (attached hereto as Exhibit V);
7 • Samsung 512Mb C-die DDR SDRAM Specification (Rev. 1.1/Jun. 2005) (“DDR
8 SDRAM”) (attached hereto as Exhibit W);
9 • Samsung DDR SDRAM Device Operation & Timing Diagram (“DDR_DOT”)
10 (attached hereto as Exhibit X);
11 • Samsung K4X56163PE-L(F)G Mobile-DDR SDRAM (Mar. 2004) (“Mobile-
12 DDR”) (attached hereto as Exhibit Y);
13 • Samsung 256Mbit GDDR SDRAM, Revision 1.6, May 2005 (“GDDR SDRAM”)
14 (attached hereto as Exhibit Z);
15 • Samsung Device Operation & Timing Diagram, x32 DDR SDRAM
16 (“GDDR_DOT”) (attached hereto as Exhibit AA);
17 • Samsung 512Mb B-die DDR2 SDRAM Specification, Ver. 1.4 Feb. 2005
18 (“SDDR2”) (attached hereto as Exhibit AB);
19 • Samsung DDR2 SDRAM Device Operation & Timing Diagram (“SDDR2DOT”)
20 (attached hereto as Exhibit AC);
21 • Samsung 512MBit gDDR2 SDRAM, Rev. 1.3, Jun. 2005 (“SgDDR2”) (attached
22 hereto as Exhibit AD);
23 • Samsung 512Mbit GDDR3 SDRAM, Rev. 1.0, March 2005 (“SGDDR3”)
24 (attached hereto as Exhibit AE);
25 • Samsung 1Gb C-die DDR3 SDRAM Specification, Rev. 1.0, June 2007
26 (“Samsung DDR3 SDRAM C-die Spec” or “C-die Spec”) (attached hereto as
27 Exhibit AF);
28 • Samsung DDR3 SDRAM Specification, Rev. 0.2 July 2007(“Samsung DDR3
1 SDRAM”) (attached hereto as Exhibit AG);

2 • Samsung 512Mbit GDDR4 SGRAM, Rev. 1.2, May 2007 (“Samsung GDDR4
3 SGRAM”) (attached hereto as Exhibit AH);
4
5 • Nanya 256Mb Synchronous DRAM, Rev. 1.1, June 2007 (“Nanya SDRAM”)
6 (attached hereto as Exhibit AI);
7 • Nanya 512Mb DDR SDRAM, Rev. 1.5, June 2007 (“Nanya DDR SDRAM”)
8 (attached hereto as Exhibit AJ);
9 • Nanya 512Mb DDR2 SDRAM, NT5TU128M4AB/NT5TU128M4AE (Green),
10 NT5TU64M8AF/ NT5TU64M8AB/NT5TU64M8AE (Green), NT5TU32M16AF/
11 NT5TU32M16AG (Green), Rev. 1.4 July 2005 (“NDDR2”) (attached hereto as
12 Exhibit AK);
13 • Nanya 1Gb DDR3 SDRAM A-Die, Rev 1.0, Jun. 2008 (“Nanya DDR3 SDRAM”)
14 (attached hereto as Exhibit AL);
15
16 • Micron DDR2 SDRAM, MT47H64M4 – 16 Meg x 4 x 4 banks, MT47H32M8 – 8

17 Meg x 8 x 4 banks, MT47H16M16 – 4 Meg x 16 x 4 banks, Rev. J 11/05 EN
18 (“DDR2 SDRAM”) (attached hereto as Exhibit AM);
19 • Micron 1Gb DDR3 SDRAM, Rev. B, Mar. 2007 (“Micron DDR3 SDRAM”)
20 (attached hereto as Exhibit AN);
21 • Micron Graphics DDR3 SDRAM, MT44H8M32 – 2 MEG x 32 x 4 BANKS,
22 Rev. A 6/03 EN (“GDDR3 SDRAM”) (attached hereto as Exhibit AO); and
23 • Micron 288Mb CIO Reduced Latency (RLDRAM II), MT49H8M36,
24 MT49H16M18, MT49H32M9, Rev. H 8/05 EN (“RLDRAM II”) (attached hereto
25 as Exhibit AP).
26 Rambus reserves the right to amend its claim charts, as well as other information
27 contained in this document and the exhibits attached hereto: to incorporate new information
28 learned during the course of discovery; pursuant to the Court’s Orders; pursuant to Patent Local
1 Rule 3-6; and/or as otherwise appropriate.

2 D. LITERAL INFRINGEMENT AND DOCTRINE OF EQUIVALENTS
3 Rambus asserts that, under the Court’s and any appropriate construction of the asserted
4 claims and their claim terms, every limitation of the asserted claims of the Rambus Patents is
5 literally present in the Defendants’ devices accused of infringing the claim, as set forth in the
6 claim charts attached hereto. To the extent that any limitation is found to be not literally present,
7 Rambus asserts that such limitation is present under the doctrine of equivalents.
8 Rambus hereby incorporates by reference, as if fully set forth herein, portions of its prior
9 filings in this action regarding the doctrine of equivalents to the extent applicable in light of the
10 Court’s and any appropriate claim construction. See, e.g., Rambus’s 11/02/2007 Opposition to
11 Manufacturers’ Joint Motion for Summary Judgment (Farmwald/Horowitz), p. 23; Rambus’s
12 11/02/2007 Opposition to Manufacturers’ Joint Motion for Summary Judgment (Ware), pp. 17,
13 22-23; 11/02/2007 Declaration of Robert J. Murphy in Support of Rambus’s Opposition to
14 Manufacturers’ Joint Motion for Summary Judgment (Ware & Farmwald/Horowitz), ¶¶ 137-156,
15 162-165, 171-175.
16 Moreover, Rambus reserves the right to amend its infringement contentions to further
17 assert infringement under the doctrine of equivalents in light of the Courts’ claim constructions.
18 E. PRIORITY DATES
19 Each of the asserted claims of the ’789 and ’897 Patents is entitled to at least the priority
20 date of provisional U.S. Patent Application No. 08/545,294, filed October 19, 1995.
21 Each of the asserted claims of the ’184, ’285, ’051, ’6,446, ’037, ’295, ’5,020 and ’696
22 Patents is entitled to at least the priority date of U.S. Patent Application No. 07/510,898, filed on
23 April 18, 1990.
24 Each of the asserted claims of the ’195, ’120, ’8,020, ’916 and ’863 Patents is entitled to
25 at least the priority date of U.S. Patent Application No. 07/510,898, filed on April 18, 1990. The
26 subject matter described by the asserted claims was conceived at least as early as mid-1988 and
27 reduced to practice during 1989 and early 1990.
28
Final Infringement Contentions Pursuant to - 10 - Case No. C 05-002298 RMW
1 F. RAMBUS’S OWN PRODUCTS

2 This provision is inapplicable because Rambus does not manufacture any products that
3 practice the claimed inventions. However, Rambus designs, develops, markets and licenses high
4 speed interface technology. Rambus has become a key player in the semiconductor industry by
5 designing and developing innovative, cost-efficient technology for increasing the data transfer
6 rate between integrated circuits – for example, between memory devices and memory sub-
7 systems presently used in personal computers, communications networking equipment, digital
8 television appliances, and home video games systems.
9 Over the past decade, Rambus has developed advanced memory designs and memory
10 system architectures that practice certain of the claimed inventions and that have revolutionized
11 the way in which electronic systems access and store data. These include (1) Rambus’s XDR
12 DRAM, which provides unprecedented ability to span performance and memory capacity
13 requirements across a range of computing, consumer, and networking applications, including, for
14 example, Sony Corporation’s PlayStation 3, and (2) Rambus’s previous generation memory,
15 Direct RDRAM, which is used in personal computers, digital televisions, and Sony’s PlayStation
16 2. Prior generations of RDRAM also incorporated certain of the inventions of the asserted
17 claims.
18 Rambus licenses its patents, including the patents in suit, to various manufacturers of
19 synchronous memory devices, and others.
20
21
DATED: August 1, 2008
22
By: /s/ Pierre J. Hubert
23 Pierre J. Hubert
24 Attorneys for Plaintiff
RAMBUS INC.
25
26
27
28
Final Infringement Contentions Pursuant to - 11 - Case No. C 05-002298 RMW

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Case 5:05-cv-00334-RMW Document 2056-4 Filed 08/14/2008 Page 1 of 13

14 UNITED STATES DISTRICT COURT

1 RAMBUS INC., ) Case No. C 05-002298 RMW

1 In addition, Rambus asserts the following claims against Samsung’s SDR-SDRAM

20 • Samsung 128 Mb F-die SDRAM Specification (Rev. 1.2/May 2004) (“SDRAM”)

1 SDRAM”) (attached hereto as Exhibit AG);

16 • Micron DDR2 SDRAM, MT47H64M4 – 16 Meg x 4 x 4 banks, MT47H32M8 – 8

1 Rule 3-6; and/or as otherwise appropriate.

1 F. RAMBUS’S OWN PRODUCTS

7 systems presently used in personal computers, communications networking equipment, digital

8 television appliances, and home video games systems.

19 synchronous memory devices, and others.

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