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EXERCICES

EXERCICE 1 : On utilise une diode du type RURG5060 (600V/50A) du fabricant Fairchild dont la
caractéristique directe est indiquée ci-dessous. Après avoir approximée cette caractéristique par une
droite pour 25°C,
a) Trouvez la tension à ses bornes
lorsqu’elle est traversée par un courant de 40A
d’un rapport cyclique de 2/3
b) Trouvez le courant efficace qui la traverse
c) Trouver ses pertes moyennes

Réponse:

a) La caractéristique est approximée par


VF=0,027IF+0,67
La tension diode est alors: VF=0,027x40+0,67=1,75V

b) Le courant efficace est , avec


2
Idc  IMAX  x40  26, 7A
3
2
Irms  IMAX
2
  402 x  32, 7A
3

c) Pertes moyennes

2
P  .VF .IF  x1, 75x 40  46, 7W
3
. AJOUTER CETTE QUESTION EN UTILISANT LE DATASHEET DE LA DIODE :

Cette diode est placée dans un montage excité par une tension carrée de fréquence 100kHz et de
rapport cyclique 2/3 (comme précédemment).

(Le schéma ressemblerait à celui-ci :

On va garder les résultats précédemment, la diode étant


traversée par un courant de 40A (quand elle conduit)

Quelles sont ses pertes par commutation ?


RURG5060

Data Sheet November 2013

50 A, 600 V, Ultrafast Diode Features


• Ultrafast Recovery trr = 75 ns (@ IF = 50 A)
• Max Forward Voltage, VF = 1.6 V (@ TC = 25°C)

Description • 600 V Reverse Voltage and High Reliability

The RURG5060 is an ultrafast diode with low forward • Avalanche Energy Rated
voltage drop. This device is intended for use as • RoHS Compliant
freewheeling and clamping diodes in a variety of
switching power supplies and other power switching Applications
applications. It is specially suited for use in switching
power supplies and industrial application. • Switching Power Supplies
• Power Switching Circuits
• General Purpose

Ordering Information Packaging


PART NUMBER PACKAGE BRAND JEDEC STYLE 2 LEAD TO-247

RURG5060 TO-247-2L RURG5060


ANODE
NOTE: When ordering, use the entire part number. CATHODE
CATHODE
(BOTTOM
SIDE METAL)
Symbol
K

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified


RURG5060 UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 50 A
(TC = 102oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM 100 A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM 500 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 40 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC

©2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


RURG5060 Rev. C1
RURG5060

Electrical Specifications TC = 25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNIT

VF IF = 50 A - - 1.6 V

IF = 50 A, TC = 150oC - - 1.4 V

IR VR = 600 V - - 250 µA

VR = 600 V, TC = 150oC - - 1.5 mA

trr IF = 1 A, dIF/dt = 100 A/µs - - 65 ns

IF = 50 A, dIF/dt = 100 A/µs - - 75 ns

ta IF = 50 A, dIF/dt = 100 A/µs - 30 - ns

tb IF = 50 A, dIF/dt = 100 A/µs - 20 - ns

RθJC - - 1 oC/W

DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
Trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.

Typical Performance Curves

300 1000

175oC
IR, REVERSE CURRENT (µA)

100
IF , FORWARD CURRENT (A)

100

10 100oC

175oC
10 1.0
100oC
25oC
0.1
25oC

1 0.01
0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600
VR , REVERSE VOLTAGE (V)
VF , FORWARD VOLTAGE (V)

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE

©2001 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com


RURG5060 Rev. C1
RURG5060

Typical Performance Curves (Continued)

60

IF(AV), AVERAGE FORWARD CURRENT (A)


60

50
50 trr
DC
40
40
SQ. WAVE
t, TIME (ns)

ta 30
30

tb 20
20

10
10

0
0 60 80 100 120 140 160 180
1 10 60
TC, CASE TEMPERATURE (oC)
IF , FORWARD CURRENT (A)

FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE

Test Circuits and Waveforms


VGE AMPLITUDE AND
RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF

DUT CURRENT dIF trr


RG SENSE IF
+ dt ta tb
VGE VDD 0
t1 IGBT -
0.25 IRM
t2
IRM

FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS

I = 1.4A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
VAVL
Q1 = IGBT (BVCES > DUT VR(AVL))
L R

CURRENT +
VDD IL IL
SENSE
Q1 I V
VDD
DUT -
t0 t1 t2 t

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS

©2001 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com


RURG5060 Rev. C1
RURG5060 — Ultrafast Diode
Mechanical Dimensions

TO247-2L

Figure 9. TO-247,Molded, 2LD, Jedec Option AB


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002.

©2001 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com


RURG5060 Rev. C1
RURG5060 — Ultrafast Diode
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ®
®*
®
BitSiC™ Global Power ResourceSM PowerTrench
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
MicroFET™ SMART START™
® SerDes™
MicroPak™ Solutions for Your Success™
Fairchild® MicroPak2™ SPM®
Fairchild Semiconductor ® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
® mWSaver ®
SuperSOT™-3 Ultra FRFET™
FACT
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC ® SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR ®
SupreMOS ® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY


FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later


Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to


No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild


Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2001 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com


RURG5060 Rev. C1
SiC
Silicon Carbide Diode

5 t h Generation thinQ! T M
650V SiC Schottky Diode

IDW40G65C5

Final Datasheet
Rev. 2.2, 2013-01-15

Power Management & Multimarket


5th Generation thinQ!™ SiC Schottky Diode IDW40G65C5

1 Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. Thanks to the more compact design and thin-wafer
technology, the new family of products shows improved efficiency over all load
conditions, resulting from both the improved thermal characteristics and a lower
figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application 1
requirements in this voltage range. 2
3
Features
 Revolutionary semiconductor material - Silicon Carbide 1
 Benchmark switching behavior
 No reverse recovery/ No forward recovery 2 CASE
 Temperature independent switching behavior
3
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC1) for target applications
 Breakdown voltage tested at 88 mA2)
 Optimized for high temperature operation
Benefits
 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliability due to lower operating temperatures
 Reduced EMI
Applications
 Switch mode power supply
 Power factor correction
 Solar inverter
 Uninterruptible power supply

Table 1 Key Performance Parameters


Parameter Value Unit
VDC 650 V
QC; VR=400V 55 nC
EC; VR=400V 12.8 µJ
IF @ TC < 110°C 40 A

Table 2 Pin Definition


Pin 1 Pin 2 Pin 3
n.c. C A

Type / ordering Code Package Marking Related links


IDW40G65C5 PG-TO247-3 D4065C5 www.infineon.com/sic

1) J-STD20 and JESD22


2) All devices tested under avalanche conditions for a time periode of 10ms

Final Data Sheet 2 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

Table of contents

Table of Contents
1  Description.......................................................................................................................................... 2 
2  Maximum ratings ................................................................................................................................ 4 
3  Thermal characteristics ..................................................................................................................... 4 
4  Electrical characteristics ................................................................................................................... 5 
5  Electrical characteristics diagrams .................................................................................................. 6 
6  Simplified Forward Characteristics Model ...................................................................................... 8 
7  Package outlines ................................................................................................................................ 9 
8  Revision History ............................................................................................................................... 10 

Final Data Sheet 3 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

Maximum ratings

2 Maximum ratings

Table 3 Maximum ratings


Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Continuous forward current IF – – 40 TC < 110°C, D=1
Surge non-repetitive forward current, – – 182 TC = 25°C, tp=10 ms
sine halfwave IF,SM A
– – 153 TC = 150°C, tp=10 ms
Non-repetitive peak forward current IF,max – – 1432 TC = 25°C, tp=10 µs
i²t value ∫ i²dt – – 166 A²s TC = 25°C, tp=10 ms
– – 118 TC = 150°C, tp=10 ms
Repetitive peak reverse voltage VRRM – – 650 V
Diode dv/dt ruggedness dv/dt – – 100 V/ns VR=0..480 V
Power dissipation Ptot – – 183 W TC = 25°C
Operating and storage temperature Tj;Tstg -55 – 175 °C
Mounting torque – 50 70 Ncm M3 and M4 screws

3 Thermal characteristics

Table 4 Thermal characteristics TO-247-3


Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Thermal resistance, junction-case RthJC – 0.6 0.8
Thermal resistance, junction- RthJA K/W leaded
ambient – – 62

Soldering temperature, Tsold 1.6mm (0.063 in.) from


– – 260 °C
wavesoldering only allowed at leads case for 10 s

Final Data Sheet 4 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

Electrical characteristics

4 Electrical characteristics

Table 5 Static characteristics


Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
DC blocking voltage VDC 650 – – IR= 0.22 mA, Tj = 25°C
Diode forward voltage VF – 1.5 1.7 V IF= 40 A, Tj=25°C
– 1.8 2.1 IF= 40 A, Tj=150°C
Reverse current IR – 2.2 220 VR=650 V, Tj=25°C
– 0.5 150 µA VR=600 V, Tj=25°C
– 8.2 1500 VR=650 V, Tj=150°C

Table 6 AC characteristics
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Total capacitive charge Qc VR=400 V, di/dt=200A/µs,
– 55 nC
IF≤IF,MAX, Tj=150°C.
Total Capacitance C – 1140 – VR=1 V, f=1 MHz
– 147 – pF VR=300 V, f=1 MHz
– 145 – VR=600 V, f=1 MHz

Final Data Sheet 5 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

5 Electrical characteristics diagrams


Table 7
Power dissipation Diode forward current

200 250 0.1

180 0.3
0.5
160 200 0.7

140 1

120 150
Ptot[W]

IF[A]
100

80 100

60

40 50

20

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175

TC[°C] TC[°C]

Ptot=f(TC); RthJC,max IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle

Table 8
Typical forward characteristics Typical forward characteristics in surge current

80 400

70 -55°C 350

25°C
60 300

100°C
50 250
-55°C
IF [A]

IF [A]

40 200 25°C

30 150
100°C
150°C
20 100
175°C 150°C

10 50
175°C

0 0
0 1 2 3 0 1 2 3 4 5 6
VF [V] VF [V]

IF=f(VF); tp=200 µs; parameter: Tj IF=f(VF); tp=200 µs; parameter: Tj

Final Data Sheet 6 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

Table 9
Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage

1.E-4
60

50 1.E-5

40
1.E-6
QC[nC]

175°C

IR [A]
30
1.E-7
150°C
20

100°C
1.E-8
10 -55°C
25°C

0 1.E-9
100 300 500 700 900 100 200 300 400 500 600

dIF/dt [A/µs] VR [V]

QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj


1) Only capacitive charge, guaranteed by design.

Table 10
Max. transient thermal impedance Typ. capacitance vs. reverse voltage

1 1600

1400

1200

1000
0.5
Zth,jc [K/W]

0.1 0.2 800


C [pF]

0.1
0.05 600
0.02
0.01 400
single pulse
200

0.01 0
1.E-06 1.E-03 1.E+00 0 1 10 100 1000
tp [s] VR [V]

Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz

Final Data Sheet 7 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

Table 11
Typ. capacitance stored energy

35

30

25

20
EC [µJ]

15

10

0
0 200 400 600
VR [V]

EC=f(VR)

6 Simplified Forward Characteristics Model


Table 12
Equivalent forward current curve Mathematical Equation

V F  VTH  RDIFF  I F

VTH T j   0.001 T j  1.04 V 


RDIFF T j   3.2 10-7  T j  3.2 10-5  T j  0.012 
2
IF [A]

1/R
diff
V
th

VF [V]

VF=f(IF) Tj in °C; -55°C < Tj < 175°C; IF < 80 A

Final Data Sheet 8 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

7 Package outlines

Figure 1 Outlines TO-247, dimensions in mm/inches

Final Data Sheet 9 Rev. 2.2, 2013-01-15


5th Generation thinQ!TM SiC Schottky Diode
IDW40G65C5

Revision History

8 Revision History

5th Generation thinQ!TM SiC Schottky Diode

Revision History: 2013-01-15, Rev. 2.2


Previous Revision:
Revision Subjects (major changes since last version)
2.0 Release of the final datasheet.
2.1 Reverse current values, maximum diode forward voltage.
2.2 Reverse current values, tested avalanche current, simplified calculation model

We Listen to Your Comments


Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2013-01-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.

Final Data Sheet 10 Rev. 2.2, 2013-01-15


w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

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