KA3S0680RF SAMSUNG POWER SWITCH

FEATURES
TO-3PF
- Wide operating frequency range up to 150KHz
- Pulse by pulse over current limiting
- Over load protection
- Over voltage protection (min:23V)
- Internal thermal shutdown function
- Under voltage lockout
- Internal high voltage sense FET
- External sync terminal
- Auto Restart
PRODUCT SUMMARY 1. DRAIN 2.GND 3.Vcc 4.FB 5. Sync

Part Number BVdss Rds(on) ID

KA3S0680RF 800V 2ã 6A

BLOCK DIAGRAM

Vcc
32V DRAIN
5V INTERNAL
Vref BIAS SFET
LOGIC
GOOD

Sync _
OSC
+
5V S
6.4V Q
R
FB _
2.5R L.E.B
+
1 mA R
2 uA
9V 0.1V

+ GND
_ S
7.5V
Q
R
+ THERMAL S/D
_ POWER ON RESET
25V
OVER VOLTAGE S/D
KA3S0680R SAMSUNG POWER SWITCH
ABSOLUTE MAXIMUM RATINGS

Characteristic Symbol Value Unit

Drain - Source(GND) Voltage (1) VDSS 800 V
Drain - Gate Voltage (RGS =1M7) VDGR 800 V
Gate - Source(GND) Voltage VGS » 30 V
Drain Current Pulsed (2) IDM 24.0 ADC
Single Pulsed Avalanche Energy (3) EAS 455 mJ
Avalanche Current IAS - A
Continuous Drain Current (Tc = 25 Š) ID 6.0 ADC
Continuous Drain Current (Tc = 100Š) ID 4.0 ADC
Supply Voltage VCC 30 V
Analog Input Voltage Range VFB -0.3 ~ VSD V
PD ( wt H/S) 150 W
Total Power Dissipation
Derating 1.21 W/Š
Operating Temperature TOPR - 25 ~ + 85 Š
Storage Temperature TSTG - 55 ~ + 150 Š
Š
Notes: (1) TJ = 25 to 150 Š
Š
(2) Repetitive rating : Pulse width limited by maximum junction temperature
(3) L = 24mH, VDD =50V, RG = 257, starting Tj = 25

ELECTRICAL CHARACTERISTICS ( SFET part )

( Ta = 25Š unless otherwise specified )
Symbol Characteristic Min Typ Max Units Test Conditions

Drain-Source Breakdown
BVDSS 800 - - V VGS=0V, ID=50uA
Voltage
- - 50 uA VDS=Max, Rating,VGS=0V
IDSS Zero Gate Voltage Drain

Š
Current uA VDS=0.8Max,Rating,VGS=0V
- - 200
TC=125
RDS(on) Static Drain-Source On
Resistance(4)
- 1.6 2.0 7 VGS = 10V, ID = 4.0A
KA3S0680RF SAMSUNG POWER SWITCH

ELECTRICAL CHARACTERISTICS ( SFET part continued)

( Ta = 25 Š unless otherwise specified )
Symbol Characteristic Min Typ Max Units Test Conditions

gfs Forward Transconductance(4) 1.5 2.5 - mho VDS=15V, ID=4.0A

Ciss Input Capacitance - 1600 -

VGS = 0V, VDS = 25V,

Coss Output Capacitance - 140 - pF
f = 1MHz
Crss Reverse Transfer Capacitance - 42 -

td(on) Turn On Delay Time - 60 -

VDD = 0.5BVDSS , ID = 6.0A

tr Rise Time - 150 -
(MOSFET switching time
nS are essenstialy independent
td(off) Turn Off Delay Time - 300 -
of operating temperature )
tf Fall Time - 130 -

Total Gate Charge - 70 - VGS = 10V, ID = 6.0A

Qg ( Gate-Source + Gate-Drain ) VDS = 0.5BVDSS
(MOSFET switching time
Qgs Gate-Source Charge - 16 - nC
are essenstialy independent
of operating temperature )
Qgd Gate-Drain(Miller) Charge - 27 -

Š
Notes: (1) TJ = 25 to 150 Š
Š
(2) Repetitive rating : Pulse width limited by maximum junction temperature
(3) L = 24mH, VDD =50V, RG = 257, starting Tj = 25
(4) Pulse Test : Pulse width þ 300uS, Duty Cycle þ 2 %
KA3S0680RF SAMSUNG POWER SWITCH

ELECTRICAL CHARACTERISTICS ( Control part )

( Ta = 25 Š unless otherwise specified )
Symbol Characteristics Min Typ Max Unit Test Conditions

REFERENCE SECTION
Vref Output Voltage (Note 1) 4.80 5.00 5.20 V Ta = 25 Š
Vref / #T Temperature Stability (Note 1&2) - 0.3 0.6 mV/ Š -25ŠþTa þ+85Š
OSCILLATOR SECTION
FOSC Initial Accuracy 18 20 22 KHz Ta = 25Š
# F / #T
Frequency Change with
Temperature (Note 2)
»5 »10 % -25ŠþTa þ+85Š
VSYTH Sync Threshold Voltage 6.0 6.4 6.8 V Vfb =5 V

DMAX Maximum Duty Cycle 92 95 98 %

FEEDBACK SECTION

I FB Feedback Source Current 0.7 0.9 1.1 mA

Š
Ta = 25 ,
Vfb = GND
Ta = 25Š,
5 VþVfbþVSD
Idelay Shutdown Delay Current 1.4 1.8 2.2 uA

OVER CURRENT PROTECTION SECTION

IL(MAX) Over Current Protection 3.52 4.00 4.48 A Max. Inductor Current
UVLO SECTION
Vth(H) Start Threshold Voltage 14 15 16 V
Vth(L) Minimum Operating Voltage 9 10 11 V After turn on
KA3S0680RF SAMSUNG POWER SWITCH

ELECTRICAL CHARACTERISTICS ( Continued)

( Ta = 25 Š unless otherwise specified )
Symbol Characteristics Min Typ Max Unit Test Conditions

TOTAL STANDBY CURRENT SECTION

IST Start up Current 0.1 0.3 0.55 mA VCC = 14V

IOPR
Operating Supply Current
( control part only )
6 12 18 mA Ta = 25 Š,
VZ Vcc Zener Voltage 30 32.5 35 V ICC = 20mA
SHUTDOWN SECTION
VSD Shutdown Feedback Voltage 6.9 7.5 8.1 V
T SD ThermalShutdownTemperature(Tj) 140 160 - Š (Note 1)
Vovp Over Voltage Protection 23 25 28

SOFT START SECTION

I SS Soft Start Current 0.8 1.0 1.2 mA Sync&S/S = GND
V SS Soft Start Voltage 4.7 5.0 5.3 V VFB= 2V

Notes: (1) These parameters, although guaranteed,are not 100% tested in production
(2) These parameters, although guaranteed, are tested in EDS(wafer test) process.
KA3S0680RF SAMSUNG POWER SWITCH

TYPICAL PERFORMANCE CHARACTERISTICS

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KA3S0680RF SAMSUNG POWER SWITCH

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

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